Preheat ring and semiconductor device

Abstract

The utility model provides a preheating ring and semiconductor equipment. The preheating ring comprises an annular structure and a plurality of protruding blocks. The bumps are distributed on the annular surface of the annular structure at intervals in a staggered manner so as to disturb the flow of the reaction gas and reduce the flow velocity of the reaction gas, so that a boundary layer formed by the reaction gas moves forwards to the surface of the annular structure, and the flow velocity of the reaction gas flowing into the surface of the wafer is close to zero; the reaction gas can be uniformly distributed in each area of the wafer, and uniform reaction of each area of the wafer is realized, so that a film layer with uniform thickness can be generated, and the performance and yield of a product are greatly improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor manufacturing, in particular to a preheating ring and semiconductor equipment. Background Art

[0002] Epitaxy (EPI) refers to the process of growing a single-crystal thin film with a certain thickness, resistance and model that has the same lattice arrangement as the substrate along the crystal direction of the substrate. At present, in the manufacturing process of semiconductor fin field-effect transistors (FinField-Effect Transistor, FinFET), the EPI process is usually used to prepare a selective epitaxial layer, such as growing the source and drain of NMOS and PMOS. In order to fully activate the reaction gas, a preheat ring is used in the EPI process to heat the reaction gas and improve the film growth effect.

[0003] like Figure 1 As shown, during the EPI process, the reaction gas G enters the reaction chamber 102 from the air inlet pipe 101, flows to the surface of the wafer M after being heated by the preheating ring 103, and reacts with the surface of the wafer M to form an epitaxial film layer, and finally is pumped out of the reaction chamber 102 through the pump body in the air outlet pipe 104. However, according to the boundary layer theory, the reaction gas G with a certain flow rate will gradually decrease in speed when it contacts the surface of the wafer M due to the friction force, that is, the edge of the wafer has an insufficient reaction due to the fast gas flow rate, and is thinner than the center. Therefore, Figure 2 As shown, the epitaxial layer 105 formed on the surface of the wafer M tends to present a morphology that is thick in the middle and thin at the edges, which makes the film thickness distribution of the epitaxial layer 105 uneven, resulting in large differences in the electrical performance of the semiconductor device in different areas, seriously affecting the chip yield.

[0004] Therefore, a new process equipment is urgently needed to solve the above technical problems. Utility Model Content

[0005] The utility model aims to provide a preheating ring and a semiconductor device to solve at least one of the following problems: how to improve reaction uniformity, how to improve film growth uniformity and how to improve semiconductor device yield.

[0006] In order to solve the above technical problems, the utility model provides a preheating ring for preheating reaction gas, comprising: an annular structure and a plurality of protrusions; wherein the protrusions are spaced apart and staggeredly distributed on the annular surface of the annular structure to disturb the flow of the reaction gas and reduce the flow rate of the reaction gas.

[0007] Optionally, in the preheating ring, the protrusion includes a first protrusion, a second protrusion, a third protrusion and a bottom plate; wherein the first protrusion, the second protrusion and the third protrusion are distributed on the bottom plate in sequence and at intervals along the flow direction of the reaction gas.

[0008] Optionally, in the preheating ring, the number of the second protrusions is greater than or equal to 2, and the second protrusions are distributed in sequence and at intervals along the flow direction of the reaction gas.

[0009] Optionally, in the preheating ring, the first protrusion, the second protrusion and the third protrusion all have a blocking surface and a guiding surface; wherein,

[0010] The blocking surface and the guiding surface are arranged in sequence along the flow direction of the reaction gas, and the surface where the blocking surface is located is arranged at an angle to the surface where the guiding surface is located, so that the blocking surface blocks the flow of the reaction gas and adjusts the flow direction of the reaction gas upward, and the guiding surface guides the flow direction of the reaction gas downward.

[0011] Optionally, in the preheating ring, the angle between the blocking surface of the first protrusion and the annular surface of the annular structure is a first acute angle, and the angle between the guiding surface of the third protrusion and the annular surface of the annular structure is a second acute angle; and the first acute angle is greater than or equal to the second acute angle.

[0012] Optionally, in the preheating ring, the cross-sectional shapes of the first protrusion, the second protrusion and the third protrusion include a trapezoid.

[0013] Optionally, in the preheating ring, the maximum height of the first protrusion and the maximum height of the third protrusion are both greater than the maximum height of the second protrusion.

