Gas distribution structure capable of adjusting process parameters and ion etching device

Abstract

The utility model provides a gas distribution structure capable of adjusting process parameters and an ion etching device, belonging to the technical field of ion etching processing, the gas distribution structure capable of adjusting process parameters comprises a chamber body, a gas distribution plate and an opening and closing assembly, the gas distribution plate is provided with a plurality of gas distribution holes, and the opening and closing assembly is used for controlling the opening and closing of any one of the gas distribution holes. According to the utility model, the quantity of the gas distribution holes in the open state can be adjusted through the opening and closing component, the flow can be adjusted, and the gas distribution holes in other positions except a set area can be closed through the opening and closing component, so that process gas only enters the cavity from the set area, and the distribution condition of the process gas in the cavity is adjusted; the flow, the distribution area and the like of process gas can be effectively adjusted, adjustment of process parameters is achieved, and the traditional mode of adjusting through a valve is effectively improved.

Description

Technical Field

[0001] The utility model belongs to the technical field of ion etching processing equipment, and in particular relates to a gas distribution structure with adjustable process parameters and an ion etching device. Background Art

[0002] Plasma etching is a chemical etching process, also known as chemical dry etching. Its advantage is that it does not cause ion damage to the wafer surface. Plasma etching is to remove materials on the surface through a plasma process. The principle is to use the plasma of the process gas to convert the material to be etched from the solid phase to the gas phase, and then suck out the gas phase product through a vacuum pump. Specifically, in plasma etching, the etching gas (process gas) is first injected into the vacuum reaction chamber. When the pressure is stable, the radio frequency is used to generate a glow discharge plasma. Part of the etchant will decompose and produce free radicals after being hit by high-speed electrons. Then the free radicals diffuse to the wafer surface under the boundary layer and are adsorbed by the surface. Under the action of ion bombardment, the free radicals quickly react with the atoms or molecules on the surface to form gaseous byproducts. The volatile byproducts desorbed from the wafer surface diffuse through the boundary layer into the convective airflow and are discharged from the reaction chamber to achieve etching. In plasma etching, the selection of process parameters such as gas type, gas flow rate, heating temperature, etc. has an important influence on the etching rate. By reasonably adjusting the process parameters, such as selecting appropriate gas, adjusting gas flow rate and pressure, the etching efficiency can be effectively improved, and the etching effect and quality can be improved. In the relevant prior art, the adjustment is generally performed through the valve on the process gas delivery pipeline, and the adjustment effect is limited. Utility Model Content

[0003] The utility model aims to solve at least one of the above-mentioned technical problems existing in the prior art. To this end, in a first aspect, the utility model provides a gas distribution structure with adjustable process parameters, which can adjust the distribution area of ​​the process gas while adjusting the flow rate of the process gas.

[0004] In a second aspect, the utility model provides an ion etching device using the above-mentioned gas distribution structure with adjustable process parameters.

[0005] The gas distribution structure with adjustable process parameters according to the first aspect of the present invention includes:

[0006] A chamber body, wherein a cavity is arranged inside the chamber body, and a gas inlet is arranged on the chamber body;

[0007] An air distribution plate, the air distribution plate being detachably connected to the inner wall of the cavity, the air distribution plate covering the gas inlet, and the air distribution plate being provided with a plurality of air distribution holes, the air distribution holes communicating with the gas inlet and the cavity;

[0008] An opening and closing component is arranged on the air distribution plate, and the opening and closing component is used to control the opening and closing of any of the air distribution holes.

[0009] According to the adjustable process parameter gas distribution structure of the embodiment of the utility model, there are at least the following beneficial effects: the adjustable process parameter gas distribution structure of the utility model is provided with an opening and closing component on the gas distribution plate, and the opening and closing component is used to control the opening and closing of any gas distribution hole. When the process gas is fed into the cavity through the gas inlet, the number of gas distribution holes in the open state can be adjusted by the opening and closing component to adjust the flow rate. The gas distribution holes in other positions outside the set area can also be closed by the opening and closing component, so that the process gas only enters the cavity from the set area, thereby adjusting the distribution of the process gas in the cavity. Therefore, the adjustable process parameter gas distribution structure of the utility model can effectively adjust the flow rate, distribution area, etc. of the process gas, realize the adjustment of the process parameters, and effectively improve the traditional method of adjusting by valves.

