Process chamber and thin film deposition equipment

Abstract

The utility model provides a process chamber and thin film deposition equipment. The process chamber comprises a cavity, an upper electrode assembly, a control assembly and a lower electrode assembly. A reaction cavity is formed in the cavity. The upper electrode assembly comprises a flow uniformizing plate, the flow uniformizing plate is arranged in the reaction cavity, the flow uniformizing plate is provided with a plurality of vent holes, and the vent holes can allow gas to be sent to the reaction cavity through the flow uniformizing plate. And the control assembly is used for adjusting the flow of gas passing through each vent hole. The lower electrode assembly and the upper electrode assembly are matched to form a reaction area, and the reaction area is used for containing the sheet-shaped material to execute the process. According to the process chamber and the thin film deposition equipment, the uniform flow plate with the plurality of vent holes is arranged in the reaction cavity, and the control assembly is arranged to adjust the flow of the reaction gas passing through the vent holes, so that the reaction gas can uniformly pass through the vent holes to be uniformly distributed above the flaky material, and the purpose of uniform gas distribution is achieved; and therefore, the deposition uniformity is improved.

Description

Technical Field

[0001] The present application relates to the field of film coating technology, and in particular to a process chamber and a thin film deposition device. Background Art

[0002] In the current photovoltaic coating process, especially in Topcon (tunneling oxide passivation contact) cells, aluminum oxide (Al 2 O 3 ) is a key thin film layer that is used to cover the n-type silicon substrate of the battery. Currently, the mainstream processes for preparing aluminum oxide thin film layers are mainly ALD (Atomic Layer Deposition) and PEALD (Plasma Enhanced Atomic Layer Deposition).

[0003] Traditional ALD is achieved through thermal deposition: the precursor gas is alternately introduced into a reaction chamber heated to a certain temperature, and then decomposed by heat and reacted alternately to achieve atomic-level solid coating. PEALD uses glow discharge to generate low-temperature plasma to decompose the precursor, which can greatly enhance the chemical activity of the reactant at a lower temperature, thereby achieving coating.

[0004] However, existing PEALD equipment has low efficiency and uneven gas distribution, which affects the quality of the film layer. Utility Model Content

[0005] In view of this, the present application proposes a process chamber and a thin film deposition equipment to solve at least one of the above problems.

[0006] The present application proposes a process chamber, which includes a chamber, an upper electrode assembly, a control assembly and a lower electrode assembly. The chamber forms a reaction chamber. The upper electrode assembly includes a flow plate, which is arranged in the reaction chamber, and the flow plate has a plurality of vents, and the vents are configured to allow gas to enter the reaction chamber through the flow plate. The control assembly is used to adjust the gas flow through each vent. The lower electrode assembly cooperates with the upper electrode assembly to form a reaction area, and the reaction area is used to accommodate sheet materials to perform a process.

[0007] In one embodiment, the control assembly includes a delivery pipe and a plurality of delivery branch pipes connected to the delivery pipe. The number of the delivery branch pipes corresponds to the number of the vents of the flow equalizer plate, the pipe opening of each delivery branch pipe is connected to a vent, and each delivery branch pipe is provided with a control valve.

[0008] In one embodiment, the process chamber further comprises a pumping plate and at least one pumping assembly arranged in the reaction chamber. Each pumping assembly comprises a pumping pipeline, a pumping pump and an exhaust pipeline. One end of the pumping pipeline is connected to the pumping plate, the other end of the pumping pipeline is connected to the pumping pump, and the exhaust pipeline is connected to the pumping pump.

[0009] In one embodiment, the first air inlet assembly includes a first air inlet pipe, a second air inlet pipe and a first pipeline. The first air inlet pipe and the second air inlet pipe are both connected to one end of the first pipeline, and the other end of the first pipeline is connected to the gas distributor. The first air inlet pipe is used to introduce the precursor gas into the reaction chamber, and the second air inlet pipe is used to introduce the reaction gas into the reaction chamber.

[0010] In one embodiment, the first air inlet assembly further includes a third air inlet pipe. The third air inlet pipe is connected to the first pipeline and is used to introduce carrier gas into the reaction chamber.

