Monocrystalline silicon re-feeding device and single crystal furnace

Abstract

The utility model provides a single crystal silicon re-feeding device and a single crystal furnace, and relates to the technical field of single crystal silicon equipment, and the single crystal silicon re-feeding device comprises a barrel body, a supporting assembly, a lifting assembly and a material guiding piece, the cylinder body comprises a hollow cavity, a feed port and a discharge port, and the supporting assembly is connected with the cylinder body; the lifting assembly comprises a lifting piece and a material blocking piece, the lifting piece is movably connected with the supporting assembly, the lifting piece penetrates through the cavity, and the material blocking piece is connected with the end, close to the discharging port, of the lifting piece so that the discharging port can be closed through the material blocking piece; the material guiding piece is arranged on the lifting piece, and the material guiding piece of the spiral structure can form a plurality of material guiding channels in the cavity. The single crystal silicon feeding device can be used for feeding single crystal silicon, the lifting piece is movably connected with the supporting assembly, the lifting piece is controlled to drive the material blocking piece to move, and the material guiding piece limits and buffers the discharging speed, so that the impact on the material blocking piece is reduced, the service life of the material blocking piece is prolonged, and the influence on the product quality of silicon rods is reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of single crystal silicon equipment, in particular to a single crystal silicon re-feeding device and a single crystal furnace. Background Art

[0002] The production of single crystal silicon generally adopts the direct pulling method. In order to reduce costs, the continuous re-feeding crystal pulling process is gradually adopted. The current feeding device used for re-feeding single crystal silicon has the following problems: 1. The silicon material is fed at a fast speed and is easy to fall to the outside of the crucible, which will cause the crucible side and the heater to spark or even penetrate the crucible side and cause production accidents; 2. When the silicon material is fed too quickly and falls into the crucible, it causes liquid splashing and adhesion, affecting the quality of subsequent silicon rod products; 3. The fast feeding speed of the silicon material causes impact on the quartz cone below, affecting the service life of the quartz cone. Utility Model Content

[0003] The utility model aims to provide a single crystal silicon re-feeding device and a single crystal furnace, which can be used for single crystal silicon feeding, limit and buffer the feeding rate, slow down the feeding speed, and reduce the impact on the product quality of silicon rods.

[0004] A first aspect of the utility model provides a single crystal silicon re-feeding device, which comprises a cylinder, a supporting assembly, a pulling assembly and a material guide.

[0005] A cylinder, the cylinder comprising a hollow cavity, a feed port and a discharge port, the feed port being arranged at one end of the cavity, and the discharge port being arranged at an end of the cavity away from the feed port;

[0006] A support assembly, the support assembly being connected to one end of the barrel close to the feed inlet;

[0007] A lifting component, the lifting component comprising a lifting member and a material blocking member, the lifting member is movably connected to the supporting component and the lifting member passes through the cavity, and the material blocking member is connected to one end of the lifting member close to the material outlet so that the material blocking member can close the material outlet;

[0008] A material guiding member is arranged on the lifting member, and the material guiding member is arranged between the material blocking member and the supporting assembly. The material guiding member with a spiral structure can form a plurality of material guiding channels in the cavity.

[0009] In a possible embodiment of the present invention, the number of the material guiding members is three, the number of the material guiding channels is one, and the three material guiding members are arranged at intervals along the axial direction of the lifting member.

[0010] In a possible embodiment of the present invention, a plurality of the material guiding members can be continuously arranged on the lifting member, and the number of the material guiding channels is multiple, and one material guiding member corresponds to one material guiding channel.

[0011] In a possible embodiment of the present invention, two adjacent material guiding channels are separated by a partition.

[0012] In a possible embodiment of the present invention, the two material guiding channels can form a double-layer spiral structure.

[0013] In a possible embodiment of the present invention, there are two material guiding channels, and the volumes of the two material guiding channels are equal.

[0014] In a possible embodiment of the present invention, the number of the material guiding channels is two, and the volumes of the two material guiding channels are Q1 and Q2 respectively, satisfying: Q2≤Q1≤3Q2.

[0015] In a possible embodiment of the present invention, the material guiding member can be arranged on a side wall surface of the cavity.

[0016] In a possible embodiment of the present invention, the cylinder includes a plurality of sub-cylinders, and two adjacent sub-cylinders are detachably connected.

