A processing device
By designing a processing equipment with a double-layer structure of inner and outer cavity, the heat exchange chamber technology of the mezzanine space is used to solve the problem of easy damage to the quartz tube cavity at high temperatures, extending the service life and improving heating efficiency.
Patent Information
- Application Number
- CN202420515036.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-03-15
- Publication Date
- 2025-04-04
- Estimated Expiration
- 2034-03-15
AI Technical Summary
In the prior art, the quartz tube cavity of the diffusion furnace equipment is prone to creep deformation at high temperatures, resulting in a risk of rupture and damage, and has a high replacement cost.
A processing device is designed, whose cavity is composed of inner cavity and outer cavity nested with each other, forming a mezzanine space as a heat exchange chamber, through the inlet pipe assembly and the outlet pipe assembly, gases of different temperatures are passed to exchange, cool or preheat the cavity.
Through gas heat exchange technology, the service life of quartz products is extended, creep deformation is avoided, the heating speed of the working chamber is increased, and replacement costs are reduced.
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Figure CN222715444U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of mechanical equipment, and in particular to a processing equipment. Background Art
[0002] The processing equipment used in process production will heat the processing object in the cavity during operation, and its own cavity wall will also be affected by the temperature increase, causing problems such as thermal deformation.
[0003] Take the diffusion process in the preparation of solar cells as an example, that is, the silicon wafer is placed in a diffusion furnace with a quartz boat as a carrier, and nitrogen and diffusion sources are introduced into the diffusion furnace at a certain temperature to diffuse and deposit PN junctions on the surface of the silicon wafer. When the diffusion furnace equipment in the prior art performs a high-temperature diffusion process, the temperature inside the quartz tube cavity will reach above 1000°C, close to the strain point of the quartz material (1110°C). The quartz tube cavity of the diffusion furnace will accelerate creep deformation due to high temperature, resulting in the risk of rupture and damage. Damage to the quartz tube cavity will result in huge losses, and replacing the quartz tube cavity will consume time, energy and cost. Utility Model Content
[0004] In view of this, the present application provides a processing device to solve the problem of high-temperature deformation and damage of the cavity in the prior art.
[0005] In order to solve the above technical problems, a technical solution adopted by the present application is: to provide a processing device, the processing device includes a cavity, an air inlet pipe assembly and an air outlet pipe assembly. The cavity includes an inner cavity and an outer cavity which are nested with each other, the inner cavity forms a working cavity, and a sandwich space is formed between the inner cavity and the outer cavity, and the sandwich space forms a heat exchange cavity; the air inlet pipe assembly is arranged in the cavity, the air inlet pipe assembly is connected to the heat exchange cavity, and is used to pass the gas at a first temperature into the heat exchange cavity; the air outlet pipe assembly is arranged in the cavity, the air outlet pipe assembly is connected to the heat exchange cavity, and the gas at a second temperature obtained after heat exchange is discharged from the heat exchange cavity through the air outlet pipe assembly.
[0006] According to an embodiment of the present application, the air intake pipe assembly includes at least one air intake pipe. When the air intake pipe assembly includes at least two air intake pipes, the at least two air intake pipes are evenly distributed around the central axis of the cavity.
[0007] According to one embodiment of the present application, the processing equipment includes a flange, which is arranged at one end of the cavity and fixedly connects the ends of the inner cavity and the outer cavity; the air inlet pipe passes into the heat exchange cavity through the flange.
[0008] According to an embodiment of the present application, the cavity is made of transparent quartz material.
[0009] According to one embodiment of the present application, the processing equipment includes a heating furnace, which is arranged outside the cavity and is used to heat the working cavity by thermal radiation.
[0010] According to one embodiment of the present application, the inner cavity and the outer cavity are of integrated design.
[0011] According to one embodiment of the present application, the processing device further includes:
[0012] The branch pipe connects the working chamber with the outside of the chamber and is used to pass process gas into or out of the working chamber or to install a temperature sensor.
[0013] According to one embodiment of the present application, the branch pipe includes:
[0014] An inner branch pipe, an outer branch pipe and a sealing member, wherein the inner branch pipe is arranged in the inner cavity and communicates with the working cavity, the outer branch pipe is arranged in the outer cavity and sleeved outside the inner branch pipe, and the sealing member forms a seal between the inner branch pipe and the outer branch pipe.
