Display device

Abstract

A display device according to an embodiment includes: a substrate including a display area and a non-display area; a transistor disposed on the substrate; a light emitting element electrically connected to the transistor; an encapsulation layer disposed on the light emitting element; a bank on the encapsulation layer and defining an opening in the bank; a color conversion layer in the opening; a filling layer on the bank and the color conversion layer; and a transmissive layer and a first spacer on the filling layer.

Description

[0001] This application claims priority to Korean Patent Application No. 10-2023-0084177, filed on June 29, 2023, and all benefits derived therefrom, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0002] The present disclosure relates to a display device. Background Art

[0003] The light emitting element is a device that emits light when excitons are formed and stabilized in a light emitting layer formed between an anode and a cathode where holes supplied from the anode and electrons supplied from the cathode are recombined.

[0004] Since light emitting elements have advantages such as a wide viewing angle, a fast response speed, a thin thickness, and low power consumption, they are widely used in various electric and electronic devices such as televisions, monitors, and mobile phones.

[0005] In order to realize a high-efficiency display device, a display device including a color conversion layer has been proposed.

[0006] The color conversion layer can convert incident light into light of different colors. Utility Model Content

[0007] Embodiments are directed to providing a display device having a spacer and a transmission layer formed on a substrate to prevent cracks from occurring in a manufacturing process and having improved reliability.

[0008] According to an embodiment, a display device includes: a substrate including a display area and a non-display area; a transistor disposed on the substrate; a light-emitting element electrically connected to the transistor; an encapsulation layer disposed on the light-emitting element; a dam located on the encapsulation layer and defining an opening; a color conversion layer located in the opening; a filling layer located on the dam and the color conversion layer; and a transmission layer and a first spacer located on the filling layer.

[0009] The openings may include a first opening, a second opening, and a third opening, and the color conversion layer may include: a first color conversion layer located in the first opening and including quantum dots; and a second color conversion layer located in the second opening and including quantum dots.

[0010] The transmission layer may overlap the third opening in a thickness direction of the substrate.

[0011] The filling layer may fill the third opening.

[0012] The transmission layer and the first spacer may include the same type of scatterer.

[0013] The heights of the transmission layer and the first spacer in the thickness direction may be the same.

[0014] The display device may further include: a second spacer located in the non-display area; and a sealant overlapping the second spacer in a thickness direction.

[0015] The second spacer and the transmission layer may have the same height in a thickness direction, and the second spacer and the transmission layer may include the same type of scatterer.

[0016] The display device may further include: an insulating layer on the transmission layer, the first spacer, and the filling layer; and a color filter on the insulating layer.

[0017] The color filter may include: a first color filter overlapping the transmission layer in the thickness direction; a second color filter overlapping the first color conversion layer in the thickness direction; and a third color filter overlapping the second color conversion layer in the thickness direction, and the embankment may overlap at least two of the first color filter, the second color filter and the third color filter in the thickness direction.

[0018] At least one of the first spacer and the second spacer may overlap at least two of the first color filter, the second color filter, and the third color filter in a thickness direction.

[0019] According to an embodiment, a display device includes: a substrate including a display area and a non-display area; a transistor disposed on the substrate; a light emitting element electrically connected to the transistor; an encapsulation layer disposed on the light emitting element; a dam disposed on the encapsulation layer and defining an opening in the dam; a color conversion layer disposed in the opening; a filling layer disposed on the dam and the color conversion layer; and a first transmission layer, a second transmission layer, and a first spacer disposed on the filling layer.

[0020] The openings may include a first opening, a second opening, and a third opening, and the color conversion layer may include a first color conversion layer located within the first opening.

[0021] The second opening may overlap the second transmission layer in the thickness direction of the substrate, and the third opening may overlap the first transmission layer in the thickness direction.

[0022] The filling layer may fill the second opening and the third opening.

[0023] The display device may further include: an insulating layer on the first transmission layer, the second transmission layer, and the filling layer; and a color filter on the insulating layer.

[0024] The first transmission layer, the second transmission layer, and the first spacer may have the same height in a thickness direction and may include the same type of scatterers.

[0025] The display device may further include: a second spacer located in the non-display area; and a sealant overlapping the second spacer in a thickness direction.

[0026] The second spacer and the first spacer may have the same height in the thickness direction and may include the same type of scatterer.

[0027] The light emitting element may emit a mixture of blue light and green light.

[0028] According to the embodiments, a display device having improved reliability and effectively preventing cracks generated in a manufacturing process may be provided by providing a display device having a spacer and a transmission layer disposed on an upper substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 is a schematic exploded perspective view of a display device according to an embodiment.

[0030] Figure 2 is a schematic cross-sectional view of a display panel according to an embodiment.

[0031] Figure 3 , Figure 4 and Figure 5 is a cross-sectional view of a display panel according to an embodiment.

[0032] <Description of the symbol>

[0033] DA: Display Area

[0034] PA: Non-display area

[0035] SUB1, SUB2: Substrate

[0036] ED: Light Emitting Element

[0037] CCL1, CCL2: Color conversion layer

[0038] TL: Transmission layer

[0039] BK1:Dike

[0040] FL: Filling layer

[0041] CS1, CS2: Spacers DETAILED DESCRIPTION

[0042] Hereinafter, various embodiments will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement the present invention.

[0043] The present invention may be embodied in many different forms and is not limited to the embodiments set forth herein.

[0044] In order to clearly describe the present invention, parts irrelevant to the description are omitted and the same reference numerals are assigned to the same or similar components throughout the specification.

[0045] In addition, since the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of explanation, the present invention is not necessarily limited to the shown contents.

[0046] In the drawings, the thickness is shown exaggerated to clearly indicate various layers and regions.

[0047] Also, in the drawings, the thicknesses of some layers and regions are exaggerated for convenience of explanation.

[0048] In addition, when a part such as a layer, film, region or plate is referred to as being “on” or “over” another part, this includes not only the case where the part is “directly on” the other part, but also includes the case where another part exists between the part and the other part.

[0049] In contrast, when a portion is referred to as being “directly on” another portion, it means that there is no other portion between the portion and the other portion.

[0050] In addition, “above” or “on” a reference portion means located above or below the reference portion, and does not necessarily mean located “above” or “on” the reference portion in an opposite direction of gravity.

[0051] In addition, throughout the specification, when a certain component is referred to as “comprising”, it means that the component may further include other components without excluding the other components, unless otherwise stated.

[0052] Furthermore, throughout the specification, when a “plan view” is mentioned, this means when the target portion is viewed from above, and when a “cross-sectional view” is mentioned, this means when a cross section of the target portion cut vertically is viewed from the side.

