Annealing furnace for heating silicon wafer

Abstract

The utility model discloses an annealing furnace for heating a silicon wafer, which relates to the technical field of silicon wafer production and comprises a frame, a furnace body, a heating device, an illumination device, a furnace body cooling device and a power supply device are arranged in the frame, and a tray assembly is arranged in the furnace body. A limiting assembly is connected to the outer side face of the frame and located outside the tray assembly, the tray assembly comprises a tray, a partition plate is arranged in the middle section of the inner area of the tray, a first cavity and a second cavity are formed in the tray through the partition plate, and multiple sets of hollow areas are formed in the bottom end of the tray and located in the first cavity and the second cavity. The positions, located in the furnace body, of the first cavity and the second cavity in the tray are alternated, so that silicon wafers in one cavity are fed and discharged, meanwhile, the silicon wafers in the other cavity can be heated and annealed, and the processing efficiency of the silicon wafers is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of silicon slice production, in particular to an annealing furnace for heating silicon slices. Background Art

[0002] In the production and preparation of various semiconductor silicon wafers, the annealing process is an important process. Through the annealing process, the defects in the crystalline silicon chip can be reduced and better semiconductor silicon wafer quality can be obtained;

[0003] After searching, a small static annealing furnace (publication number: CN210529109U) is now disclosed. This patent places silicon wafers in the hollow area on the tray and prevents the silicon wafers from falling through a screen to facilitate gas circulation. Since the tray needs to be moved out of the annealing furnace before and after the silicon wafers are heated and annealed, the silicon wafers can be loaded and unloaded. Since it takes a long time to load and unload the silicon wafers, the processing efficiency of the silicon wafers is low. Therefore, we propose an annealing furnace for heating silicon wafers. Utility Model Content

[0004] In view of the deficiencies in the prior art, the utility model provides an annealing furnace for heating a silicon wafer, which solves the problems raised in the above-mentioned background technology.

[0005] To achieve the above objectives, the utility model is implemented through the following technical solutions: an annealing furnace for heating silicon wafers, comprising a frame, a furnace body, a heating device, a lighting device, a furnace body cooling device and a power supply device are arranged inside the frame, a tray assembly is arranged inside the furnace body, and a limiting assembly is connected to the outer side of the frame and located outside the tray assembly;

[0006] The tray assembly includes a tray, a partition is provided in the middle section of the inner area of ​​the tray, a first chamber and a second chamber are formed in the tray by the partition, a plurality of hollow areas are provided at the bottom end of the tray and located in the first chamber and the second chamber, and a blocking net is provided in each hollow area.

[0007] As a further technical solution of the utility model, handles A are connected to the side surfaces of both ends of the tray, slide seats are installed on the front and rear sides of the tray, and guide rails are slidably connected inside each group of slide seats.

[0008] As a further technical solution of the utility model, one end of the tray and the two sets of slide seats are located inside the furnace body, and the two sets of guide rails are connected to the inner side surface of the furnace body and have matching lengths.

[0009] As a further technical solution of the utility model, the limiting assembly includes two groups of fixed plates, both groups of the fixed plates are slidably connected to multiple groups of guide columns, the top ends of the multiple groups of guide columns are commonly connected to two groups of U-shaped frames, the bottom ends of the multiple groups of guide columns are connected to two groups of limiting plates, and a groove is opened in the middle of the bottom end of each group of limiting plates, and the top of the U-shaped frames is connected to a handle B.

[0010] As a further technical solution of the utility model, the inner side surfaces of the two groups of fixing plates are connected to the outer side surfaces of the frame, and the inner dimensions of the grooves are matched with the top dimensions of the handle A.

[0011] As a further technical solution of the utility model, the side surfaces of one group of the limiting plates are in contact with the side surfaces of the tray, and the side surfaces of another group of the limiting plates are in contact with the side surfaces of the partitions.

[0012] Beneficial Effects

[0013] The utility model provides an annealing furnace for heating silicon wafers. Compared with the prior art, the utility model has the following beneficial effects:

[0014] 1. An annealing furnace for heating silicon wafers, by alternating the positions of the first chamber and the second chamber in the tray inside the furnace body, so that while loading and unloading silicon wafers in one chamber, the silicon wafers in another chamber can be heated and annealed, thereby increasing the processing efficiency of the silicon wafers.

