Heat preservation structure for growth of large-size silicon single crystals

By designing a thermal insulation structure including connecting heating mechanism, diffusion component, storage component, etc., the problem of temperature monitoring and heating uneven during the growth of large-size silicon single crystals in the prior art is solved, and a more stable temperature control and a more suitable growth environment are achieved.

CN222574860UActive Publication Date: 2025-03-07JIANGSU HEYANG NEW MATERIAL CO LTD
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Patent Information

Application Number
CN202421266458.7
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-06-04
Publication Date
2025-03-07
Estimated Expiration
2034-06-04

AI Technical Summary

Technical Problem

The existing thermal insulation structure for the growth of large-sized silicon single crystals is simple and cannot monitor the temperature in the box in real time. The temperatures at the bottom and top are prone to deviations during heating, affecting the growth of silicon single crystals.

Method used

An insulation structure including connecting a heating mechanism, a diffusion assembly, a storage assembly, a roof panel, a connecting box and a heating box is designed. The connecting heating mechanism includes a heating assembly and a connecting assembly, which heats and controls the temperature through the heating assembly. The connecting assembly is used for temperature observation and warning, the diffusion assembly is used to uniformly diffuse heat gas, and the storage assembly is used to store large-sized silicon single crystals.

Benefits of technology

Real-time monitoring and uniform heating of the temperature in the box are achieved, temperature deviation is avoided, and a more suitable growth environment for large-size silicon single crystals is provided.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model discloses a heat preservation structure for large-size silicon single crystal growth, which belongs to the technical field of large-size silicon single crystal growth, and is characterized by comprising a connection heating mechanism, a diffusion assembly, a storage assembly, a top plate, a connection box and a heating box, the heating assembly can heat the interior of the connecting box, meanwhile, the heating assembly can control the heating temperature, so that the temperature in the connecting box can be controlled, the connecting assembly can be connected with the storage assembly, and the connecting assembly can also achieve the effect of observing the temperature in the connecting box; meanwhile, the effect of warning after the temperature in the connecting box reaches a certain degree can be achieved, the diffusion assembly can achieve the effect of diffusing hot air conveyed into the connecting box by the heating assembly, and therefore the hot air can be fully and evenly diffused in the connecting box; and the storage assembly can achieve the effect of storing large-size silicon single crystals.
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Description

Technical Field

[0001] The utility model relates to the technical field of large-size silicon single crystal growth, in particular to a heat preservation structure for large-size silicon single crystal growth. Background Art

[0002] Single crystal silicon has a bandgap width of 1.11eV and a basically complete lattice structure. It is a good semiconductor material. The basic purity requirement in production is 99.9999%, or even above 99.9999999%.

[0003] At present, a Chinese utility model with announcement number: CN212357456U discloses a thermal field structure for growing large-size silicon carbide single crystals by a PVT method, which includes a medium-frequency heating coil, a graphite felt insulation layer, an inner crucible, a seed crystal holder, an outer crucible, a gas cooling device and an outer crucible cover, wherein the medium-frequency heating coil is arranged on the outer ring of the graphite felt insulation layer, the graphite felt insulation layer is arranged on the outer ring of the outer crucible, the inner crucible and the outer crucible constitute a crucible with a detachable nested structure, the inner crucible is filled with silicon carbide raw material, the seed crystal holder is the inner crucible cover arranged above the inner crucible, the crucible wall of the outer crucible is gradiently distributed, and the diameter gradually decreases from bottom to top, and a uniform gas cooling device is arranged on the upper part of the outer crucible cover. This utility model can improve the thermal field stability, greatly improve the process reproducibility, thereby improving the quality of large-size silicon carbide crystals and solving the problems in the prior art.

[0004] In the process of growing large-size silicon single crystals, an insulation structure for growing large-size silicon single crystals is needed to control the temperature so that the large-size silicon single crystals can get a better growth environment. Most of the existing insulation structures for growing large-size silicon single crystals are simple in structure and can only perform simple insulation and heating treatments. They are unable to monitor the temperature inside the box in real time. Moreover, most of the insulation structures, when heating the box, use a heating plate to transfer the temperature from the bottom of the box to the inside of the box, which will cause a temperature deviation between the bottom and top of the box, which is not conducive to the growth of large-size silicon single crystals. Utility Model Content

[0005] The utility model provides a heat preservation structure for growing large-size silicon single crystals, aiming to solve the problem that most of the existing heat preservation structures for growing large-size silicon single crystals have simple structures and can only perform simple heat preservation and heating treatments, and cannot monitor the temperature in the box in real time. Moreover, most of the heat preservation structures, when heating the box, use a heating plate to transmit the temperature from the bottom of the box to the inside of the box, which will cause a temperature deviation between the bottom and top of the box, which is not conducive to the growth of large-size silicon single crystals.

