Electrostatic chuck and semiconductor processing device

Abstract

The utility model discloses an electrostatic chuck and a semiconductor processing device. The electrostatic chuck specifically comprises a substrate, a heater and a ceramic layer, wherein the heater and the ceramic layer are sequentially arranged on the top surface of the substrate. And the bonding layers are respectively arranged on the top surface and the bottom surface of the heater and are used for bonding the heater between the substrate and the ceramic layer. The heater comprises a first metal plate and a first heating area which are arranged in a stacked mode. The first heating area comprises a first insulation bonding layer, a first resistance heating layer, a second insulation bonding layer, a first circuit switching layer and a third insulation bonding layer which are arranged in a stacked mode. And the first resistance heating layer comprises a power supply loop which is converged and led out from the first circuit switching layer. And the plurality of heating elements are arranged in an array and are connected with the power supply loop. A plurality of rectifiers, each of which is connected in series with a corresponding heating element; the plurality of rectifiers form a one-way conduction layer and are located below the third insulation bonding layer. The service life of the rectifier can be prolonged; the complexity of the preparation process is reduced, and the processing time is shortened.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor processing equipment, and particularly relates to an electrostatic chuck and a semiconductor processing device. Background Art

[0002] In a semiconductor processing chamber for performing etching, chemical vapor deposition (CVD), sputtering, ion implantation, ashing, etc., an electrostatic chuck is used as a method for adsorbing and holding a processing object such as a semiconductor wafer or a glass substrate.

[0003] With the continuous development of integrated circuit technology, higher requirements are put forward for semiconductor manufacturing equipment. For example, when processing a substrate using a plasma etching device, in order to make the substrate reach a desired temperature in the process flow, the electrostatic chuck further includes a heater for controlling the temperature of the substrate.

[0004] However, for existing heaters, such as the electrical components of a matrix heater, their preparation process is sintered in ceramics. This preparation process has high requirements, a complex structure, great sintering difficulty, a long processing time, and the resistance control accuracy of the matrix heater is not high, reducing the yield of the substrate and having a high preparation cost. Summary of the Utility Model

[0005] The purpose of the utility model is to provide an electrostatic chuck and a semiconductor processing device, so as to reduce the preparation difficulty of the electrostatic chuck, shorten its production and preparation cycle, and reduce the preparation cost.

[0006] In order to solve the above problems, the utility model is implemented by adopting the following technical solutions:

[0007] An electrostatic chuck includes: a base, a heater and a ceramic layer sequentially arranged on the top surface of the base. At least two adhesive layers are respectively arranged on the top surface and the bottom surface of the heater to bond the heater between the base and the ceramic layer; the heater includes: a first metal plate and a first heating zone sequentially stacked from top to bottom; the first heating zone includes: a first insulating adhesive layer, a first resistive heating layer and a third insulating adhesive layer sequentially stacked from top to bottom. The first resistive heating layer includes a plurality of heating elements arranged in an array and a power supply circuit, and the heating elements are connected to the power supply circuit to generate heat according to the current provided by the power supply circuit;

[0008] And a plurality of rectifiers, each rectifier is connected in series with a corresponding heating element to ensure the current direction flowing through each heating element; the plurality of rectifiers form a unidirectional conduction layer, and the unidirectional conduction layer is located below the third insulating adhesive layer.

[0009] Optionally, a plurality of grooves are provided on the top surface of the substrate, and the grooves are used to accommodate the rectifiers at corresponding positions.

[0010] Optionally, a plurality of grooves are provided in the adhesive layer on the bottom surface of the heater, and the grooves are used to accommodate the corresponding rectifiers.

[0011] Optionally, the first heating zone further includes a second insulating adhesive layer and a first circuit transfer layer located between the first resistive heating layer and the third insulating adhesive layer, and the power supply circuit includes a ground bus and a power supply bus; the first end of each heating element is connected to the corresponding power supply bus in series after being connected in series with a rectifier, and the second end is connected to the ground bus.

