Wafer cleaning device

Abstract

The utility model discloses a wafer cleaning device, a wafer comprises a middle area and an edge area surrounding the middle area, the cleaning device is used for cleaning the edge area of the wafer, and the cleaning device comprises a carrying platform used for carrying the wafer; the cleaning turntable is arranged above the carrying table; the at least one first nozzle is arranged on the cleaning turntable, and the first nozzle is configured to spray cleaning liquid to the upper surface of the edge area so as to clean the wafer; and the at least three groups of sensor assemblies are arranged above the wafer and are used for monitoring whether the distance between the central axis of the cleaning turntable and the central axis of the wafer is within a preset range or not and judging whether the first nozzle is used for cleaning the wafer or not according to a monitoring result.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and particularly to a wafer cleaning device. Background Art

[0002] In the process of semiconductor manufacturing, it is usually necessary to perform a photolithography process on a wafer. The photolithography process generally includes photoresist coating, exposure, and development. Among them, photoresist coating is usually achieved by spin coating. Under the state where the wafer rotates, the photoresist is evenly coated on the surface of the wafer by the action of centrifugal force. During the spin coating of the photoresist, the excess photoresist will be pushed to the edge of the wafer by centrifugal force. Most of it is thrown off the wafer, but there is still a part of the excess photoresist remaining on the edge of the wafer. Since the relative velocity of the airflow at the edge of the wafer is very large, the remaining photoresist quickly solidifies, forming a raised edge. The accumulation of photoresist at the edge is likely to peel off and affect the patterns of other parts, or cause contamination, and needs to be removed immediately after the spin coating. In order to remove the photoresist accumulated on the edge of the wafer, an edge beam removal (EBR) process is usually added after the coating process to remove the photoresist on the edge of the wafer.

[0003] However, in actual production, due to the wafer deviating from the center position on the edge beamer, the actual edge cleaning effect does not match the setting, which has an adverse effect on the yield and performance of the product. Summary of the Utility Model

[0004] The present disclosure provides a wafer cleaning device. The wafer includes a middle region and an edge region surrounding the middle region. The cleaning device is used to clean the edge region of the wafer. Among them, the wafer cleaning device includes:

[0005] A stage for carrying the wafer;

[0006] A cleaning turntable disposed above the stage;

[0007] At least one first nozzle disposed on the cleaning turntable, and the first nozzle is configured to spray a cleaning liquid onto the upper surface of the edge region to clean the wafer;

[0008] At least three groups of sensor components disposed above the wafer, used to monitor whether the distance between the central axis of the cleaning turntable and the central axis of the wafer is within a preset range, and judge whether to use the first nozzle to clean the wafer according to the monitoring result.

[0009] In some embodiments, each set of the sensor components includes a light emitter and a light receiver corresponding to the light emitter. The light emitter is disposed on the cleaning turntable and evenly distributed around the central axis of the cleaning turntable, and is configured to emit detection light toward the edge of the wafer. The light receiver is configured to receive the detection light reflected by the wafer, and determines whether the distance between the central axis of the cleaning turntable and the central axis of the wafer is within the preset range by monitoring the energy of the reflected light received by the light receiver.

[0010] In some embodiments, the sensor components are configured such that when the distance between the central axis of the cleaning turntable and the central axis of the wafer is within the preset range, the irradiation points of the detection light emitted by each light emitter at least partially fall on the edge of the wafer and are reflected to the light receiver, and the energy of the reflected light received by the light receiver is greater than or equal to a preset value; when the distance between the central axis of the cleaning turntable and the central axis of the wafer is outside the preset range, the energy of the reflected light received by at least one of the light receivers is less than the preset value.

[0011] In some embodiments, a plurality of the first nozzles are disposed on the cleaning turntable, and the plurality of first nozzles are evenly distributed around the central axis of the cleaning turntable.

[0012] In some embodiments, when the first nozzles spray cleaning liquid onto the edge region of the wafer to clean the edge region of the wafer, the stage is fixed and the cleaning turntable rotates around its central axis.

[0013] In some embodiments, when the first nozzles spray cleaning liquid onto the edge region of the wafer to clean the edge region of the wafer, the cleaning turntable rotates around its central axis at a rate of 1500 to 2000 revolutions per minute.