[0006] The utility model is implemented as follows: a heat preservation structure for growing large-size silicon single crystals, comprising a connection heating mechanism, a diffusion component, a storage component, a top plate, a connection box and a heating box, wherein the connection heating mechanism is arranged inside the heating box, the diffusion component is arranged at the rear side of the connection box, the storage component is arranged inside the connection box, the top plate is clamped on the top of the connection box, and the connection box is fixedly connected to the top of the heating box;

[0007] The connection heating mechanism comprises a heating component and a connection component. The heating component is arranged inside the heating box, and the connection component is arranged at the front side of the connection box.

[0008] In order to enable the heating component to achieve the effect of heating the inside of the connection box, the heating component can also control the heating temperature, so that the temperature inside the connection box can be controlled. As a preferred insulation structure for the growth of large-size silicon single crystals in the utility model, the heating component includes a conveying pipe, a heater, a first display screen, a control switch and a regulating knob. The conveying pipe is fixedly connected to both sides of the heater, and the heater is fixedly connected to the rear side of the heating box. The first display screen, the control switch and the regulating knob are all fixedly connected to the front side of the heater.

[0009] In order to enable the connecting component to achieve the effect of connecting the storage component, and the connecting component can also observe the temperature inside the connecting box, and at the same time can also achieve the effect of issuing an alarm when the temperature inside the connecting box reaches a certain level, as a preferred insulation structure for the growth of large-size silicon single crystals in the utility model, the connecting component includes a baffle, a slot, a warning light, a slide groove, a temperature sensor and a second display screen, the baffle is fixedly connected to both sides of the inside of the connecting box, the slot is opened on the top of the connecting box, the warning light, temperature sensor and the second display screen are all fixedly connected to the front side of the connecting box, and the slide groove is opened on the front and rear sides of the inside of the connecting box.

[0010] In order to enable the diffusion component to achieve the effect of diffusing the hot air transported by the heating component into the connecting box, so that the hot air can be fully and evenly diffused in the connecting box, the diffusion component is preferably used as a thermal insulation structure for the growth of large-size silicon single crystals in the utility model. The motor is fixedly connected to the rear side of the transmission rod, the fixed box is fixedly connected to the rear side of the connecting box, the transmission rod is fixedly connected to the rear side of the fan blade, the fan blade is rotatably connected to the rear side of the connecting frame, and the connecting frame is fixedly connected to the inner wall of the connecting box.

[0011] In order to enable the storage component to achieve the effect of storing large-size silicon single crystals, as a preferred insulation structure for the growth of large-size silicon single crystals in the utility model, the storage component includes a pull plate, a storage box and a sliding rod, the pull plate is fixedly connected to the top of the storage box, the storage box is slidably connected to the inside of the connecting box, and the sliding rod is fixedly connected to the front and rear sides of the storage box.

[0012] In order to enable the sealing gasket to achieve the effect of clamping and fixing the slot, as a preferred insulation structure for growing large-size silicon single crystals of the utility model, the bottom of the top plate is fixedly connected with a sealing gasket, and the surface of the sealing gasket is clamped with the inner wall of the slot.

[0013] In order to enable the connecting groove to achieve the effect of connecting and fixing the connecting frame, as a preferred insulation structure for growing large-size silicon single crystals in the utility model, a connecting groove is opened on the rear side of the connecting box, and the inner wall of the connecting groove is fixedly connected to the surface of the connecting frame.

[0014] In order to enable the connection holes to achieve the effect of connecting and fixing the conveying pipe, as a preferred insulation structure for the growth of large-size silicon single crystals in the utility model, connection holes are opened on both sides of the connection box, and the inner walls of the connection holes are fixedly connected to the surface of the conveying pipe.