[0012] Optionally, the power supply bus is arranged on the same layer as the first resistive heating layer; the ground bus converges and leads out in the first circuit transfer layer.

[0013] Optionally, the first heating zone further includes: a second circuit transfer layer and a fourth insulating adhesive layer stacked in sequence from top to bottom; the second circuit transfer layer is located below the third insulating adhesive layer; the power supply bus converges and leads out in the second circuit transfer layer; the ground bus converges and leads out in the first circuit transfer layer.

[0014] Optionally, the heater further includes: a second heating zone, which is arranged below the first heating zone; the density of the heating elements in the first heating zone is greater than the density of the heating elements in the second heating zone.

[0015] Optionally, the heater further includes a second metal plate, which is arranged below the first heating zone.

[0016] Optionally, a plurality of grooves are provided on the top surface of the second metal plate, and the grooves are used to accommodate the corresponding rectifiers.

[0017] Optionally, the materials of the first metal plate and the second metal plate are aluminum, stainless steel or copper respectively.

[0018] Optionally, the material of the adhesive layer is polyimide or silica gel.

[0019] Optionally, the thickness of the heater is 0.5 - 3 mm.

[0020] Optionally, the side wall of the heater is sealed with an adhesive material.

[0021] Optionally, the heating element is a thin film resistance wire.

[0022] Optionally, the rectifier is a diode.

[0023] On the other hand, the present utility model also provides a semiconductor processing apparatus, comprising: a reaction chamber, and an electrostatic chuck as described above located within the reaction chamber; the electrostatic chuck is used for performing multi-zone temperature regulation on a substrate carried by the ceramic layer.

[0024] The present utility model has at least one of the following technical effects:

[0025] The heater of the electrostatic chuck provided by the present utility model bonds the heater between the substrate and the ceramic layer through an adhesive layer. It can be seen therefrom that the heater of the present utility model is prepared by an adhesive bonding method, and has the advantages of low preparation process requirements, simple structure, short processing time, and reduced preparation cost.

[0026] By separately forming a unidirectional conduction layer for multiple rectifiers in the present utility model without arranging them together with the first resistive heating layer, on the one hand, it can be relatively far away from the first resistive heating layer to improve its service life; on the other hand, it is located below the first resistive heating layer, which is convenient for processing, further reducing the complexity of the preparation process, shortening the processing time, and reducing the preparation cost.

[0027] The rectifier provided by the present utility model can make the current in the power supply circuit conduct unidirectionally and reduce the crosstalk between each heating element.

[0028] In addition, the present utility model specifically provides a groove on the top surface of the substrate, or within the adhesive layer on the bottom surface of the heater, or on the top surface of the second metal plate, and the groove is used to accommodate the rectifier at the corresponding position. It can be seen therefrom that the setting of the groove can provide a accommodation space for the rectifier without increasing the overall thickness of the heater.

[0029] The setting of the circuit transfer layer of the present utility model can lead out the entire power supply circuit as a whole, facilitating the arrangement of heating elements, and further reducing the complexity of the preparation process. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 is a schematic diagram of the overall structure of an electrostatic chuck provided by an embodiment of the present utility model;

[0031] Figure 2 is a schematic diagram of the structure of a heater provided by the first embodiment of the present utility model;

[0032] Figure 3 is a schematic diagram of the structure in which multiple heating elements are arranged in a row-column matrix provided by an embodiment of the present utility model;

[0033] Figure 4 is a schematic diagram of the structure of a heater provided by the second embodiment of the present utility model;

[0034] Figure 5 Schematic structural diagram of a heater provided in the third embodiment of the present utility model;

[0035] Figure 6 Schematic structural diagram of a heater provided in the fourth embodiment of the present utility model;

[0036] Figure 7 Schematic structural diagram of a groove provided in an embodiment of the present utility model;

[0037] Figure 8 Schematic structural diagram of a semiconductor processing device provided in an embodiment of the present utility model. Detailed implementation manners