[0011] In one embodiment, a first valve is provided on the first air intake pipe, a second valve is provided on the second air intake pipe, and a third valve is provided on the third air intake pipe.

[0012] In one embodiment, the process chamber further comprises a pressure monitoring gauge disposed outside the reaction chamber, and the pressure monitoring gauge is used to monitor the gas pressure in the reaction chamber.

[0013] The present application proposes a thin film deposition device, which includes a plasma power supply and the above-mentioned process chamber. The plasma power supply is arranged outside the process chamber, one end of the plasma power supply is connected to the upper electrode assembly, and the other end is connected to the lower electrode assembly.

[0014] In one embodiment, the thin film deposition equipment also includes front and rear end chambers and a transmission line. The front and rear end chambers are used to receive sheet materials transported by the transmission line. The front and rear end chambers include a loading chamber, a buffer chamber, a discharging chamber, and a unloading chamber. The loading chamber, the buffer chamber, the process chamber, the discharging chamber, and the unloading chamber are arranged in sequence according to the processing order.

[0015] In one embodiment, a cleaning element is provided in the feeding chamber, and the cleaning element is used to clean impurities on the surface of the sheet material. A heating element is provided in the buffer chamber, and the heating element is used to heat the sheet material.

[0016] The process chamber and thin film deposition equipment of the present application, by arranging a uniform flow plate with multiple air holes in the reaction chamber, and arranging a control component to adjust the flow rate of the reaction gas passing through the air holes, can make the reaction gas pass through the air holes evenly and be evenly distributed above the sheet material, thereby achieving the purpose of uniform gas distribution and further improving the uniformity of deposition. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a schematic structural diagram of a thin film deposition device according to one embodiment of the present application.

[0018] Figure 2 for Figure 1 A schematic structural diagram of a process chamber of a thin film deposition apparatus in one embodiment is shown.

[0019] Figure 3 for Figure 1 The structure of a process chamber of a thin film deposition device in another embodiment is shown.

[0020] Main component symbols

[0021] Thin film deposition equipment 100

[0022] Sheet material 200

[0023] Loading chamber 10

[0024] Buffer chamber 20

[0025] Process chamber 30

[0026] Discharging chamber 40

[0027] Unloading chamber 50

[0028] Base 60

[0029] Cleaning parts 11

[0030] Heating element 21,341

[0031] Reaction chamber 31

[0032] Upper electrode assembly 32

[0033] Control component 33

[0034] Lower electrode assembly 34

[0035] Plasma power supply 35

[0036] First air intake assembly 36

[0037] Second air intake assembly 37

[0038] Extraction plate 38

[0039] Air extraction assembly 39

[0040] Pressure monitoring gauge 70

[0041] Flow plate 321

[0042] Ventilation hole 322

[0043] Delivery pipe 331

[0044] Delivery branch pipe 332

[0045] Control valve 333

[0046] First air intake pipe 361

[0047] Second air intake pipe 362

[0048] First pipeline 363

[0049] The third intake pipe 364

[0050] Fourth air inlet 371

[0051] Fourth intake pipe 372

[0052] Fourth valve 373

[0053] Exhaust pipe 391

[0054] Vacuum pump 392

[0055] Exhaust duct 393

[0056] Valve 394

[0057] First air inlet 3611

[0058] First branch pipe 3612

[0059] First Valve 3613

[0060] Second air inlet 3621

[0061] Second branch pipe 3622

[0062] Second valve 3623

[0063] The third air inlet 3641

[0064] The third branch pipe 3642

[0065] The third valve 3643

[0066] The following specific implementation manner will further illustrate the embodiments of the present application in conjunction with the above-mentioned drawings. DETAILED DESCRIPTION

[0067] Unless otherwise defined, all technical and scientific terms used herein are identical with the meanings generally understood by those skilled in the art of the technical field belonging to the embodiments of the present application. The terms used herein are only for the purpose of describing specific embodiments and are not intended to limit the embodiments of the present application. The reagents used or the instruments that do not indicate the manufacturer are conventional products that can be obtained by commercial purchase.

