Diamond growth base station

Abstract

The utility model relates to the technical field of chemical vapor deposition growth, in particular to a diamond growth base station. A diamond growth base station comprises a cooling supporting table, the upper surface of the cooling supporting table is a supporting face, the diamond growth base station further comprises a heat conduction plate used for being attached to and covering the supporting face of the cooling supporting table, the heat conduction plate and the cooling supporting table are independently arranged in a split mode, and the upper surface of the heat conduction plate is used for supporting a deposition table. Therefore, when impurities are deposited on the heat-conducting plate in the using process or the surface is damaged in the cleaning operation process, the heat-conducting plate can be independently detached for maintenance and cleaning or directly replaced, later cleaning and maintenance are convenient, the cost is reduced by independently replacing the heat-conducting plate, and manpower, material resources and financial resources are integrally saved.

Description

Technical Field

[0001] The utility model relates to the technical field of chemical vapor deposition growth, in particular to a diamond growth base. Background Art

[0002] Diamond has extremely excellent physical and chemical properties and has received widespread attention and application in many fields. Microwave plasma chemical vapor deposition (MPCVD) has become the preferred method for preparing high-quality single-crystalline diamond due to its advantages such as electrodeless discharge, high energy conversion efficiency, and pure plasma. However, since the growth of high-quality single-crystalline diamond requires a special growth environment, higher requirements are placed on the functions of MPCVD equipment.

[0003] During the growth process, the single crystal diamond sheet is placed on a molybdenum deposition table, which includes a substrate table and a molybdenum ring. A cooling support table is arranged under the deposition table. The substrate table conducts heat with the cooling support table to reasonably control the temperature of the single crystal diamond sheet. The temperature during the growth of single crystal diamond has a significant impact on the quality and efficiency of the synthesis. Therefore, it is particularly important to reasonably control the temperature of the synthesis reaction process for the efficient preparation of high-quality single crystal diamond.

[0004] The utility model patent with authorization announcement number CN216514120U discloses a substrate table for preparing diamond films based on the MPCVD method. The substrate table and the molybdenum tray are placed on a water-cooled copper table (i.e., a cooling support table). The water-cooled copper table is assembled on the entire device. During use, impurities are inevitably deposited on the water-cooled copper table. The staff may also cause surface damage during the cleaning operation. However, it is inconvenient to disassemble and repair the copper table, and the overall replacement cost after damage is high, which consumes manpower, material and financial resources. Utility Model Content

[0005] The utility model aims to provide a diamond growth base, which is used to solve the problem that the water-cooled copper base of the existing diamond growth base is inconvenient to be removed from the whole device for cleaning, and the surface is easily damaged when cleaning directly in the device, and the overall replacement cost is high after damage.

[0006] The diamond growth base of the utility model adopts the following technical scheme: a diamond growth base, including a cooling support platform, the upper surface of the cooling support platform is a supporting surface, the diamond growth base also includes a heat conducting plate for fitting and covering the supporting surface of the cooling support platform, the heat conducting plate and the cooling support platform are separately and independently arranged, and the upper surface of the heat conducting plate is used to support the deposition platform.

[0007] Furthermore, the heat conducting plate is a split structure, and the heat conducting plate includes an outer ring plate and an inner circular plate, the inner circular plate is adapted to the inner hole of the outer ring plate, and the upper surface of the inner circular plate is used to support the deposition table.

[0008] Furthermore, a clearance annular groove is provided at a position near the edge of the bottom of the inner circular plate to generate a gap between the inner circular plate and the cooling support platform.

[0009] Furthermore, the radially inner groove bottom depth of the clearance ring groove is smaller than the radially outer groove bottom depth.

[0010] Furthermore, the clearance annular groove is a stepped annular groove.

[0011] Furthermore, a boss is provided on the top of the inner circular plate corresponding to the position of the supporting substrate stage.

[0012] Furthermore, a positioning structure for positioning the deposition table so as to keep it at a center position is provided on the inner circular plate.

[0013] Furthermore, the positioning structure is a positioning ring groove used for positioning and cooperating with the circumferential surface of the molybdenum ring.

[0014] Furthermore, the heat conducting plate is a copper plate.

[0015] Furthermore, the cooling support platform is a copper platform.