[0010] According to some embodiments of the utility model, the opening and closing assembly includes a plurality of sealing plates, which are detachably connected to the air distribution plate and are used to close and cover the air distribution holes.

[0011] According to some embodiments of the utility model, a first cavity connected to the gas inlet is provided at one end of the gas distribution plate close to the gas inlet, the gas distribution holes are connected to the first cavity, and the sealing plate is detachably connected to the first cavity.

[0012] According to some embodiments of the present invention, the air distribution plate is provided with a plurality of threaded holes, and the sealing plate can be installed at different positions of the air distribution plate by connecting the threaded holes with screws.

[0013] According to some embodiments of the present invention, the sealing plate is one or more of a square structure, a circular structure, an annular structure, a fan-shaped structure or a special-shaped structure.

[0014] According to some embodiments of the utility model, the gas distribution structure with adjustable process parameters also includes a guide plate, which is arranged between the gas distribution plate and the inner wall of the cavity, and a plurality of guide holes are arranged on the guide plate, the number of the guide holes is less than the number of the gas distribution holes, and the gas inlet is connected to the cavity through the guide holes and the gas distribution holes.

[0015] According to some embodiments of the present utility model, a second cavity connected to the gas inlet is provided at one end of the guide plate close to the gas inlet, and the guide holes are distributed in the second cavity.

[0016] According to some embodiments of the present utility model, a third concave cavity is provided at one end of the guide plate close to the air distribution plate, and the air distribution holes and the guide holes are connected to the third concave cavity.

[0017] According to some embodiments of the present invention, the chamber body includes a cover plate, the gas inlet is provided on the cover plate, and the gas distribution plate is connected to the inner side of the cover plate.

[0018] According to the ion etching device of the second embodiment of the utility model, it includes the gas distribution structure with adjustable process parameters of any of the above-mentioned embodiments.

[0019] According to the ion etching device of the embodiment of the utility model, there are at least the following beneficial effects: the ion etching device in the utility model can change the flow rate, flow velocity, distribution area, etc. of the process gas in the cavity by adjusting the opening and closing of the gas distribution holes through the application of the above-mentioned adjustable process parameter pair gas distribution structure, thereby realizing more adjustment methods and effectively improving the shortcomings of traditional valve adjustment.

[0020] Additional aspects and advantages of the present invention will be partially given in the following description, and some of the additional aspects and advantages will become apparent from the following description, or will be understood through the practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The present invention is further described below with reference to the accompanying drawings and embodiments, wherein:

[0022] Figure 1 It is a schematic diagram of the overall structure of the utility model;

[0023] Figure 2 A schematic diagram of the position relationship of the cover plate, the guide plate and the air distribution plate;

[0024] Figure 3 It is a schematic diagram of the axial structure of the cover plate, the guide plate and the air distribution plate;

[0025] Figure 4 A schematic diagram of a setting of a guide plate;

[0026] Figure 5 A schematic diagram of a setting of an air distribution plate;

[0027] Figure 6 A schematic diagram of a sealing plate setting;

[0028] Figures 7 to 10 Schematic diagram of different forms of air holes in the sealing cloth.

[0029] In the figure:

[0030] 100-chamber body, 101-box, 102-cover plate, 103-chamber;

[0031] 200-gas inlet;

[0032] 300-air distribution plate, 301-first concave cavity, 302-air distribution hole;

[0033] 400-guide plate, 401-second concave cavity, 402-third concave cavity, 403-guide hole;

[0034] 500-Sealing board. DETAILED DESCRIPTION

[0035] The embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0036] In the description of the present invention, it should be understood that the descriptions involving orientation, such as the orientation or positional relationship indicated as up, down, etc., are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0037] In the description of the present utility model, "a plurality" means more than two. If there is a description of "first" or "second", it is only for the purpose of distinguishing the technical features, and cannot be understood as indicating or implying the relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0038] In the description of the present invention, unless otherwise clearly defined, terms such as setting, installing, connecting, etc. should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in the present invention based on the specific content of the technical solution.

