Semiconductor laser

Abstract

The embodiment of the utility model provides a semiconductor laser. The semiconductor laser comprises a base; the optical fiber chipset is arranged above the base; the circuit board is vertically arranged above the base and is close to the first side surface of the optical fiber chipset, and the circuit board is connected with the optical fiber chipset through a photodiode assembly; the collimator is arranged above the base and close to the second side face of the optical fiber chip set, the collimator is parallel to the base, and a first photodiode is arranged on the side, away from the base, of the collimator. According to the utility model, the photodiode is arranged in the semiconductor laser, and if the semiconductor laser is abnormal or the optical path is abnormal, the current generated by the photodiode is greatly changed, so that the abnormal condition of the semiconductor laser or the optical path is detected; and determining an abnormal position in the semiconductor laser according to the different photodiodes with the current abnormal change condition.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor laser packaging, in particular to a semiconductor laser. Background Art

[0002] High-power semiconductor lasers have the advantages of small size, high efficiency, and long life. They are increasingly used in industrial processing, optoelectronic countermeasures and other fields. High-power semiconductor lasers are the main pump sources for fiber lasers and solid-state lasers, and are also the main components of direct semiconductor lasers. Due to the application of direct semiconductor lasers in industrial processing and the demand for high-power fiber lasers, higher requirements are placed on the output power, working stability and reliability of semiconductor lasers. However, semiconductor lasers may fail. The reason for the failure may be that the light that is not coupled into the optical fiber in the bare fiber coupling irradiates the glue, causing the collimator to fail. It may also be that the irregular operation during transportation, storage, and use causes the deformation of the base and induces the change of the optical path, causing the collimator to burn. This will affect the output power of the semiconductor laser, and it is not easy to locate the abnormal position after the semiconductor laser is packaged. Utility Model Content

[0003] The embodiment of the utility model provides a semiconductor laser. By arranging a photodiode in the semiconductor laser, the abnormality of the semiconductor laser can be effectively monitored, and the abnormal position in the semiconductor laser can be located.

[0004] In one aspect, the utility model provides a semiconductor laser, comprising:

[0005] Base;

[0006] An optical fiber chipset, wherein the optical fiber chipset is arranged above the base;

[0007] A circuit board, the circuit board is vertically arranged above the base and close to the first side of the optical fiber chipset, and the circuit board is connected to the optical fiber chipset through a photodiode assembly;

[0008] A collimator is arranged above the base and close to the second side of the optical fiber chipset. A first photodiode is arranged on a side of the collimator that is parallel to the base and away from the base.

[0009] In some possible embodiments, the optical fiber chipset includes a plurality of light emitting devices arranged in an array, and the photodiode assembly includes a plurality of second photodiodes, the number of which is the same as the number of the light emitting devices arranged in an array.

[0010] In some possible embodiments, the plurality of second photodiodes are arranged with a common cathode.

[0011] In some possible embodiments, the circuit board includes an aerial plug structure, and the anodes corresponding to each of the plurality of second photodiodes are respectively connected to the aerial plug structure through different wires.

[0012] In some possible embodiments, the positive and negative electrodes of the first photodiode are connected to the aerial plug structure through wires.

[0013] In some possible embodiments, the light emitting device includes:

[0014] A light emitting chip, wherein the light emitting chip is used to generate light;

[0015] An optical path collimation module, which is used to collimate the light generated by the light output chip;

[0016] A light path steering module, wherein the light path steering module is used to change the direction of the collimated light.

[0017] In some possible embodiments, the plurality of second photodiodes and the first photodiode are all surface mount photodiodes.

[0018] In some possible embodiments, other areas of the circuit board except the photodiode component are coated with a light absorbing coating.

[0019] In some possible embodiments, the semiconductor laser further includes a third photodiode, and the third photodiode is attached to a side surface of the collimator that is perpendicular to the base.

[0020] In some possible embodiments, the semiconductor laser further includes a fourth photodiode, and the fourth photodiode is located inside the collimator.