[0038] The following further elaborates on an electrostatic chuck and a semiconductor processing device proposed by the present utility model in conjunction with the accompanying drawings and detailed implementation manners. According to the following description, the advantages and features of the present utility model will be clearer. It should be noted that the accompanying drawings are in a very simplified form and all use non-precise scales, only for conveniently and clearly assisting in explaining the purpose of the implementation manners of the present utility model. In order to make the purpose, features, and advantages of the present utility model more obvious and understandable, please refer to the accompanying drawings. It should be known that the structures, scales, sizes, etc. shown in the drawings of this specification are only used to cooperate with the content disclosed in the specification for those familiar with this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the present utility model. Therefore, they do not have practical technical significance. Any modification of the structure, change in the proportional relationship, or adjustment of the size, without affecting the effects that the present utility model can produce and the purposes that can be achieved, should still fall within the scope covered by the technical content disclosed by the present utility model.

[0039] As described in the background art, there are electrostatic chucks with built-in heaters. For example, matrix heaters, whose manufacturing process is sintered in ceramics. This manufacturing process has high requirements, a complex structure, and a long processing time.

[0040] In order to improve the temperature uniformity within the substrate surface, the heater is divided into different heating zones, and the temperature of different heating zones is controlled separately. With the continuous improvement of process requirements, the number of heating zones has been increasing, from several to dozens, or even more, which further increases the manufacturing process difficulty of the heater. Based on this, the present utility model provides an electrostatic chuck with a thin-film heater. The thin-film heater realizes the connection of each layer of heating zones through a lamination design of multiple layers of heating zones and the use of an adhesive layer, which can not only simplify the manufacturing process difficulty of the heater but also flexibly design the heating zones, thereby improving the temperature uniformity within the substrate surface.

[0041] As Figure 1As shown in the figure, this embodiment provides an electrostatic chuck, including: a substrate 100, a heater 200 and a ceramic layer 400 sequentially disposed on the top surface of the substrate 100. At least two adhesive layers (such as Figure 1 the first adhesive layer 301 and the second adhesive layer 302 shown in

[0042] are respectively disposed on the top surface and the bottom surface of the heater 200 to bond the heater 200 between the substrate 100 and the ceramic layer 400. The ceramic layer 400 is used to adsorb a substrate. The heater 200 is used to heat the substrate through the ceramic layer 400 to provide the required process temperature for it. Figure 2 As shown in the figure, the heater 200 provided in this embodiment includes: a first metal plate 201 and a first heating zone 240 sequentially stacked from top to bottom. The first heating zone 240 includes: a first insulating adhesive layer 210, a first resistive heating layer 231, a second insulating adhesive layer 211, a first circuit transfer layer 220, and a third insulating adhesive layer 212 sequentially stacked from top to bottom. The first insulating adhesive layer 210 is used to bond the first resistive heating layer 231 to the first metal plate 201 and insulate the two. The first metal plate 201 is used to provide uniform conductive heat for the ceramic layer 400.

[0043] The first resistive heating layer 231 includes: a power supply circuit ( Figure 2 not shown in the figure) and a plurality of heating elements arranged in an array ( Figure 2 not shown in the figure), and the power supply circuit converges and leads out in the first circuit transfer layer 220. The plurality of heating elements arranged in an array are connected to the power supply circuit and used to generate heat according to the current provided by the power supply circuit. A plurality of rectifiers ( Figure 2 not shown in the figure), each rectifier is connected in series with a corresponding heating element to ensure the current direction flowing through each heating element. The plurality of rectifiers form a unidirectional conduction layer D1, and the unidirectional conduction layer D1 is located below the third insulating adhesive layer 212. The heating elements and the rectifiers can be connected by wires penetrating multiple layers. The understanding of "below" here can be that the unidirectional conduction layer D1 is in contact with the third insulating adhesive layer 212, or the two are not in contact, but only located at a position below the third insulating adhesive layer 212.

[0044] The heater of this embodiment is prepared by an adhesive method, which can reduce the difficulty of the preparation process, and the structure of the heater is simple, shortening the processing time and reducing the preparation cost.