[0015] 2. An annealing furnace for heating silicon wafers. By pulling a set of handles B, a jig frame, multiple sets of guide pillars and two sets of limit plates can be moved upward, thereby releasing the limit on the tray and the partition to move the tray. After the movement is completed, loosen the handle B, and the two sets of limit plates move downward due to their own gravity. The side of one set of limit plates fits with the side of the tray, and the side of the other set of limit plates fits with the side of the partition, and a set of handles A is located inside the groove. This structure can facilitate the locking and unlocking of the tray assembly, and the operation is relatively simple. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 A schematic diagram of the structure of an annealing furnace for heating a silicon wafer from a first perspective;

[0017] Figure 2 A schematic diagram of the structure of an annealing furnace for heating a silicon wafer from a second perspective;

[0018] Figure 3 A schematic diagram of the structure of a tray assembly in an annealing furnace for heating silicon wafers;

[0019] Figure 4 The present invention is a schematic diagram of the structure of a limiter assembly in an annealing furnace for heating silicon wafers.

[0020] In the figure: 1. frame; 2. furnace body; 3. tray assembly; 31. tray; 32. partition; 33. first chamber; 34. second chamber; 35. hollow area; 36. screen; 37. handle A; 38. slide seat; 39. guide rail; 4. limit assembly; 41. fixing plate; 42. guide column; 43. profile frame; 44. limit plate; 45. groove; 46. handle B; 5. heating device; 6. lighting device; 7. furnace cooling device; 8. power supply device. DETAILED DESCRIPTION

[0021] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0022] See also Figure 1-2 The utility model provides a technical solution for an annealing furnace for heating silicon wafers: an annealing furnace for heating silicon wafers, comprising a frame 1, a furnace body 2, a heating device 5, a lighting device 6, a furnace body cooling device 7 and a power supply device 8 are arranged inside the frame 1, a tray assembly 3 is arranged inside the furnace body 2, and a limiting assembly 4 is connected to the outer side of the frame 1 and located outside the tray assembly 3.

[0023] See also Figure 3 The tray assembly 3 includes a tray 31, a partition 32 is provided in the middle section of the inner area of ​​the tray 31, a first chamber 33 and a second chamber 34 are formed in the tray 31 through the partition 32, a plurality of hollow areas 35 are provided at the bottom end of the tray 31 and located in the first chamber 33 and the second chamber 34, and a blocking net 36 is provided in each hollow area 35, handles A37 are connected to the side surfaces of both ends of the tray 31, slides 38 are installed on the front and rear sides of the tray 31, and a guide rail 39 is slidably connected inside each slide 38, one end of the tray 31 and the two slides 38 are located inside the furnace body 2, the two guide rails 39 are connected to the inner side of the furnace body 2, and the length dimensions are adapted.

[0024] It should be noted that the hollow area 35 is used to place silicon wafers. The blocking net 36 of the hollow area 35 can not only prevent the silicon wafers from falling, but also facilitate the circulation of gas. The length of the furnace body 2 is half of the length of the tray 31, and the length of the two sets of guide rails 39 is half of the length of the two sets of slides 38. Therefore, the first chamber 33 and the second chamber 34 can be alternately located inside the furnace body 2, and then while the silicon wafers in one chamber are being loaded and unloaded, the silicon wafers in another chamber can be heated and annealed, thereby increasing the processing efficiency of the silicon wafers.

[0025] See also Figure 4 The limiting assembly 4 includes two groups of fixed plates 41, both groups of fixed plates 41 are slidably connected to multiple groups of guide columns 42, the top ends of the multiple groups of guide columns 42 are commonly connected to two groups of U-shaped frames 43, the bottom ends of the multiple groups of guide columns 42 are connected to two groups of limiting plates 44, and a groove 45 is opened in the middle of the bottom end of each group of limiting plates 44, and the top of the U-shaped frame 43 is connected to a handle B46, the side surfaces of the two groups of fixed plates 41 are connected to the outer side surfaces of the frame 1, the internal dimensions of the groove 45 are adapted to the top dimensions of the handle A37, the side surfaces of one group of limiting plates 44 are in contact with the side surfaces of the tray 31, and the side surfaces of the other group of limiting plates 44 are in contact with the side surfaces of the partition 32.

