Gate resistance adjustable circuit

By designing an IGBT gate resistance adjustable circuit including a computer module, an MCU module and a resistor selection module, the problem of cumbersome IGBT gate resistance testing in the prior art is solved, and more efficient and accurate IGBT dynamic testing is achieved.

CN222563793UInactive Publication Date: 2025-03-04HEFEI KEWELL POWER SYST CO LTD
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Patent Information

Application Number
CN202421241440.1
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-05-31
Publication Date
2025-03-04
Estimated Expiration
Not applicable · inactive patent

AI Technical Summary

Technical Problem

In the prior art, the test process of the IGBT on and off characteristics through gate resistors is cumbersome and time-consuming.

Method used

A gate resistance adjustable circuit is designed, including a computer module, MCU module, IGBT on resistor selection module, IGBT off resistor selection module, switch S1, switch S2, IGBT adjustable drive positive voltage module, IGBT adjustable drive negative voltage module, and insulated gate bipolar transistor. Through human-computer interaction and MCU control, flexible selection and independent settings of IGBT gate resistance are realized.

Benefits of technology

This solution greatly simplifies the adjustment process of IGBT gate resistors, improves the efficiency and accuracy of testing, allows flexible selection of different gate resistors, and sets different driving resistors to turn on and off of IGBT.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model discloses a grid resistance adjustable circuit, belongs to the technical field of power electronics, and solves the problems of tedious process and long time consumption of testing on and off characteristics of an IGBT (Insulated Gate Bipolar Translator) through a grid resistance in the prior art. Comprising an upper computer module, an MCU module, an IGBT turn-on resistance selection module, an IGBT turn-off resistance selection module, a switch S1, a switch S2, an IGBT adjustable driving positive voltage module, an IGBT adjustable driving negative voltage module and an insulated gate bipolar transistor Q1, man-machine interaction is completed by the upper computer module, a processing result is sent to the MCU module, and the MCU module controls the IGBT turn-on resistance selection module, the IGBT turn-off resistance selection module, the switch S1, the switch S2, the IGBT adjustable driving positive voltage module, the IGBT adjustable driving negative voltage module and the insulated gate bipolar transistor Q1 according to the result sent by the upper computer module. A user selects the gate resistance by controlling the hardware of the gate resistance adjustable circuit, the gate resistance adjustable circuit has ten gears, the value range is large, the gate resistance requirement of most IGBT dynamic tests is met, the on-off resistance of an IGBT gate loop is independent of each other, different gate resistors can be flexibly selected, and the gate resistance adjustable circuit has a wide application prospect. And different driving resistors can be switched on and switched off through the IGBT, so that the test is more convenient and accurate.
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Description

Technical Field

[0001] The utility model belongs to the technical field of power electronics and relates to a grid resistor adjustable circuit. Background Art

[0002] With the development of power electronics technology and the improvement of semiconductor technology, the research on the characteristics of semiconductor devices in the field of power electronics is becoming more and more important. IGBT modules are newcomers in the semiconductor field. Their characteristics research includes static characteristics research and dynamic characteristics research. Static characteristics can often be obtained from datasheets, while dynamic characteristics need to be measured manually. The gate on-resistance and off-resistance of IGBT modules have an important influence on the switching time, loss, collector current change rate and other parameters of IGBT. When studying the switching characteristics of IGBT modules, it is necessary to frequently adjust the on-resistance and off-resistance to test the on- and off-characteristics of IGBT in a wide range of gate resistance values, so that application engineers can choose suitable gate resistors to turn on and off IGBT under various working conditions of IGBT. In the existing research process on the switching characteristics of IGBT modules, the gate resistance is mainly adjusted by manual welding, which is cumbersome and the PCBA has a welding life. In addition, the resistance has a nominal value, and the resistance value outside the nominal value needs to be calculated in series and parallel before searching, which delays the test time. Utility Model Content

[0003] The technical problem to be solved by the utility model is that the process of testing the turn-on and turn-off characteristics of IGBT by gate resistance in the prior art is cumbersome and time-consuming.