[0045] In this embodiment, by forming a plurality of rectifiers into a unidirectional conduction layer separately without being disposed together with the first resistive heating layer, on the one hand, it can be relatively far away from the first resistive heating layer, improving its service life; on the other hand, it is located below the first resistive heating layer, facilitating processing, further reducing the complexity of the manufacturing process, shortening the processing time and reducing the manufacturing cost.

[0046] In this embodiment, preferably, the material of the adhesive layer is polyimide or silica gel. Thus, the bonding of the heater 200 is realized, reducing the complexity of the manufacturing process.

[0047] The first resistive heating layer 231 can be arranged in zones. For example, it can be divided into four temperature control zones, and a plurality of heating elements in each temperature control zone are arranged in an array. The array arrangement mode of the heating elements in each temperature control zone can be a row-column matrix, or a concentric ring matrix. For the concentric ring matrix, it can be any one of a concentric rectangle, a concentric hexagon, and a concentric ring. The number, shape, and heating power of the heating elements in different temperature control zones can be the same or different.

[0048] For example, as Figure 3 shown, a plurality of heating elements included in the first resistive heating layer 231 are distributed in a row-column matrix of m rows and n columns. The power supply circuit in the first resistive heating layer 231 includes: a ground bus (n ground buses, as shown by reference numerals B1 to Bn in Figure 3 ) and a power supply bus (m power supply buses, as shown by reference numerals A1 to Am in Figure 3 ); the first end of each heating element (11 to mn) is connected to the corresponding power supply bus in series after being connected in series with a rectifier D, and the second end is connected to the ground bus.

[0049] A plurality of heating elements are arranged in a matrix. Like in a rectangular coordinate system, each heating element has only one definite one-to-one corresponding coordinate position. The on / off of a certain heating element can be accurately controlled by switching the power supply bus and the ground bus of a certain row + a certain column. The position where the power supply bus and the ground bus cross is the position where the switch of the target heating element is located.

[0050] Control of a single heating element: For example, to control a single heating element 21, only need to turn on the power supply bus A2 and at the same time turn on the ground bus B1, so that a current is passed through the heating element 21 to generate heat. Although the power supply buses of all the heating elements (21 to 2n) in this row of the power supply bus A2 are connected, since the ground buses of the heating elements (22 to 2n) are not connected, other heating elements (22 to 2n) in this row that do not need to be controlled will not be triggered.

[0051] When all the heating elements (11 to mn) in the first resistive heating layer 231 are controlled, all the power supply buses (A1 to Am) are turned on, and all the ground buses (B1 to Bm) are simultaneously turned on. Thus, all the heating elements (11 to mn) can be controlled and used for heating.

[0052] In addition, a rectifier D is provided between the power supply bus and each of the heating elements to prevent current crosstalk between the heating elements. Please continue to refer to Figure 3 As shown, when only a single heating element 21 is controlled, current flows from the power supply bus A2 through the rectifier D into the heating element 21, and flows out of the heating element 21 into the ground bus B1 to form a current loop. However, this current will not flow back into the heating element 11 through the ground bus B1 because the rectifier between the heating element 11 and its power supply bus A1 is reverse non-conductive. It can be seen that in this embodiment, the rectifier provided enables unidirectional conduction of the current in the power supply loop, reducing current crosstalk between the heating elements.

[0053] In addition, in this embodiment, the temperature of the heating element and the position of the heating element through which current has been passed can be calculated by measuring the current reading of the reverse saturation current of the rectifier connected in series to the heating element, realizing temperature feedback.

[0054] In this embodiment, the rectifier D is a diode, thus further reducing the equipment cost. In other embodiments, other electronic devices can also be used for the rectifier.