[0014] Optionally, in the preheating ring, the annular structure has an air inlet end and an air outlet end, and the reaction gas flows into the ring of the annular structure through the air inlet end and flows out through the air outlet end; wherein the plurality of bumps are distributed at least within the air inlet end, and the area of ​​the distribution region of the plurality of bumps is less than or equal to half of the annular surface area of ​​the annular structure.

[0015] Optionally, in the preheating ring, the air inlet end has a central area and an edge area, the central area corresponds to the flow center of the reaction gas; and in the direction from the central area to the edge area, the distribution density of each of the bumps decreases.

[0016] Based on the same concept, the utility model also provides a semiconductor device, including a reaction chamber and the preheating ring; wherein the preheating ring is accommodated in the reaction chamber, and a heat source is provided in the reaction chamber, and the heat source can heat the preheating ring so that the preheating ring preheats the reaction gas; and the multiple bumps in the preheating ring are also used to disturb the flow of the reaction gas and reduce the flow rate of the reaction gas.

[0017] In summary, the utility model provides a preheating ring and a semiconductor device. The preheating ring includes an annular structure and a plurality of bumps; and the bumps are spaced apart and staggered on the annular surface of the annular structure to disturb the flow of the reaction gas, reduce the flow rate of the reaction gas, and make the boundary layer formed by the reaction gas move forward to the surface of the annular structure, thereby making the flow rate of the reaction gas flowing into the surface of the wafer close to zero, which is conducive to the uniform distribution of the reaction gas in various areas of the wafer, achieving uniform reaction in various areas of the wafer, so as to generate a film layer with uniform thickness, greatly improving product performance and yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Those skilled in the art will appreciate that the drawings are provided for a better understanding of the present invention, but do not constitute any limitation on the scope of the present invention.

[0019] Figure 1 It is a structural schematic diagram of a preheating ring and a reaction chamber in the prior art.

[0020] Figure 2 It is a schematic diagram of the boundary layer causing uneven film generation in the prior art.

[0021] Figure 3 It is a top view of the preheating ring in the embodiment of the utility model.

[0022] Figure 4 It is a schematic diagram of a plurality of protrusions distributed in a staggered manner in an embodiment of the utility model.

[0023] Figure 5 It is a top view of the annular structure in the embodiment of the utility model.

[0024] Figure 6 It is a structural schematic diagram of a protrusion in an embodiment of the utility model.

[0025] Figure 7 It is a schematic diagram of the speed change of the reaction gas flowing through the bump in the embodiment of the utility model.

[0026] Figure 8 It is a schematic diagram of the change in gas molecule distribution when the reaction gas flows through the bump in the embodiment of the utility model.

[0027] Fig. 9 It is a schematic diagram of the boundary layer moving forward to the annular structure in an embodiment of the present utility model.

[0028] Fig.10 It is a schematic diagram of the size relationship of various parts of a protrusion in an embodiment of the utility model.

[0029] And, in the attached drawings:

[0030] 101-inlet pipe; 102-reaction chamber; 103-preheating ring; 104-outlet pipe; 105-epitaxial layer;

[0031] 201-annular structure; 2011-inlet end; 2012-outlet end; 202-bump; 2021-first protrusion; 2022-second protrusion; 2023-third protrusion; 2024-bottom plate;

[0032] G-reactive gas; M-wafer; Q1-central area; Q2-edge area; B-blocking surface; L-guiding surface; E-film layer; V-circumferential direction; α-first acute angle; β-second acute angle. DETAILED DESCRIPTION

[0033] In order to make the purpose, advantages and features of the utility model clearer, the utility model is further described in detail in conjunction with the accompanying drawings and specific embodiments. It should be noted that the drawings are all in a very simplified form and are not drawn to scale, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the utility model. In addition, the structure shown in the drawings is often a part of the actual structure. In particular, the emphasis of each drawing is different, and sometimes different proportions are used. It should also be understood that, unless otherwise specified or indicated, the terms "first", "second", "third", etc. in the specification are only used to distinguish between the various components, elements, steps, etc. in the specification, and are not used to represent the logical relationship or sequential relationship between the various components, elements, steps, etc.

