Annealing device for gallium oxide wafer

Abstract

The utility model provides an annealing device for a gallium oxide wafer, and belongs to the technical field of semiconductors. Comprising a shell, heating plates are fixedly connected to the inner walls of the top and the bottom of the shell, a rotating shaft is rotationally connected to the inner wall of one side of the shell, one end of the rotating shaft penetrates through one side of the shell and is fixedly connected with a driven gear, and a rotating mechanism is arranged on the rotating shaft. According to the utility model, through the arrangement of the rotating mechanism, when annealing treatment needs to be carried out, a plurality of wafers are firstly placed in the second groove of the second placing table, then the second placing table slides into the first groove of the first placing table, and then the rotating shaft is rotated to drive the transmission roller to rotate and the operation is repeated; the beneficial effects of the utility model are that all wafers can be uniformly heated through the rotation of the rotating shaft without causing non-uniform temperature distribution, the wafers are prevented from being excessively heated or not reaching the temperature required by annealing, the temperature required by annealing is ensured, and the annealing can be carried out normally.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, in particular to an annealing device for gallium oxide wafers. Background Art

[0002] Gallium oxide is an important semiconductor material with low dielectric constant and high conductivity. It is widely used in electronic devices and optoelectronics. It has good thermal conductivity and chemical stability, so it is also widely used in working environments under high temperature and high pressure. When making gallium oxide wafers, the wafers need to be annealed to enhance their performance and stability.

[0003] In order to increase efficiency, existing annealing devices heat multiple wafers at the same time and then let them stand when annealing wafers. However, the temperature distribution in the device is uneven, and some parts of the wafers reach the annealing temperature earlier than other parts, resulting in some wafers being overheated and other parts of the wafers not reaching the annealing temperature required. Therefore, the present application provides an annealing device for gallium oxide wafers to meet the needs. Summary of the invention

[0004] The technical problem to be solved by the utility model is to provide an annealing device for gallium oxide wafers to solve the problem that the temperature distribution in the existing device is uneven, some parts of the wafer will reach the annealing temperature earlier than other parts, resulting in some wafers being overheated and other parts of the wafer not reaching the required annealing temperature.

[0005] In order to solve the above technical problems, the utility model provides the following technical solutions:

[0006] An annealing device for gallium oxide wafers, comprising a shell, wherein heating plates are fixedly connected to the inner walls of the top and bottom of the shell, a rotating shaft is rotatably connected to the inner wall of one side of the shell, one end of the rotating shaft passes through one side of the shell and is fixedly connected to a driven gear, a rotating mechanism is arranged on the rotating shaft, and the rotating mechanism comprises a plurality of transmission rods distributed along the outer surface circumference of the rotating shaft and fixedly connected to both sides of the rotating shaft, an L-shaped rod is sleeved on the end of the transmission rod away from the rotating shaft, and a connecting rod is fixedly connected to the end of the L-shaped rod away from the transmission rod, and the connecting point is in the middle of the connecting rod, so that The connecting rod is "C"-shaped and both ends are fixedly connected to the same first placing table, a first groove is provided on the top of the first placing table, a first through groove is provided at the bottom of the first groove and passes through the first placing table, sliding grooves are provided on both sides of the first groove, a second placing table can be installed inside the first groove, sliders are fixedly connected on both sides of the second placing table, the sliders can be slidably connected to the sliding grooves, a second groove is provided on the top of the second placing table, a second through groove is provided at the bottom of the second groove and passes through the second placing table, and multiple chips can be placed inside the second groove.

[0007] Preferably, a boss is fixedly connected to one side of the shell, a motor is clamped on the top of the boss, a driving gear is fixedly connected to the output shaft of the motor, and the driving gear is meshed with the driven gear.

[0008] Preferably, a limiting ring for limiting the position of the rotating shaft is fixedly connected to the rotating shaft, and the limiting ring is close to the driven gear and contacts the inner wall of the housing.

[0009] Preferably, a same limiting tube is provided on both sides of the top of the first placement platform and penetrates into the interior of the slide groove. The limiting tube is "n"-shaped and both ends of the limiting tube are fixedly connected to limiting blocks.

[0010] Preferably, a limiting groove is provided on the top of the slide groove, and the limiting groove is matched with the limiting block.