[0004] The utility model solves the above technical problems through the following technical solutions:

[0005] A gate resistance adjustable circuit comprises a host computer module, an MCU module, an IGBT on-resistance selection module, an IGBT off-resistance selection module, a switch S1, a switch S2, an IGBT adjustable driving positive voltage module, an IGBT adjustable driving negative voltage module, and an insulated gate bipolar transistor; the output end of the host computer module is connected to the input end of the MCU module, one of the output ends of the MCU module is connected to one of the input ends of the IGBT on-resistance selection module, another of the output ends of the MCU module is connected to one of the input ends of the IGBT off-resistance selection module, the output end of the IGBT adjustable driving positive voltage module is connected to one end of the switch S1, the other end of the switch S1 is connected to another of the input ends of the IGBT on-resistance selection module, the output end of the IGBT adjustable driving negative voltage module is connected to one end of the switch S2, the other end of the switch S2 is connected to another of the input ends of the IGBT off-resistance selection module, the output end of the IGBT on-resistance selection module is connected to the output end of the IGBT off-resistance selection module, and is connected to the gate of the insulated gate bipolar transistor.

[0006] This application completes human-computer interaction through the host computer in the main loop and sends the processing results to the MCU. The MCU completes the user's selection of the gate resistance by controlling the hardware of the gate resistance adjustable circuit based on the results sent by the host computer. The on and off resistances of the IGBT gate circuit are independent of each other. Not only can different gate resistances be flexibly selected, but also different drive resistances can be set for turning the IGBT on and off, making the test more convenient and accurate.

[0007] Preferably, the IGBT on-resistance selection module has 10 gears.

[0008] Preferably, the IGBT turn-off resistance selection module has 10 gears.

[0009] Preferably, the IGBT on-resistance selection module includes a switch K1B, a switch K2B, a switch K3B, a switch K4B, a switch K5B, a switch K6B, a switch K7B, a switch K8B, a switch K9B, and a switch K10B; one end of the switch K6B is connected to the other end of the switch S1, the other end of the switch K6B is connected to one end of the switch K1B, the other end of the switch K1B is connected to one end of the switch K7B, the other end of the switch K7B is connected to one end of the switch K2B, the other end of the switch K2B is connected to one end of the switch K8B. The other end of switch K8B is connected to one end of switch K3B, the other end of switch K3B is connected to one end of switch K9B, the other end of switch K9B is connected to one end of switch K4B, the other end of switch K4B is connected to one end of switch K10B, the other end of switch K10B is connected to one end of switch K5B, the other end of switch K5B is connected to the output end of the IGBT turn-off resistance selection module and the gate of the insulated gate bipolar transistor; at the same time, switches K1B-K10B are all controlled by individual relays of the MCU module.

[0010] The IGBT turn-on resistance selection module also includes resistor R1, resistor R2, resistor R3, resistor R4, resistor R5, resistor R6, resistor R7, resistor R8, resistor R9, resistor R10, resistor R11, resistor R12, resistor R13, resistor R14, resistor R15, resistor R16, resistor R17, resistor R18, resistor R19, resistor R20, resistor R21, resistor R22, resistor R23, resistor R24, resistor R25, resistor R26, resistor R27, Resistor R28, resistor R29, resistor R30; the resistor R1 is connected in parallel at both ends of the switch K6B, the resistor R11 is connected in parallel at both ends of the resistor R1, the resistor R21 is connected in parallel at both ends of the resistor R11, the resistor R2 is connected in parallel at both ends of the switch K1B, the resistor R12 is connected in parallel at both ends of the resistor R2, the resistor R22 is connected in parallel at both ends of the resistor R12, the resistor R3 is connected in parallel at both ends of the switch K7B, the resistor R13 is connected in parallel at both ends of the resistor R3, the resistor R23 is connected in parallel at both ends of the resistor R13, and the resistor R4 The resistor R14 is connected in parallel to both ends of the switch K2B, the resistor R14 is connected in parallel to both ends of the resistor R4, the resistor R24 ​​is connected in parallel to both ends of the resistor R14, the resistor R5 is connected in parallel to both ends of the switch K8B, the resistor R15 is connected in parallel to both ends of the resistor R5, the resistor R25 is connected in parallel to both ends of the resistor R15, the resistor R6 is connected in parallel to both ends of the switch K3B, the resistor R16 is connected in parallel to both ends of the resistor R6, the resistor R26 is connected in parallel to both ends of the resistor R16, the resistor R7 is connected in parallel to both ends of the switch K9B, and the resistor R17 is connected in parallel to the resistor R7 The resistor R27 is connected in parallel at both ends of the resistor R17, the resistor R8 is connected in parallel at both ends of the switch K4B, the resistor R18 is connected in parallel at both ends of the resistor R8, the resistor R28 is connected in parallel at both ends of the resistor R18, the resistor R9 is connected in parallel at both ends of the switch K10B, the resistor R19 is connected in parallel at both ends of the resistor R9, the resistor R29 is connected in parallel at both ends of the resistor R19, the resistor R10 is connected in parallel at both ends of the switch K5B, the resistor R20 is connected in parallel at both ends of the resistor R10, and the resistor R30 is connected in parallel at both ends of the resistor R20.

