Laser module and laser equipment
By designing a laser module containing a total internal reflective light guide plate, the complex and cost-effective optical path shaping structure of the VCSEL laser is solved, and the uniformity and cost reduction of the laser beam are achieved.
Patent Information
- Application Number
- CN202421652235.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-12
- Publication Date
- 2025-04-08
- Estimated Expiration
- 2034-07-12
AI Technical Summary
The optical path shaping structure of the existing VCSEL laser is complex, which leads to high production costs and is difficult to meet the needs of beam shaping and homogenization in practical applications.
A laser module is designed, including a substrate, a laser chip array and a light shaping element. The projection of the light shaping element completely covers the luminous area of the laser chip array, and light homogenization is achieved through a totally internally reflected light guide plate (such as a quartz light guide plate and a sapphire light guide plate).
The uniformity of the laser beam is achieved, reducing the structural complexity and production cost of the laser module, and improving the uniformity of the beam.
Smart Images
Figure CN222735567U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of semiconductor lasers, and in particular to a laser module and a laser device. Background Art
[0002] Vertical-Cavity Surface-Emitting Laser (VCSEL) is a semiconductor laser that forms a resonant cavity in the vertical direction of the substrate and emits laser in the vertical direction. VCSEL has the advantages of small size, good single-mode characteristics, low threshold current, circular spot output, low price, and easy integration into large-area arrays. It has been widely used in optical communications, lighting, and sensing.
[0003] Since the divergence angle of the common high-power VCSEL lasers on the market is often around 24°, the output beam needs to be shaped and homogenized before it can be put into practical application. However, the existing beam shaping and homogenization structure is complex and the manufacturing cost is high. Therefore, how to simplify the VCSEL laser optical path shaping structure and reduce its manufacturing cost has become a problem that needs to be solved urgently. Summary of the invention
[0004] Based on this, it is necessary to provide a laser module and laser equipment to address the problems of complex optical path shaping structure and high production cost of traditional VCSEL lasers.
[0005] A laser module comprises: a substrate, a laser chip array arranged on the substrate, and a light shaping element arranged in front of a surface of the laser chip array away from the substrate, wherein the projection of the light shaping element on the substrate completely covers the light emitting area of the laser chip array.
[0006] By making the projection of the light shaping element on the substrate completely cover the light emitting area of the laser chip array, the light shaping element can fully capture the light of the laser chip array, and the laser emitted by the laser chip is homogenized into a uniform light spot by the light shaping element before being emitted. In addition, the above laser module has a simple structure and low installation cost.
[0007] In one embodiment, the light shaping element is a rectangular parallelepiped. With such a configuration, the light shaping element has a simple structure, is easy to manufacture, and has a low configuration cost.
[0008] In one embodiment, the inner wall of the light shaping element is totally reflected. Light is effectively transmitted inside the light shaping element by total internal reflection. The more times the light is reflected inside the light shaping element, the better the light homogenization effect is. Multiple reflections form a two-dimensional virtual light source matrix, thereby making the light more uniform.
[0009] In one embodiment, the light shaping element comprises a quartz light guide plate and / or a sapphire light guide plate with total reflection on the inner wall. Such an arrangement can reduce the installation cost of the light shaping element while satisfying the light homogenization effect.
[0010] In one embodiment, the light shaping element is a quartz light guide plate with total reflection on the inner wall, and the distance between the surface of the quartz light guide plate facing the laser chip array and the surface facing away from the laser chip array is T1, 30mm≤T1≤60mm. If it is less than 30mm, the light cannot be fully reflected in the quartz light guide plate, so that the light homogenization effect cannot meet the requirements; if it is more than 60mm, it will affect the light extraction efficiency.
[0011] In one embodiment, the light shaping element is a sapphire light guide plate with total reflection on the inner wall, and the distance between the surface of the sapphire light guide plate facing the laser chip array and the surface facing away from the laser chip array is T2, 5mm≤T2≤50mm. If it is less than 5mm, the light cannot be fully reflected in the sapphire light guide plate, so that the light homogenization effect cannot meet the requirements; if it is more than 50mm, it will affect the light extraction efficiency.
