Dual-electrode plasma generating device and plasma processing equipment
By adopting a dual-electrode structure and periodic power polarity conversion in the plasma generation device, the problem of plasma directly impacting the wafer/circuit board is solved, and a more uniform and efficient surface treatment effect is achieved.
Patent Information
- Application Number
- CN202421492358.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-26
- Publication Date
- 2025-05-06
- Estimated Expiration
- 2034-06-26
AI Technical Summary
Existing plasma generation devices cause plasma to directly impact the wafer/circuit board, causing damage, over-etching or over-plating.
Using a dual-electrode plasma generation device, the power supply polarity output to the first electrode and the second electrode periodically transforms the power supply polarity to the first electrode and the second electrode, so that the diffusion direction of the plasma changes from one-way to two-way, and the impact force of the plasma is buffered through the buffer section.
Effectively avoid plasma direct impact on wafer/circuit board, prevent over-etching or over-plating, and achieve a more uniform and efficient surface treatment.
Smart Images
Figure CN222839865U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of plasma processing, in particular to a double-electrode plasma generating device and plasma processing equipment. Background Art
[0002] Plasma processing equipment is a device used to perform surface treatment such as plasma etching, cleaning or deposition on the surface of a wafer or circuit board in a reaction chamber. The process gas is formed into plasma under the action of the electric field generated by the electrode through a plasma generating device. The plasma reacts with the surface of the wafer or circuit board in the reaction chamber, thereby performing surface treatment such as plasma etching, cleaning or deposition on the wafer or circuit board in the reaction chamber.
[0003] After the existing plasma generating device ionizes the process gas to form plasma, the plasma is transported from the ionization chamber of the plasma generating device to the reaction chamber. Since the plasma directly impacts the wafer / circuit board, the plasma is likely to damage the outer surface of the wafer / circuit board or over-etch or over-plate the wafer / circuit board, thereby affecting the surface treatment of the wafer or circuit board such as plasma etching, cleaning or deposition. Utility Model Content
[0004] The main purpose of the utility model is to provide a dual-electrode plasma generating device, aiming to improve the problem of damage caused by direct plasma impact on wafers / circuit boards.
[0005] To achieve the above-mentioned purpose, the dual-electrode plasma generating device proposed in the utility model comprises a shell having an air inlet passage extending along a first direction, the air inlet passage having an air inlet and an air outlet; and
[0006] An ionization device, the ionization device comprising a power supply device and a first electrode and a second electrode electrically connected to the power supply device, the power supply device being used to periodically change the polarity of power output to the first electrode and the second electrode;
[0007] The first electrode and the second electrode are disposed in the shell and are spaced apart on both sides of the air inlet passage along a second direction, the first direction intersects with the second direction, and the air inlet passage forms a buffer section between the air outlet and the first electrode and the second electrode.
[0008] In one embodiment, the buffer section is extended along a third direction of the shell.
[0009] In one embodiment, a size of the buffer segment along the first direction ranges from no less than 14 mm to no more than 17 mm.
[0010] In one embodiment, the air inlet channel also includes an air inlet section connected to the air inlet, the air inlet section is located between the air inlet and the first electrode and the second electrode, and the width of the buffer section along the second direction is greater than the width of the air inlet section along the second direction.
[0011] In one embodiment, the dual-electrode plasma generating device further comprises a first insulator and a second insulator disposed in the housing, wherein the first insulator partially wraps the first electrode, and the second insulator partially wraps the second electrode.
[0012] In one embodiment, the air inlet passage also includes an ionization section connected to the air inlet, and a first notch is provided on the side of the first insulator close to the ionization section for exposing the first electrode, and a second notch is provided on the side of the second insulator close to the ionization section for exposing the second electrode.
[0013] In one embodiment, the first insulator includes two first fixing sections disposed at two axial ends thereof, the first notch is located between the two first fixing sections, and the first fixing section surrounds and wraps around the periphery of the first electrode;
[0014] And / or, the second insulator includes two second fixing sections arranged at two axial ends thereof, the second notch is located between the two second fixing sections, and the second fixing section surrounds and wraps around the periphery of the second electrode.
[0015] In one embodiment, the shell is provided with a first electrode mounting groove and a second electrode mounting groove, the first electrode mounting groove and the second electrode mounting groove are located on both sides of the ionization section along the second direction, the first electrode is provided in the first electrode mounting groove, the second electrode is provided in the second electrode mounting groove, the first electrode mounting groove has a first opening facing the ionization section, and the second electrode mounting groove has a second opening facing the ionization section.
