Hybrid integrated amplifier module and radio frequency equipment

Abstract

The utility model provides a hybrid integrated amplifier module and radio frequency equipment, and relates to the technical field of radio frequency. According to the application, the low-noise amplification circuit and the power amplification circuit are arranged on the device mounting surface of the packaging carrier plate in a mutually connected manner, so that the power amplification circuit can perform signal amplification processing on the radio-frequency signal processed by the low-noise amplification circuit, and then the metal shielding cover is arranged on the device mounting surface of the packaging carrier plate; the metal shielding cover is arranged on the low-noise amplifying circuit, so that the metal shielding cover at least covers a low-noise amplifier included in the low-noise amplifying circuit and is grounded through the packaging carrier plate, and then a plastic packaging layer used for covering a device mounting surface, the low-noise amplifying circuit, the power amplifying circuit and the metal shielding cover is formed on the device mounting surface of the packaging carrier plate. Therefore, the obtained hybrid integrated amplifier module has the advantages of low manufacturing cost, low design difficulty, high circuit integration level, small circuit layout size, short development period, high debuggeability and the like.

Description

Technical Field

[0001] The present application relates to the field of radio frequency (RF) technology, and in particular to a hybrid integrated amplifier module and a radio frequency device. Background Art

[0002] With the continuous development of science and technology, radio frequency technology has been widely used in various industries (for example, television, radio, mobile phones, radar, satellite positioning, automatic identification systems, etc.). In the actual application of radio frequency technology, it is often necessary to use a low-noise amplifier to amplify the received weak radio frequency signal and minimize the noise introduced by the amplifier. Then, a power amplifier is needed to amplify the radio frequency signal processed by the low-noise amplifier to a sufficiently large signal power to ensure that the final radio frequency signal can meet the expected communication signal requirements.

[0003] At present, in the application process of radio frequency technology, the MMIC (Monolithic Microwave Integrated Circuit) process can be usually used to integrate the low noise amplifier and the power amplifier together, or the low noise amplifier and the power amplifier can be respectively packaged by the plastic packaging process and then connected for signal transmission. Among them, as for the former amplifier hybrid solution corresponding to the MMIC process, it usually has the advantages of high circuit integration and small circuit layout size, but actually has the defects of high production cost and high design difficulty, and requires multiple tape-out iterations to ensure that the final hybrid amplifier product has the expected performance, and the overall product development cycle is long; and as for the latter amplifier hybrid solution corresponding to the plastic packaging process, it usually has the advantages of low production cost, low design difficulty, high debuggability, and short development cycle, but actually has the defects of large circuit layout size and low circuit integration, which cannot meet the customer's size requirements and circuit integration requirements. Therefore, how to provide a hybrid integrated amplifier module with low production cost, low design difficulty, high circuit integration, small circuit layout size, short development cycle and high debuggability is an important technical problem that needs to be solved today. Utility Model Content

[0004] In view of this, the purpose of the present application is to provide a hybrid integrated amplifier module and a radio frequency device, which can be packaged by integrating a low-noise amplifier circuit and a power amplifier circuit into the same packaging carrier, and using a metal shielding cover to weaken the electromagnetic interference between the low-noise amplifier circuit and the power amplifier circuit, so that the final hybrid integrated amplifier module has the advantages of low production cost, low design difficulty, high circuit integration, small circuit layout size, short development cycle and high debuggability.

[0005] In order to achieve the above purpose, the technical solution adopted in the embodiment of the present application is as follows:

[0006] In a first aspect, the present application provides a hybrid integrated amplifier module, the amplifier module comprising a package carrier, a low-noise amplifier circuit, a power amplifier circuit and a metal shielding cover;

[0007] The low-noise amplifier circuit and the power amplifier circuit are connected to each other and are disposed on the device mounting surface of the packaging carrier, wherein the power amplifier circuit is used to amplify the radio frequency signal processed by the low-noise amplifier circuit;

[0008] The metal shielding cover is arranged on the device mounting surface of the packaging carrier and at least covers the low noise amplifier included in the low noise amplifier circuit, wherein the metal shielding cover is grounded via the packaging carrier;

[0009] A plastic encapsulation layer is formed on the device mounting surface of the packaging carrier, wherein the plastic encapsulation layer is used to cover the device mounting surface, the low-noise amplifier circuit, the power amplifier circuit and the metal shielding cover.