[0012] In one embodiment, the light shaping element is a quartz light guide plate and a sapphire light guide plate with total inner wall reflection, and the distance between the surface of the quartz light guide plate facing the laser chip array and the surface facing away from the laser chip array is T1, 30mm≤T1≤40mm; the distance between the surface of the sapphire light guide plate facing the laser chip array and the surface facing away from the laser chip array is T2, 5mm≤T2≤20mm. If T1 is lower than 30mm and T2 is lower than 5mm, the light cannot be fully reflected in the quartz light guide plate and the sapphire light guide plate, so that the light homogenization effect cannot meet the requirements; if T1 is higher than 40mm and T2 is higher than 20mm, the light extraction efficiency will be affected.
[0013] In one embodiment, an optical anti-reflection film is evaporated on the surface of the light shaping element facing the laser chip array, so that more light can enter the light shaping element after exiting the laser chip array.
[0014] In one embodiment, an optical anti-reflection film is evaporated on the surface of the quartz light guide plate facing the laser chip array, the surface of the quartz light guide plate facing away from the laser chip array, and the surface of the sapphire light guide plate facing the laser chip array. This arrangement is conducive to more light coming out of the laser chip array and entering the light shaping element.
[0015] A laser device comprises a housing and a laser module as described in any one of the above embodiments, wherein the laser module is arranged in the housing. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] Figure 1 This is a schematic diagram of the arrangement of multiple laser chips in a laser chip array.
[0017] Figure 2 Schematic diagram of the optical path structure of the unhomogenized laser chip array.
[0018] FIG. 3 is a diagram showing the illumination distribution of an unhomogenized laser chip array.
[0019] Figure 4 It is a schematic structural diagram of the laser module in the first embodiment of the utility model.
[0020] Figure 5 for Figure 4 Schematic diagram of the optical path structure of the laser module shown.
[0021] Figure 6 Figure 4 The illumination distribution diagram of the laser module shown.
[0022] Figure 7 It is a schematic structural diagram of the laser module in the second embodiment of the utility model.
[0023] Figure 8 for Figure 7 Schematic diagram of the optical path structure of the laser module shown.
[0024] Figure 9 Figure 7 The illumination distribution diagram of the laser module shown.
[0025] Fig.10 Schematic diagram of the structure of the laser module in the third embodiment of the present utility model.
[0026] Fig.11 for Fig.10 Schematic diagram of the optical path structure of the laser module shown.
[0027] Figure 12 Fig.10 The illumination distribution diagram of the laser module shown.
[0028] Reference numerals:
[0029] 1. Laser chip array; 10. Laser chip; 11. Gold wire; 12. Cathode; 13. Anode; 2. Light shaping element; 21. Quartz light guide plate; 22. Sapphire light guide plate; 3. Substrate. DETAILED DESCRIPTION
[0030] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.
[0031] In the description of the present application, it should be understood that if the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. appear, the orientation or position relationship indicated by these terms is based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.
[0032] In addition, if the terms "first" or "second" appear, these terms are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of this application, if the term "plurality" appears, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.
[0033] In this application, unless otherwise clearly specified and limited, if the terms "installed", "connected", "connected", "fixed" and the like appear, these terms should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integrated connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances.
[0034] In the present application, unless otherwise clearly specified and limited, if there is a description that a first feature is "above" or "below" a second feature, etc., or similar descriptions appear, it may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "above" and "above" the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. The first feature being "below", "below" and "below" the second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.
[0035] It should be noted that if an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. If an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. If any, the terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used in this application are for illustrative purposes only and do not represent the only implementation method.
[0036] Figure 1 Schematic diagram of the arrangement of multiple laser chips 10 in the laser chip array 1. Nine laser chips 10 are arranged horizontally and three are arranged vertically. The horizontal spacing between the laser chips 10 is 3.25 mm and the vertical spacing is 2.5 mm. The power of a single laser chip 10 is 4 watts, and the total power of the laser chip array 1 is 108 watts. Figure 2 As shown in Figure 3, without the light shaping element 2, the spot size of the light outlet is 29mm*7mm, and the maximum incoherent irradiance in the horizontal direction is 216w / cm 2 , the minimum incoherent irradiance in the horizontal direction is 1.6w / cm 2 , the maximum incoherent irradiance in the vertical direction is 216w / cm 2 , the minimum incoherent irradiance in the vertical direction is 1.6w / cm 2 According to the uniformity calculation formula (uniformity = 1-(I MAX -I MIN ) / ( I MAX +I MIN ), where I is the incoherent irradiance), the uniformity in the horizontal direction is 1.5%, and the uniformity in the vertical direction is 1.5%. It can be seen from the calculation that the uniformity of the laser chip array 1 that has not been homogenized is very poor.