[0011] The resistors R1 - R30 are all 1W resistors.

[0012] Preferably, the IGBT turn-off resistance selection module includes a switch K11B, a switch K12B, a switch K13B, a switch K14B, a switch K15B, a switch K16B, a switch K17B, a switch K18B, a switch K19B, and a switch K20B; one end of the switch K16B is connected to the other end of the switch S2, the other end of the switch K16B is connected to one end of the switch K11B, the other end of the switch K11B is connected to one end of the switch K17B, the other end of the switch K17B is connected to one end of the switch K12B, and the other end of the switch K12B is connected to the switch S2. One end of switch K18B is connected, the other end of switch K18B is connected to one end of switch K13B, the other end of switch K13B is connected to one end of switch K19B, the other end of switch K19B is connected to one end of switch K14B, the other end of switch K4B is connected to one end of switch K20B, the other end of switch K20B is connected to one end of switch K15B, the other end of switch K15B is connected to the other end of switch K5B together and connected to the gate of the insulated gate bipolar transistor; at the same time, switches K11B-K20B are all controlled by individual relays of the MCU module.

[0013] The IGBT turn-off resistance selection module also includes resistor R31, resistor R32, resistor R33, resistor R34, resistor R35, resistor R36, resistor R37, resistor R38, resistor R39, resistor R40, resistor R41, resistor R42, resistor R43, resistor R44, resistor R45, resistor R46, resistor R47, resistor R48, resistor R49, resistor R50, resistor R51, resistor R52, resistor R53, resistor R54, resistor R55, resistor R56, resistor R57, Resistor R58, resistor R59, resistor 60; the resistor R31 is connected in parallel at both ends of the switch K16B, the resistor R41 is connected in parallel at both ends of the resistor R31, the resistor R51 is connected in parallel at both ends of the resistor R41, the resistor R32 is connected in parallel at both ends of the switch K11B, the resistor R42 is connected in parallel at both ends of the resistor R32, the resistor R52 is connected in parallel at both ends of the resistor R42, the resistor R33 is connected in parallel at both ends of the switch K17B, the resistor R43 is connected in parallel at both ends of the resistor R33, the resistor R53 is connected in parallel at both ends of the resistor R43, the resistor R34 The resistor R36 is connected in parallel at both ends of the switch K13B, the resistor R46 is connected in parallel at both ends of the resistor R36, the resistor R56 is connected in parallel at both ends of the resistor R46, the resistor R37 is connected in parallel at both ends of the switch K19B, and the resistor R47 is connected in parallel at both ends of the resistor R46. Resistor R57 is connected in parallel at both ends of resistor R47, resistor R18 is connected in parallel at both ends of switch K14B, resistor R48 is connected in parallel at both ends of resistor R38, resistor R58 is connected in parallel at both ends of resistor R48, resistor R39 is connected in parallel at both ends of switch K20B, resistor R49 is connected in parallel at both ends of resistor R39, resistor R59 is connected in parallel at both ends of resistor R49, resistor R40 is connected in parallel at both ends of switch K15B, resistor R50 is connected in parallel at both ends of resistor R40, and resistor R60 is connected in parallel at both ends of resistor R50.

[0014] The resistors R31 - R60 are all 1W resistors.

[0015] Preferably, the switch S1 and the switch S2 are both SW-SPST type switches.

