Combined silicon carbide diffusion furnace tube
By designing a uniform intake component in the diffusion furnace tube, including the air -storage cavity and circular pitch distribution, it solves the problem that the craft gas is difficult to spread to the surface of the silicon wafer surface in the thermal diffusion process, and realize the process gas of the process gas. The quality of uniform air intake and silicon wafers is increased, while the quartz boat capacity inside the furnace tube is increased.
Patent Information
- Application Number
- CN202421141057.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-23
- Publication Date
- 2025-01-28
- Estimated Expiration
- 2034-05-23
AI Technical Summary
In the heat diffusion process, it is difficult for existing diffusion furnace pipes to diffuse the process gas evenly to the surface of the silicon wafer, affecting the quality of the silicon wafer, and the ventilation pipes inside the furnace pipe occupy space and reduce the usable area.
Design a combination of silicon carbide diffusion furnace tube, which uses uniform intake components, including air storage cavity, air pipe pipe, and circular pitch distribution. Realize the uniform emissions of process gases.
The uniform air intake of the process gas is achieved, the gas diffusion uniformity of the silicon wafer surface is increased, the capacity of the quartz boat inside the furnace tube is increased, and the number of heated silicon wafers that can be heated at one time can be increased.
Smart Images

Figure CN222411996U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of diffusion furnace tubes, in particular to a combined silicon carbide diffusion furnace tube. Background Art
[0002] The diffusion furnace is one of the important process equipment in the front process of the semiconductor production line. It is used for diffusion, oxidation, annealing, alloying and sintering in industries such as large-scale integrated circuits, discrete devices, power electronics, optoelectronic devices and optical fibers. When the diffusion furnace is working, the low-pressure diffusion furnace tube needs to be subjected to a thermal diffusion process, that is, in a low-pressure thermal environment, the phosphorus or boron element is diffused into the interior and surface of the silicon wafer. During the diffusion process, how to make the process gas diffuse evenly to the surface of the silicon wafer is a major problem. Therefore, we propose a combined silicon carbide diffusion furnace tube.
[0003] The existing patent (publication number: CN217351624U) discloses a diffusion furnace tube and a diffusion furnace, which relates to the technical field of crystalline silicon solar cell production. The diffusion furnace tube includes a tube body, an air inlet pipe and at least two annular diverter pipes. The tube body includes a furnace mouth and a furnace tail. The furnace tail has an air outlet for discharging the waste gas in the tube body. The air inlet pipe extends into the tube body through the tail of the tube body along the axial direction of the tube body and is connected with each annular diverter pipe. At least two annular diverter pipes are located at the furnace mouth of the tube body and are spaced apart along the axial direction of the tube body. The side of the annular diverter pipe facing the furnace tail has multiple diverter holes, and the multiple diverter holes are spaced apart in annular shapes. The process gas enters the annular diverter pipe from the air inlet pipe and flows out from the diverter holes. The prior art has the following problems: when a diffusion furnace tube is subjected to a thermal diffusion process, process gas is ejected from one end of the furnace tube, and then spreads to other spaces in the furnace tube, eventually filling the furnace tube, and the process gas cannot be diffused to the surface of each silicon wafer at the same time and evenly, affecting the quality of the final product silicon wafer. In addition, in the existing diffusion furnace tube, a ventilation pipeline is arranged inside the furnace tube, resulting in the space inside the furnace tube being occupied and the usable area being reduced. Utility Model Content
[0004] The purpose of the utility model is to provide a combined silicon carbide diffusion furnace tube to solve the problems raised in the above background technology.
[0005] To achieve the above-mentioned purpose, the utility model provides the following technical solutions: a combined silicon carbide diffusion furnace tube, comprising a furnace tube body, the inner wall of which is provided with a uniform air intake assembly, the end of which is plugged into the middle of a tube cap, the inner wall of which is fixedly connected with two guide bars, a quartz boat being slidably connected between the two guide bars.
[0006] Preferably, the uniform air intake assembly includes an air storage cavity opened in the middle of the inner wall of the furnace tube body, the top of the air storage cavity is connected to the two air intake pipes, and a plurality of groups of air intake holes are opened on one side of the air storage cavity close to the center of the furnace tube body.
[0007] Preferably, the plurality of groups of air inlet holes are equidistantly distributed, and the air inlet holes in each group are arranged in a ring shape on the inner wall surface of the furnace tube body.
[0008] Preferably, a through window is provided in the middle of the pipe cap, two electric push rods are fixedly connected to the inner bottom of the pipe cap, and a sealing ring is fixedly connected between the output ends of the two electric push rods.
[0009] Preferably, there are several sealing rings, and two connecting rods are fixedly connected between two adjacent sealing rings. Several sealing rings correspond to several groups of air inlet holes one by one, and the sealing rings are sleeved on the outside of the air inlet holes.
