Flexible conductive water vapor barrier film
By using a single substrate design, flexible coating and multi-layer structure water vapor barrier layer and conductive layer in the conductive film of flexible perovskite photovoltaic cells, the problem that the conductive film is difficult to take into account the bending performance, light transmittance and water vapor barrier ability is solved, and efficient water vapor barrier and conductive properties are achieved.
Patent Information
- Application Number
- CN202421231091.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-31
- Publication Date
- 2025-03-07
- Estimated Expiration
- 2034-05-31
AI Technical Summary
The existing conductive films are difficult to take into account good bending performance, light transmittance and water vapor barrier capabilities, especially in the application of flexible perovskite photovoltaic cells.
A single substrate design is adopted, two flexible coatings are provided on both sides of the substrate, and a connecting layer and an AR enhancing layer are provided between the water vapor barrier layer and the ITO conductive layer. The water vapor barrier layer is composed of an organic and inorganic coating layer, and the AR reflective layer includes a niobium pentoxide and a silicon oxide layer.
The overall bending performance of the film is improved, the water vapor barrier rate and conductivity are improved, and the preparation process is simplified and the cost is reduced.
Smart Images
Figure CN222582907U_ABST
Abstract
Description
Technical Field
[0001] The utility model belongs to the technical field of conductive films, and in particular relates to a flexible conductive water vapor barrier film. Background Art
[0002] As a new type of photovoltaic technology, flexible perovskite photovoltaic cells also have good application prospects in the fields of wearable devices, smart phones, building integration, etc. Perovskite materials have the advantages of high efficiency, low cost, and easy preparation, making flexible perovskite photovoltaic cells a hot topic in the field of new energy. However, the electrode part needs to have good bending performance, electrical conductivity, high light transmittance, and water vapor barrier ability. The traditional preparation method is to separate the transparent electrode from the water vapor barrier layer (that is, using a double-substrate design), which is costly and does not consider the photoelectric conversion effect brought by high transmittance. That is, the existing conductive film cannot take into account good bending performance, light transmittance, and water vapor barrier ability.
[0003] The information disclosed in this background technology section is only intended to increase the understanding of the overall background of the present invention, and should not be regarded as acknowledging or suggesting in any form that the information constitutes the prior art already known to a person skilled in the art. Utility Model Content
[0004] The utility model aims to provide a flexible conductive water vapor barrier film, which can have good bending performance, conductive performance, light transmittance, and water vapor barrier ability.
[0005] In order to achieve the above-mentioned purpose, a specific embodiment of the utility model provides a flexible conductive water vapor barrier film, comprising: a substrate and a water vapor barrier layer and an ITO conductive layer arranged on two opposite sides of the substrate; a first flexible coating is arranged between the water vapor barrier layer and the substrate, and an AR anti-reflection layer is arranged on the side of the water vapor barrier layer facing away from the substrate; a second flexible coating is arranged between the ITO conductive layer and the substrate, and a connecting layer is arranged between the ITO conductive layer and the second flexible coating.
[0006] In one or more embodiments of the present invention, the water vapor barrier layer includes a first organic coating, a first inorganic coating, a second organic coating, and a second inorganic coating stacked in sequence, and the first organic coating is in contact with the first flexible coating.
[0007] In one or more embodiments of the present invention, the refractive index of the first organic coating and the second organic coating is 1.65-1.68; and / or,
[0008] The thickness of the first organic coating layer and the second organic coating layer is 1.5-2.5 μm.
[0009] In one or more embodiments of the present invention, the refractive index of the first inorganic coating and the second inorganic coating is 1.46 to 1.48; and / or,
[0010] The thickness of the first inorganic coating layer and the second inorganic coating layer is 150-200 nm.
[0011] In one or more embodiments of the present invention, the first flexible coating and the second flexible coating are both TPU flexible coatings; and / or,
[0012] The thickness of the first flexible coating layer and the second flexible coating layer is 2-5 μm.
[0013] In one or more embodiments of the present invention, the substrate is a PET substrate or a PEN substrate; and / or,
[0014] The thickness of the substrate is 45-55 μm.
[0015] In one or more embodiments of the present invention, the connecting layer is a SiO2 layer, and the thickness of the SiO2 layer is 5-10 nm.