[0016] The advantages of the utility model are:

[0017] This application completes human-computer interaction through the host computer in the main loop and sends the processing results to the MCU. The MCU completes the user's selection of the gate resistance by controlling the hardware of the gate resistance adjustable circuit based on the results sent by the host computer. The on and off resistances of the IGBT gate circuit are independent of each other. Not only can different gate resistances be flexibly selected, but also different drive resistances can be set for turning the IGBT on and off, making the test more convenient and accurate.

[0018] At the same time, the present application has 10 gears that double in sequence. The larger resistance selection range can meet the gate resistance requirements of most IGBT dynamic tests. The resistance value of each gear is obtained by connecting three 1W resistors in parallel. On the one hand, the resistance value of the corresponding gear can be obtained, and on the other hand, the power is increased to prevent the driving resistor from burning out during the IGBT opening process. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 This is a main circuit structure diagram of a gate resistance adjustable circuit of the first embodiment of the utility model;

[0020] Figure 2 The utility model is a gate resistance adjustable circuit diagram of a gate resistance adjustable circuit according to the first embodiment of the utility model. DETAILED DESCRIPTION

[0021] In order to make the purpose, technical solution and advantages of the embodiments of the utility model clearer, the technical solution in the embodiments of the utility model will be clearly and completely described below in combination with the embodiments of the utility model. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0022] The technical solution of the utility model is further described below in conjunction with the accompanying drawings and specific embodiments of the specification:

[0023] Embodiment 1

[0024] like Figure 1As shown, it is a main circuit structure diagram of a gate resistance adjustable circuit of the first embodiment of the utility model, including a host computer module, an MCU module, an IGBT turn-on resistance selection module, an IGBT turn-off resistance selection module, a switch S1, a switch S2, an IGBT adjustable drive positive voltage module, an IGBT adjustable drive negative voltage module, and an insulated gate bipolar transistor Q1; the host computer module controls the connection to the MCU module, and the MCU module outputs a control signal to control the opening and closing of the relay switch of the IGBT turn-on resistance selection module, and the control signal output by the MCU module can also control the relay switch of the IGBT turn-off resistance selection module The switch is turned on and off, the output end of the IGBT adjustable driving positive voltage module is connected to one end of the switch S1, and the other end of the switch S1 is connected to the input end of the IGBT turn-on resistance selection module, the output end of the IGBT adjustable driving negative voltage module is connected to one end of the switch S2, and the other end of the switch S2 is connected to the input end of the IGBT turn-off resistance selection module, the output end of the IGBT turn-on resistance selection module and the output end of the IGBT turn-off resistance selection module are connected together and connected to the gate of the insulated gate bipolar transistor Q1. The insulated gate bipolar transistor described here is referred to as IGBT, and the following content uses the abbreviation IGBT.

[0025] During the test, when the IGBT is turned on, switch S1 is closed and switch S2 is opened. The IGBT adjustable driving positive voltage passes through switch S1 and the IGBT turn-on resistor in sequence, and finally enters the gate of the IGBT to complete the turning on of the IGBT; when the IGBT is turned off, switch S2 is closed and switch S1 is opened. The IGBT adjustable driving negative voltage passes through switch S2 and the IGBT turn-off resistor in sequence, and finally enters the gate of the IGBT to complete the turning off of the IGBT.