[0015] According to one embodiment of the present application, the seal includes a first connection part, a hose and a second connection part connected in sequence, the first connection part is sealed connected to the inner branch pipe, and the second connection part is sealed connected to the outer branch pipe; the hose is connected between the first connection part and the second connection part.
[0016] According to one embodiment of the present application, the branch pipe is a single pipe body, and the branch pipe is connected to the inner cavity after passing through the outer cavity, and the branch pipe is fixedly connected to the outer cavity and the inner cavity.
[0017] According to one embodiment of the present application, the processing equipment further includes: a support member, the support member is arranged in the heat exchange chamber, the support member is arranged in contact between the inner cavity and the outer cavity, and is used to fix the relative position between the inner cavity and the outer cavity.
[0018] According to one embodiment of the present application, the support member is arc-shaped and is disposed on a side of the heat exchange chamber close to the ground.
[0019] According to one embodiment of the present application, the support member is spirally shaped to form a spiral channel connecting the air inlet pipe assembly and the air outlet pipe assembly.
[0020] According to one embodiment of the present application, the support member includes a plurality of annular members arranged at intervals, and ventilation grooves are opened at the edges of the annular members and / or air holes are opened inside to connect the heat exchange cavity spaces on both sides of the annular members.
[0021] According to one embodiment of the present application, the support member is fixedly connected to both the inner cavity and the outer cavity.
[0022] The beneficial effect of the present application is: to provide a processing device, wherein an interlayer space is formed between the inner cavity and the outer cavity which are nested with each other, and the interlayer space forms a heat exchange cavity, and gases of different temperatures can be introduced into the heat exchange cavity to exchange heat between the inner cavity and the outer cavity. By introducing flowing cooling gas into the heat exchange cavity, the cavity wall can be cooled, and the service life of the quartz product, i.e., the cavity, can be extended. In the heating stage of the inner cavity, flowing high-temperature gas is introduced into the heat exchange cavity, and the temperature of the high-temperature gas is lower than the highest process temperature and lower than the strain point temperature of the cavity wall material, so as to heat the inner cavity and the outer cavity at the same time, and cooperate with the heating component of the cavity while maintaining the consistency of the cavity temperature, which is conducive to increasing the heating speed of the working cavity. BRIEF DESCRIPTION OF THE DRAWINGS
[0023] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. Among them:
[0024] Figure 1 It is a structural schematic diagram of an embodiment of a processing device of the present application;
[0025] Figure 2 It is a structural schematic diagram of an embodiment of a processing device of the present application;
[0026] Figure 3 It is a structural schematic diagram of an embodiment of a processing device of the present application;
[0027] Figure 4 It is a partial structural schematic diagram of an embodiment of a processing device of the present application;
[0028] Figure 5 It is a partial structural schematic diagram of an embodiment of a processing device of the present application;
[0029] Figure 6 It is a structural schematic diagram of an embodiment of a processing device of the present application;
[0030] Figure 7 It is a partial structural diagram of an embodiment of a processing device of the present application. DETAILED DESCRIPTION
[0031] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. It is to be understood that the specific embodiments described herein are only used to explain the present application, rather than to limit the present application. It should also be noted that, for ease of description, only some structures related to the present application are shown in the accompanying drawings, rather than all structures. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.
[0032] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.
[0033] The present application provides a processing device 10, referring to Figure 1 and Figure 2 The processing device 10 includes a cavity 11, an air inlet pipe assembly 12 and an air outlet pipe assembly 13. The cavity 11 includes an inner cavity 111 and an outer cavity 112 which are nested with each other, a working cavity 1111 is formed inside the inner cavity 111, and a sandwich space is formed between the inner cavity 111 and the outer cavity 112, and a heat exchange cavity 113 is formed in the sandwich space; the air inlet pipe assembly 12 is arranged in the cavity 11, and the air inlet pipe assembly 12 is connected to the heat exchange cavity 113, and is used to pass the gas at a first temperature into the heat exchange cavity 113; the air outlet pipe assembly 13 is arranged in the cavity 11, and the air outlet pipe assembly 13 is connected to the heat exchange cavity 113, and is used to discharge the gas at a second temperature obtained after heat exchange from the heat exchange cavity 113 through the air outlet pipe assembly 13.