[0053] It will be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and / or portions, these elements, components, regions, layers and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or portion from another element, component, region, layer or portion. Therefore, the first element, component, region, layer or portion discussed below may be referred to as a second element, component, region, layer or portion without departing from the teachings herein.

[0054] The terms used in this article are only used for the purpose of describing specific embodiments, and are not intended to be restrictive. As used in this article, "one", "the (described)" and "at least one" do not represent the limitation of quantity, and are intended to include both the singular and the plural, unless the context clearly indicates otherwise. For example, "element" has the same meaning as "at least one element", unless the context clearly indicates otherwise. "At least one" should not be interpreted as being limited to "one". "Or" refers to "and / or". As used in this article, the term "and / or" includes any and all combinations of one or more of the related listed items. It will be further understood that when used in this specification, the term "includes" and / or "comprising" or "containing" and / or "having" indicates the presence of the described features, regions, wholes, steps, operations, elements and / or parts, but does not exclude the presence or addition of one or more other features, regions, wholes, steps, operations, elements, parts and / or their groups.

[0055] In the following, reference will be made to Figure 1 A display device according to the embodiment is described.

[0056] Figure 1 is a schematic exploded perspective view of a display device according to an embodiment.

[0057] refer to Figure 1 , the display device 1000 according to the embodiment may include a display panel DP and a housing HM.

[0058] The surface of the display panel DP on which the image is displayed is parallel to the surface defined by the first direction DR1 and the second direction DR2. The third direction DR3 indicates the normal direction of the surface on which the image is displayed, that is, the display panel DP or the first substrate SUB1 (see Figure 3 ) in the thickness direction. The front surface (or upper surface) and the rear surface (or lower surface) of each member are divided by the third direction DR3. However, the directions indicated by the first to third directions DR1, DR2, and DR3 may be converted into other directions in a relative concept.

[0059] The display panel DP may be a flat rigid display panel, but is not limited thereto and in another embodiment, the display panel DP may also be a flexible display panel. The display panel DP may be formed of an organic light emitting display panel, or may include an organic light emitting display panel. However, the type of the display panel DP is not limited thereto and may include various types of panels. For example, the display panel DP may include a liquid crystal display panel, an electrophoretic display panel, an electrowetting display panel, and the like. In addition, the display panel DP may be formed of a next generation display panel such as a micro light emitting diode display panel, a quantum dot light emitting diode display panel, and a quantum dot organic light emitting diode display panel. The micro light emitting diode display panel is formed in such a way that each pixel is composed of a light emitting diode having a size of 10 microns to 100 microns. Such a micro light emitting diode display panel has advantages such as the use of inorganic materials, the omission of backlight, a fast response speed, high brightness under low power consumption, and the ability to not break when being bent. The quantum dot light emitting diode display panel is formed by attaching a film containing quantum dots or by forming a material containing quantum dots. Quantum dots are composed of inorganic materials such as indium and cadmium, and refer to particles that emit light themselves and have a diameter of several nanometers or less. By adjusting the particle size of quantum dots, light of a desired color can be displayed.

[0060] The quantum dot organic light emitting diode display panel uses a blue organic light emitting diode as a light source, attaches a film including red and green quantum dots on the blue organic light emitting diode, or deposits a material including red and green quantum dots to realize color.

[0061] The display panel DP according to the embodiment may include other various display panels.

[0062] like Figure 1 As shown in , the display panel DP includes a display area DA displaying an image and a non-display area PA adjacent to the display area DA. The non-display area PA is an area where no image is displayed. For example, the display area DA may have a rectangular shape, and the non-display area PA may have a shape surrounding the display area DA. However, the shapes of the display area DA and the non-display area PA may be relatively designed without being limited thereto.

[0063] The housing HM provides an internal space. The display panel DP is installed inside the housing HM. In addition to the display panel DP, various electronic components such as a power supply unit, a storage device, and an audio input / output module may be installed inside the housing HM.

[0064] In the following, reference will be made to Figure 2 A display area of ​​a display panel according to an embodiment is described.

[0065] Figure 2 is a schematic cross-sectional view of a display panel according to an embodiment.

[0066] refer to Figure 2 , a plurality of pixels PA1, PA2 and PA3 may be arranged with Figure 1 The substrate SUB may be located on the display area DA corresponding to the pixel PA1, PA2, and PA3. Each of the pixels PA1, PA2, and PA3 may include a plurality of transistors and a light emitting element connected thereto. The encapsulation layer ENC may be located on the plurality of pixels PA1, PA2, and PA3.

[0067] The display area DA may be protected from external air or moisture by the encapsulation layer ENC.

[0068] The encapsulation layer ENC may be integrally provided to overlap the entire surface of the display area DA in the thickness direction of the substrate SUB, and may also be partially disposed in the non-display area PA.

[0069] The first color conversion portion CC1, the second color conversion portion CC2, and the transmissive portion CC3 may be located on the encapsulation layer ENC. In the thickness direction, the first color conversion portion CC1 may overlap the first pixel PA1, the second color conversion portion CC2 may overlap the second pixel PA2, and the transmissive portion CC3 may overlap the third pixel PA3.

[0070] Light emitted from the first pixel PA1 may pass through the first color conversion portion CC1 to provide red light LR. Light emitted from the second pixel PA2 may pass through the second color conversion portion CC2 to provide green light LG. Light emitted from the third pixel PA3 may pass through the transmission portion CC3 to provide blue light LB.

[0071] In the following, reference will be made to Figure 3 and Figure 4 The structure of the display panel according to the embodiment is described in more detail. Figure 3 and Figure 4 is a cross-sectional view of a display panel according to an embodiment.

[0072] First, refer to Figure 3 , according to the display area DA of the embodiment (for example, see Figure 1 ) includes a red light emitting area RLA, a green light emitting area GLA and a blue light emitting area BLA.

[0073] The non-emission area NLA1 may be located between the red, green, and blue light emitting areas RLA, GLA, and BLA.

[0074] Each light emitting area may correspond to a pixel. For example, the blue light emitting area BLA, the red light emitting area RLA, and the green light emitting area GLA may correspond to a blue pixel, a red pixel, and a green pixel, respectively.

[0075] The display area DA (see, for example, Figure 1 ) cross-sectional structure.

[0076] The display unit DC according to the embodiment includes a first substrate SUB1. The first substrate SUB1 may include a flexible material such as plastic that may be easily bent, folded, or rolled.

[0077] The buffer layer BF may be located on the first substrate SUB1. The buffer layer BF may include silicon nitride (SiN x ), silicon oxide (SiO x ) or silicon oxynitride (SiO x N y ).

