Supporting device and sapphire crystal growth equipment

Abstract

The utility model provides a supporting device and sapphire crystal growth equipment. The supporting device comprises a supporting structure and a first isolation structure, and the supporting structure is made of a graphite material and is provided with a first supporting surface; the first isolation structure is made of inert materials and arranged on the first supporting face, and the surface, away from the first supporting face, of the first isolation structure is a second supporting face. The supporting structure supports the first isolation structure and the crucible on the first isolation structure, and the supporting structure is made of graphite materials, so that the supporting structure is low in melting point and small in density, and the probability of deformation of the supporting structure in a high-temperature environment can be reduced due to the characteristic of the low melting point; furthermore, the crucible and the crystal in the crucible can be well supported, and the probability that the manufacturing process is abnormal is reduced; due to the characteristic of small density, the weight of the supporting structure can be reduced under the condition that the supporting structure has the same size as a supporting structure in the prior art, and more labor and time are saved during installation and maintenance of the supporting structure.

Description

Technical Field

[0001] The present application relates to the technical field of sapphire production, and in particular to a supporting device and sapphire crystal growth equipment. Background Art

[0002] The main methods for making sapphire crystals include flame melting, Czochralski method, crucible descent method, pyrolysis method, heat exchange method and guided mold method, and the pyrolysis method is the most suitable for growing large-size, high-quality chip substrates (such as LED chip substrates, Light Emitting Diode).

[0003] The pyrolysis method is to place the raw materials into a high-temperature resistant crucible and heat them to the melting point to form a melt. The seed crystal is then contacted with the surface of the melt. The same structure as the seed crystal begins to grow at the solid-liquid interface between the seed crystal and the melt. This structure is finally cooled and solidified to form a crystal.

[0004] In order to support the crucible at a certain height, a support structure is provided under the crucible. At present, the support structure is mainly made of materials such as tungsten and molybdenum. However, tungsten and molybdenum materials that are exposed to high temperature for a long time are prone to metal creep and deformation, which results in the support structure being unable to properly support the crucible and the crystal in the crucible, and even causing abnormalities in the crystal production process; and the density of tungsten and molybdenum materials is relatively large, which makes the support structure made of tungsten and molybdenum materials heavy, making the installation and maintenance of the support structure laborious and time-consuming. Utility Model Content

[0005] The present application provides a support device and a sapphire crystal growth device to reduce the probability of deformation of the support structure when it is in a high temperature environment for a long time, and to reduce the weight of the support structure to save effort and time during installation and maintenance.

[0006] In a first aspect, an embodiment of the present application provides a supporting device, comprising: a supporting structure and a first isolation structure, the supporting structure being made of graphite material and having a first supporting surface; the first isolation structure being made of an inert material and being arranged on the first supporting surface, and the surface of the first isolation structure facing away from the first supporting surface being a second supporting surface.

[0007] In some embodiments, the support structure is a structure made of isostatically pressed graphite material.

[0008] In some embodiments, the support structure includes: a first plate body, a first support column and a second plate body, the two ends of the first support column are respectively vertically connected to the first plate body and the second plate body, so that the support structure is an I-shaped structure, the first plate body has a plurality of bosses on the side away from the first support column, there is a gap between two adjacent bosses, and the plurality of end surfaces of the plurality of bosses cooperate to form a first support surface.

[0009] In some embodiments, the first isolation structure includes: a plurality of first isolation sheets, the plurality of first isolation sheets are respectively affixed to a plurality of bosses, and a plurality of end surfaces of the plurality of first isolation sheets facing away from the plurality of bosses cooperate to form a second supporting surface; wherein the sum of the thicknesses of a group of bosses affixed to each other and the first isolation sheets is the same as the sum of the thicknesses of another group of bosses affixed to each other and the first isolation sheets.

[0010] In some embodiments, the multiple bosses have the same size and are evenly distributed on the first plate; the multiple first isolation sheets have the same size, and after being respectively attached to the multiple bosses, the circumference of any boss is flush with the circumference of the first isolation sheet thereon.