[0039] Plasma etching is a chemical etching process, also known as chemical dry etching. Its advantage is that it does not cause ion damage to the wafer surface. Plasma etching is to remove materials on the surface through a plasma process. The principle is to use the plasma of the process gas to convert the material to be etched from the solid phase to the gas phase, and then suck out the gas phase product through a vacuum pump. Specifically, in plasma etching, the etching gas (process gas) is first injected into the vacuum reaction chamber. When the pressure is stable, the radio frequency is used to generate a glow discharge plasma. Part of the etchant will decompose and produce free radicals after being hit by high-speed electrons. Then the free radicals diffuse to the wafer surface under the boundary layer and are adsorbed by the surface. Under the action of ion bombardment, the free radicals quickly react with the atoms or molecules on the surface to form gaseous byproducts. The volatile byproducts desorbed from the wafer surface diffuse through the boundary layer into the convective airflow and are discharged from the reaction chamber to achieve etching. In plasma etching, the selection of process parameters such as gas type, gas flow rate, heating temperature, etc. has an important influence on the etching rate. By reasonably adjusting the process parameters, such as selecting appropriate gas, adjusting gas flow rate and pressure, the etching efficiency can be effectively improved, and the etching effect and quality can be improved. In the relevant prior art, the adjustment is generally performed through the valve on the process gas delivery pipeline, and the adjustment effect is limited.

[0040] To this end, the utility model provides a gas distribution structure with adjustable process parameters, which can adjust the distribution area of ​​the process gas while adjusting the flow rate of the process gas.

[0041] Reference Figure 1 and Figure 2 The utility model discloses an adjustable process parameter gas distribution structure, comprising a chamber body 100, a gas distribution plate 300 and an opening and closing assembly, wherein a cavity 103 is arranged inside the chamber body 100, and the cavity 103 is used as a place for etching reaction. The chamber body 100 is provided with a gas inlet 200 connected with the cavity 103, so as to deliver the process gas into the cavity 103 through the gas inlet 200. The gas distribution plate 300 is detachably arranged on the inner wall of the cavity 103, and the arrangement position of the gas distribution plate 300 is opposite to the gas inlet 200, so as to cover the gas inlet 200. The gas distribution plate 300 is provided with a plurality of gas distribution holes 302, one end of the gas distribution holes 302 is connected to the gas inlet 200, and the other end is connected to the cavity 103, so that when the process gas is delivered, the gas distribution holes 302 can be used to achieve uniform distribution in the cavity 103. The opening and closing assembly is disposed on the air distribution plate 300 and is used to control the opening and closing of any air distribution hole 302 .

[0042] It can be understood that the gas distribution structure with adjustable process parameters in the utility model is provided with an opening and closing component on the gas distribution plate 300, and the opening and closing component is used to control the opening and closing of any gas distribution hole 302. When the process gas is fed into the cavity 103 through the gas inlet 200, the number of gas distribution holes 302 in the open state can be adjusted by the opening and closing component to adjust the flow rate. The gas distribution holes 302 at other positions outside the set area can also be closed by the opening and closing component, so that the process gas only enters the cavity 103 from the set area, thereby adjusting the distribution of the process gas in the cavity 103. Therefore, the gas distribution structure with adjustable process parameters in the utility model can effectively adjust the flow rate, distribution area, etc. of the process gas, realize the adjustment of the process parameters, and effectively improve the traditional method of adjusting by valves.