[0078] The buffer layer BF is located between the first substrate SUB1 and the semiconductor layer ACT to block impurities from the first substrate SUB1 during a crystallization process for forming polysilicon, thereby improving the characteristics of polysilicon. Stress on the semiconductor layer ACT formed on the buffer layer BF can be relieved by planarizing the first substrate SUB1.

[0079] The semiconductor layer ACT is located on the buffer layer BF. The semiconductor layer ACT may be formed of polysilicon or an oxide semiconductor, or may include polysilicon or an oxide semiconductor. The semiconductor layer ACT includes a channel region C, a source region S, and a drain region D. The source region S and the drain region D are respectively arranged on opposite sides of the channel region C. The channel region C is an intrinsic semiconductor that is not doped with impurities, and the source region S and the drain region D are impurity semiconductors doped with conductive impurities.

[0080] The semiconductor layer ACT may be formed of or may include an oxide semiconductor, and in this case, a separate protective layer (not shown) may be added to protect the oxide semiconductor susceptible to an external environment such as a high temperature.

[0081] The gate insulating layer GI is located on the semiconductor layer ACT.

[0082] The gate insulating layer GI may include silicon nitride (SiN x ), silicon oxide (SiO x ) and silicon oxynitride (SiO x N y ) is a single layer or multiple layers of at least one of ).

[0083] The gate electrode GE is located on the gate insulating layer GI. The gate electrode GE includes one of copper (Cu), copper alloy, aluminum (Al), aluminum alloy, molybdenum (Mo), and molybdenum alloy. The gate electrode GE may be a multi-layer in which metal layers are laminated.

[0084] The interlayer insulating layer IL1 is located on the buffer layer BF, the semiconductor layer ACT, the gate electrode GE, and the gate insulating layer GI. The interlayer insulating layer IL1 may include silicon nitride (SiN x ), silicon oxide (SiO x ) or silicon oxynitride (SiO x N y ).

[0085] Openings exposing the source region S and the drain region D are defined in the interlayer insulating layer IL1 .

[0086] The source electrode SE and the drain electrode DE are located on the interlayer insulating layer IL1. The source electrode SE and the drain electrode DE are respectively connected to the source region S and the drain region D of the semiconductor layer ACT through openings defined in the interlayer insulating layer IL1.

[0087] The passivation layer IL2 is on the interlayer insulating layer IL1 , the source electrode SE, and the drain electrode DE. Since the passivation layer IL2 covers and planarizes the interlayer insulating layer IL1 , the source electrode SE, and the drain electrode DE, the first electrode E1 may be formed without a step on the passivation layer IL2 .

[0088] The passivation layer IL2 may be made of an organic material such as a polyacrylate resin or a polyimide resin, or a laminated layer of an organic material and an inorganic material.

[0089] The first electrode E1 is located on the passivation layer IL2 and is connected to the source electrode SE through the opening of the passivation layer IL2.

[0090] A driving transistor including a gate electrode GE, a semiconductor layer ACT, a source electrode SE, and a drain electrode DE is connected to the first electrode E1 to supply a driving current to the light emitting element ED.

[0091] Apart from Figure 3 and Figure 4 In addition to the driving transistor shown in the figure and a compensation transistor (not shown) connected to the driving transistor and compensating for the threshold voltage of the driving transistor in response to a scan signal, the display device according to the current embodiment may further include a switching transistor (not shown) connected to the data line and transmitting a data voltage in response to the scan signal.

[0092] The pixel defining layer PDL may be located on the passivation layer IL2 and the first electrode E1 , and the pixel defining layer PDL may define a pixel opening overlapping the first electrode E1 in a thickness direction and defining an emission area.

[0093] The pixel defining layer PDL may include an organic material such as a polyacrylate resin or a polyimide resin, or a silicon-based inorganic material.

[0094] The pixel opening may have a planar shape substantially similar to that of the first electrode E1, and may have a rhombus shape or an octagonal shape similar to the rhombus shape in a plan view (i.e., a view in the thickness direction), but is not limited thereto and may have any shape such as other quadrilateral shapes or other polygonal shapes in another embodiment.

[0095] The light emitting layer EML is located on the first electrode E1 overlapping the pixel opening in the thickness direction.

[0096] The emission layer EML may be formed of or include a low molecular weight organic material or a high molecular weight organic material such as poly(3,4-ethylenedioxythiophene) (“PEDOT”).

[0097] In addition, the light emitting layer EML may be a multilayer including one or more layers selected from a hole injection layer ("HIL"), a hole transport layer ("HTL"), an electron transport layer ("ETL"), and an electron injection layer ("EIL").

[0098] Most of the light emitting layer EML may be located within the pixel opening, and may also be located on a side surface of the pixel defining layer PDL or over the pixel defining layer PDL.

[0099] The second electrode E2 is located on the light emitting layer EML and the pixel defining layer PDL.

[0100] The second electrode E2 may be positioned across a plurality of pixels and may receive a common voltage through a common voltage transmitting unit (not shown) in the non-display area PA.

[0101] The first electrode E1 , the light emitting layer EML, and the second electrode E2 may constitute a light emitting element ED.

[0102] Here, the first electrode E1 may be an anode as a hole injection electrode, and the second electrode E2 may be a cathode as an electron injection electrode.

[0103] However, the embodiment is not necessarily limited thereto, and according to a driving method of the display device, the first electrode E1 may be used as a cathode and the second electrode E2 may be used as an anode.

[0104] Holes and electrons are injected into the light emitting layer EML from the first electrode E1 and the second electrode E2 , respectively, and when excitons generated by recombination of the injected holes and electrons transition from an excited state to a ground state, light emission occurs.

[0105] The encapsulation layer ENC is located on the second electrode E2.

[0106] The encapsulation layer ENC may cover not only the upper surface of the display layer including the light emitting element ED but also the side surface of the display layer including the light emitting element ED, thereby sealing the display layer.

[0107] Since the light emitting element ED is extremely susceptible to moisture and oxygen, the encapsulation layer ENC seals the display layer to block the inflow of external moisture and oxygen.

[0108] The encapsulation layer ENC may include a plurality of layers and may be formed of a composite layer including both inorganic and organic layers (including a first inorganic layer EIL1, an organic layer EOL, and a second inorganic layer EIL2) or may include a composite layer including both inorganic and organic layers (including a first inorganic layer EIL1, an organic layer EOL, and a second inorganic layer EIL2).

[0109] The color conversion unit CC is located on the encapsulation layer ENC.

