Plasma arc ignition device for semiconductor tail gas treatment

Abstract

The utility model relates to the technical field of arc ignition, in particular to a plasma arc ignition device for semiconductor tail gas treatment, which comprises a cooling flange seat, a cathode head is mounted in the cooling flange seat, a first power connection hole is formed in the top of the cathode head, a first tungsten block is fixedly connected to the bottom of the cathode head, and a second tungsten block is fixedly connected to the bottom of the first tungsten block. A cathode flange is installed at the bottom of the cooling flange base, an anode flange is installed at the bottom of the cathode flange, a second power connection hole is formed in the outer surface of the anode flange, an anode head is installed in the anode flange, a fifth inner cavity is formed in the anode head, and a second tungsten block is fixedly connected into the fifth inner cavity. And the anode head is positioned right below the cathode head. The high-temperature ignition device is reasonable in structure, and can form a jet-shaped electric arc at the bottom of the anode head to generate high temperature, so that the ignition effect is realized.

Description

Technical Field

[0001] The utility model relates to the field of arc ignition, in particular to a plasma arc ignition device for semiconductor tail gas treatment. Background Art

[0002] Arc ignition uses the discharge phenomenon of an arc to ignite gas or other flammable substances. The principle is based on the phenomenon of electric spark discharge. When the voltage between the two electrodes reaches a certain level, the electrons in the air will be accelerated and move at high speed. When the speed of electron movement exceeds the speed of air molecules, a large number of collisions between electrons and gas molecules will occur, releasing huge energy and forming an arc.

[0003] Semiconductor exhaust gas contains a variety of harmful substances. When treating semiconductor exhaust gas, combustion treatment method is generally adopted. When burning semiconductor exhaust gas, it is necessary to ignite the exhaust gas. Conventional flame-spraying structure is easy to be extinguished due to the excessive flow rate of exhaust gas and compressed air, which is not convenient for combustion treatment of semiconductor exhaust gas. Utility Model Content

[0004] The utility model aims to solve the shortcomings in the prior art and proposes a plasma arc ignition device for semiconductor tail gas treatment.

[0005] In order to achieve the above-mentioned purpose, the utility model adopts the following technical scheme: a plasma arc ignition device for semiconductor exhaust gas treatment, comprising a cooling flange seat, a cathode head is installed inside the cooling flange seat, a first power connection hole is opened on the top of the cathode head, a first tungsten block is fixedly connected to the bottom of the cathode head, a cathode flange is installed at the bottom of the cooling flange seat, an anode flange is installed at the bottom of the cathode flange, a second power connection hole is opened on the outer surface of the anode flange, an anode head is installed inside the anode flange, a fifth inner cavity is opened inside the anode head, a second tungsten block is fixedly connected to the inside of the fifth inner cavity, and the anode head is located directly below the cathode head.

[0006] As a further description of the above technical solution:

[0007] A first inner cavity is defined inside the cooling flange seat, and the cathode head is located inside the first inner cavity.

[0008] As a further description of the above technical solution:

[0009] A second inner cavity is provided inside the cathode head, and a discharge hole is provided on a side of the cathode head. There are multiple discharge holes, which are communicated with the second inner cavity and are located inside the first inner cavity.

[0010] As a further description of the above technical solution:

[0011] A third inner cavity is formed inside the cathode flange, and a nitrogen inlet is formed on the outer wall of the cathode flange. The nitrogen inlet is communicated with the third inner cavity.

[0012] As a further description of the above technical solution:

[0013] A fourth inner cavity is defined inside the anode flange, the anode head is located inside the fourth inner cavity, a drain pipe is fixedly connected to the outer wall of the anode flange, one end of the drain pipe is located inside the fourth inner cavity, and the other end of the drain pipe is located outside the anode flange.

[0014] As a further description of the above technical solution:

[0015] The outer surface of the cooling flange seat is provided with a connecting thread, and the outer surface of the cooling flange seat is threadedly connected to an end cover.

[0016] As a further description of the above technical solution:

[0017] The cathode head is made of red copper, and the anode head is made of red copper.

[0018] The utility model has the following beneficial effects:

[0019] 1. Compared with the prior art, the plasma arc ignition device for semiconductor exhaust gas treatment is connected to the first power connection hole on the cathode head and the second power connection hole on the anode head respectively through the cathode head, the anode head and the cathode flange during use. Then, a certain flow of nitrogen is continuously introduced into the arc ignition device through the nitrogen inlet. The nitrogen will enter the fifth inner cavity and fill the gap between the first tungsten block and the second tungsten block. At this time, when the power is turned on, a jet-like arc can be formed at the bottom of the anode head to generate high temperature, thereby achieving an ignition effect.

