Heat treatment device

Abstract

The utility model provides a heat treatment device. The heat treatment device comprises a process chamber; the supporting ring is arranged in the process chamber, the supporting ring comprises a ring body, a first surface of the ring body is used for supporting a wafer, the first surface is provided with a limiting part, the limiting part is provided with a gap pair, and the gap pair is distributed in a central symmetry manner relative to the center of the ring body; the light source generator and the light source receiver are arranged in the process chamber and are distributed in a central symmetry manner relative to the center of the ring body; the light source generator is used for emitting a light source, and the light source receiver is used for receiving the light source and giving an alarm when the light source is not received. According to the heat treatment device provided by the invention, the probability of position deviation of wafer placement can be reduced, so that the heating uniformity of the wafer in the processing process is ensured.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a heat treatment device. Background Art

[0002] In the semiconductor manufacturing process, Rapid Thermal Processing (RTP) has the advantages of fast heating and cooling rates, good uniformity, and precise control of thermal budget. For example, the wafer can be heated at a heating rate of 40 to 250°C / second. It is mainly used in rapid thermal annealing, rapid thermal oxidation, the formation of metal silicide, and rapid thermochemical deposition.

[0003] With the development of the semiconductor industry, the requirements for wafer temperature uniformity when processing wafers are increased. For example, a very small temperature gradient of 0 to 5 mm from the edge to the center of the wafer is required, and the wafer is required to be heated at a temperature between about 500°C and about 1150°C with a temperature error of about 0.5°C to 1.5°C.

[0004] However, in the prior art, it is difficult for the RTP equipment system to achieve the uniformity required above near the edge of the wafer. Figure 1 On the support ring 10 shown in FIG. 1 , the bottom of the wafer 20 contacts the surface of the support ring 10 , and the transfer stability of the robot is poor. Figure 2 As shown, the placement position of the wafer 20 may deviate from the set position (the dotted line in the figure is the set position of the wafer 20), so that the center of the wafer 20 is inconsistent with the center of the support ring 10, and the contact area between different positions at the edge of the wafer 20 and the support ring 10 is different. Due to the effect of heat conduction, the edge of the wafer 10 will absorb heat unevenly, resulting in temperature differences in different areas of the wafer 10. These temperature differences will affect the ion diffusion and lattice repair of different areas of the wafer, thereby affecting the electrical properties of the wafer.

[0005] Therefore, it is necessary to develop a heat treatment device to ensure that the wafer is in a set area, thereby reducing the temperature difference between different areas of the wafer during the processing process. Utility Model Content

[0006] The purpose of the present application is to provide a heat treatment device to reduce the probability of position deviation of wafer placement, thereby ensuring uniform heating of the wafer during processing.

[0007] A heat treatment device comprises: a process chamber; a support ring arranged in the process chamber, the support ring comprising a ring body, the first surface of the ring body being used to support a wafer, the first surface being provided with a limiting portion, the limiting portion being provided with a pair of notches, the pair of notches being centrally symmetrically distributed about the center of the ring body; a light source generator and a light source receiver, the light source generator and the light source receiver being arranged inside the process chamber and centrally symmetrically distributed about the center of the ring body; the light source generator being used to emit a light source, the light source receiver being used to receive the light source and issuing an alarm when the light source is not received.

[0008] In some embodiments, the supporting ring further includes a limiting portion, and a slope is provided on a side of the limiting portion facing the center of the ring body.

[0009] In some embodiments, the distance between the bottom edge of the limiting portion facing the center of the ring body and the inner edge of the ring body is 1 to 2.5 mm.

[0010] In some embodiments, the angle between the slope and the first surface is 50° to 70°.

[0011] In some embodiments, the limiting portion is annular and is coaxially arranged with the ring body.

[0012] In some embodiments, the heat treatment device further includes: a controller, the controller is electrically connected to the light source generator and the light source receiver, and is used to control the switching of the light source generator and the light source receiver.

[0013] In some embodiments, the heat treatment apparatus further includes a heating source located in the process chamber and configured to heat the first surface of the wafer in the process chamber.