[0110] The color conversion cell CC includes a second substrate SUB2 overlapping the first substrate SUB1 in a thickness direction.

[0111] The second substrate SUB2 may include a flexible material such as plastic that may be easily bent, folded, or rolled.

[0112] The color conversion cell CC may include a bank BK1 on the encapsulation layer ENC.

[0113] The bank BK1 may define a first opening OP1 , a second opening OP2 , and a third opening OP3 respectively overlapping the pixel opening in a thickness direction.

[0114] The sizes of the first opening OP1 , the second opening OP2 , and the third opening OP3 may be different or the same.

[0115] The first color conversion layer CCL1 may be located in the first opening OP1.

[0116] The first color conversion layer CCL1 may convert the supplied light into red light.

[0117] The first color conversion layer CCL1 may include quantum dots.

[0118] The second color converting layer CCL2 may be located in the second opening OP2.

[0119] The second color conversion layer CCL2 may convert the supplied light into green light.

[0120] The second color conversion layer CCL2 may include quantum dots.

[0121] Then, the quantum dots will be described in detail below.

[0122] In the present specification, quantum dots (also referred to as semiconductor nanocrystals) may include II-VI compounds, III-V compounds, IV-VI compounds, IV elements or compounds, I-III-VI compounds, II-III-VI compounds, I-II-IV-VI compounds, or combinations thereof.

[0123] The II-VI group compound can be selected from: a binary compound selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof; a binary compound selected from the group consisting of AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, Ternary compounds selected from the group consisting of CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof; and quaternary compounds selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof.

[0124] The Group II-VI compound may further include a Group III metal.

[0125] The III-V compounds are: binary compounds selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof; ternary compounds selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InNAs, InNSb, InPAs, InZnP, InPSb and mixtures thereof; and quaternary compounds selected from the group consisting of GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and mixtures thereof.

[0126] The Group III-V compound may further include a Group II metal (eg, InZnP).

[0127] Group IV-VI compounds are: binary compounds selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof; ternary compounds selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof; and quaternary compounds selected from the group consisting of SnPbSSe, SnPbSTe, SnPbSTe and mixtures thereof.

[0128] The Group IV element or compound is: an element selected from the group consisting of Si, Ge, and a combination thereof; and a binary compound selected from the group consisting of SiC, SiGe, and a combination thereof, but is not limited thereto.

[0129] Examples of Group I-III-VI compounds include, but are not limited to, CuInSe 2 、CuInS 2 , CuInGaSe and CuInGaS.

[0130] The II-III-VI Group compounds include, but are not limited to, ZnGaS, ZnAlS, ZnInS, ZnGaSe, ZnAlSe, ZnInSe, ZnGaTe, ZnAlTe, ZnInTe, ZnGaO, ZnAlO, ZnInO, HgGaS, HgAlS, HgInS, HgGaSe, HgAlSe, HgInSe, HgGaTe, HgAlTe, HgInTe, MgGaS, MgAlS, MgInS, MgGaSe, MgAlSe, MgInSe and combinations thereof.

[0131] The Group I-II-IV-VI compound may be selected from CuZnSnSe and CuZnSnS, but is not limited thereto.

[0132] In one embodiment, the quantum dots may not include cadmium.The quantum dots may include semiconductor nanocrystals based on Group III-V compounds including indium and phosphorus.

[0133] The III-V compound may further include zinc.The quantum dots may include semiconductor nanocrystals based on a II-VI compound including a chalcogen element (eg, sulfur, selenium, tellurium, or a combination thereof) and zinc.

[0134] In quantum dots, the above-mentioned binary compound, ternary compound and / or quaternary compound may be present in the particle at a uniform concentration, or may be present in the same particle at partially different concentration distributions.

[0135] In addition, a quantum dot can have a core / shell structure in which a shell surrounds a core. The interface between the core and the shell can have a concentration gradient in which the concentration of the element present in the shell decreases toward the center. In some embodiments, the quantum dot can have a core / shell structure comprising a core comprising the above-mentioned nanocrystal and a shell surrounding the core.

[0136] The shell of the quantum dot may serve as a protective layer for maintaining semiconductor properties by preventing chemical denaturation of the core and / or a charging layer for imparting electrophoretic properties to the quantum dot.

[0137] The shell can be single-layer or multi-layer.

[0138] Examples of shells for quantum dots include metal or non-metal oxides, semiconductor compounds, or combinations thereof.

[0139] For example, a metal or non-metal oxide may be SiO 2 、Al 2 O 3 、TiO 2 、ZnO、MnO、Mn 2 O 3 , Mn 3 O 4 , CuO, FeO, Fe 2 O 3 , Fe 3 O 4 , CoO, Co 3 O 4 and binary compounds such as NiO or MgAl 2 O 4 、CoFe 2 O 4 、NiFe 2 O 4 and CoMn 2 O 4 The present invention may be a ternary compound of the type described above, but the present invention is not limited thereto.

[0140] For example, examples of semiconductor compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, and AlSb, etc. However, the present invention is not limited thereto.

[0141] In addition, the semiconductor nanocrystal may have a structure including one semiconductor nanocrystal core and a multi-layer shell surrounding the semiconductor nanocrystal core.

[0142] In one embodiment, the multi-layer shell may have two or more layers, such as two, three, four, five or more layers.

[0143] Two adjacent layers of the shell may have a single composition or different compositions.

[0144] Each layer in a multilayer shell can have a composition that varies along the radius.

[0145] Quantum dots can have a full width at half maximum ("FWHM") of an emission wavelength spectrum of about 45 nanometers (nm) or less (preferably about 40 nm or less, and more preferably about 30 nm or less), and thus color purity or color reproducibility within this range can be effectively improved.

[0146] In addition, since light emitted by quantum dots is emitted in all directions, a wide viewing angle can be improved.

[0147] In quantum dots, the shell material and the core material can have different energy band gaps.

[0148] For example, the energy band gap of the shell material may be larger than the energy band gap of the core material.

[0149] In other embodiments, the energy band gap of the shell material can be smaller than the energy band gap of the core material. The quantum dot can have multiple layers of shells. In a multiple layer shell, the energy band gap of the outer layer can be larger than the energy band gap of the inner layer (i.e., the layer closer to the core). In a multiple layer shell, the energy band gap of the outer layer can be smaller than the energy band gap of the inner layer.

[0150] Quantum dots can control the absorption / emission wavelength by adjusting the composition and size. The maximum emission peak wavelength of quantum dots can have a wavelength range from ultraviolet to infrared wavelength or higher.

