Chemical vapor deposition equipment

Abstract

The utility model provides chemical vapor deposition equipment which comprises a chamber main body, a spraying mechanism and a blocking mechanism, the chamber main body at least comprises a top cover arranged at the top of the chamber main body, and at least one air inlet is formed in the top cover; the spraying mechanism is located in the cavity body and comprises a spraying plate and a plurality of spraying holes formed in the spraying plate at intervals, and the spraying plate is located below the top cover and is spaced from the top cover by a first preset distance; the blocking mechanism is located above the spraying mechanism and comprises at least one blocking cavity with the spraying plate as the bottom wall, an air guide plate and a control part connected with the air guide plate, the air guide plate is the top wall of the blocking cavity, at least one air guide hole is formed in the air guide plate, and the control part controls the air guide plate to move so as to regulate and control the size of the blocking cavity. According to the chemical vapor deposition equipment disclosed by the utility model, the uniformity of a film deposited on the surface of the wafer is improved, and the quality of the film deposited on the surface of the wafer is ensured.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor processing, in particular to a chemical vapor deposition device. Background Art

[0002] Chemical Vapor Deposition (CVD) is a key step in the semiconductor manufacturing process. It is a process in which gaseous or vaporous substances react in the gas phase or at the gas-solid interface to generate solid deposits. The uniformity of the film deposited by the CVD process is very important. If the uniformity of the film is poor, it will seriously affect the yield and performance of the device and increase the production cost.

[0003] At present, the purpose of improving uniformity is mainly achieved by adjusting CVD deposition parameters and hardware balance angles, such as RF power, gas flow rate and heater leveling. The main method is to improve the gas flow rate by setting a spray mechanism in the chemical vapor reaction chamber, such as Figure 1-Figure 3 As shown, they are respectively a side view structural schematic diagram of a chemical vapor deposition device in the prior art (the arrows in the figure indicate the gas flow direction), a top view structural schematic diagram of a chamber body of a chemical vapor deposition device in the prior art, and a top view structural schematic diagram of a spray mechanism of a chemical vapor deposition device in the prior art, comprising a chamber body 01, a top cover 011, an air inlet 012, a spray mechanism 02, a spray plate 021, a spray hole 022, a supporting mechanism 03, a supporting platform 031, a bracket 032, and a wafer 04.

[0004] However, as technology nodes become more and more advanced, current process methods can no longer effectively improve the uniformity of deposition on the wafer surface, especially since the uniformity of thin films in the center and edge of the wafer is quite different.

[0005] In view of this, there is an urgent need for a chemical vapor deposition device that can effectively improve the uniformity of the thickness of the thin film deposited on the surface of the wafer and further improve the quality of the thin film deposited on the surface of the wafer. Utility Model Content

[0006] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a chemical vapor deposition device for solving the problem of uneven thickness of the thin film deposited on the wafer surface in the prior art, which in turn leads to poor quality of the thin film deposited on the wafer surface.

[0007] In order to achieve the above-mentioned purpose and other related purposes, the utility model provides a chemical vapor reaction device, comprising:

[0008] The chamber body at least comprises a top cover arranged on the top of the chamber body, and at least one air inlet is opened on the top cover;

[0009] A spray mechanism, located inside the chamber body, the spray mechanism comprising a spray plate and a plurality of spray holes spaced apart on the spray plate, the spray plate being located below the top cover and spaced apart from the top cover by a first preset distance;

[0010] The blocking mechanism is located above the spray mechanism, and the blocking mechanism includes at least one blocking cavity with the spray plate as the bottom wall, an air guide plate and a control unit connected to the air guide plate. The air guide plate is the top wall of the blocking cavity and is provided with at least one air guide hole. The control unit controls the movement of the air guide plate to adjust the volume of the blocking cavity.

[0011] Optionally, the inner area of ​​the chamber body includes a plurality of buffer zones, and each of the buffer zones is provided with at least one of the barrier chambers.

[0012] Optionally, at least one spray hole is provided on the spray plate at the bottom of each barrier cavity.

[0013] Optionally, the blocking mechanism further includes a baffle, and the air guide plate, the spray plate and the baffle together form the blocking cavity.

