High voltage resistant device

Abstract

The utility model discloses a high voltage resistant device which comprises a first chip, a second chip, an epoxy packaging body, a positive electrode and a negative electrode, an upper thinning area is formed below a positive electrode connecting part right above a negative electrode connecting part, and a lower thinning area is formed above the negative electrode connecting part. The first chip and the second chip which are distributed side by side in the horizontal direction are both located in the upper thinning area and the lower thinning area, and the positive electrode end of the first chip and the negative electrode end of the second chip are both electrically connected with the lower surface of the positive electrode connecting part through a first welding layer. The negative electrode end of the first chip and the positive electrode end of the second chip are electrically connected with the upper surface of the negative electrode connecting part through a second welding layer, and the positive electrode connecting part and the negative electrode connecting part are provided with a plurality of through holes corresponding to the first chip and the second chip respectively. According to the utility model, on the basis of improving the overall voltage bearing capability, the stability of connection between the chip and the electrodes and the tightness of the epoxy coating structure can be improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor power devices, in particular to a high-voltage resistant device. Background Art

[0002] A diode device is an electronic device that conducts current in one direction. There is a PN junction and two lead terminals inside the semiconductor diode. This electronic device has the ability to conduct current in one direction according to the direction of the applied voltage and is widely used in electronic products and communications. With the development of technology, the power of equipment is getting bigger and bigger, and the operating frequency is gradually increasing. The increase in power requires the voltage energy of the diode to increase. Existing high-voltage devices have the defect of poor heat dissipation performance while meeting the insulation and mechanical properties, resulting in poor stability of device performance during long-term use. Utility Model Content

[0003] The utility model aims to provide a high-voltage resistant device, which reduces the volume of the package, increases the heat dissipation area, and improves the stability of the connection between the chip and the electrode and the tightness of the epoxy coating structure on the basis of improving the overall voltage bearing capacity.

[0004] To achieve the above-mentioned purpose, the technical solution adopted by the utility model is: a high-voltage resistant device, comprising: a first chip, a second chip, an epoxy package, a positive electrode and a negative electrode, one end of the horizontally extending positive electrode is a positive electrode connection part, and the other end is a positive electrode pin part, one end of the horizontally extending negative electrode is a negative electrode connection part, and the other end is a negative electrode pin part, the epoxy package is coated on the outside of the first chip, the second chip, the positive electrode connection part and the negative electrode connection part, and one end of the positive electrode pin part and the negative electrode pin part, which are opposite to the positive electrode connection part and the negative electrode connection part, respectively, protrudes outward from the epoxy package;

[0005] An upper thinning area is formed below the positive electrode connection part located directly above the negative electrode connection part, and a lower thinning area is formed above the negative electrode connection part. The first chip and the second chip distributed side by side in the horizontal direction are both located in the upper thinning area and the lower thinning area. The positive terminal of the first chip and the negative terminal of the second chip are both electrically connected to the lower surface of the positive electrode connection part through a first welding layer, and the negative terminal of the first chip and the positive terminal of the second chip are both electrically connected to the upper surface of the negative electrode connection part through a second welding layer. The positive electrode connection part and the negative electrode connection part are both provided with a plurality of through holes corresponding to the first chip and the second chip, respectively.

[0006] The further improved scheme in the above technical scheme is as follows:

[0007] 1. In the above solution, at least one of the first chip and the second chip is a transient diode chip.

[0008] 2. In the above solution, a through hole is provided above and below each of the first chip and the second chip.

[0009] 3. In the above solution, the positive electrode pin portion and the negative electrode pin portion are arranged at the same height and are both located in the central area in the thickness direction of the epoxy package.

[0010] 4. In the above solution, the first welding layer and the second welding layer are both solder paste sheets.

