Gas path system and coating device

Abstract

A gas circuit system comprises a vacuum pump, a first gas pipe, a second gas pipe, a first gas inlet pipeline and a first gas outlet pipeline. The first air pipe extends to form a closed ring shape and is provided with a plurality of air holes. The outlet end of the first air inlet pipeline is connected with a first air pipe, and the inlet end is connected with an air source. The inlet end of the first exhaust pipeline communicates with the space defined by the first air pipe. The second air pipe surrounds the first air pipe and is spaced from the first air pipe, and a coating area is formed between the first air pipe and the second air pipe. The second air pipe is provided with a plurality of air holes. And the second gas pipe is used for introducing process gas into the coating area or vacuumizing the coating area through the plurality of gas holes. The utility model further provides a coating device comprising the gas path system. The structural layout of the gas path system is improved and designed, so that the uniformity of the special gas received by the silicon wafers at different positions can be guaranteed, and the difference of coating process effects caused by the difference of the positions of the silicon wafers is avoided.

Description

Technical Field

[0001] The present application relates to the field of photovoltaic material processing, and more specifically to a gas path system and a coating device including the gas path system. Background Art

[0002] Many common process flows in the manufacturing industry, such as coating processes, usually require the introduction of special gases into a closed chamber for reaction. "Special gases" are special gases that meet specific purposes, including single gases or mixed gases. Under certain conditions, special gases enter the chamber along a certain air intake route to participate in the reaction and meet the processing requirements. Different production processes have different requirements for parameters such as the air intake route of special gases. Taking the manufacturing process of solar cells as an example, during the coating process, the uniformity of the distribution of special gases used in the process on the surface of the silicon wafer is an important process parameter. However, in the gas path design of the existing structure, the distribution uniformity of the gas in the chamber is poor, resulting in a thicker coating thickness on the silicon wafers close to the air inlet and a thinner coating thickness on the silicon wafers far from the air inlet, which in turn leads to poor uniformity in the thickness of the coating. Utility Model Content

[0003] In view of this, the present application provides a gas circuit system, which can make the gas diffusion more uniform, and the gas circuit system includes:

[0004] Vacuum pump;

[0005] A first air tube, the first air tube extends into a closed ring shape, and the first air tube is provided with a plurality of air holes;

[0006] a first air inlet pipeline and a first air exhaust pipeline, wherein the outlet end of the first air inlet pipeline is connected to the first air pipe, the inlet end of the first air inlet pipeline is used to connect to an air source, the outlet end of the first exhaust pipeline is connected to the vacuum pump, and the inlet end of the first exhaust pipeline is connected to a space surrounded by the first air pipe;

[0007] The second air pipe surrounds the first air pipe and is spaced apart from the first air pipe, a coating area is formed between the first air pipe and the second air pipe, the second air pipe is provided with a plurality of air holes, and the second air pipe is used to introduce process gas into the coating area through the plurality of air holes or to evacuate the coating area.

[0008] By improving the structural layout of the gas path system, the area surrounded by the first gas pipe is integrated as a vacuum port. At the same time, the first gas pipe itself has the function of ejecting gas, and the second gas pipe surrounding the first gas pipe has the functions of ejecting gas and extracting gas. In this way, the first gas pipe located in the center and the second gas pipes located around it alternately take in and extract gas, which can ensure the uniformity of the special gas received by the silicon wafers at different positions, and will not cause differences in the coating process effect due to the different positions of the silicon wafers.

[0009] In some embodiments, the gas circuit system further includes:

[0010] a second air inlet pipeline, wherein the second air pipe is connected to the air source through the second air inlet pipeline,

[0011] A second exhaust pipeline, wherein the second air pipe is connected to the vacuum pump through the second exhaust pipeline.

[0012] In some embodiments, a first air intake valve is disposed on the first air intake pipe;

[0013] The first exhaust pipe is provided with a first vacuum valve;

[0014] The second air intake pipe is provided with a second air intake valve;

[0015] The second exhaust pipe is provided with a second vacuum valve.

[0016] In some embodiments, a common air pipe is connected between the second air intake pipe and the second air exhaust pipe, and the common air pipe is arranged between the second air intake valve and the second vacuum valve.

[0017] In some embodiments, the gas circuit system further includes a flow meter, wherein an inlet end of the flow meter is connected to the gas source, and an outlet end branch is connected to the first air intake pipe and the second air intake pipe.

