Deposition table for preparing polycrystalline diamond film
By designing and positioning grooves and annular isolation grooves on the deposition platform, isolating the substrate edges and the deposition platform body, the temperature uneven problem caused by the "edge effect" of microwave discharge is solved, and uniform temperature control and high-quality deposition of diamond films are achieved.
Patent Information
- Application Number
- CN202420634419.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-03-29
- Publication Date
- 2025-03-18
- Estimated Expiration
- 2034-03-29
AI Technical Summary
When depositing diamond films by microwave chemical vapor deposition (MPCVD), due to the "edge effect" of microwave discharge, the temperature of the deposition platform gradually decreases from the edge to the center, and the temperature difference is large, resulting in cracking or deformation of the diamond film, which is difficult to meet the requirements of the high-tech field.
A deposition platform for preparing polycrystalline diamond film is designed. By setting a positioning groove for the substrate to be placed on the top of the deposition platform body, and an annular isolation groove is provided at the bottom edge of the positioning groove to isolate the edge of the substrate from the deposition platform body, thereby avoiding the influence of the "edge effect" of microwave discharge on the substrate temperature.
It effectively avoids the uneven effect of microwave discharge on the substrate temperature, ensures that the difference between the edge temperature and the center temperature of the deposition platform and the substrate is small, and meets the temperature requirements for preparing diamond films of the same grade.
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Figure CN222631617U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of chemical vapor deposition, and in particular to a deposition platform for preparing polycrystalline diamond films. Background Art
[0002] Chemical vapor deposition (CVD) is an effective method for preparing high-quality diamond films. In particular, microwave chemical vapor deposition (MPCVD) has become the preferred option for preparing high-quality diamond films due to its advantages such as high plasma density and no electrode pollution.
[0003] However, due to the "edge effect" of microwave discharge, when depositing diamond film, the temperature of the deposition platform gradually decreases from the edge to the center, and the temperature difference can even be as high as 100 degrees, which eventually causes the prepared diamond film to crack or deform severely, making it difficult to meet the requirements of diamond film in the high-tech field, and to a certain extent limiting the engineering application of diamond film. Utility Model Content
[0004] In view of this, the purpose of the present application is to provide a deposition table for preparing polycrystalline diamond films, which can effectively avoid the influence of the "edge effect" of microwave discharge on the substrate temperature and ensure that the edge temperature and center temperature difference of the deposition table and the substrate are small.
[0005] To achieve the above technical objectives, the present application provides a deposition platform for preparing a polycrystalline diamond film, including a deposition platform body;
[0006] The top of the deposition platform body is provided with a positioning groove for placing the substrate;
[0007] The bottom edge of the groove is provided with an annular isolation groove;
[0008] The annular isolation groove is used to isolate the edge of the substrate placed in the positioning groove from the deposition platform body.
[0009] Furthermore, there are multiple positioning grooves, which are arranged in steps from top to bottom.
[0010] Furthermore, there are three positioning grooves, which are circular grooves;
[0011] The diameter of the positioning groove located at the top is 6 mm to 8 mm larger than the diameter of the substrate, and the depth is 0.3 mm to 0.5 mm;
[0012] The diameter of the positioning groove in the middle is 1 mm to 2 mm larger than the diameter of the substrate, and the depth is 0.3 mm to 0.6 mm;
[0013] The diameter of the positioning groove at the bottom is 0.5 mm to 1 mm larger than the diameter of the substrate, and the depth is 0.3 mm to 0.4 mm;
[0014] The annular isolation groove has a width of 1 mm to 2 mm and a depth of 0.1 mm to 0.15 mm.
[0015] Furthermore, the thickness of the substrate is less than the sum of the thicknesses of the positioning grooves, and when the substrate is placed in one of the positioning grooves, the top surface of the substrate is lower than the top surface of the deposition table body.
[0016] Furthermore, the deposition platform is cylindrical or truncated cone-shaped.
[0017] Furthermore, the deposition platform has a diameter at least 10 mm greater than the diameter of the substrate and a height of 15 mm to 25 mm.
