Package structure

Abstract

The utility model provides a packaging structure. The packaging structure comprises a lower bonding pad; the first bump is arranged on the lower bonding pad, and the width of the first bump is gradually reduced in the direction away from the lower bonding pad; the upper bonding pad is arranged above the lower bonding pad; the second protruding block is arranged on the upper bonding pad, the width of the second protruding block is gradually reduced in the direction away from the upper bonding pad, and the first protruding block and the second protruding block are horizontally overlapped. By changing the shapes of the bumps, the bumps are gradually shrunk in the direction away from the bonding pad, so that the area of a horizontal plane pressed down by the bonding pad is reduced, the distance between the bumps is increased, the fluidity of a filling material in a gap is enhanced, filler particles are prevented from being clamped, the generation of holes is reduced, and different bumps are horizontally overlapped, so that the uniformity of the bumps is improved. And the thickness of the packaging structure is reduced.

Description

Technical Field

[0001] The present application relates to the field of semiconductor packaging technology, and in particular to a packaging structure. Background Art

[0002] When existing fan-out packages are joined, welding is usually used to interconnect two fan-out packages through bumps, and the material of the bumps can be solder. However, since the spacing between two adjacent bumps of the fan-out package is small, during the welding process, pressing the fan-out package down will cause the solder on the pad to expand outward, thereby making the gap between the solder smaller. When filling the bottom filling material, the filler particles in the bottom filling material are easily stuck in the gap between the solder and cannot flow, causing voids. Utility Model Content

[0003] The present application proposes a packaging structure.

[0004] In a first aspect, the present application provides a packaging structure, including: a lower pad; a first bump, arranged on the lower pad, and the width of the first bump gradually decreases away from the lower pad; an upper pad, arranged above the lower pad; a second bump, arranged on the upper pad, and the width of the second bump gradually decreases away from the upper pad, wherein the first bump horizontally overlaps with the second bump.

[0005] In some optional embodiments, the tip of the first bump horizontally overlaps the second bump.

[0006] In some optional embodiments, the vertical center axis of the first protrusion and the vertical center axis of the second protrusion are staggered with each other.

[0007] In some optional implementations, a bottom filling material is filled between the first bump and the second bump.

[0008] In some optional embodiments, the tip of the first bump horizontally overlaps filler particles of the bottom filling material.

[0009] In some optional embodiments, an electrical connector is further included, and the electrical connector is disposed between the first bump and the second bump for electrically connecting the first bump and the second bump.

[0010] In some optional embodiments, the electrical connector comprises a nanowire.

[0011] In some optional embodiments, the tip angle of the first protrusion is an acute angle.

[0012] In some optional embodiments, the first bump includes a first protrusion, a first seed layer covering the first protrusion, and a first metal layer formed on the first seed layer.

[0013] In some optional implementations, the projection of the upper pad falls within the projection range of the lower pad.

[0014] In order to solve the problem that the fan-out package is pressed down, which causes the solder on the pad to expand outward, thereby making the gap between the solders smaller, and when filling the bottom filling material, the filler particles are easily stuck in the gaps between the solders and cannot flow, causing voids, the present application proposes a packaging structure, which changes the shape of the bumps so that the bumps gradually shrink away from the pads, reduces the horizontal surface area of ​​the pads pressed down, increases the spacing between the bumps, enhances the fluidity of the filling material in the gaps, avoids the filler particles from being stuck, reduces the generation of voids, and reduces the horizontal overlap between different bumps to reduce the thickness of the packaging structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Other features, objects and advantages of the present application will become more apparent by reading the detailed description of non-limiting embodiments made with reference to the following drawings:

[0016] Figure 1 It is a structural schematic diagram of surface connection between existing fan-out packaging structures;

[0017] Figure 2 is a structural schematic diagram of an embodiment 2a of a packaging structure according to the present application;

[0018] Figure 3 is a structural schematic diagram of an embodiment 3a of a packaging structure according to the present application;

[0019] Figure 4 is a structural schematic diagram of an embodiment 4a of a packaging structure according to the present application;

[0020] Figure 5 is a schematic structural diagram of an embodiment 5a of a packaging structure according to the present application;

[0021] Figure 6 is a structural schematic diagram of an embodiment 6a of a packaging structure according to the present application;

[0022] Figure 7 is a structural schematic diagram of an embodiment 7a of a packaging structure according to the present application;

[0023] Figure 8-Figure 40 is a schematic diagram of manufacturing steps according to an embodiment 2a of the packaging structure of the present application;

[0024] Fig.11yes Fig.10 A partial enlarged view of

[0025] Fig.13 yes Fig.12 A partial enlarged view of

[0026] Fig.17 yes Fig.16 A partial enlarged view of

[0027] Fig. 20 yes Fig.19 A partial enlarged view of

[0028] Fig.25 yes Fig.24 A partial enlarged view of

[0029] Fig. 27 yes Fig.26 A partial enlarged view of

[0030] Fig.31 yes Fig.30 A partial enlarged view of

[0031] Fig.34 yes Fig.33 A partial enlarged view of .

