Proximity type baking hot plate structure suitable for wafer gluing pre-baking process
By setting up isolation columns and through holes on the hot disk, the wafer is placed on the isolation columns to avoid direct contact with the hot disk, the problem of unstable temperature and particle contamination in the existing contact hot disks in the drying process before the wafer is coated, and a higher precision lithography process requirement is achieved.
Patent Information
- Application Number
- CN202420469968.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-03-12
- Publication Date
- 2025-02-28
- Estimated Expiration
- 2034-03-12
AI Technical Summary
In the existing contact hot disks, the wafers are susceptible to contamination by heat disk particles and unstable heat disk temperature in the wafers in the pre-dash process, which is difficult to meet the requirements of higher precision lithography processes.
A proximity baking hot plate structure is designed. By setting an circumferentially uniform isolation column and through holes on the hot plate, the wafer is placed on the isolation column to avoid direct contact with the hot plate and ensure the stability of the hot plate temperature.
It effectively avoids the wafer being contaminated by hot disk particles, and maintains the stability of the hot disk temperature, meeting the needs of higher precision lithography processes.
Smart Images
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Abstract
Description
Technical Field
[0001] The utility model relates to a proximity type baking hot plate structure suitable for a wafer pre-baking process for gluing, and belongs to the technical field of semiconductor equipment. Background Art
[0002] In semiconductor production, wafer pre-coating baking is a key process. It is to bake the wafer coated with photoresist at a certain temperature and time to dry the film, increase the adhesion and wear resistance of the film, and promote the full volatilization of the solvent in the photoresist film, so that the photoresist reacts more fully during exposure. At the same time, pre-coating baking plays a certain role in the development speed and line width control.
[0003] The pre-baking method currently configured on the fully automatic glue coating track is to use contact hot plate baking. Specifically, the wafer is directly lowered onto the hot plate through the lifting pin, and is baked after being vacuum-adsorbed by the surface of the hot plate. The advantages are that the wafer is fully fitted to the surface of the hot plate, the heating is rapid, and the pre-baking time is short. However, the disadvantages are: 1. The back of the wafer is in contact with the hot plate and is easily contaminated by particles on the hot plate; 2. When the room temperature wafer contacts the hot plate, the temperature of the hot plate will fluctuate slightly for a short time; 3. At the moment when the hot plate vacuums and adsorbs the wafer, the airflow flows through the inside of the hot plate, and the temperature of the hot plate will also fluctuate slightly for a short time. The above defects make the contact hot plate unable to meet the requirements of higher-precision lithography processes. Utility Model Content
[0004] The technical problem to be solved by the utility model is to provide a proximity baking hot plate structure suitable for the wafer pre-bake process in view of the above-mentioned prior art. The wafer does not directly contact the hot plate, thereby preventing the wafer from being contaminated by hot plate particles and ensuring the temperature stability of the hot plate.
[0005] The technical solution adopted by the utility model to solve the above-mentioned problem is: a proximity baking hot plate structure suitable for a wafer pre-bake process, comprising a hot plate mounting frame, a hot plate mounted on the hot plate mounting frame, a plurality of circumferentially evenly distributed isolation columns are arranged on the upper surface of the hot plate, a plurality of circumferentially evenly distributed through holes are opened in the center of the hot plate, a lifting platform is below the hot plate, a plurality of circumferentially evenly distributed ejector pins are arranged on the lifting platform, the ejector pins correspond to the through holes, the ejector pins are penetrated by corresponding through holes, and the wafer is arranged on the ejector pins; the lifting platform is driven to perform lifting motion, driving the ejector pins to move synchronously along the through holes, so that the ejector pins are exposed from the hot plate or the ejector pins are lowered into the through holes.
[0006] The top ends of the isolation columns respectively exceed the upper surface of the hot plate and are located in the same plane.
[0007] The outer surface of the hot plate has an anodized layer.
[0008] Connecting plates are respectively arranged on both sides of the lifting platform, and vertically arranged lifting cylinders are respectively arranged under the connecting plates. The lifting cylinders drive the connecting plates to move up and down, thereby driving the lifting platform and the ejector pin to move synchronously.
[0009] Exhaust pipes are arranged on both sides of the hot plate.
[0010] The isolation column is an isolation ceramic column.
[0011] Compared with the prior art, the advantages of the utility model are: a proximity baking hot plate structure suitable for the wafer pre-bake process, in which the wafer is placed on an isolation column so that the wafer does not directly contact the hot plate, which not only prevents the wafer from being contaminated by hot plate particles, but also prevents the temperature of the wafer itself from affecting the temperature stability of the hot plate, thereby ensuring the temperature stability of the hot plate. BRIEF DESCRIPTION OF THE DRAWINGS
[0012] Figure 1 This is a schematic diagram of a proximity baking hot plate structure suitable for a wafer pre-bake process according to an embodiment of the utility model;
[0013] In the figure, 1 is a hot plate, 2 is a thimble, 3 is a spacer column, 4 is an exhaust duct, 5 is a connecting plate, 6 is a hot plate mounting frame, 7 is a lifting cylinder, and 8 is a lifting platform. DETAILED DESCRIPTION
[0014] The present invention will be described in further detail below in conjunction with the accompanying drawings.