[0016] In one embodiment, the dual-electrode plasma generating device further includes a diffusion portion, wherein the diffusion portion is provided with a diffusion channel communicating with the gas inlet, and the diffusion portion is used to diffuse the process gas into the gas inlet channel.
[0017] The utility model also provides a plasma processing device, comprising a reaction chamber and a dual-electrode plasma generating device as described in any of the above embodiments, wherein the shell is connected to the reaction chamber, and the air inlet channel is communicated with the reaction chamber.
[0018] The technical solution of the utility model uses a power supply device to periodically change the polarity of the power supply output to the first electrode and the second electrode, so that the diffusion direction of the plasma in the reaction chamber changes from unidirectional to bidirectional, and the surface treatment of the plasma is more uniform and the treatment effect is good through periodic change. When the plasma is transported to the reaction chamber, the buffering effect of the buffer section prevents the plasma from directly impacting the wafer / circuit board, and / or prevents the plasma from over-etching or over-plating the wafer / circuit board, so that the surface treatment such as etching, cleaning or deposition of the wafer / circuit board can be achieved better and more uniformly. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying creative work.
[0020] Figure 1 A structural cross-sectional view of an embodiment of a dual-electrode plasma generating device provided by the utility model;
[0021] Figure 2 It is a structural explosion diagram of another embodiment of the dual-electrode plasma generating device provided by the utility model;
[0022] Figure 3 A schematic structural diagram of a housing, a first electrode, a second electrode, a first insulator, a second insulator and a buffer section provided by the utility model;
[0023] Figure 4 A schematic diagram of the connection between the first electrode, the second electrode, the first insulator and the second insulator provided by the utility model;
[0024] Figure 5 A cross-sectional view of a housing provided by the utility model;
[0025] Figure 6 A schematic diagram of the connection of a power module, a polarity conversion circuit, a first electrode and a second electrode according to an embodiment of the present invention;
[0026] Figure 7 This is a connection diagram of another embodiment of the power module, polarity conversion circuit, first electrode and second electrode provided by the utility model.
[0027] Description of Figure Numbers:
[0028] 1. Shell; 11. Air inlet; 12. Air outlet; 13. First electrode mounting groove; 131. First opening; 14. Second electrode mounting groove; 141. Second opening; 2. Air inlet channel; 21. Buffer section; 22. Ionization section; 3. Ionization device; 31. First electrode; 32. Second electrode; 33. Power supply device; 331. Power supply module; 332. Polarity conversion circuit; 4. Diffusion part; 41. Diffusion channel; 42. Cover; 43. First diffusion plate; 44. Second diffusion plate; 5. First insulator; 51. First fixed section; 52. First notch; 6. Second insulator; 61. Second fixed section; 62. Second notch.
[0029] The realization of the purpose, functional features and advantages of the utility model will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION
[0030] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.
[0031] It should be noted that if the embodiments of the present invention involve directional indications (such as up, down, left, right, front, back...), the directional indications are only used to explain the relative position relationship, movement status, etc. between the components in a certain specific posture. If the specific posture changes, the directional indications will also change accordingly.
[0032] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the utility model, the descriptions of "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of technical features indicated. Therefore, the features limited to "first" and "second" may explicitly or implicitly include at least one of the features. In addition, if "and / or" or "and / or" appears in the full text, its meaning includes three parallel solutions. Taking "A and / or B" as an example, it includes solution A, solution B, or solutions that satisfy both A and B. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the ability of ordinary technicians in this field to implement. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist and is not within the scope of protection required by the utility model.
[0033] Plasma processing equipment is a device used to perform plasma treatment on the surface of a wafer or circuit board in a reaction chamber. The process gas is formed into plasma under the action of the electric field generated by the electrode through a plasma generating device. The plasma reacts with the surface of the wafer / circuit board in the reaction chamber, thereby performing plasma treatment on the wafer or circuit board in the reaction chamber.
[0034] However, in the process of conceiving and implementing this application, the inventor found that there are at least the following problems:
[0035] After the existing plasma generating device ionizes the process gas to form plasma, the plasma is transported from the ionization chamber of the plasma generating device to the reaction chamber. Since the plasma directly impacts the wafer / circuit board, the plasma is likely to damage the outer surface of the wafer / circuit board or over-etch or over-plate the wafer / circuit board, thereby affecting the surface treatment of the wafer or circuit board by plasma etching, cleaning or deposition.