[0032] Description of reference numerals / symbols:

[0033] 101-lower fan-out redistribution layer; 102-upper fan-out redistribution layer; 103-lower pad; 104-upper pad; 105-bottom filling material; 106-filler particles; 107-solder; 201-lower pad; 202-first bump; 203-upper pad; 204-second bump; 205-bottom filling material; 206-upper substrate; 207-first dielectric layer; 208-first photoresist; 209- Lower substrate; 210-second dielectric layer; 211-second photoresist; 212-molding material; 213-solder ball; 214-carrier; 2021-first protrusion; 2022-first seed layer; 2023-first metal layer; 2024-first electrical connection; 2041-second protrusion; 2042-second seed layer; 2043-second metal layer; 2044-second electrical connection; 2051-filler particles. DETAILED DESCRIPTION

[0034] The specific implementation methods of the present application are described below in conjunction with the accompanying drawings and embodiments. Through the contents recorded in this specification, those skilled in the art can easily understand the technical problems solved by the present application and the technical effects produced. It is understood that the specific embodiments described herein are only used to explain the relevant inventions, rather than to limit the inventions. In addition, for ease of description, only the parts related to the relevant inventions are shown in the accompanying drawings.

[0035] It should be readily understood that the meanings of “on,” “over,” and “over” in this application should be interpreted in the broadest manner, so that “on” not only means “directly on something,” but also means “on something” including the presence of intermediate components or layers therebetween.

[0036] Additionally, for ease of description, spatially relative terms such as "below," "beneath," "lower," "above," "upper," etc. may be used herein to describe the relationship of one element or component to another element or component illustrated in the drawings. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the drawings. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.

[0037] The term "layer" as used herein refers to a material portion including an area with a certain thickness. The layer can extend over the entire lower or upper structure, or can have a degree less than the range of the lower or upper structure. In addition, the layer can be a region of a homogeneous or inhomogeneous continuous structure, and its thickness is less than the thickness of the continuous structure. For example, the layer can be located between the top surface and the bottom surface of the continuous structure or between any pair of horizontal planes therebetween. The layer can extend horizontally, vertically and / or along a tapered surface. A substrate can be a layer, one or more layers can be included therein, and / or one or more layers can be present thereon, above and / or below. A layer can include multiple layers. For example, a semiconductor layer can include one or more doped or undoped semiconductor layers, and can have the same or different materials.

[0038] The term "substrate" as used herein refers to a material on which subsequent material layers are added. The substrate itself may be patterned. The material added on top of the substrate may be patterned or may remain unpatterned. In addition, the substrate may include a variety of semiconductor materials, such as silicon, silicon carbide, gallium nitride, germanium, gallium arsenide, indium phosphide, etc. Alternatively, the substrate may be made of a non-conductive material, such as glass, plastic, or sapphire wafer, etc. Further alternatively, the substrate may have a semiconductor device or circuit formed therein.

[0039] It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of the specification are only used to match the contents recorded in the specification for the understanding and reading of those skilled in the art, and are not used to limit the limiting conditions for the implementation of the present application, so they have no substantial technical significance. Any modification of the structure, change in the proportional relationship, or adjustment of the size, without affecting the effects and purposes that can be achieved by the present application, should still fall within the scope of the technical content disclosed in the present application. At the same time, the terms such as "on", "first", "second" and "one" quoted in this specification are only for the convenience of narration, and are not used to limit the scope of the implementation of the present application. The change or adjustment of their relative relationship should also be regarded as the scope of the implementation of the present application without substantially changing the technical content.

[0040] It should also be noted that the longitudinal section corresponding to the embodiment of the present application may be a section corresponding to the front view direction, the transverse section may be a section corresponding to the right view direction, and the horizontal section may be a section corresponding to the top view direction.

[0041] In addition, the embodiments and features in the embodiments of the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0042] like Figure 1 As shown, Figure 1 The present invention is a structural schematic diagram of surface connection between existing fan-out packaging structures.

[0043] like Figure 1 The structure for surface connection between fan-out packages shown includes a lower fan-out redistribution layer 101 , an upper fan-out redistribution layer 102 , a lower pad 103 , an upper pad 104 , a bottom filling material 105 (including filler particles 106 ) and solder 107 .

[0044] A lower pad 103 is disposed on the lower fan-out redistribution layer 101 , and an upper pad 104 is disposed on the upper fan-out redistribution layer 102 .

[0045] In this structure, two packages are interconnected by welding, and solder 107 is arranged on the lower pad 103 and the upper pad 104. During the welding process, the upper fan-out redistribution layer 102 is pressed down, which will cause the solder 107 on the lower pad 103 and the upper pad 104 to expand outward, thereby reducing the gap between the solders 107 in the horizontal direction. When filling the bottom filling material 105, the filler particles 106 in the bottom filling material 105 are easily stuck in the gap between the solders 107 and cannot flow, resulting in voids.