[0151] The quantum dots can have a quantum efficiency of about 10% or more (eg, about 30% or more, about 50% or more, about 60% or more, about 70% or more, about 90% or more, or even 100%).

[0152] Quantum dots can have a relatively narrow spectrum.Quantum dots can have, for example, a full width at half maximum of an emission wavelength spectrum of about 50 nm or less (e.g., about 45 nm or less, about 40 nm or less, or about 30 nm or less).

[0153] The quantum dot may have a particle size of about 1 nm or more and about 100 nm or less. The particle size refers to a diameter of a particle assuming a spherical shape or a diameter converted from a two-dimensional image obtained by a transmission electron microscope.

[0154] The quantum dots can have a size of about 1 nm to about 20 nm (e.g., 2 nm or more, 3 nm or more, or 4 nm or more and 50 nm or less, 40 nm or less, 30 nm or less, 20 nm or less, 15 nm or less, or 10 nm or less).

[0155] The shape of the quantum dot is not particularly limited. For example, the shape of the quantum dot may include, but is not limited to, a sphere, a polyhedron (eg, a pyramid, a cube or a cuboid), a multipod, a nanotube, a nanorod, a nanowire, a nanosheet or a combination thereof.

[0156] Quantum dots are commercially available or can be suitably synthesized. The particle size of quantum dots can be controlled relatively freely, and the particle size can be uniformly controlled during colloidal synthesis.

[0157] The quantum dot may include an organic ligand (eg, having a hydrophobic residue and / or a hydrophilic residue). The organic ligand residue may be bound to the surface of the quantum dot.

[0158] Organic ligands include RCOOH, RNH 2 , R 2 NH, R 3 N, RSH, R 3 PO, R 3 P, ROH, RCOOR, RPO(OH) 2 , RHPOOH, R 2 POOH or a combination thereof, wherein each R is independently a C3 to C40 substituted or unsubstituted aliphatic hydrocarbon group (e.g., a C3 to C40 (e.g., C5 or more and C24 or less) substituted or unsubstituted alkyl group or a substituted or unsubstituted alkenyl group, etc.), a C6 to C40 (e.g., C6 or more and C20 or less) substituted or unsubstituted aromatic hydrocarbon group (e.g., a C6 to C40 substituted or unsubstituted aryl group), or a combination thereof.

[0159] Examples of the organic ligand include: thiol compounds such as methyl mercaptan, ethyl mercaptan, propyl mercaptan, butyl mercaptan, pentyl mercaptan, hexyl mercaptan, octyl mercaptan, dodecanethiol, hexadecyl mercaptan, octadecyl mercaptan and benzyl mercaptan; amines such as methylamine, ethylamine, propylamine, butylamine, pentylamine, hexylamine, octylamine, nonylamine, decylamine, dodecylamine, hexadecylamine, octadecylamine, dimethylamine, diethylamine, dipropylamine, tributylamine and trioctylamine; carboxylic acid compounds such as formic acid, acetic acid, propionic acid, butyric acid, pentanoic acid, hexanoic acid, heptanoic acid, octanoic acid, dodecanoic acid, hexadecanoic acid, octadecanoic acid, oleic acid and benzoic acid; and phosphine compounds such as methylphosphine, ethylphosphine, propylphosphine, Phosphine compounds such as phosphine, butylphosphine, pentylphosphine, octylphosphine, dioctylphosphine, tributylphosphine and trioctylphosphine; phosphine compounds such as methylphosphine oxide, ethylphosphine oxide, propylphosphine oxide, butylphosphine oxide, pentylphosphine oxide, tributylphosphine oxide, octylphosphine oxide, dioctylphosphine oxide and trioctylphosphine oxide or their oxide compounds; diphenylphosphine, triphenylphosphine compounds or their oxide compounds; C5 to C20 alkylphosphinic acids such as hexylphosphinic acid, octylphosphinic acid, dodecanephosphinic acid, tetradecanephosphinic acid, hexadecanephosphinic acid and octadecanephosphinic acid and C5 to C20 alkylphosphinic acids, but not limited thereto. The quantum dot may include a single hydrophobic organic ligand, or the quantum dot may be in a mixture of one or more. The hydrophobic organic ligand may not include a photopolymerizable residue (e.g., an acrylate group or a methacrylate group).

[0160] The first insulating layer IL3 may be on the bank BK1 , the first color conversion layer CCL1 , the second color conversion layer CCL2 , and the encapsulation layer ENC.

[0161] The first insulating layer IL3 may cover the bank BK1, the first color conversion layer CCL1, and the second color conversion layer CCL2. The first insulating layer IL3 may include at least one of silicon nitride, silicon oxide, and silicon oxynitride. According to an embodiment, the first insulating layer IL3 may be omitted.

[0162] The filling layer FL may be located on the first insulating layer IL3. The filling layer FL may combine components located on the first substrate SUB1 and components located on the second substrate SUB2. A display panel may be formed by the filling layer FL. The filling layer FL may fill the third opening OP3.

[0163] Although the present specification shows an embodiment in which the filling layer FL includes a separate filler, the present invention is not limited thereto and in another embodiment, the corresponding space may be filled with air without the filling layer FL.

[0164] That is to say, Figure 3 In the embodiment, air may replace the filling layer FL.

[0165] When the corresponding space is filled with air, the refractive index of the corresponding space has the refractive index of air (about 1), and thus, the corresponding space may function as a low refractive index layer.

[0166] Thereby, the light emission efficiency can be effectively improved.

[0167] The transmission layer TL and the first spacer CS1 may be located on the filling layer FL. The transmission layer TL may overlap the third opening OP3 in the thickness direction. The transmission layer TL may be located in a portion corresponding to the blue light emitting area BLA in the space partitioned by the bank BK1.

[0168] The transmission layer TL may be formed on the second substrate SUB2 during the manufacturing process and may be coupled to the first substrate SUB1 through the filling layer FL. The transmission layer TL may have a tapered cross-section toward the first substrate SUB1. That is, the width of the transmission layer TL in a direction perpendicular to the thickness direction of the first substrate SUB1 may decrease in a direction toward the first substrate SUB1.

[0169] The transmission layer TL may include a scatterer SC. The scatterer SC may be selected from SiO 2 ,BaSO 4 、Al 2 O 3 、ZnO、ZrO 2 and TiO 2 One or more of the groups.

[0170] The transmission layer TL may include a polymer resin and a scatterer SC included in the polymer resin. For example, the transmission layer TL may include TiO 2 , but not limited to this.

[0171] The transmission layer TL may transmit light incident from the light emitting element ED.