[0034] Specifically, the cavity 11 of the processing equipment 10 is a double-layer structure of an inner cavity 111 and an outer cavity 112, and gases of different temperatures can be introduced into the heat exchange cavity 113 to exchange heat with the inner cavity 111 and the outer cavity 112. If the first temperature is greater than the second temperature, high-temperature gas is introduced, and the inner cavity 111 and the outer cavity 112 can be heated to achieve the purpose of preheating the cavity 11 or cooperating with other heating devices such as heating wires and heating rods to increase the heating rate. If the first temperature is lower than the second temperature, cooling gas is introduced, and the inner cavity 111 and the outer cavity 112 can be cooled to achieve the purpose of cooling the cavity 11. By adjusting the flow rate of the introduced gas and the initial temperature and other conditions, the inner cavity 111 and the outer cavity 112 are cooled or heated, and the temperature control efficiency of the working cavity 1111 is improved.
[0035] In other embodiments, the air inlet pipe assembly 12 and the air outlet pipe assembly 13 are respectively arranged at the first end a and the second end b of the cavity 11, the first end a and the second end b are arranged opposite to each other, and the air inlet pipe assembly 12 and the air outlet pipe assembly 13 are connected to the heat exchange cavity 113. The gas flows from the head to the tail of the processing device 10 in the interlayer space and then is discharged. By extending the distance of the gas flow, heat exchange can be fully achieved.
[0036] The processing equipment 10 further includes a heating furnace 14 , which is sleeved outside the cavity 11 and is used for performing thermal radiation heating on the working cavity 1111 .
[0037] In this embodiment, the processing device 10 is a diffusion furnace device, and the cavity 11 is made of transparent quartz material.
[0038] Specifically, when the high-temperature diffusion process is performed, the heating furnace 14 heats the working chamber 1111, and the heating method is mainly in the form of thermal radiation. Since the cavity 11 is a transparent material, the flowing gas in the heat exchange chamber 113 formed by the interlayer space is also a transparent material, which has little effect on the thermal radiation blocking effect. Therefore, the temperature of the cavity 11 itself has little effect on the thermal radiation heating of the silicon wafer carrier and the silicon wafer in the working chamber 1111 by the heating furnace 14. When the heating furnace 14 performs thermal radiation heating on the silicon wafer carrier and the silicon wafer in the working chamber 1111 through the transparent quartz cavity 11, the temperature of the silicon wafer carrier and the silicon wafer reaches the highest process temperature. Usually, the highest process temperature in the working chamber 1111 is above 1000°C (generally the highest process temperature is 1050°C), which is close to the strain point of the quartz material 1110°C. When the heating furnace 14 heats the temperature in the working chamber 1111 to the highest process temperature, the temperature of the heating furnace 14 itself is often higher than the highest process temperature. The cavity 11 made of quartz will accelerate creep deformation due to high temperature, resulting in the risk of rupture and damage. Damage to the cavity 11 will cause huge losses, and replacing the cavity 11 consumes time, energy and cost. Therefore, the cavity 11 of the embodiment of the present application is set as a double-layer structure of an inner cavity 111 and an outer cavity 112, and a flowing cooling gas is introduced into the heat exchange cavity 113 formed by the interlayer space to cool the inner cavity 111 and the outer cavity 112, that is, to achieve the cooling of the cavity 11. After the cavity 11 is cooled, the temperature of the cavity 11 is lower than the maximum process temperature (for example, 1050°C). Increasing the flow rate of the cooling gas introduced into the heat exchange cavity 113 and lowering the initial temperature of the cooling gas can further reduce the temperature of the cavity 11. The temperature of the quartz material is lower than 1000°C, which will greatly extend the service life of the quartz product, i.e., the cavity 11.
[0039] In addition, since the heat radiation efficiency received by the transparent quartz material is relatively low, the temperature rise rate of the cavity 11 is slower than the temperature rise rate of the silicon wafer carrier and the silicon wafer.