[0055] In this embodiment, please continue to refer to Figure 2 As shown, if the first heating zone 240 is for large-area heating, since the number density of the heating elements in the first resistive heating layer 231 is small, that is, the number of heating elements per unit area is small, and the lead distributions of the power supply buses and the ground buses are not many, the power supply bus can be arranged on the same layer as the first resistive heating layer, that is, the power supply bus connects the heating elements on the same layer, and only the total input end penetrates to other layers to connect to the external power supply; the ground bus converges and leads out in the first circuit transfer layer, that is, the grounding ends of the ground wires of each heating element pass through other layers and converge in the first circuit transfer layer and then are grounded. This can not only reduce the structural complexity of the heater but also reasonably arrange the power supply loop, further reducing the equipment cost.

[0056] In this embodiment or some other embodiments, such as Figure 4As shown, the first heating zone 240 further includes: a second circuit transfer layer 221 and a fourth insulating adhesive layer 213 stacked in sequence from top to bottom; the second circuit transfer layer 221 is located below the third insulating adhesive layer 212; the power supply bus converges and leads out in the second circuit transfer layer 221; the ground bus converges and leads out in the first circuit transfer layer. Thus, in order to arrange the power supply circuit more reasonably, the power supply bus can converge and lead out in the second circuit transfer layer 221. It can be understood that due to the arrangement of the second circuit transfer layer 221 and the fourth insulating adhesive layer 213, multiple rectifiers form a one-way conduction layer D1, and the one-way conduction layer D1 is located below the fourth insulating adhesive layer 213. The understanding of "below" here can be that the one-way conduction layer D1 is in contact with the fourth insulating adhesive layer 213, or the two are not in contact, but only located below the fourth insulating adhesive layer 213.

[0057] In this embodiment or some other embodiments, as Figure 5 shown, the heater 200 further includes: a second heating zone 241, and the second heating zone 241 is arranged below the first heating zone 240; the density of the heating elements in the first heating zone 241 is greater than the density of the heating elements in the second heating zone 241. Thus, the arrangement of the second heating zone 241 can make the heating effect of the heater 200 more uniform, that is, make the in-plane temperature distribution of the substrate more uniform.

[0058] Please continue to refer to Figure 5 shown, the overall layer structure of the second heating zone 241 is the same as that of the first heating zone 240, including: a second resistive heating layer 232, a fifth insulating adhesive layer 214, a third circuit transfer layer 222, a sixth insulating adhesive layer 215, a fourth circuit transfer layer 223, and a seventh insulating adhesive layer 216 stacked in sequence from top to bottom.

[0059] The second resistive heating layer 232 also includes a plurality of heating elements arranged in an array, and the arrangement method may be the same as or different from that of the first resistive heating layer 231. The density of the heating elements in the second resistive heating layer 232 is less than the density of the heating elements in the first resistive heating layer 231. The second resistive heating layer 232 also includes: a power supply circuit ( Figure 5 not shown in the figure). The power supply bus of the power supply circuit converges and leads out in the third circuit transfer layer 222. Its ground bus converges and leads out in the fourth circuit transfer layer 223. There are also a plurality of rectifiers in the second heating zone 241 ( Figure 5(not shown in the figure), each of the rectifiers is connected in series with the corresponding heating element to ensure the direction of the current flowing through each heating element. A plurality of the rectifiers in the first heating zone 240 and the second heating zone 241 may form a unidirectional conduction layer( Figure 5 (indicated by reference numeral D2 in the figure), and the unidirectional conduction layer is located below the seventh insulating adhesive layer 216. The understanding of "below" here can be that the unidirectional conduction layer is in contact with the seventh insulating adhesive layer 216, or the two are not in contact, and it is only located at a position below the seventh insulating adhesive layer 216.

[0060] In this embodiment, the heating element is a thin film resistance wire.

[0061] In this embodiment or some other embodiments, as Figure 6 (shown in the figure), the heater 200 further includes a second metal plate 202, and the second metal plate 202 is disposed below the first heating zone 240. That is, the second metal plate 202 may be disposed below the first heating zone 240, or may be disposed below the second heating zone 241. When it is disposed below the first heating zone 240, it may be located below the third insulating adhesive layer 212 of the first heating zone 240 and be in contact connection with it; or it may be located below the fourth insulating adhesive layer 213 of the first heating zone 240 and be in contact connection with it.

