IGBT power unit and multi-unit IGBT device

Abstract

The utility model discloses an IGBT power unit and a multi-unit IGBT device. The IGBT power unit comprises a heat dissipation plate, a first main conductive sheet, a first conductive strip, a second conductive strip, an IGBT chip, an FRD chip, a first CLIP piece, a second CLIP piece and a third CLIP piece, wherein the first main conductive sheet, the first conductive strip and the second conductive strip are laid on the heat dissipation plate and are sequentially arranged in the left-right direction; the C electrode of the first IGBT chip and the negative electrode of the first FRD chip are welded to the first main conductive sheet, the G electrode of the first IGBT chip is located in the middle or on the left side of the E electrode of the first IGBT chip, the first CLIP piece is welded to the E electrode of the first IGBT chip and the first conductive strip, and the second CLIP piece is welded to the positive electrode of the first FRD chip and the first conductive strip; the third CLIP piece is higher than the first CLIP piece, and the third CLIP piece spans at least part of the area of the first CLIP piece and is welded to the G electrode of the first IGBT chip and the second conductive strip. The IGBT power unit is reasonable in layout and high in space utilization rate.

Description

Technical Field

[0001] The utility model relates to the field of semiconductors, in particular to a multi-unit IGBT power device. Background Art

[0002] IGBT (Insulated Gate Bipolar Transistor), an insulated gate bipolar transistor, is a composite fully controlled voltage-driven power semiconductor device composed of a bipolar junction transistor (BJT) and an insulated gate field effect transistor (MOS). It has the advantages of high input impedance of a metal-oxide-semiconductor field-effect transistor (MOSFET) and low on-state voltage drop of a power transistor (Giant Transistor, GTR). GTR has a low saturation voltage drop and a large current density, but a large drive current; MOSFET has a very small drive power and a fast switching speed, but a large on-state voltage drop and a small current density. IGBT combines the advantages of the above two devices, with low drive power and low saturation voltage drop. It is very suitable for use in converter systems with a DC voltage of 600V and above, such as AC motors, inverters, switching power supplies, lighting circuits, traction drives, and other fields.

[0003] The IGBT module includes an IGBT chip and an FRD diode chip, and the IGBT power module generally welds the IGBT chip and the diode chip on a heat dissipation substrate with a circuit, and then electrically connects the chip electrodes and the corresponding conductive structures on the circuit through bonding wires or bridge components such as CLIP. Due to its limitations, bonding wires are prone to problems such as cold soldering, leaking soldering, and short circuits, so CLIP is often used to replace bonding wires. However, since the E pole and G pole of the IGBT chip are very close, when the E pole and G pole on the IGBT chip are electrically connected, in order to avoid mutual interference of the corresponding bridge components, the corresponding conductive sheets electrically connected to the E pole and G pole on the IGBT chip are often set on two opposite sides of the IGBT chip, and then the E pole and G pole of the IGBT chip are electrically connected from the two opposite sides of the IGBT chip through two CLIP components, or the two CLIP components electrically connecting the E pole and G pole of the IGBT chip are vertically arranged. This arrangement method often has poor space utilization and high layout limitations. For multi-unit IGBT devices, it is often difficult to layout.

[0004] Therefore, there is an urgent need for an IGBT power unit with a reasonable layout and high space utilization. Utility Model Content

[0005] The utility model aims to provide an IGBT power unit and a multi-unit IGBT device with reasonable layout and high space utilization.

[0006] In order to achieve the above-mentioned purpose, the utility model provides an IGBT power unit, including a first conductive sheet group, a first chipset and a first CLIP connector assembly laid on a heat sink, the chips of the first chipset include a plurality of first IGBT chips and a plurality of first FRD chips, the first CLIP connector assembly includes a first CLIP piece corresponding to the first IGBT chips one by one, a second CLIP piece corresponding to the first FRD chip one by one, and a third CLIP piece corresponding to the first IGBT chips one by one, arranged along the left-right direction; the first conductive sheet group includes a first main conductive sheet, a first conductive strip and a second conductive strip, the chips of the first chipset are arranged on the first main conductive sheet at intervals along the front-to-back direction, the The first conductive strip and the second conductive strip are sequentially located on the right side of the first main conductive sheet; the C pole of the first IGBT chip and the negative electrode of the first FRD chip are welded to the first main conductive sheet, the G pole of the first IGBT chip is located in the middle or on the left side of the E pole of the first IGBT chip, the first CLIP component is respectively welded to the E pole of the first IGBT chip and the first conductive strip, and the second CLIP component is respectively welded to the positive electrode of the first FRD chip and the first conductive strip; the height of the third CLIP component is higher than that of the first CLIP component, the third CLIP component spans over at least a partial area of ​​the first CLIP component and is welded to the G pole and the second conductive strip of the first IGBT chip.