[0015] like Figure 1 As shown, in this embodiment, a proximity baking hot plate structure suitable for wafer pre-bake process includes a hot plate mounting frame 6, a hot plate 1 is arranged on the hot plate mounting frame 6, and 6 circumferentially evenly distributed isolation columns 3 are arranged on the upper surface of the hot plate 1, and the tops of the isolation columns 3 are respectively 1mm higher than the upper surface of the hot plate 1, so that the tops of the 6 isolation columns 3 are in the same plane. Three circumferentially evenly distributed through holes are opened in the center of the hot plate 1, and a lifting platform 8 is arranged below the hot plate 1. Three circumferentially evenly distributed ejectors 2 are arranged on the lifting platform 8, and the ejectors 2 correspond to the through holes, and the ejectors 2 are respectively penetrated by corresponding through holes. The lifting platform 8 is driven to perform lifting motion, and the ejector 2 is driven to perform lifting motion along the through hole, so that the top of the ejector 2 can be exposed from the hot plate or the top of the ejector is lowered to the through hole. In the initial state, the top of ejector pin 2 exceeds hot plate 1, and the wafer is transferred to ejector pin 2. The lifting platform 8 drives ejector pin 2 to descend, and the ejector pin descends to the through hole, driving the wafer close to the hot plate and supported on the top of the isolation column, so that the wafer and the hot plate are arranged parallel and spaced apart. The parallel spacing between the wafer and the hot plate is 1mm, ensuring that the wafer is evenly heated.
[0016] The diameter of the isolation column is 2 mm and the height is 5 mm. The isolation column is a white micro ceramic column.
[0017] The heating plate is an aluminum heating plate, and the outer surface of the heating plate is anodized to form an anodized layer.
[0018] Connecting plates 5 are respectively arranged on both sides of the lifting platform, and vertically arranged lifting cylinders 7 are respectively arranged 5 sides below the connecting plates. The lifting cylinders drive the connecting plates to move up and down, thereby driving the lifting platform and the ejector to move synchronously.
[0019] Exhaust pipes 4 are arranged on both sides of the hot plate 1, and the solvent volatilized during baking in the photoresist film is discharged through the exhaust pipes.
[0020] The wafer of the present application is placed on an isolation column so that the wafer does not directly contact the hot plate, which not only prevents the wafer from being contaminated by hot plate particles, but also prevents the temperature of the wafer itself from affecting the temperature stability of the hot plate, thereby ensuring the temperature stability of the hot plate.
[0021] In addition to the above embodiments, the present invention also includes other implementation modes. Any technical solutions formed by equivalent transformation or equivalent replacement should fall within the protection scope of the claims of the present invention.
Claims
1. A proximity baking hot plate structure suitable for wafer pre-bake process, characterized by: The invention comprises a heat plate installation frame, on which a heat plate is arranged, a plurality of circumferentially evenly distributed isolation columns are arranged on the upper surface of the heat plate, a plurality of circumferentially evenly distributed through holes are opened in the center of the heat plate, a lifting platform is arranged below the heat plate, a plurality of circumferentially evenly distributed ejectors are arranged on the lifting platform, the ejectors correspond to the through holes, the ejectors penetrate the corresponding through holes, and wafers are arranged on the ejectors; the lifting platform is driven to perform lifting motion, and the ejectors are driven to synchronously move along the through holes, so that the ejectors are exposed from the heat plate or the ejectors are lowered into the through holes.
2. The proximity baking hot plate structure suitable for wafer pre-bake process according to claim 1, characterized in that: The top ends of the isolation columns respectively exceed the upper surface of the hot plate and are located in the same plane.
3. The proximity baking hot plate structure suitable for wafer pre-bake process according to claim 1, characterized in that: The outer surface of the hot plate has an anodized layer.
4. The proximity baking hot plate structure suitable for wafer pre-bake process according to claim 1, characterized in that: Connecting plates are respectively arranged on both sides of the lifting platform, and vertically arranged lifting cylinders are respectively arranged under the connecting plates. The lifting cylinders drive the connecting plates to move up and down, thereby driving the lifting platform and the ejector pin to move synchronously.
5. The proximity baking hot plate structure suitable for wafer pre-bake process according to claim 1, characterized in that: Exhaust pipes are arranged on both sides of the hot plate.
6. The proximity baking hot plate structure suitable for wafer pre-bake process according to claim 1, characterized in that: The isolation column is an isolation ceramic column.