[0011] In some embodiments, the support structure includes: a third plate, a second support column and a fourth plate, the two ends of the second support column are respectively vertically connected to the third plate and the fourth plate, so that the support structure is an I-shaped structure, and the plane of the third plate facing away from the second support column is the first support surface; the first isolation structure includes: a second isolation sheet, the second isolation sheet is adhered to the first support surface, and the second isolation sheet covers the entire first support surface, multiple second isolation sheets are spaced apart and adhered to cover part of the first support surface, or the second isolation sheet has multiple through holes and covers at least a circle of the edge of the first support surface.

[0012] In some embodiments, the first isolation structure is a structure made of tantalum material.

[0013] In some embodiments, the supporting device may further include: a second isolation structure, which is arranged on a side of the supporting structure away from the first isolation structure, and the side of the second isolation structure away from the supporting structure can be supported on a supporting plane; wherein the thermal conductivity of the second isolation structure is less than the thermal conductivity of the supporting structure.

[0014] In some embodiments, the second isolation structure is a structure made of zirconium oxide or aluminum oxide.

[0015] In a second aspect, an embodiment of the present application provides a sapphire crystal growth device, which includes: a support device, a crucible and a heating device according to any embodiment of the first aspect, the crucible being detachably arranged on a second support surface of the support device; and the heating device being at least arranged around the circumference of the crucible.

[0016] Through the above technical scheme, the support device and sapphire crystal growth equipment provided by the present application include a support structure and a first isolation structure. The support structure supports the first isolation structure and the crucible on the first isolation structure, and the support structure is made of graphite material, so that the melting point of the support structure is low and the density is low. The low melting point characteristic can reduce the probability of deformation of the support structure in a high temperature environment, and thus can well support the crucible and the crystal in the crucible, and reduce the probability of abnormalities in the manufacturing process; the low density characteristic can reduce the weight of the support structure when the size is the same as that of the support structure in the prior art, and it is more labor-saving and time-saving during the installation and maintenance of the support structure; and the first isolation structure is made of inert material so as not to chemically react with the crucible, and at the same time can isolate the crucible and the support structure, so as to reduce the impact of changes in the support structure material on the stability of the crucible and ensure the yield of the grown crystals.

[0017] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application and implement it according to the contents of the specification, the following is a detailed description of the preferred embodiments of the present application in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0019] Figure 1 Schematic diagram of the structure of the support device provided in the embodiment of the present application Figure 1 ;

[0020] Figure 2 A schematic structural diagram of a first plate body of a support device provided in an embodiment of the present application;

[0021] Figure 3 Schematic diagram of the structure of the support device provided in the embodiment of the present application Figure 2 ;

[0022] Figure 4 Provided in the embodiments of this application Figure 3 A schematic cross-sectional view of the support device AA surface;

[0023] Figure 5 A schematic diagram of the partial structure of a sapphire crystal growth device provided in an embodiment of the present application;

[0024] Figure 6 Provided in the embodiments of this application Figure 5Schematic diagram of the cross-section of the BB surface of the sapphire crystal growth equipment.

[0025] Description of reference numerals:

[0026] 1. Support structure; 101. First support surface; 102. First plate; 103. First support column; 104. Second plate; 105. Boss; 2. First isolation structure; 201. Second support surface; 202. First isolation sheet; 3. Second isolation structure; 4. Crucible. DETAILED DESCRIPTION

[0027] The following is a further detailed description of the implementation methods of the present application in conjunction with the accompanying drawings and examples. The detailed descriptions of the following examples and the accompanying drawings are used to exemplarily illustrate the principles of the present application, but cannot be used to limit the scope of the present application. The present application can be implemented in many different forms and is not limited to the specific embodiments disclosed herein, but includes all technical solutions that fall within the scope of the claims.

[0028] The present application provides these embodiments to make the present application thorough and complete, and to fully express the scope of the present application to those skilled in the art. It should be noted that unless otherwise specifically stated, the relative arrangement of the parts and steps, the composition of the materials, the numerical expressions and the numerical values ​​set forth in these embodiments should be interpreted as being merely exemplary, and not as limiting.