[0021] The embodiment of the utility model provides a semiconductor laser, including: a base; an optical fiber chipset, the optical fiber chipset is arranged above the base; a circuit board, the circuit board is arranged vertically above the base and close to the first side of the optical fiber chipset, and the circuit board is connected to the optical fiber chipset through a photodiode assembly; a collimator, the collimator is arranged above the base and close to the second side of the optical fiber chipset, and the collimator is parallel to the base and is arranged on a side away from the base. The utility model arranges a photodiode inside the semiconductor laser. If the semiconductor laser is abnormal or the optical path is abnormal, the current generated by the photodiode will change significantly, so as to detect the abnormal situation of the semiconductor laser or the optical path, and determine the abnormal position in the semiconductor laser according to the different photodiodes with current changes. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0023] Figure 1 A schematic diagram of the structure of a semiconductor laser provided by an embodiment of the utility model;

[0024] Figure 2 A top view of an embodiment of a semiconductor laser provided by an embodiment of the utility model;

[0025] Figure 3 A schematic diagram of an embodiment of a circuit board and a photodiode assembly provided in an embodiment of the utility model. DETAILED DESCRIPTION

[0026] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the utility model.

[0027] In the description of the present utility model, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present utility model. In addition, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present utility model, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.

[0028] In the description of the present utility model, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or mutual communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present utility model can be understood according to specific circumstances.

[0029] In the present utility model, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0030] The disclosure below provides many different embodiments or examples for realizing different structures of the utility model. In order to simplify the disclosure of the utility model, the components and settings of specific examples are described below. Of course, they are merely examples, and the purpose is not to limit the utility model. In addition, the utility model may repeat reference numbers and / or reference letters in different examples, and such repetition is for the purpose of simplification and clarity, and does not itself indicate the relationship between the various embodiments and / or settings discussed. In addition, the utility model provides various specific examples of processes and materials, but those of ordinary skill in the art may be aware of the application of other processes and / or the use of other materials.

[0031] For details, please refer to Figure 1 A schematic diagram of the structure of a semiconductor laser provided by the present utility model. Figure 1 As shown, the semiconductor laser provided by the utility model may include:

[0032] Base 10;

[0033] The optical fiber chipset 20 is disposed above the base 10;

[0034] A circuit board 30, the circuit board 30 is vertically disposed above the base 10 and close to the first side of the optical fiber chipset 20, and the circuit board 30 is connected to the optical fiber chipset 20 through a photodiode assembly 40;

[0035] The collimator 50 is disposed above the base 10 and close to the second side surface of the optical fiber chipset 20 . The collimator 50 is parallel to the base 10 and a first photodiode 60 is disposed on a side of the collimator 50 away from the base 10 .

[0036] like Figure 2 As shown, it is a top view of an embodiment of a semiconductor laser provided by an embodiment of the utility model. Figure 1 and Figure 2 The structure of the semiconductor laser disclosed in the utility model is described in detail. Please refer to Figure 1 and Figure 2 The base 10 is mainly used to carry the optical fiber chipset 20, the circuit board 30, the collimator 50 and other structures in the semiconductor laser. The optical fiber chipset 20 is arranged on the base, and mainly generates different light rays; the collimator 50 is also arranged on the base 10, and is mainly used to couple the various light rays generated by the optical fiber chipset 20, and collimate the coupled light rays. The semiconductor laser provided by the embodiment of the utility model also includes a circuit board 30 and a photodiode assembly 40. The photodiode assembly 30 is arranged between the circuit board 30 and the optical fiber chipset 20, and is used to connect the circuit board 30 and the optical fiber chipset 20.

[0037] In an embodiment of the utility model, the optical fiber chipset 20 may further include a plurality of light emitting devices 201 arranged in an array, and the photodiode assembly 40 includes a plurality of second photodiodes 401, the number of the plurality of second photodiodes 401 is the same as the number of the light emitting devices 201 arranged in an array, and one second photodiode 401 is connected to one light emitting device 201. In an embodiment of the utility model, the light emitting device may further include: a light emitting chip, mainly used to generate light; an optical path collimation module, mainly used to collimate the light generated by the light emitting chip; and an optical path steering module, mainly used to change the direction of the collimated light. Due to the waveguide structure of the semiconductor laser, the laser emitted by the light emitting chip is usually elliptical, and its vertical divergence angle is relatively large, and the beam quality is good, which is called the "fast axis", and the horizontal divergence angle is relatively small, and the beam quality is poor, which is called the "slow axis". In order to obtain a good coupling effect, it is necessary to collimate the light beams in two directions respectively, so the optical path collimation module can include a fast axis collimation module and a slow axis collimation module. The second photodiode 401 is disposed on the side of the light emitting chip of the light emitting device and is connected to the light emitting device. Figure 1 and Figure 2 1 and 10. The first side of the optical fiber chipset 20 (or optical device) is shown in FIG.