[0036] The utility model provides a double-electrode plasma generating device.
[0037] See also Figure 1 and Figure 2 In one embodiment of the utility model, the dual-electrode plasma generating device comprises a shell 1, the shell 1 has an air inlet channel 2 extending along a first direction, the air inlet channel 2 has an air inlet 11 and an air outlet 12; and an ionization device 3, the ionization device 3 comprises a power supply device 33 and a first electrode 31 and a second electrode 32 electrically connected to the power supply device 33, the power supply device 33 is used to periodically change the polarity of the power output to the first electrode 31 and the second electrode 32; the first electrode 31 and the second electrode 32 are arranged in the shell 1, and are arranged at intervals on both sides of the air inlet channel 2 along the second direction, the first direction intersects with the second direction, and the air inlet channel 2 forms a buffer section 21 between the air outlet 12 and the first electrode 31 and the second electrode 32.
[0038] The technical solution of the utility model uses a power supply device 33 to periodically change the polarity of the power output to the first electrode 31 and the second electrode 32, so that the diffusion direction of the plasma in the reaction chamber changes from unidirectional to bidirectional, and the surface treatment of the plasma is more uniform and the treatment effect is better through periodic change. When the plasma is transported to the reaction chamber, it is buffered by the buffer section 21, so that the plasma will not directly impact the wafer / circuit board, and / or the plasma will not over-etch or over-plate the wafer / circuit board, so that the etching, cleaning or deposition of the wafer / circuit board can be better and more uniformly achieved.
[0039] In this embodiment, the housing 1 has an air inlet channel 2 extending along a first direction, and the air inlet channel 2 has an air inlet port 11 and an air outlet port 12. The air inlet channel 2 is arranged to penetrate the housing 1 along the first direction, and the air inlet port 11 is connected to the gas source delivery device. The gas source delivery device is connected to the air inlet channel 2 through a gas passage, and is used to input process gas into the air inlet channel 2.
[0040] like Figure 6 and Figure 7 As shown, the ionization device 3 includes a power supply device 33 and a first electrode 31 and a second electrode 32 electrically connected to the power supply device 33. The power supply device 33 includes a power module 331 and a polarity conversion circuit 332. The polarity conversion circuit 332 has an input end, a first output end, and a second output end. The input end of the polarity conversion circuit 332 is connected to the output end of the power supply module 331, the first output end of the polarity conversion circuit 332 is electrically connected to the first electrode 31, and the second output end of the polarity conversion circuit 332 is electrically connected to the second electrode 32. The polarity conversion circuit 332 is used to periodically convert the polarity of the power supply output from the power supply module 331 to the first electrode 31 and the second electrode 32, so that the diffusion direction of the plasma in the reaction chamber changes from unidirectional to bidirectional. Through periodic conversion, the surface treatment efficiency of the plasma is higher, and the surface treatment of each wafer / circuit board in the reaction chamber is uniform, and the treatment effect is better.
[0041] In this embodiment, the power module 331 is used to generate a high-frequency electromagnetic field. That is, the power module 331 can be a radio frequency power supply for outputting an alternating current signal, and the polarity conversion circuit 332 is an electromagnetic coupler, and the alternating current signal can achieve polarity switching through the electromagnetic coupler. The electromagnetic coupler can be a transformer, a mutual inductor, or a rotary transformer. Of course, in other embodiments, the power module 331 can use two DC power supplies of different polarities, which are periodically switched through the switching power module 331 to supply the first electrode 31 and the second electrode 32.
[0042] The polarity conversion circuit 332 periodically converts the polarity of the power supply output to the first electrode 31 and the second electrode 32. The positive and negative polarities of the first electrode 31 and the second electrode 32 are periodically converted, which can avoid the problem of uneven surface treatment caused by a single positive and negative electrode, and further improve the uniformity of the surface treatment. This solution can be used with a solution that uses a long strip of the first electrode 31 and the second electrode 32, and is spaced apart in the horizontal direction, which can improve the ionization efficiency and the uniformity of the plasma.