[0018] In some embodiments, the number of the second air intake pipes is at least two, and at least two of the second air intake pipes are connected to the second air pipe at intervals; the number of the second exhaust pipes is at least two, and at least two of the second exhaust pipes are connected to the second air pipe at intervals.

[0019] In some embodiments, the second air pipe extends into a closed ring and includes a plurality of pipes connected end to end in sequence, and a plurality of air holes of the second air pipe are opened on the tube wall of the second air pipe.

[0020] The present application also provides a coating device, comprising:

[0021] chamber; and

[0022] In the above-mentioned air circuit system, the first air pipe and the second air pipe are arranged in the chamber, and the vacuum pump is arranged outside the chamber.

[0023] In some embodiments, the first air tube and the second air tube are both disposed on the cavity wall of the chamber;

[0024] A vacuum port is provided on the cavity wall of the chamber, one side of the vacuum port is connected to the first exhaust pipe, and the other side of the vacuum port is arranged toward the space surrounded by the first air pipe.

[0025] In some embodiments, at least two gas circuit systems are disposed in the chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 It is a schematic plan view of a coating device according to an embodiment of the present application.

[0027] Figure 2 It is a three-dimensional schematic diagram of the first air pipe of an embodiment of the present application.

[0028] Figure 3 for Figure 1 Working status of the coating device Figure 1 .

[0029] Figure 4 for Figure 1 Working status of the coating device Figure 2 .

[0030] Description of main component symbols:

[0031] 200, coating device; 110, chamber; 100, gas system; 10, first gas pipe; 20, second gas pipe; 30, first air inlet pipe; 40, second air inlet pipe; 50, gas source; 60, vacuum pump; 70, first exhaust pipe; 80, second exhaust pipe; 90, flow meter; 101, vacuum port; 13A, air hole; 13B, air hole; 31A, first air inlet valve; 31B, second air inlet valve; 71A, first vacuum valve; 71B, second vacuum valve; 81, common gas pipe; 310, silicon wafer; 300, carrier; 111, cavity wall; 21, exhaust pipe; 22, air inlet pipe; 23, pillar. DETAILED DESCRIPTION

[0032] The gas circuit system of the present application can promote the diffusion of gas in the flow and improve the uniformity of special gases through the two-way action (intake and exhaust). The structural setting of the gas circuit system of the present application can ensure the uniformity of special gases received by silicon wafers at different positions through the exchange of the first central air pipe and the surrounding air pipes to perform air intake and exhaust, and will not produce differences in the coating process effect due to the different positions of the silicon wafers.

[0033] See also Figure 1 The coating device 200 of the embodiment of the present application includes a closed chamber 110 and a gas circuit system 100. The gas circuit system 100 includes a first gas pipe 10, a second gas pipe 20, and a vacuum pump 60. The first gas pipe 10 and the second gas pipe 20 are both arranged in the closed chamber 110. The vacuum pump 60 is arranged outside the chamber 110. The chamber 110 is usually a vacuum chamber, and the chamber 110 needs to be evacuated during coating.

[0034] The first air pipe 10 is provided with a plurality of air holes 13A arranged at intervals. The second air pipe 20 surrounds the first air pipe 10 and is arranged at intervals from the first air pipe 10. The second air pipe 20 is provided with a plurality of air holes 13B arranged at intervals. The area surrounded by the second air pipe 20 is used to place a carrier, which is used to carry products to be coated, such as silicon wafers. The area between the first air pipe 10 and the second air pipe 20 is a coating area, and the products to be coated on the carrier are located between the first air pipe 10 and the second air pipe 20.

[0035] The first air pipe 10 can be arranged in the middle position of the chamber 110, such as the middle of the top wall of the chamber 110, the middle position of the bottom wall, or the middle position of the three-dimensional space, but it is not limited thereto, and the specific position can be designed according to the needs. In the embodiment of the present application, the first air pipe 10 extends into a closed ring, such as a square ring, a circular ring, an elliptical ring, etc. A plurality of air holes 13A are opened on the tube wall of the first air pipe 10, so that the gas entering the first air pipe 10 can be discharged through the air holes 13A. A vacuum port 101 is provided at the position surrounded by the first air pipe 10, so that the gas can be drawn out of the chamber from the vacuum port 101. In some embodiments, a plurality of air holes 13A are evenly arranged in the first air pipe 10 along the extension direction of the first air pipe 10. The vacuum port 101 can be connected to the vacuum pump 60 through a pipeline. The first air pipe 10 is connected to the gas source 50 through a pipeline. It can be understood that in some embodiments, the coating device 200 includes a gas source 50. In other embodiments, the coating device 200 does not include the gas source 50, and the gas source 50 connected to the gas system 100 is an external device.