[0026] It should be noted that when the tray assembly 3 needs to be moved, a set of handles B46 can be pulled to move the U-shaped frame 43, multiple sets of guide columns 42 and two sets of limit plates 44 upward, thereby releasing the limit on the tray 31 and the partition 32, and thus moving the tray 31. After the movement is completed, release the handle B46, and the two sets of limit plates 44 move downward under their own gravity. The side of one set of limit plates 44 fits against the side of the tray 31, and the side of the other set of limit plates 44 fits against the side of the partition 32, and a set of handles A37 is located inside the groove 45. This structure can facilitate the locking and unlocking of the tray assembly 3, and the operation is relatively simple.

[0027] The working principle of the utility model: when in use, the silicon wafer in the first chamber 33 of the tray 31 is heated and annealed, and the silicon wafer is placed in the hollow area 35 in the second chamber 34, and the blocking net 36 prevents the silicon wafer from falling;

[0028] After the silicon wafers are processed in the first chamber 33, a set of handles B46 are pulled to move the U-shaped frame 43, the multiple sets of guide pillars 42 and the two sets of limit plates 44 upward, thereby releasing the limit on the tray 31 and the partition 32;

[0029] Then, by pulling the handle A37, the tray 31 and the two sets of slide seats 38 slide outside the two sets of guide rails 39, thereby replacing the position of the second cavity 34 with the first cavity 33 in the tray 31;

[0030] When the handle B46 is released, the two sets of limit plates 44 move downward due to their own gravity, the side of one set of limit plates 44 fits with the side of the tray 31, and the side of the other set of limit plates 44 fits with the side of the partition 32, and the handle A37 is located inside the groove 45;

[0031] Then, the staff can remove the processed silicon wafers in the first chamber 33 and add new silicon wafers to be processed.

Claims

1. An annealing furnace for heating silicon wafers, comprising a frame (1), wherein a furnace body (2), a heating device (5), an illumination device (6), a furnace body cooling device (7) and a power supply device (8) are arranged inside the frame (1), characterized in that: A tray assembly (3) is disposed inside the furnace body (2), and a limiting assembly (4) is connected to the outer side of the frame (1) and is located outside the tray assembly (3); The tray assembly (3) comprises a tray (31), a partition (32) is provided in the middle section of the inner area of ​​the tray (31), a first chamber (33) and a second chamber (34) are formed in the tray (31) by the partition (32), a plurality of groups of hollow areas (35) are provided at the bottom end of the tray (31) and located in the first chamber (33) and the second chamber (34), and a blocking net (36) is provided in each group of hollow areas (35).

2. The annealing furnace for heating a silicon wafer according to claim 1, characterized in that: Both end sides of the tray (31) are connected with handles A (37), the front and rear sides of the tray (31) are installed with slide seats (38), and each group of slide seats (38) is slidably connected with a guide rail (39) inside.

3. The annealing furnace for heating a silicon wafer according to claim 2, characterized in that: The tray (31) and one end of the two sets of slide seats (38) are located inside the furnace body (2), and the two sets of guide rails (39) are connected to the inner side surface of the furnace body (2) and have matching lengths.

4. The annealing furnace for heating a silicon wafer according to claim 1, characterized in that: The limiting assembly (4) comprises two groups of fixing plates (41), the two groups of fixing plates (41) are slidably connected to a plurality of guide posts (42), the top ends of the plurality of guide posts (42) are commonly connected to two groups of shaped frames (43), the bottom ends of the plurality of guide posts (42) are connected to two groups of limiting plates (44), and a groove (45) is provided in the middle of the bottom end of each group of limiting plates (44), and the top ends of the shaped frames (43) are each connected to a handle B (46).

5. The annealing furnace for heating a silicon wafer according to claim 4, characterized in that: The side surfaces of the two groups of fixing plates (41) are connected to the outer side surface of the frame (1), and the inner dimensions of the groove (45) are matched with the top dimensions of the handle A (37).

6. The annealing furnace for heating a silicon wafer according to claim 4, characterized in that: The side surfaces of one group of the limiting plates (44) are in contact with the side surfaces of the tray (31), and the side surfaces of the other group of the limiting plates (44) are in contact with the side surfaces of the partition (32).

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