[0043] In this embodiment, the first electrode 31 and the second electrode 32 are arranged in the housing 1 and are arranged at intervals on both sides of the air inlet channel 2 along the second direction. The process gas is transported between the first electrode 31 and the second electrode 32 through the air inlet channel 2, and the process gas forms plasma under the action of the electric field generated by the first electrode 31 and the second electrode 32, thereby improving the efficiency of ionization of the process gas into plasma. The first direction is consistent with the up-down direction, and the second direction is consistent with the left-right direction. The air inlet channel 2 forms a buffer section 21 between the air outlet 12 and the first electrode 31 and the second electrode 32 along the first direction, and the buffer section 21 is the distance between the bottom of the first electrode 31 and the second electrode 32 and the air outlet 12 along the first direction. Therefore, the plasma generated by the first electrode 31 and the second electrode 32 will not directly impact the wafer / circuit board under the buffering effect of the buffer section 21, resulting in excessive etching or excessive plating of the wafer / circuit board or damage to the wafer / circuit board, so that the surface treatment of etching, cleaning or deposition of the wafer / circuit board can be better and more uniformly achieved.
[0044] like Figure 3 and Figure 5 As shown, in this embodiment, the buffer section 21 is extended along the third direction of the housing 1 .
[0045] In this embodiment, the buffer section 21 is extended along the third direction of the shell 1, the first electrode 31 and the second electrode 32, so that the buffer section 21 is located just below the first electrode 31 and the second electrode 32, so that the buffer section 21 can timely buffer the impact force of the plasma and avoid direct impact of the plasma to damage the wafer / circuit board.
[0046] In this embodiment, the size of the buffer segment 21 along the first direction ranges from no less than 14 mm to no more than 17 mm.
[0047] In this embodiment, the size of the buffer section 21 along the first direction can be 14 mm, 15 mm, 16 mm, or 17 mm. Within this range, the length of the buffer section 21 can play a good buffering role while avoiding excessive attenuation of the plasma transported to the wafer / circuit board, thereby affecting the processing performance of the wafer / circuit board surface.
[0048] like Figure 1 and Figure 5 As shown, in this embodiment, the air intake channel 2 also includes an air intake section connected to the air intake port 11, the air intake section is located between the air intake port 11 and the first electrode 31 and the second electrode 32, and the width of the buffer section 21 along the second direction is greater than the width of the air intake section along the second direction.
[0049] In this embodiment, the gas inlet section may include an inlet end and an outlet end that are interconnected, the width of the inlet end is greater than the width of the outlet end, and the pressure on the process gas is increased by designing the inlet section to be tapered, thereby increasing the speed at which the process gas is transported to the first electrode 31 and the second electrode 32, so as to increase the efficiency of transporting the process gas to the first electrode 31 and the second electrode 32. By designing the width of the buffer section 21 along the second direction to be greater than the width of the inlet section along the second direction, the area of the outlet 12 is greater than the area of the outlet end, so that the plasma is more easily transported to the wafer / circuit board in the reaction chamber.
[0050] like Figure 1 , Figure 2 and Figure 4 As shown, in this embodiment, the dual-electrode plasma generating device further includes a first insulator 5 and a second insulator 6 disposed in the shell 1 , the first insulator 5 partially wraps the first electrode 31 , and the second insulator 6 partially wraps the second electrode 32 .
[0051] In this embodiment, in order to prevent the housing 1 from being charged when the first electrode 31 and the second electrode 32 are discharged, the first insulator 5 is provided to partially wrap the first electrode 31, and the second insulator 6 is provided to partially wrap the second electrode 32, so that the housing 1 is isolated from the first electrode 31 and the second electrode 32. The first electrode 31 and the second electrode 32 are partially exposed outside the first insulator 5 and the second insulator 6, so as to prevent the first electrode 31 and the second electrode 32 from being wrapped by the first insulator 5 and the second insulator 6 and affecting the ionization of the process gas.
[0052] like Figure 1 , Figure 2 and Figure 4 As shown, in this embodiment, the air inlet channel 2 also includes an ionization section 22 connected to the air inlet 11, and the side of the first insulator 5 close to the ionization section 22 is provided with a first notch 52 for exposing the first electrode 31, and the side of the second insulator 6 close to the ionization section 22 is provided with a second notch 62 for exposing the second electrode 32.
[0053] In this embodiment, the ionization section 22 is located between the air inlet section and the buffer section 21, and a first notch 52 for exposing the first electrode 31 is provided on the side of the first insulator 5 close to the ionization section 22, and a second notch 62 for exposing the second electrode 32 is provided on the side of the second insulator 6 close to the ionization section 22, so that the side of the first electrode 31 close to the ionization section 22 is exposed outside the first insulator 5, and the side of the second electrode 32 close to the ionization section 22 corresponding to the exposed outside the second insulator 6, so that the electric field generated by the first electrode 31 and the second electrode 32 can better act on the process gas, thereby improving the efficiency of the first electrode 31 and the second electrode 32 in ionizing the process gas to form plasma.