[0037] In order to solve the above problems, the present application provides a laser module and a laser device. Embodiment 1
[0038] See also Figure 4As shown in FIG6 , the laser module provided by the present application includes a substrate 3, a laser chip array 1 disposed on the substrate 3, and a sapphire light guide plate 22 disposed in front of the surface of the laser chip array 1 away from the substrate 3, wherein the projection of the sapphire light guide plate 22 on the substrate 3 completely covers the light emitting area of the laser chip array 1. With such a configuration, the sapphire light guide plate 22 can fully capture the light of the laser chip array 1, and the laser emitted by the laser chip array 1 is homogenized into a uniform light spot by the sapphire light guide plate 22 and then emitted. In addition, the above-mentioned laser module has a simple structure and low configuration cost.
[0039] The sapphire light guide plate 22 is a rectangular parallelepiped, including a light inlet surface and a light outlet surface which are arranged on both sides of the sapphire light guide plate 22 and are rectangular, and the light inlet surface and the light outlet surface are parallel and have the same size. The inner wall of the sapphire light guide plate 22 is a smooth surface, that is, the inner wall of the sapphire light guide plate 22 is totally reflected. The light is effectively transmitted inside the sapphire light guide plate 22 by total internal reflection. The more times the light is reflected in the sapphire light guide plate 22, the better the light homogenization effect is. Multiple reflections form a two-dimensional virtual light source matrix, making the light more uniform. The light of the laser chip array 1 enters from the light inlet surface, and the light is repeatedly reflected in the sapphire light guide plate 22. After being homogenized into a uniform light spot, it is emitted from the light outlet surface. In order to improve the light transmission efficiency of the sapphire light guide plate 22, an optical anti-reflection film can be evaporated on the incident surface of the sapphire light guide plate 22. The vertical distance between the light-incoming surface and the light-outgoing surface of the sapphire light guide plate 22 is T2 (i.e., the height of the sapphire light guide plate 22), 5mm≤T2≤50mm. If it is less than 5mm, the light cannot be fully reflected in the sapphire light guide plate 22, so that the light homogenization effect cannot meet the requirements; if it is higher than 50mm, it will affect the light extraction efficiency.
[0040] In this embodiment, the size of the sapphire light guide plate 22 is set to be 30 mm long, 10 mm wide, and 6 mm high. Figure 1 As shown in the figure, the arrangement of the laser chip array 1 is to arrange 9 laser chips 10 horizontally and 3 vertically, the horizontal spacing between the laser chips 10 is 3.25mm, the vertical spacing is 2.5mm, the power of a single laser chip 10 is 4 watts, and the total power of the laser chip array 1 is 108 watts. The spot size is 30mm*9mm, the uniformity in the horizontal direction is 39%, and the uniformity in the vertical direction is 11% (the maximum incoherent irradiance in the horizontal direction is 41w / cm 2 , the minimum incoherent irradiance in the horizontal direction is 10w / cm 2 , the maximum incoherent irradiance in the vertical direction is 42.4w / cm 2 , the minimum incoherent irradiance in the vertical direction is 2.4w / cm 2 ) to achieve uniform light effect.
[0041] The laser module of this embodiment achieves a good light uniformity effect through the cooperation of the laser chip array and the sapphire light guide plate, and has a simple structure and low installation cost. Embodiment 2
[0042] See also Figure 7 As shown in FIG. 9 , the present application provides a laser module. The difference between this embodiment and the above embodiment is that the sapphire light guide plate 22 in the first embodiment is replaced by a quartz light guide plate 21. In addition, the vertical distance between the light-incoming surface and the light-outgoing surface of the quartz light guide plate 21 is T1 (i.e., the height of the quartz light guide plate 21), and 30 mm ≤ T1 ≤ 60 mm. In this embodiment, the size of the quartz light guide plate 21 is set to 30 mm in length, 10 mm in width, and 40 mm in height.
[0043] The light spot is 32mm*11mm, the horizontal uniformity is 96%, and the vertical uniformity is 92% (the maximum incoherent irradiance in the horizontal direction is 15.7w / cm 2 , the minimum incoherent irradiance in the horizontal direction is 14.5w / cm 2 , the maximum incoherent irradiance in the vertical direction is 18.3w / cm 2 , the minimum incoherent irradiance in the vertical direction is 15.65w / cm 2 ) to achieve uniform light effect.