[0046] like Figure 2 As shown, Figure 2 It is a structural schematic diagram of an embodiment 2a of the packaging structure according to the present application.

[0047] like Figure 2 As shown, the packaging structure 2a of the present application includes a lower pad 201, a first bump 202, an upper pad 203 and a second bump 204, wherein the first bump 202 is arranged on the lower pad 201, and the width of the first bump 202 gradually decreases away from the lower pad 201, the upper pad 203 is arranged above the lower pad 201, and the second bump 204 is arranged on the upper pad 203, and the width of the second bump 204 gradually decreases away from the upper pad 203, wherein the first bump 202 and the second bump 204 overlap horizontally.

[0048] Here, the width of the first bump 202 is set to gradually decrease in the direction away from the lower pad 201, and the width of the second bump 204 is set to gradually decrease in the direction away from the upper pad 203. In this way, in the process of pressing the upper pad 203 downward to achieve bonding between the first bump 202 and the second bump 204, since the widths of the first bump 202 and the second bump 204 are both gradually decreased, that is, the horizontal surface areas of the first bump 202 and the second bump 204 are gradually decreased, the upper pad 203 can reduce the horizontal area of ​​the downward pressing process. In addition, compared with the existing bump setting, the first bump 202 and the second bump 204 with gradually decreased widths can increase the distance between two adjacent first bumps 202 or adjacent second bumps 204, so that the fluidity of the bottom filling material 205 in the gap is enhanced, which can avoid the filler particles 2051 from being stuck and reduce the generation of voids. In addition, the first bump 202 and the second bump 204 overlap horizontally, which can reduce the thickness of the packaging structure.

[0049] Here, the distance between the upper surface of the lower pad 201 and the lower surface of the upper pad 230 may be in a range of 5 μm to 50 μm. In some optional implementations, the tip of the first bump 202 horizontally overlaps the second bump 204 .

[0050] Here, the tip of the first bump 202 may refer to a portion of the first bump 202 where the width tapers, or a portion where the width is less than 1 / 2 (or 1 / 3, 1 / 4) of the maximum width; the tip of the second bump 204 may refer to a portion of the second bump 204 where the width tapers, or a portion where the width is less than 1 / 2 (or 1 / 3, 1 / 4) of the maximum width.

[0051] In some optional implementations, the projection of the upper pad 203 falls within the projection range of the lower pad 201 .

[0052] Continue to refer Figure 2The tip of the first bump 202 and the second bump 204 overlap in the horizontal direction, or the tip of the second bump 204 overlaps in the horizontal direction, or the tip of the first bump 202 and the tip of the second bump 204 overlap in the horizontal direction. The horizontally overlapping first bump 202 and second bump 204 can reduce the thickness of the package structure.

[0053] In some optional implementations, the vertical center axis of the first protrusion 202 and the vertical center axis of the second protrusion 204 are staggered.

[0054] Here, the spacing between the vertical center axes of two adjacent first bumps 202 or the vertical center axes of two adjacent second bumps 204 can range from 2μm to 20μm, the width of a single first bump 202 or a single second bump 204 can range from 1μm to 10μm, and the gap between two adjacent first bumps 202 or the gap between two adjacent second bumps 204 can range from 1μm to 10μm.

[0055] Here, the vertical center axis of the first bump 202 is parallel to the vertical center axis of the second bump 204 in the vertical direction, and the vertical center axis of the first bump 202 does not overlap with the vertical center axis of the second bump 204 in the vertical direction. In this way, in the process of pressing the upper pad 203 down to achieve bonding between the upper pad 203 and the lower pad 201, since the vertical center axis of the first bump 202 and the vertical center axis of the second bump 204 are staggered from each other, the first bump 202 and the second bump 204 can be horizontally overlapped, thereby reducing the thickness of the packaging structure.

[0056] It is understandable that, since the vertical center axis of the first protrusion 202 and the vertical center axis of the second protrusion 204 are staggered, the positions of the first protrusion 202 and the second protrusion 204 can be arranged in a variety of ways.

[0057] like Figure 3 As shown, Figure 3 It is a structural schematic diagram of an embodiment 3a of the packaging structure according to the present application.

[0058] refer to Figure 3 In some optional implementations, the first bump 202 is disposed at the lower right side of the second bump 204 , and the left side of the first bump 202 vertically overlaps with the right side of the second bump 204 .

[0059] Here, the first bump 202 is disposed at the lower right, and the second bump 204 is disposed at the upper left. When interconnecting, the left side of the first bump 202 vertically overlaps the right side of the second bump 204.

[0060] like Figure 4 As shown, Figure 4It is a structural schematic diagram of an embodiment 4a of the packaging structure according to the present application.

[0061] refer to Figure 4 In some optional implementations, the first bump 202 is disposed at the lower left of the second bump 204 , and the right side of the first bump 202 overlaps horizontally and vertically with the left side of the second bump 204 .

