Gallium nitride charger heat dissipation structure of integrated charging and inversion bidirectional power supply

Abstract

The utility model discloses a gallium nitride charger heat dissipation structure integrating a charging and inversion bidirectional power supply, which comprises a gallium nitride circuit board assembly and a charger heat dissipation frame, the gallium nitride circuit board assembly is detachably connected with the charger heat dissipation frame, the charger heat dissipation frame comprises a heat dissipation substrate and an annular heat dissipation frame, and the annular heat dissipation frame is detachably connected with the gallium nitride circuit board assembly. A heat dissipation space is formed between the annular heat dissipation frame and the heat dissipation substrate, and the gallium nitride circuit board assembly is installed in the heat dissipation space. According to the utility model, the gallium nitride circuit board assembly is installed in the heat dissipation space of the charger heat dissipation frame, so that the heat dissipation performance of the gallium nitride circuit board assembly can be effectively improved, and the heat dissipation performance of the gallium nitride charger is further effectively improved.

Description

Technical Field

[0001] The utility model relates to a charger, in particular to a gallium nitride charger heat dissipation structure integrating charging and inverting bidirectional power supply. Background Art

[0002] With the popularity of mobile devices and the rapid development of electric vehicles, the demand for charging speed and efficiency is also increasing. The gallium nitride charger market has shown a sustained growth trend in recent years. Compared with traditional silicon-based chargers, the third-generation semiconductor chargers of gallium nitride chargers have higher power density, which means that they can provide greater power output in the same volume. However, the current gallium nitride chargers are poor in heat dissipation, so they need to be improved. Summary of the invention

[0003] The utility model aims at the defects of the gallium nitride charger in the prior art, such as poor heat dissipation, and provides a new heat dissipation structure of the gallium nitride charger with integrated charging and inverter bidirectional power supply.

[0004] In order to solve the above technical problems, the utility model is implemented through the following technical solutions:

[0005] A gallium nitride charger heat dissipation structure with integrated charging and inverter bidirectional power supply comprises a gallium nitride circuit board assembly and a charger heat dissipation frame, wherein the gallium nitride circuit board assembly is detachably connected to the charger heat dissipation frame, the charger heat dissipation frame comprises a heat dissipation base and an annular heat dissipation frame, a heat dissipation space is formed between the annular heat dissipation frame and the heat dissipation base, and the gallium nitride circuit board assembly is installed in the heat dissipation space.

[0006] The utility model can effectively improve the heat dissipation performance of the gallium nitride circuit board assembly by installing the gallium nitride circuit board assembly in the heat dissipation space of the charger heat dissipation frame, thereby effectively improving the heat dissipation performance of the gallium nitride charger.

[0007] Preferably, in the above-mentioned gallium nitride charger heat dissipation structure with integrated charging and inverter bidirectional power supply, the gallium nitride circuit board assembly includes a circuit board and a power transformer, the lower surface of the circuit board cooperates with the upper surface of the heat dissipation substrate, and the power transformer cooperates with the annular heat dissipation frame.

[0008] By cooperating the circuit board with the heat dissipation base, and the power transformer with the annular heat dissipation frame, the heat dissipation performance of the gallium nitride circuit board assembly can be effectively improved.

[0009] Preferably, in the above-mentioned gallium nitride charger heat dissipation structure with integrated charging and inverter bidirectional power supply, at least four semiconductor components are distributed on the lower surface of the circuit board, and a contact substrate is provided at a position on the upper surface of the heat dissipation substrate corresponding to the semiconductor components, and the semiconductor components and the contact substrate cooperate with each other.

[0010] The provision of a contact substrate can effectively improve the heat dissipation performance of semiconductor components to prevent the semiconductor components from overheating.

[0011] Preferably, in the above-mentioned gallium nitride charger heat dissipation structure with integrated charging and inverter bidirectional power supply, when the semiconductor component cooperates with the contact substrate, a heat dissipation gap is formed between the lower surface of the circuit board and the upper surface of the heat dissipation substrate.

[0012] The provision of the heat dissipation gap can prevent the circuit board from directly contacting the heat dissipation substrate, thereby effectively improving the heat dissipation performance of the circuit board.

[0013] Preferably, in the above-mentioned gallium nitride charger heat dissipation structure integrating charging and inverter bidirectional power supply, the lower surface of the heat dissipation substrate is provided with a first heat dissipation rib.

[0014] The first heat dissipation ribs can further improve the heat dissipation performance of the heat dissipation substrate.

[0015] Preferably, in the above-mentioned gallium nitride charger heat dissipation structure with integrated charging and inverter bidirectional power supply, the upper surface of the annular heat dissipation frame is provided with second heat dissipation ribs.

