Power semiconductor device

Abstract

The utility model provides a power semiconductor device, comprising a semiconductor structure comprising a semiconductor chip, a coil structure, a first pole seat and a second pole seat, the semiconductor chip is connected between the first pole seat and the second pole seat, and the coil structure is arranged on the first pole seat; the gate pole driving energy taking unit is arranged outside the semiconductor structure and is electrically connected with the coil structure; and the current detection unit is arranged outside the semiconductor structure and is electrically connected with the coil structure. According to the technical scheme of the invention, the problem that a unit for controlling the on-off of the power semiconductor device needs external power supply in the prior art can be effectively solved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, and particularly to a power semiconductor device. Background Technique

[0002] High-voltage large-capacity power semiconductor devices are basic components for power conversion in power electronic converters, playing a key role in energy conversion and control, and enabling effective conversion and management of electrical energy. Common high-voltage large-capacity power semiconductor devices include, but are not limited to, insulated gate bipolar transistors (IGBTs), gate turn-off thyristors (GTOs), integrated gate-commutated thyristors (IGCTs), and SiC-based devices.

[0003] Current detection of high-voltage large-capacity power semiconductor devices can be used for overcurrent protection, which is of great significance for the reliable operation of high-voltage large-capacity power semiconductor devices. In the related art, to drive a unit for controlling the on / off of a power semiconductor device, an external structure is usually required for separate power supply. Summary of the Utility Model

[0004] The main object of the utility model is to provide a power semiconductor device to solve the problem that the unit for controlling the on / off of a power semiconductor device in the related art needs external power supply.

[0005] To achieve the above object, the utility model provides a power semiconductor device, including: a semiconductor structure, including a semiconductor chip, a coil structure, a first pole seat, and a second pole seat, the semiconductor chip is connected between the first pole seat and the second pole seat, and the coil structure is arranged on the first pole seat; a gate drive energy extraction unit, arranged outside the semiconductor structure and electrically connected to the coil structure; a current detection unit, arranged outside the semiconductor structure and electrically connected to the coil structure.

[0006] Further, the coil structure includes an annular metal core and coil segments, the coil segments include a first segment and a second segment, the first segment is wound around the annular metal core to form a spiral structure, the first end of the first segment forms the first end of the coil structure, the second segment is arranged on the annular metal core along the circumferential direction of the annular metal core and passes through a plurality of spiral structures, the first end of the second segment is connected to the second end of the first segment, and the second end of the second segment forms the second end of the coil structure.

[0007] Further, the center line of the coil structure coincides with the center line of the semiconductor chip.

[0008] Further, the distance between the outer edge of the coil structure and the outer edge of the first pole seat is less than or equal to half of the radius of the cross-section of the first pole seat.

[0009] Furthermore, the first pole base has a mounting ring groove for mounting the coil structure. The surface of the first pole base away from the second pole base includes a first surface and a second surface. The first surface is located inside the mounting ring groove, and the second surface is located outside the mounting ring groove. The first surface protrudes from the second surface in the direction away from the second pole base.

[0010] Furthermore, the ratio of the radius of the coil structure to the radius of the cross-section of the first pole base is greater than or equal to 0.8 and less than or equal to 1; and / or, the distance between the first surface and the second surface is greater than 0 and less than or equal to half of the diameter of the coil structure.

[0011] Furthermore, the coil structure includes a first coil and a second coil. The first coil is electrically connected to the current detection unit, and the second coil is electrically connected to the gate drive energy extraction unit.

[0012] Furthermore, the first coil and the second coil are stacked; or the first coil and the second coil are coplanar, and the first coil is located outside the second coil.

[0013] Furthermore, the power semiconductor device further includes a package shell, and the semiconductor structure is located inside the package shell.

[0014] Furthermore, the current detection unit includes an integration circuit.

[0015] Furthermore, the gate drive energy extraction unit includes a rectification and filtering circuit, an energy discharge circuit, and a DC / DC conversion circuit.