[0016] In one or more embodiments of the present invention, the thickness of the ITO conductive layer is 80-140 nm.
[0017] In one or more embodiments of the present invention, the AR anti-reflection layer includes a first niobium pentoxide layer, a first silicon oxide layer, a second niobium pentoxide layer and a second silicon oxide layer stacked in sequence, and the first niobium pentoxide layer is bonded to the water vapor barrier layer.
[0018] In one or more embodiments of the present invention, the thickness of the first niobium pentoxide layer is 85-97 nm; and / or,
[0019] The thickness of the first silicon oxide layer is 184-195 nm; and / or,
[0020] The thickness of the second niobium pentoxide layer is 11 to 18 nm; and / or,
[0021] The thickness of the second silicon oxide layer is 106-118 nm.
[0022] Compared with the prior art, the flexible conductive water vapor barrier film of the utility model has the following beneficial effects:
[0023] (1) Simplifying the preparation process of the flexible conductive water vapor barrier film by setting a single substrate;
[0024] (2) By providing two flexible coatings on both sides of the substrate, the bending performance of the entire membrane is increased;
[0025] (3) The water vapor barrier layer can improve the water vapor barrier rate;
[0026] (4) The connecting layer can ensure that ITO can be fully crystallized in the subsequent process, ensuring that the entire film has good conductive properties, and can also improve the bonding strength between film layers to ensure that the ITO conductive layer will not fall off
[0027] (5) The AR anti-reflection layer not only plays the role of anti-reflection, but also can further improve the water vapor barrier effect. BRIEF DESCRIPTION OF THE DRAWINGS
[0028] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments or the prior art descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the utility model, and for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.
[0029] Figure 1 It is a schematic diagram of a flexible conductive water vapor barrier film in one embodiment of the utility model;
[0030] Figure 2 It is a schematic diagram of the connection structure of the water vapor barrier layer, the first flexible coating layer and the AR anti-reflection layer in one embodiment of the utility model.
[0031] Description of main reference numerals:
[0032] 1. Substrate; 2. Water vapor barrier layer; 21. First organic coating; 22. First inorganic coating; 23. Second organic coating; 24. Second inorganic coating; 3. ITO conductive layer; 4. First flexible coating; 5. AR anti-reflection layer; 51. First niobium pentoxide layer; 52. First silicon oxide layer; 53. Second niobium pentoxide layer; 54. Second silicon oxide layer; 6. Second flexible coating; 7. Connecting layer. DETAILED DESCRIPTION
[0033] In order to enable those skilled in the art to better understand the technical solutions in the present invention, the technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.
[0034] like Figure 1As shown, a flexible conductive water vapor barrier film in an example of the utility model comprises: a substrate 1 and a water vapor barrier layer 2 and an ITO conductive layer 3 arranged on two opposite sides of the substrate 1; a first flexible coating 4 is arranged between the water vapor barrier layer 2 and the substrate 1, and an AR anti-reflection layer 5 is arranged on the side of the water vapor barrier layer 2 facing away from the substrate 1; a second flexible coating 6 is arranged between the ITO conductive layer 3 and the substrate 1, and a connecting layer 7 is arranged between the ITO conductive layer 3 and the second flexible coating 6.
[0035] The flexible conductive water vapor barrier film of the utility model simplifies the preparation process of the flexible conductive water vapor barrier film by setting a single substrate 1; two flexible coatings are set on both sides of the substrate 1 to increase the bending performance of the entire film; the water vapor barrier layer 2 can improve the water vapor barrier rate; the connecting layer 7 can ensure that the ITO can be fully crystallized in the post-process, ensuring that the entire film has good conductive properties; the AR anti-reflection layer 5 not only plays the role of anti-reflection, but also can further improve the water vapor barrier effect.
[0036] like Figure 2 As shown, preferably, the water vapor barrier layer 2 includes a first organic coating 21 , a first inorganic coating 22 , a second organic coating 23 and a second inorganic coating 24 which are stacked in sequence, and the first organic coating 21 is in contact with the first flexible coating 4 .
[0037] It can be understood that the superposition of the organic coating and the inorganic coating greatly improves the water vapor barrier rate, and the first organic layer is bonded to the first flexible coating 4 so that the first organic layer also serves as a base layer, thereby increasing the adhesion of the water vapor barrier layer 2.