[0029] It should be noted that, in the description of this application, unless otherwise specified, the meaning of "multiple" is greater than or equal to two; the terms "upper", "lower", "left", "right", "inner", "outer", etc., indicating the orientation or positional relationship, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this application. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0030] In addition, the words "first", "second" and similar words used in this application do not indicate any order, quantity or importance, but are only used to distinguish different parts. "Vertical" does not mean vertical in the strict sense, but is within the tolerance range. "Parallel" does not mean parallel in the strict sense, but is within the tolerance range. "Include" or "comprising" and similar words mean that the elements before the word include the elements listed after the word, and do not exclude the possibility of including other elements.

[0031] It should also be noted that in the description of this application, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances. When a specific device is described as being located between a first device and a second device, there may or may not be an intermediate device between the specific device and the first device or the second device.

[0032] All terms used in this application have the same meaning as those understood by those of ordinary skill in the art to which this application belongs, unless otherwise specifically defined. It should also be understood that terms defined in general dictionaries, such as general dictionaries, should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an idealized or extremely formal sense, unless explicitly defined herein.

[0033] Technologies, methods, and equipment known to ordinary technicians in the relevant art may not be discussed in detail, but where appropriate, the technologies, methods, and equipment should be considered part of the specification.

[0034] Sapphire, commonly known as corundum gemstone, is mainly composed of Al2O3 (aluminum oxide). It has good optical, thermal, dielectric and excellent mechanical properties, making it a multifunctional crystal material with excellent comprehensive performance. Sapphire crystal has unique mechanical processing characteristics. After adopting the precision grinding and polishing technology of modern wafer processing, it can obtain a surface with ultra-precision nanometer size accuracy. According to the different grinding and polishing surfaces, it can form single-sided polished sapphire wafers and double-sided polished sapphire wafers; single-sided polished sapphire wafers completed by single-sided polishing process are mainly used as substrate materials for gallium nitride epitaxial growth; transparent sapphire wafers completed by double-sided polishing process are mainly used as optical lenses, watch mirrors, windows in the aerospace field and smart products (such as: display screens, cameras, camera covers, Home buttons) and other applications.

[0035] The main methods for making sapphire crystals include flame melting, Czochralski method, crucible descent method, pyrolysis method, heat exchange method and guided mold method, and the pyrolysis method is the most suitable for growing large-size, high-quality chip substrates (such as LED chip substrates, Light Emitting Diode).

[0036] The pyrolysis method is to place the raw materials into a high-temperature resistant crucible and heat them to the melting point to form a melt. The seed crystal is then contacted with the surface of the melt. The same structure as the seed crystal begins to grow at the solid-liquid interface between the seed crystal and the melt. This structure is finally cooled and solidified to form a crystal.

[0037] In order to support the crucible at a certain height, a support structure is provided under the crucible. At present, the support structure is mainly made of materials such as tungsten and molybdenum. However, tungsten and molybdenum materials that are exposed to high temperature for a long time are prone to metal creep and deformation, which results in the support structure being unable to properly support the crucible and the crystal in the crucible, and even causing abnormalities in the crystal production process; and the density of tungsten and molybdenum materials is relatively large, which makes the support structure made of tungsten and molybdenum materials heavy, making the installation and maintenance of the support structure laborious and time-consuming.

[0038] In the support device provided in the present application, the support structure 1 is made of graphite material. The melting point of the graphite material is higher than the melting point of the tungsten and molybdenum materials used in the support structure in the prior art, so as to reduce the probability of deformation of the support structure 1 when it is in a high temperature environment for a long time. The density of the graphite material is lower than the density of the tungsten and molybdenum materials used in the support structure in the prior art, so as to reduce the weight of the support structure 1 and save more effort and time during the installation and maintenance of the support structure 1, at least when the setting is the same size as the support structure in the prior art. Since the crucible 4 contains silicon dioxide components, when the support structure 1 is made of graphite material, the silicon dioxide components on the crucible 4 are easily reduced by the graphite material of the support structure 1 to generate silicon, which affects the structural stability of the crucible 4. For this reason, the support structure 1 of the present application is provided with a first isolation structure 2 made of inert material, so that the crucible 4 and the support structure 1 are isolated by the first isolation structure 2, and the first isolation structure 2 made of inert material is chemically stable so as not to react chemically with the crucible 4, and the first isolation structure 2 can isolate the crucible 4 from the support structure 1 to reduce the probability of chemical reaction between the crucible 4 and the support structure 1, thereby ensuring the stability of the crucible 4.