[0016] Applying the technical solution of the present utility model, the semiconductor structure includes a semiconductor chip, a coil structure, a first pole seat, and a second pole seat. The semiconductor chip provides basic functions for the power semiconductor device. The semiconductor chip is connected between the first pole seat and the second pole seat, and the first pole seat and the second pole seat are used for electrical connection with other structures. The coil structure is arranged on the first pole seat. The gate drive energy extraction unit is arranged outside the semiconductor structure and is electrically connected to the coil structure; the current detection unit is arranged outside the semiconductor structure and is electrically connected to the coil structure. With such an arrangement, according to Ampere's rule, when the power semiconductor device is turned on, the current of the power semiconductor device will generate a circular magnetic field around it; then, according to Faraday's law of electromagnetic induction, the coil structure generates an induced electromotive force in this magnetic field, and the amplitude of the induced electromotive force is proportional to the current of the power semiconductor device. Through the electrical connection between the coil structure and the gate drive energy extraction unit and the current detection unit, on the one hand, the effect of detecting the current of the power semiconductor device can be achieved by using the induced electromotive force, and on the other hand, the effect of supplying energy to the gate drive energy extraction unit can be achieved by using the induced electromotive force. In this way, the power semiconductor device of the present application can realize on-line detection of current, improve the operation reliability of the device, and at the same time supply energy to the gate drive energy extraction unit without external power supply. Therefore, the technical solution of the present application can effectively solve the problem that the unit for controlling the on-off of the power semiconductor device in the related art needs external power supply. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The accompanying drawings forming a part of this application are used to provide a further understanding of the present utility model. The schematic embodiments and descriptions thereof of the present utility model are used to explain the present utility model and do not constitute an improper limitation to the present utility model. In the drawings:

[0018] Figure 1 Shows a cross-sectional schematic view of the first embodiment of the power semiconductor device according to the present utility model;

[0019] Figure 2 Shows Figure 1 a front view schematic diagram of the coil structure of the power semiconductor device;

[0020] Figure 3 Shows Figure 2 a rear view schematic diagram of the coil structure;

[0021] Figure 4 Shows Figure 1 an enlarged schematic diagram of a part of the structure of the power semiconductor device;

[0022] Figure 5 Shows Figure 1 a logic schematic diagram of the current detection unit of the power semiconductor device;

[0023] Figure 6 shows Figure 1 a logic schematic diagram of a gate drive energy acquisition unit of a power semiconductor device;

[0024] Figure 7 shows a cross-sectional schematic diagram of a second embodiment of a power semiconductor device according to the present invention;

[0025] Figure 8 shows a cross-sectional schematic diagram of a third embodiment of a power semiconductor device according to the present invention.

[0026] Among them, the above-mentioned drawings include the following reference numerals:

[0027] h, the distance between the first surface and the second surface;

[0028] 10, semiconductor structure; 11, semiconductor chip; 12, coil structure; 121, annular metal core; 122, coil segment; 123, first segment; 124, second segment; 125, first coil; 126, second coil; 13, first pole seat; 131, first surface; 132, second surface; 133, mounting ring groove; 14, second pole seat; 15, integration circuit; 16, rectifier filter circuit; 17, energy discharge circuit; 18, DC / DC conversion circuit; 19, first molybdenum sheet; 20, second molybdenum sheet. Detailed implementation manners

[0029] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and in no way limits the present invention and its application or use. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0030] It should be noted that the terms used herein are only for describing specific implementation manners and are not intended to limit the exemplary implementation manners according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "include" and / or "comprise" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0031] Unless otherwise specifically stated, the relative arrangements, numerical expressions, and numerical values of the components and steps set forth in these embodiments do not limit the scope of the present invention. At the same time, it should be understood that for the sake of convenience of description, the dimensions of the various parts shown in the drawings are not drawn in actual proportional relationships. Technologies, methods, and devices known to those of ordinary skill in the relevant art may not be discussed in detail, but where appropriate, the said technologies, methods, and devices should be regarded as part of the description. In all the examples shown and discussed here, any specific values should be construed as merely exemplary and not as a limitation. Therefore, other examples of the exemplary embodiments may have different values. It should be noted that like reference numerals and letters denote like items in the following drawings, and thus, once an item is defined in one drawing, further discussion thereof is not required in subsequent drawings.