[0054] In this embodiment, the opening amplitude of the first notch 52 is set according to the diameter of the first electrode 31, and the first notch 52 is extended from the bottom toward the top of the first electrode 31, so that the exposed area of the first electrode 31 accounts for one half of the total outer surface of the first electrode 31; the opening amplitude of the second notch 62 is set according to the diameter of the second electrode 32, and the second notch 62 is extended from the bottom toward the top of the second electrode 32, so that the exposed area of the second electrode 32 accounts for one half of the total outer surface of the second electrode 32, so that the electric field generated by the first electrode 31 and the second electrode 32 can better act on the process gas, thereby improving the efficiency of the first electrode 31 and the second electrode 32 in ionizing the process gas to form plasma.
[0055] like Figure 1 , Figure 2 and Figure 4 As shown, in this embodiment, the first insulator 5 includes two first fixing sections 51 disposed at two axial ends thereof, the first notch 52 is located between the two first fixing sections 51, and the first fixing section 51 surrounds and wraps around the periphery of the first electrode 31;
[0056] And / or, the second insulator 6 includes two second fixing sections 61 disposed at two axial ends thereof, the second notch 62 is located between the two second fixing sections 61 , and the second fixing section 61 surrounds and wraps around the periphery of the second electrode 32 .
[0057] In this embodiment, the first insulator 5 is provided with two first fixing sections 51 provided at two axial ends thereof, and the first notch 52 is located between the two first fixing sections 51; the second insulator 6 is provided with two second fixing sections 61 provided at two axial ends thereof, and the second notch 62 is located between the two second fixing sections 61, so that only the portion of the first electrode 31 located at the first notch 52 is exposed outside the first insulator 5, and only the portion of the second electrode 32 located at the second notch 62 is exposed outside the second insulator 6, thereby preventing the shell 1 from being charged when the first electrode 31 and the second electrode 32 are discharged, thereby preventing the plasma from corroding the shell 1 when the first electrode 31 and the second electrode 32 are discharged, and further improving the service life of the shell 1.
[0058] like Figure 1 and Figure 5 As shown, in this embodiment, the shell 1 is provided with a first electrode mounting groove 13 and a second electrode mounting groove 14, the first electrode mounting groove 13 and the second electrode mounting groove 14 are located on both sides of the ionization section 22 along the second direction, the first electrode 31 is provided in the first electrode mounting groove 13, the second electrode 32 is provided in the second electrode mounting groove 14, the first electrode mounting groove 13 has a first opening 131 facing the ionization section 22, and the second electrode mounting groove 14 has a second opening 141 facing the ionization section 22.
[0059] In this embodiment, in order to improve the stability of the first electrode 31 and the second electrode 32 being installed on the housing 1 respectively, the housing 1 is provided with a first electrode mounting groove 13 and a second electrode mounting groove 14 located on both sides of the ionization section 22 along the second direction, the first electrode 31 is installed in the first electrode mounting groove 13, and the second electrode 32 is installed in the second electrode mounting groove 14. In order to make the first electrode 31 and the second electrode 32 partially exposed outside the first electrode mounting groove 13 and the second electrode mounting groove 14, the first electrode mounting groove 13 has a first opening 131 facing the ionization section 22, and the second electrode mounting groove 14 has a second opening 141 facing the ionization section 22. The first opening 131 and the second opening 141 are located on both sides of the ionization section 22 along the second direction, so that the process gas transported through the air inlet channel 2 can better form plasma under the action of the electric field. It should be noted that the opening size of the first opening 131 is consistent with the opening size of the first notch 52, and the opening size of the second opening 141 is consistent with the opening size of the second notch 62.
[0060] like Figure 1 As shown, in this embodiment, the dual-electrode plasma generating device further includes a diffusion portion 4 , and the diffusion portion 4 is provided with a diffusion channel 41 communicating with the gas inlet 11 , and the diffusion portion 4 is used to diffuse the process gas into the gas inlet channel 2 .
[0061] In this embodiment, the diffusion part 4 includes a cover body 42 and a diffusion component. A diffusion channel 41 is formed in the cover body 42. The diffusion component is arranged in the diffusion channel 41. The diffusion component is used to diffuse the process gas toward the air inlet channel 2. After the process gas is diffused by the diffusion component, the process gas is transported to the ionization section 22 and distributed more evenly, so that the process gas forms more plasma. Specifically, the diffusion component can be a first diffusion plate 43 and a second diffusion plate 44. A plurality of diffusion holes are arranged on the first diffusion plate 43 and the second diffusion plate 44. The first diffusion plate 43 is arranged on the side of the diffusion channel 41 away from the air inlet 11. The density of the diffusion holes on the first diffusion plate 43 is less than the density of the diffusion holes on the second diffusion plate 44.