[0026] The following is a detailed description of the IGBT gate adjustable circuit diagram, see Figure 2, is a gate resistance adjustable circuit diagram of a gate resistance adjustable circuit of Embodiment 1 of the utility model, wherein the IGBT turn-on resistance selection module includes switch K1B, switch K2B, switch K3B, switch K4B, switch K5B, switch K6B, switch K7B, switch K8B, switch K9B, switch K10B, resistor R1, resistor R2, resistor R3, resistor R4, resistor R5, resistor R6, resistor R7, resistor R8, resistor R9, resistor R10, resistor R11, resistor R12, resistor R13, resistor R14, resistor R15, resistor R16, resistor R17, resistor R18, resistor R19, resistor R20, resistor R21, resistor R22, resistor R23, resistor R24, resistor R25, resistor R26, resistor R27, resistor R28, resistor R29, and resistor R30; the switch K6 One end of switch K6B is connected to the other end of switch K1B, the other end of switch K1B is connected to one end of switch K7B, the other end of switch K7B is connected to one end of switch K2B, the other end of switch K2B is connected to one end of switch K8B, the other end of switch K8B is connected to one end of switch K3B, the other end of switch K3B is connected to one end of switch K9B, the other end of switch K9B is connected to one end of switch K4B, the other end of switch K4B is connected to one end of switch K10B, the other end of switch K10B is connected to one end of switch K5B, the other end of switch K5B is connected to the output end of the IGBT turn-off resistance selection module and is connected to the gate of the insulated gate bipolar transistor Q1 (IGBT); at the same time, switches K1B-K10B are all controlled by individual relays of the MCU module;The resistor R1 is connected in parallel to both ends of the switch K6B, the resistor R11 is connected in parallel to both ends of the resistor R1, the resistor R21 is connected in parallel to both ends of the resistor R11, the resistor R2 is connected in parallel to both ends of the switch K1B, the resistor R12 is connected in parallel to both ends of the resistor R2, the resistor R22 is connected in parallel to both ends of the resistor R12, the resistor R3 is connected in parallel to both ends of the switch K7B, the resistor R13 is connected in parallel to both ends of the resistor R3, the resistor R23 is connected in parallel to both ends of the resistor R13, the resistor R4 is connected in parallel to both ends of the switch K2B, the resistor R14 is connected in parallel to both ends of the resistor R4, the resistor R24 ​​is connected in parallel to both ends of the resistor R14, the resistor R5 is connected in parallel to both ends of the switch K8B, the resistor R15 is connected in parallel to both ends of the resistor R5, the resistor R25 is connected in parallel to both ends of the resistor R15, and the resistor R6 is connected in parallel to both ends of the switch K7B. Resistor R6 is connected in parallel to both ends of switch K3B, resistor R16 is connected in parallel to both ends of resistor R6, resistor R26 is connected in parallel to both ends of resistor R16, resistor R7 is connected in parallel to both ends of switch K9B, resistor R17 is connected in parallel to both ends of resistor R7, resistor R27 is connected in parallel to both ends of resistor R17, resistor R8 is connected in parallel to both ends of switch K4B, resistor R18 is connected in parallel to both ends of resistor R8, resistor R28 is connected in parallel to both ends of resistor R18, resistor R9 is connected in parallel to both ends of switch K10B, resistor R19 is connected in parallel to both ends of resistor R9, resistor R29 is connected in parallel to both ends of resistor R19, resistor R10 is connected in parallel to both ends of switch K5B, resistor R20 is connected in parallel to both ends of resistor R10, and resistor R30 is connected in parallel to both ends of resistor R20.;

[0027] The IGBT turn-off resistance selection module includes switch K11B, switch K12B, switch K13B, switch K14B, switch K15B, switch K16B, switch K17B, switch K18B, switch K19B, switch K20B, resistor R31, resistor R32, resistor R33, resistor R34, resistor R35, resistor R36, resistor R37, resistor R38, resistor R39, resistor R40, resistor R41, resistor R42, resistor R43, resistor R44, resistor R45, resistor R46, resistor R47, resistor R48, resistor R49, resistor R50, resistor R51, resistor R52, resistor R53, resistor R54, resistor R55, resistor R56, resistor R57, resistor R58, resistor R59, and resistor 60; one end of the switch K16B is connected to the other end of the switch S2 The other end of switch K16B is connected to one end of switch K11B, the other end of switch K11B is connected to one end of switch K17B, the other end of switch K17B is connected to one end of switch K12B, the other end of switch K12B is connected to one end of switch K18B, the other end of switch K18B is connected to one end of switch K13B, the other end of switch K13B is connected to one end of switch K19B, the other end of switch K19B is connected to one end of switch K14B, the other end of switch K4B is connected to one end of switch K20B, the other end of switch K20B is connected to one end of switch K15B, the other end of switch K15B and the other end of switch K5B are connected together and connected to the gate of insulated gate bipolar transistor Q1 (IGBT); at the same time, switches K11B-K20B are all controlled by individual relays of the MCU module;The resistor R1 is connected in parallel to both ends of the switch K6B, the resistor R11 is connected in parallel to both ends of the resistor R1, the resistor R21 is connected in parallel to both ends of the resistor R11, the resistor R2 is connected in parallel to both ends of the switch K1B, the resistor R12 is connected in parallel to both ends of the resistor R2, the resistor R22 is connected in parallel to both ends of the resistor R12, the resistor R3 is connected in parallel to both ends of the switch K7B, the resistor R13 is connected in parallel to both ends of the resistor R3, the resistor R23 is connected in parallel to both ends of the resistor R13, the resistor R4 is connected in parallel to both ends of the switch K2B, the resistor R14 is connected in parallel to both ends of the resistor R4, the resistor R24 ​​is connected in parallel to both ends of the resistor R14, the resistor R5 is connected in parallel to both ends of the switch K8B, the resistor R15 is connected in parallel to both ends of the resistor R5, and the resistor R25 is connected in parallel to both ends of the resistor R15. The resistor R6 is connected in parallel to both ends of the switch K3B, the resistor R16 is connected in parallel to both ends of the resistor R6, the resistor R26 is connected in parallel to both ends of the resistor R16, the resistor R7 is connected in parallel to both ends of the switch K9B, the resistor R17 is connected in parallel to both ends of the resistor R7, the resistor R27 is connected in parallel to both ends of the resistor R17, the resistor R8 is connected in parallel to both ends of the switch K4B, the resistor R18 is connected in parallel to both ends of the resistor R8, the resistor R28 is connected in parallel to both ends of the resistor R18, the resistor R9 is connected in parallel to both ends of the switch K10B, the resistor R19 is connected in parallel to both ends of the resistor R9, the resistor R29 is connected in parallel to both ends of the resistor R19, the resistor R10 is connected in parallel to both ends of the switch K5B, the resistor R20 is connected in parallel to both ends of the resistor R10, and the resistor R30 is connected in parallel to both ends of the resistor R20.;