[0017] A second aspect of the present invention provides a single crystal furnace, comprising the single crystal silicon re-feeding device described in any one of the above embodiments.

[0018] Compared with the prior art, the beneficial effects of the utility model are as follows: the single crystal silicon re-feeding device and single crystal furnace provided by the utility model can be used for single crystal silicon feeding, the pulling member is movably connected to the supporting assembly, and the material blocking member is driven to move by controlling the pulling member to open or close the discharge port, and when feeding through the feed port, the spiral structure of the material guide member enables the material to be discharged from the material guide channel and discharged according to a preset path. The material guide member limits and buffers the material discharge rate, slows down the material discharge speed, thereby reducing the impact on the material blocking member, extending the service life of the material blocking member, and reducing the impact on the product quality of the silicon rod. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions of the embodiments of the utility model, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the utility model and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying creative work.

[0020] Figure 1It is a schematic diagram of the structure of a single crystal silicon re-feeding device provided in some embodiments of the utility model;

[0021] Figure 2 The structure of the cylinder of the single crystal silicon re-feeding device provided in some embodiments of the utility model is schematically shown. Figure 1 ;

[0022] Figure 3 The structure of the cylinder of the single crystal silicon re-feeding device provided in some embodiments of the utility model is schematically shown. Figure 2 ;

[0023] Figure 4 A top view of the cylinder of the single crystal silicon re-feeding device provided in some embodiments of the utility model Figure 1 ;

[0024] Figure 5 A top view of the cylinder of the single crystal silicon re-feeding device provided in some embodiments of the utility model Figure 2 ;

[0025] Figure 6 It is a side view of the barrel of the single crystal silicon re-feeding device provided in some embodiments of the utility model.

[0026] Description of main component symbols;

[0027] 100-single crystal silicon re-feeding device; 110-cylinder; 111-cavity; 112-feeding port; 113-discharging port; 114-sub-cylinder; 120-support assembly; 121-support member; 122-fixing member; 130-lifting assembly; 131-lifting member; 132-material blocking member; 140-material guiding member; 150-material guiding channel; 151-partition. DETAILED DESCRIPTION

[0028] In order to make the purpose, technical scheme and advantages of the embodiments of the utility model clearer, the technical scheme in the embodiments of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiments of the utility model. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Generally, the components of the embodiments of the utility model described and shown in the drawings here can be arranged and designed in various different configurations.

[0029] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the present invention to be protected, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0030] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0031] In the description of the present utility model, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inside", "outside", etc. indicate the orientation or position relationship based on the orientation or position relationship shown in the accompanying drawings, or the orientation or position relationship in which the utility model product is usually placed when in use, which is only for the convenience of describing the utility model and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present utility model. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0032] In addition, the terms "horizontal", "vertical", "overhanging" and the like do not mean that the components are required to be absolutely horizontal or overhanging, but can be slightly tilted. For example, "horizontal" only means that its direction is more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0033] In the description of the present invention, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0034] In conjunction with the accompanying drawings, some embodiments of the present invention are described in detail below. In the absence of conflict, the following embodiments and features in the embodiments can be combined with each other.

[0035] Example 1

[0036] refer to Figure 1 As shown, an embodiment of the present application provides a single crystal silicon re-feeding device 100 , which includes a cylinder 110 , a supporting assembly 120 , a pulling assembly 130 and a material guide 140 .

[0037] The barrel 110 includes a hollow cavity 111, a feed port 112 and a discharge port 113, wherein the feed port 112 is arranged at one end of the cavity 111, and the discharge port 113 is arranged at the end of the cavity 111 away from the feed port 112; the support assembly 120 is connected to the end of the barrel 110 close to the feed port 112; the lifting assembly 130 includes a lifting member 131 and a material blocking member 132, wherein the lifting member 131 is movably connected to the support assembly 120, and the lifting member 131 passes through the cavity 111, and the material blocking member 132 is connected to the support assembly 120. The lifting member 131 is connected to one end close to the discharge port 113 so that the blocking member 132 can close the discharge port 113; the material guide member 140 is arranged on the lifting member 131, and the material guide member 140 is arranged between the blocking member 132 and the support assembly 120. The spiral structure of the material guide member 140 can form a plurality of material guide channels 150 in the cavity 111. The lifting member 131 is movably connected with the support assembly 120 to control the lifting member 131 to drive the blocking member 132 to move, so that the discharge port 113 is opened or closed, thereby controlling the discharge of the material from the discharge port 113. When feeding through the feed port 112, the spiral structure of the material guide member 140 allows the material to be discharged from the material guide channel 150, and the material is discharged according to the preset path, and the rate of material discharge is limited and buffered, and the material discharge speed is slowed down to reduce the impact on the blocking member 132.

