Crystal ingot carrying mechanism for SiC single crystal growth furnace

Abstract

The utility model discloses a crystal ingot carrying mechanism for a SiC single crystal growth furnace, which comprises a C-shaped support frame and a support rod which are horizontally arranged, one end of the support rod is fixed with the C-shaped support frame, and the other end of the support rod can be horizontally and rotatably arranged on a single crystal growth furnace rack; the supporting rod is rotatably arranged on a single crystal growth furnace rack through a connecting frame, the connecting frame comprises a vertically-arranged vertical plate and two horizontally-arranged transverse plates, the two transverse plates are vertically arranged on the same side of the connecting frame in a spaced mode, through holes are formed in the two transverse plates, the other end of the supporting rod is arranged between the two transverse plates, and penetrating holes corresponding to the two through holes are formed in the supporting rod. The pin shafts penetrate through the two through holes and the through holes, and jackscrews are arranged on the corresponding pin shafts on the outer sides of the two transverse plates in a sleeving manner; limiting buffering pieces are arranged on the vertical plates corresponding to the left side and the right side of the supporting rod correspondingly so as to limit the supporting rod and enable the supporting rod to rotate between the two limiting buffering pieces. According to the utility model, the working intensity of operators can be effectively reduced, the accuracy of position adjustment and the crystal growth quality are ensured, and the safety is improved.

Description

Technical Field

[0001] The utility model belongs to the technical field of new materials, relates to silicon carbide, and particularly relates to a crystal ingot carrying mechanism for a SiC single crystal growth furnace. Background Art

[0002] With the development of energy conservation and emission reduction, new energy grid connection, and smart grid, the performance indicators and reliability requirements of power semiconductor devices in these fields are increasing day by day, requiring devices to have higher operating voltage, greater current carrying capacity, higher operating frequency, higher efficiency, higher operating temperature, stronger heat dissipation capacity and higher reliability. Therefore, the development of third-generation semiconductor materials represented by silicon carbide (SiC) has begun to receive attention.

[0003] At present, physical vapor transport (PVT) is one of the mainstream methods for preparing silicon carbide (SiC) crystals. The PVT method grows SiC single crystals. Usually, SiC crystals are placed on the top of a graphite crucible as seed crystals, and Si and C powders are placed on the bottom of a graphite crucible as source materials. An induction coil is designed for heating, and the temperature reaches about 2300°C. The growth temperature gradient is controlled, and argon gas is introduced to control the pressure in the growth chamber. During the crystal growth process, the seed crystal is attached to the top with a lower temperature, and the SiC source temperature at the bottom is higher, and there is a certain temperature gradient between the two. During the crystal growth process, the source material sublimates into a gas phase substance and crystallizes on the seed crystal at the cold end, and a SiC single crystal is obtained.

[0004] In a SiC single crystal growth furnace, the ingot carrier is an important part of the SiC single crystal growth furnace. The carrier usually includes a horizontally arranged C-shaped support frame and a support rod. The C-shaped support frame is provided with a tray for placing the ingot. One end of the support rod is fixed to the C-shaped support frame, and the other end can be horizontally rotated and arranged on the frame of the single crystal growth furnace and can be horizontally rotated into the SiC single crystal growth furnace to carry the ingot. Every time the ingot is taken out, the operator needs to operate the support rod to repeatedly adjust the position of the tray to ensure that the tray and the ingot are roughly concentric. This not only requires a high level of operator operation and increases the labor intensity of the operator, but also has low work efficiency and cannot guarantee the accuracy of position adjustment. At the same time, during the crystal growth process, the carrier rotates outward to the outside of the single crystal growth furnace. Once the carrier is accidentally touched, the carrier is at risk of damage. At the same time, the carrier will rotate toward the single crystal growth furnace, and there is a risk of colliding with the chamber transmission components to affect the crystal growth process, thereby affecting the crystal growth quality. Summary of the invention

[0005] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to provide a crystal ingot transport mechanism for a SiC single crystal growth furnace, which can effectively reduce the workload of operators, ensure the accuracy of position adjustment and crystal growth quality, and improve safety.

[0006] The technical solution of the utility model is achieved in this way:

[0007] A crystal ingot mechanism for a SiC single crystal growth furnace comprises a horizontally arranged C-shaped support frame and a support rod, wherein one end of the support rod is fixed to the C-shaped support frame and the other end can be horizontally rotatably arranged on a frame of the single crystal growth furnace.

[0008] The support rod can be rotatably arranged on the single crystal growth furnace frame through a connecting frame, and the connecting frame includes a vertical plate and two horizontally arranged horizontal plates, the two horizontal plates are arranged at an upper and lower interval on the same side of the connecting frame, the two horizontal plates are provided with through holes, the other end of the support rod is arranged between the two horizontal plates and the support rod is provided with a through hole corresponding to the two through holes, the pin shaft passes through the two through holes and the through hole, and a top screw is sleeved on the pin shaft corresponding to the outer sides of the two horizontal plates, so that the support rod can rotate around the pin shaft.