[0043] Reference Figure 2 , Figure 3 and Figure 6 In some embodiments of the utility model, the opening and closing component includes a sealing plate 500, which is detachably mounted on the air distribution plate 300 and is used to close the covered air distribution holes 302. In this embodiment, the air distribution holes 302 are covered and closed by installing the sealing plate 500 on the air distribution plate 300. Since the sealing plate 500 is detachably mounted, the opening and closing of the air distribution holes 302 can be switched. In an actual setting, multiple sealing plates 500 can be installed to cover and close the air distribution holes 302 at different positions at the same time, and sealing plates 500 of different sizes can be replaced to cover and close different numbers of air distribution holes 302 at the same time, so as to adjust the opening and closing of any air distribution hole 302.

[0044] Reference Figure 2 In some embodiments of the utility model, the gas distribution plate 300 is provided with a first concave cavity 301 at one end close to the gas inlet 200, and the first concave cavity 301 is located in the middle area of ​​the gas distribution plate 300, so that the gas distribution plate 300 can fit the inner wall of the cavity 103 on the peripheral side of the first concave cavity 301. The first concave cavity 301 covers the port of the gas inlet 200, thereby connecting the gas inlet 200. In addition, the gas distribution holes 302 are all distributed on the end surface of the first concave cavity 301 opposite to the gas inlet 200, thereby connecting the first concave cavity 301. When the process gas is fed into the gas inlet 200, it first enters the first concave cavity 301, then enters the gas distribution holes 302 through the first concave cavity 301, and finally enters the cavity 103. By setting the first concave cavity 301, this embodiment can achieve that all the gas distribution holes 302 are connected to the gas inlet 200, and the structure is simple.

[0045] On this basis, refer to Figure 2, the sealing plate 500 is detachably arranged in the first concave cavity 301. Specifically, the inner concave depth of the first concave cavity 301 is greater than the thickness of the sealing plate 500, and the air distribution plate 300 is provided with a plurality of threaded holes on the end face of the first concave cavity 301 opposite to the gas inlet port 200, and the threaded holes are staggered with the air distribution holes 302. The sealing plate 500 is fitted on the end face of the first concave cavity 301 by connecting the threaded holes with screws, so as to cover and close the air distribution holes 302. Since a plurality of threaded holes are provided on the air distribution plate 300, the sealing plate 500 can be moved to different positions of the first concave cavity 301 for connection and fixation, so as to cover and close the air distribution holes 302 at different positions. It is also possible to achieve the installation and fixation of multiple sealing plates 500.

[0046] Reference Figures 6 to 10 In practical applications, the sealing plate 500 can be configured as a square structure, a circular structure, an annular structure, a fan-shaped structure or other special-shaped structures. And since there is a possibility of simultaneously configuring multiple sealing plates 500, the above structures of different shapes can be configured simultaneously in a combined application manner.

[0047] Reference Figure 2 and Figure 3 In some embodiments of the present invention, the sealing plate 500 has a plurality of gas distribution holes 302 arranged uniformly in a matrix arrangement on the end surface of the first cavity 301 opposite to the gas inlet 200, and a plurality of threaded holes are arranged uniformly in a matrix arrangement, and the threaded holes are staggered with the gas distribution holes 302. This makes it convenient to install the sealing plate 500 at different positions.

[0048] Reference Figure 1 and Figure 2 In some embodiments of the utility model, the gas distribution structure with adjustable process parameters further includes a guide plate 400, which is installed between the gas distribution plate 300 and the inner wall of the cavity 103. A plurality of guide holes 403 are arranged on the guide plate 400, and the number of the guide holes 403 is less than the number of the gas distribution holes 302. The gas inlet 200 is connected to the cavity 103 through the guide holes 403 and the gas distribution holes 302. With the structural setting of this embodiment, when the process gas is introduced from the gas introduction port 200, the guide holes 403 can be used to disperse the process gas first, and then the process gas can be introduced into the cavity 103 from the gas distribution holes 302, which is conducive to ensuring the uniformity of the process gas when entering the cavity 103, avoiding the gas distribution holes 302 located close to the gas introduction port 200 from being introduced into the process gas first, and is conducive to improving the etching quality.