[0038] It should be noted that the material blocking member 132 can be a quartz cone, which has a cone structure and can be used to close the discharge port 113 and act as a material blocking member. Of course, the quartz cone can be separated from the discharge port 113 to move the material from the discharge port 113 to the outside of the cylinder 110.

[0039] It can be understood that the support assembly 120 includes a support member 121 and a fixing member 122. The support member 121 can be movably connected with the lifting member 131, so that the lifting member 131 drives the material blocking member 132 to move, and the fixing member 122 keeps the position of the lifting member 131 fixed, and the material blocking member 132 can close the discharge port 113. Exemplarily, the support member 121 includes a first connecting rod and a second connecting rod, and the first connecting rod and the second connecting rod can be integrally formed or separately arranged. The fixing member 122 is a nut, and the material blocking member 132 is a quartz cone. The first connecting rod is connected to the side of the cylinder 110 through the second connecting rod. The first connecting rod and the second connecting rod are arranged vertically. The lifting member 131 can be inserted into the first connecting rod, and moves up and down relative to the first connecting rod to drive the quartz cone to move, and can be fixed by a nut. The quartz cone can close the discharge port 113 of the cylinder 110 or open the discharge port 113.

[0040] In the related art, there is only one material guiding channel 150 , and only a single material guiding channel 150 can be used for material unloading. The materials cannot be classified according to their size specifications, which may cause materials of different sizes to obstruct each other and block the material guiding channel 150 .

[0041] like Figure 1 As shown, specifically, the number of the material guide members 140 is three, the number of the material guide channel 150 is one, and the three material guide members 140 are arranged at intervals along the axial direction of the lifting member 131. In other words, in one material guide channel 150, the three material guide members 140 are arranged at intervals along the lifting member 131, and the three material guide members 140 can sequentially buffer and slow down the material passing through the material guide channel 150, and the material guide member 140 with a spiral structure slows down the material discharge speed, and at the same time can reduce the impact on the material blocking member 132. Of course, the number of the material guide members 140 can also be set to four, or the number of the material guide members 140 can also be set to five, and the multiple material guide members 140 are arranged at intervals along the axial direction of the lifting member 131.

[0042] Demonstratively, the distances between the three spaced-apart material guide members 140 are equal, so that when the material falls, it passes through the three material guide members 140 of the spiral structure, which reduces the falling rate of the material. This can reduce the splashing of silicon powder after the material falls into the single crystal furnace, and can also reduce the damage of the material blocking member 132, thereby increasing the service life of the material blocking member 132.

[0043] In one embodiment, specifically, referring to Figure 6 As shown, the material guide member 140 can be arranged on the side wall surface of the cavity 111. It can be understood that in one arrangement of the material guide member 140, the material guide member 140 may not be arranged on the lifting member 131, and the material guide member 140 may be arranged on the side wall surface of the cavity 111 of the cylinder 110, so that the material guide member 140 and the lifting member 131 are arranged separately. In the related art, during the operation of the lifting member 131 and the material blocking member 132, the lifting member 131 moves relatively to open or close the discharge port 113, thereby driving the material guide member 140 to move. Therefore, when the lifting member 131 and the material guide member 140 are arranged separately, the lifting member 131 will not affect the relative position of the material guide member 140.

[0044] Alternatively, if Figure 6As shown, the cylinder 110 includes a plurality of sub-cylinders 114, and any two adjacent sub-cylinders 114 can be detachably connected, so that the plurality of sub-cylinders 114 can be conveniently assembled, and are convenient for storage and organization. When damaged, there is no need to replace all of the cylinder 110, but only the corresponding damaged sub-cylinder 114 needs to be replaced. At the same time, the detachable plurality of sub-cylinders 114 facilitates cleaning of the interior of the cylinder 110, and prevents the cylinder 110 from being blocked and affecting subsequent material unloading.