[0016] The second heat dissipation ribs can further improve the heat dissipation performance of the annular heat dissipation frame. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 This is a schematic diagram of the structure of the heat dissipation frame of the charger of the utility model;

[0018] Figure 2 This is a schematic diagram of the structure of the gallium nitride circuit board assembly of the utility model. DETAILED DESCRIPTION

[0019] The following is combined with Figure 1-2 The present invention is further described in detail with the following specific embodiments, but they are not intended to limit the present invention:

[0020] Example 1

[0021] like Figure 1 , Figure 2As shown, a gallium nitride charger heat dissipation structure with integrated charging and inverter bidirectional power supply includes a gallium nitride circuit board assembly 1 and a charger heat dissipation frame 2, wherein the gallium nitride circuit board assembly 1 is detachably connected to the charger heat dissipation frame 2, and the charger heat dissipation frame 2 includes a heat dissipation base 21 and an annular heat dissipation frame 22, a heat dissipation space 3 is formed between the annular heat dissipation frame 22 and the heat dissipation base 21, and the gallium nitride circuit board assembly 1 is installed in the heat dissipation space 3.

[0022] Specifically, the charger heat dissipation frame is made of aluminum alloy material, and aluminum alloy heat dissipation material has the advantages of high thermal conductivity, low density, light weight, corrosion resistance, good heat dissipation effect and low cost.

[0023] Preferably, the gallium nitride circuit board assembly 1 includes a circuit board 11 and a power transformer 12 , the lower surface of the circuit board 11 cooperates with the upper surface of the heat dissipation base 21 , and the power transformer 12 cooperates with the annular heat dissipation frame 22 .

[0024] Preferably, at least four semiconductor components 111 are distributed on the lower surface of the circuit board 11 , and a contact base 211 is provided on the upper surface of the heat dissipation base 21 at a position corresponding to the semiconductor components 111 , and the semiconductor components 111 and the contact base 211 cooperate with each other.

[0025] Specifically, during use, the contact substrate 211 needs to be coated with silicone grease first, so that the heat dissipation performance of the semiconductor component 111 is improved;

[0026] More specifically, the semiconductor component 111 includes an input current rectifying diode, a gallium nitride MOS tube, an output rectifying diode and an anti-reverse connection MOS tube.

[0027] Preferably, when the semiconductor component 111 cooperates with the contact base 211 , a heat dissipation gap is formed between the lower surface of the circuit board 11 and the upper surface of the heat dissipation base 21 .

[0028] Specifically, during use, heat dissipation glue needs to be poured into the heat dissipation gap, so that the heat generated by the circuit board 11 can be effectively introduced to the heat dissipation base 21 for heat dissipation through the heat dissipation glue.

[0029] Preferably, the lower surface of the heat dissipation base 21 is provided with first heat dissipation ribs 212 .

[0030] Preferably, the upper surface of the annular heat dissipation frame 22 is provided with second heat dissipation ribs 221 .

[0031] In conclusion, the above is only a preferred embodiment of the present invention, and all equivalent changes and modifications made within the scope of the patent application for the present invention should fall within the scope of the present invention.

Claims

1. A gallium nitride charger heat dissipation structure integrating charging and inverter bidirectional power supply, comprising a gallium nitride circuit board assembly (1) and a charger heat dissipation frame (2), wherein the gallium nitride circuit board assembly (1) is detachably connected to the charger heat dissipation frame (2), and is characterized in that: The charger heat dissipation frame (2) comprises a heat dissipation base (21) and an annular heat dissipation frame (22), a heat dissipation space (3) is formed between the annular heat dissipation frame (22) and the heat dissipation base (21), and the gallium nitride circuit board assembly (1) is installed in the heat dissipation space (3).

2. The heat dissipation structure of a gallium nitride charger with integrated charging and inverter bidirectional power supply according to claim 1, characterized in that: The gallium nitride circuit board assembly (1) comprises a circuit board (11) and a power transformer (12); the lower surface of the circuit board (11) cooperates with the upper surface of the heat dissipation base (21); and the power transformer (12) cooperates with the annular heat dissipation frame (22).

3. The heat dissipation structure of a gallium nitride charger with integrated charging and inverter bidirectional power supply according to claim 2, characterized in that: At least four semiconductor components (111) are distributed on the lower surface of the circuit board (11), a contact base (211) is provided on the upper surface of the heat dissipation base (21) at a position corresponding to the semiconductor components (111), and the semiconductor components (111) and the contact base (211) cooperate with each other.

4. The heat dissipation structure of a gallium nitride charger with integrated charging and inverter bidirectional power supply according to claim 3, characterized in that: When the semiconductor component (111) cooperates with the contact base (211), a heat dissipation gap is formed between the lower surface of the circuit board (11) and the upper surface of the heat dissipation base (21).

5. The heat dissipation structure of a gallium nitride charger with integrated charging and inverter bidirectional power supply according to claim 1, characterized in that: The lower surface of the heat dissipation base (21) is provided with first heat dissipation ribs (212).

6. The heat dissipation structure of a gallium nitride charger with integrated charging and inverter bidirectional power supply according to claim 1, characterized in that: The upper surface of the annular heat dissipation frame (22) is provided with second heat dissipation ribs (221).

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