[0010] In an optional implementation, the low-noise amplifier circuit further includes an amplifier driving circuit and a first output matching circuit, and the power amplifier circuit includes an input matching circuit, a power amplifier, and a second output matching circuit;

[0011] The amplifier driving circuit is electrically connected to the power supply terminal of the low noise amplifier, wherein the amplifier driving circuit is used to drive the low noise amplifier to operate;

[0012] The input end of the low noise amplifier is used to receive a radio frequency signal, the output end of the low noise amplifier is electrically connected to the input end of the first output matching circuit, and the radio frequency signal processed by the low noise amplifier is transmitted to the outside through the output end of the first output matching circuit;

[0013] The input end of the input matching circuit is electrically connected to the output end of the first output matching circuit, the input end of the power amplifier is electrically connected to the output end of the input matching circuit, the output end of the power amplifier is electrically connected to the input end of the second output matching circuit, and the power amplifier outputs the RF signal processed by the power amplifier through the output end of the second output matching circuit.

[0014] In an optional embodiment, an input terminal, a ground terminal and an output terminal are arranged on a terminal bearing surface of the package carrier away from the device mounting surface;

[0015] The input terminal is electrically connected to the input end of the low noise amplifier through a metal via penetrating the package carrier, wherein the input terminal is used to receive a radio frequency signal to be processed;

[0016] The ground terminal is electrically connected to the metal shielding cover through a metal via, and is used to set the metal shielding cover to a ground potential;

[0017] The output terminal is electrically connected to the output end of the second output matching circuit through a metal via, wherein the output terminal is used to output a target radio frequency signal obtained by processing the radio frequency signal to be processed through the low-noise amplifier circuit and the power amplifier circuit.

[0018] In an optional embodiment, the metal shielding cover is a semi-enclosed cover, and the metal shielding cover covers both the amplifier driving circuit and the low-noise amplifier, wherein the projection areas of the metal shielding cover and the input terminal on the device mounting surface do not intersect each other.

[0019] In an optional implementation, the low noise amplifier is implemented using a gallium arsenide transistor, and the power amplifier is implemented using a gallium nitride transistor.

[0020] In an optional implementation, the projection areas of the low noise amplifier and the power amplifier respectively on the device mounting surface are spaced apart and distributed close to the center position of the surface of the device mounting surface.

[0021] In an optional implementation, the material of the metal shielding cover includes any one of silver, copper, tin, aluminum, and nickel, and the material of the plastic sealing layer is epoxy resin.

[0022] In an optional embodiment, an impedance migration attenuation layer is formed on the device mounting surface of the packaging carrier;

[0023] The impedance migration attenuation layer is arranged between the plastic packaging layer and the device mounting surface, and covers and packages the second output matching circuit included in the power amplifier circuit, wherein the impedance migration attenuation layer is used to weaken the impedance migration effect of the second output matching circuit.

[0024] In an optional implementation, the impedance migration attenuation layer is implemented using a low-loss and low-dielectric constant molding compound.

[0025] In a second aspect, the present application provides a radio frequency device, comprising at least one hybrid integrated amplifier module as described in any one of the aforementioned embodiments.