[0014] In some embodiments, the vertical distance between the first nozzles and the wafer is between 1 cm and 5 cm, and the range of the angle between the spray trajectory of the cleaning liquid ejected from the first nozzles and the wafer plane is between 30° and 45°.

[0015] In some embodiments, the cleaning device further includes a robotic arm connected to the cleaning turntable. The robotic arm is configured such that when the distance between the central axis of the cleaning turntable and the central axis of the wafer exceeds the preset range, the robotic arm moves the cleaning turntable back and forth in a first direction and a second direction until the distance between the central axis of the cleaning turntable and the central axis of the wafer is within the preset range; wherein, the first direction and the second direction intersect, and the first direction and the second direction are parallel to the wafer plane.

[0016] In some embodiments, the cleaning device further includes at least one second nozzle disposed below the wafer, and the second nozzle is configured to spray a cleaning liquid onto the lower surface of the edge region of the wafer to clean the wafer.

[0017] In some embodiments, the stage is configured to rotate about its center when the second nozzle sprays a cleaning liquid onto the lower surface of the edge region of the wafer to clean the wafer.

[0018] The wafer cleaning device provided by the present disclosure includes: a stage for carrying a wafer; a cleaning turntable disposed above the stage; at least one first nozzle disposed on the cleaning turntable, and the first nozzle is configured to spray a cleaning liquid onto the upper surface of the edge region to clean the wafer; at least three groups of sensor assemblies disposed above the wafer, for monitoring whether the distance between the central axis of the cleaning turntable and the central axis of the wafer is within a preset range, and determining whether to use the first nozzle to clean the wafer according to the monitoring result. In the embodiments of the present disclosure, the first nozzle is disposed on the cleaning turntable, and the sensor assembly is used to monitor in real time whether the distance between the central axis of the cleaning turntable and the central axis of the wafer is within a preset range, and the preset range refers to within the allowable error range. Thus, before using the first nozzle to clean the edge region of the wafer, the position of the cleaning turntable can be adjusted in time, so as to adjust the position of the first nozzle, so that the cleaning liquid sprayed by the first nozzle can be aligned with the edge region of the wafer, ensuring that the wafer has an accurate edge cleaning width during edge cleaning and improving the edge cleaning effect.

[0019] Details of one or more embodiments of the present disclosure are set forth in the following drawings and description. Other features and advantages of the present disclosure will become apparent from the specification and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present disclosure, and for those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0021] Figure 1 is a schematic structural diagram of the cleaning device provided by the embodiments of the present disclosure;

[0022] Figure 2 is a top view schematic diagram of the cleaning device provided by the embodiments of the present disclosure;

[0023] Figure 3 is a top view schematic diagram of the wafer provided by the embodiments of the present disclosure;

[0024] Figure 4 Schematic diagram of a partial structure of the cleaning device provided by an embodiment of the present disclosure;

[0025] Figures 5a to 5b Schematic diagram when the central axis of the wafer coincides with the central axis of the cleaning turntable during wafer cleaning by the cleaning device provided by an embodiment of the present disclosure;

[0026] Figures 6a to 7b Different examples when there is an offset between the central axis of the wafer and the central axis of the cleaning turntable during wafer cleaning by the cleaning device provided by an embodiment of the present disclosure. Detailed implementation manners

[0027] Hereinafter, the exemplary embodiments disclosed in the present disclosure will be described in more detail with reference to the drawings. Although the exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the specific embodiments set forth herein. On the contrary, these embodiments are provided so that the present disclosure can be more thoroughly understood and the scope of the present disclosure can be completely conveyed to those skilled in the art.

[0028] In the following description, numerous specific details are given to provide a more thorough understanding of the present disclosure. However, it is obvious to those skilled in the art that the present disclosure can be implemented without one or more of these details. In other examples, some technical features well known to those skilled in the art are not described to avoid confusion with the present disclosure; that is, not all features of the actual embodiments are described here, and the well-known functions and structures are not described in detail.

[0029] In the drawings, for clarity, the dimensions of layers, regions, elements, and their relative dimensions may be exaggerated. The same reference numerals denote the same elements throughout.