[0040] In other embodiments, when the heating furnace 14 performs thermal radiation heating on the silicon wafer carrier and silicon wafer in the working chamber 1111 through the transparent chamber 11, before the temperature of the silicon wafer carrier and silicon wafer reaches the highest process temperature (e.g., 1050°C), a flowing high-temperature gas is introduced into the heat exchange chamber 113 formed by the interlayer space, and the temperature of the high-temperature gas is lower than the highest process temperature and lower than the strain point temperature of the quartz material, so as to heat the inner chamber 111 and the outer chamber 112 respectively, and preheat the chamber 11 while maintaining the safety of the chamber 11. After the chamber 11 is preheated, the heating speed in the working chamber 1111 is increased, which is conducive to improving the heating efficiency of the heating furnace 14 on the silicon wafer carrier and silicon wafer in the working chamber 1111. Increasing the flow rate of the high-temperature gas introduced into the heat exchange chamber 113 and increasing the initial temperature of the high-temperature gas within a safe range can further increase the temperature of the chamber 11. When the temperature of the silicon wafer carrier and the silicon wafer is about to reach but has not yet reached the maximum process temperature, the temperature of the high-temperature gas for preheating is reduced, and instead, flowing cooling gas is introduced into the heat exchange chamber 113 to cool the inner cavity 111 and the outer cavity 112 respectively, thereby cooling the cavity 11. That is, when the heat source temperature of the heating furnace 14 is close to 1000°C, low-temperature gas is introduced. On the one hand, the temperature in the working chamber 1111 continues to rise under thermal radiation, and on the other hand, the cavity 11 is cooled by the low-temperature gas to prevent the quartz material from approaching the strain point temperature and to prevent the cavity 11 from creeping and deforming. Similarly, when the cavity 11 needs to be cooled after the process is completed, low-temperature gas can continue to be introduced so that the cavity itself can be cooled faster. In addition, high-temperature gas can continue to be introduced so that the cavity itself reaches a cooling speed slower than air cooling to adapt to various process requirements.
[0041] The gas introduced into the heat exchange chamber 113 may be nitrogen or CDA (clean dry air).
[0042] According to an embodiment of the present application, the air intake pipe assembly 12 includes at least one air intake pipe 121. When the air intake pipe assembly 12 includes at least two air intake pipes 121, the at least two air intake pipes 121 are evenly distributed around the central axis of the cavity 11. Specifically, the at least two air intake pipes 121 are evenly distributed around the central axis of the cavity 11, so that the gas introduced can be quickly and evenly diffused into the cavity 11, thereby improving the efficiency of heating or cooling. The air intake pipe 121 can be directly sealed and welded on the outer cavity 112, or it can be connected to the inner cavity through a sealing connection flange and other parts.
[0043] According to an embodiment of the present application, the processing device 10 includes a flange 15, which is arranged at one end of the cavity 11, fixedly connecting the ends of the inner cavity 111 and the outer cavity 112, and the air inlet pipe 121 passes through the flange 15 into the heat exchange cavity 113. Specifically, in this embodiment, the inner cavity 111 and the outer cavity 112 are of an integrated design, and the flange 15 is arranged at the furnace mouth of the cavity 11, connecting the ends of the inner cavity 111 and the outer cavity 112, and the connection method can be welding or detachable connection. The air inlet pipe 121 passes through the flange 15 into the heat exchange cavity 113, so that the gas enters the heat exchange cavity 113 through the air inlet pipe 121. After the gas at the first temperature enters the heat exchange cavity 113 from the air inlet pipe assembly 12 for heat exchange, the gas at the second temperature after heat exchange is discharged through the air outlet pipe assembly 13. By adjusting the flow rate of the gas introduced and the initial temperature and other conditions, the inner cavity 111 and the outer cavity 112 are cooled or heated.
[0044] The processing equipment 10 further includes a furnace door (not marked in the figure), which is moved from the side of the processing equipment 10 and is tightly and sealedly connected to the flange 15.
[0045] In other embodiments, the air intake pipe assembly 12 includes at least two air intake pipes 121, and at least two air intake pipes 121 are arranged on the same side of the cavity 11. Figure 1 This setting is beneficial to pipeline layout.