[0010] Preferably, a plurality of groups of limiting plates are fixedly connected to one inner side of the quartz boat, the groups of limiting plates are equidistantly distributed, and a silicon wafer is placed in the middle of each group of limiting plates.
[0011] Preferably, protrusions are provided on both sides of the quartz boat, and the protrusions are slidably connected in a sliding groove on one side of the guide bar.
[0012] Compared with the prior art, the beneficial effects of the utility model are:
[0013] The combined silicon carbide diffusion furnace tube proposed by the utility model first connects the air inlet pipe with the external pipe, and then the process gas is introduced into the air storage chamber. After the process gas fills the air storage chamber, the electric push rod is started to drive the bottom sealing ring to move upward. At this time, the sealing rings are connected by connecting rods, so all the sealing rings move upward synchronously to release the seal of the air inlet holes. At this time, the process gas will enter the interior of the furnace tube body from the air inlet holes. Since the several groups of air inlet holes are equidistantly distributed in a ring shape, the process gas can be discharged onto the silicon wafers at the same time, so as to achieve the purpose of uniform air intake. By arranging the air storage chamber in the inner wall of the furnace tube body, and arranging the electric push rod below the plane of the inner bottom surface of the tube cap, and at the same time, the sealing ring and the connecting rod are both arranged in the air storage chamber, it is avoided to occupy the internal space of the furnace tube body, so that a larger quartz boat can be placed in the furnace tube body, and the number of silicon wafers that can be heated at one time is increased. BRIEF DESCRIPTION OF THE DRAWINGS
[0014] Figure 1 This is a schematic diagram of the main three-dimensional structure of the utility model;
[0015] Figure 2 It is a schematic diagram of the three-dimensional structure of the side section of the utility model;
[0016] Figure 3This is a schematic diagram of the three-dimensional structure of the utility model in front view;
[0017] Figure 4 For this utility model Figure 3 A in the figure is an enlarged schematic diagram of the three-dimensional structure;
[0018] Figure 5 It is a schematic diagram of the three-dimensional structure of the utility model when viewed from above.
[0019] In the figure: 1. furnace tube body; 2. uniform air intake assembly; 201. air storage chamber; 202. air intake pipe; 203. air intake hole; 3. pipe cap; 301. through window; 302. electric push rod; 303. sealing ring; 304. connecting rod; 4. guide strip; 5. quartz boat; 501. limit plate; 502. silicon wafer; 503. bump. DETAILED DESCRIPTION
[0020] In order to make the purpose and technical solution of the utility model clearly and completely described, and the advantages more clearly understood, the embodiments of the utility model are further described in detail in conjunction with the accompanying drawings. It should be understood that the specific embodiments described here are part of the embodiments of the utility model, not all of the embodiments, and are only used to explain the embodiments of the utility model, and are not used to limit the embodiments of the utility model. All other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model. Embodiment 1
[0021] See also Figures 1 to 5The utility model provides a technical solution: a combined silicon carbide diffusion furnace tube, comprising a furnace tube body 1, the inner wall of the furnace tube body 1 is provided with a uniform air intake assembly 2, the end of the furnace tube body 1 is plugged into the middle of a tube cap 3, the inner wall of the furnace tube body 1 is fixedly connected with two guide bars 4, a quartz boat 5 is slidably connected between the two guide bars 4, the uniform air intake assembly 2 comprises an air storage chamber 201 opened in the middle of the inner wall of the furnace tube body 1, the top of the air storage chamber 201 is connected with two air intake pipes 202, a side of the air storage chamber 201 close to the center of the furnace tube body 1 is provided with a plurality of groups of air intake holes 203, the plurality of groups of air intake holes 203 are equidistantly distributed, and the air intake holes 203 in each group are arranged in a ring shape on the furnace tube body. The inner wall surface of the body 1; when the process gas needs to be passed into the interior of the diffusion furnace tube, the air inlet pipe 202 needs to be connected to the external pipe first, and then the process gas will be passed into the gas storage chamber 201. After the process gas fills the gas storage chamber 201, the electric push rod 302 is started to drive the bottom sealing ring 303 to move up. At this time, the sealing rings 303 are connected by the connecting rod 304, so all the sealing rings 303 move up synchronously to release the seal of the air inlet hole 203. At this time, the process gas will enter the interior of the furnace tube body 1 from the air inlet hole 203. Since several groups of air inlet holes 203 are equidistantly distributed in a ring shape, the process gas can be discharged onto the silicon wafer 502 at the same time, so as to achieve the purpose of uniform air intake. Embodiment 2
[0022] On the basis of the first embodiment, in order to achieve the purpose of reducing the internal space occupied by the furnace tube body 1, a through window 301 is provided in the middle of the tube cap 3, two electric push rods 302 are fixedly connected to the inner bottom of the tube cap 3, and a sealing ring 303 is fixedly connected between the output ends of the two electric push rods 302. The number of sealing rings 303 is several, and two connecting rods 304 are fixedly connected between two adjacent sealing rings 303. Several sealing rings 303 correspond to several groups of air inlet holes 203 one by one, and the sealing rings 303 are sleeved on the outer side of the air inlet holes 203. Several groups of limit plates 5 are fixedly connected to one side of the inner side of the quartz boat 5. 01, several groups of limit plates 501 are equidistantly distributed, and a silicon wafer 502 is placed in the middle of each group of limit plates 501, and bumps 503 are provided on both sides of the quartz boat 5, and the bumps 503 are slidably connected in the slide groove on one side of the guide bar 4; by setting the gas storage chamber 201 in the inner wall of the furnace tube body 1, and setting the electric push rod 302 below the plane of the inner bottom surface of the tube cap 3, and at the same time, the sealing ring 303 and the connecting rod 304 are both set in the gas storage chamber 201, it is avoided to occupy the internal space of the furnace tube body 1, so that a larger quartz boat 5 can be placed in the furnace tube body 1, and the number of silicon wafers 502 that can be heated at one time is increased.
