Metal sputtering device for manufacturing drain-source electrode of silicon carbide-based chip

Abstract

The utility model discloses a metal sputtering device for manufacturing drain-source electrodes of a silicon carbide-based chip, which comprises a base, the upper surface of the base is fixedly connected with a vacuum chamber, the upper surface of the vacuum chamber is fixedly connected with a radio-frequency power supply, the upper surface of the vacuum chamber is fixedly communicated with a water-cooling sleeve, and the water-cooling sleeve is fixedly communicated with the base. The bottom surface of the water cooling sleeve is fixedly connected with a back plate, the bottom surface of the back plate is fixedly connected with a target material, the bottom surface of the vacuum chamber is fixedly connected with a driving motor, the output end of the driving motor is fixedly connected with a rotating shaft, the outer surface of the rotating shaft is fixedly connected with a bearing seat, and the upper surface of the rotating shaft is fixedly connected with a clamping device. According to the device, the thickness difference of a deposited film can be reduced and the thickness uniformity of the film can be improved by rotating the substrate, and when the magnetron sputtering gun is fixed, the metal film can be more uniformly deposited on the surface of the substrate by the rotating substrate, so that defects, inclusions and non-uniformity in the film can be reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor manufacturing, in particular to a metal sputtering device for manufacturing drain-source electrodes of silicon carbide-based chips. Background Art

[0002] The metal sputtering device used to manufacture drain and source electrodes of silicon carbide-based chips is a key equipment used to form chip electrodes in the semiconductor manufacturing process. This device deposits metal film on the surface of silicon carbide-based chips through magnetron sputtering technology to form drain and source electrodes. Magnetron sputtering is a technology that uses a magnetic field to control charged particles (such as argon ions) to bombard the target material, so that atoms or molecules on the target material are sputtered out. This process is carried out in a vacuum environment to ensure the quality and purity of the metal film.

[0003] Silicon carbide-based chip is a new type of semiconductor device with high breakdown voltage, high thermal conductivity and good chemical stability. In the manufacturing process of silicon carbide-based chips, the manufacture of drain-source electrodes is a very important step because it directly affects the performance of the chip. Traditional manufacturing methods often have some problems, such as low target utilization and uneven film thickness. Low target utilization means that during the sputtering process, a large amount of target material is not effectively transferred to the substrate, but is lost in the sputtering chamber in the form of dust or gas, which not only increases production costs, but also leads to waste of rare or expensive materials. Uneven film thickness can lead to unstable performance of silicon carbide-based chips. In some areas, the film will be too thin, affecting the conductivity and connection quality of the electrode; in other areas, the film will be too thick, increasing resistance and causing short circuits or thermal management problems. To this end, we propose a metal sputtering device for manufacturing drain-source electrodes for silicon carbide-based chips to solve the above problems. Utility Model Content

[0004] The utility model aims to provide a metal sputtering device for manufacturing drain-source electrodes of silicon carbide-based chips, so as to solve the problems raised in the above-mentioned background technology.

[0005] In order to achieve the above purpose, the utility model provides the following technical solutions:

[0006] A metal sputtering device for manufacturing drain-source electrodes of silicon carbide-based chips, comprising a base, the upper surface of the base is fixedly connected to a vacuum chamber, the upper surface of the vacuum chamber is fixedly connected to a radio frequency power supply, the upper surface of the vacuum chamber is fixedly connected to a water-cooling sleeve, the bottom surface of the water-cooling sleeve is fixedly connected to a back plate, the bottom surface of the back plate is fixedly connected to a target material, the bottom surface of the vacuum chamber is fixedly connected to a driving motor, the output end of the driving motor is fixedly connected to a rotating shaft, the outer surface of the rotating shaft is fixedly connected to a bearing seat, the upper surface of the rotating shaft is fixedly connected to a clamp, the upper surface of the clamp is provided with two slide grooves, the inner walls of the two slide grooves are slidably connected to two electric sliders, and the side of each electric slider close to each other is fixedly connected to two clamping plates, the top of the inner wall of the vacuum chamber is fixedly connected to a flange, the bottom surface of the flange is fixedly connected to a magnet, and the upper surface of the clamp is fixedly connected to a base.