[0014] In some embodiments, the heat treatment device further includes a reflection plate, which is located on a side of the wafer away from the heating source and is used to heat the second side of the wafer.

[0015] In some embodiments, the heat treatment device further includes a supporting bracket and a power mechanism, wherein the supporting bracket is used to support the supporting ring, and the power mechanism is connected to the supporting bracket to drive the supporting bracket to rotate.

[0016] In some embodiments, the power mechanism includes a magnetic suspension drive device disposed outside the process chamber and a rotor disposed in the process chamber and connected to the supporting bracket, and a rotor notch corresponding to the notch pair position is provided on the rotor.

[0017] The beneficial effects of the heat treatment device provided in this application include but are not limited to the following:

[0018] The heat treatment device provided in the present application is provided with a supporting ring, a light source generator and a light source receiver. The supporting ring is provided with a limiting portion on the surface for supporting the wafer, and the limiting portion is provided with a pair of notches which are centrally symmetrically distributed about the center of the supporting ring. The notch pair is located on the same straight line as the light source generator and the light source receiver, that is, the light source emitted by the light source generator can pass through the notch pair and be received by the light source receiver; when the wafer position shifts relative to the set area, for example, when part of the wafer is placed on the limiting portion, the light source emitted by the light source generator cannot pass through the notch pair and be received by the light source receiver, then the light source receiver will generate an alarm to remind the operator to re-place the wafer.

[0019] In addition, a slope is provided on one side of the limiting portion toward the center of the supporting ring, and when the wafer placement position deviates from the set area, the wafer can also return to its original position with the help of the slope.

[0020] The heat treatment device provided in the present application can significantly reduce the probability of wafer placement deviation by providing the support ring, the light source generator and the light source receiver, thereby ensuring uniform heating of the wafer during subsequent processing. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The following figures describe in detail the exemplary embodiments disclosed in this application. The same reference numerals represent similar structures in several views of the drawings. Those skilled in the art will understand that these embodiments are non-limiting, exemplary embodiments, and the drawings are only for the purpose of illustration and description, and are not intended to limit the scope of this application. Other embodiments may also accomplish the inventive intent in this application. It should be understood that the drawings are not drawn to scale.

[0022] in:

[0023] Figure 1 This is a schematic diagram of the normal structure of the wafer being placed in the support ring position;

[0024] Figure 2 A schematic diagram of a structure in which a wafer is placed in a deviation position on a support ring;

[0025] Figure 3 is a schematic structural diagram of a heat treatment device according to some embodiments of the present application;

[0026] Figure 4 It is a schematic diagram of the structure of a supporting ring according to some embodiments of the present application;

[0027] Figure 5 for Figure 4 A cross-sectional view of the support ring along the AA direction; and

[0028] Figure 6 for Figure 4 The support ring shown is cut along the BB direction to show a three-dimensional view of the cross section along the AA direction. DETAILED DESCRIPTION

[0029] The following description provides specific application scenarios and requirements of the present application, with the purpose of enabling those skilled in the art to make and use the content in the present application. It will be apparent to those skilled in the art that various local modifications to the disclosed embodiments are apparent, and the general principles defined herein may be applied to other embodiments and applications without departing from the spirit and scope of the present application. Therefore, the present application is not limited to the embodiments shown, but to the widest scope consistent with the claims.

[0030] The present application provides a heat treatment device, comprising: a process chamber; a support ring, arranged in the process chamber, the support ring comprising a ring body, the first surface of the ring body is used to support a wafer, the first surface is provided with a limiting portion, the limiting portion is provided with a pair of notches, and the notches are centrally symmetrically distributed about the center of the ring body; a light source generator and a light source receiver, the light source generator and the light source receiver are arranged inside the process chamber and centrally symmetrically distributed about the center of the ring body; the light source generator is used to emit a light source, and the light source receiver is used to receive the light source and issue an alarm when the light source is not received.