[0030] It should be understood that when an element or layer is referred to as being "on", "adjacent to", "connected to" or "coupled to" another element or layer, it can be directly on, adjacent to, connected or coupled to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on", "directly adjacent to", "directly connected to" or "directly coupled to" another element or layer, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and / or portions, these elements, components, regions, layers and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or portion from another element, component, region, layer or portion. Thus, a first element, component, region, layer or portion discussed below may be denoted as a second element, component, region, layer or portion without departing from the teachings of the present disclosure. And when discussing a second element, component, region, layer or portion, it does not imply that a first element, component, region, layer or portion necessarily exists in the present disclosure.

[0031] Spatial relationship terms such as "under", "below", "lower", "beneath", "above", "upper", etc. are used herein for convenience in describing the relationship of one element or feature shown in the figures to other elements or features. It should be understood that, in addition to the orientation shown in the figures, spatial relationship terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figures is flipped, then an element or feature described as "under" or "beneath" or "below" another element or feature will be oriented "on" the other element or feature. Thus, the exemplary terms "under" and "below" can include both an upper and a lower orientation. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatial descriptors used herein are to be interpreted accordingly.

[0032] The purpose of the terms used herein is only to describe specific embodiments and is not a limitation of the present disclosure. As used herein, the singular forms "a", "an" and "the" are also intended to include the plural forms unless the context clearly dictates otherwise. It should also be understood that the terms "comprising" and / or "including", when used in this specification, specify the presence of the stated features, integers, steps, operations, elements and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups. As used herein, the term "and / or" includes any and all combinations of the associated listed items.

[0033] In the semiconductor manufacturing process, it is usually necessary to perform a photolithography process on a wafer. The photolithography process generally includes photoresist coating, exposure, and development. Among them, photoresist coating is usually achieved by spin coating. In the state where the wafer is rotating, the centrifugal force is used to evenly coat the photoresist on the surface of the wafer. During the spin coating of the photoresist, the excess photoresist will be pushed to the edge of the wafer by the centrifugal force. Most of it is thrown off the wafer, but there is still a part of the excess photoresist remaining on the edge of the wafer. Due to the relatively high relative velocity of the air flow at the edge of the wafer, the remaining photoresist quickly solidifies, forming a raised edge. The accumulation of photoresist at the edge is likely to peel off and affect the patterns of other parts, or cause contamination, and it needs to be removed immediately after the spin coating ends. In order to remove the photoresist accumulated on the edge of the wafer, an edge beam removal (EBR) process is usually added after the coating process to remove the photoresist on the edge of the wafer.

[0034] However, in actual production, since the wafer deviates from the center position on the edge beaming machine, the actual edge beaming effect will not match the setting, which has an adverse impact on the yield and performance of the product.

[0035] Based on this, the following technical solutions of the embodiments of the present disclosure are proposed:

[0036] The embodiments of the present disclosure provide a wafer cleaning device. The wafer includes a middle region and an edge region surrounding the middle region. The cleaning device is used to clean the edge region of the wafer. The cleaning device includes: a stage for carrying the wafer; a cleaning turntable arranged above the stage; at least one first nozzle arranged on the cleaning turntable, and the first nozzle is configured to spray a cleaning liquid onto the upper surface of the edge region to clean the wafer; at least three groups of sensor components arranged above the wafer, used to monitor whether the distance between the central axis of the cleaning turntable and the central axis of the wafer is within a preset range, and determine whether to use the first nozzle to clean the wafer according to the monitoring result.

[0037] The first nozzle provided in the embodiments of the present disclosure is arranged on the cleaning turntable, and the sensor components are used to monitor in real time whether the distance between the central axis of the cleaning turntable and the central axis of the wafer is within a preset range. This preset range refers to within the allowable error range. In this way, before using the first nozzle to clean the edge region of the wafer, the position of the cleaning turntable can be adjusted in time, so as to adjust the position of the first nozzle, so that the cleaning liquid sprayed by the first nozzle can be aligned with the edge region of the wafer, ensuring that the wafer has an accurate edge beaming width during edge beaming and improving the edge beaming effect.

[0038] The following will describe in detail the specific embodiments of the present disclosure with reference to the accompanying drawings. When describing the embodiments of the present disclosure in detail, for the convenience of description, the schematic diagrams will be enlarged locally not in accordance with the general scale, and the schematic diagrams are only examples and should not limit the protection scope of the present disclosure herein.