[0039] First aspect

[0040] The present application embodiment provides a support device, see Figures 1 to 6 As shown, the supporting device includes: a supporting structure 1 and a first isolation structure 2, the supporting structure 1 is made of graphite material and has a first supporting surface 101; the first isolation structure 2 is made of inert material, is arranged on the first supporting surface 101, and the surface of the first isolation structure 2 away from the first supporting surface 101 is the second supporting surface 201.

[0041] The support structure 1 can be made of ordinary graphite material or isostatic graphite material. For example, the support structure 1 is made of isostatic graphite material with an ash content of less than 50ppm. The lower the ash content, the higher the purity of the isostatic graphite material, so as to prevent the impurities of the support structure 1 from entering the crucible 4 and then being mixed in the generated crystals, thereby affecting the purity of the generated crystals. The support structure 1 can be a cylindrical structure, an I-shaped structure, or a structure of other shapes; the first support surface 101 of the support structure 1 can be a continuous (i.e., hole-free) complete support surface, or a non-continuous support surface formed by the cooperation of multiple end surfaces of multiple bosses 105 described below.

[0042] The first isolation structure 2 can be made of tantalum material or an inert composite material composed of tantalum material and other inert materials. The first isolation structure 2 and the support structure 1 can be connected to the support structure 1 by an inseparable fixation or a detachable fixation. When the detachable fixed connection is used, the first isolation structure 2 can be conveniently removed for replacement and other operations. The first isolation structure 2 can be an integral structure covering the entire first support surface 101, or it can be a plurality of split structures such as the plurality of first isolation plates 202 described below; the second support surface 201 of the first isolation structure 2 is a surface for supporting the crucible 4, that is, when the crystal is produced by the fossa method, the support structure 1 is located below the first isolation structure 2 to support the first isolation structure 2, and the second support surface 201 of the first isolation structure 2 supports the crucible 4.

[0043] In one example, see Figures 1 to 6 As shown, the support device includes: a support structure 1 and a first isolation structure 2. The support structure 1 is made of isostatic graphite material with an ash content of less than 50ppm, and the upper surface of the support structure 1 is a first support surface 101; the first isolation structure 2 is made of tantalum material, and the first isolation structure 2 is arranged on the first support surface 101, and the upper surface of the first isolation structure 2 away from the first support surface 101 is a second support surface 201. When the crystal is produced by the pyrolysis method, the crucible 4 is placed on the second support surface 201. When the heating device on the side of the crucible 4 provides heat, the temperature of the crucible 4 rises so that the raw materials in the crucible 4 melt to form a molten soup. In this case, the seed crystal contacting the surface of the molten soup begins to grow a structure identical to the seed crystal on the solid-liquid interface with the molten soup, and the structure is finally cooled and solidified to form a crystal, thus completing the growth of the crystal.

[0044] In this embodiment, the supporting device includes a supporting structure 1 and a first isolation structure 2. The supporting structure 1 supports the first isolation structure 2 and the crucible 4 on the first isolation structure 2. The supporting structure 1 is made of graphite material, so that the supporting structure 1 has a low melting point and a low density. The low melting point characteristic can reduce the probability of deformation of the supporting structure 1 in a high temperature environment, thereby being able to well support the crucible 4 and the crystals in the crucible 4 and reduce the probability of abnormalities in the manufacturing process; the low density characteristic can reduce the weight of the supporting structure 1 while having the same size as the supporting structure in the prior art, and saves more effort and time during the installation and maintenance of the supporting structure 1; and the first isolation structure 2 is made of inert material so as not to chemically react with the crucible 4, and at the same time can isolate the crucible 4 and the supporting structure 1, so as to reduce the impact of changes in the material of the supporting structure 1 on the stability of the crucible 4 and ensure the yield of the grown crystals.