[0020] 2. Compared with the prior art, the plasma arc ignition device for semiconductor exhaust gas treatment, through the cooling flange seat, cathode head, cathode flange, anode flange, anode head, when in use, introduces cooling water into the second inner cavity, the cooling water will be discharged from the discharge hole on the cathode head, flow through the cooling flange seat and the cathode flange to reach the fourth inner cavity, cool the outer surface of the anode head, and finally be discharged from the drain pipe, which can effectively reduce the temperature of the internal components of the plasma arc ignition device when in use and extend the service life of the plasma arc ignition device. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 This is a schematic diagram of the overall structure of a plasma arc ignition device for semiconductor tail gas treatment proposed by the utility model;

[0022] Figure 2 This is a cross-sectional view of the internal structure of a plasma arc ignition device for semiconductor tail gas treatment proposed by the utility model from a first perspective;

[0023] Figure 3 This is a cross-sectional view of the internal structure of a plasma arc ignition device for semiconductor tail gas treatment proposed by the utility model from a second viewing angle;

[0024] Figure 4 This is a schematic diagram of the cooling flange seat structure of a plasma arc ignition device for semiconductor tail gas treatment proposed by the utility model;

[0025] Figure 5 This is a schematic diagram of the cathode head structure of a plasma arc ignition device for semiconductor tail gas treatment proposed by the utility model;

[0026] Figure 6 This is a schematic diagram of the cathode flange structure of a plasma arc ignition device for semiconductor tail gas treatment proposed by the utility model;

[0027] Figure 7 This is a schematic diagram of the anode flange structure of a plasma arc ignition device for semiconductor tail gas treatment proposed by the utility model;

[0028] Figure 8 The utility model discloses a schematic diagram of the anode head structure of a plasma arc ignition device for semiconductor tail gas treatment.

[0029] Legend:

[0030] 1. Cooling flange seat; 101. First inner cavity; 102. Connecting thread; 2. Cathode head; 201. Second inner cavity; 202. Discharge hole; 203. First power connection hole; 204. First tungsten block; 3. Cathode flange; 301. Third inner cavity; 302. Nitrogen inlet; 4. Anode flange; 401. Fourth inner cavity; 402. Drain pipe; 403. Second power connection hole; 5. Anode head; 501. Fifth inner cavity; 502. Second tungsten block; 6. End cover. DETAILED DESCRIPTION

[0031] Reference Figure 1-8The utility model provides a plasma arc ignition device for semiconductor tail gas treatment: comprising a cooling flange seat 1, a cathode head 2 is installed inside the cooling flange seat 1, a first inner cavity 101 is opened inside the cooling flange seat 1, the cathode head 2 is located inside the first inner cavity 101, the cathode head 2 is made of copper, a first power connection hole 203 is opened on the top of the cathode head 2, when in use, the power supply is connected to the first power connection hole 203 through a wire, and the cathode head 2 can be powered, a first tungsten block 204 is fixedly connected to the bottom of the cathode head 2, so as to generate an arc after power is turned on, a cathode flange 3 is installed at the bottom of the cooling flange seat 1, a third inner cavity 301 is opened inside the cathode flange 3, the bottom of the cooling flange seat 1 is located in the third inner cavity 301, a nitrogen inlet 302 is opened on the outer wall of the cathode flange 3, the nitrogen inlet 302 is connected to the third inner cavity 301, and nitrogen is introduced to fill the space inside the plasma arc ignition device, so as to generate an arc The arc is ignited, an anode flange 4 is installed at the bottom of the cathode flange 3, and a second power connection hole 403 is provided on the outer surface of the anode flange 4. When in use, the power supply is connected to the second power connection hole 403 through a wire, and an anode head 5 is installed inside the anode flange 4. The material of the anode head 5 is copper. A fifth inner cavity 501 is provided inside the anode head 5 to form an arc channel. A second tungsten block 502 is fixedly connected to the inside of the fifth inner cavity 501. The anode head 5 is located directly below the cathode head 2. When in use, the power supply is respectively connected to the first power connection hole 203 on the cathode head 2 and the second power connection hole 403 on the anode head 4, and then a certain flow of nitrogen is continuously introduced into the arc ignition device through the nitrogen inlet 302. The nitrogen will enter the fifth inner cavity 501 and fill the gap between the first tungsten block 204 and the second tungsten block 502. At this time, when the power supply is energized, a jet-like arc can be formed at the bottom of the anode head 5 to generate high temperature, thereby achieving an ignition effect.