[0062] Here, the first bump 202 is disposed at the lower left, and the second bump 204 is disposed at the upper right, and the right side of the first bump 202 and the left side of the second bump 204 overlap horizontally and vertically.

[0063] In some optional implementations, a bottom filling material 205 is filled between the first bump 202 and the second bump 204 .

[0064] Here, the bottom filling material 205 can be a non-metallic material. For example, the bottom filling material can be polyimide (PI), epoxy resin, anhydride-cured fluorene resin (Ajinomoto Build-up Film, ABF), prepreg material or semi-cured resin, semi-cured sheet (PP, PrePreg) and / or acrylic. The bottom filling material 205 can also be organic photosensitive, non-photosensitive liquid and / or dry film material.

[0065] The bottom filling material 205 can protect and stabilize the first bump 202 and the second bump 204 .

[0066] In some optional implementations, the tip of the first bump 202 horizontally overlaps the filler particles 2051 of the bottom filling material 205 .

[0067] In some optional implementations, the tip of the second bump 204 horizontally overlaps the filler particles 2051 of the bottom filling material 205 .

[0068] Continue to refer Figure 2 The bottom filling material 205 has filler particles 2051. When the bottom filling material 205 is filled into the gap between the first bump 202 and the second bump 204, the filler particles 2051 also flow into the gap between the first bump 202 and the second bump 204. The tip of the first bump 202 and the filler particles 2051 of the bottom filling material 205 overlap in the horizontal direction. The tip of the second bump 204 and the filler particles 2051 of the bottom filling material 205 overlap in the horizontal direction.

[0069] Since the width of the first bump 202 and the width of the second bump 204 are both tapered, the horizontal area of ​​the upper pad 203 being pressed down is reduced, and the spacing between two adjacent first bumps 202 is increased, and the spacing between two adjacent second bumps 204 is increased. Therefore, after the upper pad 203 is pressed down to complete the bonding of the upper pad 203 and the lower pad 201, the fluidity of the filler particles 2051 of the bottom filling material 205 is enhanced due to the increase in the spacing between the bumps, which can prevent the filler particles from being stuck, thereby reducing the generation of voids.

[0070] In some optional implementations, an electrical connector is further included. The electrical connector is disposed between the first bump 202 and the second bump 204 and is used to electrically connect the first bump 202 and the second bump 204 .

[0071] Here, the electrical connection member may be made of various metal materials, for example, copper, gold, silver, aluminum, palladium, platinum, nickel, and alloys thereof.

[0072] In some alternative embodiments, the electrical connector comprises a nanowire.

[0073] Here, the thickness of the nanowires ranges from several nm to tens of nm.

[0074] In some optional implementations, the first bump 202 includes a first convex body 2021 , a first seed layer 2022 covering the first convex body 2021 , and a first metal layer 2023 formed on the first seed layer 2022 .

[0075] Here, the first protrusion 2021 can be a dielectric layer, which can include organic and / or inorganic substances, wherein the organic substance can be, for example, polyamide fiber (Polyamide, PA), polyimide (Polyimide, PI), epoxy resin (Epoxy), poly-p-phenylene benzobisoxazole (Poly-p-phenylene benzobisoxazole, PBO) fiber, FR-4 epoxy glass cloth laminate, PP (PrePreg, prepreg material or semi-cured resin, semi-cured sheet), ABF (Ajinomoto Build-up Film), etc., and the inorganic substance can be, for example, silicon (Si), glass, ceramic, silicon oxide, silicon nitride, tantalum oxide, etc.

[0076] Here, the thickness of the first metal layer 2023 ranges from several μm to several tens of μm.

[0077] Here, the first seed layer 2022 may be made of titanium (Ti), copper (Cu), tungsten (W), nickel (Ni), and alloys thereof.

[0078] A first metal layer 2023 is disposed on the first seed layer 2022 . The first metal layer 2023 may be made of various metal materials, such as copper, gold, silver, aluminum, palladium, platinum, nickel, and alloys thereof.

[0079] In some optional embodiments, the second bump 204 includes a second protrusion 2041 , a second seed layer 2042 covering the second protrusion 2041 , and a second metal layer 2043 formed on the second seed layer 2042 .

[0080] Here, the second protrusion 2041 can be a dielectric layer, which can include organic and / or inorganic substances, wherein the organic substance can be, for example, polyamide fiber (Polyamide, PA), polyimide (Polyimide, PI), epoxy resin (Epoxy), poly-p-phenylene benzobisoxazole (Poly-p-phenylene benzobisoxazole, PBO) fiber, FR-4 epoxy glass cloth laminate, PP (PrePreg, prepreg material or semi-cured resin, semi-cured sheet), ABF (Ajinomoto Build-up Film), etc., and the inorganic substance can be, for example, silicon (Si), glass, ceramic, silicon oxide, silicon nitride, tantalum oxide, etc.