[0039] Figure 1 Schematic structural diagram of the cleaning device provided by an embodiment of the present disclosure; Figure 2 Top view schematic diagram of the cleaning device provided by an embodiment of the present disclosure; Figure 3 Top view schematic diagram of the wafer provided by an embodiment of the present disclosure;

[0040] Figure 4 Partial structural schematic diagram of the cleaning device provided by an embodiment of the present disclosure; Figures 5a to 5b Schematic diagram when the central axis of the wafer coincides with the central axis of the cleaning turntable during wafer cleaning by the cleaning device provided by an embodiment of the present disclosure; Figures 6a to 7b Different examples when there is an offset between the central axis of the wafer and the central axis of the cleaning turntable during wafer cleaning by the cleaning device provided by an embodiment of the present disclosure. Among them, Figure 5a 、 Figure 6a and Figure 7a are top view schematic diagrams, Figure 5b 、 Figure 6b and Figure 7b show the reflection of the detection light at the irradiation point A. Next, with reference to Figures 1 to 7b The cleaning device provided by an embodiment of the present disclosure will be further described in detail.

[0041] As Figure 3 shown, different regions on the surface of the wafer 10 include a middle region 101 and an edge region 102 surrounding the middle region 101, and the edge region 102 is annular. The cleaning device provided by an embodiment of the present disclosure is used to clean the edge region 102 of the wafer 10, such as the photoresist located in the edge region 102. Specifically, in the lithography process, when spin-coating photoresist on the edge of the wafer 10, the excess photoresist will be pushed to the edge region 102 of the wafer 10 by centrifugal force. Most of it is thrown off the wafer 10, but there is still a part of the excess photoresist remaining in the edge region 102 of the wafer 10 and quickly solidifies, forming a raised edge. The accumulation of photoresist in the edge region 102 is likely to cause peeling and affect the patterns of other parts, or cause contamination. The wafer cleaning device provided by an embodiment of the present disclosure can clean the photoresist located in the edge region 102. However, it is not limited to this. The wafer cleaning device provided by an embodiment of the present disclosure can also be used to clean other materials or contaminants located in the edge region 102.

[0042] In some embodiments, the width range of the edge region 102 is less than or equal to 3 millimeters, such as 3 millimeters, 2 millimeters, 1 millimeter.

[0043] As Figure 1 and Figure 2 shown, the cleaning device provided by an embodiment of the present disclosure includes:

[0044] A carrier stage 11 for carrying the wafer 10;

[0045] A cleaning turntable 13, which is arranged above the stage 11;

[0046] At least one first nozzle 14, which is arranged on the cleaning turntable 13 and is configured to spray cleaning liquid onto the upper surface of the edge region 102 to clean the wafer 10;

[0047] At least three groups of sensor assemblies 15, which are arranged above the wafer 10 and are used to monitor whether the distance between the central axis O2 of the cleaning turntable 13 and the central axis O1 of the wafer 10 is within a preset range, and determine whether to use the first nozzle 14 to clean the wafer 10 according to the monitoring result.

[0048] In one embodiment, the cleaning device further includes a vacuum pump (not shown), and the vacuum pump (not shown) is used to evacuate the stage 11, so as to adsorb the wafer 10 on the stage 11 and prevent the wafer 10 from being thrown off during rotation. However, it is not limited thereto. In some other embodiments, a voltage can also be applied to the stage 11 to generate polarization charges with opposite polarities on the surface of the stage 11 and the back surface of the wafer 10, so as to generate electrostatic attraction between the stage 11 and the wafer 10, thereby fixing the wafer 10 on the stage 11. In some embodiments, the cleaning device further includes a support portion 12 located below the stage 11, and the support portion 12 is used to support the stage 11.

[0049] Figure 1 and Figure 2 The shape of the cleaning turntable 13 shown in is disk-shaped, and the first nozzle 14 is arranged at the edge position of the lower surface of the cleaning turntable 13. However, it is not limited thereto. The shape of the cleaning turntable 13 can also be cylindrical, polygonal prism-shaped, conical, etc.; the first nozzle 14 can also be arranged on the side surface of the cleaning turntable 13 or other areas of the lower surface of the cleaning turntable 13.

[0050] In one embodiment, each first nozzle 14 is correspondingly connected to a pipeline (not shown), and the pipeline (not shown) is used to supply cleaning liquid to the first nozzle 14; wherein, the pipeline (not shown) can be arranged on the surface of the cleaning turntable 13 or inside the cleaning turntable 13. However, it is not limited thereto. In some other embodiments, the inside of the cleaning turntable 13 has a cavity (not shown), and the cavity (not shown) is used to store cleaning liquid, and the first nozzle 14 is communicated with the cavity (not shown).