[0009] Position limiting buffers are respectively arranged on the corresponding vertical plates on the left and right sides of the support rod to limit the support rod so that the support rod can rotate between the two position limiting buffers.

[0010] Furthermore, a sensor sensing plate is provided below the support rod corresponding to one end of the connecting frame, and sensors are provided on the corresponding lower horizontal plates on the left and right sides of the support rod, respectively, for monitoring the distance between the support rod and the corresponding limit buffer.

[0011] Furthermore, it also includes an audible and visual alarm, which is connected to the sensor to facilitate audible and visual alarm according to the distance between the support rod and the limit buffer.

[0012] Furthermore, a pin shaft adjusting member is provided on the side of the upper horizontal plate for fastening the pin shaft.

[0013] Furthermore, rotating baffles are respectively provided on the corresponding lower horizontal plates on the left and right sides of the support rod, which are used to limit the support rod when it is rotated into place to prevent the support rod from rotating.

[0014] Furthermore, the rotating baffle is semicircular and vertically arranged on the edge of the lower horizontal plate, and the rotating baffle is parallel to the vertical plate.

[0015] Furthermore, a handle is provided on the support rod to facilitate operation by operators.

[0016] Compared with the prior art, the utility model has the following beneficial effects:

[0017] 1. The utility model sets limit buffers on the vertical plates corresponding to the left and right sides of the support rod, so that the support rod can only rotate in the area between the two limit buffers, thereby avoiding the support rod and the C-shaped support frame from rotating too much, performing over-limit protection, preventing damage to equipment components due to external force or improper operation of the operator, and improving safety.

[0018] 2. The utility model sets a sensor induction plate under the support rod near one end of the connecting frame, and sets sensors on the corresponding lower horizontal plates on the left and right sides of the support rod, which are connected to the sound and light alarm through the sensor, so that when the position of the C-shaped support frame is adjusted, the sound and light alarm can be used to warn the operator to avoid excessive rotation; at the same time, when the C-shaped support frame is adjusted into place, the sound and light alarm can be used to remind the operator to adjust it into place, which is beneficial to ensure the accuracy of the position adjustment of the C-shaped support frame, and at the same time is beneficial to reduce the operating level requirements and work intensity of the operator and improve work efficiency.

[0019] 3. The utility model sets rotating baffles on the corresponding lower horizontal plates on the left and right sides of the support rod. When the support rod is rotated into place (the C-shaped support frame is in place), the two rotating baffles can be rotated to limit the support rod to prevent risks caused by operator misoperation or external force factors. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 -Structural schematic diagram of the utility model Figure 1 .

[0021] Figure 2 -Structural schematic diagram of the utility model Figure 2 .

[0022] Among them: 1-connecting frame; 2-top screw; 3-support rod; 4-C-shaped support frame; 5-tray; 6-handle; 7-sensor induction plate; 8-rotating baffle; 9-limit sensor; 10-limit buffer; 11-pin shaft adjustment part.

[0023] Figure 1 and Figure 2 Schematic diagram of the structure from two different perspectives. DETAILED DESCRIPTION

[0024] The utility model is further described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0025] See also Figure 1 and Figure 2 A crystal ingot mechanism for a SiC single crystal growth furnace comprises a horizontally arranged C-shaped support frame 4 and a support rod 3, on which a graphite tray 5 is arranged for carrying the crystal ingot; one end of the support rod 3 is fixed to the C-shaped support frame 4, and the other end can be horizontally rotatably arranged on the frame of the single crystal growth furnace.

[0026] The support rod 3 is provided with a connecting frame 1, which is convenient for being rotatably set on the single crystal growth furnace frame through the connecting frame 1. The connecting frame 1 includes a vertical plate and two horizontally arranged horizontal plates. The two horizontal plates are arranged at an interval on the same side of the connecting frame. The two horizontal plates are provided with through holes. The other end of the support rod 3 is arranged between the two horizontal plates and the support rod 3 is provided with a through hole corresponding to the two through holes. The pin shaft passes through the two through holes and the through hole, and a top screw 2 is sleeved on the pin shaft corresponding to the outer side of the two horizontal plates, so that the support rod 3 can rotate around the pin shaft.

[0027] Position limiting buffers 10 are respectively provided on the corresponding vertical plates on the left and right sides of the support rod 3 to limit the support rod 3 so that the support rod 3 can rotate between the two position limiting buffers 10 .

[0028] In this way, the support rod can only rotate in the area between the two limit buffers, thereby preventing the support rod and the C-shaped support frame from rotating too much, performing over-limit protection, preventing damage to equipment components due to external force or improper operation of the operator, and improving safety.