[0172] In the display panel according to the current embodiment, the first color conversion layer CCL1 converts the incident light color into red light and emits it. In addition, the second color conversion layer CCL2 converts the incident light color into green light and emits it. However, the light incident on the transmission layer TL is transmitted through the transmission layer TL without color conversion. The incident light may include blue light. The incident light may be a single blue light or a mixture of blue light and green light. Alternatively, blue light, green light, and red light may all be included.

[0173] The color conversion cell CC according to the embodiment includes a first spacer CS1. The first spacer CS1 may maintain a gap between components in a process of combining the second substrate SUB2 and the first substrate SUB1.

[0174] The first spacer CS1 may be located between the first insulating layer IL3 and the second insulating layer IL4. The first spacer CS1 may overlap the bank BK1 and the pixel defining layer PDL in the thickness direction. The first spacer CS1 may be located at the same layer as the transmission layer TL. The first spacer CS1 may be formed in the same process as that of the transmission layer TL.

[0175] The first spacer CS1 and the transmission layer TL may include the same material. The first spacer CS1 and the transmission layer TL may include the same type of scatterer SC. The height of the first spacer CS1 and the height of the transmission layer TL may be the same.

[0176] The first spacer CS1 may have a tapered shape toward the first substrate SUB1.

[0177] When the first spacer CS1 and the transmission layer TL have a first height and a first scatterer content, the value of the first height multiplied by the first scatterer content may remain constant. The first height may be about 0.5 microns to about 10 microns (e.g., about 1 micron to about 5 microns). Assume that the first spacer CS1 and the transmission layer TL have a height of 4 microns and a scatterer content of 3 weight percent (wt%). When the first spacer CS1 and the transmission layer TL are modified to have a height of 3 microns, the first spacer CS1 and the transmission layer TL are modified to have a scatterer content of 4wt%. Here, the "height" of an object refers to the thickness of the object in the thickness direction of the first substrate SUB1.

[0178] The heights and scatterer contents of the first spacer CS1 and the transmission layer TL may vary within a range in which a value of the heights of the first spacer CS1 and the transmission layer TL multiplied by the scatterer content remains constant.

[0179] The second insulating layer IL4 may be located on the transmission layer TL, the first spacer CS1, and the filling layer FL. The second insulating layer IL4 may include, for example, silicon nitride (SiN x ), silicon oxide (SiO x ) or silicon oxynitride (SiO x N y ). In some embodiments, the second insulating layer IL4 may be omitted.

[0180] The third insulating layer IL5 may be located on the second insulating layer IL4. The third insulating layer IL5 may include, for example, an organic material or a material such as silicon nitride (SiN x ), silicon oxide (SiO x ) or silicon oxynitride (SiO x N y ) of inorganic materials.

[0181] The color conversion unit CC includes a first color filter CF1, a second color filter CF2, and a third color filter CF3 located between the second substrate SUB2 and the display unit DC.

[0182] The first color filter CF1 may overlap the transmission layer TL in a thickness direction. The first color filter CF1 transmits blue light having passed through the transmission layer TL and absorbs light of other wavelengths, thereby improving the purity of blue light emitted to the outside of the display device.

[0183] The second color filter CF2 may overlap the first color conversion layer CCL1 in a thickness direction. The second color filter CF2 transmits red light having passed through the first color conversion layer CCL1 and absorbs light of other wavelengths, thereby improving the purity of red light emitted to the outside of the display device.

[0184] The third color filter CF3 may overlap the second color conversion layer CCL2 in a thickness direction. The third color filter CF3 transmits green light having passed through the second color conversion layer CCL2 and absorbs light of other wavelengths, thereby improving the purity of green light emitted to the outside of the display device.

[0185] At least two of the third color filter CF3, the second color filter CF2, and the first color filter CF1 may overlap in the thickness direction in the non-emission area NLA1 to serve as a light blocking member. In one embodiment, at least two of the third color filter CF3, the second color filter CF2, and the first color filter CF1 may overlap with the dam BK1 in the thickness direction, and at least two of the third color filter CF3, the second color filter CF2, and the first color filter CF1 may overlap with at least one of the first spacer CS1 and the second spacer CS2 in the thickness direction.

[0186] The non-emission area NLA1 may overlap the pixel definition layer PDL of the display unit DC and the bank BK1 of the color conversion unit CC in the thickness direction. Figure 1 ) The buffer layer BF, the interlayer insulating layer IL1, the passivation layer IL2, the second electrode E2, the encapsulation layer ENC, the first insulating layer IL3, the second insulating layer IL4 and the third insulating layer IL5 extending therefrom are positioned. At least one of these may be omitted.

[0187] In addition, between the second substrate SUB2 and the display unit DC, the first color filter CF1, the second color filter CF2, and the third color filter CF3 overlap the entire surface of the non-display area PA in the thickness direction and can be continuously nested. The first color filter CF1, the second color filter CF2, and the third color filter CF3 can be used as a light blocking member for preventing the non-display area PA from being viewed.

[0188] The sealant SL according to the embodiment may be located on the first insulating layer IL3. Components located on the first substrate SUB1 and components located on the second substrate SUB2 may be coupled by the sealant SL located in the non-display area PA.

[0189] The sealant SL may overlap the second spacer CS2 located in the non-display area PA in a thickness direction. The second spacer CS2 may be located between the sealant SL and the second insulating layer IL4. The second spacer CS2 may be located at the same layer as the first spacer CS1 and the transmission layer TL.

[0190] Depending on the manufacturing process, the second spacer CS2 may be formed in the same process as that of the first spacer CS1 and the transmission layer TL. The second spacer CS2 according to the embodiment may be located between the second insulating layer IL4 and the filling layer FL. The second spacer CS2 may include the same material as that of the first spacer CS1 and the transmission layer TL, and the first spacer CS1, the transmission layer TL, and the second spacer CS2 may include, for example, the same type of scatterer SC. The second spacer CS2 may have the same height in the thickness direction as that of each of the first spacer CS1 and the transmission layer TL.

[0191] According to the embodiment, the transmission layer TL, the first spacer CS1, and the second spacer CS2 are formed through a single process, thus simplifying the manufacturing process and significantly reducing time and cost required for the manufacturing process.

[0192] After the transmission layer TL, the first spacer CS1, and the second spacer CS2 according to the embodiment are manufactured to be located on the second substrate SUB2, they may be bonded to the first substrate SUB1.

[0193] On the second substrate SUB2, color filters CF1, CF2, and CF3, a second insulating layer IL4, a third insulating layer IL5, a transmissive layer TL, a first spacer CS1, and a second spacer CS2 are formed.