[0032] As Figures 1 to 4 shown, the present application provides a power semiconductor device. Embodiments of the power semiconductor device of the present application include: a semiconductor structure 10, a gate drive energy extraction unit, and a current detection unit; the semiconductor structure 10 includes a semiconductor chip 11, a coil structure 12, a first pole base 13, and a second pole base 14. The semiconductor chip 11 is connected between the first pole base 13 and the second pole base 14, and the coil structure 12 is disposed on the first pole base 13; the gate drive energy extraction unit is disposed outside the semiconductor structure 10 and is electrically connected to the coil structure 12; the current detection unit is disposed outside the semiconductor structure 10 and is electrically connected to the coil structure 12.

[0033] Applying the technical solution of this embodiment, the semiconductor structure 10 includes a semiconductor chip 11, a coil structure 12, a first pole base 13, and a second pole base 14. The semiconductor chip 11 provides basic functions for the power semiconductor device. The semiconductor chip 11 is connected between the first pole base 13 and the second pole base 14. The first pole base 13 and the second pole base 14 are used to achieve electrical connection with other structures. The coil structure 12 is disposed on the first pole base 13. The gate drive energy extraction unit is disposed outside the semiconductor structure 10 and is electrically connected to the coil structure 12. The current detection unit is disposed outside the semiconductor structure 10 and is electrically connected to the coil structure 12. With such an arrangement, according to Ampere's law, when the power semiconductor device is turned on, the current of the power semiconductor device will generate a circular magnetic field around it. Then, according to Faraday's law of electromagnetic induction, the coil structure 12 generates an induced electromotive force in this magnetic field, and the amplitude of the induced electromotive force is proportional to the current of the power semiconductor device. Through the electrical connection between the coil structure 12, the gate drive energy extraction unit, and the current detection unit, on the one hand, the effect of detecting the current of the power semiconductor device can be achieved by using the induced electromotive force, and on the other hand, the effect of supplying energy to the gate drive energy extraction unit can be achieved by using the induced electromotive force. In this way, the power semiconductor device of this embodiment can realize on-line detection of current, improve the operation reliability of the device, and at the same time supply energy to the gate drive energy extraction unit without external power supply. Therefore, the technical solution of this embodiment can effectively solve the problem that the unit for controlling the on / off of the power semiconductor device in the related art needs external power supply.

[0034] In addition, a first molybdenum sheet 19 is connected between the semiconductor chip 11 and the first pole base 13, and a second molybdenum sheet 20 is connected between the semiconductor chip 11 and the second pole base 14. It should be noted that in this embodiment, the first pole base 13 is a cathode copper electrode, and the second pole base 14 is an anode copper electrode. In addition, in other embodiments, the first pole base may also be an anode copper electrode, and the second pole base may also be a cathode copper electrode. The "pole base" refers to an electrode structure that can not only achieve electrical connection with the electrode of the semiconductor chip to conduct the semiconductor chip, but also provide a mounting basis for the semiconductor chip and the molybdenum sheet.

[0035] Such as Figure 2 And Figure 3As shown, the coil structure 12 includes an annular metal core 121 and coil segments 122. The coil segments 122 include a first segment 123 and a second segment 124. The first segment 123 is wound around the annular metal core 121 to form a spiral structure. The first end of the first segment 123 forms the first end of the coil structure 12. The second segment 124 is disposed on the annular metal core 121 along the circumferential direction of the annular metal core 121 and passes through a plurality of spiral structures. The first end of the second segment 124 is connected to the second end of the first segment 123. The second end of the second segment 124 forms the second end of the coil structure 12. Specifically, the coil segments 122 are divided into a first segment 123 and a second segment 124. The first segment 123 is wound around the annular metal core 121 for multiple turns to form a spiral structure. The spiral structure is arranged along the circumferential direction of the annular metal core 121. The second segment 124 is disposed on the annular metal core 121 along the circumferential direction of the annular metal core 121 and passes through a plurality of spiral structures. The first end of the first segment 123 forms the first end of the coil structure 12. The second end of the first segment 123 is connected to the first end of the second segment 124. The second end of the second segment 124 forms the second end of the coil structure 12. With such an arrangement, the magnetic field perpendicular to the surface can be cancelled out, playing an anti-interference role. The material for making the annular metal core 121 is selected according to the actual application situation. For low-frequency applications with low precision requirements, silicon steel sheets can be used as the material for making the annular metal core 121. For application scenarios with higher precision requirements, especially in the high-frequency case, permalloy or nanocrystalline alloy can be used as the material for making the annular metal core 121. In addition, in other embodiments, in the scenario of dynamic current measurement, a hollow core structure without an annular metal core can also be used, directly using air as the magnetic path.