[0036] The second air pipe 20 may be disposed on the wall of the chamber 110. Figure 1 As shown, a gas source 50 is disposed outside the chamber 110. The second gas pipe 20 is connected to the gas source 50 and the vacuum pump 60 through pipelines.

[0037] In the embodiment of the present application, the first air pipe 10 is a spray air pipe, which can be designed to be pressurized so that the gas entering the first air pipe 10 is ejected from the air holes 13A at a faster speed, similar to the effect of spraying.

[0038] In the embodiment of the present application, the second air pipe 20 extends into a closed ring shape, which can be formed by connecting multiple pipes end to end in sequence by welding. A plurality of air holes 13B are provided on the wall of the second air pipe 20. In some embodiments, the plurality of air holes 13B are arranged at equal intervals along the extension direction of the second air pipe 20. The second air pipe 20 can be used to pass process gas or evacuate.

[0039] In the present application, the pipelines of the air circuit system 100 include a first air intake pipeline 30, a second air intake pipeline 40, a first exhaust pipeline 70 and a second exhaust pipeline 80. The first air intake pipeline 30 includes an inlet end and an outlet end, wherein the inlet end is connected to the air source 50, and the outlet end is connected to the first air pipe 10. The second air intake pipeline 40 includes an inlet end and an outlet end, wherein the inlet end is connected to the air source 50, and the outlet end is connected to the second air pipe 20. That is, a portion of the first air intake pipeline 30 is located outside the chamber 110, and a portion is located inside the chamber 110; a portion of the second air intake pipeline 40 is located outside the chamber 110, and a portion is located inside the chamber 110. The first air intake pipeline 30 and the second air intake pipeline 40 can respectively pass through the cavity wall of the chamber 110 to connect the inside and outside of the chamber 110. Figure 1 As shown, the first exhaust duct 70 includes an inlet end and an outlet end, the outlet end of which is connected to the vacuum pump 60, and the inlet end is connected to the space surrounded by the first air pipe 10. The second exhaust duct 80 includes an inlet end and an outlet end, the outlet end of which is connected to the vacuum pump 60, and the inlet end is connected to the second air pipe 20. That is, a portion of the first exhaust duct 70 is located outside the chamber 110, and a portion is located inside the chamber 110; a portion of the second exhaust duct 80 is located outside the chamber 110, and a portion is located inside the chamber 110. The first exhaust duct 70 and the second exhaust duct 80 can pass through the cavity wall of the chamber 110 to connect the inside and outside of the chamber 110.

[0040] See also Figure 2 , the first air pipe 10 is arranged on the cavity wall 111 of the chamber, the exhaust pipe 21 extends from outside the chamber through the cavity wall 111 into the chamber, the vacuum port 101 is defined by the exhaust pipe 21, and the pipe mouth of the exhaust pipe 21 is aligned with the position surrounded by the first air pipe 10 (the position of the vacuum port 101). That is, the cavity wall 111 of the chamber is provided with a vacuum port 101, one side of the vacuum port 101 is connected to the first exhaust pipe 70, and the other side of the vacuum port 101 is arranged toward the space surrounded by the first air pipe 10. In addition, the first air pipe 10 is also directly connected to the air intake pipe 22. The exhaust pipe 21 can be regarded as a part of the first exhaust pipe 70, and the air intake pipe 22 can be regarded as a part of the first air intake pipe 30. In the embodiment of the present application, the inner diameter of the pipe opening of the exhaust pipe 21 (the diameter of the vacuum port 101) is smaller than the inner diameter of the ring surrounded by the first air pipe 10, and on this basis, the pipe opening of the exhaust pipe 21 is designed to be larger as much as possible, so as to better extract the gas in the chamber 110. Figure 2As shown, the diameter of the air extraction pipe 21 is significantly larger than the diameter of the air intake pipe 22. In the embodiment of the present application, the first air pipe 10 is fixed to the cavity wall 111 by a plurality of struts 23.