[0015] Compared with the prior art, the beneficial effects of the utility model are:

[0016] The heat preservation structure for growing large-size silicon single crystals is connected to a heating mechanism, which includes a heating component and a connecting component. The heating component can heat the inside of a connection box, and the heating component can also control the heating temperature, so that the temperature inside the connection box can be controlled. The connecting component can connect the storage component, and the connecting component can also observe the temperature inside the connection box, and can also give an alarm when the temperature inside the connection box reaches a certain level. The diffusion component can diffuse the hot air transported into the connection box by the heating component, so that the hot air can be fully and evenly diffused in the connection box. The storage component can store large-size silicon single crystals. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 This is the overall structural diagram of the thermal insulation structure for growing large-size silicon single crystals of the utility model;

[0018] Figure 2 It is a three-dimensional schematic diagram of connecting the heating mechanism, the diffusion component and the storage component in the utility model;

[0019] Figure 3This is a schematic diagram of the connection of the heating component in the utility model;

[0020] Figure 4 It is a three-dimensional schematic diagram of the connection assembly in the utility model;

[0021] Figure 5 It is a connection diagram of the diffusion component in the utility model;

[0022] Figure 6 It is a connection diagram of the storage components in the utility model.

[0023] In the figure, 1. connect the heating mechanism; 101. heating component; 1011. conveying pipe; 1012. heater; 1013. first display screen; 1014. control switch; 1015. regulating knob; 102. connecting component; 1021. baffle; 1022. card slot; 1023. warning light; 1024. slide slot; 1025. temperature sensor; 1026. second display screen; 2. diffusion component; 201. motor; 202. fixing box; 203. transmission rod; 204. fan blade; 205. connecting frame; 3. storage component; 301. pull plate; 302. storage box; 303. slide rod; 4. top plate; 5. connecting box; 6. heating box; 7. sealing pad; 8. connecting groove; 9. connecting hole. DETAILED DESCRIPTION

[0024] In order to make the purpose, technical solution and advantages of the utility model more clear, the utility model is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the utility model and are not used to limit the utility model.

[0025] In the description of the present invention, it should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, in the description of the present invention, "multiple" means two or more, unless otherwise clearly and specifically defined.

[0026] See also Figure 1-6The utility model provides a technical solution: a heat preservation structure for growing large-size silicon single crystals, comprising a connecting heating mechanism 1, a diffusion component 2, a storage component 3, a top plate 4, a connecting box 5 and a heating box 6, wherein the connecting heating mechanism 1 is arranged inside the heating box 6, the diffusion component 2 is arranged at the rear side of the connecting box 5, the storage component 3 is arranged inside the connecting box 5, the top plate 4 is clamped on the top of the connecting box 5, and the connecting box 5 is fixedly connected to the top of the heating box 6;

[0027] The connection heating mechanism 1 comprises a heating component 101 and a connection component 102 . The heating component 101 is arranged inside the heating box 6 , and the connection component 102 is arranged at the front side of the connection box 5 .

[0028] In this embodiment: through the setting of the connection heating mechanism 1, the connection heating mechanism 1 includes a heating component 101 and a connection component 102. Through the setting of the heating component 101, the heating component 101 can achieve the effect of heating the inside of the connection box 5, and the heating component 101 can also control the heating temperature, so that the temperature in the connection box 5 can be controlled. Through the setting of the connection component 102, the connection component 102 can achieve the effect of connecting the storage component 3, and the connection component 102 can also observe the temperature in the connection box 5, and can also achieve the effect of issuing an alarm after the temperature in the connection box 5 reaches a certain level. Through the setting of the diffusion component 2, the diffusion component 2 can achieve the effect of diffusing the hot air transported into the connection box 5 by the heating component 101, so that the hot air can be fully and evenly diffused in the connection box 5. Through the setting of the storage component 3, the storage component 3 can achieve the effect of storing large-size silicon single crystals.

[0029] As a technical optimization solution of the utility model, the heating component 101 includes a delivery pipe 1011, a heater 1012, a first display screen 1013, a control switch 1014 and an adjustment knob 1015. The delivery pipe 1011 is fixedly connected to both sides of the heater 1012, the heater 1012 is fixedly connected to the rear side inside the heating box 6, and the first display screen 1013, the control switch 1014 and the adjustment knob 1015 are all fixedly connected to the front side of the heater 1012.

[0030] In this embodiment: through the setting of the delivery pipe 1011, the delivery pipe 1011 can achieve the effect of connecting and fixing the heater 1012, so that the hot air transmitted from the heater 1012 can be transported into the connection box 5 through the delivery pipe 1011. The heater 1012 is an existing heating device. Through the setting of the first display screen 1013, the first display screen 1013 can achieve the effect of observing the temperature adjusted by the heater 1012. Through the setting of the control switch 1014, the control switch 1014 can achieve the effect of switching the heater 1012. Through the setting of the control knob 1015, the control knob 1015 can achieve the effect of regulating the temperature.