[0034] In addition, the X-axis direction, Y-axis direction and Z-axis direction referred to in the present application specification and drawings are three directions perpendicular to each other in three-dimensional space; the cross section refers to the plane where the X-axis-Z-axis is located.

[0035] See also Figure 3 This embodiment provides a preheating ring for preheating a reaction gas G. The preheating ring comprises: an annular structure 201 and a plurality of protrusions 202; wherein the protrusions 202 are spaced apart and staggeredly distributed on the annular surface of the annular structure 201 to disturb the flow of the reaction gas G and reduce the flow rate of the reaction gas G.

[0036] It can be seen that the bump 202 provided in the present embodiment can disturb the flow of the reaction gas G and reduce the flow rate of the reaction gas G, so that the boundary layer formed by the reaction gas G moves forward to the surface of the annular structure 201, thereby making the flow rate of the reaction gas G flowing into the surface of the wafer M close to zero, which is beneficial for the reaction gas G to be evenly distributed in various regions of the wafer M, thereby achieving uniform reaction in various regions of the wafer M, thereby generating a film layer with uniform thickness and greatly improving product performance and yield.

[0037] The following is combined with Figures 3 to 10 , specifically describe the preheating ring provided in this embodiment.

[0038] Please continue reading Figure 3 , the preheating ring provided in this embodiment is used to heat the reaction gas G during the semiconductor preparation process to fully activate it and improve the reaction effect. Wherein, the preheating ring includes an annular structure 201 and a plurality of bumps 202. Both the annular structure 201 and the bumps 202 have high thermal conductivity and high heat resistance, and can fully heat the reaction gas G. In addition, because the bumps 202 have morphological features protruding from the top surface of the annular structure 201, the bumps 202 are also used to disturb the flow of the reaction gas G and reduce the flow rate of the reaction gas G so that the reaction gas G enters a steady state before entering the annular structure 201. That is, the flow rate of the reaction gas G is zero, which is conducive to the uniform distribution of the reaction gas G on the surface of the wafer M, thereby reacting to form an epitaxial layer with uniform thickness. Preferably, as Figure 4 As shown, the plurality of protrusions 202 are distributed at intervals on the annular surface of the annular structure 201, and are staggered along the annular direction V of the annular structure 201 to optimize the flow disturbance of the reaction gas G and achieve efficient speed reduction. In addition, the protrusions 202 are integrally formed with the annular structure 201. It should be noted that the reaction gas G referred to in this embodiment includes but is not limited to thin film growth gas, etching gas or other cleaning gas.

[0039] Specifically, Figure 3 and Figure 5As shown, the shape of the annular structure 201 is annular or similar to annular to match the shape of the wafer M. Preferably, the inner ring diameter of the annular structure 201 is slightly larger than the diameter of the wafer M, so that when the wafer M is located in the ring of the annular structure 201, there is a gap between it and the inner ring edge of the annular structure 201, so that the reaction gas G can flow through the gap and fully contact with the annular structure 201, thereby optimizing the heating and activation effect of the reaction gas G. Further, the annular structure 201 has an air inlet end 2011 and an air outlet end 2012. The air inlet end 2011 is close to the air inlet in the reaction chamber, and the air outlet end 2012 is close to the air outlet in the reaction chamber. Optionally, the annular structure 201 is divided into two halves, one half of which is the air inlet end 2011 and the other half is the air outlet end 2012. Of course, the area of ​​each of the gas inlet end 2011 and the gas outlet end 2012 may also be less than half of the annular surface area of ​​the annular structure 201, and this embodiment does not specifically limit this. Based on this, since the wafer M is located in the ring of the annular structure 201, during the process, the reaction gas G will flow into the ring of the annular structure 201 through the gas inlet end 2011 to contact and react with the surface of the wafer M; and the reacted gas and the gas that did not participate in the reaction will flow out from the gas outlet end 2012.