[0036] As Figure 1 shown, the center line of the coil structure 12 coincides with the center line of the semiconductor chip 11. When current flows from the first pole (such as the anode) of the power semiconductor device to the second pole (such as the cathode), the power semiconductor device can be regarded as a wire. According to Ampere's rule, a circular magnetic field is generated around the power semiconductor device. The circular magnetic field is centered on the center of the power semiconductor device (that is, based on the center line of the semiconductor chip 11). Therefore, with such an arrangement, the circular magnetic field can be more completely contained inside the coil structure 12.

[0037] As Figure 1 and Figure 4As shown, the distance between the outer edge of the coil structure 12 and the outer edge of the first pole seat 13 is less than or equal to half of the radius of the cross-section of the first pole seat 13. With such a setting, the diameter of the coil structure 12 is relatively large. The coil structure 12 arranged in this way can better contain the annular magnetic field. According to the law of electromagnetic induction, the induced electromotive force generated by the coil structure 12 is proportional to the magnetic flux passing through the coil structure 12. Therefore, the induced current is closer to the true current to be measured, making the measurement more accurate. Specifically, the ratio of the radius of the coil structure 12 to the radius of the cross-section of the first pole seat 13 is greater than or equal to 0.8 and less than or equal to 1. The ratio of the radius of the coil structure 12 to the radius of the cross-section of the first pole seat 13 can be 0.8, 0.83, 0.87, 0.9, 0.92, 0.98 or 1.

[0038] As Figure 4 shown, the first pole seat 13 has an installation ring groove 133 for installing the coil structure 12. The surface of the first pole seat 13 away from the second pole seat 14 includes a first surface 131 and a second surface 132. The first surface 131 is located inside the installation ring groove 133, and the second surface 132 is located outside the installation ring groove 133. The first surface 131 protrudes from the second surface 132 in the direction away from the second pole seat 14. Specifically, in a power semiconductor device, there are usually multiple semiconductor structures 10 arranged in a stacked manner. The first pole seat 13 of the upper semiconductor structure 10 will contact the second pole seat 14 of the lower semiconductor structure 10, thereby realizing the electrical connection of adjacent semiconductor structures 10. Making the first surface 131 protrude from the second surface 132 in the direction away from the second pole seat 14 can enable the part of the first pole seat 13 of the upper semiconductor structure 10 corresponding to the first surface 131 to contact the second pole seat 14 of the lower semiconductor structure 10, while the part of the first pole seat 13 of the upper semiconductor structure 10 corresponding to the second surface 132 will not contact the second pole seat 14 of the lower semiconductor structure 10; and because the first surface 131 is located inside the installation ring groove 133, it enables the current to flow through the inside of the coil structure 12, rather than flowing from the outside of the coil structure 12. Specifically, the distance h between the first surface 131 and the second surface 132 is greater than 0 and less than or equal to half of the diameter of the coil structure 12. It should be noted that the "distance between the first surface 131 and the second surface 132" refers to the vertical distance between the first surface 131 and the second surface 132.

[0039] In addition, the filling and bonding between the coil structure 12 and the mounting ring groove 133 are achieved by pouring a material such as epoxy resin with insulation, sealing, and high bonding strength. The coil structure 12 is placed in the mounting ring groove 133, and liquid epoxy resin is filled into the mounting ring groove 133. The high bonding strength, chemical resistance, and insulation of the cured epoxy resin are used to form a reliable sealing layer, realizing the bonding between the coil structure 12 and the mounting ring groove 133. Preferably, alumina (Al 2 O 3 ) or boron nitride (BN) can be added to the epoxy resin to improve the thermal conductivity and insulation strength.