[0045] In addition, the graphite material has thermal conductivity, so that the support structure 1 can absorb the surrounding heat (such as the heat generated by the heating device in the second aspect) and provide the heat to the crucible 4 to further slow down the melting of the raw materials in the crucible 4; and because the cost of graphite material is lower than that of tungsten and molybdenum materials, the cost of the support structure 1 in this embodiment is low when the size is the same as that of the support structure in the prior art.

[0046] In some embodiments, the support structure 1 is made of isostatic graphite material. The isostatic graphite material has good heat resistance, and its mechanical strength increases with the increase of temperature, reaching the highest value at about 2500°C. In this way, the support structure 1 can well support the crucible 4 in a high temperature environment.

[0047] In some embodiments, see Figures 1 to 6 As shown, the support structure 1 includes: a first plate body 102, a first support column 103 and a second plate body 104, the two ends of the first support column 103 are respectively vertically connected to the first plate body 102 and the second plate body 104, so that the support structure 1 is an I-shaped structure, and the first plate body 102 has a plurality of bosses 105 on the side away from the first support column 103, and there is a gap between two adjacent bosses 105, and the plurality of end surfaces of the plurality of bosses 105 cooperate to form a first support surface 101.

[0048] The shapes of the first plate 102 and the second plate 104 are consistent or inconsistent, and the radial dimension of the first plate 102 in the direction perpendicular to the first support column 103 can be consistent or inconsistent with the radial dimension of the second plate 104 in the direction perpendicular to the first support column 103. For example, the first plate 102 and the second plate 104 are both circular plate-shaped, and the diameter range is 50-400 mm, the thickness range is 20-50 mm, the diameter range of the first support column 103 is 30-150 mm, and the radial dimension of the first plate 102 in the direction perpendicular to the first support column 103 is consistent with the radial dimension of the second plate 104 in the direction perpendicular to the first support column 103. The support structure 1 is an I-shaped structure so as to support the crucible 4. At the same time, the radial dimension of the first support column 103 is smaller than the radial dimension of the first plate 102 and the second plate 104, so as to reduce the material and manufacturing cost of the support structure 1 as much as possible.

[0049] The arrangement of the plurality of bosses 105 may be consistent or inconsistent. When the plurality of bosses 105 are consistent, the equipment for manufacturing the plurality of bosses 105 can be simplified; the gap between two adjacent bosses 105 can reduce the number of bosses 105, so as to reduce the manufacturing cost of the supporting device, and the gap between any two adjacent bosses 105 can be consistent or inconsistent with the gap between the other two adjacent bosses 105; the plurality of end surfaces of the plurality of bosses 105 cooperate to form the first supporting surface 101, that is, the plurality of bosses 105 directly contact the first isolation structure 2 and support the first isolation structure 2, so as to further reduce the graphite material close to the crucible 4 and ensure the stability of the structure of the crucible 4. In implementation, the thickness of the boss 105 can be 5-10 mm, and a flattening treatment is performed on the side corresponding to the first supporting surface 101.

[0050] In some embodiments, see Figure 1 and Figure 2 As shown, the first isolation structure 2 includes: a plurality of first isolation sheets 202, wherein the plurality of first isolation sheets 202 are respectively and correspondingly bonded to a plurality of bosses 105, and a plurality of end surfaces of the plurality of first isolation sheets 202 facing away from the plurality of bosses 105 cooperate to form a second supporting surface 201; wherein the sum of the thicknesses of a group of bosses 105 and first isolation sheets 202 bonded to each other is the same as the sum of the thicknesses of another group of bosses 105 and first isolation sheets 202 bonded to each other.

[0051] The multiple first isolation sheets 202 and the multiple bosses 105 are arranged in a one-to-one correspondence, so as to reduce the material and manufacturing cost of the first isolation structure 2 as much as possible. At the same time, the multiple bosses 105 can position the assembly of the multiple first isolation sheets 202, and the multiple bosses 105 raise the multiple first isolation sheets 202, so as to relatively reduce the thickness of the first isolation sheets 202. The sum of the thickness of a group of bosses 105 and first isolation sheets 202 that are attached to each other is the same as the sum of the thickness of another group of bosses 105 and first isolation sheets 202 that are attached to each other, that is, the total thickness of the bosses 105 and first isolation sheets 202 that are attached to each other is a constant, so that the second support surface 201 formed by the multiple first isolation sheets 202 is a plane, so as to support the crucible 4 more stably; and the thickness of the two bosses 105 in any two groups can be different, so as to reduce the restrictions on the thickness of the bosses 105 and the thickness of the first isolation sheets 202.

