Epitaxial Wafer Graphite Carrier

Abstract

The present application discloses an epitaxial wafer graphite carrier, comprising a carrier body, wherein the carrier body is provided with a through hole suitable for accommodating an epitaxial wafer and a heat spreader in the middle position in the vertical direction, and the carrier body is provided with multiple groups of support members for supporting the epitaxial wafer evenly arranged along the circumferential direction at the lower part of the through hole, wherein each group of the support members includes at least two support angles, wherein the heat spreader is located on the top of the epitaxial wafer to press the epitaxial wafer down and fix it on the support members. The epitaxial wafer graphite carrier provided by the present application can enhance the bearing capacity of the support members, reduce the probability of the graphite carrier being scrapped, and thus save resources and reduce costs.

Description

Technical Field

[0001] The utility model relates to the technical field of epitaxial wafer processing equipment, in particular to an epitaxial wafer graphite carrier. Background Art

[0002] The epitaxial wafer graphite carrier used in the existing POWDEC MOCVD production has three protruding support angles in the middle of the inner part, which are used to support the epitaxial wafer and the heat spreader. The heat spreader presses the epitaxial wafer down and fixes it on the support angles through its own weight and friction. There are the following defects:

[0003] 1. The three corners of the epitaxial wafer and the heat spreader are relatively fragile. When placing the wafer and the heat spreader, they are placed on the corners from top to bottom by the suction of the suction pen. At the same time, when taking the heat spreader, the temperature will be slightly higher, which is easy to affect the suction of the suction pen. If the operator does not control the force and speed well, the corners are prone to breaking. Once a corner is broken or damaged, the entire graphite carrier will be scrapped, which not only wastes resources, but also increases the burden of production costs;

[0004] 2. When placing the heat spreader manually, it may occasionally be dragged, causing the epitaxial wafer to move, making the gap between the flat edges smaller or even close. In addition, the running graphite carrier is in a rotating state. When it stops suddenly, the epitaxial wafer and the flat edge may be misaligned due to inertia, and cracks are likely to occur under the state of thermal expansion and contraction. Utility Model Content

[0005] The embodiment of the present application provides an epitaxial wafer graphite carrier, which can enhance the bearing capacity of the support member and reduce the probability of the graphite carrier being scrapped, thereby saving resources and reducing costs.

[0006] An embodiment of the present application provides an epitaxial wafer graphite carrier, including a carrier body, wherein the carrier body is provided with a through hole suitable for accommodating the epitaxial wafer and a heat spreader in the middle position in the vertical direction, and the carrier body is provided with a plurality of groups of support members for supporting the epitaxial wafer evenly arranged along the circumferential direction below the through hole, wherein each group of the support members includes at least two carrier angles, wherein the heat spreader is located on the top of the epitaxial wafer to press the epitaxial wafer down and fix it on the support members.

[0007] In a possible implementation, the support members are implemented into three groups or four groups, each group of the support members includes two or three support angles, and there is a gap between all the support angles in each group of the support members.

[0008] In one possible implementation, the carrier body is provided with an annular limiting groove on the periphery of the through hole for cooperating with the annular boss on the heat spreader, so that when the epitaxial wafer is pressed into place by the heat spreader, the annular boss is embedded in the annular limiting groove.

[0009] In a possible implementation, a plurality of tenons are arranged at intervals in the annular limiting groove, and the annular boss is provided with a slot matching with the tenons.

[0010] In a possible implementation, there are three tenons, and the angle between the three tenons is 120°.

[0011] In a possible implementation, the height of the tenon is 1 mm, and the width of the tenon is 2 mm.

[0012] Beneficial effects: Compared with the prior art, the epitaxial wafer graphite carrier provided by the present application is provided with multiple groups of support members, and each group of support members includes at least two support angles, which can effectively improve the bearing capacity of the support members on the epitaxial wafer and the heat sink. Even if one support angle is broken or damaged, the adjacent support angles can still support it, which is safer to use, reduces the probability of scrapping the entire graphite carrier, and can save resources and reduce costs.

[0013] The annular limiting groove is arranged on the top of the carrier body to cooperate with the annular boss on the heat soaking plate, so that the heat soaking plate can be provided with additional support. Even if the operator does not properly control the force and speed, the carrier angle is not easily damaged, and the use is safer.

[0014] The annular limiting groove is provided with tenons at intervals, which can cooperate with the slots on the annular boss to complete the positioning of the heat spreader, and can also play the role of limiting the heat spreader to prevent the movement of the epitaxial wafer due to human drag or inertia, and can maintain the gap between the flat edge of the graphite carrier and the flat edge of the epitaxial wafer, thereby reducing the probability of cracking.

[0015] These and other purposes, features and advantages of the present invention are fully reflected in the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 A schematic diagram of the three-dimensional structure of the epitaxial wafer graphite carrier of the present application is shown.

[0017] Figure 2 A schematic diagram of the top view of the epitaxial wafer graphite carrier of the present application is shown. DETAILED DESCRIPTION

[0018] The following description is used to disclose the utility model so that those skilled in the art can implement the utility model. The preferred embodiments described below are only examples, and those skilled in the art can think of other obvious variations. The basic principles of the utility model defined in the following description can be applied to other embodiments, variations, improvements, equivalents, and other technical solutions that do not deviate from the spirit and scope of the utility model.