[0040] It should be noted that, since the reaction gas G entering the gas inlet end 2011 has a certain flow rate, a boundary layer with a certain thickness will inevitably be formed, so the flow rate of the reaction gas G is unevenly distributed corresponding to each area of ​​the wafer M, which easily leads to uneven reaction effect when the reaction gas G reacts with the surface of the wafer M, resulting in uneven thickness of the film layer formed by growth, which seriously affects the performance and yield of the device. Therefore, the preheating ring provided in this embodiment also includes a plurality of bumps 202. The plurality of protrusions 202 are distributed on the annular surface of the annular structure 201, and protrude from the annular surface of the annular structure 201 in the positive semi-axis direction of the Z-axis, so as to block and disturb the flow of the reaction gas G, thereby quickly reducing the flow rate of the reaction gas G, and controlling the boundary layer of the reaction gas G within the air inlet end 2011 of the annular structure 201 as much as possible, so that the reaction gas G enters the surface of the wafer M at zero speed and is evenly distributed on the surface of the wafer M, ensuring uniform reaction with various areas of the surface of the wafer M to form a uniformly distributed film layer, which is beneficial to improving the performance and yield of the device.

[0041] See also Figure 3 , Figure 6 and Figure 7, the protrusion 202 includes a first protrusion 2021, a second protrusion 2022, a third protrusion 2023 and a bottom plate 2024. Preferably, the bottom plate 2024 is integrally formed with the first protrusion 2021, the second protrusion 2022 and the third protrusion 2023. And, the first protrusion 2021, the second protrusion 2022 and the third protrusion 2023 are sequentially spaced and distributed on the bottom plate 2024 along the flow direction of the reaction gas G. That is, the reaction gas G will pass through the multi-stage blocking and disturbance of the first protrusion 2021, the second protrusion 2022 and the third protrusion 2023 in sequence.

[0042] Furthermore, the present embodiment does not limit the specific morphology of the first protrusion 2021, the second protrusion 2022 and the third protrusion 2023, but the first protrusion 2021, the second protrusion 2022 and the third protrusion 2023 all have a blocking surface B and a guiding surface L. The blocking surface B and the guiding surface L are arranged in sequence along the flow direction of the reaction gas G, and the surface where the blocking surface B is located is arranged at an angle to the surface where the guiding surface L is located. Specifically, the blocking surface B is opposite to the flow direction of the reaction gas G so as to intercept the reaction gas G and change the flow direction of the reaction gas G upward. The guiding surface L conforms to the flow direction of the reaction gas G to guide the flow direction of the reaction gas G downward. Preferably, the angle between the blocking surface B and the annular surface of the annular structure 201, and the angle between the guiding surface L and the annular surface of the annular structure 201 are both acute angles. And as Figure 6 As shown, on the plane where the Z axis-X axis is located, when the reaction gas G flows along the positive semi-axis direction of the X axis, the inclination direction of the blocking surface B is located in the first quadrant and the third quadrant, and the inclination direction of the guide surface L is located in the second quadrant and the fourth quadrant.

[0043] Based on this, when the reaction gas G flows along the positive semi-axis direction of the X-axis, part of the airflow will be directly intercepted by the blocking surface B, then the speed of the directly blocked airflow at least in the positive semi-axis direction of the X-axis will be reduced, and the speed in the positive semi-axis direction of the Y-axis will be appropriately increased. Along the inclined direction of the blocking surface B, the directly blocked airflow flows toward the upper airflow to disturb the flow of the airflow in the upper airflow that is not directly blocked by the blocking surface B, thereby achieving indirect blocking of the upper airflow, and also reducing the speed of the upper airflow in the positive semi-axis direction of the X-axis, which is conducive to controlling the boundary layer formed by the reaction gas G within the area of ​​the annular structure 201, so that the reaction gas G can enter the surface of the wafer M at a speed of zero or close to zero, which is conducive to the reaction to generate a film layer with better uniformity. Among them, in order to avoid the chaotic flow direction of the gas after deceleration, the inclined morphology of the guide surface L is conducive to guiding the decelerated gas to sink to the surface of the bottom plate 2024, so as to further adjust the gas flow rate, or guide it to the surface of the wafer M to participate in the reaction.

[0044] Preferably, the maximum height of the first protrusion 2021 and the maximum height of the third protrusion 2023 are both greater than the maximum height of the second protrusion 2022. That is, the height of the second protrusion 2022 is relatively low, so that the overall shape of the protrusion 202 is a groove. Based on this, after the flow disturbance of the first protrusion 2021, the reaction gas G will sink to the second protrusion 2022 in the groove, and then be blocked by the second protrusion 2022, further strengthening the airflow disturbance and reducing the flow rate. Preferably, one, two, three or more second protrusions 2022 can be arranged between the first protrusion 2021 and the third protrusion 2023 to achieve multi-stage disturbance of the reaction gas G and effectively achieve rapid reduction of the airflow speed. Wherein, when the number of the second protrusions 2022 is greater than or equal to 2, each of the second protrusions 2022 is distributed in sequence along the flow direction of the reaction gas G.