[0046] According to one embodiment of the present application, the air outlet pipe assembly 13 includes an air outlet pipe 131 and a vacuum pump (not marked in the figure). The air outlet pipe 131 is arranged in the outer cavity 111 and connected to the heat exchange cavity 113; the air outlet pipe 131 can be specifically welded to the outer cavity 111 in a sealed manner; the vacuum pump is connected to the air outlet pipe 131 and is used to extract the gas in the heat exchange cavity 113. Specifically, the air outlet pipe 131 is located at one end of the cavity 11, is arranged in the outer cavity 111 and connected to the heat exchange cavity 113, and the vacuum pump is connected to the air outlet pipe 131 to extract the gas in the heat exchange cavity 113. After the gas at the first temperature enters the heat exchange cavity 113 from the air inlet pipe assembly 12 for heat exchange, the air outlet pipe assembly 13 extracts the gas at the second temperature after heat exchange. The gas flows in the interlayer space and is then extracted to achieve cooling or preheating of the inner cavity 111 and the outer cavity 112.
[0047] It should be noted that the number of the air outlet pipes 131 may be one or more.
[0048] According to an embodiment of the present application, the processing device 10 further includes a branch pipe 16. The branch pipe 16 connects the working chamber 1111 with the outside of the chamber body 11, and is used to pass process gas into or out of the working chamber 1111. The process gas can be nitrogen, oxygen, boron tetrachloride, etc.
[0049] According to one embodiment of the present application, referring to Figure 2 and Figure 4 The branch pipe 16 includes an inner branch pipe 161, an outer branch pipe 162 and a sealing member 163. The inner branch pipe 161 is arranged in the inner cavity 111 and connected to the working cavity 1111 for passing process gas in or out. The outer branch pipe 162 is arranged in the outer cavity 112 and is sleeved outside the inner branch pipe 161. The sealing member 163 forms a seal between the inner branch pipe 161 and the outer branch pipe 162.
[0050] Specifically, the branch pipe 16 is used to pass process gas in or out. The inner branch pipe 161 is sealed and welded on the inner cavity 111 and communicates with the working chamber 1111, and is used to pass process gas in or out. The outer branch pipe 162 is sealed and welded on the outer cavity 112 and is sleeved outside the inner branch pipe 161. When the inner cavity 111 and the outer cavity 112 are assembled, the inner branch pipe 161 and the outer branch pipe 162 are also sleeved inside and outside to achieve assembly, and a seal 163 is used to form a seal between the inner branch pipe 161 and the outer branch pipe 162.
[0051] According to one embodiment of the present application, referring to Figure 5 The sealing member 163 includes a first connection portion 1631, a hose 1632 and a second connection portion 1633 which are connected in sequence. The first connection portion 1631 is sealedly connected to the inner branch pipe 161, and the second connection portion 1633 is sealedly connected to the outer branch pipe 162; the hose 1632 is connected to the first connection portion 1631 and the second connection portion 1633 to seal the space between the inner branch pipe 161 and the outer branch pipe 162.
[0052] Specifically, the seal 163 plays a sealing role when the inner branch pipe 161 and the outer branch pipe 162 form an inner-outer-outer arrangement. As an embodiment, the outer surface of the inner branch pipe 161 is provided with a first mounting groove 1611, and the portion of the first mounting groove 1611 protruding from the surface of the inner branch pipe 161 can be welded to the inner branch pipe 161. The outer surface of the outer branch pipe 162 is provided with a second mounting groove 1621, and the portion of the second mounting groove 1621 protruding from the surface of the outer branch pipe 162 can be welded to the outer branch pipe 162. The first mounting groove 1611 and the second mounting groove 1621 are provided with internal threads, and the first connecting portion 1631 is provided with external threads, which are screwed into the first mounting groove 1611 by threaded matching, and the second connecting portion 1633 is also provided with external threads, which are screwed into the second mounting groove 1621 by threaded matching. As another embodiment, the first connection portion 1631 may be directly embedded in the first installation groove 1611 without threads, and then the first connection portion 1631 is connected and fixed by a screw that passes through the side wall of the first installation groove 1611. The second connection portion 1633 may also be directly embedded in the second installation groove 1621 without threads, and then the second connection portion 1633 is connected and fixed by a screw that passes through the side wall of the second installation groove 1621. Sealing rings are also provided in the first installation groove 1611 and the second installation groove 1621, respectively. When the first connection portion 1631 is installed in the first installation groove 1611, the sealing ring is squeezed to achieve a sealing effect. When the second connection portion 1633 is installed in the second installation groove 1621, the sealing ring is squeezed to achieve a sealing effect.