[0007] In a further embodiment, four observation windows are fixedly connected to the outer surface of the vacuum chamber, and each of the observation windows is made of transparent glass.

[0008] In a further embodiment, the upper surface of the vacuum chamber is fixedly connected to a gas outlet, and the upper surface of the gas outlet is threadedly connected to a valve.

[0009] In a further embodiment, a vacuum gauge is fixedly connected to the upper surface of the vacuum chamber, and an air inlet pipe is fixedly connected to the right side of the vacuum chamber.

[0010] In a further embodiment, four supporting legs are fixedly connected to the bottom surface of the vacuum chamber, and a supporting foot is fixedly connected to the bottom surface of each supporting leg.

[0011] In a further embodiment, a cover is fixedly connected to the bottom surface of the vacuum chamber, and a cover plate is fixedly connected to the bottom surface of the cover.

[0012] In a further embodiment, four fixing bolts are threadedly connected to the bottom surface of the cover plate, and a group of heat dissipation grooves are opened on the bottom surface of the hood.

[0013] Compared with the prior art, the beneficial effects of the utility model are:

[0014] The device places the prepared substrate on the clamp, turns on the drive motor, and drives the rotating shaft to drive the clamp and the substrate to rotate. During the sputtering process, as the thickness of the deposited film increases, the distribution of sputtered particles on the substrate surface becomes uneven. By rotating the substrate, the difference in the thickness of the deposited film can be reduced and the uniformity of the film thickness can be improved. When the magnetron sputtering gun is fixed, the rotating substrate can make the metal film more evenly deposited on the substrate surface, which helps to reduce defects, inclusions and non-uniformity in the film and improve the quality and performance of the film.

[0015] This device turns on the RF power supply, sets the required sputtering power, frequency and other parameters, and uses a magnet to generate a magnetic field to ionize the atoms on the surface of the target material. The ionized atoms collide with the surface of the substrate and are deposited as a metal film there. By adjusting the parameters of the RF power supply, the magnetic field can be made to act more evenly on the surface of the target material, thereby improving the uniformity of the distribution of the sputtered atoms on the surface of the substrate, which helps to form a more uniform film layer and improve the performance of silicon carbide-based chips. Precise control of parameters such as sputtering power and frequency can reduce target waste and improve target utilization, which helps to reduce the production cost of metal sputtering devices and improve economic benefits. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 This is a schematic diagram of the three-dimensional structure of a metal sputtering device for manufacturing drain-source electrodes of a silicon carbide-based chip according to the utility model;

[0017] Figure 2 This is a schematic diagram of a three-dimensional structure from an upward angle of a metal sputtering device for manufacturing drain-source electrodes of a silicon carbide-based chip according to the utility model;

[0018] Figure 3 This is a schematic diagram of the top-section structure of a metal sputtering device for manufacturing drain-source electrodes of a silicon carbide-based chip according to the utility model;

[0019] Figure 4 The utility model is a schematic diagram of the front cross-section structure of a metal sputtering device for manufacturing drain-source electrodes of a silicon carbide-based chip.

[0020] In the figure: 1. base; 2. vacuum chamber; 3. observation window; 4. RF power supply; 5. air outlet; 6. valve; 7. water cooling sleeve; 8. vacuum gauge; 9. support leg; 10. hood; 11. cover plate; 12. fixing bolt; 13. heat sink; 14. support foot; 15. clamp; 16. slide; 17. clamp; 18. electric slider; 19. air inlet pipe; 20. base; 21. flange; 22. magnet; 23. back plate; 24. target; 25. drive motor; 26. rotating shaft; 27. bearing seat. DETAILED DESCRIPTION

[0021] In the description of the present utility model, it should be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present utility model. In addition, the terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, features defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of the present utility model, unless otherwise specified, "multiple" means two or more.

[0022] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood by specific circumstances.