[0068] It should be noted that all directional indications in the embodiments of the present application (such as up, down, left, right, front, back, etc.) are only used to explain the relative position relationship, movement status, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0069] It will be understood that when a component is referred to as being "fixed to," "mounted to," or "disposed on" another component, it may be directly on the other component or there may also be an intervening component.

[0070] Some embodiments of the present application are described in detail below in conjunction with the accompanying drawings. In the absence of conflict, the following embodiments and features in the embodiments can be combined with each other.

[0071] See also Figure 1 The present application provides a thin film deposition device 100, which can use the PEALD process to deposit an oxide film on the surface of a sheet material 200. The sheet material 200 can be but not limited to a silicon wafer, and the oxide film can be but not limited to aluminum oxide (Al 2 O 3 ), the thickness of the oxide film can be approximately 3nm to 10nm. Figure 1 As shown, the thin film deposition device 100 may include a loading chamber 10, front and rear chambers, a transmission line (not shown) and a base 60. The front and rear chambers are used to receive the sheet material conveyed by the transmission line, and the front and rear chambers include a buffer chamber 20, a process chamber 30, a discharge chamber 40, and a discharge chamber 50. The loading chamber 10, the buffer chamber 20, the process chamber 30, the discharge chamber 40 and the discharge chamber 50 are arranged in sequence according to the processing order, and the loading chamber 10, the buffer chamber 20, the process chamber 30, the discharge chamber 40 and the discharge chamber 50 are all arranged on the base 60.

[0072] like Figure 1 As shown, the loading chamber 10 may be provided with a cleaning member 11, which may be, but is not limited to, a plasma cleaning instrument. After the sheet material 200 enters the loading chamber 10, the plasma cleaning instrument blows out plasma (e.g., H 2 , Ar, N 2 The sheet material 200 is cleaned by using a gas such as a gas (such as a gas) to clean the impurities on the surface of the sheet material 200, thereby completing the pre-cleaning of the sheet material 200. Then, the sheet material 200 is transported to the buffer chamber 20 through a transmission line, and a heating element 21 may be provided in the buffer chamber 20. The buffer chamber 20 is evacuated and the heating element 21 is turned on to heat and raise the temperature, so that the sheet material 200 is heated to quickly reach the coating condition in the subsequent steps.

[0073] Next, the sheet material 200 enters the process chamber 30. In the process chamber 30, a layer of oxide film of a predetermined thickness will be deposited on the surface of the sheet material 200 to complete the coating operation. For example, the main steps of the PEALD process in the process chamber 30 are: introducing a precursor gas into the cavity of the process chamber 30, and the precursor gas atoms freely diffuse on the surface of the sheet material 200; introducing a purge gas into the cavity to purge the remaining unreacted precursor gas; introducing a reaction gas into the cavity, and ionizing the reaction gas to generate charged particles (such as electrons and ions), which will interact with the surface of the sheet material 200, causing the reaction gas molecules to adsorb onto the sheet material 200, and chemically react with the precursor gas to generate an oxide film; introducing a purge gas into the cavity to purge the remaining unreacted gas and by-products.

[0074] Then, the plated sheet material 200 will enter the discharge chamber 40 for cooling and other operations. Finally, the plated sheet material 200 will enter the unloading chamber 50, and the entire operation process is completed.

[0075] The structure of the process chamber 30 will be described in detail below.

[0076] See also Figure 2 and Figure 3 The process chamber 30 includes a cavity (forming a reaction chamber 31), an upper electrode assembly 32, a control assembly 33 and a lower electrode assembly 34. The upper electrode assembly 32 includes a flow plate 321, which can be arranged at the top of the reaction chamber 31 corresponding to the lower electrode assembly 34. The flow plate 321 has a plurality of vents 322, and the vents 322 can penetrate the flow plate 321 along the thickness direction. The vents 322 allow the reaction gas to pass through the flow plate 321 to the reaction chamber 31. The control assembly 33 is used to adjust the flow rate of the reaction gas passing through each vent 322. The lower electrode assembly 34 cooperates with the upper electrode assembly 32 to form a reaction area, and the reaction area is used to accommodate the sheet material 200 to perform the process.