[0014] Optionally, the baffle is fixed on the spray mechanism and a second preset distance is spaced between the top end of the baffle and the top cover.

[0015] Optionally, the control unit includes a control button and a connecting rod with one end arranged on the control button, and the other end of the connecting rod is located on the air guide plate.

[0016] Optionally, the control button is located above the top cover, and the connecting rod passes through the top cover and the bottom extends into the barrier cavity.

[0017] Optionally, the aperture of the air guide hole is different from the aperture of the spray hole.

[0018] Optionally, the air inlet is opened at the center of the top cover.

[0019] Optionally, the shape of the air guide hole includes a circle or a regular polygon.

[0020] As described above, the chemical vapor deposition equipment of the present invention has the following beneficial effects: by arranging the blocking mechanism above the spray mechanism, and by forming at least one blocking cavity with the spray plate as the bottom wall and the air guide plate as the top wall above the spray mechanism through the air guide plate, and by arranging a control unit connected to the air guide plate, the control unit controls the movement of the air guide plate and then adjusts the volume of the blocking cavity, thereby realizing fine adjustment of the air flow distribution in the chamber body, improving the uniformity of the thin film deposited on the surface of the wafer, and ensuring the quality of the thin film deposited on the surface of the wafer. In addition, the chemical vapor deposition equipment described above is applied to semiconductor processing equipment, which improves the semiconductor yield and facilitates the subsequent processing technology. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a schematic side view of the structure of a chemical vapor deposition device in the prior art.

[0022] Figure 2 The diagram shows a top view of the structure of a chamber body of a chemical vapor deposition device in the prior art.

[0023] Figure 3 The diagram shows a top view of the structure of a spray mechanism of a chemical vapor deposition device in the prior art.

[0024] Figure 4 Shown is a side structural schematic diagram of the chemical vapor deposition equipment of the present invention.

[0025] Figure 5 Shown is a schematic diagram of the top view of the chemical vapor deposition equipment of the present invention.

[0026] Component number description

[0027] 01 Chamber body

[0028] 011 Top cover

[0029] 012 Air Inlet

[0030] 02 Spray mechanism

[0031] 021 Sprinkler Plate

[0032] 022 Spray hole

[0033] 03 Carrying mechanism

[0034] 031 Loading platform

[0035] 032 Bracket

[0036] 04 Wafer

[0037] 1 Chamber body

[0038] 11 Top cover

[0039] 12 Air Inlet

[0040] 2 Spray mechanism

[0041] 21 Spray plate

[0042] 22 Spray holes

[0043] 3. Barrier mechanism

[0044] 31 Barrier cavity

[0045] 32 Air guide plate

[0046] 33 Control Department

[0047] 331 Control Button

[0048] 332 Connecting rod

[0049] 34 air holes

[0050] 35 Baffle

[0051] 4 Carrying mechanism

[0052] 41 Loading platform

[0053] 42 Bracket

[0054] 5 Wafer

[0055] 6 Buffer DETAILED DESCRIPTION

[0056] The following is a description of the implementation of the present invention by means of specific embodiments. People familiar with the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification.

[0057] See also Figures 1 to 5 It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings in this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the utility model, so they have no substantial technical significance. Any modification of the structure, change in the proportion relationship, or adjustment of the size should still fall within the scope of the technical content disclosed by the utility model without affecting the effects and purposes that can be achieved by the utility model. At the same time, the terms such as "upper", "lower", "left", "right", "middle" and "one" quoted in this specification are only for the convenience of description, and are not used to limit the scope of the implementation of the utility model. The change or adjustment of their relative relationship should also be regarded as the scope of the implementation of the utility model without substantially changing the technical content.