[0031] The heat treatment device provided in the present application is provided with a supporting ring, a light source generator and a light source receiver. The supporting ring is provided with a limiting portion on the surface for supporting the wafer, and the limiting portion is provided with a pair of notches which are centrally symmetrically distributed about the center of the supporting ring. The notch pair is located on the same straight line as the light source generator and the light source receiver, that is, the light source emitted by the light source generator can pass through the notch pair and be received by the light source receiver; when the wafer position shifts relative to the set area, for example, when part of the wafer is placed on the limiting portion, the light source emitted by the light source generator cannot pass through the notch pair and be received by the light source receiver, then the light source receiver will generate an alarm to remind the operator to re-place the wafer.

[0032] In addition, a slope is provided on one side of the limiting portion toward the center of the supporting ring, and when the wafer placement position deviates from the set area, the wafer can also return to its original position with the help of the slope.

[0033] The support ring and heat treatment device provided by the present application will be described in detail below in combination with the embodiments and drawings.

[0034] refer to Figure 3 An embodiment of the present application provides a heat treatment device, including: a process chamber 100 and a supporting ring 200, a light source generator 300 and a light source receiver 400 arranged in the process chamber 100.

[0035] refer to Figures 4 to 6 The supporting ring 200 includes a ring body 201, a first surface of the ring body 201 is used to support the wafer 11, and a limiting portion 202 is provided on the first surface. Figure 6 In order to simplify the illustration, only the support ring 200 is shown. Figure 4 The stereoscopic image is shown with a cross section along the AA direction after cutting along the BB direction.

[0036] When the supporting ring 200 supports the wafer 11, the wafer 11 is placed on the side of the limiting portion 202 close to the center of the ring body 201 and contacts the first surface of the ring body 201. In some embodiments, the distance between the bottom edge of the limiting portion 202 facing the center of the ring body 201 and the inner edge of the ring body 201 is 1 to 2.5 mm, for example, 1 mm, 1.5 mm, 2 mm or 2.5 mm. It should be noted that the inner edge of the ring body 201 refers to the edge of the ring body 201 close to the center of the ring body 201; the outer edge of the ring body 201 refers to the edge of the ring body 201 away from the center of the ring body 201.

[0037] In some embodiments, the stopper 202 is annular and is coaxially arranged with the ring body 201. In some embodiments, the diameter of the circle formed by the bottom edge of the stopper 202 facing the center of the ring body 201 is 300.1-300.6 mm, for example, 300.1 mm, 300.2 mm, 300.3 mm, 300.4 mm or 300.6 mm, so as to adapt to conventional wafers.

[0038] The limiting portion 202 is provided with a slope on one side facing the center of the ring body 201. When the placement position of the wafer 11 deviates from the set area, the wafer 11 can slide along the slope and return to the set area. The set area can be understood as the area surrounded by the bottom edge of the limiting portion 202 on the side facing the center of the ring body 201.

[0039] In some embodiments, the angle α between the slope and the first surface is 50° to 70°, for example, 50°, 55°, 60°, 65° or 70°. By properly setting the angle α between the slope and the first surface, it is helpful to move the wafer 11 along the slope to the set area when the placement position of the wafer 11 is offset relative to the set area, that is, when the wafer 11 partially contacts the inclined surface of the slope.

[0040] In some embodiments, the vertical distance between the top of the slope and the first surface, that is, the height of the slope, is 2-3 mm, such as 2 mm, 2.5 mm or 3 mm.

[0041] The limiting portion 202 provided in the present application is provided with a pair of notches 203 , and the pair of notches 203 are centrally symmetrically distributed about the center of the supporting ring 200 .

[0042] The shape of the notch of the notch pair 203 is not limited, and light, such as infrared light, can be allowed to pass through. In some embodiments, the shape of the notch is square, circular or semicircular. In some embodiments, the shape of the notch is square, and the notch contacts the first surface of the ring body 201, that is, the notch passes through the limiting portion 202. In some embodiments, the width of the notch is 5 to 10 mm, for example, 5 mm, 7 mm, 9 mm or 10 mm.

[0043] In some embodiments, the second surface of the ring body 201 is provided with a clamping portion 204 protruding from the second surface of the ring body 201, which is used to clamp the ring body 201 to a related supporting structure.