[0038] Specifically, the raw material of the organic coating can be selected from commonly used acrylic resins on the market, such as Sartomer CN9014HV NS. The raw material of the inorganic coating can be common silicon oxide (SiO2).
[0039] Specifically, the refractive index of the first organic coating 21 and the second organic coating 23 is 1.65-1.68; the thickness of the first organic coating 21 and the second organic coating 23 is 1.5-2.5 μm.
[0040] Specifically, the refractive index of the first inorganic coating layer 22 and the second inorganic coating layer 24 is 1.46-1.48; the thickness of the first inorganic coating layer 22 and the second inorganic coating layer 24 is 150-200 nm.
[0041] Preferably, the first flexible coating 4 and the second flexible coating 6 are both TPU flexible coatings; the thickness of the first flexible coating 4 and the second flexible coating 6 is 2-5 μm. The raw material of the TPU flexible coating can be Lubrizol X-595A-11.
[0042] Preferably, the substrate 1 is a PET substrate 1 or a PEN substrate 1; the thickness of the substrate 1 is 45-55 μm.
[0043] Preferably, the connection layer 7 is a SiO2 layer, and the thickness of the SiO2 layer is 5-10 nm.
[0044] Preferably, the thickness of the ITO conductive layer 3 is 80-140 nm. The raw material of the ITO conductive layer 3 is ITO (indium tin oxide) which can be directly purchased on the market.
[0045] like Figure 2 As shown, preferably, the AR anti-reflection layer 5 includes a first niobium pentoxide layer 51, a first silicon oxide layer 52, a second niobium pentoxide layer 53 and a second silicon oxide layer 54 which are stacked in sequence, and the first niobium pentoxide layer 51 is attached to the water vapor barrier layer 2. The raw materials of the first silicon oxide layer 52 and the second silicon oxide layer 54 can be SiO2. The raw materials of the first niobium pentoxide layer 51 and the second niobium pentoxide layer 53 can be Nb2O5.
[0046] The first silicon oxide layer 52 and the second silicon oxide layer 54 can not only cooperate with the niobium pentoxide layer to play a role in enhancing transmittance, but the first silicon oxide layer 52 and the second silicon oxide layer 54 themselves also have a water vapor barrier effect.
[0047] Specifically, the thickness of the first niobium pentoxide layer 51 is 85-97 nm; the thickness of the first silicon oxide layer 52 is 184-195 nm; the thickness of the second niobium pentoxide layer 53 is 11-18 nm; and the thickness of the second silicon oxide layer 54 is 106-118 nm.
[0048] The following is a detailed introduction to the flexible conductive water vapor barrier film of the utility model in combination with specific embodiments and comparative examples:
[0049] Example 1
[0050] A first flexible coating and a second flexible coating (both Lubrizol X-595A-11) were coated on both sides of a 50 μm PET substrate, the thickness of the first flexible coating and the second flexible coating were both 3 μm (breaking elongation 260%), a water vapor barrier layer was prepared on the first flexible coating, wherein the thickness of the first organic coating and the second organic coating (Sartomer CN9014HV NS) were both 2 μm (refractive index 1.65), the thickness of the first inorganic coating and the second inorganic coating were both 150 nm (refractive index 1.48), an AR anti-reflection layer was magnetron sputtered on the water vapor barrier layer, the thickness of Nb2O5+SiO2+Nb2O5+SiO2 were 96 nm; 195 nm; 12 nm; 115 nm respectively. The thickness of the SiO2 layer magnetron sputtered on the second flexible coating was 8 nm, and an ITO conductive layer was sputtered on the SiO2, the thickness was 128 nm.
[0051] Example 2
[0052] A first flexible coating and a second flexible coating (both Lubrizol X-595A-11) were coated on both sides of a 50 μm PEN substrate, the thickness of the first flexible coating and the second flexible coating were both 3 μm (breaking elongation 260%), a water vapor barrier layer was prepared on the first flexible coating, wherein the thickness of the first organic coating and the second organic coating (Sartomer CN9014HV NS) were both 2 μm (refractive index 1.65), the thickness of the first inorganic coating and the second inorganic coating were both 150 nm (refractive index 1.48), an AR anti-reflection layer was magnetron sputtered on the water vapor barrier layer, the thickness of Nb2O5+SiO2+Nb2O5+SiO2 were 96 nm; 195 nm; 12 nm; 115 nm respectively. The thickness of the SiO2 layer magnetron sputtered on the second flexible coating was 8 nm, and an ITO conductive layer was sputtered on the SiO2, the thickness was 128 nm.