[0007] Preferably, when the G pole of the first IGBT chip is located in the middle of the E pole of the first IGBT chip, the first welding piece on which the first CLIP component is welded to the E pole of the first IGBT chip has a hollow area that exposes the G pole of the first IGBT chip, and the third CLIP component is connected across the right half of the first welding piece of the first CLIP component.

[0008] Preferably, when the G pole of the first IGBT chip is located on the left side of the E pole of the first IGBT chip, the third CLIP component is connected across the top of the first CLIP component.

[0009] Preferably, the third CLIP component includes a welding foot extending in the up-down direction and supporting the G pole and the second conductive strip of the first IGBT chip and a first connecting bridge connecting the two welding feet, and the first connecting bridge spans over at least a part of the first CLIP component.

[0010] Preferably, the first IGBT chip and the first FRD chip are alternately arranged on the first main conductive sheet in sequence along the front-to-back direction.

[0011] Preferably, the first CLIP component and the second CLIP component include a first welding portion welded to the electrode of the first chipset, a second welding portion welded to the first conductive strip, and a bending portion connecting the first welding portion and the second welding portion.

[0012] The utility model also provides a multi-unit IGBT device, including a heat sink, and a first IGBT power unit and a second IGBT power unit laid on the heat sink, wherein the first IGBT power unit is the IGBT power unit as described above, and the second IGBT power unit includes a second conductive sheet group, a second chip group, and a second CLIP connector assembly laid on the heat sink.

[0013] Preferably, the second conductive sheet group includes a second main conductive sheet and a third conductive strip laid on the heat sink, the second chip group includes a plurality of second IGBT chips and a plurality of second FRD chips, the second CLIP connector group includes a fourth CLIP component corresponding to the second IGBT chip one by one, a fifth CLIP component corresponding to the second FRD chip one by one, and a sixth CLIP component corresponding to the second IGBT chip one by one; the fourth CLIP component, the fifth CLIP component, and the sixth CLIP component are all arranged in the left-right direction, the second main conductive sheet is located on the left side of the first main conductive sheet, the chips of the second chip group are arranged on the second main conductive sheet at intervals along the front-to-back direction, and the third conductive strip is located on the left side of the first main conductive sheet; the C pole of the second IGBT chip and the negative electrode of the second FRD chip are welded to the second main conductive sheet, the fourth CLIP component is respectively welded to the E pole of the second IGBT chip and the first main conductive sheet, the fifth CLIP component is respectively welded to the positive electrode of the second FRD chip and the first main conductive sheet; the sixth CLIP component is welded to the G pole and the third conductive strip of the second IGBT chip.

[0014] Optionally, the G pole of the second IGBT chip is located in the middle of the E pole of the second IGBT chip, the second welding piece on which the fourth CLIP component is welded to the E pole of the second IGBT chip has a hollow area that exposes the G pole of the second IGBT chip, and the sixth CLIP component is connected across the left half of the second welding piece of the fourth CLIP component.

[0015] Optionally, the G pole of the second IGBT chip is located on the left side of the E pole of the second IGBT chip.

[0016] Preferably, the fourth CLIP component and the fifth CLIP component include a first welding portion welded to the electrode of the second chipset, a second welding portion welded to the first main conductive sheet, and a bending portion connecting the first welding portion and the second welding portion.

[0017] Preferably, the multi-unit IGBT device also includes a shell, a signal terminal and a power terminal, the shell includes a middle frame and a base plate, the first IGBT power unit and the second IGBT power unit are mounted on the base plate and are located in the middle frame; the signal terminal is mounted on the frame structure on the left and right sides of the middle frame, the first conductive sheet group and the second conductive sheet group are located in control signal welding areas that are opposite to each other in the left and right directions, and the end of the signal terminal is directly welded to the control signal welding area or is electrically connected to the control signal welding area through an electrical connector; the power terminal is mounted on the frame structure on the front and rear sides of the middle frame, the first conductive sheet group and the second conductive sheet group are located in power signal welding areas that are opposite to each other in the front and rear directions, and the end of the power terminal is directly welded to the power signal welding area or is electrically connected to the power signal welding area through an electrical connector.