[0077] The process chamber 30 of the present application, by arranging a uniform flow plate 321 with multiple air holes 322 in the reaction chamber 31, and arranging a control component 33 to adjust the flow rate of the reaction gas passing through the air holes 322, can make the reaction gas pass through each air hole 322 evenly and be evenly distributed above the sheet material 200, so as to achieve the purpose of uniform gas distribution, thereby improving the uniformity of deposition.

[0078] like Figure 2 and Figure 3As shown, in some embodiments, the control component 33 includes a delivery pipe 331 and a plurality of delivery branch pipes 332 connected to the delivery pipe 331. Each delivery branch pipe 332 is substantially perpendicular to the delivery pipe 331, and each delivery branch pipe 332 is substantially parallel to each other. The number of delivery branch pipes 332 corresponds to the number of vents 322 on the flow plate 321, and the pipe mouth of each delivery branch pipe 332 is connected to a vent 322. A control valve 333 is provided on each delivery branch pipe 332, and the control valve 333 can be arranged in the reaction chamber 31 or outside the reaction chamber 31, and the present application does not limit it. The control valve 333 can be, but is not limited to, a mass flow controller (MFC). After the reaction gas passes through the delivery pipe 331, it is transported to the reaction chamber 31 through each delivery branch pipe 332 and the vent 322. The control valve 333 can control the flow rate of the gas passing through each vent 322, thereby achieving the purpose of uniform gas distribution and improving the uniformity of deposition.

[0079] like Figure 2 and Figure 3 As shown, in some embodiments, the lower electrode assembly 34 is disposed in the reaction chamber 31, and the lower electrode assembly 34 can be used to carry the sheet material 200 and heat the sheet material 200. The lower electrode assembly 34 is generally a plate-like structure, and a heating element 341 is disposed inside it. The heating element 341 generates heat after being heated, and the heating element 341 can be, but is not limited to, a heating wire or an oil pipe, and a portion of the heating element 341 can extend outside the reaction chamber 31. Integrating the heating element 341 inside the plate-like structure can not only make the heat generated by the heating element 341 evenly transferred to the sheet material 200, but the plate-like structure can also act as a supporting plate to place the sheet material 200 on the plate-like structure, thereby simplifying the structure inside the reaction chamber 31.

[0080] like Figure 2 and Figure 3 As shown, in some embodiments, the process chamber 30 further includes a plasma power supply 35. The plasma power supply 35 is arranged outside the reaction chamber 31, and the plasma power supply 35 is used to ionize the gas in the reaction chamber 31 to generate plasma. The positive electrode (anode) of the plasma power supply 35 is connected to the flow plate 321 of the upper electrode assembly 32, and the negative electrode (cathode) of the plasma power supply 35 is connected to the lower electrode assembly 34. After the plasma power supply 35 is turned on, a reaction area is formed between the upper electrode assembly 32 and the lower electrode assembly 34, and the sheet material 200 is subjected to the process of depositing an oxide film in the reaction area. The flow plate 321 of the upper electrode assembly 32 is connected to the positive electrode of the plasma power supply 35, which can make the distribution of the plasma gas more uniform, and help to improve the uniformity of the oxide film layer. By arranging the lower electrode assembly 34 (heatable) and the plasma power supply 35 in the process chamber 30, the heating deposition is combined with the plasma deposition method, and the problem of slow reaction caused by the failure to meet the excitation conditions alone can be improved during the deposition process, thereby improving the quality and efficiency of the film formation.

[0081] like Figure 2 and Figure 3 As shown, in some embodiments, the process chamber 30 further includes a first air intake assembly 36. The first air intake assembly 36 includes a first air intake pipe 361, a second air intake pipe 362 and a first pipeline 363. The first air intake pipe 361 and the second air intake pipe 362 are both connected to one end of the first pipeline 363, and the other end of the first pipeline 363 is connected to the delivery pipe 311 of the control assembly 33. The first air intake pipe 361 is used to introduce a precursor gas into the reaction chamber 31, and the second air intake pipe 362 is used to introduce a reaction gas into the reaction chamber 31. The precursor gas may be, but is not limited to, trimethylaluminum (molecular formula: C 3 H 9 Al, Trimethylaluminium, referred to as TMA), the reaction gas may be but is not limited to water vapor (H 2 Ozone (O 3 ), oxygen (O 2 ) or nitrous oxide (N 2 O).