[0041] like Figure 1 As shown, the first air intake pipeline 30 and the second air intake pipeline 40 are respectively connected to the air source 50. The first air intake pipeline 30 is provided with a first air intake valve 31A, and the setting of the first air intake valve 31A controls whether the gas from the air source 50 enters the first air intake pipeline 30. The second air intake pipeline 40 is provided with a second air intake valve 31B, and the setting of the second air intake valve 31B controls whether the gas from the air source 50 enters the second air intake pipeline 40. In this way, the gas pipeline from the air source 50 is branched into at least two air intake pipelines, and the gas can enter the corresponding air intake pipeline only when the air intake valve on the corresponding air intake pipeline is open.

[0042] like Figure 1 As shown, the first exhaust pipe 70 is provided with a first vacuum valve 71A, and by closing and opening the first vacuum valve 71A, it is possible to control whether the gas inside the chamber 110 is pumped out through the first exhaust pipe 70. The second exhaust pipe 80 is provided with a second vacuum valve 71B, and by closing and opening the second vacuum valve 71B, it is possible to control whether the gas inside the chamber 110 is pumped out through the first exhaust pipe 70.

[0043] To facilitate the opening and closing of the valves, all the first air inlet valves 31A and the first vacuum valves 71A are arranged outside the chamber 110. All the first air inlet valves 31A, the second air inlet valves 31B, the first vacuum valves 71A and the second vacuum valves 71B may be electric valves or pneumatic valves.

[0044] In this way, the second air pipes 20 located at the periphery can serve as both an exhaust port and a vacuum port, and the first air pipe 10 at the middle position is integrated with the vacuum port 101 defined by it, so that when the first air pipe 10 at the middle position is in the process of exhausting air, the second air pipes 20 at the periphery take in air, and when the first air pipe 10 in the middle is exhausting air, the second air pipes 20 at the periphery exhaust air, so as to achieve uniform coating of the silicon wafers arranged in the chamber 110.

[0045] like Figure 1As shown, the gas circuit system 100 also includes a flow meter 90. The flow meter 90 is located outside the chamber 110. The inlet end of the flow meter 90 is connected to the gas source (50), and the outlet end branch is connected to the first air inlet pipeline 30 and the second air inlet pipeline 40. The flow meter 90 is connected between the gas source 50 and the first air inlet pipeline 30, and between the gas source 50 and the second air inlet pipeline 40. The flow meter 90 is used to control the gas flow entering the chamber 110. The flow meter 90 is an instrument for accurately measuring the gas flow, and its measured value is not inaccurate due to fluctuations in temperature or pressure. The gas source 50 includes at least one gas, usually a mixture of multiple gases for reaction.

[0046] In the present application, since the second air pipe 20 has a relatively large extension length, the number of second air intake pipes 40 and second exhaust pipes 80 connected to the second air pipe 20 can be increased accordingly to better ensure the uniformity of the gas entering the chamber 110 and the uniformity of the exhaust gas. In the present application, the number of second air intake pipes 40 is at least two, and the number of second exhaust pipes 80 is at least two. Figure 1 As shown, in the embodiment of the present application, the number of second intake ducts 40 is two, the number of second exhaust ducts 80 is two, and the positions where the two second intake ducts 40 are connected to the second air pipe 20 are as far away from each other as possible, for example, the two second intake ducts 40 are connected to the opposite sides of the second air pipe 20, so that the intake is more uniform; the positions where the two second exhaust ducts 80 are connected to the second air pipe 20 are as far away from each other as possible, for example, the two second exhaust ducts 80 are connected to the opposite sides of the second air pipe 20, so that the exhaust is more uniform.

[0047] It can be understood that when the number of second air intake ducts 40 is more than two, the more than two second air intake ducts 40 can be connected to the second air pipe 20 at equal intervals; when the number of second air exhaust ducts 80 is more than two, the more than two second air exhaust ducts 80 can be connected to the second air pipe 20 at equal intervals. In the present application, the number of second air intake ducts 40 is equal to the number of second air exhaust ducts 80. Figure 1As shown, each second air intake pipe 40 corresponds to a second exhaust pipe 80, and each pair of second air intake pipes 40 and second exhaust pipes 80 are roughly connected to opposite ends of one side of the second air pipe 20. A common air pipe 81 is also connected between each pair of second air intake pipes 40 and second exhaust pipes 80. The common air pipe 81 is arranged between the second air intake valve 31B of the second air intake pipe 40 and the second vacuum valve 71B of the second exhaust pipe 80. In this way, when the second air intake valve 31B of the second air intake pipe 40 is in an open state and the second vacuum valve 71B of the second exhaust pipe 80 is in a closed state, the gas from the air source 50 not only enters the second air pipe 20 through the second air intake pipe 40, but also enters the second air pipe 20 through the common air pipe 81 and the local second exhaust pipe 80 connected to the common air pipe 81. When the second air intake valve 31B of the second air intake duct 40 is in a closed state and the second vacuum valve 71B of the second exhaust duct 80 is in an open state, the gas inside the cavity is not only extracted through the second exhaust duct 80, but also through the common air pipe 81 and the local second air intake duct 40 connected to the common air pipe 81.