[0018] It can be seen from the above technical scheme that the deposition platform designed in this application for preparing polycrystalline diamond film has a positioning groove for placing the substrate on the top of the deposition platform body to achieve the positioning and installation of the substrate, and then the edge of the placed substrate is isolated from the deposition platform body through the annular isolation groove at the bottom edge of the positioning groove to prevent the edge of the substrate from contacting the deposition platform body. This effectively avoids the influence of the "edge effect" of microwave discharge on the substrate temperature, ensures that the edge temperature of the deposition platform and the substrate is less than the center temperature, and meets the temperature requirements for preparing the same grade of diamond film. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.
[0020] Figure 1 A top view of a deposition table for preparing a polycrystalline diamond film provided in the present application;
[0021] Figure 2 for Figure 1 AA section view;
[0022] Figure 3 for Figure 2 A magnified schematic diagram of position A;
[0023] In the figure: 1. deposition table body; 11. positioning groove; 12. annular isolation groove; 2. substrate. DETAILED DESCRIPTION
[0024] The technical solutions of the embodiments of the present application will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present application, not all of them. All other embodiments obtained by ordinary technicians in this field without creative work based on the embodiments in the embodiments of the present application are within the scope of protection of the embodiments of the present application.
[0025] In the description of the embodiments of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, which are only for the convenience of describing the embodiments of the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the embodiments of the present application. In addition, the terms "first", "second", and "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.
[0026] In the description of the embodiments of the present application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a replaceable connection, or an integral connection, it can be a mechanical connection, it can be an electrical connection, it can be a direct connection, it can be indirectly connected through an intermediate medium, and it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the embodiments of the present application can be understood according to specific circumstances.
[0027] The embodiment of the present application discloses a deposition platform for preparing a polycrystalline diamond film.
[0028] See also Figure 1 , an embodiment of a deposition platform for preparing a polycrystalline diamond film provided in the embodiments of the present application comprises:
[0029] Deposition table body 1.
[0030] A positioning groove 11 is provided on the top of the deposition table body 1 for placing the substrate 2. The positioning groove 11 is designed to be larger than the substrate 2 to ensure that the substrate 2 can be normally placed. The substrate 2 can be a silicon wafer, which is not limited.
[0031] An annular isolation groove 12 is provided at the bottom edge of the groove, and the annular isolation groove 12 is used to isolate the edge of the substrate 2 placed in the positioning groove 11 from the deposition platform body 1.
[0032] The deposition platform designed in the present application for preparing polycrystalline diamond film has a positioning groove 11 for placing the substrate 2 on the top of the deposition platform body 1, so as to realize the positioning and installation of the substrate 2, and then the edge of the placed substrate 2 is isolated from the deposition platform body 1 through the annular isolation groove 12 at the bottom edge of the positioning groove 11, so as to prevent the edge of the substrate 2 from contacting the deposition platform body 1. Thus, the influence of the "edge effect" of microwave discharge on the temperature of the substrate 2 is effectively avoided, and the difference between the edge temperature and the center temperature of the deposition platform and the substrate 2 is ensured to be small, so as to meet the temperature requirements for preparing diamond films of the same grade.
[0033] The above is an embodiment of a deposition platform for preparing a polycrystalline diamond film provided in the embodiment of the present application. The following is an embodiment of a deposition platform for preparing a polycrystalline diamond film provided in the embodiment of the present application. For details, please refer to Figures 1 to 3 .
[0034] Based on the solution of the above embodiment 1:
[0035] Furthermore, the positioning grooves 11 can be designed to be multiple and arranged in a stepped manner from top to bottom. The sizes of the multiple positioning grooves 11 gradually decrease from top to bottom, forming a stepped distribution design, which can meet the positioning requirements of substrates 2 of different sizes to improve applicability.
[0036] The bottom edge of each positioning groove 11 is provided with an annular isolation groove 12 to ensure that the edge of the placed substrate 2 can be separated from the deposition platform body 1 .
[0037] Of course, there may also be a design in which, except for the annular isolation groove 12 provided on the bottom edge of the lowest positioning groove 11, the other positioning grooves 11 are not provided with annular isolation grooves 12, that is, only the lowest positioning groove 11 is used to insert the substrate 2, while the other positioning grooves 11 play a positioning role, making it convenient for the substrate 2 to be placed in the lowest positioning groove 11.
[0038] Furthermore, the positioning grooves 11 can be specifically designed to be three, and all of them are circular grooves, that is, the substrate 2 is a circular substrate 2, and the specific shape can be changed and designed according to the shape of the substrate 2 without limitation.
