Ultrahigh-temperature DBD type wide plasma treatment device under normal pressure

Abstract

The utility model provides a normal-pressure ultrahigh-temperature DBD type wide plasma processing device which comprises a shell with a hollow inner cavity, a plurality of gas inlet pipes are arranged at the top of the shell, one end of each gas inlet pipe is communicated with a high-temperature gas input pipeline, and the other end of each gas inlet pipe extends to the inner cavity of the shell and is communicated with the inner cavity of the shell. The ultrahigh-temperature DBD type wide plasma treatment device under the normal pressure is characterized in that a high-energy feed inlet is formed in the inner cavity of the shell, an electrode assembly matched with the high-energy feed inlet is arranged in the inner cavity of the shell, a plurality of gas distribution holes used for discharging plasma for cleaning penetrate through the bottom of the shell, and a ceramic electric heating pipe for achieving ultrahigh-temperature plasma treatment is further arranged in the inner cavity of the shell. And the plasma is discharged through the air distribution holes, so that the non-hydrophilic characteristic of the surface of the special high polymer material is changed.

Description

Technical Field

[0001] The utility model relates to the technical field of plasma processing devices, and particularly relates to an atmospheric-pressure ultra-high-temperature DBD wide-width plasma processing device. Background Art

[0002] A plasma cleaner, also known as a plasma cleaning machine or a plasma surface treatment instrument, is a brand-new high-tech technology that uses plasma to achieve effects that cannot be achieved by conventional cleaning methods.

[0003] Plasma is a neutral, high-energy, ionized gas. It includes neutral atoms or molecules, electrons, active groups, excited nuclides, photons, etc. Plasma is the fourth state of matter different from solids, liquids, and gases. Matter is composed of molecules, molecules are composed of atoms, and atoms are composed of a positively charged atomic nucleus and electrons with negative charges orbiting around it. When heated to a high enough temperature or due to other reasons, the outer electrons break free from the bondage of the atomic nucleus and become free electrons. The electrons leave the atomic nucleus, and this process is called "ionization". At this time, the matter becomes a uniform "paste" composed of positively charged atomic nuclei and negatively charged electrons. Therefore, people jokingly call it ion plasma. The total amount of positive and negative charges in these ion plasmas is equal, so it is approximately electrically neutral, so it is called plasma.

[0004] The plasma cleaner processes the surface of the sample by utilizing the properties of these active components, thereby achieving purposes such as cleaning and coating.

[0005] Referring to a wide-width plasma cleaner disclosed in a Chinese patent with the reference application number CN202410707785.X, through the mutual cooperation of a fitting clip, a middle clip, a first diversion groove, and a second diversion groove, gas enters from the air inlet and is diverted into the quartz tube placement through groove through the alternating and connected first diversion groove and second diversion groove. Through the diversion of the above gas flow channels, the gas entering the middle clip is dispersed and can flow evenly into the quartz tube placement through groove. The wiring assembly energizes the electrodes placed in the quartz tube placement through groove, so that the gas in the quartz tube placement through groove forms plasma gas, and the evenly distributed plasma gas can be evenly ejected from the air outlet, ensuring the cleaning efficiency of the product to be cleaned.

[0006] An atmospheric-pressure plasma device for achieving wide-width glow discharge disclosed in a Chinese patent with the reference publication number CN219834444U realizes wide-width processing, and the single processing width can reach more than 500 mm. Due to the glow discharge characteristics, the processing uniformity is ensured.

[0007] For some special high-temperature resistant polymer materials, to change their hydrophobic surface characteristics, it is necessary to introduce a plasma treatment device to make their surfaces hydrophilic. However, when the plasma gas in the above device reaches the product, the temperature of the plasma gas is lower than 500 °C, the plasma activity is insufficient, and it cannot meet the functional requirements, and it cannot change the hydrophobic characteristics of the surface of the special polymer material. Summary of the Invention

[0008] To overcome the deficiencies of the prior art, the present utility model proposes an ultra-high temperature DBD wide-width plasma treatment device under normal pressure, including a housing with a hollow inner cavity. A plurality of intake pipes are provided at the top of the housing. One end of the intake pipe is communicated with a high-temperature gas input pipeline, and the other end extends into the inner cavity of the housing and is communicated with the inner cavity of the housing. The housing is also provided with a high-energy feeding port. An electrode assembly matched with the high-energy feeding port is arranged in the inner cavity of the housing. A plurality of air distribution holes for discharging plasma for cleaning penetrate through the bottom of the housing. A ceramic electric heating tube for realizing ultra-high temperature plasma treatment is also arranged in the inner cavity of the housing.