[0049] Specifically, refer to Figure 2 and Figure 3, a second cavity 401 is provided at one end of the guide plate 400 close to the gas inlet port 200, and the second cavity 401 is located in the middle area of ​​the guide plate 400, so that the guide plate 400 can fit the inner wall of the cavity 103 on the peripheral side of the second cavity 401, thereby achieving sealing of the peripheral side of the second cavity 401. The second cavity 401 covers the port of the gas inlet port 200 to achieve communication with the gas inlet port 200. The guide holes 403 are all distributed on the end surface of the second cavity 401 opposite to the gas inlet port 200. In this way, when the process gas is introduced from the gas inlet port 200, it can be dispersed in the second cavity 401, and then introduced through all the guide holes 403, and finally enter the cavity 103 through the gas distribution holes 302.

[0050] Reference Figure 2 and Figure 3 In some embodiments of the present invention, a third cavity 402 is provided at one end of the guide plate 400 close to the gas distribution plate 300, and the contour of the third cavity 402 covers all the gas distribution holes 302 and all the guide holes 403, so that the gas distribution holes 302 and the guide holes 403 are connected to the third cavity 402. After the process gas enters the guide holes 403 from the second cavity 401, it will enter the third cavity 402 and be dispersed to each opened gas distribution hole 302, and then enter the cavity 103, which can effectively ensure that the process gas enters different areas of the cavity 103 synchronously.

[0051] Reference Figure 1 In some embodiments of the present invention, the chamber body 100 includes a box body 101 and a cover plate 102. The box body 101 is a top-opening structure, and the cover plate 102 covers the upper end of the box body 101, thereby defining a cavity 103. The gas inlet 200 is opened at the geometric center of the cover plate 102. The gas distribution plate 300 is installed on the inner side of the cover plate 102. When it is necessary to adjust the process parameters, it is only necessary to remove the cover plate 102 first, and then install, disassemble or adjust the position of the sealing plate 500 on the gas distribution plate 300.

[0052] Reference Figures 1 to 5In some embodiments of the utility model, the gas distribution structure with adjustable process parameters includes a chamber body 100, a gas distribution plate 300, a guide plate 400 and a sealing plate 500. The chamber body 100 is formed by splicing a box body 101 and a cover plate 102. The upper end of the box body 101 is open, and the cover plate 102 is installed on the upper end of the box body 101 to enclose a sealed cavity 103. A gas inlet 200 is provided at the center of the cover plate 102. The guide plate 400 is installed at the lower end of the cover plate 102 and covers the gas inlet 200. The central area of ​​the upper end surface of the guide plate 400 is concave to set a second concave cavity 401, and the central area of ​​the lower end surface is concave to set a third concave cavity 402. The second concave cavity 401 and the third concave cavity 402 are of the same size and aligned up and down. The guide plate 400 is evenly provided with four guide holes 403 between the second concave cavity 401 and the third concave cavity 402. The air distribution plate 300 is detachably mounted on the lower end of the guide plate 400 by screws, and the upper end surface of the air distribution plate 300 is concavely provided with a first concave cavity 301, and the size of the first concave cavity 301 is consistent with and aligned with the third concave cavity 402. The air distribution plate 300 has a plurality of air distribution holes 302 arranged in a matrix at the bottom of the third concave cavity 402, and the bottom of the air distribution holes 302 is connected to connect the cavity 103. The number of air distribution holes 302 is more than 4, and the aperture of the air distribution holes 302 is smaller than the aperture of the guide hole 403. The thickness of the sealing plate 500 is less than the overall height of the first concave cavity 301 and the third concave cavity 402, and the sealing plate 500 is detachably mounted on the bottom of the first concave cavity 301 by screws to close the covered air distribution holes 302.

