Semiconductor single crystal silicon carbide microwave sintering furnace

Abstract

The utility model discloses a semiconductor single crystal silicon carbide microwave sintering furnace which comprises a sintering furnace body, a feeding pipe is installed at the upper end of the sintering furnace body, four supporting blocks are connected to the periphery of the upper end of the feeding pipe, clamping grooves are formed in the supporting blocks and communicated with the feeding pipe, limiting blocks are fixed to one sides of the upper ends of the supporting blocks, and the limiting blocks are connected with the feeding pipe. A limiting block is arranged at the upper end of the feeding pipe, a limiting hole is formed in the limiting block, a sealing cover is arranged at the upper end of the feeding pipe, a first sealing block is fixed in the sealing cover, four second sealing blocks are fixed on the periphery of the first sealing block, the upper ends of the second sealing blocks are slidably connected with sliding blocks, and the upper end of the first sealing block is rotatably connected with a screw rod. According to the silicon carbide microwave sintering furnace, the tightness of the silicon carbide microwave sintering furnace after being sealed can be guaranteed, the silicon carbide microwave sintering furnace can be quickly sealed, the labor cost is reduced, the opening and closing efficiency is improved, meanwhile, the firmness of the silicon carbide microwave sintering furnace after being sealed can be guaranteed, and practicability and convenience are greatly enhanced.

Description

Technical Field

[0001] The utility model belongs to the technical field of single crystal silicon carbide microwave sintering furnace, and in particular relates to a semiconductor single crystal silicon carbide microwave sintering furnace. Background Art

[0002] Single crystal silicon carbide is an excellent material with high hardness, high wear resistance and high refractoriness, and is used as wear-resistant material and other industrial materials.

[0003] At present, a microwave sintering furnace is usually used for processing semiconductor single crystal silicon carbide. After the traditional microwave sintering furnace is closed, its cover is connected by a snap connection or one end is snapped together, which has the risk of unstable closure. In addition, when the snap connection is used, manual operation is required one by one when opening, which increases labor costs and is very inconvenient. At the same time, it also reduces production efficiency. For this reason, we propose a semiconductor single crystal silicon carbide microwave sintering furnace to solve the above problems. Utility Model Content

[0004] The utility model aims to solve the shortcomings in the prior art and proposes a semiconductor single crystal silicon carbide microwave sintering furnace.

[0005] In order to achieve the above purpose, the utility model adopts the following technical solutions:

[0006] A semiconductor single crystal silicon carbide microwave sintering furnace comprises a sintering furnace body, wherein a feed pipe is installed at the upper end of the sintering furnace body, four support blocks are connected around the upper end of the feed pipe, a slot is provided on the support block, and the slot is communicated with the feed pipe, a limit block is fixed on one side of the upper end of the support block, a limit hole is provided on the limit block, a cover is provided on the upper end of the feed pipe, a first sealing block is fixed in the cover, four second sealing blocks are fixed around the first sealing block, a slider is slidably connected to the upper end of the second sealing block, a screw is rotatably connected to the upper end of the first sealing block, one end of the screw passes through the cover and extends to the upper end of the cover, a rotating wheel is connected to the upper end of the screw, a moving block is threadedly sleeved on the screw, four connecting rods are rotatably connected around the moving block, and one connecting rod on the same side is rotatably connected to a slider on the same side, a mounting plate is fixed on one side of the upper end of the slider, an insert block is fixed on one side of the mounting plate, and one end of the insert block passes through the side wall of the cover and corresponds to the limit hole.

[0007] Preferably, a guide rail is fixed to the upper end of the second sealing block, and a sliding block on the same side is installed on a guide rail on the same side.

[0008] Preferably, four openings are provided at equal intervals around a circumference of the sealing cover, one end of the second sealing block passes through the opening, and the opening corresponds to the supporting block.

[0009] Preferably, a heat insulation layer is provided around the first sealing block.