[0051] In actual operation, when the wafer 10 is cleaned using the first nozzle 14, the wafer 10 and the cleaning turntable 13 rotate relative to each other. In this way, the first nozzle 14 can clean the entire edge region 102 of the wafer 10. In actual operation, when the distance between the central axis O2 of the cleaning turntable 13 and the central axis O1 of the wafer 10 is within a preset range, the cleaning liquid ejected from the first nozzle 14 can be sprayed onto the edge region 102 of the wafer 10; when there is an offset outside the preset range between the central axis O2 of the cleaning turntable 13 and the central axis O1 of the wafer 10, the cleaning liquid sprayed by the first nozzle 14 may be sprayed onto the middle region 101 of the wafer 10 or onto an area outside the wafer 10, which may cause the actual edge cleaning effect to deviate from the setting, and have an adverse impact on the yield and performance of the product. Therefore, in the embodiments of the present disclosure, before the wafer 10 is cleaned using the first nozzle 14, the sensor assembly 15 is used to monitor whether the distance between the central axis O2 of the cleaning turntable 13 and the central axis O1 of the wafer 10 is within the preset range.

[0052] As Figure 1 and Figure 2 shown, in one embodiment, each set of sensor assemblies 15 includes a light emitter 151 and a light receiver 152 corresponding to the light emitter 151. The light emitter 151 is disposed on the cleaning turntable 13 and is evenly distributed around the central axis O2 of the cleaning turntable 13, and is used to emit detection light 153 towards the edge of the wafer 10. The light receiver 152 is used to receive the detection light 153 reflected by the wafer 10, and determines whether the distance between the central axis O2 of the cleaning turntable 13 and the central axis O1 of the wafer 10 is within the preset range by monitoring the energy of the reflected light received by the light receiver 152.

[0053] Figure 1 and Figure 2 shown, the light emitter 151 is disposed at the edge position of the lower surface of the cleaning turntable 13. However, it is not limited thereto, and the light emitter 151 can also be disposed on the side surface of the cleaning turntable 13 or other areas of the lower surface of the cleaning turntable 13.

[0054] In one embodiment, the sensor assembly 15 is configured such that when the distance between the central axis O2 of the cleaning turntable 13 and the central axis O1 of the wafer 10 is within a preset range, the irradiation points of the detection light 153 emitted by each light emitter 151 at least partially fall on the edge of the wafer 10 and are reflected to the light receiver 152, and the energy of the reflected light received by the light receiver 152 is greater than or equal to a preset value; when the distance between the central axis O2 of the cleaning turntable 13 and the central axis O1 of the wafer 10 is outside the preset range, the energy of the reflected light received by at least one light receiver 152 is less than the preset value. Thus, it is possible to determine whether the distance between the central axis O2 of the cleaning turntable 13 and the central axis O1 of the wafer 10 is within the preset range by monitoring the value of the energy of the reflected light received by the light receiver 152.

[0055] When the detection light 153 emitted by the light emitter 151 completely falls within the plane of the wafer 10 and is reflected to the light receiver 152, the energy of the reflected light received by the light receiver 152 at this time is defined as E, and the preset value can be a certain value between 0 and E. Next, taking the example of arranging 3 light emitters 151 equidistantly on the cleaning turntable 13, the monitoring method will be specifically described in combination with Figures 5a to 7b this.

[0056] As Figure 5a shown, when the central axis O2 of the cleaning turntable 13 coincides exactly with the central axis O1 of the wafer 10, the detection light 153 emitted by the light emitter 151 has three irradiation points on the wafer 10, namely irradiation point A, irradiation point B, and irradiation point C. The irradiation points A, B, and C completely fall on the surface of the wafer 10 and are evenly distributed around the central axis O1 of the wafer 10. At this time, as Figure 5b shown, the detection light 153 emitted by the three light emitters 151 is all reflected to the light receiver 152.