[0031] As a technical optimization solution of the utility model, the connecting component 102 includes a baffle 1021, a slot 1022, a warning light 1023, a slide 1024, a temperature sensor 1025 and a second display screen 1026. The baffle 1021 is fixedly connected to both sides of the inside of the connecting box 5, the slot 1022 is opened at the top of the connecting box 5, the warning light 1023, the temperature sensor 1025 and the second display screen 1026 are all fixedly connected to the front side of the connecting box 5, and the slide 1024 is opened at the front and rear sides of the inside of the connecting box 5.

[0032] In this embodiment: through the setting of the baffle 1021, the baffle 1021 can prevent hot air from blowing directly on the surface of the storage box 302, thereby causing uneven temperatures; through the setting of the card slot 1022, the card slot 1022 can achieve the effect of connecting the sealing gasket 7; through the setting of the warning light 1023, the warning light 1023 can give an alarm after reaching a certain level inside the connection box 5; through the setting of the slide groove 1024, the slide groove 1024 can achieve the effect of sliding connection of the slide rod 303; through the setting of the temperature sensor 1025, the temperature sensor 1025 can achieve the effect of detecting the temperature inside the connection box 5, thereby displaying it on the second display screen 1026.

[0033] As a technical optimization scheme of the utility model, the diffusion component 2 includes a motor 201, a fixed box 202, a transmission rod 203, a fan blade 204 and a connecting frame 205. The motor 201 is fixedly connected to the rear side of the transmission rod 203, the fixed box 202 is fixedly connected to the rear side of the connecting box 5, the transmission rod 203 is fixedly connected to the rear side of the fan blade 204, the fan blade 204 is rotatably connected to the rear side of the connecting frame 205, and the connecting frame 205 is fixedly connected to the inner wall of the connecting box 5.

[0034] In this embodiment: through the setting of the motor 201, the motor 201 can provide rotational power for the transmission rod 203; through the setting of the fixed box 202, the fixed box 202 can connect and support the motor 201; through the setting of the transmission rod 203, the transmission rod 203 can connect the fan blades 204; through the setting of the fan blades 204, the fan blades 204 can be rotationally connected to the connecting frame 205; through the setting of the connecting frame 205, the connecting frame 205 can support the fan blades 204.

[0035] As a technical optimization solution of the utility model, the storage component 3 includes a pull plate 301, a storage box 302 and a sliding rod 303. The pull plate 301 is fixedly connected to the top of the storage box 302, the storage box 302 is slidably connected to the inside of the connecting box 5, and the sliding rod 303 is fixedly connected to the front and rear sides of the storage box 302.

[0036] In this embodiment: through the setting of the pull plate 301, the pull plate 301 can achieve the effect of facilitating the removal of the storage box 302 from the connection box 5. Through the setting of the storage box 302, the storage box 302 is an existing storage device for the growth of large-size silicon single crystals. Through the setting of the slide rod 303, the slide rod 303 can achieve the effect of limiting the sliding connection of the slide groove 1024.

[0037] As a technical optimization solution of the present invention, a sealing gasket 7 is fixedly connected to the bottom of the top plate 4 , and the surface of the sealing gasket 7 is engaged with the inner wall of the slot 1022 .

[0038] In this embodiment, the sealing gasket 7 is provided to achieve the effect of clamping and fixing the card slot 1022 .

[0039] As a technical optimization solution of the present invention, a connection groove 8 is opened on the rear side of the connection box 5 , and the inner wall of the connection groove 8 is fixedly connected to the surface of the connection frame 205 .

[0040] In this embodiment, by providing the connection groove 8 , the connection groove 8 can achieve the effect of connecting and fixing the connection frame 205 .

[0041] As a technical optimization solution of the present invention, connection holes 9 are opened on both sides of the connection box 5 , and the inner walls of the connection holes 9 are fixedly connected to the surface of the delivery pipe 1011 .

[0042] In this embodiment: by setting the connection hole 9, the connection hole 9 can achieve the effect of connecting and fixing the delivery pipe 1011.