[0016] The diamond growth base of the utility model is a diamond growth base of a new design. The beneficial effects of the diamond growth base of the utility model are as follows: the diamond growth base comprises a cooling support platform and a heat conducting plate, the heat conducting plate is placed above the cooling support platform, the two are separate and independent, and the upper surface of the heat conducting plate is used to support the deposition platform, so that when impurities are deposited on the heat conducting plate during use or surface damage is caused during the cleaning operation, the heat conducting plate can be removed separately for maintenance and cleaning or directly replaced, which is convenient for later cleaning and maintenance, and replacing the heat conducting plate separately reduces costs, saving manpower, material and financial resources as a whole. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 This is a schematic structural diagram of an embodiment of the diamond growth base of the utility model when in use;

[0018] Figure 2 It is a structural schematic diagram of a first embodiment of the inner circular plate;

[0019] Figure 3 It is a structural schematic diagram of a second embodiment of the inner circular plate;

[0020] Figure 4 It is a structural schematic diagram of a third embodiment of the inner circular plate;

[0021] Figure 5 This is an axonometric view of an embodiment of the diamond growth base of the present utility model when in use.

[0022] In the figure: 1, cooling support platform; 2, copper tube; 3, outer ring plate; 4, inner circular plate; 5, substrate platform; 6, molybdenum ring; 7, single crystal diamond; 8, plasma ball; 41, single ring groove; 42, stepped ring groove; 43, boss; 44, positioning ring groove. DETAILED DESCRIPTION

[0023] The features and performance of the present invention are further described in detail below in conjunction with the embodiments.

[0024] First, the technical solution of the utility model is generally described as follows:

[0025] During the growth process, the single crystal diamond sheet is placed on a deposition table made of molybdenum. The deposition table includes a substrate table and a molybdenum ring. The upper surface of the substrate table is provided with multiple seed crystal growth areas. Before diamond growth, each diamond seed crystal is placed in the corresponding seed crystal growth area. Since the seed crystal temperature of the single crystal diamond sheet needs to be maintained within a certain temperature and temperature difference range during the growth process, a cooling support table is generally provided under the deposition table. The substrate table conducts heat conduction with the cooling support table to reasonably control the temperature of the single crystal diamond sheet.

[0026] The utility model is based on the prior art that the cooling support platform is generally a water-cooled copper platform, and the water-cooled copper platform is then assembled on the device. During use, impurities are inevitably deposited on the water-cooled copper platform, and the surface may be damaged during the cleaning operation by the staff. The entire water-cooled copper platform is inconvenient to disassemble and repair, and the overall replacement cost after damage is high. A diamond growth base is designed, and the following technical scheme is specifically adopted: the diamond growth base includes a cooling support platform and a heat conduction plate, the upper surface of the cooling support platform is the supporting surface, the heat conduction plate is fitted and covered on the supporting surface of the cooling support platform, the upper surface of the heat conduction plate is used to support the deposition platform, and the heat conduction plate is placed above the cooling support platform, and the two are separately arranged. In this way, when impurities are deposited on the heat conduction plate during use, it is convenient to disassemble the heat conduction plate separately for cleaning and maintenance, and when the surface is damaged during operation, the heat conduction plate can be replaced separately, which is convenient for cleaning and maintenance, and replacing the heat conduction plate separately reduces the cost.

[0027] Specific embodiments of the diamond growth base of the utility model:

[0028] The structural schematic diagram of the diamond growth base of the utility model is as follows Figure 1 and 5As shown, a diamond growth base comprises a cooling support platform 1, wherein the cooling support platform 1 has a cooling channel, and two copper tubes 2 are connected to the bottom of the cooling support platform 1, wherein the copper tubes 2 are respectively water inlets and water outlets passing into the cooling channel, and are used to provide liquid cooling water to the cooling support platform 1, and the upper surface of the cooling support platform 1 is a supporting surface, and the diamond growth base also comprises a heat conducting plate, and the outer peripheral size of the heat conducting plate is consistent with the outer peripheral size of the cooling support platform 1, or the outer peripheral size of the heat conducting plate is slightly larger than the outer peripheral size of the cooling support platform 1, and the heat conducting plate is fitted and covered on the supporting surface of the cooling support platform 1, so that the heat conducting plate and the cooling support platform 1 are separated and independent, and then the deposition platform is supported by the upper surface of the heat conducting plate, and when seed crystals or impurities are deposited on the heat conducting plate, the heat conducting plate can be removed separately for cleaning, which is convenient to use and operate, and when the surface of the heat conducting plate is damaged during the cleaning operation of the staff, the heat conducting plate can be replaced separately, thereby saving costs.