[0057] As Figure 6a shown, when the cleaning turntable 13 has an offset relative to the central axis O1 of the wafer 10 in the direction of irradiation point A and the offset is within the preset range, part of irradiation point A falls on the surface of the wafer 10 and part falls outside the wafer 10. At this time, as Figure 6b shown, the energy of the reflected light received by the light receiver 152 corresponding to irradiation point A is still greater than or equal to the preset value.

[0058] As Figure 7a shown, when the cleaning turntable 13 has an offset relative to the central axis O1 of the wafer 10 in the direction of irradiation point A and the offset is outside the preset range, irradiation point A will partially or completely fall outside the surface of the wafer 10. At this time, as Figure 7bAs shown, the optical receiver 152 corresponding to the irradiation point A cannot receive the reflected light or the energy of the received reflected light is less than a preset value. Thus, the cleaning device provided by the embodiments of the present disclosure can determine whether the distance between the central axis O2 of the cleaning turntable 13 and the central axis O1 of the wafer 10 is within a preset range by monitoring the energy of the reflected light received by the optical receiver 152.

[0059] However, it is not limited thereto. In some other embodiments, the preset value can also be 0, that is, when at least one optical receiver 152 cannot receive the reflected light at all, it is determined that the distance between the central axis O2 of the cleaning turntable 13 and the central axis O1 of the wafer 10 exceeds the preset range; or, the preset value can also be E, that is, when at least part of the irradiation point of the detection light 153 falls outside the plane of the wafer 10 and the energy received by the corresponding optical receiver 152 is less than E, it is determined that the distance between the central axis O2 of the cleaning turntable 13 and the central axis O1 of the wafer 10 exceeds the preset range.

[0060] Here, setting the preset range means that there can be an offset within the allowable error range between the central axis O2 of the cleaning turntable 13 and the central axis O1 of the wafer 10. Within this error range, the first nozzle 14 can be used to clean the edge region 102 of the wafer 10. In some embodiments, the preset range is 0 - 0.5 mm. When the distance between the central axis O2 of the cleaning turntable 13 and the central axis O1 of the wafer 10 is between 0 and 0.5 mm, the wafer 10 is cleaned; when the distance between the central axis O2 of the cleaning turntable 13 and the central axis O1 of the wafer 10 is greater than 0.5 mm, the position of the cleaning turntable 13 needs to be adjusted. However, it is not limited thereto. The preset range can also be 0 - 0.1 mm, 0 - 0.2 mm, 0 - 0.3 mm, 0 - 0.4 mm, etc.

[0061] It can be understood that, according to the diameter of the wafer 10, and by adjusting the distance between the light emitter 151 and the surface of the wafer 10, the distance between the light emitter 151 and the central axis O2 of the cleaning turntable 13, and the angle between the detection light 153 and the horizontal direction, when the central axis O2 of the cleaning turntable 13 coincides exactly with the central axis O1 of the wafer 10, the irradiation points of the detection light 153 fall on the edge of the wafer 10 and are evenly distributed around the central axis O1 of the wafer 10, and the irradiation points are tangent to the boundary of the wafer 10 or the minimum distance between the irradiation points and the boundary of the wafer 10 is within the allowable error range, such as 0.5 mm, 0.4 mm, 0.3 mm, 0.2 mm, 0.1 mm, etc.

[0062] Figure 2 and Figures 5a to 7bThe cleaning device shown in the figure is provided with 3 groups of sensor components 15, but it is not limited to this. More groups of sensor components 15 can also be provided, such as 4 groups, 5 groups, 6 groups, 7 groups, 8 groups, 10 groups, etc. In this way, the offset direction of the cleaning turntable 13 relative to the central axis O1 of the wafer 10 can be judged more accurately, which is convenient for adjusting the position of the cleaning turntable 13 subsequently.

[0063] In actual operation, when the distance between the central axis O2 of the cleaning turntable 13 and the central axis O1 of the wafer 10 is outside the preset range, the position of the cleaning turntable 13 needs to be adjusted until the distance between the central axis O2 of the cleaning turntable 13 and the central axis O1 of the wafer 10 is within the preset range.