[0044] In some embodiments, the ring body 201 , the limiting portion 202 , and the clamping portion 204 are integrally formed.

[0045] In some embodiments, the material of the support ring 200 includes silicon carbide.

[0046] In some embodiments, the clamping portion 204 is annular and is disposed along the outer edge of the ring body 201 .

[0047] The light source generator 300 is used to emit a light source, and the light source receiver 400 is used to receive the light source and issue an alarm when the light source is not received. The light source generator 300 and the light source receiver 400 are centrally symmetrically distributed about the center of the supporting ring 200, and the light source generator 300 and the light source receiver 400 are located on the same straight line as the notch pair 203, that is, the light source emitted by the light source generator 300 can pass through the notch pair 203 and be received by the light source receiver 400.

[0048] In some embodiments, the heat treatment device further includes a controller (not shown in the figure), which is electrically connected to the light source generator 300 and the light source receiver 400 and is used to control the switching of the light source generator 300 and the light source receiver 400.

[0049] When the wafer 11 needs to be placed on the support ring 200, the controller controls the light source generator 300 and the light source receiver 400 to turn on, and the light source generator 300 emits light to the light source receiver 400. If the position of the wafer 11 is within the set area, the light source can be received by the light source receiver 400; if the position of the wafer 11 deviates, for example, the wafer 11 partially overlaps the limit portion 202, so that the light source cannot be received by the light source receiver 400, the light source receiver 400 issues an alarm to remind the operator to re-place the wafer 11. When the light source receiver 400 does not issue an alarm or no longer issues an alarm, that is, after the wafer 11 is placed in the set area, the controller controls the light source generator 300 and the light source receiver 400 to turn off. Then the heat treatment device starts the treatment process for the wafer 11.

[0050] In some embodiments, the light source generator 300 is an infrared generator, and the light source is infrared light.

[0051] In some embodiments, the heat treatment device provided in the present application further includes a supporting bracket 500 , wherein the supporting bracket 500 includes a supporting ring 501 and a plurality of supporting portions 502 connected to the supporting ring 501 .

[0052] In some embodiments, the support ring 501 is clamped with the supporting ring 200. Specifically, the top surface of the support ring 501 contacts the second surface of the ring body 201, and the outer side surface of the support ring 501 contacts the clamping portion 204. The outer side surface of the support ring 501 refers to the side surface of the support ring 501 away from the center of the support ring 501.

[0053] In some embodiments, the material of the support ring 501 includes silicon oxide.

[0054] In some embodiments, the plurality of support portions 502 are evenly distributed along the circumference of the support ring 200. In some embodiments, the number of the support portions 502 is 4 to 8, such as 4, 6 or 8.

[0055] In some embodiments, the support portion 502 includes a card pin 502a and a metal finger 502b. The card pin 502a is fixedly connected to the gold finger, and the card pin 502a and the gold finger together clamp the support ring 501. Specifically, the card pin 502a contacts the outer side surface of the support ring 501, and the top surface of the metal finger 502b contacts the bottom surface of the support ring 501.

[0056] In some embodiments, the heat treatment device further includes a power mechanism 600 , and the power mechanism 600 is connected to the supporting bracket 500 to drive the supporting bracket 500 to rotate.

[0057] In some embodiments, the power mechanism 600 includes a magnetic suspension drive device 601 disposed outside the process chamber 100 and a rotor 602 disposed in the process chamber 100 and connected to the supporting bracket 500 .

[0058] In some embodiments, the rotor 602 is fixedly connected to the metal finger 502b. The rotor 602 is annular, and is kept suspended under the magnetic force of the magnetic suspension drive device 601, and can rotate under the drive of the magnetic suspension drive device 601, and drive the support ring 200 to rotate through the support part 502, thereby rotating the wafer 11 placed on the support ring 200.

[0059] In some embodiments, the rotor 602 is provided with a rotor notch (not shown in the figure) corresponding to the position of the notch pair 203 of the limiting portion 202, and the rotor notch is directly opposite to any one of the notches in the notch pair 203 in the vertical direction.

