Gold wire bonding structure for 1.6 T silicon optical module and 1.6 T silicon optical module

Abstract

The utility model relates to a gold wire bonding structure used for a 1.6 T silicon optical module. A first gold ball and a second gold ball are planted on a first RF bonding pad side by side along the width direction of the first RF bonding pad according to a predetermined interval, and a third gold ball is planted on a second RF bonding pad at a position corresponding to the second gold ball; and the non-ball-mounting area on the second RF bonding pad is welded with one end of the gold wire, and the other end of the gold wire is firstly pulled up to be welded with the first gold ball, then pulled up to be welded with the third gold ball in a non-breaking state, and finally pulled up to be welded with the second gold ball in a non-breaking state. According to the 1.6 T silicon optical module, a first RF bonding pad in a gold wire bonding structure is located on a PCB, and a second RF bonding pad in the gold wire bonding structure is located on a silicon optical chip. According to the scheme, two gold balls are planted on the first RF bonding pad and one gold ball is planted on the second RF bonding pad, so that the number of gold wires is increased from two to three, and the high-frequency performance is effectively improved.

Description

Technical Field

[0001] The utility model relates to the technical field of silicon photonic modules, and in particular to a gold wire bonding structure for a 1.6T silicon photonic module and the 1.6T silicon photonic module. Background Art

[0002] The current mainstream solution for 1.6T silicon photonic modules adopts a single-wave 200G design, with a total of 8 channels, 8×200G=1.6T. The high-speed RF line of the PCB board in the 1.6T silicon photonic module adopts a differential pair design. In order to reduce the parasitic inductance of the gold wire, a double gold wire design is used between each RF pad of the PCB board and each RF pad of the silicon photonic chip (the parasitic inductance of two gold wires is half that of one gold wire). In order to increase the bonding strength of the gold wire, a ball is planted on the RF pad of the PCB board. The two gold wires are independent and approximately parallel, such as Figure 1 and Figure 2 As shown, the smaller the parasitic inductance of the gold wire, the better. However, the size of the RF pad in the current design is generally 140um due to parasitic capacitance and other issues. The diameter of the gold wire is 25um, and the outer diameter of the gold ball bonded by the gold wire is 2 to 3 times the outer diameter of the gold wire. Therefore, the current solution can only use two gold wires for each RF pad, and the number of gold wires cannot be increased. Utility Model Content

[0003] The technical problem to be solved by the utility model is to provide a gold wire bonding structure for a 1.6T silicon photonic module and a 1.6T silicon photonic module, so as to overcome the deficiencies in the above-mentioned prior art.

[0004] The utility model solves the above-mentioned technical problem with the following technical solution: a gold wire bonding structure for a 1.6T silicon photonic module, comprising: a first RF pad and a second RF pad, on which a first gold ball and a second gold ball are planted side by side at a predetermined interval along the width direction thereof, and on which a third gold ball is planted at a position corresponding to the second gold ball on the second RF pad; an area on the second RF pad where no ball is planted is welded to one end of the gold wire, and the other end of the gold wire is first pulled up and welded to the first gold ball, then pulled up in an unbroken state and welded to the third gold ball, and finally pulled up in an unbroken state and welded to the second gold ball.

[0005] The beneficial effect of the utility model is as follows: in this scheme, by planting two gold balls on the first RF pad and one gold ball on the second RF pad, the whole has three gold balls, one more gold ball than the prior art, and then one end of the gold wire is welded to the area on the second RF pad where the balls are not planted, and the other end of the gold wire is first pulled up and welded to the first gold ball, then pulled up without being broken and welded to the third gold ball, and finally pulled up without being broken and welded to the second gold ball, presenting an "N" shaped structure, and the number of gold wires is increased from two to three, thereby effectively improving the high-frequency performance.

[0006] On the basis of the above technical solution, the present invention can also be improved as follows.

[0007] Furthermore, the outer diameters of the first gold ball, the second gold ball and the third gold ball are 2 to 3 times the outer diameter of the gold wire, the widths of the first RF pad and the second RF pad are both 140 um, and the outer diameter of the gold wire is 25 um.

[0008] Based on the above technical solution, the utility model also provides a 1.6T silicon photonic module, including: a PCB board, a silicon photonic chip and an even number of gold wire bonding structures, the first RF pad in the gold wire bonding structure is on the PCB board, and the second RF pad in the gold wire bonding structure is on the silicon photonic chip.

[0009] A further beneficial effect of the above is that the high-frequency performance of the 1.6T silicon photonic module is effectively improved by adopting the gold wire bonding structure.

[0010] Furthermore, the number of gold wire bonding structures is sixteen, and each two of them form a group. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 A structural diagram of implanting two gold balls in the RF pad of the gold wire bonding structure used in the 1.6T silicon photonic module in the prior art;

[0012] Figure 2 This is a structural diagram of a gold wire bonding structure used in a 1.6T silicon photonic module in the prior art;

[0013] Figure 3 A structural diagram showing three gold balls implanted in the gold wire bonding structure for a 1.6T silicon photonic module in the utility model;

[0014] Figure 4 This is a structural diagram of the gold wire bonding structure used for the 1.6T silicon photonic module in the present utility model;

[0015] Figure 5 It is a structural diagram of a 1.6T silicon photonic module having a gold wire bonding structure in the utility model.