[0058] Embodiment 1

[0059] This embodiment provides a chemical vapor deposition device, such as Figure 4-Figure 5 As shown, they are a side view structural schematic diagram of the chemical vapor deposition device (the arrows in the figure indicate the gas flow direction) and a top view structural schematic diagram of the chemical vapor deposition device, comprising: a chamber body 1, a spray mechanism 2 and a barrier mechanism 3, wherein the chamber body 1 at least comprises a top cover 11 arranged on the top of the chamber body 1, and at least one air inlet 12 is opened on the top cover 11; the spray mechanism 2 is located inside the chamber body 1, and the spray mechanism 2 comprises a spray plate 21 and a plurality of spaced apart on the spray plate 21. The spray hole 22 is arranged thereon, the spray plate 21 is located below the top cover 11 and is spaced a preset distance from the top cover 11; the blocking mechanism 3 is located above the spray mechanism 2, the blocking mechanism 3 includes at least one blocking cavity 31 with the spray plate 21 as the bottom wall, an air guide plate 32 and a control unit 33 connected to the air guide plate 32, the air guide plate 32 is the top wall of the blocking cavity 31 and is provided with at least one air guide hole 34, the control unit 33 controls the movement of the air guide plate 32 to adjust the volume of the blocking cavity 31.

[0060] Specifically, the chemical vapor deposition device is further provided with a carrying mechanism 4 , which includes a carrying platform 41 and a bracket 42 supporting the carrying platform 41 . The carrying platform 41 is located inside the chamber body 1 and below the spray mechanism 2 .

[0061] Specifically, the carrying platform 41 is used to carry the wafer 5 .

[0062] Specifically, the chamber body 1 is a common chemical vapor deposition chamber in the art. The size and model of the chamber body 1 can be selected according to actual conditions and are not limited here.

[0063] As an example, the air inlet 12 is opened at the center of the top cover 11 .

[0064] Specifically, under the condition that the performance of the chemical vapor deposition equipment is met, the number, shape and position of the air inlet 12 can be selected according to actual conditions, and are not limited here. In this embodiment, the number of the air inlet 12 is one.

[0065] Specifically, under the condition that the performance of the chemical vapor deposition equipment is met, the number of the spray holes 22 and the distance between adjacent spray holes 22 can be selected according to actual conditions and are not limited here.

[0066] Specifically, the shape of the spray hole 22 includes a circle or other suitable shapes.

[0067] As an example, at least one spray hole 22 is provided on the spray plate 21 at the bottom of each of the blocking chambers 31 .

[0068] Specifically, the spray holes 22 are used to evenly distribute the reaction gas entering the chamber body 1 , which helps to achieve uniformity of gas flow in the chamber body 1 , so as to ensure uniformity and quality of the deposited film on the surface of the wafer 5 .

[0069] As an example, the internal area of ​​the chamber body 1 includes a plurality of buffer zones 6, each of which is provided with at least one blocking cavity 31. In the present embodiment, the internal area of ​​the chamber body 1 includes three buffer zones 6 that are arranged adjacent to each other in sequence, that is, in the present embodiment, according to the different thicknesses of the thin films deposited in different regions on the surface of the wafer 5 in actual situations, the internal area of ​​the chamber body 1 between the spray mechanism 2 and the top cover 11 above the wafer 5 can be divided to form three buffer zones 6 that are arranged adjacent to each other in sequence.

[0070] Specifically, the shape of the area where the buffer zone 6 is located includes a ring, a polygon or other suitable shapes.

[0071] Specifically, the three buffer zones 6 are respectively arranged to correspond to the edge area of ​​the wafer 5 in the vertical direction, to correspond to the center area of ​​the wafer 5 in the vertical direction, and to correspond to the area between the edge area and the center area of ​​the wafer 5 in the vertical direction, and the reaction gas is deposited onto the surface of the wafer 5 through the correspondingly arranged spray holes 22 respectively.

[0072] Specifically, under the condition that the performance of the chemical vapor deposition equipment is met, the number of the buffer zones 6 can be selected according to the actual situation, and is not limited here. That is, different numbers of the buffer zones 6 can be set according to the different thicknesses of the thin films deposited in different areas on the surface of the wafer 5 in actual situations.

[0073] Specifically, each of the group of compartments 31 is provided with the air guide plate 32 , and the air guide plate 32 is provided with the control unit 33 connected thereto.

[0074] Specifically, the central area of ​​the spray mechanism 2 corresponds to the air inlet 12 in the vertical direction, and at least one spray hole 22 is provided in the central area of ​​the spray plate 21 .