[0060] The shape of the rotor gap is not limited. In some embodiments, the rotor gap is square, circular or any shape. In some embodiments, the shape of the rotor gap is square, and the size of the rotor gap is 4 x 4 mm.

[0061] In some embodiments, the magnetic suspension drive device 601 is provided with a magnetic induction coil 603 and a reset Hall sensor 604. The magnetic induction coil 603 can generate an induced magnetic field during the rotation of the rotor 602. The reset Hall sensor 604 can receive the induced magnetic field and control the stop driving of the magnetic suspension drive device 601 according to the induced magnetic field.

[0062] Specifically, when the rotation speed of the rotor 602 is lower than the set rotation speed, for example, 10r / min, when the rotor notch of the rotor 602 approaches the magnetic induction coil 603, the induced magnetic field of the magnetic induction coil 603 will change significantly, and the reset Hall sensor 604 will control the magnetic suspension drive device 601 to stop driving after receiving the changed induced magnetic field, so that the rotor 602 stops rotating, so that the rotor 602 stops at the set position after each process is completed, that is, the notch pair 203 of the limit part 202 and the light source generator 300 and the light source receiver 400 are in the same straight line after each process is completed, so as to determine whether there is a deviation in the placement position of the wafer 11 when the next process starts.

[0063] In some embodiments, the heat treatment apparatus further includes a heating source 700 , which is located in the process chamber 100 and is used to heat the first surface of the wafer 11 located in the process chamber 100 .

[0064] In some embodiments, the heating source 700 includes a plurality of light bulbs. In some embodiments, the power of the light bulbs is 400-700W.

[0065] In some embodiments, a transparent partition 800 is provided between the heating source 700 and the supporting ring 200 for separating the process chamber 100 into a heating chamber and a reaction chamber, wherein the heating source 700 is located in the heating chamber and the supporting ring 200 is located in the reaction chamber.

[0066] In some embodiments, the transparent partition 800 is made of quartz.

[0067] In some embodiments, the heat treatment device further includes a reflection plate 900 , which is located on a side of the wafer 11 away from the heating source 700 , and heats the second side of the wafer 11 by reflecting light from the heating source 700 .

[0068] The beneficial effects of the heat treatment device provided in this application include but are not limited to the following:

[0069] The heat treatment device provided in the present application is provided with a supporting ring, a light source generator and a light source receiver. The supporting ring is provided with a limiting portion on the surface for supporting the wafer, and the limiting portion is provided with a pair of notches which are centrally symmetrically distributed about the center of the supporting ring. The notch pair is located on the same straight line as the light source generator and the light source receiver, that is, the light source emitted by the light source generator can pass through the notch pair and be received by the light source receiver; when the wafer position shifts relative to the set area, for example, when part of the wafer is placed on the limiting portion, the light source emitted by the light source generator cannot pass through the notch pair and be received by the light source receiver, then the light source receiver will generate an alarm to remind the operator to re-place the wafer.

[0070] In addition, a slope is provided on one side of the limiting portion toward the center of the supporting ring, and when the wafer placement position deviates from the set area, the wafer can also return to its original position with the help of the slope.

[0071] The heat treatment device provided in the present application can significantly reduce the probability of wafer placement deviation by providing the support ring, the light source generator and the light source receiver, thereby ensuring uniform heating of the wafer during subsequent processing.

[0072] It should be noted that different embodiments may produce different beneficial effects. In different embodiments, the beneficial effects that may be produced may be any one or a combination of the above, or any other beneficial effects that may be obtained.

[0073] The basic concepts have been described above. Obviously, for those skilled in the art, the above detailed disclosure is only for example and does not constitute a limitation of this specification. Although not explicitly stated here, those skilled in the art may make various modifications, improvements and corrections to this application. Such modifications, improvements and corrections are suggested in this specification, so such modifications, improvements and corrections still belong to the spirit and scope of the exemplary embodiments of this application.

[0074] It should be noted that in the description of this application, unless otherwise clearly specified and limited, the terms "install", "connect", "connect", and "fix" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a rotating connection or a sliding connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood in combination with specific circumstances.