[0019] Those skilled in the art should understand that, in the disclosure of the specification, the orientation or position relationship indicated by the terms "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc. are based on the orientation or position relationship shown in the drawings, which are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, the above terms should not be understood as limiting the present invention.

[0020] It is to be understood that the term "one" should be understood as "at least one" or "one or more", that is, in one embodiment, the number of an element may be one, while in another embodiment, the number of the element may be multiple, and the term "one" should not be understood as a limitation on the quantity.

[0021] refer to Figure 1 and Figure 2 The embodiment of the present application provides an epitaxial wafer graphite carrier, including a carrier body 10. The carrier body 10 is provided with a through hole 101 suitable for accommodating an epitaxial wafer and a heat spreader in the middle position in the vertical direction, and the carrier body 10 is evenly provided with multiple groups of support members 20 for supporting the epitaxial wafer along the circumferential direction at the lower part of the through hole 101, and each group of the support members 20 includes at least two support angles 21, wherein the heat spreader is located on the top of the epitaxial wafer to press the epitaxial wafer down and fix it on the support members 20. In this way, through multiple groups of support members 20, each group of support members 20 includes at least two support angles 21, the bearing strength of the support members 20 on the epitaxial wafer and the heat spreader can be effectively improved. Even if a certain support angle 21 is damaged due to the placement of the wafer or when it is placed in a baking tray furnace, the adjacent support angle 21 can also play a supporting role, which is safer and can also reduce the probability of scrapping the entire graphite carrier, thereby saving resources and reducing costs.

[0022] In one embodiment, the support members 20 are implemented as three groups or four groups, and each group of the support members 20 includes two or three support angles 21, and there are gaps between all the support angles 21 in each group of the support members 20.

[0023] In one embodiment, the carrier body 10 is provided with an annular limiting groove 102 on the periphery of the through hole 101, which is used to cooperate with the annular boss on the heat spreader, so that when the heat spreader presses the epitaxial wafer into place, the annular boss is just embedded in the annular limiting groove 102, so that when the carrier corner 21 supports the epitaxial wafer, the carrier body 10 can also simultaneously support the heat spreader through the annular limiting groove 102, even if the operator does not properly control the operation such as force and speed, it is not easy to damage the carrier corner 21 through the epitaxial wafer, and it is safer to use. In addition, based on the cooperation between the annular limiting groove 102 and the annular boss, it can also play a role in positioning the heat spreader, so that the heat spreader can be placed in place quickly and accurately.

[0024] Further preferably, a plurality of tenons 11 are arranged at intervals in the annular limiting groove 102, and the annular boss is provided with grooves matching the tenons 11, thereby further improving the positioning accuracy of the heat spreader. In addition, the heat spreader can be limited circumferentially to avoid movement of the epitaxial wafer due to human drag or inertia, so that the epitaxial wafer remains in its original position, and the gap between the flat edge of the graphite carrier and the flat edge of the epitaxial wafer can be maintained, thereby reducing the probability of cracking.

[0025] In one embodiment, there are three tenons 11, and the angle between the three tenons 11 is 120°. Furthermore, the height of the tenon 11 is 1 mm, and the width of the tenon 11 is 2 mm. Correspondingly, a slot matching the tenon 11 is provided on the heat spreader, wherein the depth of the slot is 1.1 mm and the width is 2.2 mm.

[0026] It should be understood by those skilled in the art that the embodiments of the present invention described above and shown in the accompanying drawings are only examples and do not limit the present invention. The advantages of the present invention have been fully and effectively realized. The functions and structural principles of the present invention have been demonstrated and explained in the embodiments, and the embodiments of the present invention may be deformed or modified in any way without departing from the principles.

Claims

1. Epitaxial wafer graphite carrier, characterized in that: The invention comprises a carrier body, wherein a through hole suitable for accommodating an epitaxial wafer and a heat spreader is arranged in the middle position in the vertical direction of the carrier body, and a plurality of groups of support members for supporting the epitaxial wafer are evenly arranged along the circumferential direction at the lower part of the through hole of the carrier body, wherein each group of the support members comprises at least two carrier angles, wherein the heat spreader is located on the top of the epitaxial wafer to press the epitaxial wafer down and fix it on the support members.

2. The epitaxial wafer graphite carrier according to claim 1, characterized in that: The support members are implemented in three or four groups, each group of the support members includes two or three support angles, and there are gaps between all the support angles in each group of the support members.

3. The epitaxial wafer graphite carrier according to claim 1 or 2, characterized in that: The carrier body is provided with an annular limiting groove on the periphery of the through hole for cooperating with the annular boss on the heat spreader, so that when the epitaxial wafer is pressed into place by the heat spreader, the annular boss is just embedded in the annular limiting groove.

4. The epitaxial wafer graphite carrier as claimed in claim 3, characterized in that: A plurality of tenons are arranged at intervals in the annular limiting groove, and the annular boss is provided with a slot matched with the tenons.

5. The epitaxial wafer graphite carrier as claimed in claim 4, characterized in that: There are three tenons, and the angle between the three tenons is 120°.

6. The epitaxial wafer graphite carrier as claimed in claim 5, characterized in that: The height of the tenon is 1 mm, and the width of the tenon is 2 mm.

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