[0075] Specifically, under the condition that the performance of the chemical vapor deposition equipment is met, the number of the barrier chambers 31 can be selected according to the actual situation, and is not limited here. In this embodiment, four barrier chambers 31 are provided in the buffer zone 6 close to the central area of ​​the shower plate 21, and eight barrier chambers 31 are provided in the two buffer zones 6 away from the central area of ​​the shower plate 21. Different numbers of barrier chambers 31 can be provided in the buffer zones 6 according to the different thicknesses of the thin films deposited in different areas on the surface of the wafer 5 in actual situations.

[0076] As an example, the blocking mechanism 3 further includes a baffle 35 , and the air guide plate 32 , the spray plate 21 and the baffle 35 together form the blocking cavity 31 . That is, the baffle 32 is located between two adjacent blocking cavities 31 .

[0077] Specifically, the blocking chamber 31 located in the buffer zone 6 close to the side wall of the chamber body 1 is formed by the air guide plate 32 , the spray plate 21 , the side wall of the chamber body 1 and the baffle plate 35 .

[0078] As an example, the bottom of the baffle plate 35 is fixed on the spray plate 22 and the top of the baffle plate 35 is spaced from the top cover 11 by a second preset distance.

[0079] As an example, the control unit 33 includes a control button 331 and a connecting rod 332 with one end disposed on the control button 331 , and the other end of the connecting rod 332 is located on the air guide plate 32 .

[0080] As an example, the control button 331 is located above the top cover 11 , and the connecting rod 332 passes through the top cover 1 and the bottom extends to the inside of the chamber body 1 .

[0081] Specifically, under the condition that the performance of the chemical vapor phase equipment is met, the size and shape of the control unit 33 can be selected according to actual conditions, and are not limited here.

[0082] Specifically, the control button 331 is rotated to control the connecting rod 332 to drive the air guide plate 32 to rise and fall in the blocking cavity 31 , that is, the control unit 33 can adjust the height of the air guide plate 32 in the group cavity 31 to be inconsistent.

[0083] As an example, the shape of the air guide hole 34 includes a circle, a regular polygon or other suitable shapes.

[0084] As an example, the diameter of the air guide hole 34 is different from the diameter of the spray hole 22. In this embodiment, the diameter of the air guide hole 34 is smaller than the diameter of the spray hole 22.

[0085] Specifically, the reaction gas first enters the area between the top cover 11 and the air guide plate 32 through the air inlet 12, that is, enters different buffer zones 6, and then the reaction gas enters the corresponding barrier chambers 31 through the air guide holes 34 respectively. The heights of the air guide plates 32 serving as the top walls of different barrier chambers 31 are controlled by the control unit 33 to be different, so that the concentrations of the reaction gases in different barrier chambers 31 are different, and the reaction gases in different barrier chambers 31 are transported to the wafer 5 through the spray holes 22 and deposited on the surface of the wafer 5.

[0086] Specifically, by disposing a plurality of the buffer zones 6 in the chamber body 1 and disposing a plurality of the blocking chambers 31 in the buffer zones 6 , the airflow distribution in the chamber body 1 is further refined.

[0087] Specifically, according to the different thicknesses of the thin films deposited in different areas on the surface of the wafer 5 in actual situations, the blocking mechanism 3 is arranged above the spray mechanism 2, and at least one blocking cavity 31 with the spray plate 21 as the bottom wall and the air guide plate 32 as the top wall is formed above the spray mechanism 2 through the air guide plate 32. The height of the air guide plate 32 is adjusted by the control unit 33 to thereby adjust the volume of the blocking cavity 31, thereby achieving fine adjustment of the airflow distribution in the chamber main body 1.

[0088] The chemical vapor deposition equipment of this embodiment sets the blocking mechanism 3 above the spray mechanism 2, and forms at least one blocking cavity 31 with the spray plate 21 as the bottom wall and the air guide plate 32 as the top wall above the spray mechanism 2 through the air guide plate 32. The height of the air guide plate 32 is regulated by the control unit 33 to thereby regulate the volume of the blocking cavity 31, thereby achieving fine adjustment of the air flow distribution in the chamber body 1, improving the uniformity of the thin film deposited on the surface of the wafer 5, and ensuring the quality of the thin film deposited on the surface of the wafer 5.

[0089] Embodiment 2

[0090] This embodiment provides a semiconductor processing device, which includes the chemical vapor deposition equipment as described in the first embodiment.

[0091] Specifically, the semiconductor processing device is used to process the wafer 5 .