[0011] Preferably, two opposite sides of the shell are rotatably connected with a revolving door for closing the interior of the shell.

[0012] Compared with the prior art, the utility model has at least the following beneficial effects:

[0013] In the above scheme, by setting a rotating mechanism, when annealing treatment is needed, one side of the rotating door is opened, and multiple wafers are first placed in the second groove of the second placement table, and then the second placement table is slid into the first groove of the first placement table. After completion, the rotating shaft can be rotated to drive the transmission rod to rotate, so that the next first placement table is rotated to a position convenient for operation, and then the new second placement table with multiple wafers is slid into the interior of the new first placement table. After completion, the rotating shaft is rotated again, and the transmission rod drives the new first placement table to rotate to a position convenient for operation and repeat the operation. After all are completed, the rotating door is closed to seal the shell and start annealing. The hot plate heats the inside of the shell, and then the motor is started to rotate the active gear to drive the driven gear, thereby rotating the shaft, and the transmission rod drives the L-shaped rod and the connecting rod to rotate the first placement table. The heat of the heating plate on the top of the shell heats the top of the wafer, and the heat of the heating plate at the bottom of the shell heats the bottom of the wafer through the first through groove at the bottom of the first placement table and the second through groove at the bottom of the second placement table. The advantage of this is that all wafers can be heated evenly through the rotation of the shaft, and uneven temperature distribution will not be caused, which prevents the wafers from being overheated or failing to reach the annealing temperature required, ensures the annealing temperature required, and allows the annealing to proceed normally.

[0014] By setting a limit ring, the rotating shaft can maintain the rotating position when rotating and will not deviate from the position due to rotation. By setting a limit tube and a limit block, and allowing the limit tube to slide up and down, when the first placement table and the second placement table are slidably connected, the limit tube is lowered to allow the limit block to limit the second placement table, preventing the second placement table from sliding out of the first groove when the rotating shaft drives the first placement table to rotate, thereby ensuring the fixation of the wafer on the second placement table. By setting a limit groove, when the limit tube is lifted, the limit block will be received in the limit groove, thereby facilitating the second placement table to slide out of the first placement table and collect the wafers on the second placement table. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The accompanying drawings, which are incorporated herein and constitute a part of the specification, illustrate embodiments of the present disclosure and, together with the description, further serve to explain the principles of the present disclosure and to enable those skilled in the relevant art to make and use the present disclosure.

[0016] Figure 1 A schematic diagram of the three-dimensional structure of an annealing device for gallium oxide wafers;

[0017] Figure 2 It is a schematic diagram of a partial cross-sectional structure of the front side of an annealing device for a gallium oxide wafer;

[0018] Figure 3 It is a three-dimensional enlarged structural schematic diagram of the rotating mechanism;

[0019] Figure 4It is a schematic diagram of the three-dimensional enlarged structure of the second placement platform;

[0020] Figure 5 for Figure 2 Enlarged structural diagram at A in the middle.

[0021] [Reference Signs]

[0022] 1. Shell; 2. Rotating mechanism; 3. Boss; 4. Motor; 5. Driving gear; 6. Driven gear; 7. Rotating shaft; 8. Heating plate; 9. Transmission rod; 10. L-shaped rod; 11. Connecting rod; 12. First placement table; 13. First groove; 14. First through groove; 15. Slide; 16. Second placement table; 17. Second groove; 18. Second through groove; 19. Slider; 20. Wafer; 21. Limiting groove; 22. Limiting tube; 23. Limiting block; 24. Turntable; 25. Limiting ring.

[0023] As shown in the figure, in order to clearly implement the structure of the embodiment of the utility model, specific structures and devices are marked in the figure, but this is only for illustrative purposes and is not intended to limit the utility model to the specific structure, device and environment. According to specific needs, ordinary technicians in this field can adjust or modify these devices and environments, and the adjustments or modifications made are still included in the scope of the attached claims. DETAILED DESCRIPTION

[0024] The following is a detailed description of an annealing device for gallium oxide wafers provided by the utility model in combination with the accompanying drawings and specific embodiments. At the same time, it is explained here that in order to make the embodiments more detailed, the following embodiments are the best and preferred embodiments, and those skilled in the art may also adopt other alternative methods to implement some known technologies; and the accompanying drawings are only for more specific description of the embodiments, and are not intended to specifically limit the utility model.