[0040] As Figure 5 shown, the current detection unit includes an integration circuit 15. Specifically, after the integration process of the integration circuit 15, the output voltage is linearly related to the measured current. In this way, it has the following advantages: First, high-frequency noise interference is eliminated. The integration circuit can effectively filter out high-frequency noise (such as switching noise or electromagnetic interference) by accumulating the area of the input signal, making the output signal smoother and more stable. Second, linearized output is achieved. When the input current signal is a pulse or square wave, the integration circuit converts the non-linear instantaneous signal into a linearly varying voltage (such as a sawtooth wave or triangular wave) through the charge and discharge characteristics of the capacitor, thereby establishing a linear relationship between the output voltage and the measured current. This linear characteristic simplifies the complexity of subsequent signal processing and improves the measurement accuracy. Third, small signal deviations are accumulated. The integration effect of the integration circuit on the input signal can accumulate small current changes, such as detecting leakage current or transient fluctuations in the detection circuit, avoiding measurement blind spots caused by too low signal amplitude. Fourth, low-frequency signal processing is supported. The low-frequency characteristics of the integration circuit make it suitable for processing power frequency or slowly varying current signals, retaining the effective low-frequency information by suppressing high-frequency components. Fifth, the system stability is enhanced. In the control loop, the integration circuit can improve the long-term stability of the system by eliminating steady-state errors (such as bias current or temperature drift).

[0041] As Figure 6 shown, the gate drive energy extraction unit includes a rectifier filter circuit 16, an energy discharge circuit 17, and a DC / DC conversion circuit 18. For the rectifier filter circuit 16, it can convert alternating current into pulsating direct current and filter out high-frequency ripples, and it has advantages such as efficient energy conversion and ripple suppression. For the energy discharge circuit 17, it is used to release the residual energy or overvoltage energy in the circuit. When the load changes suddenly or the power is cut off, the energy in the energy storage element (such as a filter capacitor) is discharged through a resistor / transistor, avoiding voltage spikes from damaging power semiconductor devices. Discharging the excess energy can reduce the system temperature rise and improve the long-term reliability. Reducing electromagnetic interference caused by energy reflection during high-frequency switching processes. For the DC / DC conversion circuit 18, it is used to adjust the DC voltage to the target value and further stabilize the voltage. Through the above multiple circuits, the output voltage has small fluctuations and high smoothness.

[0042] In addition, in this embodiment, the power semiconductor device further includes a package case, and the semiconductor structure 10 is located inside the package case. The package case is used to protect each structure of the semiconductor structure 10.

[0043] In addition, as Figure 7 shown, the present application also provides a second embodiment of the power semiconductor device. Compared with the first embodiment, the difference lies in that: the coil structure 12 includes a first coil 125 and a second coil 126. The first coil 125 is electrically connected to the current detection unit, and the second coil 126 is electrically connected to the gate drive energy extraction unit. The power semiconductor device adopting the second embodiment can also effectively solve the problem that the unit for controlling the on-off of the power semiconductor device in the related art needs external power supply. The first coil 125 and the second coil 126 are stacked. By providing the separate first coil 125 and second coil 126 and electrically connecting them to the gate drive energy extraction unit and the current detection unit respectively, the situation where the failure of one coil makes both functions unable to be realized can be avoided.

[0044] In addition, as Figure 8 shown, the present application also provides a third embodiment of the power semiconductor device. Compared with the first embodiment, the difference lies in that: the first coil 125 and the second coil 126 are coplanarly arranged, and the first coil 125 is located outside the second coil 126. The power semiconductor device adopting the third embodiment can also effectively solve the problem that the unit for controlling the on-off of the power semiconductor device in the related art needs external power supply. By providing the separate first coil 125 and second coil 126 and electrically connecting them to the gate drive energy extraction unit and the current detection unit respectively, the situation where the failure of one coil makes both functions unable to be realized can be avoided; in addition, the first coil 125 with a larger radius is more accurate for current detection.

[0045] In the description of the present utility model, it should be understood that the orientation or positional relationship indicated by orientation words such as "front, rear, upper, lower, left, right", "horizontal, vertical, perpendicular, horizontal" and "top, bottom" is usually based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present utility model and simplifying the description. Without contrary description, these orientation words do not indicate and imply that the device or element referred to must have a specific orientation or be constructed and operated in a specific orientation, so it cannot be understood as a limitation on the protection scope of the present utility model; the orientation words "inside, outside" refer to the inside and outside relative to the contour of each component itself.