[0064] Specifically, as Figure 1 shown, the cleaning device further includes a robotic arm 17. The robotic arm 17 is connected to the cleaning turntable 13 and is configured such that when the distance between the central axis O2 of the cleaning turntable 13 and the central axis O1 of the wafer 10 exceeds the preset range, the robotic arm 17 moves the cleaning turntable 13 back and forth along the first direction X and the second direction Y until the distance between the central axis O2 of the cleaning turntable 13 and the central axis O1 of the wafer is within the preset range; wherein, the first direction X and the second direction Y intersect, and the first direction X and the second direction Y are parallel to the plane of the wafer 10. Here, the first direction X and the second direction Y are perpendicular or obliquely intersecting with each other. In some embodiments, the cleaning device further includes a connecting portion 16 for connecting the cleaning turntable 13 and the robotic arm 17.

[0065] In actual operation, the offset direction of the cleaning turntable 13 relative to the central axis O1 of the wafer 10 can be judged according to the energy of the reflected light received by the photoreceivers 152 at different positions, and the robotic arm 17 can be controlled to move the cleaning turntable 13 according to the judgment result. Taking Figure 7a the structure shown as an example, the energy of the reflected light received by the photoreceiver 152 corresponding to the irradiation point A is less than the predetermined value, indicating that the cleaning turntable 13 is offset relative to the central axis O1 of the wafer 10 towards the irradiation point A. Therefore, the cleaning turntable 13 should be moved in the opposite direction, and during the movement of the cleaning turntable 13, the energy of the reflected light received by multiple photoreceivers 152 should be continuously monitored, and the moving direction of the cleaning turntable 13 should be adjusted at any time according to the monitoring result until the distance between the central axis O2 of the cleaning turntable 13 and the central axis O1 of the wafer 10 is within the preset range.

[0066] In some embodiments, the cleaning device 13 further includes a control system (not shown) connecting the sensor components 15 and the robotic arm 17. The control system (not shown) is configured to judge the offset direction of the cleaning turntable 13 relative to the central axis O1 of the wafer 10 according to the energy of the reflected light received by the photoreceivers 152 at different positions, and control the robotic arm 17 to move the cleaning turntable 13 according to the judgment result.

[0067] It should be noted that Figure 1 the robotic arm 17 in

[0068] is only for illustration. Any mechanical structure that can move the cleaning turntable 13 can be used as the robotic arm 17 in the embodiments of the present disclosure.

[0069] When the distance between the central axis O2 of the cleaning turntable 13 and the central axis O1 of the wafer 10 is within a preset range, the first nozzle 14 is used to clean the wafer 10. In one embodiment, when the first nozzle 14 sprays the cleaning liquid onto the edge region 102 of the wafer 10 to clean the edge region 102 of the wafer 10, the carrier 11 remains stationary, and the cleaning turntable 13 rotates around its central axis O2. In this way, during the cleaning process, the wafer 10 is prevented from being swung by the carrier 11, resulting in an offset between the central axis O1 of the wafer 10 and the central axis O2 of the cleaning turntable 13.

[0070] In one embodiment, a plurality of first nozzles 14 are provided on the cleaning turntable 13. The plurality of first nozzles 14 are evenly distributed around the central axis O2 of the cleaning turntable 13. Providing a plurality of first nozzles 14 on the cleaning turntable 13 can improve the cleaning efficiency, and the uniform distribution of the plurality of first nozzles 14 can improve the uniformity of edge cleaning. Figure 2 As shown in

[0071] in Figure 4As shown, in one embodiment, the vertical distance between the first nozzle 14 and the wafer 10 is between 1 cm and 5 cm (including the end values), such as 2 cm, 3 cm, 4 cm, etc. The range of the angle θ between the spraying trajectory of the cleaning liquid ejected from the first nozzle 14 and the plane of the wafer 10 is between 30° and 45° (including the end values), for example, 33°, 35°, 37°, 40°, 42°, etc. In this way, the spraying direction of the cleaning liquid is inclined to the surface of the wafer 10, which can avoid or reduce the splashing of the cleaning liquid.

[0072] In the photoresist process, the photoresist may also be spun onto the lower surface of the edge region 102 of the wafer 10. As Figure 1 shown, in one embodiment, the cleaning device further includes at least one second nozzle 18 disposed below the wafer 10. The second nozzle 18 is configured to spray the cleaning liquid onto the lower surface of the edge region 102 of the wafer 10 to clean the wafer 10. In some embodiments, the stage 11 is configured to rotate around its center when the second nozzle 18 sprays the cleaning liquid onto the lower surface of the edge region 102 of the wafer 10 to clean the wafer 10. In actual operation, the rotation of the stage 11 may cause the wafer 10 to shift. Therefore, after cleaning the upper surface of the edge region 102 of the wafer 10 with the first nozzle 14, the lower surface of the edge region 102 of the wafer 10 can be cleaned with the second nozzle 18, and the size of the outlet of the second nozzle 18 can be increased to increase the spraying area of the second nozzle 18. In this way, even if the centers of the wafer 10 and the stage 11 are not aligned, the second nozzle 18 can fully clean the lower surface of the wafer 10.