[0018] Compared with the prior art, the first CLIP component and the third CLIP component electrically connecting the G pole and the E pole of the first IGBT chip of the utility model are located on the same side of the first IGBT chip, and the third CLIP component straddles at least a part of the area of ​​the first CLIP component, so that the space utilization rate of the CLIP component electrically connecting the first IGBT chip is high, and the two CLIP components can be arranged on the same side of the first IGBT chip, and the layout is reasonable. Furthermore, when the G pole of the first IGBT chip is located in the middle of the E pole of the first IGBT chip, the first welding piece welded to the E pole of the first IGBT chip has a hollow area that exposes the G pole of the first IGBT chip, and the third CLIP component straddles the right half of the first welding piece of the first CLIP component, so that the area of ​​the corresponding welding piece of the first CLIP component welded to the IGBT chip can be made larger. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a three-dimensional diagram of the IGBT device of the utility model in embodiment 1.

[0020] Figure 2 It is an exploded view of the IGBT device of the utility model in embodiment 1.

[0021] Figure 3 It is an exploded view of the housing of the IGBT device of the utility model in Example 1.

[0022] Figure 4 It is a three-dimensional diagram of the IGBT unit of the utility model in embodiment 1.

[0023] Figure 5 It is a connection structure diagram of the circuit board of the utility model and the interface terminal on the housing in Example 1.

[0024] Figure 6 It is a structural diagram at one angle when the IGBT device of the utility model is not covered.

[0025] Figure 7 It is a structural diagram from another angle when the IGBT device of the utility model is not covered.

[0026] Figure 8 It is a three-dimensional diagram of the circuit board of the utility model.

[0027] Fig. 9 It is a top view of the circuit board of the utility model.

[0028] Fig.10 It is an exploded view of the IGBT unit in Example 1 of the utility model.

[0029] Fig.11 It is a structural diagram at an angle when the IGBT device in Example 2 of the utility model is not covered. DETAILED DESCRIPTION

[0030] In order to explain the technical content, structural features, achieved objectives and effects of the present invention in detail, the following is a detailed description in conjunction with the implementation modes and the accompanying drawings.

[0031] refer to Figure 1 and Figure 2 The present invention discloses an IGBT device 100, comprising a housing 10, an external terminal 40, a circuit board 20 and an IGBT main component welded on the circuit board 20, wherein the IGBT main component comprises a chipset 30, a plurality of CLIP connectors 50 and a temperature sensor 35, and the chipset 30 comprises a plurality of IGBT chips (31, 33) and a plurality of FRD chips (32, 34). The housing 10 comprises an upper cover 13, a middle frame 12 and a bottom plate 11, wherein the middle of the middle frame 12 is a cavity, wherein the external terminals (41, 42) surround the cavity and are clamped on the frame structure of the middle frame 12, wherein the circuit board 20 is mounted on the bottom plate 11, wherein the bottom plate 11 is mounted on the lower side of the middle frame 12 to close the lower opening of the middle frame 12, and wherein the circuit board 20 and the IGBT main component are located in the cavity and have a spacing with the frame structure, and wherein the upper cover 13 covers the upper opening of the middle frame 12.

[0032] The external terminals include a power terminal 41 and a signal terminal 42. The middle of the middle frame 12 is a through cavity and its left-right length is greater than the front-back length. The power terminal 41 is clamped on the frame structure on the front and back sides of the middle frame 12, and the signal terminal 42 is clamped on the frame structure on the left and right sides of the middle frame 12. The power terminal 41 and the signal terminal 42 are both integral structures.

[0033] refer to Figure 8 and Fig. 9 The circuit board 20 includes a heat sink 201 and a conductive sheet 202 laid on the heat sink 201. The conductive sheet 202 is mainly divided into a first conductive sheet group and a second conductive sheet group. The first conductive sheet group includes a first main conductive sheet 21, a first conductive strip 23, and a second conductive strip 24. The second conductive sheet group includes a second main conductive sheet 22, a third conductive strip 25, and a secondary conductive portion 26. In this embodiment, the circuit board 20 is a DBC board, the conductive sheet 202 is a copper sheet, and the heat sink is a ceramic board.

[0034] refer to Figure 5 , Figure 8 and Fig. 9 The conductive sheet 202 is provided with a terminal welding area corresponding to the position of the external terminal 40 in the left-right direction or the front-back direction, and the external terminal 40 is welded to the corresponding terminal welding area. The terminal welding area includes a control signal welding area a and a power signal welding area b.

[0035] refer to Figure 2 and Fig.10 The chipset 30 includes a first chipset and a second chipset. The chips of the first chipset include a plurality of first IGBT chips 31 and a plurality of first FRD chips 32, and the second chipset includes a plurality of second IGBT chips 33 and a plurality of second FRD chips 34. The plurality of CLIP connectors 50 are divided into two groups: a first CLIP connector assembly and a second CLIP connector assembly.