[0028] The IGBT gate adjustable circuit IGBT turn-on resistance selection module and IGBT turn-off resistance selection module both have 10 gears, which are doubled in sequence to meet the gate resistance selection in the range of 0.1Ω to 102.4Ω. Each gear is controlled by a separate single switch relay. When the relay controlling a certain gear is turned on and indicates that the gear is removed from the IGBT gate resistance loop, each gear resistance is obtained by connecting three 1W resistors in parallel. The purpose of parallel connection is to obtain the resistance value of the corresponding gear on the one hand, and to increase power on the other hand, because the IGBT drive current is large, it prevents the drive resistor from burning out during the IGBT opening process. The IGBT gate adjustable circuit can meet the selection of gate drive resistance during most IGBT dynamic tests. After the user sets the gate drive resistance value in the host computer module and sends it down, the MCU module will control the relay action in the gate drive resistance circuit accordingly, thereby completing the selection of gate resistance during the IGBT test process.

[0029] The utility model proposes an IGBT gate resistor adjustable circuit in an IGBT dynamic test. The IGBT gate resistor adjustable circuit is divided into two independent parts, the IGBT turn-on and the IGBT turn-off, which is convenient for users to set different gate drive resistance values ​​for IGBT dynamic testing, and helps to improve the flexibility and accuracy of the IGBT dynamic testing system. At the same time, the IGBT dynamic test gate resistor described in the utility model can be selected in a range from 0.1Ω to 102.4Ω, which can meet the selection of gate resistors during most IGBT dynamic tests. At the same time, the IGBT turn-on and turn-off resistance selections are independent, and the turn-on and turn-off resistances can be set to different resistance values, which is more conducive to users testing the characteristics of the IGBT. Considering that the IGBT turn-on loop current is large, three large power resistors are used in parallel in the circuit design, which can not only increase the power consumption, but also obtain high-precision resistance gears, making the IGBT dynamic test more accurate and convenient, and can also avoid the occurrence of gate resistor burning during the test process.

[0030] During operation, the user sets the IGBT gate resistance value in the host computer operation interface. After clicking the test button, the host computer processes the gate resistance set by the user and sends the processed result to the MCU. The MCU sends a control signal to the back-end hardware based on the processing result sent by the host computer. At this time, the relays controlling different resistance gears in the IGBT gate resistance adjustable circuit will act accordingly, and finally the IGBT drive resistance value set by the user in the host computer is obtained. In addition, when there is no control signal output, the relays controlling each resistance gear do not act and remain disconnected. At this time, the IGBT gate loop resistance is accumulated in all gears, and the resistance value is the largest.