[0044] The laser module of this embodiment achieves a good light homogenization effect through the cooperation of the laser chip array and the quartz light guide plate, and has a simple structure and low installation cost. Embodiment 3
[0045] See also Figure 10 to Figure 1 2. The present application provides a laser module. In this embodiment, based on the second embodiment, a sapphire light guide plate 22 is arranged on the light emitting surface of the quartz light guide plate 21. In addition, in order to improve the light transmission efficiency of the quartz light guide plate 21 and the sapphire light guide plate 22, the incident surface of the quartz light guide plate 21, the exit surface of the quartz light guide plate 21 and the incident surface of the sapphire light guide plate 22 can be evaporated with an optical anti-reflection film. The vertical distance from the light incident surface to the light emitting surface of the quartz light guide plate 21 is T1 (i.e., the height of the quartz light guide plate 21), 30mm≤T1≤40mm. The vertical distance from the light incident surface to the light emitting surface of the sapphire light guide plate 22 is T2 (i.e., the height of the sapphire light guide plate 22), 5mm≤T2≤20mm. In this embodiment, the size of the quartz light guide plate 21 is set to be 30 mm in length, 10 mm in width, and 30 mm in height, and the size of the sapphire light guide plate 22 is set to be 32 mm in length, 12 mm in width, and 6 mm in height.
[0046] The light spot is 32mm*12mm, the horizontal uniformity is 96%, and the vertical uniformity is 99% (the maximum incoherent irradiance in the horizontal direction is 14.6w / cm 2 , the minimum incoherent irradiance in the horizontal direction is 13.45w / cm 2 , the maximum incoherent irradiance in the vertical direction is 14.6w / cm 2 , the minimum incoherent irradiance in the vertical direction is 14.3w / cm 2 ) to achieve uniform light effect.
[0047] The laser module of this embodiment achieves a good light uniformity effect through the cooperation of the laser chip array with the quartz light guide plate and the sapphire light guide plate, and has a simple structure and low installation cost.
[0048] Based on the laser module described in any of the above embodiments, the present application also provides a laser device including the laser module described in any of the above embodiments, and the laser device includes but is not limited to laser hair removal equipment, laser heating equipment, laser detection equipment, laser communication equipment, etc. The laser device may also include a housing, the laser module is arranged in the housing, and the laser emitted by the laser module can be projected through the housing.
[0049] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0050] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.
Claims
1. A laser module, characterized in that: The invention comprises a substrate, a laser chip array arranged on the substrate and a light shaping element arranged in front of a surface of the laser chip array away from the substrate, wherein the projection of the light shaping element on the substrate completely covers the light emitting area of the laser chip array.
2. The laser module according to claim 1, characterized in that: The light shaping element is a cuboid.
3. The laser module according to claim 1, characterized in that: The inner wall of the light shaping element is totally reflected.
4. The laser module according to claim 3, characterized in that: The light shaping element comprises a quartz light guide plate and / or a sapphire light guide plate with total reflection on the inner wall.
5. The laser module according to claim 4, characterized in that: The light shaping element is a quartz light guide plate with total reflection on the inner wall. The distance between the surface of the quartz light guide plate facing the laser chip array and the surface facing away from the laser chip array is T1, and 30 mm ≤ T1 ≤ 60 mm.
6. The laser module according to claim 4, characterized in that: The light shaping element is a sapphire light guide plate with total reflection on the inner wall. The distance between the surface of the sapphire light guide plate facing the laser chip array and the surface facing away from the laser chip array is T2, 5mm≤T2≤50mm.
7. The laser module according to claim 4, characterized in that: The light shaping elements are a quartz light guide plate and a sapphire light guide plate with total inner wall reflection. The distance between the surface of the quartz light guide plate facing the laser chip array and the surface facing away from the laser chip array is T1, 30mm≤T1≤40mm; the distance between the surface of the sapphire light guide plate facing the laser chip array and the surface facing away from the laser chip array is T2, 5mm≤T2≤20mm.
8. The laser module according to claim 5 or claim 6, characterized in that: An optical anti-reflection film is evaporated on the surface of the light shaping element facing the laser chip array.
9. The laser module according to claim 7, characterized in that: An optical anti-reflection film is evaporated on the surface of the quartz light guide plate facing the laser chip array, the surface of the quartz light guide plate facing away from the laser chip array, and the surface of the sapphire light guide plate facing the laser chip array.
10. A laser device, characterized in that: It comprises a shell and a laser module as described in any one of claims 1 to 9, wherein the laser module is arranged in the shell.