[0075] In addition, when terms such as "first", "second", and "third" are used in the specification of this application to describe various features, these terms are only used to distinguish these features and cannot be understood as indicating or implying the relationship between the features, the relative importance, or implicitly indicating the number of features indicated.

[0076] In addition, the present specification describes exemplary embodiments by reference to idealized exemplary cross-sectional views and / or plan views and / or stereograms. Therefore, differences from the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are foreseeable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but should include deviations in shapes caused by, for example, manufacturing. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to illustrate the actual shapes of the regions of the device nor to limit the scope of the exemplary embodiments.

[0077] At the same time, the present application uses specific words to describe the embodiments of this specification. For example, "one embodiment", "an embodiment", and / or "some embodiments" refer to a certain feature, structure or characteristic related to at least one embodiment of the present application. Therefore, it should be emphasized and noted that "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more in different positions in the present application does not necessarily refer to the same embodiment. In addition, some features, structures or characteristics in one or more embodiments of the present application can be appropriately combined.

[0078] Similarly, it should be noted that in order to simplify the description of the disclosure of this application and thus help understand one or more embodiments of the invention, in the above description of the embodiments of this application, multiple features are sometimes combined into one embodiment, figure or description thereof. However, this disclosure method does not mean that the features required by the object of this application are more than the features mentioned in the claims. In fact, the features of the embodiments are less than all the features of the single embodiment disclosed above.

[0079] Finally, it should be understood that the embodiments described in this application are only used to illustrate the principles of the embodiments of the present application. Other variations may also fall within the scope of the present application. Therefore, as an example and not a limitation, the alternative configurations of the embodiments of the present application may be considered to be consistent with the teachings of the present application. Accordingly, the embodiments of the present application are not limited to the embodiments explicitly introduced and described in the present application.

Claims

1. A heat treatment device, characterized in that: include: Process chamber; A supporting ring is arranged in the process chamber, the supporting ring comprises a ring body, a first surface of the ring body is used to support the wafer, a limiting portion is arranged on the first surface, the limiting portion is provided with a pair of notches, and the pair of notches are centrally symmetrically distributed about the center of the ring body; A light source generator and a light source receiver, wherein the light source generator and the light source receiver are arranged inside the process chamber and are centrally symmetrically distributed about the center of the ring body; the light source generator is used to emit a light source, and the light source receiver is used to receive the light source and issue an alarm when the light source is not received.

2. The heat treatment device according to claim 1, characterized in that The supporting ring further comprises a limiting portion, and a slope is arranged on one side of the limiting portion facing the center of the ring body.

3. The heat treatment device according to claim 2, characterized in that: The distance between the bottom edge of the limiting portion facing the center of the ring body and the inner edge of the ring body is 1 to 2.5 mm.

4. The heat treatment device according to claim 2, characterized in that: The included angle between the slope and the first surface is 50° to 70°.

5. The heat treatment device according to claim 2, characterized in that: The limiting portion is annular and is coaxially arranged with the ring body.

6. The heat treatment device according to claim 1, characterized in that: Also includes: A controller is electrically connected to the light source generator and the light source receiver, and is used to control the switching of the light source generator and the light source receiver.

7. The heat treatment device according to claim 1, characterized in that: Also included is a heating source, located in the process chamber, for heating the first side of the wafer located in the process chamber.

8. The heat treatment device according to claim 7, characterized in that: It also includes a reflection plate, which is located on a side of the wafer away from the heating source and is used to heat the second side of the wafer.

9. The heat treatment device according to claim 1, characterized in that: It also includes a supporting bracket and a power mechanism, wherein the supporting bracket is used to support the supporting ring, and the power mechanism is connected to the supporting bracket to drive the supporting bracket to rotate.

10. The heat treatment device according to claim 9, characterized in that: The power mechanism comprises a magnetic suspension drive device arranged outside the process chamber and a rotor arranged in the process chamber and connected to the supporting bracket, and a rotor notch corresponding to the position of the notch pair is arranged on the rotor.

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