[0053] With the structural setting of this embodiment, the process gas is sent into the second concave cavity 401 through the gas inlet 200, and then enters the third concave cavity 402 and the first concave cavity 301 through the four guide holes 403, and finally enters the cavity 103 through the air distribution hole 302, which can effectively ensure that the process gas enters the cavity 103 evenly in the horizontal direction, and ensures that the etching speed at different positions is uniform. And by using the setting of the first concave cavity 301 and the third concave cavity 402, it can be avoided that the sealing plate 500 affects the diffusion of the process gas when blocking part of the air distribution hole 302. At the same time, the sealing plate 500 is located in the first concave cavity 301, and while closing the air distribution holes 302 at different positions, it will not affect the etching reaction, and the sealing plate 500 will not be corroded. The overall disassembly structure is adopted to facilitate subsequent cleaning.

[0054] The utility model also proposes an ion etching device, which uses the gas distribution structure with adjustable process parameters of any of the above embodiments. It can be understood that the ion etching device in the utility model can change the flow rate, flow velocity, distribution area, etc. of the process gas in the cavity 103 by opening and closing the gas distribution holes 302, thereby realizing more adjustment methods and effectively improving the shortcomings of traditional valve adjustment.

[0055] The present invention is described in detail above in conjunction with the embodiments, but the present invention is not limited to the above embodiments, and various changes can be made within the knowledge scope of ordinary technicians in the relevant technical field without departing from the purpose of the present invention.

Claims

1. A gas distribution structure with adjustable process parameters, characterized in that: include: A chamber body, wherein a cavity is arranged inside the chamber body, and a gas inlet is arranged on the chamber body; An air distribution plate, the air distribution plate being detachably connected to the inner wall of the cavity, the air distribution plate covering the gas inlet, and the air distribution plate being provided with a plurality of air distribution holes, the air distribution holes communicating with the gas inlet and the cavity; An opening and closing component is arranged on the air distribution plate, and the opening and closing component is used to control the opening and closing of any of the air distribution holes.

2. The gas distribution structure with adjustable process parameters according to claim 1, characterized in that: The opening and closing assembly includes a plurality of sealing plates, which are detachably connected to the air distribution plate and are used to close and cover the air distribution holes.

3. The gas distribution structure with adjustable process parameters according to claim 2, characterized in that: A first concave cavity connected to the gas inlet is disposed at one end of the gas distribution plate close to the gas inlet, the gas distribution holes are connected to the first concave cavity, and the sealing plate is detachably connected to the first concave cavity.

4. The gas distribution structure with adjustable process parameters according to claim 2, characterized in that: The gas distribution plate is provided with a plurality of threaded holes, and the sealing plate can be installed at different positions of the gas distribution plate by connecting the threaded holes with screws.

5. The gas distribution structure with adjustable process parameters according to claim 2, characterized in that: The sealing plate is one or more of a square structure, a circular structure, an annular structure, a fan-shaped structure or a special-shaped structure.

6. The gas distribution structure with adjustable process parameters according to claim 1, characterized in that: The gas distribution structure with adjustable process parameters also includes a guide plate, which is arranged between the gas distribution plate and the inner wall of the cavity. A plurality of guide holes are arranged on the guide plate, and the number of the guide holes is less than the number of the gas distribution holes. The gas inlet is connected to the cavity through the guide holes and the gas distribution holes.

7. The gas distribution structure with adjustable process parameters according to claim 6, characterized in that: A second cavity communicating with the gas inlet is disposed at one end of the guide plate close to the gas inlet, and the guide holes are distributed in the second cavity.

8. The gas distribution structure with adjustable process parameters according to claim 6, characterized in that: A third concave cavity is arranged at one end of the guide plate close to the air distribution plate, and the air distribution holes and the guide holes are connected to the third concave cavity.

9. The gas distribution structure with adjustable process parameters according to claim 1, characterized in that: The chamber body comprises a cover plate, the gas inlet is arranged on the cover plate, and the gas distribution plate is connected to the inner side of the cover plate.

10. An ion etching device, characterized in that: A gas distribution structure with adjustable process parameters comprising any one of claims 1 to 9.

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