[0036] In this embodiment, there are three first IGBT chips 31 , three first FRD chips 32 , three second IGBT chips 33 and three second FRD chips 34 .

[0037] refer to Figure 2 and Figure 4 Two IGBT power units consisting of conductive sheets, chipsets and CLIP connectors 50 are formed on the heat sink 201: a first IGBT power unit and a second IGBT power unit. The first IGBT power unit consists of a first conductive sheet group, a first chipset and a first CLIP connector assembly, and the second IGBT power unit consists of a second conductive sheet group, a second chipset and a second CLIP connector assembly.

[0038] refer to Figure 2 , Figure 4 , Figure 8 and Fig. 9 In the first IGBT power unit, a plurality of chip welding areas ( Figure 8 and Fig. 9 The chip welding area includes a plurality of IGBT chip welding areas for welding the first IGBT chip 31 and a plurality of FRD chip welding areas for welding the first FRD chip 32. All chips of the first chipset are arranged on the first main conductive sheet 21 at intervals along the front-to-back direction.

[0039] refer to Figure 4 , the IGBT chip welding area and the FRD chip welding area on the first main conductive sheet 21 are staggered, so that the first IGBT chip 31 and the first FRD chip 32 are staggered in sequence along the front-to-back direction on the first main conductive sheet 21. In this embodiment, the first IGBT chip 31 and the first FRD chip 32 are staggered, and the rapid recovery capability is strong.

[0040] refer to Figure 4 and Fig.10 , the first conductive strip 23 and the second conductive strip 24 are sequentially located on the right side of the first main conductive sheet 21. The first CLIP connection assembly includes a first CLIP component 51 arranged along the left-right direction and corresponding to the first IGBT chip 31, a second CLIP component 52 arranged along the left-right direction and corresponding to the first FRD chip 32, and a third CLIP component 53 arranged along the left-right direction and corresponding to the first IGBT chip 31.

[0041] refer to Figure 4 and Fig.10 , the C pole of the first IGBT chip 31 and the negative electrode of the first FRD chip 32 are welded to the first main conductive sheet 21, the G pole of the first IGBT chip 31 is located on the left side of the E pole of the first IGBT chip 31, the first CLIP component 51 is welded to the E pole of the first IGBT chip 31 and the first conductive strip 23 respectively, and the second CLIP component 52 is welded to the positive electrode of the first FRD chip 32 and the first conductive strip 23 respectively; the height of the third CLIP component 53 is higher than the first CLIP component 51, and the third CLIP component 53 straddles the first CLIP component 51 and is welded to the G pole of the first IGBT chip 31 and the second conductive strip 24.

[0042] refer to Figure 8 and Fig. 9The first conductive strip 23 is formed with a main signal welding area ( Figure 8 , Fig. 9 A signal terminal 42 is welded to the control signal welding area a on the first conductive strip 23 to transmit the E-pole control signal of the first IGBT power unit. The first CLIP component 51 and the second CLIP component 52 are welded to the corresponding electrodes on the first chipset and the main signal welding area of ​​the first conductive strip 23. The second conductive strip 24 is formed with a G-pole signal welding area ( Figure 8 , Fig. 9 A signal terminal 42 is welded to the control signal welding area a on the second conductive strip 24 to transmit the G-pole control signal of the first IGBT power unit, and the third CLIP part 53 is welded to the G-pole of the first IGBT chip 31 and the G-pole signal welding area of ​​the second welding strip 24.

[0043] refer to Figures 8 to 10 The first conductive strip 23 is provided with a plurality of main signal welding areas which are opposite to each chip welding area in the left-right direction. The second CLIP piece 52 is arranged along the left-right direction and corresponds to the first FRD chip 32 one by one, and its two ends are respectively welded to the positive electrode of the first FRD chip 32 and the main signal welding area of ​​the first conductive strip 23. The first CLIP piece 51 is arranged along the left-right direction and corresponds to the first IGBT chip 31 one by one, and its two ends are respectively welded to the E pole of the first IGBT chip 31 and the main signal welding area of ​​the first conductive strip 23.

[0044] refer to Figures 8 to 10 The second conductive strip 24 is provided with a plurality of G-pole signal welding areas which are opposite to each of the IGBT chip welding areas on the first main conductive strip 21 in the left-right direction. The third CLIP piece 53 is arranged along the left-right direction and corresponds to the first IGBT chip 31 one by one, and its two ends are respectively welded to the G-pole of the first IGBT chip 31 and the G-pole signal welding area on the second conductive strip 24.