[0052] In some embodiments, see Figure 1 As shown, the multiple bosses 105 have the same size and are evenly distributed on the first plate 102; the multiple first spacers 202 have the same size, and after being attached to the multiple bosses 105, the circumference of any boss 105 is flush with the circumference of the first spacer 202 thereon. The evenly distributed arrangement enables the support device to support the crucible 4 more stably, and the circumference of any boss 105 being flush with the circumference of the first spacer 202 thereon can enhance the visual effect after the multiple bosses 105 are connected to the multiple first spacers 202.

[0053] In other embodiments, the support structure 1 includes: a third plate body, a second support column and a fourth plate body, the two ends of the second support column are respectively vertically connected to the third plate body and the fourth plate body, so that the support structure 1 is an I-shaped structure, and the plane of the third plate body away from the second support column is the first support surface 101; the first isolation structure 2 includes: a second isolation sheet, the second isolation sheet is adhered to the first support surface 101, and the second isolation sheet covers the entire first support surface 101, multiple second isolation sheets are spaced apart and adhered to cover part of the first support surface 101, or the second isolation sheet has multiple through holes and covers at least a circle of the edge of the first support surface 101.

[0054] The first support surface 101 of the support structure 1 including the first plate 102, the first support column 103 and the second plate 104 in the aforementioned embodiment is an incomplete plane formed by the cooperation of multiple end surfaces raised by multiple bosses 105, while the first support surface 101 of the support structure 1 including the third plate, the second support column and the fourth plate in this embodiment is a complete plane; on this basis, the second isolation sheet of the first isolation structure 2 can be a complete cover of the entire first support surface 101, or a plurality of second isolation sheets can be spaced apart and attached to cover part of the first support surface 101, or a through hole can be provided to cover a portion within a circle of edges while covering a circle of edges of the first support surface 101. During implementation, flexible selection can be made between the aforementioned embodiment and this embodiment.

[0055] In some embodiments, the first isolation structure 2 is a structure made of tantalum material. Its purity can be 99.9% to achieve a better isolation effect; when the first isolation structure 2 includes a first isolation sheet 202 disposed on the boss 105, the thickness of the first isolation sheet 202 can be 2-5 mm; when the first isolation structure 2 includes a first support surface 101 directly disposed on an entire plane, the thickness of the first isolation structure 2 can be 7-15 mm. The cost of tantalum material is higher than that of graphite material. Thus, when designing the boss 105, the first isolation structure 2 uses less material and has a low cost.

[0056] In some embodiments, see Figure 1 , Figures 3 to 6 As shown, the supporting device may further include: a second isolation structure 3, which is arranged on the side of the supporting structure 1 away from the first isolation structure 2, and the side of the second isolation structure 3 away from the supporting structure 1 can be supported on a supporting plane; wherein the thermal conductivity of the second isolation structure 3 is less than the thermal conductivity of the supporting structure 1.

[0057] The second isolation structure 3 can be in the shape of a flat plate, a truncated cone, or other shapes; the side of the second isolation structure 3 facing away from the support structure 1 can be flat so that it can be supported on a support plane (such as the ground), or it can be concave-convex with the thickness of the concave-convex structure being consistent so that it can be supported on a support plane, or it can be other settings. The thermal conductivity of the second isolation structure 3 is lower than the thermal conductivity of the support structure 1, so that the temperature of the second isolation structure 3 is lower than the temperature of the support structure 1, so as to reduce the probability of heat transfer to the support plane.

[0058] In some embodiments, the second isolation structure 3 is made of zirconium oxide or aluminum oxide. In implementation, the purity of the second isolation structure 3 can be 99.9% to further reduce the probability of heat transfer to the support plane, and the second isolation structure 3 can be made of zirconium oxide or aluminum oxide.