[0023] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0024] See also Figure 1-4In the utility model, a metal sputtering device for manufacturing drain-source electrodes of silicon carbide-based chips comprises a base 1, a vacuum chamber 2 is fixedly connected to the upper surface of the base 1, a radio frequency power supply 4 is fixedly connected to the upper surface of the vacuum chamber 2, a water cooling sleeve 7 is fixedly connected to the upper surface of the vacuum chamber 2, a back plate 23 is fixedly connected to the bottom surface of the water cooling sleeve 7, a target material 24 is fixedly connected to the bottom surface of the back plate 23, a driving motor 25 is fixedly connected to the bottom surface of the vacuum chamber 2, and a rotating shaft 26 is fixedly connected to the output end of the driving motor 25. The outer surface of the shaft 26 is fixedly connected to a bearing seat 27, the upper surface of the rotating shaft 26 is fixedly connected to a clamper 15, the upper surface of the clamper 15 is provided with two slide grooves 16, the inner walls of the two slide grooves 16 are slidably connected to two electric sliders 18, and the side surfaces of each electric slider 18 close to each other are fixedly connected to two clamping plates 17, the top of the inner wall of the vacuum chamber 2 is fixedly connected to a flange 21, the bottom surface of the flange 21 is fixedly connected to a magnet 22, and the upper surface of the clamper 15 is fixedly connected to a base 20.

[0025] In this embodiment, four observation windows 3 are fixedly connected to the outer surface of the vacuum chamber 2. The observation windows 3 enable the operator to directly observe the sputtering process, thereby monitoring the deposition quality and process stability of the metal film in real time, which helps to adjust the sputtering parameters in time and ensure that the sputtering process is in the best state. The material of each observation window 3 is transparent glass.

[0026] In this embodiment, the upper surface of the vacuum chamber 2 is fixedly connected to a gas outlet 5, and the upper surface of the gas outlet 5 is threadedly connected to a valve 6. The valve 6 can accurately control the gas flow rate flowing out of the sputtering device, including the sputtering gas and the gas discharged during vacuuming. This can ensure that the gas pressure and flow rate during the sputtering process are in an optimal state, thereby affecting the sputtering efficiency and the film quality.

[0027] In this embodiment, a vacuum gauge 8 is fixedly connected to the upper surface of the vacuum chamber 2. The vacuum gauge 8 is used to measure the pressure in the vacuum chamber 2 in real time to ensure that the sputtering process is carried out under the required vacuum environment, which is crucial to ensure the quality and uniformity of the sputtered film. The right side of the vacuum chamber 2 is fixedly connected to an air inlet pipe 19.

[0028] In this embodiment, four support legs 9 are fixedly connected to the bottom surface of the vacuum chamber 2. The support legs 9 provide stable support for the sputtering device and increase the rigidity and stability of the overall structure, which helps to reduce film defects caused by mechanical vibration during the sputtering process and improve the sputtering quality. The bottom surface of each support leg 9 is fixedly connected to a support foot 14.

[0029] In this embodiment, a hood 10 is fixedly connected to the bottom surface of the vacuum chamber 2. The hood 10 can protect the driving motor 25 in the sputtering device from the influence of the external environment (such as dust, moisture, chemical corrosion, etc.), extend the service life of the driving motor 25, and ensure its stable operation. A cover plate 11 is fixedly connected to the bottom surface of the hood 10.

[0030] In this embodiment, four fixing bolts 12 are threadedly connected to the bottom surface of the cover plate 11, and a group of heat dissipation grooves 13 are opened on the bottom surface of the hood 10. The heat dissipation grooves 13 can increase the heat dissipation area of ​​the bottom surface of the hood 10 and provide more heat dissipation channels, thereby improving the heat dissipation efficiency and reducing the heat generated by the drive motor 25 during operation.

[0031] The working principle of the utility model is:

[0032] First, connect the vacuum pump through the air inlet pipe 19, start evacuation, so that the air pressure in the vacuum chamber 2 reaches the required range, place the prepared substrate 20 on the clamp 15 to ensure that it is firmly positioned, adjust the clamp 15 to make the position of the surface of the substrate 20 and the target 24 meet the requirements, turn on the RF power supply 4, set the required sputtering power, frequency and other parameters, the magnet 22 generates a magnetic field, ionizes the atoms on the surface of the target 24, and the ionized atoms collide with the surface of the substrate 20 and are deposited as a metal film there, turn on the drive motor 25, drive the rotating shaft 26 to drive the clamp 15 and the substrate 20 to rotate, the water-cooling sleeve 7 cools the target 24 to prevent the target 24 from being overheated and damaged, when the preset sputtering time or film thickness is reached, turn off the RF power supply 4, turn off the magnetic field of the magnet 22, stop the ionization of the atoms of the target 24, continue to evacuate for a period of time to ensure that the air pressure in the vacuum chamber 2 is restored to atmospheric pressure, and finally open the vacuum chamber 2 and take out the substrate 20.