[0045] refer to Figure 4 and Fig.10 The first CLIP part 51 includes a first welding portion welded to the E pole of the first IGBT chip 31, a second welding portion welded to the main signal welding area at the corresponding position of the first conductive strip, and a bending portion connecting the first welding portion and the second welding portion. The bending portion is in a shape such as a "J" shape, a U shape, or an arch shape.

[0046] refer to Figure 4 and Fig.10 The second CLIP part 52 includes a first welding portion welded to the positive electrode of the first FRD chip 32, a second welding portion welded to the main signal welding area at a position corresponding to the first conductive strip 23, and a bending portion connecting the first welding portion and the second welding portion. The bending portion is in a shape such as a "J" shape, a U shape, or an arch shape.

[0047] refer to Figure 4 and Fig.10 The third CLIP component 53 includes a welding foot extending in the up-down direction and supporting the G pole of the first IGBT chip 31 and the second conductive strip 24 and a first connecting bridge connecting the two welding feet. The height of the first connecting bridge is higher than the height of the bending portion of the first CLIP component 51, and the first connecting bridge spans all areas of the first CLIP component 51 in the left-right direction.

[0048] refer to Figure 5 , Figure 8 and Fig. 9 The first main conductive sheet 21 extends to the front side and then bends and extends to the front side of the second main conductive sheet 22 to form a third conductive portion 63 having a power signal welding area b. A power terminal 41 is welded to the power signal welding area b of the third conductive portion 63 to transmit the electrical signal between the two IGBT power units. Specifically, the left end of the third conductive portion 63 extends to the corresponding position of the secondary conductive portion 26, and the right end extends to the corresponding position of the first conductive strip 23. The third conductive portion 63 has two power signal welding areas b arranged at intervals in the left-right direction. The two power terminals 41 are welded to the power signal welding area b of the third conductive portion 63 to transmit the electrical signal between the two IGBT power units.

[0049] refer to Figure 2 , Figure 4 , Figure 8 and Fig. 9 In the second IGBT power unit, a plurality of chip welding areas (the second main conductive sheet 22) are formed on the second main conductive sheet 22 and are arranged at intervals in the front-to-back direction. Figure 8 and Fig. 9 The chip welding area includes a plurality of IGBT chip welding areas for welding the second IGBT chip 33 and a plurality of FRD chip welding areas for welding the second FRD chip 34. The chips of the second chip group are arranged on the second main conductive sheet 22 at intervals along the front-to-back direction.

[0050] refer to Figure 4, the IGBT chip welding area and the FRD chip welding area on the second main conductive sheet 22 are staggered, so that the second IGBT chip 33 and the second FRD chip 34 are staggered in sequence along the front-to-back direction on the second main conductive sheet 22. In this embodiment, the second IGBT chip 33 and the second FRD chip 34 are staggered, and the rapid recovery capability is strong.

[0051] refer to Figure 4 and Fig.10 , the first main conductive sheet 21 is arranged at a distance to the right of the second main conductive sheet 22, and the third conductive strip 25 is longitudinally laid along the front-to-back direction and arranged on the left of the second main conductive sheet 22. A notch 251 for accommodating the secondary conductive portion 26 is formed at the left front corner or the right front corner of the third conductive strip 25, and the secondary conductive portion 26 is located in the notch 251 and is integrally connected to the third conductive portion 63 through the front side of the notch 251. The second CLIP connector assembly includes a fourth CLIP component 54 corresponding to the second IGBT chip 33, a fifth CLIP component 55 corresponding to the second FRD chip 34, and a sixth CLIP component 56 corresponding to the second IGBT chip 33.

[0052] In this embodiment, the third conductive strip 25 is in a straight strip shape with a notch 251. Of course, different from this, the third conductive strip 25 is in a bent shape (Z-shaped) with a notch 251, and the entire third conductive strip 25 is arranged with a uniform width. In this case, the left front corner of the second main conductive sheet 22 has a notch for accommodating the third conductive strip 25.

[0053] refer to Figure 4 , Figure 8 , Fig. 9 and Fig.10 The second main conductive sheet 22 extends backward to form a first conductive portion 61 having a power signal welding area b, and a power terminal 41 is welded to the power signal welding area b of the first conductive portion 61 to transmit the C-pole electrical signal of the second IGBT power unit; the rear end of the first conductive strip is bent and extended toward the rear side of the first main conductive sheet 21 to form a second conductive portion 62 having a power signal welding area b, and a power terminal is welded to the power signal welding area b of the second conductive portion 62 to transmit the E-pole signal of the first IGBT power unit. A control signal welding area a is formed at the left front corner of the second main conductive sheet 22, and a signal terminal 42 is welded to the control signal welding area a of the second main conductive sheet 22 to transmit the C-pole signal of the second IGBT power unit.