[0026] In this case, the beneficial effects of the embodiments of the present application may include the following:

[0027] The present application arranges a low-noise amplifier circuit and a power amplifier circuit on a device mounting surface of a packaging substrate in interconnection, so that the power amplifier circuit can amplify the radio frequency signal processed by the low-noise amplifier circuit, and then arranges a metal shielding cover on the device mounting surface of the packaging substrate so that it at least covers the low-noise amplifier included in the low-noise amplifier circuit and is grounded through the packaging substrate, and then forms a plastic packaging layer on the device mounting surface of the packaging substrate for covering the device mounting surface, the low-noise amplifier circuit, the power amplifier circuit and the metal shielding cover, so that the low-noise amplifier circuit and the power amplifier circuit are integrated into the same packaging substrate for packaging, and the metal shielding cover is used to weaken the electromagnetic interference between the low-noise amplifier circuit and the power amplifier circuit, so that the finally obtained hybrid integrated amplifier module has the advantages of low manufacturing cost, low design difficulty, high circuit integration, small circuit layout size, short development cycle and high debuggability.

[0028] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, preferred embodiments are specifically cited below and described in detail with reference to the attached drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0030] Figure 1 One of the schematic diagrams of the composition of the first hybrid integrated amplifier module provided in the embodiment of the present application;

[0031] Figure 2 The second schematic diagram of the composition of the first hybrid integrated amplifier module provided in the embodiment of the present application;

[0032] Figure 3 A schematic diagram of the composition of a second hybrid integrated amplifier module provided in an embodiment of the present application;

[0033] Figure 4 A schematic diagram of the composition of a third hybrid integrated amplifier module provided in an embodiment of the present application;

[0034] Figure 5 A schematic diagram of the composition of the fourth hybrid integrated amplifier module provided in an embodiment of the present application.

[0035] Icons: 10-hybrid integrated amplifier module; 11-package substrate; 12-low noise amplifier circuit; 13-power amplifier circuit; 14-metal shielding cover; 15-plastic sealing layer; 121-low noise amplifier; 122-amplifier driving circuit; 123-first output matching circuit; 131-input matching circuit; 132-power amplifier; 133-second output matching circuit; 16-input terminal; 17-ground terminal; 18-output terminal; 19-impedance migration attenuation layer. DETAILED DESCRIPTION

[0036] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.

[0037] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for which protection is sought, but merely represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0038] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0039] In the description of the present application, it should be understood that the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside", etc. indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, or the positions or positional relationships in which the product of the application is usually placed when in use, or the positions or positional relationships commonly understood by those skilled in the art, which are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0040] In the description of this application, it should also be noted that, unless otherwise clearly specified and limited, the terms "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0041] In conjunction with the accompanying drawings, some embodiments of the present application are described in detail below. In the absence of conflict, the following embodiments and features in the embodiments can be combined with each other.

[0042] Please refer to Figure 1 and Figure 2 ,in Figure 1 is one of the composition diagrams of the first hybrid integrated amplifier module 10 provided in the embodiment of the present application, Figure 2 2 is a schematic diagram of the composition of the first hybrid integrated amplifier module 10 provided in the embodiment of the present application. In the embodiment of the present application, Figure 1 and Figure 2 The first hybrid integrated amplifier module 10 shown can have the advantages of low manufacturing cost, low design difficulty, high circuit integration, small circuit layout size, short development cycle and high debuggability, wherein the hybrid integrated amplifier module 10 can encapsulate a carrier board 11, a low-noise amplifier circuit 12, a power amplifier circuit 13 and a metal shielding cover 14.

[0043] In this embodiment, the package carrier 11 may include a device mounting surface and a terminal bearing surface that are separated from each other, wherein a plurality of pads are distributed on the device mounting surface so that the components to be deployed can be welded to the pads by welding and / or wire bonding to achieve the deployment effect of the components to be deployed on the package carrier 11; a plurality of terminals may be installed on the terminal bearing surface, and each terminal serves as a pin of the hybrid integrated amplifier module 10. In one implementation of this embodiment, the package carrier 11 is implemented by a BT (Bismaleimide Triazine) resin-based copper-embedded package carrier.