[0059] In one example, see Figures 1 to 6 As shown, the supporting device comprises:

[0060] Support structure 1, support structure 1 is a structure made of isostatic graphite material with ash content less than 20ppm. Support structure 1 includes: a circular first plate body 102 with a diameter of 350mm and a thickness of 40mm, a first support column 103 with a diameter of 100mm and a height of 280mm, and a circular second plate body 104 with a diameter of 300mm and a thickness of 30mm. The two ends of the first support column 103 are respectively vertically connected to the first plate body 102 and the second plate body 104, so that the support structure 1 is an I-shaped structure. The side of the first plate body 102 away from the first support column 103 has 12 evenly distributed and structurally consistent bosses 105 with a diameter of 50mm and a thickness of 5mm. There is a gap between two adjacent bosses 105, and the multiple end surfaces of the multiple bosses 105 cooperate to form a first support surface 101.

[0061] The first isolation structure 2 is a structure made of tantalum material with a purity of 99.9%. The first isolation structure 2 includes: a plurality of first isolation sheets 202 with a thickness of 2 mm, the plurality of first isolation sheets 202 are respectively attached to one side of the first support surface 101 corresponding to the plurality of bosses 105, the sum of the thickness of a group of bosses 105 and first isolation sheets 202 attached to each other is the same as the sum of the thickness of another group of bosses 105 and first isolation sheets 202 attached to each other, the peripheral side of any boss 105 is flush with the peripheral side of the first isolation sheet 202 thereon, and the plurality of end surfaces of the plurality of first isolation sheets 202 facing away from the plurality of bosses 105 cooperate to form the second support surface 201 for supporting the crucible 4.

[0062] The second isolation structure 3 is a structure made of zirconium oxide or aluminum oxide material with a purity of 99.9%. The second isolation structure 3 is arranged on the side of the support structure 1 away from the first isolation structure 2, and the side of the second isolation structure 3 away from the support structure 1 can be supported on a support plane, and the thermal conductivity of the second isolation structure 3 is less than the thermal conductivity of the support structure 1.

[0063] Second aspect

[0064] The present application embodiment provides a sapphire crystal growth device, see Figures 5 and 6 As shown, the sapphire crystal growth device comprises: a support device according to any embodiment of the first aspect, a crucible 4 and a heating device, wherein the crucible 4 is detachably arranged on the second support surface 201 of the support device; and the heating device is at least arranged around the circumference of the crucible 4. The heating device generates heat to melt the raw materials in the crucible 4, and the heating device can be a metal rod that generates heat after being energized, or a fluid pipe with heat inside, or other devices.

[0065] The sapphire crystal growth equipment is provided with a supporting device in the first aspect, and the supporting device includes a supporting structure 1 and a first isolation structure 2. The supporting structure 1 supports the first isolation structure 2 and the crucible 4 on the first isolation structure 2, and the supporting structure 1 is made of graphite material, so that the supporting structure 1 has a low melting point and a low density. The low melting point characteristic can reduce the probability of deformation of the supporting structure 1 in a high temperature environment, and thus can well support the crucible 4 and the crystal in the crucible 4, and reduce the probability of abnormalities in the manufacturing process; the low density characteristic can reduce the weight of the supporting structure 1 under the same size as the supporting structure in the prior art, and save more effort and time during the installation and maintenance of the supporting structure 1; and the first isolation structure 2 is made of inert material so as not to chemically react with the crucible 4, and at the same time can isolate the crucible 4 and the supporting structure 1, so as to reduce the impact of changes in the material of the supporting structure 1 on the stability of the crucible 4 and ensure the yield rate of the grown crystals.

[0066] In addition, the graphite material has thermal conductivity, so that the support structure 1 can absorb the surrounding heat (such as the heat generated by the heating device in the second aspect) and provide the heat to the crucible 4 to further slow down the melting of the raw materials in the crucible 4; and because the cost of graphite material is lower than that of tungsten and molybdenum materials, the cost of the support structure 1 in this embodiment is low when the size is the same as that of the support structure in the prior art.

[0067] It should be noted that the support device in the sapphire crystal growth device provided in the embodiment of the present application is similar to the description of the support device embodiment described above, and has similar beneficial effects as the support device embodiment described above. For technical details not disclosed in the embodiment of the sapphire crystal growth device of the present application, please refer to the description of the support device embodiment in the present application for understanding, and no further description will be given here.