[0054] refer to Figure 4 and Fig.10, the C pole of the second IGBT chip 33 and the negative electrode of the second FRD chip 34 are welded to the second main conductive sheet 22, the fourth CLIP piece 54 is welded to the E pole of the second IGBT chip 33 and the first main conductive sheet 21, the fifth CLIP piece 55 is welded to the positive electrode of the second FRD chip 34 and the first main conductive sheet 21, and the sixth CLIP piece 56 is welded to the G pole of the second IGBT chip 33 and the auxiliary conductive portion 26. The G pole of the second IGBT chip 33 is located on the left side of the E pole of the second IGBT chip 33.

[0055] refer to Figure 4 , Figure 8 and Fig. 9 The third conductive strip 25 is formed with a G-pole signal welding area and a control signal welding area a for electrically connecting the G-pole of the second IGBT chip 33. A signal terminal 42 is welded to the control signal welding area a on the third conductive strip 25 to transmit the G-pole control signal of the second IGBT power unit. The sixth CLIP piece 56 is welded to the G-pole of the second IGBT chip 33 and the G-pole signal welding area of ​​the third conductive strip 25. The secondary conductive portion 26 is disposed on the left side of the second main conductive sheet 22 and is integrally connected to the first main conductive sheet 21. A control signal welding area a is formed on the secondary conductive portion 26. A signal terminal 42 is welded to the control signal welding area a on the secondary conductive portion 26 to transmit the E-pole control signal of the second IGBT power unit.

[0056] refer to Figure 4 , Figure 8 and Fig. 9 The third conductive strip 25 is provided with a plurality of G-pole signal welding areas ( Figure 8 , Fig. 9 A signal terminal 42 is welded to the control signal welding area a of the third conductive strip 25 to transmit the G-pole control signal of the second IGBT power unit.

[0057] refer to Figure 4 The sixth CLIP piece 56 is arranged along the left-right direction and corresponds to the second IGBT chip 33 one by one, and its two ends are respectively welded to the G pole of the second IGBT chip 33 and the G pole signal welding area on the third conductive strip 25.

[0058] refer to Figure 8 and Fig. 9 The first main conductive sheet 21 is provided with a plurality of main signal welding areas ( Figure 8 , Fig. 9 The elongated dashed-line frame on the first main conductive sheet 21 in FIG.

[0059] refer to Figure 4 and Figure 8 The fifth CLIP piece 55 is arranged along the left-right direction and corresponds to the second FRD chip 34 one by one, and its two ends are respectively welded to the positive electrode of the second FRD chip 34 and the main signal welding area of ​​the first main conductive sheet 21. The fourth CLIP piece 54 is arranged along the left-right direction and corresponds to the second IGBT chip 33 one by one, and its two ends are respectively welded to the E pole of the second IGBT chip 33 and the main signal welding area of ​​the first main conductive sheet 21.

[0060] refer to Figure 4 and Fig.10 The fourth CLIP part 54 includes a first welding portion welded to the E pole of the second IGBT chip 33, a second welding portion welded to the main signal welding area at a position corresponding to the first main conductive sheet 21, and a bending portion connecting the first welding portion and the second welding portion. The bending portion is in a shape such as a "J" shape, a U shape, or an arch shape.

[0061] refer to Figure 4 and Fig.10 The fifth CLIP part 55 includes a first welding portion welded to the positive electrode of the second FRD chip 34, a second welding portion welded to the main signal welding area at a corresponding position of the first main conductive sheet 21, and a bending portion connecting the first welding portion and the second welding portion. The bending portion is in a shape of "J", U or arch.

[0062] refer to Figure 4 and Fig.10 The sixth CLIP component 56 includes a welding foot extending in the up-down direction and supporting the welding on the G pole of the second IGBT chip 33 and the third conductive strip 25 and a first connecting bridge connecting the two welding feet.

[0063] refer to Figure 4 and Fig.10 In the first chip group, the first IGBT chip 31 and the first FRD chip 32 are arranged alternately in the front-to-back direction, and in the second chip group, the second IGBT chip 33 and the second FRD chip 34 are arranged alternately in the front-to-back direction. Of course, all the first IGBT chips 31 can be arranged continuously together, all the first FRD chips 32 can be arranged continuously together, all the second IGBT chips 33 can be arranged continuously together, and all the second FRD chips 34 can be arranged continuously together.