[0009] To achieve the above purpose, the heated process gas enters the inner cavity of the housing through the intake pipe, provides the energy required for plasma with high stability through the high-energy feeding port, ionizes gas molecules into plasma through the electrode assembly, realizes ultra-high temperature plasma treatment through the ceramic electric heating tube, increases the ion activity to meet the functional requirements, and the plasma is discharged through the air distribution holes to change the hydrophobic characteristics of the surface of the special polymer material.

[0010] Further, the electrode assembly includes high-temperature resistant ceramic columns arranged circumferentially around the air distribution holes. The inner cavities of the high-temperature resistant ceramic columns are hollow and communicate with the air distribution holes and the inner cavity of the housing. Electrodes are arranged in each of the high-temperature resistant ceramic columns. Springs are fixed on the electrodes. One end of the spring extends out of the high-temperature resistant ceramic column, and a copper column is fixed at the end of the spring extending out of the high-temperature resistant ceramic column. The copper column and the high-energy feeding port are connected through a connecting component.

[0011] Through the above technical solution, the high-temperature resistant ceramic columns are fixed to the housing, and the plasma gas in the inner cavity of the housing can only pass through the high-temperature resistant ceramic columns to penetrate the housing. The high-temperature resistant ceramic columns are used as non-metallic insulating media to ensure the long-term stability of the device.

[0012] Further, the connecting component includes a power board fixed in the inner cavity of the housing. The end of the copper column away from the spring is electrically connected to the power board, and the power board is electrically connected to the high-energy feeding port through a high-voltage cable.

[0013] Through the above technical solution, the power board and the high-energy feeding port cooperate to provide the energy required for plasma with high stability.

[0014] Furthermore, a heat insulation component for protecting the power board is provided in the inner cavity of the outer shell.

[0015] Through the above technical solution, by providing a heat insulation component to protect the power board, the damage to the power board caused by high temperature is reduced, and the service life of the power board is improved.

[0016] Furthermore, the heat insulation component includes a temperature-resistant heat insulation board fixed in the inner cavity of the outer shell from top to bottom and a quartz insulation board for isolating heat radiation, and the power board is located between the temperature-resistant heat insulation board and the quartz insulation board.

[0017] Through the above technical solution, by providing a temperature-resistant heat insulation board and a quartz insulation board to protect the power board, the possibility of the power board being damaged by high temperature is reduced.

[0018] Furthermore, a number of through holes are penetrated through the temperature-resistant heat insulation board, the power board and the quartz insulation board.

[0019] Through the above technical solution, gas sequentially penetrates through the temperature-resistant heat insulation board, the power board and the quartz insulation board through the through holes, realizing uniform gas distribution.

[0020] Furthermore, a cyclone gas distribution nozzle is fixed at one end of the air inlet pipe entering the inner cavity of the outer shell.

[0021] Through the above technical solution, a large air amplification ratio is achieved.

[0022] In summary, the ultra-high temperature DBD type wide-width plasma processing device under normal pressure has the following beneficial effects:

[0023] For the ultra-high temperature DBD type wide-width plasma processing device under normal pressure, the heated process gas enters the inner cavity of the outer shell through the air inlet pipe, the high-energy feed port provides the energy required for plasma with high stability, the gas molecules are ionized to form plasma through the electrode assembly, the ultra-high temperature plasma processing is realized through the ceramic electric heating tube, the ion activity is increased to meet the functional requirements, and the plasma is discharged through the air distribution holes, changing the non-hydrophilic property of the surface of the special polymer material.

[0024] For the ultra-high temperature DBD type wide-width plasma processing device under normal pressure, the power board cooperates with the high-voltage cable to provide the energy required for plasma with high stability.

[0025] The ultra-high temperature DBD wide-width plasma treatment device under normal pressure uses synthetic special metals, such as hafnium alloy and other materials, for the metal parts used in the device, such as the top plate, front side plate, rear side plate, left side plate, right side plate, bottom plate and electrodes. Heat insulation plates are covered and fixed on the top plate, front side plate, rear side plate, left side plate, right side plate and bottom plate. High-temperature resistant nano-coatings are coated on the top plate, front side plate, rear side plate, left side plate, right side plate and bottom plate, so that when the temperature inside the outer shell cavity is above 1000 degrees Celsius, the surface temperature of the outer shell is controlled within 50 degrees Celsius, without affecting the operation. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The present utility model will be further described and elaborated below in conjunction with the drawings.

[0027] Figure 1 is the overall structural schematic diagram of the preferred embodiment of the present utility model;

[0028] Figure 2 is the overall exploded structural schematic diagram of the present utility model;

[0029] Figure 3 is the bottom plate upward view structural schematic diagram of the present utility model;

[0030] Figure 4 is the present utility model Figure 2 the enlarged structural schematic diagram at position A in;

[0031] Figure 5 is the present utility model Figure 3 the enlarged structural schematic diagram at position B in.