[0029] If the heat conducting plate adopts an integrated circular plate corresponding to the size of the cooling support platform 1, it is easy to use and disassemble. However, due to the large size of the integrated circular plate, the rigidity is poor, and it is easy to deform when heated, resulting in the situation that the middle is concave and the outside is warped, thereby affecting the cooling effect. Therefore, preferably, the heat conducting plate is a split structure, and the heat conducting plate includes an outer ring plate 3 and an inner circular plate 4. The inner circular plate 4 is adapted to the inner hole of the outer ring plate 3, and the upper surface of the inner circular plate 4 is used to support the deposition platform. The outer ring plate 3 is a hollow ring plate that is not easy to deform when heated, and has high structural strength. The smaller size of the inner circular plate 4 improves rigidity and has strong resistance to deformation. The heat conducting plate is a split structure, which can ensure that the structural rigidity is stronger when heated, which is convenient for keeping the seed crystal within the required temperature and temperature difference range under specific process conditions, and ensuring the synthesis quality and efficiency of the single crystal diamond 7. Of course, in other embodiments, the outer ring plate 3 can also be a ring plate with multiple apertures adapted to improve the resistance to deformation.

[0030] The inner circular plate 4 can be a complete circular plate with a smooth structure, and the upper and lower surfaces are completely in contact with the substrate stage 5 and the cooling support table 1 respectively. However, since the plasma ball 8 is located above the substrate stage 5, the shape of the plasma ball 8 is ellipsoidal. This shape determines that the temperature of the single crystal diamond 7 located at the edge of the substrate stage 5 is lower than the temperature in the middle. Therefore, in order to ensure that the temperature difference between the middle and the edge of the substrate stage 5 is as small as possible, in this embodiment, the structure of the inner circular plate 4 is optimized.

[0031] Specifically, a clearance ring groove is provided at the bottom of the inner circular plate 4 near the edge, and a gap is formed between the edge of the inner circular plate 4 and the cooling support platform 1 through the clearance ring groove to reduce edge heat dissipation, for example Figure 2As shown, a single annular groove 41 can be provided at the bottom edge of the inner circular plate 4 so that there is an annular space between the edge of the inner circular plate 4 and the cooling support platform 1, thereby reducing the contact area between the edge of the inner circular plate 4 and the cooling support platform 1, thereby reducing the cooling of the edge position of the substrate stage 5, so as to achieve uniform temperature of the substrate stage 5 and the single crystal diamond 7.

[0032] Since the temperature of the single crystal diamond 7 at the edge of the substrate stage 5 is gradually higher than the temperature in the middle portion, in this embodiment, preferably, the radially inner groove bottom depth of the gap ring groove is smaller than the radially outer groove bottom depth, so that the groove depth of the gap ring groove of the inner circular plate 4 is smaller near the middle position than the groove depth near the edge position, so that the heat dissipation effect at the gap ring groove is further reduced from near the middle position to near the edge position, which has a better temperature uniformity effect on the substrate stage 5 and the single crystal diamond 7.

[0033] Specifically, Figure 3 As shown, the gap ring groove is set as a stepped ring groove 42, so that the depth of the groove bottom of the stepped ring groove 42 near the radial direction is less than the depth of the groove bottom near the radial direction. Such stepped ring groove 42 is easy to manufacture and can be evenly distributed in the radial direction, thereby ensuring a better uniform effect on the substrate stage 5 and the single crystal diamond 7. Of course, in other embodiments, a sloped ring groove with a sloped surface structure may also be used, and the depth of the groove bottom of the sloped ring groove near the radial direction gradually decreases toward the depth of the groove bottom near the radial direction.

[0034] Under certain synthesis processes, the overall temperature of the single crystal diamond 7 is relatively high. In order to achieve a better heat dissipation effect, such as Figure 4 As shown, a boss 43 is provided on the top of the inner circular plate 4 corresponding to the position of supporting the substrate stage 5, so that the thickness of the substrate stage 5 above the boss 43 can be reduced, thereby improving the heat dissipation capacity, achieving a cooling effect on the single crystal diamond 7, and meeting the temperature conditions required by the production process.