[0045] For example, Figure 6 , Figure 7 and Figure 8As shown, the convex block 202 includes the first protrusion 2021, the second protrusion 2022 and the third protrusion 2023. The first protrusion 2021, the second protrusion 2022 and the third protrusion 2023 are in the shape of a quadrangular pyramid, and the cross section is preferably a trapezoid. Wherein, along the flow direction of the reaction gas G, the two opposite inclined surfaces of the first protrusion 2021, the second protrusion 2022 and the third protrusion 2023 are the blocking surface B and the guiding surface L respectively. Wherein, in order to achieve a rapid reduction in the flow rate of the reaction gas G, the heights of the first protrusion 2021 and the third protrusion 2023 are both greater than the height of the second protrusion 2022. It can be understood that when the reaction gas G flows along the positive semi-axis direction of the X-axis, it will first pass through the blocking surface B of the first protrusion 2021, and under the blocking thereof, part of the reaction gas G will flow obliquely upward along the blocking surface B of the first protrusion 2021, and its own speed in the X-axis direction will be sharply reduced. At the same time, when the part of the reaction gas G flowing obliquely upward reaches the peak of the first protrusion 2021, it will disturb the flow of the reaction gas G located above the peak, and will also reduce the speed of the reaction gas G located above the peak in the X-axis direction. Further, after the reaction gas G passes through the peak of the first protrusion 2021, under the guidance of the guide surface L of the first protrusion 2021, the reaction gas G will sink along the guide surface L to the surface of the bottom plate 2024. And because the height of the second protrusions 2022 is relatively low, the reaction gas G that sinks to the surface of the bottom plate 2024 will sequentially pass through the blocking surface B and the guiding surface L of the second protrusions 2022, and flow upward and downward again, so as to strengthen the sufficient disturbance of the reaction gas G. And when the number of the second protrusions 2022 is large, each of the second protrusions 2022 will further strengthen the airflow disturbance of the reaction gas G, and achieve efficient buffering of the flow rate of the reaction gas G.

[0046] Furthermore, after the reaction gas G passes through the second protrusion 2022, and under the influence of the blocking surface B of the third protrusion 2023, it will once again flow in an obliquely upward direction to the peak of the third protrusion 2023, and the airflow above the peak will be disturbed again, further reducing the flow velocity of the reaction gas G in the X-axis direction, so that the flow velocity of the reaction gas G is close to 0. After passing the peak of the third protrusion 2023, the flow velocity of the reaction gas G has dropped to a lower level. And under the action of the guide surface L of the third protrusion 2023, the ultra-low speed reaction gas G sinks along the guide surface L to the bottom plate 2024. Since the bottom plate 2024 is connected to the annular structure 201, the reaction gas G will eventually flow into the surface of the wafer M along the inner ring of the annular structure 201. Figure 7 , Figure 8 and Fig. 9 As shown, after the reaction gas G passes through the first protrusion 2021, the second protrusion 2022 and the third protrusion 2023 in sequence, the flow rate of the reaction gas G gradually decreases until it is close to zero speed, and the gas molecules in the reaction gas G are gradually precipitated and distributed downward, which is conducive to full contact with the surface of the wafer M. It can be understood that, because the flow rate of the reaction gas G entering the surface of the wafer M is close to or equal to zero, the boundary layer formed by the reaction gas G with a certain flow rate will only move forward to the surface of the annular structure 201, and no boundary layer will be formed on the surface of the wafer M, so that the reaction gas G with zero speed can be evenly distributed in various regions of the surface of the wafer M, achieving uniform reaction in various regions of the surface of the wafer M, and can grow a film layer E with uniform thickness, which is conducive to improving product performance and improving product yield.