[0082] Furthermore, the first air inlet assembly 36 may further include a third air inlet pipe 364. The third air inlet pipe 364 is connected to the first pipeline 363, and the third air inlet pipe 364 is used to introduce a carrier gas into the reaction chamber 31. The carrier gas may be, but is not limited to, argon (Ar) or nitrogen (N 2 ). By providing the first air inlet pipe 361, the second air inlet pipe 362, and the third air inlet pipe 364 to respectively transport the precursor gas, the reaction gas, and the carrier gas, each gas can be more conveniently regulated.

[0083] Further, the first air inlet pipe 361 may include a first air inlet 3611 and a first branch pipe 3612 connected to the first air inlet 3611, and a first valve 3613 may be provided on the first branch pipe 3612. The second air inlet pipe 362 may include a second air inlet 3621 and a second branch pipe 3622 connected to the second air inlet 3621, and a second valve 3623 may be provided on the second branch pipe 3622. The third air inlet pipe 364 may include a third air inlet 3641 and a third branch pipe 3642 connected to the third air inlet 3641. One end of the third branch pipe 3642 away from the third air inlet 3641 is connected to the first pipeline 363, and one end of the third branch pipe 3642 close to the first pipeline 363 may be provided with a third valve 3643. One end of the first branch pipe 3612 away from the first air inlet 3611 may be connected to the third branch pipe 3642, thereby being connected to the first pipeline 363. One end of the second branch pipe 3622 away from the second air inlet 3621 can be connected to the third branch pipe 3642, and thus connected to the first pipeline 363. The connection between the first branch pipe 3612 and the third branch pipe 3642 and the connection between the second branch pipe 3622 and the third branch pipe 3642 are both arranged between the third air inlet 3641 and the third valve 3643. The valves are arranged on each air inlet pipe, so that the opening and closing of each air inlet pipe can be conveniently controlled.

[0084] like Figure 2 and Figure 3 As shown, in some embodiments, the process chamber 30 further includes a second gas inlet assembly 37. The second gas inlet assembly 37 is used to introduce a purge gas into the reaction chamber 31, and the purge gas may be, but is not limited to, nitrogen or argon. The second gas inlet assembly 37 includes a fourth gas inlet port 371 and a fourth gas inlet pipe 372 connected to the fourth gas inlet port 371. A fourth valve 373 may be provided between the fourth gas inlet port 371 and the fourth gas inlet pipe 372, and the fourth gas inlet pipe 372 extends into the reaction chamber 31, thereby communicating with the reaction chamber 31. The portion of the fourth gas inlet pipe 372 located in the reaction chamber 31 is approximately located on one side of the lower electrode assembly 34, that is, approximately located on one side of the sheet material 200, so that the input purge gas can be conveniently used to purge the surface of the sheet material 200. By arranging the first gas inlet assembly 36 and the second gas inlet assembly 37 to respectively deliver the precursor gas and the purge gas, the doping effect during the gas pulse process can be reduced.

[0085] like Figure 2 and Figure 3As shown, in some embodiments, the process chamber 30 further includes a pumping plate 38 and at least one pumping assembly 39 disposed in the reaction chamber 31. The pumping plate 38 may be disposed in a position close to the bottom of the reaction chamber 31 corresponding to the lower electrode assembly 34 (i.e., corresponding to the sheet material 200). The pumping plate 38 may be a hollow structure, and a plurality of evenly distributed pumping holes (not shown) are disposed on the top and bottom thereof. When the pumping assembly 39 pumps and recovers the precursor gas or the reaction gas in the reaction chamber 31, the pumping plate 38 can make the pumping uniform, reduce the air flow disturbance, and thus reduce the impact on the film layer. Figure 2 The process chamber 30 in the embodiment includes a set of exhaust components 39, Figure 3 The process chamber 30 in the embodiment contains two sets of exhaust components 39. Each set of exhaust components 39 includes an exhaust pipe 391, an exhaust pump 392 and an exhaust pipe 393. One end of the exhaust pipe 391 is connected to the exhaust plate 38, and the other end of the exhaust pipe 391 is connected to the exhaust pump 392. A valve 394 may be provided on the exhaust pipe 391. The exhaust pipe 393 is connected to the exhaust pump 392. When there are two sets of exhaust components 39, one set can be used to recover the precursor gas, and the other set can be used to recover the reaction gas. The precursor gas and the reaction gas are recovered through different exhaust components 39 respectively, which can prevent the two gases from being corroded and damaged by using the same exhaust component 39 for a long time, thereby improving the corrosion resistance of the exhaust component 39.