[0062] Among them, when it is located below the second heating zone 241, it may be located below the seventh insulating adhesive layer 216 and be in contact connection with it.

[0063] In this embodiment, the materials of the first metal plate 201 and the second metal plate 202 are aluminum, stainless steel or copper respectively, which can have good heat conduction and heat diffusion effects, and improve the in-plane temperature uniformity of the substrate.

[0064] In this embodiment or some other embodiments, as Figure 7 (shown in the figure), a plurality of grooves G are provided on the top surface of the substrate 100, and the grooves G are used to accommodate the rectifiers at corresponding positions. That is, the unidirectional conduction layer (D1 or D2) is provided on the same layer as the top surface of the substrate 400. Since a cooling channel is provided in the substrate 100, and since the rectifier is disposed close to the cooling channel, the rectifier can be cooled, further extending the service life of the rectifier and reducing the equipment cost.

[0065] Alternatively, the groove G is located in the second adhesive layer 302 on the bottom surface of the heater 200, and the groove G is used to accommodate the corresponding rectifier. That is, the unidirectional conduction layer (D1 or D2) is provided on the same layer as the second adhesive layer 302.

[0066] Alternatively, the groove G is located on the top surface of the second metal plate 202, and the groove G is used to accommodate the corresponding rectifier. That is, the unidirectional conduction layer (D1 or D2) is arranged on the same layer as the second metal plate 202.

[0067] It can be seen from this that in this embodiment, by separately forming a plurality of rectifiers into a unidirectional conduction layer without arranging them together with the resistance heating layer (the first resistance heating layer or the second resistance heating layer), on the one hand, it can be relatively far away from the resistance heating layer, improving its service life; on the other hand, it is located below the resistance heating layer, facilitating processing, further reducing the complexity of the preparation process, shortening the processing time and reducing the preparation cost.

[0068] In addition, in this embodiment, a groove is specifically provided, and the groove is used to accommodate the rectifier at the corresponding position. It can be seen from this that the setting of the groove can provide a accommodating space for the rectifier without increasing the overall thickness of the heater.

[0069] In this embodiment, the thickness of the heater is 0.5 - 3 mm. The occupied space of the heater is reduced, and the side wall of the heater is sealed with an adhesive material, so that under process conditions, gas ions will not enter the interior of the heater and damage the heater.

[0070] On the other hand, as Figure 8 shown, the present invention also provides a semiconductor processing apparatus, including: a reaction chamber 10, and an electrostatic chuck 11 as described above located in the reaction chamber 10; the electrostatic chuck 11 is used for multi-zone temperature regulation of the substrate carried by the ceramic layer.

[0071] It should be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not expressly listed, or also includes elements inherent to such process, method, article or device. Without further limitation, an element defined by the statement "including a..." does not exclude the existence of additional identical elements in the process, method, article or device including the element.

[0072] In the description of the present utility model, it should be understood that the orientation or positional relationship indicated by terms such as "center", "height", "thickness", "upper", "lower", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation to the present utility model. In the description of the present utility model, unless otherwise specified, the meaning of "a plurality of" is two or more.

[0073] In the description of the present utility model, unless otherwise clearly defined and limited, the terms "mounted", "connected", "connected to", "fixed" shall be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or integrated; it can be a mechanical connection or an electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the communication inside two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present utility model can be understood according to specific situations.

[0074] In the present utility model, unless otherwise clearly defined and limited, the first feature being "above" or "below" the second feature may include the direct contact between the first and second features, or may include the situation where the first and second features are not in direct contact but in contact through additional features therebetween. Moreover, the first feature being "above", "over" and "on" the second feature includes that the first feature is directly above and obliquely above the second feature, or merely means that the horizontal height of the first feature is higher than that of the second feature. The first feature being "under", "beneath" and "underneath" the second feature includes that the first feature is directly below and obliquely below the second feature, or merely means that the horizontal height of the first feature is lower than that of the second feature.