[0047] To further optimize the technical effect, such as Figure 3 and Figure 6 As shown, the angle between the blocking surface B of the first protrusion 2021 and the annular surface of the annular structure 201 is a first acute angle α, and the angle between the guiding surface L of the third protrusion 2023 and the annular surface of the annular structure 201 is a second acute angle β; and the first acute angle α is greater than or equal to the second acute angle β. It can be understood that when the first acute angle α is greater than the second acute angle β, the slope of the blocking surface B of the first protrusion 2021 is larger, which is conducive to the initial rapid blocking of the reaction gas G and the sharp reduction of the flow rate; while the slope of the guiding surface L of the third protrusion 2023 is smaller, then the ultra-low speed reaction gas G after being fully disturbed can slowly flow along the guiding surface L of the third protrusion 2023 to the surface of the wafer M, so that the flow rate will not be increased due to the larger slope, which is conducive to the uniform reaction of the surface of the wafer M.

[0048] It should be noted that this embodiment does not limit the specific size, distribution gap of the protrusion 202 and the gap between the first protrusion 2021, the second protrusion 2022 and the third protrusion 2023. For example, Figure 4 and Fig.10 As shown, for the annular structure 201 with a ring width of 6 cm and an inner ring diameter of 330 mm, the spacing between two adjacent protrusions 202 along the Y-axis direction is ρ=40 nm. Also, the first protrusion 2021 and the third protrusion 2023 have the same shape and size, and the shape of the second protrusion 2022 is similar to that of the first protrusion 2021 and the third protrusion 2023, but the size is smaller. Specifically, D1=30 nm; D2=20 nm; D3=45 nm; D4=50 nm; D5=35 nm; D6=30 nm; W=40 nm; H1=40 nm; H2=40 nm; H3=25 nm.

[0049] Further, such as Figure 3 and Figure 5 As shown, in order to ensure that the bumps 202 effectively reduce the flow rate of the reaction gas G, the multiple bumps 202 provided in this embodiment are at least distributed in the inlet end 2011, and the area of ​​the distribution area of ​​the multiple bumps 202 is less than or equal to half of the annular surface area of ​​the annular structure 201. In other words, the multiple bumps 202 are distributed on the semi-annular area of ​​the annular structure 201 near the inlet, so that the reaction gas G can enter the ring of the annular structure 201 after being fully disturbed by the multiple bumps 202. And preferably, the multiple bumps 202 fill the semi-annular area of ​​the annular structure 201 near the inlet, so that the reaction gas G in contact with the wafer M is decelerated by the bumps 202. Among them, because the reacted gas needs to be discharged from the reaction chamber in time, the bumps 202 are not provided on the outlet end 2012 to avoid blocking the exhaust.

[0050] Furthermore, due to the flow viscosity of the reaction gas G, the flow velocity of the flow center of the reaction gas G will be greater than the flow velocity of the flow edge of the reaction gas G. Therefore, in order to cope with the flow velocity of different regions of the reaction gas G, the distribution density of the plurality of protrusions 202 on the annular structure 201 is also different. Specifically, the inlet end 2011 has a central region Q1 and an edge region Q2, and the central region Q1 corresponds to the flow center of the reaction gas G2. That is, the flow center of the reaction gas G2 will flow through the central region Q1. In this regard, the distribution density of each of the protrusions 202 decreases in the direction from the central region Q1 toward the edge region Q2. In short, the distribution density of the protrusions 202 located in the central region Q1 is greater than the density of the protrusions 202 located in the edge region Q2. Based on this, under the same deceleration effect on each region of the reaction gas G, the number of protrusions 202 can be reduced, thereby reducing the manufacturing cost.

[0051] Based on the same concept, this embodiment also provides a semiconductor device, including a reaction chamber and the above-mentioned preheating ring. Wherein, the reaction chamber has an air inlet and an air outlet, so that the reaction gas G flows in from the air inlet and then flows out from the air outlet. The preheating ring is accommodated in the reaction chamber, and a heat source is arranged in the reaction chamber, and the heat source can heat the preheating ring so that the preheating ring preheats the reaction gas G. And because a plurality of bumps 202 are distributed on the annular structure 201, when the reaction gas G flows in from the air inlet, it will be disturbed by a plurality of bumps 202 to reduce the flow rate of the reaction gas G, realize the forward movement of the boundary layer, and ensure that the reaction gas G in a steady state can be evenly distributed on the surface of the wafer M, so as to realize uniform reaction of each region of the wafer M. Wherein, this embodiment does not specifically limit the semiconductor device to an epitaxial layer growth device or other vapor deposition device.