[0016] In the accompanying drawings, the components represented by the reference numerals are listed as follows:

[0017] 1. Gold wire bonding structure, 110. First RF pad, 120. Second RF pad, 130. First gold ball, 140. Second gold ball, 150. Third gold ball, 160. Gold wire, 2. PCB board, 3. Silicon photonic chip. DETAILED DESCRIPTION

[0018] The principles and features of the present invention are described below in conjunction with the accompanying drawings. The examples given are only used to explain the present invention and are not used to limit the scope of the present invention.

[0019] Example 1

[0020] like Figure 3 , Figure 4 As shown, a gold wire bonding structure for a 1.6T silicon photonic module includes: a first RF pad 110 and a second RF pad 120, a first gold ball 130 and a second gold ball 140 are planted side by side at a predetermined interval along the width direction of the first RF pad 110, and a third gold ball 150 is planted on the second RF pad 120 at a position corresponding to the second gold ball 140;

[0021] The unimplanted area on the second RF pad 120 is welded to one end of the gold wire 160, and the other end of the gold wire 160 is first pulled up and welded to the first gold ball 130, then pulled up without being cut off and welded to the third gold ball 150, and finally pulled up without being cut off and welded to the second gold ball 140;

[0022] In this solution, two gold balls are planted on the first RF pad 110 and one gold ball is planted on the second RF pad 120, so that the whole has three gold balls, which is one more gold ball than the prior art. Then, one end of the gold wire 160 is welded to the unplanted area on the second RF pad 120, and the other end of the gold wire 160 is first pulled up and welded to the first gold ball 130, then pulled up without being cut off and welded to the third gold ball 150, and finally pulled up without being cut off and welded to the second gold ball 140, forming an "N" shape. The structure has the following features: the number of gold wires 160 is increased from two to three, which effectively improves the high-frequency performance. In the gold wire bonding, the area on the second RF pad 120 that has not been implanted with a ball does not need to be implanted with a ball, and cannot be implanted with a ball. In addition, in the gold wire bonding, the gold wire 160 cannot be pulled up from the second gold ball 140 and welded to the area on the second RF pad 120 that has not been implanted with a ball. In this way, two gold wires will cross each other, and in order to avoid a short circuit, it is necessary to avoid them in the height direction, which ultimately results in a very long length of the gold wire with a high curvature, which in turn reduces the high-frequency performance.

[0023] Example 2

[0024] like Figure 3 , Figure 4 As shown, this embodiment is a further improvement on the basis of embodiment 1, and the details are as follows:

[0025] The outer diameters of the first gold ball 130, the second gold ball 140 and the third gold ball 150 are 2 to 3 times the outer diameter of the gold wire 160. The widths of the first RF pad 110 and the second RF pad 120 are both 140um, and the outer diameter of the gold wire 160 is 25um. That is, the first RF pad 110 can only implant two gold balls at most. Theoretically, the second RF pad 120 can also implant two gold balls at most. However, in actual application, the second RF pad 120 only implants one gold ball.

[0026] Example 3

[0027] like Figure 5 As shown, a 1.6T silicon photonic module includes: a PCB board 2, a silicon photonic chip 3 and an even number of gold wire bonding structures 1, the first RF pad 110 in the gold wire bonding structure 1 is located on the PCB board 2, and the second RF pad 120 in the gold wire bonding structure 1 is located on the silicon photonic chip 3. By adopting the gold wire bonding structure 1, the high-frequency performance of the 1.6T silicon photonic module is effectively improved. In this embodiment: the number of gold wire bonding structures 1 is sixteen, and each two are in a group.

[0028] Although the embodiments of the present invention have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations of the present invention. Ordinary technicians in the field can change, modify, replace and modify the above embodiments within the scope of the present invention.

Claims

1. A gold wire bonding structure for a 1.6T silicon photonic module, characterized in that: include: A first RF soldering pad (110) and a second RF soldering pad (120), wherein a first gold ball (130) and a second gold ball (140) are planted side by side at a predetermined interval along the width direction of the first RF soldering pad (110), and a third gold ball (150) is planted on the second RF soldering pad (120) at a position corresponding to the second gold ball (140); an area on the second RF soldering pad (120) where no balls are planted is welded to one end of a gold wire (160), and the other end of the gold wire (160) is first pulled up to weld to the first gold ball (130), then pulled up in an unbroken state to weld to the third gold ball (150), and finally pulled up in an unbroken state to weld to the second gold ball (140).

2. A gold wire bonding structure for a 1.6T silicon photonic module according to claim 1, characterized in that: The outer diameters of the first gold ball (130), the second gold ball (140) and the third gold ball (150) are 2 to 3 times the outer diameter of the gold wire (160), the widths of the first RF pad (110) and the second RF pad (120) are both 140um, and the outer diameter of the gold wire (160) is 25um.

3. A 1.6T silicon photonic module, characterized in that: include: A PCB board (2), a silicon photonic chip (3), and an even number of gold wire bonding structures (1) as claimed in claim 1 or 2, wherein the first RF pad (110) in the gold wire bonding structure (1) is located on the PCB board (2), and the second RF pad (120) in the gold wire bonding structure (1) is located on the silicon photonic chip (3).

4. According to claim 3, a 1.6T silicon photonic module is characterized in that: The number of the gold wire bonding structures (1) is sixteen, and each two of them form a group.

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