[0045] In summary, in the present embodiment, the single crystal silicon re-feeding device 100 can be used for single crystal silicon feeding, the pulling member 131 is movably connected with the supporting assembly 120, and the material blocking member 132 is driven to move by controlling the pulling member 131, so that the discharge port 113 is opened or closed, and when feeding through the feed port 112, the spiral structure of the material guide member 140 enables the material to be discharged from the material guide channel 150, and the material is discharged according to a preset path, and the rate of discharge is limited and buffered, and the discharge speed is slowed down to reduce the impact on the material blocking member 132, extend the service life of the material blocking member 132, and reduce the impact on the product quality of the silicon rod.

[0046] Example 2

[0047] refer to Figures 1 to 3 As shown, an embodiment of the present application provides another single crystal silicon re-feeding device 100 , which includes a cylinder 110 , a support assembly 120 , a pulling assembly 130 and a material guide 140 .

[0048] In the related art, with the rapid development of granular silicon technology, the quality of granular silicon has gradually improved, but the size of granular silicon is small and contains more silicon powder. If the common feeding device is used to feed the material, the material will fall too fast, causing the silicon powder in the single crystal furnace to be lifted up after feeding. These silicon powders will adhere to the surface of the internal components of the single crystal furnace and the inner wall of the upper insulation cylinder; in the process of preparing single crystal silicon rods, there is a risk of silicon powder falling during the equal diameter process of single crystal growth. After falling, the atomic arrangement structure of single crystal silicon will change, resulting in the interruption of the single crystal silicon growth process. For other smaller sized silicon materials, similar problems also exist when feeding.

[0049] Specifically, the barrel 110 includes a hollow cavity 111, a feed port 112 and a discharge port 113. The feed port 112 is arranged at one end of the cavity 111, and the discharge port 113 is arranged at an end of the cavity 111 away from the feed port 112; the support assembly 120 is connected to one end of the barrel 110 close to the feed port 112.

[0050] Specifically, the lifting component 130 includes a lifting member 131 and a material blocking member 132. The lifting member 131 is movably connected to the supporting component 120 and passes through the cavity 111. The material blocking member 132 is connected to one end of the lifting member 131 close to the discharge port 113 so that the material blocking member 132 can close the discharge port 113.

[0051] Specifically, the material guide 140 is arranged on the lifting member 131, and the material guide 140 is arranged between the material blocking member 132 and the support assembly 120. The material guide 140 with a spiral structure can form a plurality of material guide channels 150 in the cavity 111. The lifting member 131 is movably connected with the support assembly 120 to drive the material blocking member 132 to move, so that the material outlet 113 is opened or closed, thereby controlling the discharge of the material outlet 113. When feeding through the feed port 112, the material guide 140 with a spiral structure allows the material to be discharged from the material guide channel 150, and the material is discharged according to a preset path, and the rate of material discharge is limited and buffered, and the material discharge speed is slowed down to reduce the impact on the material blocking member 132.

[0052] Optionally, the surface of the material guide 140 is coated with a wear-resistant layer, which may be a silicon nitride coating, which has a uniform structure, high mechanical strength, and good thermal shock resistance, or a silicon carbide coating, which has stable chemical properties, high thermal conductivity, small thermal expansion coefficient, and good wear resistance.

[0053] It should be noted that the material blocking member 132 may be a quartz cone, which has a cone structure and can be used to close the discharge port 113 and play a material blocking role.

[0054] In one embodiment, specifically, in combination Figure 2 and Figure 3 As shown, a plurality of the material guide members 140 can be continuously arranged on the lifting member 131, and the number of the material guide channels 150 is multiple, and one material guide member 140 corresponds to one material guide channel 150. Accordingly, the material can have a variety of sizes, so that materials of a variety of different sizes can be discharged through a plurality of material guide channels 150 respectively, and one material guide channel 150 can correspond to a material of one size, so as to achieve the classification process of material discharge, avoid the influence of materials of different sizes on each other, and improve the discharge efficiency.

[0055] Alternatively, if Figure 3As shown, two adjacent material guide channels 150 are separated by a partition 151, that is, the partition 151 can separate the multiple material guide channels 150, and each material guide channel 150 can form an independent space. Accordingly, a material guide member 140 is provided in each material guide channel 150, and the spiral structure of the material guide member 140 enables the material to be discharged from the material guide channel 150, and the material is discharged according to a preset path, thereby limiting and buffering the discharge rate.