[0053] Example 3
[0054] A first flexible coating and a second flexible coating (both Lubrizol X-595A-11) were coated on both sides of a 50 μm PET substrate, the thickness of the first flexible coating and the second flexible coating were both 4 μm (breaking elongation 260%), a water vapor barrier layer was prepared on the first flexible coating, wherein the thickness of the first organic coating and the second organic coating (Sartomer CN9014HV NS) were both 2 μm (refractive index 1.65), the thickness of the first inorganic coating and the second inorganic coating were both 150 nm (refractive index 1.48), an AR anti-reflection layer was magnetron sputtered on the water vapor barrier layer, the thickness of Nb2O5+SiO2+Nb2O5+SiO2 were 96 nm; 195 nm; 12 nm; 115 nm respectively. The thickness of the SiO2 layer magnetron sputtered on the second flexible coating was 8 nm, and an ITO conductive layer was sputtered on the SiO2, the thickness was 128 nm.
[0055] Comparative Example 1
[0056] A water vapor barrier layer was prepared on one side of a 50 μm PET substrate, wherein the thickness of the first organic coating and the second organic coating (Sartoma CN9014HV NS) were both 2 μm (refractive index 1.65), the thickness of the first inorganic coating and the second inorganic coating were both 150 nm (refractive index 1.48), and an AR anti-reflection layer was magnetron sputtered on the water vapor barrier layer, and the thicknesses of Nb2O5+SiO2+Nb2O5+SiO2 were 96 nm, 195 nm, 12 nm, and 115 nm, respectively. On the other side of the PET substrate (the side away from the water vapor barrier layer), a magnetron sputtered SiO2 layer was coated with a thickness of 8 nm, and an ITO conductive layer was sputtered on the SiO2 with a thickness of 128 nm.
[0057] Comparative Example 2
[0058] A first flexible coating and a second flexible coating (both Lubrizol X-595A-11) were coated on both sides of a 50 μm PET substrate, the thickness of the first flexible coating and the second flexible coating were both 3 μm (breaking elongation 260%), a water vapor barrier layer was prepared on the first flexible coating, wherein the thickness of the first organic coating and the second organic coating (Sartomer CN9014HV NS) were both 2 μm (refractive index 1.65), the thickness of the first inorganic coating and the second inorganic coating were both 150 nm (refractive index 1.48), an AR anti-reflection layer was magnetron sputtered on the water vapor barrier layer, the thickness of Nb2O5+SiO2+Nb2O5+SiO2 were 96 nm; 195 nm; 12 nm; 115 nm respectively. A layer of ITO conductive layer was magnetron sputtered on the second flexible coating, the thickness of which was 128 nm.
[0059] The total light transmittance, water vapor transmittance, square resistance and bending performance tests were performed on Examples 1 to 3 and Comparative Examples 1 and 2, respectively, and the data shown in the following table were obtained.
[0060] (1) Transmittance: tested using a haze meter, with reference to ASTM D1003;
[0061] (2) Water vapor transmission rate: Water vapor transmission rate tester, reference standard is GB / T 26253-2010;
[0062] (3) Square resistance: tested using a four-point probe, with reference to ASTM D991;
[0063] (4) Bending resistance: The bending radius is 3 mm, and the film is bent 100,000 times. If the square resistance change rate is less than 10%, and there is no crack on the film surface, it is OK.
[0064]
[0065]
[0066] Through the analysis of Examples 1 to 3, we can observe that whether it is a PET substrate or a PEN substrate, the proposed coating process is effective in achieving high transparency and excellent water vapor barrier performance, and has good bending resistance. Through the analysis of Comparative Example 1, the flexible coating is removed, and its bending ability is greatly reduced and the water vapor barrier ability is relatively affected. Through the analysis of Comparative Example 2, the SiO2 layer under the conductive layer is removed, which affects the ITO crystallization performance, and then affects the square resistance and transmittance.