[0064] refer to Figure 4 and Fig.10In order to further dissipate heat, all the first IGBT chips 31 of the first chipset and all the second IGBT chips 33 of the second chipset are staggered, and all the first FRD chips 32 of the first chipset and all the second FRD chips 34 of the second chipset are staggered. Specifically, in order to save space, the first IGBT chips 31 of the first chipset and the second FRD chips 34 of the second chipset are opposite in the left-right direction, and the first FRD chips 32 of the first chipset and the second IGBT chips 33 of the second chipset are opposite in the left-right direction. Of course, the chips of the first chipset and the second chipset may not be opposite, but may be all staggered or partially staggered.

[0065] Of course, it is not limited to this. Fig.11 The first IGBT chip 31 in the first chipset may be positioned opposite to the second IGBT chip 33 in the second chipset in the left-right direction, and the first FRD chip 32 in the first chipset may be positioned opposite to the second FRD chip 34 in the second chipset in the left-right direction.

[0066] refer to Figure 4 and Fig.10 The rear end of the third conductive strip 25 has a temperature sensor installation area, and the conductive sheet includes two temperature-sensitive conductive sheets laid on the temperature sensor installation area. The two temperature-sensitive conductive sheets 27 are respectively formed with electrode welding areas for welding temperature-sensing terminal electrodes and control signal welding areas a for welding temperature signal terminals 42. The two temperature-sensing terminal electrodes of the temperature sensor 35 are welded to the electrode welding areas of the two temperature-sensing conductive sheets 27, and the two signal terminals 42 are welded to the control signal welding areas a of the two temperature-sensing conductive sheets (reference Figure 8 and Fig. 9 ).

[0067] refer to Figures 5 to 7 The upper end of the external terminal 40 is formed with an interface 401 exposed on the frame structure, and the lower end of the external terminal 40 extends to the conductive sheet 202 on the circuit board 20 to form a welding portion, and the welding portion is directly welded to the conductive sheet 202.

[0068] refer to Figures 5 to 7 The lower end of the power terminal 41 extends downward to the corresponding position of the circuit board 20 and then extends toward the cavity to the terminal welding area to form a welding portion 411. The lower end of the signal terminal 42 extends toward the cavity to the upper side of the corresponding terminal welding area and then bends downward to extend to the corresponding terminal welding area to form a welding portion 421.

[0069] Embodiment 2:

[0070] refer to Fig.11, which is different from the embodiment, is that the G pole of the first IGBT chip 31 is located in the middle of the E pole of the first IGBT chip 31, the first CLIP component 51a has a first welding piece 511 welded to the E pole of the first IGBT chip 31, the first welding piece 511 has a hollow area exposing the G pole of the first IGBT chip 31, and the third CLIP component 53 is connected across the top of the right half of the first welding piece 511 of the first CLIP component 51a.

[0071] The G pole of the second IGBT chip 33 is located in the middle of the E pole of the second IGBT chip 33, the fourth CLIP component 54a has a second welding piece 541 welded to the E pole of the first IGBT chip 31, the second welding piece 541 has a hollow area exposing the G pole of the second IGBT chip 33, and the sixth CLIP component is connected across the upper left half of the second welding piece 541.

[0072] In this patent, all left and right, front and back, up and down are relative positions that are perpendicular to each other.

[0073] The above disclosure is only the preferred embodiment of the present invention, which certainly cannot be used to limit the scope of rights of the present invention. Therefore, equivalent changes made according to the scope of the patent application of the present invention are still within the scope covered by the present invention.

Claims

1. An IGBT power unit, comprising a first conductive sheet group, a first chipset group and a first CLIP connector assembly laid on a heat sink, characterized in that: The chips of the first chipset include a plurality of first IGBT chips and a plurality of first FRD chips. The first CLIP connector assembly includes a first CLIP component corresponding to the first IGBT chip one by one, a second CLIP component corresponding to the first FRD chip one by one, and a third CLIP component corresponding to the first IGBT chip one by one, which are arranged in the left-right direction; The first conductive sheet group includes a first main conductive sheet, a first conductive strip, and a second conductive strip. The chips of the first chip group are arranged on the first main conductive sheet at intervals along the front-to-back direction. The first conductive strip and the second conductive strip are sequentially located on the right side of the first main conductive sheet. The C pole of the first IGBT chip and the negative electrode of the first FRD chip are welded to the first main conductive sheet, the G pole of the first IGBT chip is located in the middle or on the left side of the E pole of the first IGBT chip, the first CLIP component is welded to the E pole of the first IGBT chip and the first conductive strip, respectively, and the second CLIP component is welded to the positive electrode of the first FRD chip and the first conductive strip, respectively; the height of the third CLIP component is higher than that of the first CLIP component, and the third CLIP component spans over at least a partial area of ​​the first CLIP component and is welded to the G pole and the second conductive strip of the first IGBT chip.