[0039] The diameter D1 of the uppermost positioning groove 11 is designed to be larger than the diameter d1 of the substrate 2 by 6 mm to 8 mm, and the depth H1 is 0.3 mm to 0.5 mm.
[0040] The diameter D2 of the positioning groove 11 in the middle is designed to be larger than the diameter d1mm~2mm of the substrate 2, and the depth H2 is 0.3mm~0.6mm.
[0041] The diameter D3 of the positioning groove 11 at the bottom is designed to be larger than the diameter d of the substrate 2 by 0.5 mm to 1 mm, and the depth H3 is 0.3 mm to 0.4 mm.
[0042] The width W of the annular isolation groove 12 is designed to be 1 mm to 2 mm, and the depth H4 is designed to be 0.1 mm to 0.15 mm.
[0043] Furthermore, the thickness H5 of the substrate 2 is less than the sum of the positioning grooves 11, that is, H5<H3+H2+H1, and when the substrate 2 is placed in a positioning groove 11, the top surface of the substrate 2 is lower than the top surface of the deposition platform body 1, and the difference between the thickness of the substrate 2 and the sum of the thickness of the positioning grooves 11 can be adjusted based on previous work experience combined with simulation software simulation. It is understandable that when the substrate 2 is placed in any positioning groove 11, it will not be higher than the top surface of the deposition platform body 1, ensuring a better deposition effect. At the same time, this design can effectively optimize the electric field distribution above the deposition platform body 1, greatly reducing the influence of the "edge effect" of microwave discharge on the temperature of the substrate 2.
[0044] Furthermore, the deposition platform can be designed to be cylindrical or truncated cone-shaped, without any specific limitation.
[0045] Furthermore, the diameter of the deposition platform is at least 10 mm greater than the diameter of the substrate 2 to ensure that there is a blocked position for setting the positioning groove 11, and the height is designed to be 15 mm-25 mm. Those skilled in the art can make changes in the design according to actual needs, and there is no specific limitation.
[0046] The above is a detailed introduction to a deposition table for preparing polycrystalline diamond films provided in the present application. For a person skilled in the art, according to the ideas of the embodiments of the present application, there may be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as limiting the present application.
Claims
1. A deposition table for preparing a polycrystalline diamond film, characterized in that: It comprises a deposition platform body (1); The top of the deposition platform body (1) is provided with a positioning groove (11) for the substrate (2) to be placed therein; An annular isolation groove (12) is provided at the bottom edge of the groove; The annular isolation groove (12) is used to isolate the edge of the substrate (2) placed in the positioning groove (11) from the deposition platform body (1).
2. A deposition table for preparing a polycrystalline diamond film according to claim 1, characterized in that: The positioning grooves (11) are multiple and arranged in steps from top to bottom.
3. A deposition table for preparing a polycrystalline diamond film according to claim 2, characterized in that: There are three positioning grooves (11), which are circular grooves; The diameter of the positioning groove (11) located at the top is 6 mm to 8 mm larger than the diameter of the substrate (2), and the depth is 0.3 mm to 0.5 mm; The diameter of the positioning groove (11) located in the middle is 1 mm to 2 mm larger than the diameter of the substrate (2), and the depth is 0.3 mm to 0.6 mm; The diameter of the positioning groove (11) located at the bottom is 0.5 mm to 1 mm larger than the diameter of the substrate (2), and the depth is 0.3 mm to 0.4 mm; The annular isolation groove (12) has a width of 1 mm to 2 mm and a depth of 0.1 mm to 0.15 mm.
4. A deposition table for preparing a polycrystalline diamond film according to claim 3, characterized in that: The thickness of the substrate (2) is less than the sum of the thicknesses of the positioning grooves (11), and when the substrate (2) is placed in one of the positioning grooves (11), the top surface of the substrate (2) is lower than the top surface of the deposition platform body (1).
5. A deposition table for preparing a polycrystalline diamond film according to claim 1, characterized in that: The deposition platform is cylindrical or truncated cone-shaped.
6. A deposition table for preparing a polycrystalline diamond film according to claim 1, characterized in that: The deposition platform has a diameter at least 10 mm greater than the diameter of the substrate (2) and a height of 15 mm to 25 mm.
Citation Information
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