[0062] The utility model also proposes a plasma processing device, which includes a reaction chamber and a dual-electrode plasma generating device. The specific structure of the dual-electrode plasma generating device refers to the above embodiment. Since the plasma processing device adopts all the technical solutions of all the above embodiments, it at least has all the beneficial effects brought by the technical solutions of the above embodiments, which will not be repeated here. Among them, the shell is connected to the reaction chamber, and the reaction chamber is provided with a reaction chamber for accommodating a wafer / circuit board. The air inlet channel is connected to the reaction chamber so that the plasma in the air inlet channel is transported to the outer surface of the wafer / circuit board in the reaction chamber for etching, cleaning or deposition and other surface treatments.
[0063] The above description is only an exemplary embodiment of the present invention, and does not limit the patent scope of the present invention. All equivalent structural changes made by using the contents of the present invention specification and drawings under the technical concept of the present invention, or directly / indirectly applied in other related technical fields are included in the patent protection scope of the present invention.
Claims
1. A dual-electrode plasma generating device, characterized in that: include: A housing, wherein the housing has an air inlet passage extending along a first direction, and the air inlet passage has an air inlet and an air outlet; as well as An ionization device, the ionization device comprising a power supply device and a first electrode and a second electrode electrically connected to the power supply device, the power supply device being used to periodically change the polarity of power output to the first electrode and the second electrode; The first electrode and the second electrode are disposed in the shell and are spaced apart on both sides of the air inlet passage along a second direction, the first direction intersects with the second direction, and the air inlet passage forms a buffer section between the air outlet and the first electrode and the second electrode.
2. The dual-electrode plasma generating device according to claim 1, characterized in that: The buffer section is extended along a third direction of the shell.
3. The dual-electrode plasma generating device according to claim 1, characterized in that: The size of the buffer segment along the first direction ranges from no less than 14 mm to no more than 17 mm.
4. The dual-electrode plasma generating device according to claim 1, characterized in that: The air inlet channel also includes an air inlet section connected to the air inlet, the air inlet section is located between the air inlet and the first electrode and the second electrode, and the width of the buffer section along the second direction is greater than the width of the air inlet section along the second direction.
5. The dual-electrode plasma generating device according to claim 1, characterized in that: The dual-electrode plasma generating device further includes a first insulator and a second insulator disposed in the housing, wherein the first insulator partially wraps the first electrode, and the second insulator partially wraps the second electrode.
6. The dual-electrode plasma generating device according to claim 5, characterized in that: The air inlet passage also includes an ionization section connected to the air inlet, a first notch is provided on a side of the first insulator close to the ionization section for exposing the first electrode, and a second notch is provided on a side of the second insulator close to the ionization section for exposing the second electrode.
7. The dual-electrode plasma generating device according to claim 6, characterized in that: The first insulator includes two first fixing sections arranged at two axial ends thereof, the first notch is located between the two first fixing sections, and the first fixing section surrounds and wraps around the periphery of the first electrode; And / or, the second insulator includes two second fixing sections arranged at two axial ends thereof, the second notch is located between the two second fixing sections, and the second fixing section surrounds and wraps around the periphery of the second electrode.
8. The dual-electrode plasma generating device according to claim 6, characterized in that: The shell is provided with a first electrode mounting groove and a second electrode mounting groove, the first electrode mounting groove and the second electrode mounting groove are located on both sides of the ionization section along the second direction, the first electrode is provided in the first electrode mounting groove, the second electrode is provided in the second electrode mounting groove, the first electrode mounting groove has a first opening facing the ionization section, and the second electrode mounting groove has a second opening facing the ionization section.
9. The dual-electrode plasma generating device according to claim 1, characterized in that: The dual-electrode plasma generating device further includes a diffusion portion, wherein the diffusion portion is provided with a diffusion channel communicating with the gas inlet, and the diffusion portion is used to diffuse the process gas into the gas inlet channel.
10. A plasma processing device, characterized in that: The invention comprises a reaction chamber and the dual-electrode plasma generating device according to any one of claims 1 to 9, wherein the shell is connected to the reaction chamber, and the air inlet passage is communicated with the reaction chamber.