[0053] The hose 1632 can be used to accommodate the situation where the inner cavity 111 and the outer cavity 112 are not completely aligned during assembly, so as to allow a certain error in the assembly of the inner branch pipe 161 and the outer branch pipe 162 .
[0054] According to one embodiment of the present application, referring to Figure 6 and Figure 7 The branch pipe 16 is a single pipe body, and the branch pipe 16 passes through the outer cavity 112 and is connected to the inner cavity 111. The branch pipe 16 is fixedly connected to the outer cavity 112 and the inner cavity 111, and the connection is kept sealed. The specific connection method can be welding.
[0055] Specifically, the branch pipe 16 of this embodiment is a single pipe body, which is directly connected to the working chamber 1111 and is used to pass process gas in or out. This arrangement does not need to consider the inner and outer outer arrangement assembly issues when assembling the inner chamber 111 and the outer chamber 112, and has good sealing performance.
[0056] The processing device 10 further includes a temperature sensor (not labeled in the figure), which extends into the inner cavity 111 and is used to sense the temperature in the inner cavity 111. The branch pipe can also be used to insert the temperature sensor. The temperature sensor is usually a thermocouple, which is a multi-point temperature measurement, and performs temperature detection on each area in the working cavity 1111.
[0057] According to one embodiment of the present application, referring to Figure 3 The processing equipment 10 also includes: a support member 17, which is arranged in the heat exchange chamber 113, and the support member 17 is arranged in contact between the inner cavity 111 and the outer cavity 112, and is used to fix the relative position between the inner cavity 111 and the outer cavity 112 to maintain the stability of the heat exchange chamber 113 space.
[0058] According to an embodiment of the present application, the support member 17 is fixedly connected to both the inner cavity 111 and the outer cavity 112. The support member 17 and the inner cavity 111 and the outer cavity 112 can be fixedly connected by welding, or the support member 17 can be clamped and attached between the inner cavity 111 and the outer cavity 112.
[0059] According to one embodiment of the present application, the support member 17 is arc-shaped and is disposed on the side of the heat exchange cavity 113 close to the ground. The arc-shaped support member 17 is disposed on the side close to the ground, which plays a supporting role while reducing costs; in other embodiments, the support member 17 can also be disposed in a circle along the interlayer space to achieve the effect of strengthening the connection structure.
[0060] According to one embodiment of the present application, the support member 17 is spirally arranged in the heat exchange cavity 113 to form a spiral channel connecting the air inlet pipe assembly 12 and the air outlet pipe assembly 13. The spiral support member 17 is arranged in the heat exchange cavity 113, and the gas entering from the air inlet pipe assembly 12 diffuses in a spiral along the support member 17, surrounding the cavity 11 until the air outlet pipe assembly 13, thereby the heat exchange effect of the gas on the cavity 11 is more sufficient and more uniform. The spirally arranged support member 17 can not only play the role of supporting the inner and outer cavities, but also help to improve the uniformity of gas heat exchange, extend the flow path of the airflow in the heat exchange cavity 113, and enhance the heat exchange effect.
[0061] Alternatively, in this embodiment, the support member 17 includes a plurality of annular members (not marked in the figure) arranged at intervals in the heat exchange cavity 113, and the plurality of annular members are arranged between the air inlet pipe assembly 12 and the air outlet pipe assembly 13, and are distributed along the length direction of the cavity 11. Ventilation grooves are provided at the edges of the annular members and / or air holes are provided inside to connect the heat exchange cavity 113 spaces on both sides of the annular members. The annular members can decelerate the airflow and make the airflow evenly diffuse on the surface of the annular members. After sufficient heat exchange, the gas is discharged from the air outlet pipe assembly 13, thereby improving the heat exchange efficiency.