[0081] Here, the thickness of the second metal layer 2043 ranges from several μm to several tens of μm.

[0082] Here, the second seed layer 2042 may be made of titanium (Ti), copper (Cu), tungsten (W), nickel (Ni), and alloys thereof.

[0083] A second metal layer 2043 is disposed on the second seed layer 2042 . The second metal layer 2043 may be made of various metal materials, such as copper, gold, silver, aluminum, palladium, platinum, nickel, and alloys thereof.

[0084] The electrical connectors may include a first electrical connector 2024 and a second electrical connector 2044 .

[0085] In some optional implementations, the first electrical connector 2024 is disposed on the first metal layer 2023 of the first bump 202 .

[0086] Here, the thickness of the first electrical connection member 2024 is between several nm and several hundred nm.

[0087] In some optional implementations, the second electrical connector 2044 is disposed on the second metal layer 2043 of the second bump 204 .

[0088] Here, the thickness of the second electrical connection member 2044 is between several nm and several hundred nm.

[0089] Here, the first electrical connection 2024 and the second electrical connection 2044 may be nanowires.

[0090] Here, in the process of pressing down the upper pad 203 to achieve bonding between the first bump 202 and the second bump 204 , the first electrical connector 2024 and the second electrical connector 2044 may be bonded.

[0091] Here, the thickness of the first electrical connection member 2024 and the second electrical connection member 2044 after bonding is between several nm and several tens of nm.

[0092] Here, the material of the first electrical connector 2024 and the second electrical connector 2044 includes but is not limited to copper.

[0093] Compared with welding, by using nanowires to electrically connect the first bump 202 and the second bump 204, the spacing between adjacent bumps will not be reduced due to solder expansion, so that filler particles cannot flow in the gaps between the bumps to cause voids. In addition, bonding through nanowires can provide better electrical performance.

[0094] Here, the first bump 202 and the second bump 204 may have different shapes.

[0095] In some optional implementations, the shape of the first bump 202 may be a triangle or a trapezoid.

[0096] In some optional implementations, the tip angle of the first protrusion 202 is an acute angle.

[0097] Here, the angle θ1 between an inner angle of the triangle of the first bump 202 close to the lower pad 201 and the lower pad 201 is in the range of 5° to 85°.

[0098] In some optional implementations, the shape of the second protrusion 204 may be a triangle or a trapezoid.

[0099] In some optional implementations, the tip angle of the second protrusion 204 is an acute angle.

[0100] Here, the angle θ2 between an inner angle of the triangle of the second bump 204 close to the upper pad 203 and the upper pad 203 is in the range of 5° to 85°.

[0101] In some optional implementations, the lower pad 201 is separated from the upper pad 203 by the first bump 202 and the second bump 204 .

[0102] refer to Fig.39 In some optional implementations, the lower pad 201 is arranged to be located on the upper surface of the lower substrate, and the lower surface of the lower substrate is provided with a solder ball 213.

[0103] Here, the solder ball 213 is a spherical connecting member, the size of the solder ball may range from 30 μm to 200 μm, and the interval between two solder balls may range from 50 μm to 400 μm.

[0104] Continue to refer Figure 2 The shapes of the first bump 202 and the second bump 204 can both be set to be a triangle.

[0105] refer to Figure 5 , Figure 5 is a schematic structural diagram of an embodiment 5a of a packaging structure according to the present application; Figure 5 The package structure 5a shown is similar to Figure 2 The package structure 2a shown is different in that:

[0106] like Figure 5 As shown, the shapes of the first bump 202 and the second bump 204 may be set to be trapezoidal.

[0107] Similarly, the width of the trapezoidal first bump 202 is set to taper in the direction away from the lower pad 201, and the width of the trapezoidal second bump 204 is set to taper in the direction away from the upper pad 203. The widths of the first bump 202 and the second bump 204 are both tapered, that is, the horizontal plane areas of the first bump 202 and the second bump 204 are tapered, and the upper pad 203 reduces the horizontal area of ​​the downward pressure during the downward pressure process. Moreover, compared with the existing bump setting, the setting of the first bump 202 and the second bump 204 with tapered width can increase the spacing between adjacent bumps, thereby solving the problem of voids caused by the reduction of the spacing between the solders due to the expansion of the solder, which affects the flow of the filling material.

[0108] refer to Figure 6 , Figure 6 is a structural schematic diagram of an embodiment 6a of a packaging structure according to the present application; Figure 6 The package structure 6a shown is similar to Figure 2 The package structure 2a shown is different in that:

[0109] like Figure 6 As shown, the shape of the first bump 202 can be set to a triangle or a trapezoid. Similarly, the shape of the second bump 204 can also be set to a triangle or a trapezoid. Similarly, the width of the first bump 202 in the triangle or trapezoid shape is set to taper away from the lower pad 201, and the width of the second bump 204 in the triangle or trapezoid shape is set to taper away from the upper pad 203. Figure 2 The effect shown in the package structure 2a is shown.