[0048] like Figure 1 As shown, in the embodiment of the present application, the second intake duct 40 and the second exhaust duct 80 are respectively connected to opposite sides of the second air pipe 20 .

[0049] The following will introduce the operating principle of the coating device and the gas system 100. Figure 3 and Figure 4 . The embodiment of the present application will be described by taking sixteen silicon wafers 310 arranged in a matrix on a carrier 300 as an example. The coating process includes a first process cycle stage and a second process cycle stage. Step 1: Push the carrier 300 (or tray) on which the sixteen silicon wafers 310 are placed into the chamber 110, and place the carrier 300 roughly at a position surrounded by the second air pipe 20, and the silicon wafers 310 on the carrier 300 are located in the area between the first air pipe 10 and the second air pipe 20. Step 2: Open the second air inlet valve 31B on the second air inlet pipe 40, and close the first air inlet valve 31A on the first air inlet pipe 30, so that the special gas in the gas source 50 enters the second air pipe 20 through the second air inlet pipe 40, and is discharged onto the silicon wafer 310 and the carrier 300 through the air hole 13B on the second air pipe 20, as shown in FIG. Figure 3As shown, the direction of the arrow represents the direction of the airflow. Step 3: Open the first vacuum valve 71A on the first exhaust pipe 70, and close the second vacuum valve 71B on the second exhaust pipe 80, so that the gas inside the chamber 110 is pumped out of the chamber 110 from the vacuum port 101 through the first exhaust pipe 70 by the vacuum pump 60. In this way, while the special gas is introduced into the chamber 110 through the second air pipe 20, the gas reacts and deposits on the silicon wafer 310, and at the same time, the gas is pumped out through the vacuum port 101 in the center of the first air pipe 10, and the reaction is carried out for a certain period of time to complete the first process cycle stage. In the first process cycle stage, the special gas is released from all around the carrier 300 and the silicon wafer 310, and the gas is pumped away in the middle position between the carrier 300 and the silicon wafer 310.

[0050] Step 4: Open the first air intake valve 31A on the first air intake pipe 30, and close the second air intake valve 31B on the second air intake pipe 40; at the same time, open the first vacuum valve 71A on the second exhaust pipe 80, and close the first vacuum valve 71A on the first exhaust pipe 70. In this way, the special gas is introduced into the chamber 110 through the first air pipe 10 to make the gas react and deposit on the silicon wafer 310, and at the same time, the gas is pumped out through the second air pipe 20. Figure 4 As shown, the arrow direction represents the direction of the gas flow. The reaction is carried out for a certain period of time to complete the second process cycle stage. In the second process cycle stage, the special gas is released from the center of the carrier 300 and the silicon wafer 310, and the gas is drawn away around the carrier 300 and the silicon wafer 310.

[0051] After the second process cycle stage is completed, if the coating meets the process requirements, the coating can be stopped and the carrier 300 can be moved out of the chamber 110. If the coating does not meet the process requirements, the first process cycle stage and the second process cycle stage can be continued alternately until the coating meets the process requirements.

[0052] It is understandable that the arrangement of the gas circuit system 100 in the coating chamber 110 is not limited to Figure 1 As shown. When the coating chamber 110 has a relatively large space and multiple carriers 300 can be placed in the chamber 110, multiple silicon wafers 310 are placed on each carrier 300. At this time, the number of gas circuit systems 100 can be increased accordingly as needed. A gas circuit system 100 can be set for each carrier 300, and each carrier 300 is located in the area between the first gas pipe 10 and the second gas pipe 20 of the gas circuit system 100. When multiple carriers 300 are arranged in an array in the chamber 110, the first gas pipe 10 and the second gas pipe 20 in the corresponding multiple gas circuit systems 100 are also arranged in an array.