[0073] In some embodiments, a plurality of second nozzles 18 can be disposed below the wafer 10 to improve the cleaning efficiency, and the inclination angle of the second nozzle 18 can be adjusted so that the range of the angle between the spraying trajectory of the cleaning liquid ejected from the second nozzle 18 and the plane of the wafer 10 is between 30° and 45° (including the end values), for example, 33°, 35°, 37°, 40°, 42°, etc., to avoid or reduce the splashing of the cleaning liquid.

[0074] It should be noted that the above are only optional embodiments of the present disclosure and are not used to limit the protection scope of the present disclosure. Any modifications, equivalent replacements, and improvements made within the spirit and principle of the present disclosure shall be included in the protection scope of the present disclosure.

Claims

1. A wafer cleaning device, wherein the wafer includes a middle region and an edge region surrounding the middle region, and the cleaning device is used to clean the edge region of the wafer. Characterized in that, The cleaning device includes: A stage for carrying the wafer; A cleaning turntable disposed above the stage; At least one first nozzle disposed on the cleaning turntable, and the first nozzle is configured to spray a cleaning liquid onto the upper surface of the edge region to clean the wafer; At least three groups of sensor components disposed above the wafer, for monitoring whether the distance between the central axis of the cleaning turntable and the central axis of the wafer is within a preset range, and determining whether to use the first nozzle to clean the wafer according to the monitoring result.

2. The cleaning device according to claim 1, Characterized in that, Each group of the sensor components includes a light emitter and a light receiver corresponding to the light emitter. The light emitter is disposed on the cleaning turntable and evenly distributed around the central axis of the cleaning turntable, and is used to emit detection light to the edge of the wafer. The light receiver is used to receive the detection light reflected by the wafer, and determines whether the distance between the central axis of the cleaning turntable and the central axis of the wafer is within the preset range by monitoring the energy of the reflected light received by the light receiver.

3. The cleaning device according to claim 2, Characterized in that, The sensor component is configured such that when the distance between the central axis of the cleaning turntable and the central axis of the wafer is within the preset range, at least part of the irradiation point of the detection light emitted by each light emitter falls on the edge of the wafer and is reflected to the light receiver, and the energy of the reflected light received by the light receiver is greater than or equal to a preset value; when the distance between the central axis of the cleaning turntable and the central axis of the wafer is outside the preset range, the energy of the reflected light received by at least one of the light receivers is less than the preset value.

4. The cleaning device according to claim 1, Characterized in that, A plurality of the first nozzles are disposed on the cleaning turntable, and the plurality of first nozzles are evenly distributed around the central axis of the cleaning turntable.

5. The cleaning device according to claim 1, Characterized in that, When the first nozzle sprays the cleaning liquid onto the edge region of the wafer to clean the edge region of the wafer, the stage is fixed and the cleaning turntable rotates around its central axis.

6. The cleaning device according to claim 1, Characterized in that, The vertical distance between the first nozzle and the wafer is between 1 cm and 5 cm, and the range of the angle between the spraying trajectory of the cleaning liquid ejected by the first nozzle and the wafer plane is between 30° and 45°.

7. The cleaning device according to claim 1, Characterized in that, The cleaning device further includes a robotic arm, which is connected to the cleaning turntable. The robotic arm is configured to move the cleaning turntable back and forth along a first direction and a second direction; wherein, the first direction and the second direction intersect, and the first direction and the second direction are parallel to the wafer plane.

8. The cleaning device according to claim 1, wherein, the cleaning device further includes at least one second nozzle disposed below the wafer. The second nozzle is configured to spray a cleaning liquid onto the lower surface of the edge region of the wafer to clean the wafer.

9. The cleaning device according to claim 8, wherein, the stage is configured to rotate about its center when the second nozzle sprays the cleaning liquid onto the lower surface of the edge region of the wafer to clean the wafer.

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