Power module with low stray inductance

By symmetrically setting the upper and lower bridge arm units and setting an overlapping part between the positive and negative electrode power terminals, the stray inductance in the power module is reduced, and the problems of voltage overshoot and oscillation in the traditional module during the switching of high-frequency silicon carbide chips are solved, and the performance and reliability of the module are improved.

CN222653955UActive Publication Date: 2025-03-21JIANGSU SOLID POWER SEMICON CO LTD
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Patent Information

Application Number
CN202421408102.2
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-06-19
Publication Date
2025-03-21
Estimated Expiration
2034-06-19

AI Technical Summary

Technical Problem

Traditional power modules are prone to voltage overshoot and oscillation during the switching of high-frequency silicon carbide chips, resulting in electromagnetic interference and high power consumption.

Method used

A power module with low stray inductance is designed, and a spilling portion is provided between the positive electrode power terminal and the negative electrode power terminal to offset the magnetic field, thereby reducing the stray inductance.

Benefits of technology

It effectively reduces stray inductance in the power module, reduces the generation and output of high-power electromagnetic interference, and improves the performance and reliability of the power module.

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Abstract

The utility model discloses a power module with low stray inductance, which relates to the technical field of power modules and comprises a supporting substrate, an upper bridge arm unit and a lower bridge arm unit, and the upper bridge arm unit and the lower bridge arm unit are symmetrically arranged on the supporting substrate. The upper bridge arm unit comprises an upper bridge DBC substrate, the lower bridge arm unit comprises a lower bridge DBC substrate, and the upper bridge DBC substrate is electrically connected with the lower bridge DBC substrate; a positive power terminal is bonded on the upper bridge DBC substrate, a negative power terminal matched with the positive power terminal is bonded on the lower bridge DBC substrate, and the negative power terminal is adjacent to the positive power terminal and is overlapped with the positive power terminal. The power module can effectively reduce stray inductance and has high reliability.
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