[0025] It should be noted that the references to "one embodiment", "embodiment", "exemplary embodiments", "some embodiments" and the like in the specification indicate that the embodiments described may include specific features, structures or characteristics, but not every embodiment may include the specific features, structures or characteristics. In addition, when a specific feature, structure or characteristic is described in conjunction with an embodiment, it should be within the knowledge of a person skilled in the art to implement such feature, structure or characteristic in conjunction with other embodiments (whether or not explicitly described).

[0026] In general, a term can be understood, at least in part, from its use in context. For example, depending, at least in part, on the context, the term "one or more" as used herein can be used to describe any feature, structure, or characteristic in the singular sense, or can be used to describe a combination of features, structures, or characteristics in the plural sense. Additionally, the term "based on" can be understood as not necessarily intended to convey an exclusive set of factors, but can instead, depending, at least in part, on the context, allow for the presence of other factors that are not necessarily explicitly described.

[0027] It will be understood that the meaning of “on,” “over,” and “above” in this disclosure should be interpreted in the broadest manner, so that “on” means not only “directly on” something, but also includes the meaning of being “on” something with intervening features or layers therebetween, and “on” or “over” means not only “on” or “above” something, but also includes the meaning of being “on” or “above” something with no intervening features or layers therebetween.

[0028] Additionally, spatially relative terms such as "under," "beneath," "lower," "above," "upper," and the like may be used herein for descriptive convenience to describe the relationship of one element or feature to another element or features, as shown in the accompanying drawings. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the accompanying drawings. The device may be oriented in other ways, and the spatially relative descriptors used herein may be similarly interpreted accordingly.

[0029] like Figure 1-Figure 4As shown, an embodiment of the utility model provides an annealing device for gallium oxide wafers, comprising a shell 1, a heating plate 8 is fixedly connected to the inner walls of the top and bottom of the shell 1, a rotating shaft 7 is rotatably connected to the inner wall of one side of the shell 1, one end of the rotating shaft 7 passes through one side of the shell 1 and is fixedly connected to a driven gear 6, a rotating mechanism 2 is arranged on the rotating shaft 7, the rotating mechanism 2 comprises a plurality of transmission rods 9 distributed along the outer surface circumference of the rotating shaft 7 and fixedly connected to both sides of the rotating shaft 7, an L-shaped rod 10 is sleeved on the end of the transmission rod 9 away from the rotating shaft 7, a connecting rod 11 is fixedly connected to the end of the L-shaped rod 10 away from the transmission rod 9 and the connecting point is in the middle of the connecting rod 11, the connecting rod 11 is "C"-shaped and both ends are fixedly connected to the same first placement table 12, and a first groove is provided on the top of the first placement table 12 13, a first through groove 14 penetrating the first placement table 12 is provided at the bottom of the first groove 13, and slide grooves 15 are provided on both sides of the first groove 13. A second placement table 16 can be installed inside the first groove 13, and sliders 19 are fixedly connected on both sides of the second placement table 16, and the sliders 19 can be slidably connected with the slide grooves 15. A second groove 17 is provided on the top of the second placement table 16, and a second through groove 18 penetrating the second placement table 16 is provided at the bottom of the second groove 17. A plurality of wafers 20 can be placed inside the second groove 17, a boss 3 is fixedly connected to one side of the shell 1, a motor 4 is clamped on the top of the boss 3, a driving gear 5 is fixedly connected to the output shaft of the motor 4, and the driving gear 5 is meshed with the driven gear 6, and a revolving door 24 for closing the interior of the shell 1 is rotatably connected to the opposite sides of the shell 1.

