Film system structure for improving film pinhole light leakage

Abstract

The utility model discloses a film system structure for improving film pinhole light leakage, which comprises a wafer, shading film layers are respectively plated on the upper surface and the lower surface of the wafer, the shading film layers comprise a first film layer, a second film layer, a third film layer, a fourth film layer and a fifth film layer which are sequentially plated from inside to outside, the first film layer, the third film layer and the fifth film layer are SiO2 film layers, and the first film layer, the second film layer, the third film layer and the fifth film layer are SiO2 film layers. And the second film layer and the fourth film layer are Ti film layers. The wafer is arranged in the middle, the shading film layers are respectively formed on the upper surface and the lower surface through the SiO2 + Ti film layer structures, the film layers on the two surfaces form a complementary relation, the probability that pinholes appear at the same position on the two surfaces is extremely low, the light leakage rate is reduced to be within 1%, and the defect caused by light leakage of a product is perfectly solved.

Description

Technical Field

[0001] The utility model relates to the field of optical coating processing, in particular to a film system structure for improving pinhole light leakage in a film layer. Background Art

[0002] Optical coating refers to the process of forming gaseous molecules through physical or chemical means, and then reorganizing the structure in the form of molecules after reaching the surface of the workpiece. Usually, one or more layers of thin films of different materials are coated on the surface of an optical glass wafer to make its spectral characteristics meet specific requirements.

[0003] According to market demand, patterns need to be projected or projected in specific optical fields, and the area outside the product pattern needs to be shading. However, pinholes and light leakage are inevitable in the process, affecting the use effect of the product. Utility Model Content

[0004] In order to solve the above technical problems, the utility model designs a film system structure for improving pinhole light leakage in the film layer.

[0005] The utility model adopts the following technical solutions:

[0006] A film system structure for improving pinhole light leakage in a film layer comprises a wafer, wherein the upper and lower surfaces of the wafer are respectively coated with light-shielding film layers, wherein the light-shielding film layers comprise a first film layer, a second film layer, a third film layer, a fourth film layer and a fifth film layer which are sequentially coated from the inside to the outside, wherein the first film layer, the third film layer and the fifth film layer are SiO 2 The film layer, the second film layer and the fourth film layer are Ti film layers.

[0007] Preferably, the light-shielding film layers on the upper and lower surfaces of the wafer are symmetrically distributed.

[0008] Preferably, the thickness of the first film layer is 30-60 nm, the thickness of the second film layer is 100-150 nm, the thickness of the third film layer is 35-60 nm, the thickness of the fourth film layer is 110-165 nm, and the thickness of the fifth film layer is 45-75 nm.

[0009] The beneficial effect of the utility model is that the middle of the utility model is a wafer, and the upper and lower surfaces are respectively 2 The +Ti film structure forms a light-shielding film layer, and the double-sided film layers form a complementary relationship. The probability of pinholes appearing at the same position on both sides at the same time is extremely low, reducing the light leakage rate to less than 1%, perfectly solving the problem of product defects caused by light leakage. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 It is a structural schematic diagram of the utility model;

[0011] In the figure: 1, wafer, 2, first film layer, 3, second film layer, 4, third film layer, 5, fourth film layer, 6, fifth film layer. DETAILED DESCRIPTION

[0012] The technical solution of the utility model is further described in detail below through specific embodiments and in conjunction with the accompanying drawings:

[0013] Example 1: Figure 1 As shown, a film system structure for improving pinhole light leakage in a film layer comprises a wafer 1, wherein the upper and lower surfaces of the wafer are respectively coated with light-shielding film layers, wherein the light-shielding film layers comprise a first film layer 2, a second film layer 3, a third film layer 4, a fourth film layer 5 and a fifth film layer 6 which are sequentially coated from the inside to the outside, and the first film layer, the third film layer and the fifth film layer are SiO 2 The film layer, the second film layer and the fourth film layer are Ti film layers.

[0014] The light shielding film layers on the upper and lower surfaces of the wafer are symmetrically distributed. The thickness of the first film layer is 45nm, the thickness of the second film layer is 125nm, the thickness of the third film layer is 50nm, the thickness of the fourth film layer is 140nm, and the thickness of the fifth film layer is 60nm.

[0015] Embodiment 2: A film system structure for improving pinhole light leakage in a film layer, comprising a wafer, wherein the upper and lower surfaces of the wafer are respectively coated with a light-shielding film layer, and the light-shielding film layer comprises a first film layer, a second film layer, a third film layer, a fourth film layer and a fifth film layer sequentially coated from the inside to the outside, and the first film layer, the third film layer and the fifth film layer are SiO 2 The film layer, the second film layer and the fourth film layer are Ti film layers.

[0016] The thickness of the first film layer is 30 nm, the thickness of the second film layer is 100 nm, the thickness of the third film layer is 35 nm, the thickness of the fourth film layer is 110 nm, and the thickness of the fifth film layer is 45 nm.

[0017] Embodiment 3: A film system structure for improving pinhole light leakage in a film layer, comprising a wafer, wherein the upper and lower surfaces of the wafer are respectively coated with a light-shielding film layer, and the light-shielding film layer comprises a first film layer, a second film layer, a third film layer, a fourth film layer and a fifth film layer sequentially coated from the inside to the outside, and the first film layer, the third film layer and the fifth film layer are SiO 2 The film layer, the second film layer and the fourth film layer are Ti film layers.

[0018] The thickness of the first film layer is 60 nm, the thickness of the second film layer is 150 nm, the thickness of the third film layer is 60 nm, the thickness of the fourth film layer is 165 nm, and the thickness of the fifth film layer is 75 nm.

[0019] The utility model has a wafer in the middle, and the upper and lower surfaces are respectively made of SiO 2The +Ti film structure forms a light-shielding film layer, and the double-sided film layers form a complementary relationship. The probability of pinholes appearing at the same position on both sides at the same time is extremely low, reducing the light leakage rate to less than 1%, perfectly solving the problem of product defects caused by light leakage.

[0020] The above-described embodiment is only a preferred solution of the present invention and does not limit the present invention in any form. There are other variations and modifications without exceeding the technical solution described in the claims.

Claims

1. A film structure for improving pinhole light leakage in a film layer, comprising a wafer, characterized in that: The upper and lower surfaces of the wafer are respectively coated with shading film layers, and the shading film layers include a first film layer, a second film layer, a third film layer, a fourth film layer and a fifth film layer coated in sequence from the inside to the outside. The first film layer, the third film layer and the fifth film layer are SiO2 film layers, and the second film layer and the fourth film layer are Ti film layers.

2. The film system structure for improving pinhole light leakage in the film layer according to claim 1, characterized in that: The light-shielding film layers on the upper and lower surfaces of the wafer are symmetrically distributed.

3. The film system structure for improving pinhole light leakage in the film layer according to claim 1, characterized in that: The thickness of the first film layer is 30-60 nm, the thickness of the second film layer is 100-150 nm, the thickness of the third film layer is 35-60 nm, the thickness of the fourth film layer is 110-165 nm, and the thickness of the fifth film layer is 45-75 nm.

Images