[0044] In this embodiment, the low-noise amplifier circuit 12 and the power amplifier circuit 13 are interconnected and disposed on the device mounting surface of the packaging substrate 11, wherein the signal output end of the low-noise amplifier circuit 12 is electrically connected to the signal input end of the power amplifier circuit 13; the low-noise amplifier circuit 12 is used to amplify the received weak radio frequency signal and minimize the noise introduced by the amplifier; the power amplifier circuit 13 is used to amplify the radio frequency signal processed by the low-noise amplifier circuit 12 to amplify the corresponding radio frequency signal to the desired signal power.

[0045] In this embodiment, the metal shield 14 is disposed on the device mounting surface of the package substrate 11 and covers at least the low noise amplifier 121 included in the low noise amplifier circuit 12, wherein the metal shield 14 is grounded via the package substrate 11 to isolate the low noise amplifier circuit 12 from the power amplifier circuit 13 from electromagnetic interference, thereby effectively weakening the electromagnetic interference between the low noise amplifier circuit 12 and the power amplifier circuit 13, ensuring that the low noise amplifier circuit 12 and the power amplifier circuit 13 can be integrated into the same package substrate 11 and operate without interfering with each other. The material of the metal shield 14 includes any one of silver, copper, tin, aluminum, and nickel.

[0046] In an implementation manner of this embodiment, the metal shielding cover 14 may only cover the low noise amplifier 121 with high gain on the device mounting surface.

[0047] In this embodiment, the plastic encapsulation layer 15 can be formed on the device mounting surface of the packaging substrate 11 by injection molding, so that the plastic encapsulation layer 15 covers the parts on the device mounting surface that are not blocked by the components and the metal shielding cover 14, the outer surface of the components of the low-noise amplifier circuit 12 that are not blocked by the metal shielding cover 14, the outer surface of the components of the power amplifier circuit 13, and the outer surface of the metal shielding cover 14, so as to achieve the circuit packaging effect of the low-noise amplifier circuit 12 and the power amplifier circuit 13 on the same packaging substrate 11, and effectively improve the circuit integration and debuggability of the hybrid integrated amplifier module 10, and reduce the manufacturing cost, design difficulty, circuit layout size and development cycle of the hybrid integrated amplifier module 10. Among them, the plastic encapsulation layer 15 can be prepared by using low-cost conventional epoxy resin material.

[0048] Therefore, the first hybrid integrated amplifier module 10 provided in the present application can integrate the low-noise amplifier circuit 12 and the power amplifier circuit 13 onto the same packaging carrier 11 for packaging, and use the metal shielding cover 14 to weaken the electromagnetic interference between the low-noise amplifier circuit 12 and the power amplifier circuit 13, so as to ensure that the corresponding hybrid integrated amplifier module 10 has the advantages of low manufacturing cost, low design difficulty, high circuit integration, small circuit layout size, short development cycle and high debuggability.

[0049] Optionally, in an embodiment of the present application, the low-noise amplifier circuit 12 may include an amplifier driving circuit 122 and a first output matching circuit 123 in addition to the low-noise amplifier 121, and the power amplifier circuit 13 may include an input matching circuit 131, a power amplifier 132 and a second output matching circuit 133.

[0050] The amplifier driving circuit 122 is electrically connected to a power supply terminal of the low noise amplifier 121 so as to drive the low noise amplifier 121 to operate by providing electrical energy to the low noise amplifier 121 .

[0051] The input end of the low noise amplifier 121 is used to receive a radio frequency signal, and the output end of the low noise amplifier 121 is electrically connected to the input end of the first output matching circuit 123, and the radio frequency signal processed by the low noise amplifier 121 is transmitted to the outside through the output end of the first output matching circuit 123. In an implementation of this embodiment, the low noise amplifier 121 is implemented using a gallium arsenide transistor.