[0110] Here, the tip portion of the first bump 202 and the tip portion of the second bump have different overlapping patterns.

[0111] Continue to refer Figure 2 , the tip of the first bump 202 partially overlaps the second bump 204 horizontally, and the same can be achieved as Figure 2 The effect shown in the package structure 2a is shown.

[0112] refer to Figure 7 , Figure 7 is a structural schematic diagram of an embodiment 7a of a packaging structure according to the present application; Figure 7 The package structure 7a shown is similar to Figure 2 The package structure 2a shown is different in that:

[0113] The tip of the first bump 202 completely overlaps the second bump 204 horizontally, and the same can be achieved. Figure 2 The package structure 2 a shown in the figure has the same effect as that shown in the figure. In addition, the tip of the first bump 202 completely horizontally overlaps the second bump 204 , which can further reduce the thickness of the package structure.

[0114] refer to Figure 8-Figure 40 , Figure 8-Figure 40 It is a schematic diagram of the manufacturing steps of an embodiment 2a of the packaging structure according to the present application.

[0115] refer to Figure 8 , providing an upper substrate 206 and an upper pad 203, wherein the upper pad 203 is disposed on the upper substrate 206,

[0116] Here, the upper substrate 206 may be a wafer or a panel.

[0117] The upper substrate 206 may include organic and / or inorganic substances. For example, the organic substances may be polyamide fiber (PA), polyimide (PI), epoxy resin (Epoxy), poly-p-phenylene benzobisoxazole (PBO) fiber, FR-4 epoxy glass cloth laminate, PP (PrePreg, prepreg material or semi-cured resin, semi-cured sheet), ABF (Ajinomoto Build-up Film), etc., and the inorganic substances may be silicon (Si), glass, ceramic, silicon oxide, silicon nitride, tantalum oxide, etc. The upper substrate 206 may also be a PCB (Printed Circuit Board).

[0118] refer to Fig. 9 , providing a first dielectric layer 207.

[0119] Here, the first dielectric layer 207 may be formed by coating and may be patterned by photolithography (exposure), and the first dielectric layer 207 is disposed on the upper substrate 206 and covers the upper pad 203 .

[0120] The first dielectric layer 207 may include organic and / or inorganic substances, wherein the organic substances may be, for example, polyamide fiber (PA), polyimide (PI), epoxy resin (Epoxy), poly-p-phenylene benzobisoxazole (PBO) fiber, FR-4 epoxy glass cloth laminate, PP (PrePreg, prepreg material or semi-cured resin, semi-cured sheet), ABF (Ajinomoto Build-up Film), etc., and the inorganic substances may be, for example, silicon (Si), glass, ceramic, silicon oxide, silicon nitride, tantalum oxide, etc.

[0121] refer to Fig.10 and Fig.11 , Fig.11 yes Fig.10 A local enlarged view of the second protrusion 2041 is provided.

[0122] Here, the second protrusion 2041 may be triangular and / or trapezoidal.

[0123] Here, the second protrusion 2041 may be formed by developing the first dielectric layer 207 after photolithography. Here, the second protrusion 2041 may be a portion of the first dielectric layer 207 remaining after the first dielectric layer 207 is developed.

[0124] Here, the second protrusion 2041 is provided with a width that gradually decreases in a direction away from the upper pad 203 , which can facilitate the subsequent manufacturing process to form a triangular and / or trapezoidal second bump 204 .

[0125] refer to Fig.12 and Fig.13 , Fig.13 yes Fig.13 A local enlarged view of the second seed layer 2042 is provided.

[0126] Here, the second seed layer 2042 may be formed on the surface of the second protrusion 2041 by a physical vapor deposition method.

[0127] The second seed layer 2042 can be made of titanium (Ti), copper (Cu), tungsten (W), nickel (Ni) and alloys thereof.

[0128] refer to Fig.14, providing a first photoresist 208 .

[0129] Here, the first photoresist 208 may be formed by coating and patterned by photolithography (exposure). The first photoresist 208 is disposed on the upper substrate 206 and covers the second seed layer 2042 .

[0130] refer to Fig.15 , providing a second metal layer 2043.

[0131] Here, the first photoresist 208 is developed to expose the second seed layer 2042 , and then, electroplating is performed on the second seed layer 2042 to form the second metal layer 2043 .

[0132] refer to Fig.16 and Fig.17 , Fig.17 yes Fig.16 A partial enlarged view of .

[0133] Here, the remaining first photoresist 208 is removed and the second seed layer 2042 is etched to obtain Fig.16 and 17 The second metal layer 2043 is shown.

[0134] At this point, the manufacturing of the second bump 204 is completed. By providing the second bump 204 with a tapered width, the distance between two adjacent second bumps 204 can be increased, and in the subsequent process of pressing down the upper pad 203, the horizontal area of ​​the pressing can be reduced.