[0011] Due to the application of the above technical solution, the utility model has the following advantages and effects compared with the prior art:

[0012] The utility model discloses a high-voltage resistant device, wherein an upper thinning area is formed below the positive electrode connection part which is located directly above the negative electrode connection part, a lower thinning area is formed above the negative electrode connection part, a first chip and a second chip which are arranged side by side in a horizontal direction are both located in the upper thinning area and the lower thinning area, a positive terminal of the first chip and a negative terminal of the second chip are both electrically connected to the lower surface of the positive electrode connection part through a first welding layer, a negative terminal of the first chip and a positive terminal of the second chip are both electrically connected to the upper surface of the negative electrode connection part through a second welding layer, a plurality of through holes which respectively correspond to the first chip and the second chip are provided on the positive electrode connection part and the negative electrode connection part, on the basis of improving the overall voltage bearing capacity, the volume of the package is reduced, the heat dissipation area is increased, the stability of the connection between the chip and the electrode and the tightness of the epoxy coating structure can also be improved, thereby improving the overall service life of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Attached Figure 1 This is a schematic diagram of the structure of the high-voltage resistant device of the utility model;

[0014] Attached Figure 2 It is a top view schematic diagram of the positive electrode in the high voltage resistant device of the utility model.

[0015] In the above figures: 1. first chip; 2. second chip; 3. epoxy package; 4. positive electrode; 41. positive electrode connection part; 42. positive electrode pin part; 5. negative electrode; 51. negative electrode connection part; 52. negative electrode pin part; 61. upper thinning area; 62. lower thinning area; 71. first welding layer; 72. second welding layer; 8. through hole. DETAILED DESCRIPTION

[0016] The utility model is further described below in conjunction with the accompanying drawings and embodiments:

[0017] Embodiment 1: A high voltage resistant device, comprising: a first chip 1, a second chip 2, an epoxy encapsulation body 3, a positive electrode 4 and a negative electrode 5, wherein one end of the horizontally extending positive electrode 4 is a positive electrode connection portion 41 and the other end is a positive electrode pin portion 42, one end of the horizontally extending negative electrode 5 is a negative electrode connection portion 51 and the other end is a negative electrode pin portion 52, the epoxy encapsulation body 3 is coated on the outside of the first chip 1, the second chip 2, the positive electrode connection portion 41 and the negative electrode connection portion 51, and one end of the positive electrode pin portion 42 and the negative electrode pin portion 52 respectively extends outward from the epoxy encapsulation body 3 away from the positive electrode connection portion 41 and the negative electrode connection portion 51;

[0018] An upper thinning area 61 is formed below the positive electrode connection part 41 located directly above the negative electrode connection part 51, and a lower thinning area 62 is formed above the negative electrode connection part 51. The first chip 1 and the second chip 2 distributed side by side in the horizontal direction are both located in the upper thinning area 61 and the lower thinning area 62. The positive terminal of the first chip 1 and the negative terminal of the second chip 2 are both electrically connected to the lower surface of the positive electrode connection part 41 through a first welding layer 71, and the negative terminal of the first chip 1 and the positive terminal of the second chip 2 are both electrically connected to the upper surface of the negative electrode connection part 51 through a second welding layer 72. The positive electrode connection part 41 and the negative electrode connection part 51 are both provided with a plurality of through holes 8 corresponding to the first chip 1 and the second chip 2, respectively.

[0019] At least one of the first chip 1 and the second chip 2 is a transient diode chip; a through hole 8 is provided on the top and the bottom of each of the first chip 1 and the second chip 2 .

[0020] Embodiment 2: A high-voltage device, comprising: a first chip 1, a second chip 2, an epoxy encapsulation body 3, a positive electrode 4 and a negative electrode 5, wherein one end of the horizontally extending positive electrode 4 is a positive electrode connection portion 41 and the other end is a positive electrode pin portion 42, one end of the horizontally extending negative electrode 5 is a negative electrode connection portion 51 and the other end is a negative electrode pin portion 52, the epoxy encapsulation body 3 is coated on the outside of the first chip 1, the second chip 2, the positive electrode connection portion 41 and the negative electrode connection portion 51, and one end of the positive electrode pin portion 42 and the negative electrode pin portion 52 respectively opposite to the positive electrode connection portion 41 and the negative electrode connection portion 51 extends outward from the epoxy encapsulation body 3;