[0031] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A gate resistance adjustable circuit, characterized in that: It includes a host computer module, an MCU module, an IGBT on-resistance selection module, an IGBT off-resistance selection module, a switch S1, a switch S2, an IGBT adjustable drive positive voltage module, an IGBT adjustable drive negative voltage module, and an insulated gate bipolar transistor Q1; the output end of the host computer module is connected to the input end of the MCU module, one of the output ends of the MCU module is connected to one of the input ends of the IGBT on-resistance selection module, another of the output ends of the MCU module is connected to one of the input ends of the IGBT off-resistance selection module, the output end of the IGBT adjustable drive positive voltage module is connected to one end of the switch S1, the other end of the switch S1 is connected to another input end of the IGBT on-resistance selection module, the output end of the IGBT adjustable drive negative voltage module is connected to one end of the switch S2, the other end of the switch S2 is connected to another input end of the IGBT off-resistance selection module, the output end of the IGBT on-resistance selection module is connected to the output end of the IGBT off-resistance selection module, and is connected to the gate of the insulated gate bipolar transistor Q1.

2. The gate resistance adjustable circuit according to claim 1, characterized in that: The IGBT on-resistance selection module has 10 gears.

3. The gate resistance adjustable circuit according to claim 1, characterized in that: The IGBT turn-off resistance selection module has 10 gears.

4. The gate resistance adjustable circuit according to claim 1, characterized in that: The IGBT on-resistance selection module includes a switch K1B, a switch K2B, a switch K3B, a switch K4B, a switch K5B, a switch K6B, a switch K7B, a switch K8B, a switch K9B, and a switch K10B; one end of the switch K6B is connected to the other end of the switch S1, the other end of the switch K6B is connected to one end of the switch K1B, the other end of the switch K1B is connected to one end of the switch K7B, the other end of the switch K7B is connected to one end of the switch K2B, and the other end of the switch K2B is connected to one end of the switch K8B. The other end of switch K8B is connected to one end of switch K3B, the other end of switch K3B is connected to one end of switch K9B, the other end of switch K9B is connected to one end of switch K4B, the other end of switch K4B is connected to one end of switch K10B, the other end of switch K10B is connected to one end of switch K5B, the other end of switch K5B is connected to the output end of the IGBT turn-off resistance selection module and the gate of the insulated gate bipolar transistor Q1; at the same time, switches K1B-K10B are all controlled by individual relays of the MCU module.

5. The gate resistance adjustable circuit according to claim 4, characterized in that: The IGBT turn-on resistance selection module also includes resistor R1, resistor R2, resistor R3, resistor R4, resistor R5, resistor R6, resistor R7, resistor R8, resistor R9, resistor R10, resistor R11, resistor R12, resistor R13, resistor R14, resistor R15, resistor R16, resistor R17, resistor R18, resistor R19, resistor R20, resistor R21, resistor R22, resistor R23, resistor R24, resistor R25, resistor R26, resistor R27, Resistor R28, resistor R29, resistor R30; the resistor R1 is connected in parallel at both ends of the switch K6B, the resistor R11 is connected in parallel at both ends of the resistor R1, the resistor R21 is connected in parallel at both ends of the resistor R11, the resistor R2 is connected in parallel at both ends of the switch K1B, the resistor R12 is connected in parallel at both ends of the resistor R2, the resistor R22 is connected in parallel at both ends of the resistor R12, the resistor R3 is connected in parallel at both ends of the switch K7B, the resistor R13 is connected in parallel at both ends of the resistor R3, the resistor R23 is connected in parallel at both ends of the resistor R13, and the resistor R4 The resistor R14 is connected in parallel to both ends of the switch K2B, the resistor R14 is connected in parallel to both ends of the resistor R4, the resistor R24 ​​is connected in parallel to both ends of the resistor R14, the resistor R5 is connected in parallel to both ends of the switch K8B, the resistor R15 is connected in parallel to both ends of the resistor R5, the resistor R25 is connected in parallel to both ends of the resistor R15, the resistor R6 is connected in parallel to both ends of the switch K3B, the resistor R16 is connected in parallel to both ends of the resistor R6, the resistor R26 is connected in parallel to both ends of the resistor R16, the resistor R7 is connected in parallel to both ends of the switch K9B, and the resistor R17 is connected in parallel to the resistor R7 The resistor R27 is connected in parallel at both ends of the resistor R17, the resistor R8 is connected in parallel at both ends of the switch K4B, the resistor R18 is connected in parallel at both ends of the resistor R8, the resistor R28 is connected in parallel at both ends of the resistor R18, the resistor R9 is connected in parallel at both ends of the switch K10B, the resistor R19 is connected in parallel at both ends of the resistor R9, the resistor R29 is connected in parallel at both ends of the resistor R19, the resistor R10 is connected in parallel at both ends of the switch K5B, the resistor R20 is connected in parallel at both ends of the resistor R10, and the resistor R30 is connected in parallel at both ends of the resistor R20.