[0068] So far, various embodiments of the present application have been described in detail. In order to avoid obscuring the concept of the present application, some details known in the art are not described. Based on the above description, those skilled in the art can fully understand how to implement the technical solution disclosed herein.

[0069] Although some specific embodiments of the present application have been described in detail by way of examples, it should be understood by those skilled in the art that the above examples are for illustration only and are not intended to limit the scope of the present application. It should be understood by those skilled in the art that the above embodiments may be modified or some technical features may be replaced by equivalents without departing from the scope and spirit of the present application. In particular, the various technical features mentioned in the various embodiments may be combined in any manner as long as there is no structural conflict.

Claims

1. A supporting device, characterized in that: include: The support structure (1) is made of graphite material and has a first support surface (101); The first isolation structure (2) is made of an inert material and is arranged on the first supporting surface (101), and the surface of the first isolation structure (2) facing away from the first supporting surface (101) is the second supporting surface (201).

2. The support device according to claim 1, characterized in that: The support structure (1) is a structure made of isostatically pressed graphite material.

3. The supporting device according to claim 1 or 2, characterized in that: The support structure (1) comprises: a first plate body (102), a first support column (103) and a second plate body (104); the two ends of the first support column (103) are respectively vertically connected to the first plate body (102) and the second plate body (104), so that the support structure (1) presents an I-shaped structure; the first plate body (102) has a plurality of bosses (105) on a side away from the first support column (103); there is a gap between two adjacent bosses (105); and the plurality of end surfaces of the plurality of bosses (105) cooperate to form the first support surface (101).

4. The supporting device according to claim 3, characterized in that: The first isolation structure (2) comprises: a plurality of first isolation sheets (202), the plurality of first isolation sheets (202) being respectively and correspondingly attached to the plurality of bosses (105), and a plurality of end surfaces of the plurality of first isolation sheets (202) facing away from the plurality of bosses (105) cooperate to form the second supporting surface (201); The sum of the thicknesses of one group of bosses (105) and the first isolation sheet (202) that are bonded to each other is the same as the sum of the thicknesses of another group of bosses (105) and the first isolation sheet (202) that are bonded to each other.

5. The supporting device according to claim 4, characterized in that: The multiple bosses (105) have the same size and are evenly distributed on the first plate (102); The multiple first isolation sheets (202) have the same size, and after being respectively attached to the multiple bosses (105), the peripheral side of any boss (105) is flush with the peripheral side of the first isolation sheet (202) thereon.

6. The supporting device according to claim 1 or 2, characterized in that: The support structure (1) comprises: a third plate, a second support column and a fourth plate, the two ends of the second support column are respectively vertically connected to the third plate and the fourth plate, so that the support structure (1) presents an I-shaped structure, and the plane of the third plate away from the second support column is the first support surface (101); The first isolation structure (2) comprises: a second isolation sheet, the second isolation sheet is adhered to the first supporting surface (101), and the second isolation sheet covers the entire first supporting surface (101), a plurality of second isolation sheets are spaced apart and adhered to cover a portion of the first supporting surface (101), or the second isolation sheet has a plurality of through holes and covers at least one edge of the first supporting surface (101).

7. The supporting device according to claim 1, characterized in that: The first isolation structure (2) is a structure made of tantalum material.

8. The supporting device according to claim 1, characterized in that: Also includes: A second isolation structure (3) is arranged on a side of the support structure (1) facing away from the first isolation structure (2), and the side of the second isolation structure (3) facing away from the support structure (1) can be supported on a supporting plane; Wherein, the thermal conductivity of the second isolation structure (3) is lower than the thermal conductivity of the support structure (1).

9. The supporting device according to claim 8, characterized in that: The second isolation structure (3) is a structure made of zirconium oxide or aluminum oxide material.

10. A sapphire crystal growth device, characterized in that: include: The support device according to any one of claims 1 to 9; A crucible (4) detachably arranged on the second supporting surface (201) of the supporting device; The heating device is at least arranged around the circumference of the crucible (4).

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