[0075] Although the content of the present utility model has been introduced in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as a limitation to the present utility model. After those skilled in the art have read the above content, various modifications and substitutions to the present utility model will be obvious. Therefore, the protection scope of the present utility model should be defined by the appended claims.

Claims

1. An electrostatic chuck, characterized in that: include: Base, a heater and a ceramic layer sequentially disposed on the top surface of the substrate; at least two adhesive layers, respectively disposed on the top and bottom surfaces of the heater, to bond the heater between the substrate and the ceramic layer; The heater comprises: a first metal plate and a first heating zone which are sequentially stacked from top to bottom; the first heating zone comprises: a first insulating adhesive layer, a first resistance heating layer and a third insulating adhesive layer which are sequentially stacked from top to bottom; The first resistance heating layer includes a plurality of heating elements and a power supply circuit arranged in an array, wherein the heating elements are connected to the power supply circuit and are used to generate heat according to the current provided by the power supply circuit; And, a plurality of rectifiers, each of which is connected in series with the corresponding heating element to ensure the direction of the current flowing through each heating element; the plurality of rectifiers form a unidirectional conductive layer, and the unidirectional conductive layer is located below the third insulating adhesive layer.

2. The electrostatic chuck according to claim 1, wherein: A plurality of grooves are arranged on the top surface of the substrate, and the grooves are used to accommodate the rectifiers at corresponding positions.

3. The electrostatic chuck according to claim 1, wherein: A plurality of grooves are provided in the adhesive layer on the bottom surface of the heater, and the grooves are used to accommodate the corresponding rectifiers.

4. The electrostatic chuck according to claim 1, wherein: The first heating zone further comprises a second insulating adhesive layer and a first circuit switching layer located between the first resistance heating layer and the third insulating adhesive layer, and the power supply circuit comprises a ground bus and a power supply bus; A first end of each heating element is connected in series with a rectifier and then connected to the corresponding power supply bus, and a second end of each heating element is connected to the ground bus.

5. The electrostatic chuck according to claim 4, characterized in that The power supply bus is arranged in the same layer as the first resistance heating layer; the ground bus is joined and led out in the first circuit switching layer.

6. The electrostatic chuck according to claim 4, wherein: The first heating zone further includes: a second circuit transfer layer and a fourth insulating adhesive layer stacked sequentially from top to bottom; The second circuit transfer layer is located below the third insulating adhesive layer; The power supply bus is converged and led out in the second circuit switching layer; The ground bus is merged and led out in the first circuit transfer layer.

7. The electrostatic chuck according to claim 1, wherein: The heater further includes: a second heating zone, the second heating zone being disposed below the first heating zone; The number density of heating elements in the first heating zone is greater than the number density of heating elements in the second heating zone.

8. The electrostatic chuck according to claim 1, wherein: The heater also includes a second metal plate disposed below the first heating zone.

9. The electrostatic chuck according to claim 8, wherein: The top surface of the second metal plate is provided with a plurality of grooves, and the grooves are used to accommodate the corresponding rectifiers.

10. The electrostatic chuck according to claim 9, wherein: The first metal plate and the second metal plate are made of aluminum, stainless steel or copper respectively.

11. The electrostatic chuck according to claim 1, wherein: The material of the adhesive layer is polyimide or silica gel.

12. The electrostatic chuck according to claim 1, wherein: The thickness of the heater is 0.5-3 mm.

13. The electrostatic chuck according to claim 1, wherein: The side walls of the heater are sealed with an adhesive material.

14. The electrostatic chuck according to claim 1, wherein: The heating element is a thin film resistance wire.

15. The electrostatic chuck according to claim 1, wherein: The rectifier is a diode.

16. A semiconductor processing device, characterized in that: include: A reaction chamber, an electrostatic chuck according to any one of claims 1 to 15 located in the reaction chamber; The electrostatic chuck is used to perform multi-zone temperature regulation on the substrate carried by the ceramic layer.

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