6. The gate resistance adjustable circuit according to claim 5, characterized in that: The resistors R1 - R30 are all 1W resistors.

7. The gate resistance adjustable circuit according to claim 1, characterized in that: The IGBT turn-off resistance selection module includes a switch K11B, a switch K12B, a switch K13B, a switch K14B, a switch K15B, a switch K16B, a switch K17B, a switch K18B, a switch K19B, and a switch K20B; one end of the switch K16B is connected to the other end of the switch S2, the other end of the switch K16B is connected to one end of the switch K11B, the other end of the switch K11B is connected to one end of the switch K17B, the other end of the switch K17B is connected to one end of the switch K12B, and the other end of the switch K12B is connected to the switch K1 The switch K18B is connected to one end of the switch K13B, the other end of the switch K13B is connected to one end of the switch K19B, the other end of the switch K19B is connected to one end of the switch K14B, the other end of the switch K4B is connected to one end of the switch K20B, the other end of the switch K20B is connected to one end of the switch K15B, the other end of the switch K15B is connected to the other end of the switch K5B together and connected to the gate of the insulated gate bipolar transistor Q1; at the same time, the switches K11B-K20B are all controlled by individual relays of the MCU module.

8. The gate resistance adjustable circuit according to claim 7, characterized in that: The IGBT turn-off resistance selection module also includes resistor R31, resistor R32, resistor R33, resistor R34, resistor R35, resistor R36, resistor R37, resistor R38, resistor R39, resistor R40, resistor R41, resistor R42, resistor R43, resistor R44, resistor R45, resistor R46, resistor R47, resistor R48, resistor R49, resistor R50, resistor R51, resistor R52, resistor R53, resistor R54, resistor R55, resistor R56, resistor R57, Resistor R58, resistor R59, resistor 60; the resistor R31 is connected in parallel at both ends of the switch K16B, the resistor R41 is connected in parallel at both ends of the resistor R31, the resistor R51 is connected in parallel at both ends of the resistor R41, the resistor R32 is connected in parallel at both ends of the switch K11B, the resistor R42 is connected in parallel at both ends of the resistor R32, the resistor R52 is connected in parallel at both ends of the resistor R42, the resistor R33 is connected in parallel at both ends of the switch K17B, the resistor R43 is connected in parallel at both ends of the resistor R33, the resistor R53 is connected in parallel at both ends of the resistor R43, the resistor R34 The resistor R36 is connected in parallel at both ends of the switch K13B, the resistor R46 is connected in parallel at both ends of the resistor R36, the resistor R56 is connected in parallel at both ends of the resistor R46, the resistor R37 is connected in parallel at both ends of the switch K19B, and the resistor R47 is connected in parallel at both ends of the resistor R46. Resistor R57 is connected in parallel at both ends of resistor R47, resistor R18 is connected in parallel at both ends of switch K14B, resistor R48 is connected in parallel at both ends of resistor R38, resistor R58 is connected in parallel at both ends of resistor R48, resistor R39 is connected in parallel at both ends of switch K20B, resistor R49 is connected in parallel at both ends of resistor R39, resistor R59 is connected in parallel at both ends of resistor R49, resistor R40 is connected in parallel at both ends of switch K15B, resistor R50 is connected in parallel at both ends of resistor R40, and resistor R60 is connected in parallel at both ends of resistor R50.

9. The gate resistance adjustable circuit according to claim 8, characterized in that: The resistors R31 - R60 are all 1W resistors.

10. The gate resistance adjustable circuit according to claim 1, characterized in that: The switch S1 and the switch S2 are both SW-SPST type switches.