[0010] Preferably, a crank is fixed to one side of the rotating wheel.

[0011] Preferably, the first sealing block and the second sealing block are integrally formed.

[0012] In the utility model, when silicon carbide processing is required, the silicon carbide material is placed in a microwave sintering furnace, and then the sealing cover is buckled. When buckling the sealing cover, the first sealing block is placed in the feed pipe, and the four second sealing blocks are placed in the card slot. At the same time, the support block is clamped on the sealing cover through the opening, and then the crank is turned to drive the rotating wheel to rotate, thereby realizing the rotation of the screw. As the screw rotates, the moving block is driven to move downward, and as the moving block descends, one end of the connecting rod is driven to descend, and then the slider is pushed to move outward. As the slider moves, the plug block is inserted into the limiting hole, thereby realizing sealing and fixation.

[0013] The silicon carbide microwave sintering furnace in the utility model can not only ensure the tightness after sealing, but also can seal it quickly, reducing labor costs, improving the efficiency of opening and closing, and at the same time can ensure the firmness after sealing, greatly enhancing practicality and convenience. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a structural diagram of the utility model;

[0015] Figure 2 This is a diagram of the internal structure of the cover of the utility model;

[0016] Figure 3 This is a structural diagram of the first sealing block and the second sealing block of the utility model;

[0017] Figure 4 This is an external structural diagram of the cover of the utility model.

[0018] In the figure: 1 limit hole, 2 limit block, 3 feed pipe, 4 sintering furnace body, 5 slot, 6 support block, 7 rotating wheel, 8 screw, 9 cover, 10 insert block, 11 mounting plate, 12 guide rail, 13 first sealing block, 14 insulation layer, 15 slider, 16 connecting rod, 17 moving block, 18 second sealing block, 19 crank. DETAILED DESCRIPTION

[0019] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all of the embodiments.

[0020] Reference Figure 1-4A semiconductor single crystal silicon carbide microwave sintering furnace comprises a sintering furnace body 4, a feed pipe 3 is installed on the upper end of the sintering furnace body 4, four support blocks 6 are connected around the upper end of the feed pipe 3, a card slot 5 is provided on the support block 6, and the card slot 5 is connected to the feed pipe 3, a limiting block 2 is fixed on one side of the upper end of the support block 6, a limiting hole 1 is provided on the limiting block 2, and the combination of the limiting hole 1 and the insert block 10 can effectively improve the firmness of the installation, and it is limited from four directions at the same time to ensure the firmness and stability of the closure.

[0021] A sealing cover 9 is provided at the upper end of the feed pipe 3, a first sealing block 13 is fixed inside the sealing cover 9, four second sealing blocks 18 are fixed around the first sealing block 13, a heat insulation layer 14 is provided around the first sealing block 13, the combination of the four second sealing blocks 18, the first sealing block 13 and the heat insulation layer 14 effectively improves the tightness of the seal and ensures the stability of sintering, the first sealing block 13 and the second sealing block 18 are integrally formed, further enhancing the stability and firmness.

[0022] The upper end of the second sealing block 18 is slidably connected to a slider 15 , to which a guide rail 12 is fixed, and a slider 15 on the same side is installed on a guide rail 12 on the same side, and the movement of the slider 15 drives the insert block 10 to move.

[0023] The upper end of the first sealing block 13 is rotatably connected to a screw rod 8, one end of the screw rod 8 passes through the cover 9 and extends to the upper end of the cover 9, the upper end of the screw rod 8 is connected to a rotating wheel 7, and a crank 19 is fixed to one side of the rotating wheel 7. The setting of the crank 19 facilitates opening or closing, which can be more labor-saving and convenient according to mechanics.