[0052] In summary, in the preheating ring and semiconductor device provided in this embodiment, a plurality of protrusions 202 are distributed on the surface of the annular structure 201 in the preheating ring. The protrusion 202 has a first protrusion 2021, a second protrusion 2022 and a third protrusion 2023 arranged at intervals along the flow direction of the reaction gas G. The reaction gas G will pass through the multi-stage blocking of the first protrusion 2021, the second protrusion 2022 and the third protrusion 2023 in sequence during the flow process, so as to achieve effective disturbance of the reaction gas G, and then quickly reduce the flow rate of the reaction gas G, so that the boundary layer formed by the reaction gas G moves forward to the surface of the gas inlet end 2011 of the annular structure 201, and the flow rate of the reaction gas G flowing into the wafer M can be close to zero, which is conducive to the uniform distribution of the reaction gas G in various regions of the wafer M, achieving uniform reaction of various regions of the wafer M, and generating a film layer E with uniform thickness, greatly improving the performance and yield of the product.

[0053] In addition, it should be recognized that although the present invention has been disclosed as a preferred embodiment, the above embodiment is not intended to limit the present invention. For any technician familiar with the art, without departing from the scope of the technical solution of the present invention, the above disclosed technical content can be used to make many possible changes and modifications to the technical solution of the present invention, or modified into equivalent embodiments of equivalent changes. Therefore, any simple modification, equivalent change and modification made to the above embodiment based on the technical essence of the present invention without departing from the content of the technical solution of the present invention still falls within the scope of protection of the technical solution of the present invention.

Claims

1. A preheating ring for preheating reaction gas, characterized in that: include: An annular structure and a plurality of protrusions; the protrusions are spaced apart and staggeredly distributed on the annular surface of the annular structure to disturb the flow of the reaction gas and reduce the flow rate of the reaction gas; wherein, The convex block includes a first convex portion, a second convex portion, a third convex portion and a bottom plate; the first convex portion, the second convex portion and the third convex portion are sequentially spaced and distributed on the bottom plate along the flow direction of the reaction gas.

2. The preheating ring according to claim 1, characterized in that: The number of the second protrusions is greater than or equal to 2, and the second protrusions are distributed in sequence and at intervals along the flow direction of the reaction gas.

3. The preheating ring according to claim 1 or 2, characterized in that: The first protrusion, the second protrusion and the third protrusion all have a blocking surface and a guiding surface; wherein, The blocking surface and the guiding surface are arranged in sequence along the flow direction of the reaction gas, and the surface where the blocking surface is located is arranged at an angle to the surface where the guiding surface is located, so that the blocking surface blocks the flow of the reaction gas and adjusts the flow direction of the reaction gas upward, and the guiding surface guides the flow direction of the reaction gas downward.

4. The preheating ring according to claim 3, characterized in that: The angle between the blocking surface of the first protrusion and the annular surface of the annular structure is a first acute angle, and the angle between the guiding surface of the third protrusion and the annular surface of the annular structure is a second acute angle; and the first acute angle is greater than or equal to the second acute angle.

5. The preheating ring according to claim 1 or 2, characterized in that: The cross-sectional shape of the first protrusion, the second protrusion, and the third protrusion includes a trapezoid.

6. The preheating ring according to claim 1 or 2, characterized in that: The maximum height of the first protrusion and the maximum height of the third protrusion are both greater than the maximum height of the second protrusion.

7. The preheating ring according to claim 1, characterized in that: The annular structure has an air inlet end and an air outlet end, and the reaction gas flows into the ring of the annular structure through the air inlet end and flows out through the air outlet end; wherein the multiple protrusions are distributed at least within the air inlet end, and the area of ​​the distribution region of the multiple protrusions is less than or equal to half of the annular surface area of ​​the annular structure.

8. The preheating ring according to claim 7, characterized in that: The gas inlet end has a central area and an edge area, the central area corresponds to the flow center of the reaction gas; and along the direction from the central area to the edge area, the distribution density of each of the protrusions decreases.

9. A semiconductor device, characterized in that: It comprises a reaction chamber and a preheating ring as claimed in any one of claims 1 to 8; wherein the preheating ring is accommodated in the reaction chamber, and a heat source is provided in the reaction chamber, the heat source can heat the preheating ring so that the preheating ring preheats the reaction gas; and the plurality of bumps in the preheating ring are also used to disturb the flow of the reaction gas and reduce the flow rate of the reaction gas.

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