[0021] An upper thinning area 61 is formed below the positive electrode connection part 41 located directly above the negative electrode connection part 51, and a lower thinning area 62 is formed above the negative electrode connection part 51. The first chip 1 and the second chip 2 distributed side by side in the horizontal direction are both located in the upper thinning area 61 and the lower thinning area 62. The positive terminal of the first chip 1 and the negative terminal of the second chip 2 are both electrically connected to the lower surface of the positive electrode connection part 41 through a first welding layer 71, and the negative terminal of the first chip 1 and the positive terminal of the second chip 2 are both electrically connected to the upper surface of the negative electrode connection part 51 through a second welding layer 72. The positive electrode connection part 41 and the negative electrode connection part 51 are both provided with a plurality of through holes 8 corresponding to the first chip 1 and the second chip 2, respectively.

[0022] The positive electrode lead portion 42 and the negative electrode lead portion 52 are arranged at the same height and are both located in the central area of ​​the epoxy package 3 in the thickness direction; the first welding layer 71 and the second welding layer 72 are both solder paste sheets.

[0023] When the above-mentioned high-voltage resistant device is used, it reduces the volume of the package, increases the heat dissipation area, and improves the stability of the connection between the chip and the electrode and the tightness of the epoxy coating structure on the basis of improving the overall voltage-bearing capacity, thereby improving the overall service life of the device.

[0024] The above embodiments are only for illustrating the technical concept and features of the utility model, and their purpose is to enable people familiar with the technology to understand the content of the utility model and implement it accordingly, and they cannot be used to limit the protection scope of the utility model. Any equivalent changes or modifications made according to the spirit of the utility model should be included in the protection scope of the utility model.

Claims

1. A high voltage resistant device, comprising: A first chip (1), a second chip (2), an epoxy encapsulation body (3), a positive electrode (4) and a negative electrode (5), characterized in that: one end of the horizontally extending positive electrode (4) is a positive electrode connection part (41) and the other end is a positive electrode lead part (42); one end of the horizontally extending negative electrode (5) is a negative electrode connection part (51) and the other end is a negative electrode lead part (52); the epoxy encapsulation body (3) is coated on the outside of the first chip (1), the second chip (2), the positive electrode connection part (41) and the negative electrode connection part (51); one end of the positive electrode lead part (42) and the negative electrode lead part (52) are opposite to the positive electrode connection part (41) and the negative electrode connection part (51) and extend outward from the epoxy encapsulation body (3); An upper thinning area (61) is formed below the positive electrode connection part (41) located directly above the negative electrode connection part (51), and a lower thinning area (62) is formed above the negative electrode connection part (51). The first chip (1) and the second chip (2) arranged side by side in the horizontal direction are both located in the upper thinning area (61) and the lower thinning area (62). The positive terminal of the first chip (1) and the negative terminal of the second chip (2) are both electrically connected to the lower surface of the positive electrode connection part (41) through a first welding layer (71), and the negative terminal of the first chip (1) and the positive terminal of the second chip (2) are both electrically connected to the upper surface of the negative electrode connection part (51) through a second welding layer (72). The positive electrode connection part (41) and the negative electrode connection part (51) are both provided with a plurality of through holes (8) corresponding to the first chip (1) and the second chip (2), respectively.

2. The high voltage device according to claim 1, characterized in that: At least one of the first chip (1) and the second chip (2) is a transient diode chip.

3. The high voltage device according to claim 1, characterized in that: A through hole (8) is provided on the top and bottom of each of the first chip (1) and the second chip (2).

4. The high voltage withstand device according to claim 1, characterized in that: The positive electrode pin portion (42) and the negative electrode pin portion (52) are arranged at the same height and are both located in the central area in the thickness direction of the epoxy packaging body (3).

5. The high voltage withstand device according to claim 1, characterized in that: The first welding layer (71) and the second welding layer (72) are both solder paste sheets.

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