[0052] The input end of the input matching circuit 131 is electrically connected to the output end of the first output matching circuit 123, and is used to receive the RF signal processed by the low-noise amplifier circuit 12; the input end of the power amplifier 132 is electrically connected to the output end of the input matching circuit 131, and the output end of the power amplifier 132 is electrically connected to the input end of the second output matching circuit 133, and the RF signal processed by the power amplifier 132 is output to the outside through the output end of the second output matching circuit 133. In one implementation of this embodiment, the power amplifier 132 is implemented by a gallium nitride transistor.

[0053] Optionally, in one implementation of this embodiment, in order to ensure that the input matching circuit 131 can provide an impedance matching effect that is simultaneously adapted to the low-noise amplifier 121 and the power amplifier 132, the input matching circuit 131 can be formed by interconnecting a conventional impedance matching network and a silicon-based RF passive matching network; wherein the conventional impedance matching network can be, but is not limited to, a transformer matching network, a capacitor-inductor matching network, etc.; the silicon-based RF passive matching network can be implemented based on a silicon-based RF chip.

[0054] Optionally, in the embodiment of the present application, the plurality of terminals disposed on the terminal carrying surface of the package carrier 11 may include an input terminal 16 , a ground terminal 17 and an output terminal 18 .

[0055] The input terminal 16 can be electrically connected to the input end of the low noise amplifier 121 through a metal via penetrating the package carrier 11 , so that the hybrid integrated amplifier module 10 can externally receive and process RF signals through the input terminal 16 .

[0056] The ground terminal 17 is electrically connected to the metal shielding cover 14 through a metal via, and is used to set the metal shielding cover 14 to a ground potential, so as to ensure that the metal shielding cover 14 can perform efficient electromagnetic shielding on the covered circuit components included in the low-noise amplifier circuit 12 .

[0057] The output terminal 18 is electrically connected to the output end of the second output matching circuit 133 through a metal via, so that the hybrid integrated amplifier module 10 outputs a target RF signal through the output terminal 18, wherein the target RF signal is obtained by collaboratively processing the RF signal to be processed by the low-noise amplifier circuit 12 and the power amplifier circuit 13.

[0058] It can be understood that in order to effectively improve the device heat dissipation efficiency of the hybrid integrated amplifier module 10, the projection areas of the low-noise amplifier 121 and the power amplifier 132 included in the hybrid integrated amplifier module 10 on the device mounting surface are respectively located near the surface center position of the device mounting surface, and the projection areas of the low-noise amplifier 121 and the power amplifier 132 on the device mounting surface are respectively spaced apart from each other.

[0059] Optionally, see Figure 3 , Figure 3 1 is a schematic diagram of the composition of the second hybrid integrated amplifier module 10 provided in the embodiment of the present application. Figure 1 Compared with the first hybrid integrated amplifier module 10 shown, Figure 3The second hybrid integrated amplifier module 10 shown may further include an impedance migration attenuation layer 19 .

[0060] Among them, the impedance migration attenuation layer 19 is formed on the device mounting surface of the packaging carrier 11 and is located between the plastic packaging layer 15 and the device mounting surface, and is used to encapsulate the second output matching circuit 133 included in the power amplifier circuit 13, so as to weaken the impedance migration effect of the second output matching circuit 133 through the impedance migration attenuation layer 19, thereby effectively improving the output power and signal amplification efficiency of the hybrid integrated amplifier module 10. Among them, the impedance migration attenuation layer 19 is realized by low dielectric constant molding material (for example, SiLK material, porous SiLK material, low dielectric constant material based on silicon-based polymer (including HSQ (Hydrogen Silses Quioxane) material, MSQ (MethylSilses Quioxane) material, porous MSQ material), low dielectric constant material based on aerogel (including Nanoglass material), low dielectric constant material based on organic matter and silicon oxide (HOSP material), low dielectric constant material based on chemical vapor deposition carbon-doped silicon oxide (including Black Diamond material, Coral material and Aurora material)); the closer the actual dielectric constant of the impedance migration attenuation layer 19 is to 1, the stronger the impedance migration effect weakening strength of the impedance migration attenuation layer 19.