[0056] Alternatively, if Figure 2 As shown, the two material guide channels 150 can form a double-layer spiral structure, and the two material guide members 140 of the double-layer spiral structure are double-layer spiral structures, which are parallel and have the same direction, so that the two material guide channels 150 are independently set and will not affect each other in material discharge, and are respectively used to discharge materials and slow down the material discharge speed. Further, multiple material guide channels 150 can form a multi-layer spiral structure. It can be understood that the multi-layer spiral structures are parallel to each other and have the same direction, so that the material guide channels 150 of the multiple spiral structures will not cause obstruction and interference to each other, so as to achieve the effect of simultaneous material discharge and slow down the material discharge rate.

[0057] Optionally, refer to Figure 4 As shown, there are two material guide channels 150, and the volumes of the two material guide channels 150 are equal, that is, the size specifications of the two material guide channels 150 are the same, so that the two material guide channels 150 can discharge materials independently, and the size specifications of the materials discharged by the two material guide channels 150 can be the same.

[0058] Optionally, refer to Figure 5 As shown, there are two material guide channels 150, and the volumes of the two material guide channels 150 are Q1 and Q2 respectively, satisfying: Q2≤Q1≤3Q2, that is, the size specifications of the two material guide channels 150 are different, so that the two material guide channels 150 can discharge materials independently. At the same time, the size specifications of the materials discharged by the two material guide channels 150 may be different. In the related technology, when the same material guide channel 150 is used for discharge, materials of different sizes may hinder each other and block the material guide channel 150. The two material guide channels 150 can be used to discharge materials of two different sizes respectively, thereby improving the discharge efficiency and reducing the blockage of the material guide channel 150 that affects the material discharge.

[0059] Exemplary, reference Figure 5As shown, the volume of the first material guide channel 150 is Q1, and the volume of the second material guide channel 150 is Q2. The volume Q1 of the first material guide channel 150 is equal to the volume Q2 of the second material guide channel 150, that is, the technical solution of the two material guide channels 150 having equal volumes, which will not be described in detail here. Alternatively, the volume Q1 of the first material guide channel 150 is greater than the volume Q2 of the second material guide channel 150. At this time, the size specifications of the two material guide channels 150 are different. When the material is discharged, the material is discharged through the first material guide channel 150 and the second material guide channel 150 respectively. The volume Q1 of the first material guide channel 150 can discharge silicon materials of larger size specifications, and the volume Q2 of the second material guide channel 150 can only discharge silicon materials of smaller size specifications. At least two sizes of silicon materials can be processed separately, reducing the blockage of the material guide channel 150, causing obstacles to each other and affecting the discharge rate. The volume Q1 of the first material guiding channel 150 is smaller than the volume 3Q2 of the second material guiding channel 150, Q1<3Q2, and the size specifications of the material discharge of the first material guiding channel 150 and the second material guiding channel 150 can be different. In addition, the volume Q1 of the first material guiding channel 150 can be equal to the volume 3Q2 of the second material guiding channel 150, that is, Q1=3Q2, so that the volume Q1 of the first material guiding channel 150 can have enough size space to discharge larger-sized materials and improve the discharge efficiency. Of course, the size specifications of Q1 and Q2 are not limited to this, and will not be listed one by one here.

[0060] In one embodiment, specifically, referring to Figure 6 As shown, the material guide member 140 can be arranged on the side wall surface of the cavity 111, so that the material guide member 140 and the lifting member 131 are separately arranged. In the related technology, during the operation of the lifting member 131 and the material blocking member 132, the lifting member 131 moves relatively to open or close the discharge port 113, thereby driving the material guide member 140 to move. Therefore, when the lifting member 131 and the material guide member 140 are separately arranged, the lifting member 131 will not affect the relative position of the material guide member 140.

[0061] In the related art, the cylinder 110 is an integrally formed structure, and local parts of the cylinder 110 may be damaged during production and use. If the cylinder 110 is damaged, it needs to be replaced with a new one, and the replacement cost is high.