[0038] The semiconductor laser provided by the utility model further comprises a circuit board 30. Figure 2Taking the angle shown in the figure as an example, the circuit board 30 is arranged on the rear cavity surface of the optical fiber chipset 20, that is, the circuit board 30 is arranged close to the first side surface of the optical fiber chipset 20; the optical fiber chipset 20 is connected to the circuit board 30 through the photodiode assembly 40. Figure 3 FIG. 1 is a schematic diagram of an embodiment of a circuit board and a photodiode assembly provided by an embodiment of the utility model. Figure 3 In the figure, the photodiode assembly 40 includes a plurality of second photodiodes 401, each second photodiode 401 is respectively connected to a light emitting device 201, and the other end of each second photodiode 401 extends to the circuit board 30; that is, the second photodiodes in the photodiode assembly 40 are routed through the newly added circuit board 30.

[0039] At the same time, in the utility model, the circuit board also includes an aviation plug structure 301, which is usually located at the edge of the circuit board. The aviation plug structure mainly plays the role of connecting or disconnecting the circuit. The positive and negative electrodes of the multiple second photodiodes in the photodiode assembly are arranged in the aviation plug structure, and the multiple second photodiodes share a common negative electrode. The positive electrodes corresponding to the multiple second photodiodes are respectively connected to the aviation plug structure through different wires. This arrangement can effectively reduce the number of wiring, and reduce the welding steps and difficulty during wiring. It should be noted that in Figure 1 In the embodiment, the position of the aviation plug structure is located on the side of the circuit board 30 away from the optical fiber chipset 20, and Figure 2 In the embodiment shown, the aviation plug structure is located on the side of the circuit board 30 close to the optical fiber chipset 20. In the embodiment of the utility model, the aviation plug structure can be located at the edge of the circuit board, whether close to the optical fiber chipset or away from the optical fiber chipset.

[0040] In the embodiment of the present invention, the back cavity surface of the optical fiber chipset 20 (or the light emitting device) is a high-reflection coating, not a total reflection coating; therefore, when the optical fiber chipset 20 is working normally and emitting light normally, the back cavity surface of the optical fiber chipset will transmit part of the light, and the transmitted part of the light will be detected by the photodiode component set at the back cavity surface of the optical fiber chipset 20 and converted into current; that is, the photodiode component in the present invention will continue to generate current. However, if the optical fiber chipset is working normally or the optical path is not abnormal, then the current generated by the photodiode component 40 is usually stable, or fluctuates within a reasonable range; and if the optical fiber chipset 20 is abnormal or the optical path is abnormal, the light transmitted from the back cavity surface of the optical fiber chipset will also change, so the current generated by the photodiode component 40 will also fluctuate greatly. Therefore, in the embodiment of the present invention, if it is detected that the current generated by the photodiode component 40 has fluctuated greatly, it can be determined that the optical fiber chipset 20 has an abnormality or the optical path has changed. And because the photodiode assembly 40 includes multiple second photodiodes 401, and the multiple second photodiodes 401 are respectively connected to different light emitting devices; therefore, by judging the light emitting device connected to the second photodiode where the current fluctuates greatly, it is possible to determine which light emitting device is abnormal or the optical path of the light emitting device is abnormal, that is, not only can it be determined that the optical fiber chipset is abnormal, but also it can be located which light emitting device in the optical fiber chipset has the abnormality.

[0041] In the embodiment of the utility model, after the photodiode assembly is connected to the optical fiber chipset, wiring is also performed through the circuit board. This arrangement enables the current generated by the photodiode to be detected through the wiring on the circuit board after the entire semiconductor laser is packaged. The newly added circuit board is equivalent to providing a detection interface for the packaged semiconductor laser, so there is no need to disassemble the semiconductor laser for current detection, which improves the efficiency and convenience of current detection.