[0067] In summary, the beneficial effects of the flexible conductive water vapor barrier film of the utility model are:
[0068] (1) Simplifying the preparation process of the flexible conductive water vapor barrier film by setting a single substrate;
[0069] (2) By providing two flexible coatings on both sides of the substrate, the bending performance of the entire membrane is increased;
[0070] (3) The method of superimposing the organic coating and the inorganic coating greatly improves the water vapor barrier rate, and the first organic layer is bonded to the first flexible coating so that the first organic layer also serves as a base layer, thereby increasing the adhesion of the water vapor barrier layer.
[0071] (4) The connecting layer (SiO2 layer) can ensure that ITO can be fully crystallized in the subsequent process, ensuring that the entire film has good conductive properties;
[0072] (5) The AR anti-reflection layer is a structure of a first niobium pentoxide layer, a first silicon oxide layer, a second niobium pentoxide layer, and a second silicon oxide layer stacked in sequence, which not only plays an anti-reflection role, but also can further improve the water vapor barrier effect.
[0073] It is obvious to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the present invention can be implemented in other specific forms without departing from the spirit or essential features of the present invention. Therefore, the embodiments should be regarded as exemplary and non-restrictive from any point of view, and the scope of the present invention is defined by the appended claims rather than the above description, and it is intended that all changes falling within the meaning and scope of the equivalent elements of the claims be included in the present invention. Any reference numeral in a claim should not be regarded as limiting the claim to which it relates.
[0074] In addition, it should be understood that although the present specification is described according to implementation modes, not every implementation mode contains only one independent technical solution. This description of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment may also be appropriately combined to form other implementation modes that can be understood by those skilled in the art.
Claims
1. A flexible conductive water vapor barrier film, characterized in that: include: A substrate and a water vapor barrier layer and an ITO conductive layer arranged on two opposite sides of the substrate; a first flexible coating is arranged between the water vapor barrier layer and the substrate, and an AR anti-reflection layer is arranged on the side of the water vapor barrier layer facing away from the substrate; a second flexible coating is arranged between the ITO conductive layer and the substrate, and a connecting layer is arranged between the ITO conductive layer and the second flexible coating.
2. The flexible conductive water vapor barrier film according to claim 1, characterized in that: The water vapor barrier layer includes a first organic coating, a first inorganic coating, a second organic coating and a second inorganic coating which are stacked in sequence, and the first organic coating is in contact with the first flexible coating.
3. The flexible conductive water vapor barrier film according to claim 2, characterized in that: The refractive index of the first organic coating and the second organic coating is 1.65 to 1.68; and / or, The thickness of the first organic coating layer and the second organic coating layer is 1.5-2.5 μm.
4. The flexible conductive water vapor barrier film according to claim 2, characterized in that: The refractive index of the first inorganic coating layer and the second inorganic coating layer is 1.46 to 1.48; and / or, The thickness of the first inorganic coating layer and the second inorganic coating layer is 150-200 nm.
5. The flexible conductive water vapor barrier film according to claim 1, characterized in that: The first flexible coating and the second flexible coating are both TPU flexible coatings; and / or, The thickness of the first flexible coating layer and the second flexible coating layer is 2-5 μm.
6. The flexible conductive water vapor barrier film according to claim 1, characterized in that: The substrate is a PET substrate or a PEN substrate; and / or, The thickness of the substrate is 45-55 μm.
7. The flexible conductive water vapor barrier film according to claim 1, characterized in that: The connecting layer is a SiO2 layer, and the thickness of the SiO2 layer is 5-10 nm.
8. The flexible conductive water vapor barrier film according to claim 1, characterized in that: The thickness of the ITO conductive layer is 80-140 nm.
9. The flexible conductive water vapor barrier film according to claim 1, characterized in that: The AR anti-reflection layer includes a first niobium pentoxide layer, a first silicon oxide layer, a second niobium pentoxide layer and a second silicon oxide layer which are stacked in sequence, and the first niobium pentoxide layer is bonded to the water vapor barrier layer.
10. The flexible conductive water vapor barrier film according to claim 9, characterized in that: The thickness of the first niobium pentoxide layer is 85 to 97 nm; and / or, The thickness of the first silicon oxide layer is 184-195 nm; and / or, The thickness of the second niobium pentoxide layer is 11 to 18 nm; and / or, The thickness of the second silicon oxide layer is 106-118 nm.