[0033] It is obvious to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the present invention can be implemented in other specific forms without departing from the spirit or essential features of the present invention. Therefore, the embodiments should be regarded as exemplary and non-restrictive from any point of view, and the scope of the present invention is defined by the appended claims rather than the above description, and it is intended that all changes falling within the meaning and scope of the equivalent elements of the claims be included in the present invention. Any reference numeral in a claim should not be regarded as limiting the claim to which it relates.

[0034] In addition, it should be understood that although the present specification is described according to implementation modes, not every implementation mode contains only one independent technical solution. This description of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment may also be appropriately combined to form other implementation modes that can be understood by those skilled in the art.

Claims

1. A metal sputtering device for manufacturing drain-source electrodes of silicon carbide-based chips, comprising a base (1), characterized in that: The upper surface of the base (1) is fixedly connected to a vacuum chamber (2), the upper surface of the vacuum chamber (2) is fixedly connected to a radio frequency power supply (4), the upper surface of the vacuum chamber (2) is fixedly connected to a water cooling sleeve (7), the bottom surface of the water cooling sleeve (7) is fixedly connected to a back plate (23), the bottom surface of the back plate (23) is fixedly connected to a target material (24), the bottom surface of the vacuum chamber (2) is fixedly connected to a drive motor (25), the output end of the drive motor (25) is fixedly connected to a rotating shaft (26), and the outer surface of the rotating shaft (26) is fixedly connected to a bearing seat (2 7), a clamp (15) is fixedly connected to the upper surface of the rotating shaft (26), two slide grooves (16) are provided on the upper surface of the clamp (15), two electric sliders (18) are slidably connected to the inner walls of the two slide grooves (16), two clamping plates (17) are fixedly connected to the side surfaces of each electric slider (18) close to each other, a flange (21) is fixedly connected to the top of the inner wall of the vacuum chamber (2), a magnet (22) is fixedly connected to the bottom surface of the flange (21), and a base (20) is fixedly connected to the upper surface of the clamp (15).

2. A metal sputtering device for manufacturing drain-source electrodes of a silicon carbide-based chip according to claim 1, characterized in that: Four observation windows (3) are fixedly connected to the outer surface of the vacuum chamber (2), and the material of each observation window (3) is transparent glass.

3. The metal sputtering device for manufacturing drain-source electrodes of a silicon carbide-based chip according to claim 1, characterized in that: The upper surface of the vacuum chamber (2) is fixedly connected to a gas outlet (5), and the upper surface of the gas outlet (5) is threadedly connected to a valve (6).

4. The metal sputtering device for manufacturing drain-source electrodes of a silicon carbide-based chip according to claim 1, characterized in that: A vacuum gauge (8) is fixedly connected to the upper surface of the vacuum chamber (2), and an air inlet pipe (19) is fixedly connected to the right side of the vacuum chamber (2).

5. The metal sputtering device for manufacturing drain-source electrodes of a silicon carbide-based chip according to claim 1, characterized in that: Four supporting legs (9) are fixedly connected to the bottom surface of the vacuum chamber (2), and a supporting foot (14) is fixedly connected to the bottom surface of each supporting leg (9).

6. A metal sputtering device for manufacturing drain-source electrodes of a silicon carbide-based chip according to claim 1, characterized in that: The bottom surface of the vacuum chamber (2) is fixedly connected to a hood (10), and the bottom surface of the hood (10) is fixedly connected to a cover plate (11).

7. A metal sputtering device for manufacturing drain-source electrodes of a silicon carbide-based chip according to claim 6, characterized in that: The bottom surface of the cover plate (11) is threadedly connected with four fixing bolts (12), and the bottom surface of the hood (10) is provided with a group of heat dissipation grooves (13).

Images