[0029] In a specific implementation, a sensor sensing plate 7 is provided below the support rod 3 corresponding to one end of the connecting frame 1, and sensors 9 are provided on the corresponding lower horizontal plates on the left and right sides of the support rod 3, respectively, for monitoring the distance between the support rod 3 and the corresponding limit buffer 10. In a specific implementation, an audible and visual alarm (not shown in the figure) is also included, which is connected to the sensor 9, so as to provide an audible and visual alarm according to the distance between the support rod 3 and the limit buffer 10.

[0030] In this way, when adjusting the position of the C-shaped support frame, an audible and visual alarm can be used to warn the operator to avoid excessive rotation; at the same time, when the C-shaped support frame is adjusted into place, an audible and visual alarm can be used to remind the operator to adjust it into place, which is beneficial to ensure the accuracy of the position adjustment of the C-shaped support frame, and at the same time is beneficial to reduce the operator's operating level requirements and work intensity, and improve work efficiency.

[0031] Furthermore, a pin shaft adjusting member 11 is provided on the side of the upper horizontal plate for fastening the pin shaft to ensure that the support rod can smoothly rotate around the pin shaft.

[0032] In specific implementation, a rotating baffle 8 is respectively provided on the lower horizontal plate corresponding to the left and right sides of the support rod 3, which is used to limit the support rod 3 when the support rod 3 is rotated into place to prevent the support rod 3 from rotating. Specifically, the rotating baffle 8 is semicircular and vertically arranged at the edge of the lower horizontal plate, and the rotating baffle 8 is parallel to the vertical plate.

[0033] A rotating baffle is set here. When the support rod is rotated into place (the C-shaped support frame is in place), the two rotating baffles can be rotated to limit the support rod to prevent risks caused by operator misoperation or external forces.

[0034] In specific implementation, the support rod 3 is provided with a handle 6, which is convenient for operators to manually operate the support rod to rotate. In this embodiment, the handle is made of stainless steel.

[0035] Finally, it should be noted that the above embodiments of the present invention are only examples for illustrating the present invention, and are not intended to limit the implementation methods of the present invention. For ordinary technicians in the relevant field, other different forms of changes and modifications can be made based on the above description. It is impossible to list all implementation methods here. Any obvious changes or modifications derived from the technical solution of the present invention are still within the scope of protection of the present invention.

Claims

1. A crystal ingot transport mechanism for a SiC single crystal growth furnace, comprising a horizontally arranged C-shaped support frame and a support rod, one end of the support rod is fixed to the C-shaped support frame, and the other end can be horizontally rotatably arranged on the single crystal growth furnace frame, characterized in that: The support rod is rotatably arranged on the single crystal growth furnace frame through a connecting frame, and the connecting frame includes a vertical plate and two horizontal plates, the two horizontal plates are arranged at the same side of the connecting frame with an interval between the upper and lower sides, the two horizontal plates are provided with through holes, the other end of the support rod is arranged between the two horizontal plates, and the support rod is provided with a through hole corresponding to the two through holes, the pin shaft passes through the two through holes and the through hole, and a top screw is sleeved on the corresponding pin shaft on the outer side of the two horizontal plates, so that the support rod can rotate around the pin shaft; Position limiting buffers are respectively arranged on the corresponding vertical plates on the left and right sides of the support rod to limit the support rod so that the support rod can rotate between the two position limiting buffers.

2. The ingot transport mechanism for a SiC single crystal growth furnace according to claim 1, characterized in that: A sensor sensing plate is provided below the support rod corresponding to one end of the connecting frame, and sensors are provided on the corresponding lower horizontal plates on the left and right sides of the support rod, respectively, for monitoring the distance between the support rod and the corresponding limit buffer.

3. The ingot transport mechanism for a SiC single crystal growth furnace according to claim 2, characterized in that: It also includes an audible and visual alarm, which is connected to a sensor so as to provide an audible and visual alarm according to the distance between the support rod and the limit buffer.

4. The ingot transport mechanism for a SiC single crystal growth furnace according to claim 1, characterized in that: A pin shaft adjusting piece is provided on the side of the upper horizontal plate for fastening the pin shaft.

5. The ingot transport mechanism for a SiC single crystal growth furnace according to claim 1, characterized in that: Rotating baffles are respectively provided on the corresponding lower horizontal plates on the left and right sides of the support rod, which are used to limit the support rod when the support rod is rotated into place to prevent the support rod from rotating.

6. The ingot transport mechanism for a SiC single crystal growth furnace according to claim 5, characterized in that: The rotating baffle is semicircular and vertically arranged on the edge of the lower horizontal plate. The rotating baffle is parallel to the vertical plate.

7. A crystal ingot transport mechanism for a SiC single crystal growth furnace according to any one of claims 1 to 6, characterized in that: The support rod is provided with a handle to facilitate operation by operators.

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