[0086] like Figure 2 and Figure 3 As shown, in some embodiments, the reaction chamber 31 can also be grounded to ensure the normal operation and electrical safety of the thin film deposition apparatus 100.

[0087] like Figure 3 As shown, in some embodiments, the process chamber 30 further includes a pressure monitoring gauge 70 disposed outside the reaction chamber 31 to monitor the gas pressure in the reaction chamber 31 .

[0088] The following will be based on the deposition of Al on the silicon wafer (i.e. the sheet material 200). 2 O 3 Taking the thin film deposition device 100 of the present application as an example, the method of using the thin film deposition device 100 of the present application is described in detail.

[0089] S1: Loading. The silicon wafer to be coated is placed in the loading chamber 10 by an automated robot, and after being cleaned by the cleaning element 11 above, the silicon wafer is transported to the buffer chamber 20. The buffer chamber 20 is evacuated and the heating element 21 is turned on to heat it up, so that the silicon wafer can quickly reach the coating condition after entering the reaction chamber 31.

[0090] S2: Cleaning. The silicon wafer enters the reaction chamber 31 of the process chamber 30, and the reaction chamber 31 is evacuated to 10 -3pa, and at the same time raise the temperature to 80℃~150℃. Open the second air inlet assembly 37 and introduce the purge gas N 2 (or Ar) is purged, the flow rate of the purging gas is about 3000 sccm, and the purging time is 5s to 10s, to clean the silicon wafer. The plasma power supply 35 is turned on to ionize the gas in the reaction chamber 31 to form a glow.

[0091] S3: Precursor gas deposition. The first gas inlet pipe 361 is opened to pass the precursor gas TMA into the reaction chamber 31. During the pulsed introduction of TMA, the third gas inlet pipe 364 is opened to pass the carrier gas Ar (or N2) for transporting TMA. The pressure in the reaction chamber 31 is maintained at about 2Pa ​​to 10Pa, and the introduction time of TMA is 3s to 5s, so that TMA atoms can diffuse freely on the surface of the silicon wafer.

[0092] S4: Purge. 500 sccm to 3000 sccm of purge gas N2 (or Ar gas) is introduced into the reaction chamber 31 for 5s to 10s. After completion, the chamber is evacuated to a low pressure (10 -3 pa or so).

[0093] S5: Introduce reaction gas. Open the second gas inlet pipe 362 and introduce water vapor (or O3, N 2 O), and the carrier gas Ar (or N 2 ) are opened at the same time, the pressure is maintained at about 2Pa~10Pa, the introduction time is 3s~5s, under the action of plasma power 35 and heating temperature, TMA reacts with the reaction gas to produce Al 2 O 3 .

[0094] S6: Purge again. 500 sccm to 3000 sccm of N is introduced into the reaction chamber 31. 2 As a purge gas, the duration of the gas is 5s to 10s. 2 O 3 The excess unreacted gas on the surface of the film layer is blown out and extracted through the exhaust plate 38 and the exhaust assembly 39.

[0095] S7: Cyclic coating. Steps S3 to S6 are repeated multiple times to achieve the required film thickness (3nm-10nm).