2. The IGBT power unit according to claim 1, characterized in that: When the G pole of the first IGBT chip is located in the middle of the E pole of the first IGBT chip, the first welding piece on which the first CLIP component is welded to the E pole of the first IGBT chip has a hollow area that exposes the G pole of the first IGBT chip, and the third CLIP component is connected across the right half of the first welding piece of the first CLIP component.

3. The IGBT power unit according to claim 1, characterized in that: When the G pole of the first IGBT chip is located on the left side of the E pole of the first IGBT chip, the third CLIP component is connected across the top of the first CLIP component.

4. The IGBT power unit according to claim 1, characterized in that: The third CLIP component includes a welding foot extending in the up-down direction and supporting the G pole of the first IGBT chip and the second conductive strip and a first connecting bridge connecting the two welding feet, and the first connecting bridge spans over at least a part of the first CLIP component.

5. The IGBT power unit according to claim 1, characterized in that: The first IGBT chip and the first FRD chip are alternately arranged on the first main conductive sheet in sequence along the front-to-back direction.

6. The IGBT power unit according to claim 1, characterized in that: The first CLIP component and the second CLIP component include a first welding portion welded to the electrode of the first chipset, a second welding portion welded to the first conductive strip, and a bending portion connecting the first welding portion and the second welding portion.

7. A multi-unit IGBT device, characterized in that: It includes a heat sink, and a first IGBT power unit and a second IGBT power unit laid on the heat sink, the first IGBT power unit is the IGBT power unit as described in any one of claims 1 to 6, and the second IGBT power unit includes a second conductive sheet group, a second chip group, and a second CLIP connector assembly laid on the heat sink.

8. The multi-unit IGBT device according to claim 7, wherein: The second conductive sheet group includes a second main conductive sheet and a third conductive strip laid on the heat dissipation plate, the second chip group includes a plurality of second IGBT chips and a plurality of second FRD chips, and the second CLIP connector group includes a fourth CLIP component corresponding to the second IGBT chip one by one, a fifth CLIP component corresponding to the second FRD chip one by one, and a sixth CLIP component corresponding to the second IGBT chip one by one; The fourth CLIP component, the fifth CLIP component, and the sixth CLIP component are all arranged along the left-right direction, the second main conductive sheet is located on the left side of the first main conductive sheet, the chips of the second chipset are arranged on the second main conductive sheet at intervals along the front-back direction, and the third conductive strip is located on the left side of the first main conductive sheet; The C pole of the second IGBT chip and the negative electrode of the second FRD chip are welded to the second main conductive sheet, the fourth CLIP component is welded to the E pole of the second IGBT chip and the first main conductive sheet, the fifth CLIP component is welded to the positive electrode of the second FRD chip and the first main conductive sheet, and the sixth CLIP component is welded to the G pole of the second IGBT chip and the third conductive strip.

9. The multi-unit IGBT device according to claim 8, wherein: The G pole of the second IGBT chip is located in the middle of the E pole of the second IGBT chip, the second welding piece on which the fourth CLIP component is welded to the E pole of the second IGBT chip has a hollow area for exposing the G pole of the second IGBT chip, and the sixth CLIP component is connected across the left half of the second welding piece of the fourth CLIP component; or The G pole of the second IGBT chip is located on the left side of the E pole of the second IGBT chip.

10. The multi-unit IGBT device according to claim 7, wherein: It also includes a housing, a signal terminal and a power terminal, the housing includes a middle frame and a bottom plate, the first IGBT power unit and the second IGBT power unit are mounted on the bottom plate and are located in the middle frame; The signal terminals are mounted on the frame structures on the left and right sides of the middle frame, the first conductive sheet group and the second conductive sheet group are located in opposite control signal welding areas in the left and right directions, and the ends of the signal terminals are directly welded to the control signal welding areas or electrically connected to the control signal welding areas through electrical connectors; The power terminal is installed on the frame structure on the front and rear sides of the middle frame. The first conductive sheet group and the second conductive sheet group are located at power signal welding areas opposite to each other in the front and rear directions. The end of the power terminal is directly welded to the power signal welding area or electrically connected to the power signal welding area through an electrical connector.

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