[0062] Alternatively, if Figure 6As shown, the barrel 110 includes a plurality of sub-barrels 114, and two adjacent sub-barrels 114 can be detachably connected, so that the plurality of sub-barrels 114 are convenient to assemble, store and organize, and are convenient to replace. At the same time, the detachable plurality of sub-barrels 114 are convenient to clean the inside of the barrel 110, so as to avoid the blockage of the barrel 110 and affect the subsequent material feeding. Exemplarily, the two adjacent sub-barrels 114 are installed and connected by a connector, and the connector covers the outer circumference of the sub-barrel 114. The connector adopts a circular ring structure, and the connector can be threadedly connected to the sub-barrel 114, so as to facilitate the installation and removal of the sub-barrel 114.

[0063] The use method of the single crystal silicon re-feeding device:

[0064] S1: Classify the materials to be unloaded according to size specifications;

[0065] S2: Discharge materials of different sizes through the multiple material guide channels 150 respectively, and keep the material blocking member 132 to close the material outlet 113;

[0066] S3: placing the single crystal silicon re-feeding device 100 in the single crystal furnace, lowering the height of the single crystal silicon re-feeding device 100 in the single crystal furnace, opening the discharge port 113, and allowing the material to fall under the action of its own weight;

[0067] S4: raising and removing the single crystal silicon re-feeding device 100;

[0068] S5: Repeat the above steps.

[0069] Example 3

[0070] An embodiment of the utility model further provides a single crystal furnace, which includes the single crystal silicon re-feeding device 100 in Example 1 or Example 2. The single crystal furnace including the single crystal silicon re-feeding device 100 has all the beneficial effects of the single crystal silicon re-feeding device 100, which will not be described in detail here.

[0071] It should be noted that a single crystal furnace is a device that uses a graphite heater to melt polycrystalline materials such as polysilicon in an inert gas (mainly nitrogen and helium) environment and grows dislocation-free single crystals using the Czochralski method.

[0072] In all examples shown and described herein, any specific values ​​should be interpreted as merely exemplary and not as limiting, and thus other examples of the exemplary embodiments may have different values.

[0073] The above-mentioned embodiments only express several implementation methods of the present invention, and the description is relatively specific and detailed, but it cannot be understood as limiting the scope of the present invention. It should be pointed out that for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention.

Claims

1. A single crystal silicon re-feeding device, characterized in that: include: A cylinder, the cylinder comprising a hollow cavity, a feed port and a discharge port, the feed port being arranged at one end of the cavity, and the discharge port being arranged at an end of the cavity away from the feed port; A support assembly, the support assembly being connected to one end of the barrel close to the feed inlet; A lifting component, the lifting component comprising a lifting member and a material blocking member, the lifting member is movably connected to the supporting component and the lifting member passes through the cavity, and the material blocking member is connected to one end of the lifting member close to the material outlet so that the material blocking member can close the material outlet; A material guiding member is arranged on the lifting member, and the material guiding member is arranged between the material blocking member and the supporting assembly. The material guiding member with a spiral structure can form a plurality of material guiding channels in the cavity.

2. The single crystal silicon re-feeding device according to claim 1, characterized in that: The number of the material guiding members is three, the number of the material guiding channels is one, and the three material guiding members are arranged at intervals along the axial direction of the lifting member.

3. The single crystal silicon re-feeding device according to claim 1, characterized in that: A plurality of the material guiding members can be continuously arranged on the lifting member, and the number of the material guiding channels is plural, and one material guiding member corresponds to one material guiding channel.

4. The single crystal silicon re-feeding device according to claim 3, characterized in that: Two adjacent material guiding channels are separated by a partition plate.

5. The single crystal silicon re-feeding device according to claim 3, characterized in that: The two material guiding channels can form a double-layer spiral structure.

6. The single crystal silicon re-feeding device according to claim 3, characterized in that: The number of the material guiding channels is two, and the volumes of the two material guiding channels are equal.

7. The single crystal silicon re-feeding device according to claim 3, characterized in that: The number of the material guiding channels is two, and the volumes of the two material guiding channels are Q1 and Q2 respectively, satisfying: Q2≤Q1≤3Q2.

8. The single crystal silicon re-feeding device according to any one of claims 1 to 7, characterized in that: The material guiding member can be arranged on the side wall surface of the cavity.

9. The single crystal silicon re-feeding device according to claim 8, characterized in that: The cylinder includes a plurality of sub-cylinders, and two adjacent sub-cylinders can be detachably connected.

10. A single crystal furnace, characterized in that: A single crystal silicon re-feeding device comprising any one of claims 1 to 9.

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