[0135] refer to Fig.18 , a portion of the second metal layer 2043 is etched.

[0136] refer to Fig.19 and Fig. 20 , Fig. 20 yes Fig.19 A partial enlarged view of the invention provides a second connecting member 2044 and performs cutting processing on the packaged product.

[0137] Here, a portion of the second metal layer 2043 is etched to obtain the second connector 2044 .

[0138] Here, the second connection member 2044 may be a nanowire.

[0139] refer to Fig.21 , after cutting, chip picking is performed.

[0140] refer to Fig. 22 , providing a lower substrate 209 and a lower pad 201 , wherein the lower substrate 209 may be placed on or formed on a removable carrier 214 ;

[0141] Here, a lower substrate 209 and a lower pad 201 are provided. The lower pad 201 is disposed on the lower substrate 209.

[0142] Similarly, the lower substrate 209 may be a wafer or a panel. Here, the lower substrate 209 may also be a redistribution layer.

[0143] Here, the thickness of the dielectric layer of the redistribution layer may be in the range of 5 μm to 20 μm.

[0144] The thickness of the redistribution layer may be in the range of 1 μm to 10 μm, wherein the seed layer thickness of the redistribution layer may be in the range of 0.1 μm to 1 μm, and the line width or line spacing may be in the range of 2 μm / 2 μm to 20 μm / 20 μm.

[0145] The lower substrate 209 may be a substrate composed of a conductive material and a dielectric material. Here, the dielectric material may include organic and / or inorganic materials. For example, the organic material may be polyamide fiber (PA), polyimide (PI), epoxy resin (Epoxy), poly-p-phenylenebenzobisoxazole (PBO) fiber, FR-4 epoxy glass cloth laminate, PP (PrePreg, prepreg material or semi-cured resin, semi-cured sheet), ABF (Ajinomoto Build-up Film), etc., and the inorganic material may be silicon (Si), glass, ceramic, silicon oxide, silicon nitride, tantalum oxide, etc. The lower substrate 209 may also be a PCB (Printed Circuit Board).

[0146] refer to Fig.23 , providing a second dielectric layer 210.

[0147] Here, the second dielectric layer 210 may be formed by coating and may be patterned by photolithography (exposure), and the second dielectric layer 210 is disposed on the lower substrate 209 and covers the lower pad 201 .

[0148] The second dielectric layer 210 may include organic and / or inorganic substances, wherein the organic substances may be, for example, polyamide fiber (PA), polyimide (PI), epoxy resin (Epoxy), poly-p-phenylene benzobisoxazole (PBO) fiber, FR-4 epoxy glass cloth laminate, PP (PrePreg, prepreg material or semi-cured resin, semi-cured sheet), ABF (Ajinomoto Build-up Film), etc., and the inorganic substances may be, for example, silicon (Si), glass, ceramic, silicon oxide, silicon nitride, tantalum oxide, etc.

[0149] refer to Fig.24 and Fig.25 , Fig.25 yes Fig.24 A local enlarged view of the first convex body 2021 is provided.

[0150] Here, the first protrusion 2021 may be triangular and / or trapezoidal.

[0151] Here, the first protrusion 2021 may be formed by developing the second dielectric layer 210 after photolithography. Here, the first protrusion 2021 may be a portion of the second dielectric layer 210 remaining after the second dielectric layer 210 is developed.

[0152] Here, the first protrusion 2021 is provided with a width that gradually decreases in a direction away from the lower pad 201 , which can facilitate the subsequent manufacturing process to form a triangular and / or trapezoidal first bump 202 .

[0153] refer to Fig.26 and Fig. 27 , Fig. 27 yes Fig.26 A local enlarged view of the present invention provides a first seed layer 2022.

[0154] Here, the first seed layer 2022 may be formed on the surface of the first protrusion 2021 by a physical vapor deposition method.

[0155] The first seed layer 2022 can be made of materials such as titanium (Ti), copper (Cu), tungsten (W), nickel (Ni) and alloys thereof.

[0156] refer to Fig.28 , providing a second photoresist 211.

[0157] Here, the second photoresist 211 may be formed by coating and patterned by photolithography (exposure). The second photoresist 211 is disposed on the lower substrate 209 and covers the first seed layer 2022 .

[0158] refer to Fig.29 , providing a first metal layer 2023.

[0159] Here, the second photoresist 211 is developed to expose the first seed layer 2022 , and then, electroplating is performed on the first seed layer 2022 to form the first metal layer 2023 .

[0160] refer to Fig.30 and Fig.31 , Fig.31 yes Fig.30 A partial enlarged view of .

[0161] Here, the remaining second photoresist 211 is removed and the first seed layer 2022 is etched to obtain Fig.30 and 31 The first metal layer 2023 is shown.

[0162] At this point, the manufacturing of the first bump 202 is completed. By providing the first bump 202 with a tapered width, the spacing between two adjacent first bumps 202 can be increased, and in the subsequent process of pressing down the upper pad 203, the horizontal area of ​​the pressing can be reduced, thereby enhancing the fluidity of the filler particles 2051 of the bottom filling material 205 and reducing the generation of voids.