[0046] For ease of description, spatial relative terms such as "above", "over", "on the upper surface", "upper" etc. can be used here to describe the spatial positional relationship of a device or feature shown in the figure with other devices or features. It should be understood that the spatial relative terms are intended to encompass different orientations in use or operation in addition to the orientation depicted in the figure for the device. For example, if the device in the attached drawing is inverted, the device described as "above" or "over" other devices or structures will then be positioned "below" or "under" other devices or structures. Thus, the exemplary term "above" can include both the orientations of "above" and "below". The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the corresponding interpretations of the spatial relative descriptions used here are made accordingly.

[0047] In addition, it should be noted that the use of terms such as "first", "second" etc. to define components is only for the convenience of differentiating the corresponding components. Without further statement, the above terms have no special meaning, and thus should not be construed as limiting the protection scope of the present utility model.

[0048] The above are only the preferred embodiments of the present utility model and are not used to limit the present utility model. For those skilled in the art, the present utility model can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present utility model shall be included within the protection scope of the present utility model.

Claims

1. A power semiconductor device, characterized in that: include: A semiconductor structure (10), comprising a semiconductor chip (11), a coil structure (12), a first pole base (13) and a second pole base (14), wherein the semiconductor chip (11) is connected between the first pole base (13) and the second pole base (14), and the coil structure (12) is arranged on the first pole base (13); A gate drive energy acquisition unit, arranged outside the semiconductor structure (10) and electrically connected to the coil structure (12); A current detection unit is arranged outside the semiconductor structure (10) and is electrically connected to the coil structure (12).

2. The power semiconductor device according to claim 1, characterized in that: The coil structure (12) comprises an annular metal core (121) and a coil segment (122); the coil segment (122) comprises a first segment (123) and a second segment (124); the first segment (123) is wound around the annular metal core (121) to form a spiral structure; a first end of the first segment (123) forms a first end of the coil structure (12); the second segment (124) is arranged on the annular metal core (121) along a circumferential direction of the annular metal core (121) and passes through a plurality of the spiral structures; a first end of the second segment (124) is connected to a second end of the first segment (123); and a second end of the second segment (124) forms a second end of the coil structure (12).

3. The power semiconductor device according to claim 1, characterized in that: The center line of the coil structure (12) coincides with the center line of the semiconductor chip (11).

4. The power semiconductor device according to claim 3, characterized in that: The distance between the outer edge of the coil structure (12) and the outer edge of the first pole seat (13) is less than or equal to half the radius of the cross section of the first pole seat (13).

5. The power semiconductor device according to claim 4, characterized in that: The first pole seat (13) has a mounting ring groove (133) for mounting the coil structure (12); a surface of the first pole seat (13) away from the second pole seat (14) comprises a first surface (131) and a second surface (132); the first surface (131) is located on the inner side of the mounting ring groove (133); the second surface (132) is located on the outer side of the mounting ring groove (133); and the first surface (131) protrudes from the second surface (132) in a direction away from the second pole seat (14).

6. The power semiconductor device according to claim 5, characterized in that: The ratio of the radius of the coil structure (12) to the radius of the cross section of the first pole seat (13) is greater than or equal to 0.8 and less than or equal to 1; and / or, The distance (h) between the first surface (131) and the second surface (132) is greater than 0 and less than or equal to half the diameter of the coil structure (12).

7. The power semiconductor device according to claim 1, characterized in that: The coil structure (12) comprises a first coil (125) and a second coil (126), wherein the first coil (125) is electrically connected to the current detection unit, and the second coil (126) is electrically connected to the gate drive energy acquisition unit.

8. The power semiconductor device according to claim 7, characterized in that: The first coil (125) and the second coil (126) are arranged in an overlapping manner; or The first coil (125) and the second coil (126) are arranged in the same plane, and the first coil (125) is located outside the second coil (126).

9. The power semiconductor device according to any one of claims 1 to 8, characterized in that: The power semiconductor device also includes a packaging shell, and the semiconductor structure (10) is located in the packaging shell.

10. The power semiconductor device according to any one of claims 1 to 8, characterized in that: The current detection unit comprises an integration circuit (15).

11. The power semiconductor device according to any one of claims 1 to 8, characterized in that: The gate drive energy acquisition unit comprises a rectifier filter circuit (16), an energy discharge circuit (17) and a DC / DC conversion circuit (18).

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