[0035] In the prior art, the substrate table 5 and the molybdenum ring 6 of a general deposition table are manually placed on the cooling support table 1, and in order to ensure uniform deposition of the seed crystal, it is best to align the deposition table with the center position and place it on the cooling support table 1. Therefore, in order to more conveniently position and place the substrate table 5, preferably, a positioning structure for positioning the deposition table so that it remains in the center position is provided on the inner circular plate 4, thereby ensuring that the substrate table 5 is more stable, ensuring uniform deposition of the seed crystal, and making the reliability of diamond growth higher.

[0036] In order to improve the positioning effect and ensure that the deposition table can be stably arranged on the inner circular plate 4, preferably, the positioning structure is set as a positioning ring groove 44, and the positioning ring groove 44 is used to cooperate with the circumference of the molybdenum ring 6. After the molybdenum ring 6 and the positioning ring groove 44 are assembled, the substrate stage 5 in the molybdenum ring 6 can ensure a stable effect. Of course, in other embodiments, an outer convex ring can also be set on the inner circular plate 4, and the substrate stage 5 and the molybdenum ring 6 are assembled into the outer convex ring, and the outer circumference of the molybdenum ring 6 cooperates with the outer convex ring to ensure its stable effect. Or a stopper corresponding to the position of the outer circumference of the molybdenum ring 6 is set on the inner circular plate 4 to achieve a positioning effect.

[0037] In this embodiment, in order to improve the heat dissipation effect and ensure the good structural strength of the growth base, preferably, the heat conducting plate and the cooling support platform 1 are copper plates and copper platforms. Copper materials are not easily deformed by heat, have low cost, and have good heat conduction effect. Of course, in other embodiments, the heat conducting plate and the cooling support platform 1 can also be made of stainless steel or aluminum.

[0038] Through the above description of the specific embodiment of the diamond growth base of the utility model, it can be seen that the diamond growth base of the utility model includes a cooling support platform and a heat conducting plate, and the heat conducting plate is placed above the cooling support platform so that the two are separated and independent, and then the deposition platform is supported by the upper surface of the heat conducting plate, so that when impurities are deposited on the heat conducting plate during use or the surface is damaged during operation, the heat conducting plate can be maintained and cleaned separately or directly replaced, which is convenient for later cleaning and maintenance, and replacing the heat conducting plate separately reduces costs, saving manpower, material and financial resources as a whole.

[0039] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. The patent protection scope of the present invention shall be based on the claims. All equivalent structural changes made using the description and drawings of the present invention shall be included in the protection scope of the present invention.

Claims

1. A diamond growth base, comprising a cooling support platform, the upper surface of the cooling support platform being a support surface, characterized in that: The diamond growth base also includes a heat conducting plate for fitting and covering the support surface of the cooling support platform. The heat conducting plate and the cooling support platform are independently arranged, and the upper surface of the heat conducting plate is used to support the deposition platform.

2. The diamond growth base according to claim 1, characterized in that: The heat conducting plate is a split structure, and comprises an outer ring plate and an inner circular plate, the inner circular plate is adapted to the inner hole of the outer ring plate, and the upper surface of the inner circular plate is used to support the deposition table.

3. The diamond growth base according to claim 2, characterized in that: A clearance ring groove is arranged at a position near the edge of the bottom of the inner circular plate to generate a gap between the inner circular plate and the cooling support platform.

4. The diamond growth base according to claim 3, characterized in that: The groove bottom depth of the clearance ring groove on the inner side in the radial direction is smaller than the groove bottom depth on the outer side in the radial direction.

5. The diamond growth base according to claim 4, characterized in that: The clearance annular groove is a stepped annular groove.

6. The diamond growth base according to claim 2, characterized in that: The top of the inner circular plate is provided with a boss corresponding to the position of the supporting substrate stage.

7. The diamond growth base according to any one of claims 2 to 6, characterized in that: The inner circular plate is provided with a positioning structure for positioning the deposition table so as to keep it at a central position.

8. The diamond growth base according to claim 7, characterized in that: The positioning structure is a positioning ring groove used for positioning and cooperating with the circumferential surface of the molybdenum ring.

9. The diamond growth base according to any one of claims 2 to 6, characterized in that: The heat conducting plate is a copper plate.

10. The diamond growth base according to any one of claims 2 to 6, characterized in that: The cooling support platform is a copper platform.

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