[0023] In actual use, first align the bumps 503 on both sides of the quartz boat 5 with the guide strip 4 and insert them, then connect the air inlet pipe 202 with the external pipe, and then the process gas will be introduced into the gas storage chamber 201. After the process gas fills the gas storage chamber 201, start the electric push rod 302 to drive the bottom sealing ring 303 to move up. At this time, the sealing rings 303 are connected by the connecting rod 304, so all the sealing rings 303 move up synchronously to release the seal of the air inlet hole 203. At this time, the process gas will enter the furnace tube body 1 from the air inlet hole 203. Internally, since several groups of air inlet holes 203 are equidistantly distributed in a ring shape, the process gas can be discharged onto the silicon wafer 502 at the same time, so as to achieve the purpose of uniform air intake. By setting the air storage chamber 201 in the inner wall of the furnace tube body 1, and setting the electric push rod 302 below the plane of the inner bottom surface of the pipe cap 3, and the sealing ring 303 and the connecting rod 304 are both set in the air storage chamber 201, it is avoided to occupy the internal space of the furnace tube body 1, so that a larger quartz boat 5 can be placed in the furnace tube body 1, and the number of silicon wafers 502 that can be heated at one time is increased.
[0024] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.
Claims
1. A combined silicon carbide diffusion furnace tube, comprising a furnace tube body (1), characterized in that: The inner wall of the furnace tube body (1) is provided with a uniform air intake assembly (2), the end of the furnace tube body (1) is plugged into the middle of a tube cap (3), the inner wall of the furnace tube body (1) is fixedly connected to two guide bars (4), and a quartz boat (5) is slidably connected between the two guide bars (4).
2. The combined silicon carbide diffusion furnace tube according to claim 1, characterized in that: The uniform air intake assembly (2) comprises an air storage cavity (201) disposed in the middle of the inner wall of the furnace tube body (1); the top of the air storage cavity (201) is connected to two air intake pipes (202); and a plurality of groups of air intake holes (203) are disposed on one side of the air storage cavity (201) close to the center of the furnace tube body (1).
3. The combined silicon carbide diffusion furnace tube according to claim 2, characterized in that: The plurality of groups of air inlet holes (203) are distributed at equal intervals, and the air inlet holes (203) in each group are arranged in a ring shape on the inner wall surface of the furnace tube body (1).
4. The combined silicon carbide diffusion furnace tube according to claim 1, characterized in that: A through window (301) is provided in the middle of the tube cap (3), two electric push rods (302) are fixedly connected to the inner bottom of the tube cap (3), and a sealing ring (303) is fixedly connected between the output ends of the two electric push rods (302).
5. The combined silicon carbide diffusion furnace tube according to claim 4, characterized in that: There are a plurality of sealing rings (303), and two connecting rods (304) are fixedly connected between two adjacent sealing rings (303). The plurality of sealing rings (303) correspond to a plurality of groups of air inlet holes (203) in a one-to-one manner, and the sealing rings (303) are sleeved on the outside of the air inlet holes (203).
6. The combined silicon carbide diffusion furnace tube according to claim 1, characterized in that: A plurality of groups of limiting plates (501) are fixedly connected to one inner side surface of the quartz boat (5), the plurality of groups of limiting plates (501) are equidistantly distributed, and a silicon wafer (502) is placed in the middle of each group of limiting plates (501).
7. The combined silicon carbide diffusion furnace tube according to claim 1, characterized in that: The quartz boat (5) is provided with protrusions (503) on both sides, and the protrusions (503) are slidably connected in a sliding groove on one side of the guide bar (4).
Citation Information
Patent Citations
Diffusion furnace tube and diffusion furnace
CN217351624U