[0092] Specifically, the chemical vapor deposition equipment is used to place the wafer 5 on the supporting platform 41 of the supporting mechanism 4, so that the reaction gas enters different areas of the buffer zone 6 between the top cover 1 and the spray mechanism 2 in the chamber body 1 through the air inlet 12 located on the top cover 11 of the chamber body 1, and then enters different barrier chambers 31 through the air guide holes 34, wherein the height of the air guide plate 32 is regulated by the control unit 33, and then the flow rate and concentration of the reaction gas to be deposited on different areas of the surface of the wafer 5 are regulated, and the reaction gas is then deposited on the surface of the wafer 5 through the spray hole 22, and the wafer 5 after deposition is subjected to subsequent processing.

[0093] The semiconductor processing device of this embodiment includes the chemical vapor deposition equipment as described in the first embodiment. The chemical vapor deposition equipment is used to deposit a thin film on the surface of the wafer 5, thereby ensuring the quality of the deposited thin film, improving the semiconductor yield, and facilitating subsequent processing technology.

[0094] In summary, the chemical vapor deposition equipment of the utility model is provided with a barrier mechanism above the spray mechanism, and at least one barrier cavity with the spray plate as the bottom wall and the air guide plate as the top wall is formed above the spray mechanism through the air guide plate, and a control unit connected to the air guide plate is provided, and the control unit controls the movement of the air guide plate to adjust the volume of the barrier cavity, thereby realizing fine adjustment of the air flow distribution in the chamber body, improving the uniformity of the thin film deposited on the surface of the wafer, and ensuring the quality of the thin film deposited on the surface of the wafer. In addition, the above-mentioned chemical vapor deposition equipment is applied to semiconductor processing equipment, which improves the semiconductor yield and facilitates the subsequent processing technology. Therefore, the utility model effectively overcomes various shortcomings in the prior art and has a high industrial utilization value.

[0095] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the technology may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed in the present invention shall still be covered by the claims of the present invention.

Claims

1. A chemical vapor deposition device, characterized in that: include: The chamber body at least comprises a top cover arranged on the top of the chamber body, and at least one air inlet is opened on the top cover; A spray mechanism, located inside the chamber body, the spray mechanism comprising a spray plate and a plurality of spray holes spaced apart on the spray plate, the spray plate being located below the top cover and spaced apart from the top cover by a first preset distance; The blocking mechanism is located above the spray mechanism, and the blocking mechanism includes at least one blocking cavity with the spray plate as the bottom wall, an air guide plate and a control unit connected to the air guide plate. The air guide plate is the top wall of the blocking cavity and is provided with at least one air guide hole. The control unit controls the movement of the air guide plate to adjust the volume of the blocking cavity.

2. The chemical vapor deposition apparatus according to claim 1, characterized in that: The inner area of ​​the chamber body includes a plurality of buffer zones, and each of the buffer zones is provided with at least one blocking cavity.

3. The chemical vapor deposition apparatus according to claim 1, characterized in that: At least one spray hole is provided on the spray plate at the bottom of each barrier cavity.

4. The chemical vapor deposition apparatus according to claim 1, characterized in that: The blocking mechanism further includes a baffle plate, and the air guide plate, the spray plate and the baffle plate together form the blocking cavity.

5. The chemical vapor deposition apparatus according to claim 4, characterized in that: The bottom of the baffle is fixed on the spray mechanism and the top of the baffle is spaced a second preset distance from the top cover.

6. The chemical vapor deposition apparatus according to claim 1, characterized in that: The control part includes a control button and a connecting rod with one end arranged on the control button, and the other end of the connecting rod is located on the air guide plate.

7. The chemical vapor deposition apparatus according to claim 6, characterized in that: The control button is located above the top cover, and the connecting rod passes through the top cover and the bottom thereof extends to the interior of the chamber body.

8. The chemical vapor deposition apparatus according to claim 1, characterized in that: The aperture of the air guide hole is different from the aperture of the spray hole.

9. The chemical vapor deposition apparatus according to claim 1, characterized in that: The air inlet is opened at the center of the top cover.

10. The chemical vapor deposition apparatus according to claim 1, characterized in that: The shapes of the air guide holes include circle and regular polygon.

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