[0096] The process chamber 30 and thin film deposition equipment 100 of the present application can make the reaction gas evenly distributed above the sheet material 200 by setting a uniform flow plate 321 and a control component 33 in the reaction chamber 31, so as to achieve the purpose of uniform gas distribution, thereby improving the uniformity of deposition. The present application combines the heating deposition with the plasma deposition method by setting a lower electrode assembly 34 (heatable) 0 and a plasma power supply 35, which can improve the problem of slow reaction caused by the failure of the excitation conditions alone during the deposition process, thereby improving the quality and efficiency of film formation. In addition, the uniform flow plate 321 of the upper electrode assembly 32 is connected to the positive pole of the plasma power supply 35, which can make the distribution of plasma gas more uniform, which helps to improve the uniformity of the oxide film layer. In addition, by setting a first gas inlet assembly 36 and a second gas inlet assembly 37 to respectively transport the precursor gas and the purge gas, the doping effect during the gas pulse process can be reduced. Furthermore, by providing a plurality of exhaust assemblies 39 to recover the precursor gas and the reaction gas respectively, it is possible to prevent the two gases from reacting and causing corrosion damage to the exhaust assemblies 39 , thereby improving the corrosion resistance of the exhaust assemblies 39 .

[0097] The above descriptions are some specific implementations of the present application, but they are not limited to these implementations in actual application. For ordinary technicians in this field, other variations and changes made according to the technical concept of the present application should all fall within the protection scope of the present application.

Claims

1. A process chamber, characterized in that: include: A cavity body is formed with a reaction cavity; An upper electrode assembly, comprising a flow plate, the flow plate being disposed in the reaction chamber, and the flow plate having a plurality of vents, the vents being configured to allow gas to enter the reaction chamber; A control component, used for adjusting the flow rate of the gas passing through each of the vents; A lower electrode assembly cooperates with the upper electrode assembly to form a reaction area, wherein the reaction area is used to accommodate sheet materials to perform a process.

2. The process chamber according to claim 1, characterized in that: The control component includes a delivery pipe and a plurality of delivery branch pipes connected to the delivery pipe. The number of the delivery branch pipes corresponds to the number of the vents of the flow equalizer plate. The pipe mouth of each delivery branch pipe is connected to a vent, and a control valve is provided on each delivery branch pipe.

3. The process chamber according to claim 1, characterized in that: It also includes an exhaust plate and at least one exhaust component arranged in the reaction chamber, the exhaust plate is provided with a plurality of exhaust holes; each of the exhaust components includes an exhaust pipe, an exhaust pump and an exhaust pipe, one end of the exhaust pipe is connected to the exhaust plate, the other end of the exhaust pipe is connected to the exhaust pump, and the exhaust pipe is connected to the exhaust pump.

4. The process chamber according to claim 1, characterized in that: It also includes a first air intake assembly, which includes a first air intake pipe, a second air intake pipe and a first pipeline. The first air intake pipe and the second air intake pipe are both connected to one end of the first pipeline, and the other end of the first pipeline is connected to the control assembly; the first air intake pipe is used to introduce precursor gas into the reaction chamber, and the second air intake pipe is used to introduce reaction gas into the reaction chamber.

5. The process chamber according to claim 4, characterized in that: The first air inlet assembly also includes a third air inlet pipe, which is connected to the first pipeline and is used to introduce carrier gas into the reaction chamber.

6. The process chamber according to claim 5, characterized in that: The first air intake pipe is provided with a first valve, the second air intake pipe is provided with a second valve, and the third air intake pipe is provided with a third valve.

7. The process chamber according to claim 1, characterized in that: The process chamber further comprises a pressure monitoring gauge arranged outside the reaction chamber, and the pressure monitoring gauge is used to monitor the gas pressure in the reaction chamber.

8. A thin film deposition device, characterized in that: It comprises a plasma power supply and a process chamber as described in any one of claims 1 to 7, wherein the plasma power supply is arranged outside the process chamber, one end of the plasma power supply is connected to the upper electrode assembly, and the other end of the plasma power supply is connected to the lower electrode assembly.

9. The thin film deposition device according to claim 8, characterized in that: It also includes front and rear end chambers and a transmission line, the front and rear end chambers are used to receive the sheet materials conveyed by the transmission line, the front and rear end chambers include a loading chamber, a buffer chamber, a discharging chamber, and a unloading chamber, and the loading chamber, the buffer chamber, the process chamber, the discharging chamber and the unloading chamber are arranged in sequence according to the processing order.

10. The thin film deposition device according to claim 9, characterized in that: A cleaning element is provided in the feeding chamber, and the cleaning element is used to clean impurities on the surface of the sheet material; a heating element is provided in the buffer chamber, and the heating element is used to heat the sheet material.

Images