[0163] refer to Fig.32 , a portion of the first metal layer 2023 is etched.

[0164] refer to Fig.33 and Fig.34 , Fig.34 yes Fig.33 A local enlarged view of the invention provides a first electrical connector 2024.

[0165] Here, a portion of the first metal layer 2023 is etched to obtain the first electrical connection member 2024 .

[0166] Here, the first electrical connection 2024 may be a nanowire.

[0167] refer to Fig.35 ,Will Figure 8-Figure 21 The formed package structure is inverted and pressed down to Figure 22-Figure 34 On the packaging structure formed.

[0168] Here, Figure 8-Figure 21 The package structure formed and Figure 22-Figure 34 The formed packaging structures are bonded by nanowires, which solves the problem of voids caused by the flow of filling materials being affected by the smaller spacing between solders due to solder expansion. In addition, the first bump 202 and the second bump 204 overlap horizontally, which can reduce the thickness of the packaging structure.

[0169] refer to Fig.36 , filling bottom filling material 205 between the two packaging structures.

[0170] Here, the bottom filling material 205 can be a non-metallic material. For example, the bottom filling material can be polyimide (PI), epoxy resin, anhydride-cured fluorene resin (Ajinomoto Build-up Film, ABF), prepreg material or semi-cured resin, semi-cured sheet (PP, PrePreg) and / or acrylic. The bottom filling material 205 can also be organic photosensitive, non-photosensitive liquid and / or dry film material.

[0171] The bottom filling material 205 can protect and stabilize the first bump 202 and the second bump 204 .

[0172] refer to Fig.37 , providing a molding material 212 .

[0173] exist Fig.36 The formed packaging structure is provided with a molding material 212 to protect the packaging structure.

[0174] The molding material 212 can be a combination of one or more materials such as epoxy resin, filler, catalyst, pigment, release agent, flame retardant, coupling agent, hardener, low stress absorber, adhesion promoter, ion trapping agent, etc.

[0175] refer to Fig.38 , the carrier 214 disposed on a surface of the lower substrate 209 is removed.

[0176] refer to Fig.39 ,Will Fig.38 The formed packaging structure is turned over, and solder balls 213 are disposed on the lower surface of the lower substrate 209 .

[0177] Here, the solder ball 213 is a spherical connecting member, the size of the solder ball ranges from 30 μm to 200 μm, and the interval between two solder balls ranges from 50 μm to 400 μm.

[0178] refer to Fig.40 ,right Fig.39The formed packaging structure is cut.

[0179] Although the present application has been described and illustrated with reference to the specific embodiments of the present application, these descriptions and illustrations do not limit the present application. It is clearly understood by those skilled in the art that various changes can be made, and equivalent elements can be substituted in the embodiments without departing from the true spirit and scope of the present application as defined by the appended claims. The illustrations may not necessarily be drawn to scale. Due to variables in the manufacturing process, etc., there may be differences between the technical reproduction in the present application and the actual implementation. There may be other embodiments of the present application that are not specifically described. The description and illustrations should be regarded as illustrative, not restrictive. Modifications may be made to adapt specific circumstances, materials, material compositions, methods or processes to the goals, spirits and scopes of the present application. All such modifications fall within the scope of the appended claims. Although the methods disclosed herein have been described with reference to specific operations performed in a specific order, it should be understood that these operations can be combined, subdivided or reordered to form equivalent methods without departing from the teachings of the present application. Therefore, unless specifically indicated herein, the order and grouping of operations do not limit the present application.

Claims

1. A packaging structure, characterized in that: include: Lower pad; A first bump is disposed on the lower pad, wherein a width of the first bump gradually decreases away from the lower pad; An upper pad, disposed above the lower pad; The second bump is disposed on the upper pad, and the width of the second bump gradually decreases in a direction away from the upper pad, wherein the first bump and the second bump overlap horizontally.

2. The packaging structure according to claim 1, characterized in that: The tip of the first bump horizontally overlaps the second bump.

3. The packaging structure according to claim 2, characterized in that: The vertical center axis of the first protrusion and the vertical center axis of the second protrusion are staggered with each other.

4. The packaging structure according to claim 1, characterized in that: An underfill material is filled between the first bump and the second bump.

5. The packaging structure according to claim 1, characterized in that: An electrical connector is also included. The electrical connector is disposed between the first bump and the second bump and is used to electrically connect the first bump and the second bump.

6. The packaging structure according to claim 2, characterized in that: The tip angle of the first protrusion is an acute angle.

7. The packaging structure according to claim 1, characterized in that: The first bump includes a first convex body, a first seed layer covering the first convex body, and a first metal layer formed on the first seed layer.

8. The packaging structure according to claim 1, characterized in that: The projection of the upper pad falls within the projection range of the lower pad.

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