[0043] Working principle: First, open the top plate 4, and then use the pull plate 301 to put the storage box 302 containing the growing large-sized silicon single crystal into the interior of the connection box 5, and then align the sealing gasket 7 with the top of the card slot 1022, and then fix the top plate 4 on the top of the connection box 5, and then use the control switch 1014 to turn on the heater 1012, and then use the adjustment knob 1015 to adjust the temperature released by the heater 1012 as needed. The first display screen 1013 can be used to observe the adjustment process, and then when the hot air transmitted by the heater 1012 enters the interior of the connection box 5 through the delivery pipe 1011, the baffle 1021 will prevent the hot air from blowing directly on the surface of the storage box 302, and then turn on the motor 201, so that The motor 201 drives the transmission rod 203 to rotate, so that the transmission rod 203 drives the fan blades 204 to rotate, and then blows away the hot air entering the connection box 5, so that the hot air is evenly diffused inside the connection box 5, and then the temperature sensor 1025 will transmit the detected temperature to the second display screen 1026, so that the temperature inside the connection box 5 is displayed on the second display screen 1026, and then when the temperature reaches an appropriate level, if the temperature inside the connection box 5 does not meet the growth requirements of large-size silicon single crystals, the warning light 1023 will issue an early warning to prompt the staff, and finally, during the growth process of large-size silicon single crystals, the observation window on the top of the top plate 4 can be used to observe the large-size silicon single crystals inside the connection box 5.

[0044] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A heat preservation structure for growing large-size silicon single crystals, comprising a connecting heating mechanism (1), a diffusion component (2), a storage component (3), a top plate (4), a connecting box (5) and a heating box (6), characterized in that: The connection heating mechanism (1) is arranged inside the heating box (6), the diffusion component (2) is arranged on the rear side of the connection box (5), the storage component (3) is arranged inside the connection box (5), the top plate (4) is clamped on the top of the connection box (5), and the connection box (5) is fixedly connected to the top of the heating box (6); The connection heating mechanism (1) comprises a heating component (101) and a connection component (102); the heating component (101) is arranged inside a heating box (6); and the connection component (102) is arranged on the front side of a connection box (5).

2. The heat preservation structure for growing large-size silicon single crystals according to claim 1, characterized in that: The heating component (101) comprises a delivery pipe (1011), a heater (1012), a first display screen (1013), a control switch (1014) and an adjusting knob (1015); the delivery pipe (1011) is fixedly connected to both sides of the heater (1012); the heater (1012) is fixedly connected to the rear side inside the heating box (6); and the first display screen (1013), the control switch (1014) and the adjusting knob (1015) are all fixedly connected to the front side of the heater (1012).

3. The heat preservation structure for growing large-size silicon single crystals according to claim 1, characterized in that: The connection assembly (102) comprises a baffle (1021), a card slot (1022), a warning light (1023), a slide slot (1024), a temperature sensor (1025) and a second display screen (1026); the baffle (1021) is fixedly connected to two sides of the interior of the connection box (5); the card slot (1022) is opened on the top of the connection box (5); the warning light (1023), the temperature sensor (1025) and the second display screen (1026) are all fixedly connected to the front side of the connection box (5); and the slide slot (1024) is opened on the front side and the rear side of the interior of the connection box (5).

4. The heat preservation structure for growing large-size silicon single crystals according to claim 1, characterized in that: The diffusion assembly (2) comprises a motor (201), a fixed box (202), a transmission rod (203), a fan blade (204) and a connecting frame (205), wherein the motor (201) is fixedly connected to the rear side of the transmission rod (203), the fixed box (202) is fixedly connected to the rear side of the connecting box (5), the transmission rod (203) is fixedly connected to the rear side of the fan blade (204), the fan blade (204) is rotatably connected to the rear side of the connecting frame (205), and the connecting frame (205) is fixedly connected to the inner wall of the connecting box (5).

5. The heat preservation structure for growing large-size silicon single crystals according to claim 1, characterized in that: The storage assembly (3) comprises a pull plate (301), a storage box (302) and a sliding rod (303); the pull plate (301) is fixedly connected to the top of the storage box (302); the storage box (302) is slidably connected to the inside of the connection box (5); and the sliding rod (303) is fixedly connected to the front and rear sides of the storage box (302).

6. The heat preservation structure for growing large-size silicon single crystals according to claim 3, characterized in that: A sealing gasket (7) is fixedly connected to the bottom of the top plate (4), and a surface of the sealing gasket (7) is snap-fitted to the inner wall of the slot (1022).

7. The heat preservation structure for growing large-size silicon single crystals according to claim 4, characterized in that: A connection groove (8) is provided on the rear side of the connection box (5), and the inner wall of the connection groove (8) is fixedly connected to the surface of the connection frame (205).

8. The heat preservation structure for growing large-size silicon single crystals according to claim 2, characterized in that: The connection box (5) is provided with connection holes (9) on both sides, and the inner walls of the connection holes (9) are fixedly connected to the surface of the delivery pipe (1011).

Citation Information

Patent Citations

  • Thermal field structure for growing large-size silicon carbide single crystal through PVT method

    CN212357456U