[0030] By setting the rotating mechanism 2, when annealing treatment is required, open the rotating door 24 on one side, first place multiple wafers 20 in the second groove 17 on the second placement table 16, and then slide the second placement table 16 into the first groove 13 on the first placement table 12. After completion, the rotating shaft 7 can be rotated to drive the transmission rod 9 to rotate, so that the next first placement table 12 is rotated to a convenient position for operation, and then the new second placement table 16 with multiple wafers 20 is slid into the new first placement table 12. After completion, the rotating shaft 7 is rotated again, and the transmission rod 9 drives the new first placement table 12 to rotate to a convenient position for operation and repeat the operation. After all are completed, close the rotating door 24 to close the shell 1, start the heating plate 8, The interior of the shell 1 is heated, and then the motor 4 is started to rotate the driving gear 5 to drive the driven gear 6, thereby rotating the shaft 7, and the transmission rod 9 drives the L-shaped rod 10 and the connecting rod 11 to rotate the first placement table 12. The heat of the heating plate 8 on the top of the shell 1 heats the top of the wafer 20, and the heat of the heating plate 8 at the bottom of the shell 1 heats the bottom of the wafer 20 through the first through groove 14 at the bottom of the first placement table 12 and the second through groove 18 at the bottom of the second placement table 16. The advantage of this is that all the wafers 20 can be heated evenly through the rotation of the shaft 7, and uneven temperature distribution will not be caused, which prevents the wafer 20 from being overheated or failing to reach the annealing temperature required, ensures the annealing temperature required, and allows the annealing to proceed normally.

[0031] like Figure 2 , Figure 5 As shown, in this embodiment, a limiting ring 25 for limiting the rotating shaft 7 is fixedly connected to the rotating shaft 7, the limiting ring 25 is close to the driven gear 6 and contacts the inner wall of the shell 1, and the same limiting tube 22 is provided on both sides of the top of the first placement platform 12 to penetrate into the interior of the slide groove 15, the limiting tube 22 is "n" shaped and both ends of the limiting tube 22 are fixedly connected to the limiting block 23, and a limiting groove 21 is provided on the top of the slide groove 15, and the limiting groove 21 is adapted to the limiting block 23.

[0032] By setting the limiting ring 25, the rotating shaft 7 can maintain the rotating position when rotating and will not deviate from the position due to the rotation. By setting the limiting tube 22 and the limiting block 23, and allowing the limiting tube 22 to slide up and down, when the first placement table 12 and the second placement table 16 are slidably connected, the limiting tube 22 is lowered to allow the limiting block 23 to limit the second placement table 16, to prevent the second placement table 16 from sliding out of the first groove 13 when the rotating shaft 7 drives the first placement table 12 to rotate, thereby ensuring the fixation of the chip 20 on the second placement table 16. By setting the limiting groove 21, when the limiting tube 22 is lifted, the limiting block 23 will be received in the limiting groove 21, thereby facilitating the second placement table 16 to slide out of the first placement table 12 and collect the chips 20 on the second placement table 16.

[0033] The technical solution provided by the utility model is that, by setting a rotating mechanism 2, when annealing treatment is required, a rotating door 24 on one side is opened, and a plurality of wafers 20 are first placed inside the second groove 17 on the second placement table 16, and then the second placement table 16 is slid into the first groove 13 on the first placement table 12. After completion, the rotating shaft 7 can be rotated to drive the transmission rod 9 to rotate, so that the next first placement table 12 is rotated to a position convenient for operation, and then the new second placement table 16 with a plurality of wafers 20 is slid into the interior of the new first placement table 12. After completion, the rotating shaft 7 is rotated again, and the transmission rod 9 drives the new first placement table 12 to rotate to a position convenient for operation and repeat the operation. After all are completed, the rotating door 24 is closed to close the shell 1, and the shell 1 is opened. The heating plate 8 is driven to heat the inside of the shell 1, and then the motor 4 is started to rotate the driving gear 5 to drive the driven gear 6, so that the shaft 7 rotates, and the transmission rod 9 drives the L-shaped rod 10 and the connecting rod 11 to rotate the first placement table 12. The heat of the heating plate 8 on the top of the shell 1 heats the top of the wafer 20, and the heat of the heating plate 8 at the bottom of the shell 1 heats the bottom of the wafer 20 through the first through groove 14 at the bottom of the first placement table 12 and the second through groove 18 at the bottom of the second placement table 16. The advantage of this is that all the wafers 20 can be heated evenly through the rotation of the shaft 7, and uneven temperature distribution will not be caused, which prevents the wafer 20 from being overheated or failing to reach the temperature required for annealing, ensures the temperature required for annealing, and allows annealing to proceed normally.