[0194] The components on the second substrate SUB2 may be subjected to a sintering process at a high temperature (eg, 200 degrees Celsius (° C.) or higher), and accordingly, adhesion of edges of the transmission layer TL and the spacers CS1 and CS2 and flatness of the lower surface may be effectively improved.

[0195] In the following, reference will be made to Figure 4 A display panel according to another embodiment is described. Figure 3 The description of the same components as those described in the above will be omitted. Figure 3 The stacking structure of the display unit DC described in the embodiment is the same. Figure 4The light emitted by the light emitting element ED of the embodiment may be a mixture of blue light and green light.

[0196] The color conversion unit CC according to an embodiment may include a bank BK1 on the encapsulation layer ENC.

[0197] The bank BK1 may define first, second, and third openings OP1, OP2, and OP3 respectively overlapping the pixel opening in the thickness direction. The sizes of the first, second, and third openings OP1, OP2, and OP3 may be different or the same. The first color conversion layer CCL1 may be located in the first opening OP1.

[0198] The first color conversion layer CCL1 may convert the supplied light into red light. The first color conversion layer CCL1 may include quantum dots.

[0199] The first insulating layer IL3 may be located on the bank BK1, the first color conversion layer CCL1, and the encapsulation layer ENC. The first insulating layer IL3 may cover the bank BK1 and the first color conversion layer CCL1. The first insulating layer IL3 may include at least one of silicon nitride, silicon oxide, and silicon oxynitride. According to an embodiment, the first insulating layer IL3 may be omitted.

[0200] The filling layer FL may be located on the first insulating layer IL3. The filling layer FL may combine components located on the first substrate SUB1 and components located on the second substrate SUB2. A display panel may be formed by the filling layer FL. The filling layer FL may fill the second opening OP2 and the third opening OP3.

[0201] The first transmission layer TL1, the second transmission layer TL2, and the first spacer CS1 may be located on the filling layer FL. The first transmission layer TL1 may overlap the third opening OP3 in the thickness direction. The first transmission layer TL1 may be located in a portion corresponding to the blue light emitting area BLA in the space partitioned by the bank BK1. The first transmission layer TL1 may be formed on the second substrate SUB2 during the manufacturing process and may be coupled to the first substrate SUB1 through the filling layer FL. The first transmission layer TL1 may have a tapered cross-section toward the first substrate SUB1.

[0202] The second transmission layer TL2 may overlap the second opening OP2 in the thickness direction. The second transmission layer TL2 may be located in a portion corresponding to the green light emitting area GLA in the space partitioned by the bank BK1. The second transmission layer TL2 may be formed on the second substrate SUB2 during the manufacturing process and may be coupled to the first substrate SUB1 through the filling layer FL. The second transmission layer TL2 may have a tapered cross-section toward the first substrate SUB1.

[0203] Each of the first transmission layer TL1 and the second transmission layer TL2 may include a scatterer SC. The first transmission layer TL1 and the second transmission layer TL2 may include the same type of scatterer SC. The scatterer SC may be selected from SiO 2 ,BaSO 4 、Al 2 O 3 、ZnO、ZrO 2 and TiO 2 One or more of the groups.

[0204] In the display panel according to the current embodiment, the first color conversion layer CCL1 converts the incident light color into red light and emits it. In addition, the light incident on the second transmission layer TL2 is transmitted through the second transmission layer TL2 without color conversion. The light incident on the first transmission layer TL1 is transmitted through the first transmission layer TL1 without color conversion.

[0205] According to an embodiment, light incident on the first and second transmission layers TL1 and TL2 may be a mixture of blue light and green light. Light passing through the second transmission layer TL2 in the green light emitting area GLA passes through the third color filter CF3, and thus high-purity green light may be emitted.

[0206] The light passing through the first transmission layer TL1 in the blue light emitting area BLA passes through the first color filter CF1, and thus high-purity blue light may be emitted.

[0207] The color conversion unit CC according to the embodiment includes a first spacer CS1. The first spacer CS1 may maintain a gap between components in a process of combining the second substrate SUB2 and the first substrate SUB1. The first spacer CS1 may be located between the first insulating layer IL3 and the second insulating layer IL4. The first spacer CS1 may be located at the same layer as the first transmission layer TL1 and the second transmission layer TL2.

[0208] The first spacer CS1 may be formed in the same process as that of the first transmission layer TL1 and the second transmission layer TL2. The first spacer CS1, the first transmission layer TL1 and the second transmission layer TL2 may include the same material. The first spacer CS1, the first transmission layer TL1 and the second transmission layer TL2 may include the same type of scatterer SC. The height of the first spacer CS1 and the height of the first transmission layer TL1 and the second transmission layer TL2 may be the same. The first spacer CS1 may have a tapered shape toward the first substrate SUB1.

[0209] When the first spacer CS1 and the first transmission layer TL1 (or the second transmission layer TL2) have a first height and a first scatterer content, the value of the first height multiplied by the first scatterer content may be kept constant. The first height may be about 0.5 micrometers to about 10 micrometers (e.g., about 1 micrometer to about 5 micrometers). Assume that the first spacer CS1 and the first transmission layer TL1 have a height of 4 micrometers and a scatterer content of 3 wt%. In the case where the first spacer CS1 and the first transmission layer TL1 are modified to have a height of 3 micrometers, the first spacer CS1 and the first transmission layer TL1 may be modified to have a scatterer content of 4 wt%.

[0210] The heights and scatterer contents of the first spacer CS1 and the first transmitting layer TL1 may vary within a range in which a value of the heights of the first spacer CS1 and the first transmitting layer TL1 multiplied by the scatterer content remains constant.

[0211] The second and third insulating layers IL4 and IL5 may be sequentially positioned on the first transmitting layer TL1, the second transmitting layer TL2, the first spacer CS1, and the filling layer FL. Each of the second and third insulating layers IL4 and IL5 may include an inorganic material or an organic material.

[0212] In addition, the color conversion unit CC may include a first color filter CF1, a second color filter CF2, and a third color filter CF3 between the second substrate SUB2 and the display unit DC.

[0213] The first color filter CF1 may overlap the first transmission layer TL1 in a thickness direction. The first color filter CF1 transmits blue light having passed through the first transmission layer TL1 and absorbs light of other wavelengths, thereby improving the purity of blue light emitted to the outside of the display device.

[0214] The second color filter CF2 may overlap the first color conversion layer CCL1 in a thickness direction. The second color filter CF2 transmits red light having passed through the first color conversion layer CCL1 and absorbs light of other wavelengths, thereby improving the purity of red light emitted to the outside of the display device.