[0061] Optionally, in one implementation of this embodiment, the impedance migration attenuation layer 19 is implemented by a low-loss, low-dielectric constant molding compound, so that on the basis of effectively weakening the impedance migration effect of the second output matching circuit 133 by the low-loss, low-dielectric constant molding compound, the overall loss of the hybrid integrated amplifier module 10 is maintained at a desired loss level, and excessive differential loss is avoided as much as possible. The low-loss, low-dielectric constant molding compound can be implemented based on epoxy resin, such as a molding compound formed by a combination of epoxy resin, phenolic resin, inorganic filler, silane coupling agent, release agent, curing accelerator, flame retardant and gas phase silicon.

[0062] Optionally, see Figure 4 , Figure 4 is a schematic diagram of the composition of the third hybrid integrated amplifier module 10 provided in the embodiment of the present application. In the embodiment of the present application, Figure 4 The third hybrid integrated amplifier module 10 shown is Figure 1The difference between the first hybrid integrated amplifier module 10 shown in the figure is that the metal shielding cover 14 is a semi-enclosed cover, and the metal shielding cover 14 covers both the amplifier driving circuit 122 and the low-noise amplifier 121 included in the low-noise amplifier circuit 12. The projection areas of the metal shielding cover 14 and the input terminal 16 on the device mounting surface do not intersect with each other, so that the module stability of the hybrid integrated amplifier module 10 is further improved by the metal shielding cover 14 that simultaneously covers the amplifier driving circuit 122 and the low-noise amplifier 121, and at the same time ensures that the RF signal received by the input terminal 16 can flow to the low-noise amplifier 121 through the notch of the metal shielding cover 14.

[0063] Optionally, see Figure 5 , Figure 5 is a schematic diagram of the composition of the fourth hybrid integrated amplifier module 10 provided in the embodiment of the present application. Figure 4 Compared with the third hybrid integrated amplifier module 10 shown, Figure 5 The fourth hybrid integrated amplifier module 10 shown may further include an impedance migration attenuation layer 19 .

[0064] The impedance migration attenuation layer 19 is formed on the device mounting surface of the package carrier 11 and is located between the plastic packaging layer 15 and the device mounting surface, and is used to encapsulate the second output matching circuit 133 included in the power amplifier circuit 13, so as to weaken the impedance migration effect of the second output matching circuit 133 through the impedance migration attenuation layer 19, thereby effectively improving the output power and signal amplification efficiency of the hybrid integrated amplifier module 10. The impedance migration attenuation layer 19 is implemented by any one of the low dielectric constant plastic packaging materials loaded above; the closer the actual dielectric constant of the impedance migration attenuation layer 19 is to 1, the stronger the impedance migration effect weakening strength of the impedance migration attenuation layer 19 is.

[0065] Optionally, in an implementation of this embodiment, the impedance migration attenuation layer 19 is implemented by a low-loss, low-dielectric constant molding compound, so that the overall loss of the hybrid integrated amplifier module 10 is maintained at a desired loss level on the basis of effectively weakening the impedance migration effect of the second output matching circuit 133 by the low-loss, low-dielectric constant molding compound, and avoiding the introduction of excessive differential loss as much as possible. The low-loss, low-dielectric constant molding compound can be implemented based on epoxy resin.

[0066] In the present application, an embodiment of the present application also provides a radio frequency device, which includes at least one hybrid integrated amplifier module 10, and the amplifier module type of each of the at least one hybrid integrated amplifier module 10 is any one of the above-mentioned four hybrid integrated amplifier modules 10. The radio frequency device drives each of the hybrid integrated amplifier modules 10 to perform multi-stage amplification processing on the radio frequency signal received by itself.