[0032] A second inner cavity 201 is provided inside the cathode head 2, and a discharge hole 202 is provided on the side of the cathode head 2. The number of the discharge holes 202 is plural, and the discharge holes 202 are connected with the second inner cavity 201. The discharge holes 202 are located inside the first inner cavity 101. Cooling water is added to the second inner cavity 201, and the cooling water can be discharged from the discharge hole 202 and enter the first inner cavity 101. A fourth inner cavity 401 is provided inside the anode flange 4, and the anode head 5 is located inside the fourth inner cavity 401. A drain pipe 402 is fixedly connected to the outer wall of the anode flange 4. The cooling water enters the first inner cavity 101 and flows downward into the fourth inner cavity 401 to cool the outer surface of the anode head 5. The used cooling water is discharged from the drain pipe 402. One end of the drain pipe 402 is located inside the fourth inner cavity 401, and the other end of the drain pipe 402 is located outside the anode flange 4.

[0033] The outer surface of the cooling flange seat 1 is provided with a connecting thread 102 , and the outer surface of the cooling flange seat 1 is threadedly connected with an end cover 6 , which has a limiting effect on the cathode head 2 .

[0034] Working principle: When in use, the power supply is connected to the first power connection hole 203 on the cathode head 2 and the second power connection hole 403 on the anode head 4 respectively, and then a certain flow of nitrogen is continuously introduced into the arc ignition device through the nitrogen inlet 302. The nitrogen will enter the fifth inner cavity 501 and fill the gap between the first tungsten block 204 and the second tungsten block 502. At this time, when the power supply is turned on, a jet-like arc can be formed at the bottom of the anode head 5 to generate high temperature, thereby achieving the ignition effect.

[0035] Finally, it should be noted that the above is only a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art can still modify the technical solutions described in the aforementioned embodiments or make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A plasma arc ignition device for semiconductor tail gas treatment, comprising a cooling flange seat (1), characterized in that: A cathode head (2) is installed inside the cooling flange seat (1), a first power connection hole (203) is provided on the top of the cathode head (2), a first tungsten block (204) is fixedly connected to the bottom of the cathode head (2), a cathode flange (3) is installed at the bottom of the cooling flange seat (1), an anode flange (4) is installed at the bottom of the cathode flange (3), a second power connection hole (403) is provided on the outer surface of the anode flange (4), an anode head (5) is installed inside the anode flange (4), a fifth inner cavity (501) is provided inside the anode head (5), a second tungsten block (502) is fixedly connected to the inside of the fifth inner cavity (501), and the anode head (5) is located directly below the cathode head (2).

2. The plasma arc ignition device for semiconductor tail gas treatment according to claim 1, characterized in that: A first inner cavity (101) is provided inside the cooling flange seat (1), and the cathode head (2) is located inside the first inner cavity (101).

3. The plasma arc ignition device for semiconductor tail gas treatment according to claim 2, characterized in that: A second inner cavity (201) is provided inside the cathode head (2), and a discharge hole (202) is provided on the side of the cathode head (2). There are a plurality of discharge holes (202), and the discharge holes (202) are connected to the second inner cavity (201). The discharge holes (202) are located inside the first inner cavity (101).

4. The plasma arc ignition device for semiconductor tail gas treatment according to claim 1, characterized in that: A third inner cavity (301) is provided inside the cathode flange (3), a nitrogen inlet (302) is provided on the outer wall of the cathode flange (3), and the nitrogen inlet (302) is connected to the third inner cavity (301).

5. The plasma arc ignition device for semiconductor tail gas treatment according to claim 1, characterized in that: A fourth inner cavity (401) is provided inside the anode flange (4), the anode head (5) is located inside the fourth inner cavity (401), a drain pipe (402) is fixedly connected to the outer wall of the anode flange (4), one end of the drain pipe (402) is located inside the fourth inner cavity (401), and the other end of the drain pipe (402) is located outside the anode flange (4).

6. The plasma arc ignition device for semiconductor tail gas treatment according to claim 1, characterized in that: The outer surface of the cooling flange seat (1) is provided with a connecting thread (102), and the outer surface of the cooling flange seat (1) is threadedly connected to an end cover (6).

7. The plasma arc ignition device for semiconductor tail gas treatment according to claim 1, characterized in that: The cathode head (2) is made of red copper, and the anode head (5) is made of red copper.

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