[0024] A moving block 17 is threadedly sleeved on the screw rod 8, and four connecting rods 16 are rotatably connected to one circle of the moving block 17, and a connecting rod 16 on the same side is rotatably connected to a slider 15 on the same side, and a mounting plate 11 is fixed to one side of the upper end of the slider 15, and an insert block 10 is fixed to one side of the mounting plate 11, and one end of the insert block 10 passes through the side wall of the cover 9 and corresponds to the limiting hole 1, and four openings are evenly spaced around the cover 9, one end of the second sealing block 18 passes through the opening, and the opening corresponds to the support block 6, and the correspondence between the opening and the support block 6 can enable the support block 6 to be clamped in the opening, and the cover 9 at the upper end is supported by the support block 6.

[0025] In the utility model, when silicon carbide processing is required, the silicon carbide material is placed in a microwave sintering furnace, and then the sealing cover 9 is buckled. When the sealing cover 9 is buckled, the first sealing block 13 is placed in the feed pipe 3, and the four second sealing blocks 18 are placed in the card slot 5. At the same time, the support block 6 is clamped on the sealing cover 9 through the opening, and then the crank 19 is turned to drive the rotating wheel 7 to rotate, thereby realizing the rotation of the screw 8. As the screw 8 rotates, the moving block 17 is driven to move downward. As the moving block 17 descends, one end of the connecting rod 16 is driven to descend, and then the slider 15 is pushed to move outward. As the slider 15 moves, the plug block 10 is plugged into the limiting hole 1, and then sealing and fixation are achieved.

[0026] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes within the technical scope disclosed by the present invention according to the technical scheme and the utility model concept of the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A semiconductor single crystal silicon carbide microwave sintering furnace, comprising a sintering furnace body (4), characterized in that: A feed pipe (3) is installed at the upper end of the sintering furnace body (4), and four support blocks (6) are connected around the upper end of the feed pipe (3), and a slot (5) is provided on the support block (6), and the slot (5) and the feed pipe (3) are in communication, and a limit block (2) is fixed on one side of the upper end of the support block (6), and a limit hole (1) is provided on the limit block (2), and a sealing cover (9) is provided on the upper end of the feed pipe (3), and a first sealing block (13) is fixed in the sealing cover (9), and four second sealing blocks (18) are fixed around the first sealing block (13), and a slider (15) is slidably connected to the upper end of the second sealing block (18), and the first sealing block The upper end of the screw rod (13) is rotatably connected to a screw rod (8), one end of the screw rod (8) penetrates the cover (9) and extends to the upper end of the cover (9), the upper end of the screw rod (8) is connected to a rotating wheel (7), a moving block (17) is threadedly sleeved on the screw rod (8), one circle of the moving block (17) is rotatably connected to four connecting rods (16), and a connecting rod (16) on the same side is rotatably connected to a slider (15) on the same side, a mounting plate (11) is fixed to one side of the upper end of the slider (15), an insert block (10) is fixed to one side of the mounting plate (11), and one end of the insert block (10) penetrates the side wall of the cover (9) and corresponds to the limiting hole (1).

2. The semiconductor single crystal silicon carbide microwave sintering furnace according to claim 1, characterized in that: A guide rail (12) is fixed to the upper end of the second sealing block (18), and a sliding block (15) on the same side is installed on a guide rail (12) on the same side.

3. The semiconductor single crystal silicon carbide microwave sintering furnace according to claim 1, characterized in that: The sealing cover (9) is provided with four openings at equal intervals around a circumference, one end of the second sealing block (18) passes through the opening, and the opening corresponds to the supporting block (6).

4. The semiconductor single crystal silicon carbide microwave sintering furnace according to claim 1, characterized in that: A heat insulation layer (14) is provided around the first sealing block (13).

5. The semiconductor single crystal silicon carbide microwave sintering furnace according to claim 1, characterized in that: A crank (19) is fixed to one side of the rotating wheel (7).

6. The semiconductor single crystal silicon carbide microwave sintering furnace according to claim 1, characterized in that: The first sealing block (13) and the second sealing block (18) are integrally formed.

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