[0053] The present application improves the design through the structural layout of the gas circuit system 100, so that the vacuum port 101 is integrated in the middle position around the first gas pipe 10, and it has the function of ejecting gas. At the same time, the second gas pipe 20 around the first gas pipe 10 has the functions of ejecting gas and being evacuated. In this way, the first gas pipe 10 located in the middle and the second gas pipe 20 located on the periphery alternately take in and evacuate gas, which can ensure the uniformity of the special gas received by the silicon wafers 310 at different positions, and will not produce differences in the coating process effect due to the different positions of the silicon wafers 310.

[0054] Compared to the conventional method of using only flow equalizer tubes or only flow equalizer plates to improve gas uniformity, the bidirectional integration method of the present application avoids both the poor airflow uniformity of the tube and the complex and high cost of the plate structure. Compared to the conventional all-around air intake and middle air extraction, the bidirectional integration of the first air pipe 10 and the second air pipe 20 of the present application can make the gas distribution more uniform, thereby obtaining a more uniform coating, while the gas utilization efficiency is higher, saving energy consumption. Compared to the form of setting flow equalizer tubes all around, the gas path system 100 of the present application is more flexible and easier to maintain.

[0055] The above implementation modes are only used to illustrate the technical solutions of the present application and are not intended to limit the present application. Although the present application has been described in detail with reference to the above preferred implementation modes, a person skilled in the art should understand that the technical solutions of the present application may be modified or replaced by equivalents without departing from the spirit and scope of the technical solutions of the present application.

Claims

1. A gas circuit system, characterized in that: include: Vacuum pump; A first air tube, the first air tube extends into a closed ring shape, and the first air tube is provided with a plurality of air holes; a first air inlet pipeline and a first air exhaust pipeline, wherein the outlet end of the first air inlet pipeline is connected to the first air pipe, the inlet end of the first air inlet pipeline is used to connect to an air source, the outlet end of the first exhaust pipeline is connected to the vacuum pump, and the inlet end of the first exhaust pipeline is connected to a space surrounded by the first air pipe; The second air pipe surrounds the first air pipe and is spaced apart from the first air pipe, a coating area is formed between the first air pipe and the second air pipe, the second air pipe is provided with a plurality of air holes, and the second air pipe is used to introduce process gas into the coating area through the plurality of air holes or to evacuate the coating area.

2. The gas circuit system according to claim 1, characterized in that: Also includes: a second air inlet pipeline, wherein the second air pipe is connected to the air source through the second air inlet pipeline, A second exhaust pipeline, wherein the second air pipe is connected to the vacuum pump through the second exhaust pipeline.

3. The gas circuit system according to claim 2, characterized in that: The first air intake pipe is provided with a first air intake valve; the first air exhaust pipe is provided with a first vacuum valve; The second air intake pipe is provided with a second air intake valve; The second exhaust pipe is provided with a second vacuum valve.

4. The gas circuit system according to claim 3, characterized in that: A common air pipe is connected between the second air intake pipe and the second air exhaust pipe, and the common air pipe is arranged between the second air intake valve and the second vacuum valve.

5. The gas circuit system according to claim 3, characterized in that: The gas circuit system further includes a flow meter, the inlet end of the flow meter is connected to the gas source, and the outlet end branch is connected to the first air intake pipeline and the second air intake pipeline.

6. The gas circuit system according to claim 2, characterized in that: The number of the second air intake pipes is at least two, and at least two of the second air intake pipes are connected to the second air pipe at intervals; the number of the second exhaust pipes is at least two, and at least two of the second exhaust pipes are connected to the second air pipe at intervals.

7. The gas circuit system according to claim 1, characterized in that: The second air pipe extends into a closed ring shape and includes a plurality of pipes connected end to end in sequence. The plurality of air holes of the second air pipe are opened on the pipe wall of the second air pipe.

8. A coating device, characterized in that: include: Chamber; According to the gas circuit system as described in any one of claims 1 to 7, the first gas pipe and the second gas pipe are arranged in the chamber, and the vacuum pump is arranged outside the chamber.

9. The coating device according to claim 8, characterized in that: The first air pipe and the second air pipe are both arranged on the cavity wall of the cavity; A vacuum port is provided on the cavity wall of the chamber, one side of the vacuum port is connected to the first exhaust pipe, and the other side of the vacuum port is arranged toward the space surrounded by the first air pipe.

10. The coating device according to claim 8, characterized in that: At least two gas circuit systems are arranged in the chamber.

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