[0062] In summary, the present application provides a processing device 10, wherein an inner cavity 111 and an outer cavity 112 are nested with each other to form an interlayer space, and the interlayer space forms a heat exchange cavity 113, and gases of different temperatures can be introduced into the heat exchange cavity 113 to exchange heat between the inner cavity 111 and the outer cavity 112. By introducing flowing cooling gas into the heat exchange cavity 113, the cavity 11 can be cooled, and the service life of the quartz product, i.e., the cavity 11, can be extended. Before the temperature of the silicon wafer carrier and the silicon wafer reaches the highest process temperature, flowing high-temperature gas is introduced into the heat exchange cavity 113, and the temperature of the high-temperature gas is lower than the highest process temperature and lower than the strain point temperature of the quartz material, so as to heat the inner cavity 111 and the outer cavity 112 respectively, and the cavity 11 is preheated while maintaining the safety of the cavity 11, which is conducive to improving the heating efficiency of the heating furnace 14 in the working cavity 1111.
[0063] The above are only implementation methods of the present application, and are not intended to limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.
Claims
1. A processing device, characterized in that: include: A cavity, the cavity comprising an inner cavity and an outer cavity which are nested with each other, the inner cavity forms a working cavity, and a sandwich space is formed between the inner cavity and the outer cavity, and the sandwich space forms a heat exchange cavity; An air inlet pipe assembly, disposed in the cavity, the air inlet pipe assembly being connected to the heat exchange cavity and used for passing gas at a first temperature into the heat exchange cavity; An air outlet pipe assembly is arranged in the cavity, the air outlet pipe assembly is connected to the heat exchange cavity, and the gas at the second temperature obtained after heat exchange is discharged from the heat exchange cavity through the air outlet pipe assembly.
2. The processing device according to claim 1, characterized in that The air intake pipe assembly includes at least one air intake pipe. When the air intake pipe assembly includes at least two air intake pipes, the at least two air intake pipes are evenly distributed around the central axis of the cavity.
3. The processing device according to claim 2, characterized in that The processing equipment comprises a flange, which is arranged at one end of the cavity and fixedly connects the ends of the inner cavity and the outer cavity; the air inlet pipe passes through the flange into the heat exchange cavity.
4. The processing device according to claim 1, characterized in that The cavity is made of transparent quartz material.
5. The processing device according to claim 1, characterized in that The processing equipment comprises a heating furnace, which is sleeved outside the cavity and is used for performing thermal radiation heating on the working cavity.
6. The processing device according to claim 1, characterized in that The inner cavity and the outer cavity are of integrated design.
7. The processing device according to claim 1, characterized in that The processing device also includes: A branch pipe connects the working chamber with the outside of the chamber and is used for passing process gas into or out of the working chamber, or installing a temperature sensor.
8. The processing device according to claim 7, characterized in that The branch pipe comprises: An inner branch pipe, an outer branch pipe and a sealing member, wherein the inner branch pipe is arranged in the inner cavity and communicates with the working cavity, the outer branch pipe is arranged in the outer cavity and sleeved outside the inner branch pipe, and the sealing member forms a seal between the inner branch pipe and the outer branch pipe.
9. The processing device according to claim 8, characterized in that The sealing member comprises a first connection part, a hose and a second connection part which are connected in sequence, the first connection part is sealingly connected to the inner branch pipe, and the second connection part is sealingly connected to the outer branch pipe; the hose is connected between the first connection part and the second connection part.
10. The processing device according to claim 7, characterized in that The branch pipe is a single pipe body, and the branch pipe is connected to the inner cavity after passing through the outer cavity, and the branch pipe is fixedly connected to the outer cavity and the inner cavity.
11. The processing device according to claim 1, characterized in that The processing equipment further includes: a support member, which is disposed in the heat exchange cavity, and is disposed in contact between the inner cavity and the outer cavity to fix the relative position between the inner cavity and the outer cavity.
12. The processing device according to claim 11, characterized in that The support member is in an arc shape and is arranged on a side of the heat exchange cavity close to the ground.
13. The processing device according to claim 11, characterized in that The support member is spiral-shaped to form a spiral channel connecting the air inlet pipe assembly and the air outlet pipe assembly.
14. The processing device according to claim 11, characterized in that The support member comprises a plurality of annular members arranged at intervals, and ventilation grooves are provided at the edges of the annular members and / or air holes are provided inside the annular members to connect the heat exchange cavity spaces on both sides of the annular members.
15. The processing device according to claim 11, characterized in that The support member is fixedly connected to both the inner cavity and the outer cavity.