[0034] By setting the limiting ring 25, the rotating shaft 7 can maintain the rotating position when rotating and will not deviate from the position due to the rotation. By setting the limiting tube 22 and the limiting block 23, and allowing the limiting tube 22 to slide up and down, when the first placement table 12 and the second placement table 16 are slidably connected, the limiting tube 22 is lowered to allow the limiting block 23 to limit the second placement table 16, to prevent the second placement table 16 from sliding out of the first groove 13 when the rotating shaft 7 drives the first placement table 12 to rotate, thereby ensuring the fixation of the chip 20 on the second placement table 16. By setting the limiting groove 21, when the limiting tube 22 is lifted, the limiting block 23 will be received in the limiting groove 21, thereby facilitating the second placement table 16 to slide out of the first placement table 12 and collect the chips 20 on the second placement table 16.

[0035] The present invention covers any substitution, modification, equivalent method and scheme made on the essence and scope of the present invention. In order to make the public have a thorough understanding of the present invention, specific details are described in detail in the above preferred embodiments of the present invention, and those skilled in the art can fully understand the present invention without the description of these details. In addition, in order to avoid unnecessary confusion about the essence of the present invention, well-known methods, processes, procedures, components and circuits are not described in detail.

[0036] A person skilled in the art will appreciate that all or part of the steps in the above-mentioned embodiment method can be completed by instructing related hardware through a program, and the program can be stored in a computer-readable storage medium, such as ROM / RAM, a disk, an optical disk, etc.

[0037] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principle of the present invention. These improvements and modifications should also be regarded as the protection scope of the present invention.

Claims

1. Annealing device for gallium oxide wafers, characterized in that: include: A shell (1), wherein a heating plate (8) is fixedly connected to the inner walls of the top and bottom of the shell (1), a rotating shaft (7) is rotatably connected to the inner wall of one side of the shell (1), one end of the rotating shaft (7) passes through one side of the shell (1) and is fixedly connected to a driven gear (6), a rotating mechanism (2) is arranged on the rotating shaft (7), the rotating mechanism (2) comprises a plurality of transmission rods (9) distributed along the circumference of the outer surface of the rotating shaft (7) and fixedly connected to both sides of the rotating shaft (7), an L-shaped rod (10) is sleeved on one end of the transmission rod (9) away from the rotating shaft (7), a connecting rod (11) is fixedly connected to the one end of the L-shaped rod (10) away from the transmission rod (9), and the connecting point is in the middle of the connecting rod (11), and the connecting rod (11) is "C"-shaped and fixed at both ends. The first placing platform (12) is connected to the same first placing platform (12), the first placing platform (12) is provided with a first groove (13) on the top, the first groove (13) is provided with a first through groove (14) penetrating the first placing platform (12) on the bottom, the first groove (13) is provided with a slide groove (15) on both sides, the first groove (13) can be installed inside the second placing platform (16), the second placing platform (16) is fixedly connected with a slider (19) on both sides, the slider (19) can be slidably connected with the slide groove (15), the second placing platform (16) is provided with a second groove (17) on the top, the second groove (17) is provided with a second through groove (18) penetrating the second placing platform (16) on the bottom, and a plurality of wafers (20) can be placed inside the second groove (17).

2. The annealing device for gallium oxide wafer according to claim 1, characterized in that: A boss (3) is fixedly connected to one side of the housing (1), a motor (4) is clamped on the top of the boss (3), a driving gear (5) is fixedly connected to the output shaft of the motor (4), and the driving gear (5) is meshed with the driven gear (6).

3. The annealing device for gallium oxide wafer according to claim 1, characterized in that: A limiting ring (25) for limiting the position of the rotating shaft (7) is fixedly connected to the rotating shaft (7); the limiting ring (25) is close to the driven gear (6) and contacts the inner wall of the housing (1).

4. The annealing device for gallium oxide wafer according to claim 1, characterized in that: The top two sides of the first placement platform (12) are provided with a same limiting tube (22) penetrating into the interior of the slide groove (15); the limiting tube (22) is in an "n" shape and both ends of the limiting tube (22) are fixedly connected to limiting blocks (23).

5. The annealing device for gallium oxide wafer according to claim 4, characterized in that: A limiting groove (21) is provided on the top of the slide groove (15), and the limiting groove (21) is adapted to fit the limiting block (23).

6. The annealing device for gallium oxide wafer according to claim 1, characterized in that: Two opposite sides of the shell (1) are rotatably connected to a rotating door (24) for closing the interior of the shell (1).

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