[0067] The above are only various implementations of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art who is familiar with the present technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A hybrid integrated amplifier module, characterized in that: The amplifier module includes a packaging carrier, a low-noise amplifier circuit, a power amplifier circuit and a metal shielding cover; The low-noise amplifier circuit and the power amplifier circuit are connected to each other and are disposed on the device mounting surface of the packaging carrier, wherein the power amplifier circuit is used to amplify the radio frequency signal processed by the low-noise amplifier circuit; The metal shielding cover is arranged on the device mounting surface of the packaging carrier and at least covers the low noise amplifier included in the low noise amplifier circuit, wherein the metal shielding cover is grounded via the packaging carrier; A plastic encapsulation layer is formed on the device mounting surface of the packaging carrier, wherein the plastic encapsulation layer is used to cover the device mounting surface, the low-noise amplifier circuit, the power amplifier circuit and the metal shielding cover.

2. The amplifier module according to claim 1, characterized in that The low-noise amplifier circuit also includes an amplifier driving circuit and a first output matching circuit, and the power amplifier circuit includes an input matching circuit, a power amplifier, and a second output matching circuit; The amplifier driving circuit is electrically connected to the power supply terminal of the low noise amplifier, wherein the amplifier driving circuit is used to drive the low noise amplifier to operate; The input end of the low noise amplifier is used to receive a radio frequency signal, the output end of the low noise amplifier is electrically connected to the input end of the first output matching circuit, and the radio frequency signal processed by the low noise amplifier is transmitted to the outside through the output end of the first output matching circuit; The input end of the input matching circuit is electrically connected to the output end of the first output matching circuit, the input end of the power amplifier is electrically connected to the output end of the input matching circuit, the output end of the power amplifier is electrically connected to the input end of the second output matching circuit, and the power amplifier outputs the RF signal processed by the power amplifier through the output end of the second output matching circuit.

3. The amplifier module according to claim 2, characterized in that: An input terminal, a ground terminal and an output terminal are arranged on a terminal bearing surface of the packaging carrier away from the device mounting surface; The input terminal is electrically connected to the input end of the low noise amplifier through a metal via penetrating the package carrier, wherein the input terminal is used to receive a radio frequency signal to be processed; The ground terminal is electrically connected to the metal shielding cover through a metal via, and is used to set the metal shielding cover to a ground potential; The output terminal is electrically connected to the output end of the second output matching circuit through a metal via, wherein the output terminal is used to output a target radio frequency signal obtained by processing the radio frequency signal to be processed through the low-noise amplifier circuit and the power amplifier circuit.

4. The amplifier module according to claim 3, characterized in that: The metal shielding cover is a semi-enclosed cover, and the metal shielding cover covers the amplifier driving circuit and the low-noise amplifier at the same time, wherein the projection areas of the metal shielding cover and the input terminal on the device mounting surface do not intersect each other.

5. The amplifier module according to claim 2, characterized in that: The low noise amplifier is implemented by a gallium arsenide transistor, and the power amplifier is implemented by a gallium nitride transistor.

6. The amplifier module according to claim 2, characterized in that: The projection areas of the low noise amplifier and the power amplifier on the device mounting surface are respectively distributed at intervals close to the center position of the surface of the device mounting surface.

7. The amplifier module according to claim 1, characterized in that: The material of the metal shielding cover includes any one of silver, copper, tin, aluminum and nickel, and the material of the plastic sealing layer is epoxy resin.

8. The amplifier module according to any one of claims 1 to 7, characterized in that: An impedance migration attenuation layer is formed on the device mounting surface of the packaging carrier; The impedance migration attenuation layer is arranged between the plastic packaging layer and the device mounting surface, and covers and packages the second output matching circuit included in the power amplifier circuit, wherein the impedance migration attenuation layer is used to weaken the impedance migration effect of the second output matching circuit.

9. The amplifier module according to claim 8, characterized in that: The impedance migration attenuation layer is realized by using a low-loss and low-dielectric constant plastic packaging material.

10. A radio frequency device, characterized in that: The radio frequency device comprises at least one hybrid integrated amplifier module as claimed in any one of claims 1 to 9.

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