[0215] The third color filter CF3 may overlap the second transmission layer TL2 in the thickness direction. The third color filter CF3 transmits green light having passed through the second transmission layer TL2 and absorbs light of other wavelengths, thereby improving the purity of green light emitted to the outside of the display device.

[0216] The sealant SL according to the embodiment may overlap the second spacer CS2 located in the non-display area PA in the thickness direction. The second spacer CS2 may be located between the sealant SL and the second insulating layer IL4. The second spacer CS2 may be located in the same layer as the first spacer CS1, the first transmission layer TL1, and the second transmission layer TL2.

[0217] The second spacer CS2 may be formed in the same process as those of the first spacer CS1, the first transmission layer TL1, and the second transmission layer TL2, depending on a manufacturing process.

[0218] The second spacer CS2 according to the embodiment may be located between the second insulating layer IL4 and the filling layer FL. The second spacer CS2 may include the same material as that of the first spacer CS1, the first transmission layer TL1, and the second transmission layer TL2, and the first spacer CS1, the first transmission layer TL1, the second transmission layer TL2, and the second spacer CS2 may include, for example, the same type of scatterer SC. The second spacer CS2 may have the same height in the thickness direction as that of each of the first spacer CS1, the first transmission layer TL1, and the second transmission layer TL2.

[0219] According to the embodiment, since the first transmission layer TL1, the second transmission layer TL2, the first spacer CS1, and the second spacer CS2 are formed through a single process, the manufacturing process is simplified and time and cost required for the manufacturing process may be significantly reduced.

[0220] According to one embodiment, the first transmission layer TL1, the second transmission layer TL2, the first spacer CS1, and the second spacer CS2 may be combined with the first substrate SUB1 after being manufactured to be located on the second substrate SUB2.

[0221] On the second substrate SUB2, color filters CF1, CF2, and CF3, a second insulating layer IL4, a third insulating layer IL5, a first transmitting layer TL1, a second transmitting layer TL2, a first spacer CS1, and a second spacer CS2 are provided.

[0222] The components positioned on the second substrate SUB2 may perform a firing process at a high temperature (eg, 200 degrees Celsius (° C.) or higher), and thus, adhesion of edges of the transmissive layers TL1 and TL2 and the spacers CS1 and CS2 and flatness of the lower surface may be effectively improved.

[0223] In the following, reference will be made to Figure 5 A display panel according to still another embodiment is described.

[0224] with Figure 3 Descriptions of the same components as those described in will be omitted.

[0225] refer to Figure 5 , the color conversion cell CC may include a bank BK1 located on the encapsulation layer ENC.

[0226] The bank BK1 may define first, second and third openings OP1, OP2 and OP3 respectively overlapping the pixel opening in the thickness direction. The sizes of the first, second and third openings OP1, OP2 and OP3 may be different or the same, and the transmissive layer TL and the first spacer CS1 are disposed on the filling layer FL.

[0227] The transmission layer TL may overlap the third opening OP3 in the thickness direction. The transmission layer TL may be located in a portion corresponding to the blue light emitting area BLA in the space partitioned by the bank BK1. The transmission layer TL may be formed on the second substrate SUB2 during the manufacturing process and may be coupled to the first substrate SUB1 through the filling layer FL. The transmission layer TL may have a tapered cross-section toward the first substrate SUB1.

[0228] The width of the transmission layer TL may be greater than the width of the third opening OP3. For example, the transmission layer TL may have a first surface facing the display unit DC, and the first surface may have a first width W1 in a direction parallel to the main surface of the first substrate SUB1. In addition, the upper surface of the third opening OP3 facing the transmission layer TL may have a second width W2 in a direction parallel to the main surface of the first substrate SUB1. The first width W1 may be greater than the second width W2.

[0229] like Figure 5 As shown in , the transmission layer TL may overlap at least a portion of the bank BK1 defining the third opening OP3 in the thickness direction. According to an embodiment, the first surface of the transmission layer TL may be disposed on the upper surface of the bank BK1. At least a portion of the transmission layer TL may be located on the first insulating layer IL3. The first surface of the transmission layer TL may contact the first insulating layer IL3.

[0230] Although the embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements made by those skilled in the art using the basic concept of the present invention defined in the claims are also included in the scope of the present invention.

Claims

1. A display device, comprising: A substrate including a display area and a non-display area; A transistor, located on the substrate; a light emitting element electrically connected to the transistor; An encapsulation layer, located on the light-emitting element; a bank located on the encapsulation layer and defining an opening in the bank; a color conversion layer, located in the opening; a filling layer, located on the bank and the color conversion layer; as well as The transmission layer and the first spacer are arranged on the filling layer.

2. The display device according to claim 1, wherein: The openings include a first opening, a second opening and a third opening, Wherein, the color conversion layer comprises: a first color conversion layer located in the first opening and comprising quantum dots; and a second color conversion layer, located in the second opening and comprising quantum dots, The transmission layer overlaps the third opening in a thickness direction of the substrate, and the filling layer fills the third opening.

3. The display device according to claim 1, wherein: The transmission layer and the first spacer include the same type of scatterers.

4. The display device according to claim 1, wherein: The transmission layer and the first spacer have the same height in a thickness direction of the substrate.

5. The display device according to claim 1, further comprising: A second spacer, located in the non-display area; as well as a sealant overlapping the second spacer in a thickness direction of the substrate, wherein: The second spacer and the transmission layer have the same height in the thickness direction, and the second spacer and the transmission layer include the same type of scatterers.

6. A display device, comprising: A substrate including a display area and a non-display area; a transistor, located on the substrate; a light emitting element electrically connected to the transistor; An encapsulation layer, located on the light-emitting element; a bank located on the encapsulation layer and defining an opening in the bank; a color conversion layer located in the opening; a filling layer, located on the bank and the color conversion layer; as well as The first transmission layer, the second transmission layer and the first spacer are arranged on the filling layer.

7. The display device according to claim 6, wherein: The openings include a first opening, a second opening and a third opening, The color conversion layer includes a first color conversion layer located in the first opening, The second opening overlaps with the second transmission layer in the thickness direction of the substrate, The third opening overlaps the first transmission layer in the thickness direction, and The filling layer fills the second opening and the third opening.

8. The display device according to claim 7, wherein: The first transmission layer, the second transmission layer, and the first spacer have the same height in the thickness direction and include the same type of scatterers.

9. The display device according to claim 8, further comprising: A second spacer, located in the non-display area; as well as A sealant overlaps the second spacer in the thickness direction of the substrate.

10. The display device according to claim 9, wherein: The second spacer and the first spacer have the same height in the thickness direction and include the same type of scatterer.

Images