[0042] by Figure 1Taking the angle shown as an example, the semiconductor laser disclosed in the utility model also includes a collimator 50, which is usually packaged independently of the optical fiber chipset; the collimator 50 is arranged on the left or right side of the optical fiber chipset, and multiple light rays can be injected into the collimator 50 for coupling and collimation after being turned inside the optical fiber chipset 20. A first photodiode 60 is also attached above the collimator, and the positive and negative electrodes of the first photodiode 60 are connected to the aviation plug structure through a wire. When the collimator is working, if the collimator is abnormal or the optical path at the collimator is abnormal, the current generated by the first photodiode 60 will also fluctuate greatly; therefore, by monitoring whether the current generated by the first photodiode 60 fluctuates greatly, it can be determined whether the collimator is abnormal or whether the light at the collimator is abnormal. In other embodiments, the semiconductor laser may also include a third photodiode, which may be attached to the side of the collimator perpendicular to the base. In other embodiments, the semiconductor laser may also include a fourth photodiode, which may be packaged inside the collimator.

[0043] Since the positive and negative electrodes of the second photodiode in the photodiode assembly are connected to the aviation plug structure, the positive and negative electrodes of the first photodiode are also connected to the aviation plug structure; therefore, when the semiconductor laser is working, the current conditions of the first photodiode and the second photodiode in the photodiode assembly can be monitored simultaneously through the aviation plug structure, so as to simultaneously monitor the abnormal conditions of the collimator and the optical fiber chipset, ensure the safe and stable operation of the semiconductor laser, and locate and troubleshoot problems during the operation of the semiconductor laser.

[0044] In the embodiment of the utility model, the photodiode assembly is attached to the circuit board, and the wiring design is carried out through the circuit board; and the other areas of the circuit board except the photodiode and its related wiring can be coated with a light-absorbing coating. This is because in the actual working scene of the semiconductor laser, the light generated by the light-emitting chip may contain other stray light or scattered light. The light-absorbing coating can absorb these stray light and scattered light, avoid the stray light or scattered light affecting the current size of the photodiode, and improve the accuracy of the semiconductor laser abnormality detection. The multiple second photodiodes and the first photodiode in the embodiment of the utility model can be the same type of chip diodes.

[0045] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0046] A semiconductor laser provided in an embodiment of the utility model is introduced in detail above. Specific examples are used in this article to illustrate the principle and implementation mode of the utility model. The description of the above embodiments is only used to help understand the technical solution and core idea of ​​the utility model. Ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some of the technical features therein with equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the utility model.

Claims

1. A semiconductor laser, characterized in that: The semiconductor laser comprises: Base; An optical fiber chipset, wherein the optical fiber chipset is arranged above the base; A circuit board, the circuit board is vertically arranged above the base and close to the first side of the optical fiber chipset, and the circuit board is connected to the optical fiber chipset through a photodiode assembly; A collimator is arranged above the base and close to the second side of the optical fiber chipset. A first photodiode is arranged on a side of the collimator that is parallel to the base and away from the base.

2. The semiconductor laser according to claim 1, characterized in that The optical fiber chipset includes a plurality of light emitting devices arranged in an array, and the photodiode assembly includes a plurality of second photodiodes, the number of which is the same as the number of the light emitting devices arranged in an array.

3. The semiconductor laser according to claim 2, characterized in that The plurality of second photodiodes are arranged with a common cathode.

4. The semiconductor laser according to claim 2, characterized in that The circuit board comprises an aerial plug structure, and the positive electrodes corresponding to the plurality of second photodiodes are respectively connected to the aerial plug structure through different wires.

5. The semiconductor laser according to claim 4, characterized in that The positive and negative electrodes of the first photodiode are connected to the aerial plug structure through wires.

6. The semiconductor laser according to claim 2, characterized in that The light emitting device includes: A light emitting chip, wherein the light emitting chip is used to generate light; An optical path collimation module, which is used to collimate the light generated by the light output chip; A light path steering module, wherein the light path steering module is used to change the direction of the collimated light.

7. The semiconductor laser according to claim 2, characterized in that The plurality of second photodiodes and the first photodiode are all surface mount photodiodes.

8. The semiconductor laser according to claim 1, characterized in that The other areas of the circuit board except the photodiode component are coated with a light absorbing coating.

9. The semiconductor laser according to claim 1, characterized in that The semiconductor laser further includes a third photodiode, and the third photodiode is attached to a side surface of the collimator that is perpendicular to the base.

10. The semiconductor laser according to claim 1, characterized in that The semiconductor laser further includes a fourth photodiode, and the fourth photodiode is located inside the collimator.

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