[0032] Reference numerals: 1. Outer shell; 101. Top plate; 102. Front side plate; 103. Rear side plate; 104. Left side plate; 105. Right side plate; 106. Bottom plate; 2. Inlet pipe; 3. Cyclone air distribution nozzle; 4. Power board; 5. High-energy feed inlet; 6. Air distribution holes; 7. High-temperature resistant ceramic column; 8. Spring; 9. Copper column; 10. Ceramic electric heating tube; 11. Temperature-resistant heat-insulating plate; 12. Quartz insulating plate. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0033] The technical solutions of the present utility model will be described more clearly and completely below in conjunction with the drawings and through the description of the preferred embodiments of the present utility model.

[0034] Such as Figures 1 - 5As shown in the figure, a wide-width plasma treatment device of DBD type under normal pressure and ultra-high temperature in a preferred embodiment of the present utility model includes a housing 1 with a hollow inner cavity and a square cross-section. The housing 1 is composed of a top plate 101, a front side plate 102, a rear side plate 103, a left side plate 104, a right side plate 105 and a bottom plate 106 which are of an integrated structure. The front side plate 102, the rear side plate 103, the left side plate 104 and the right side plate 105 form a square frame structure, and the top plate 101 and the bottom plate 106 are respectively connected to the top and bottom of the front side plate 102, the rear side plate 103, the left side plate 104 and the right side plate 105.

[0035] As Figure 1 and Figure 2 shown, a plurality of air inlet pipes 2 fixedly connected to the top plate 101 penetrate through the top plate 101. The plurality of air inlet pipes 2 are arranged in an array along the long side direction of the top plate 101. The air inlet ends of each air inlet pipe 2 are communicated with a high-temperature gas input pipeline, and the air outlet ends are integrated with a cyclone air distribution nozzle 3 located in the inner cavity of the housing 1. The cyclone air distribution nozzle 3 is an existing device, so no more details will be described here. High-temperature air flow enters the air inlet pipes 2 and is ejected through the cyclone air distribution nozzle 3. By setting the cyclone air distribution nozzle 3, it is convenient to eject a rotating high-temperature air flow in the inner cavity of the housing 1. The air flow below the cyclone air distribution nozzle 3 will also continuously rotate, and the outlet air flow will also drive the surrounding air to flow, realizing a large air amplification ratio.

[0036] As Figure 1 and Figure 2 shown, a high-energy feed inlet 5 is further provided on the top plate 101 beside the plurality of cyclone air distribution nozzles 3. A high-voltage cable is provided in the high-energy feed inlet 5. One end of the high-voltage cable is electrically connected to a power board 4 located in the inner cavity of the housing 1. The power board 4 is fixed to the inner cavity of the housing 1 and is located below the plurality of cyclone air distribution nozzles 3. The device is powered by a 30 - 50KHz power supply, and cooperates with the power board to provide the energy required for plasma with high stability.

[0037] As Figure 1 and Figure 2 and Figure 4 and Figure 5 shown, the bottom plate 106 is specifically a gas distribution traction plate. A plurality of gas distribution holes 6 are uniformly penetrated through the bottom plate 106. A plurality of high-temperature resistant ceramic columns 7 corresponding to the gas distribution holes 6 one by one are integrated on the bottom plate 106. The inner cavity of each high-temperature resistant ceramic column 7 is hollow and is arranged circumferentially around the gas distribution hole 6. The high-temperature resistant ceramic column 7 communicates the gas distribution hole 6 and the inner cavity of the housing 1. The plasma gas in the inner cavity of the housing 1 can only pass through the high-temperature resistant ceramic column 7 to penetrate out of the housing 1. The high-temperature resistant ceramic column 7 serves as a non-metallic insulating medium to ensure the long-term stability of the device during use.

[0038] As Figure 1 and Figure 2 and Figure 4 and Figure 5, each high-temperature resistant ceramic column 7 is provided with an electrode, a spring 8 is fixed on the electrode, one end of the spring 8 extends out of the high-temperature resistant ceramic column 7, and a copper column 9 is fixed at the end of the spring 8 extending out of the high-temperature resistant ceramic column 7. The end of the copper column 9 far from the spring 8 is electrically connected to the power board 4.

[0039] As Figure 1 and Figure 2 and Figure 4 and Figure 5 , it is powered by a 30 - 50KHz power supply. The output voltage is conducted to the power board 4 through a high-voltage cable. The power is adjusted through the power board 4 and conducted to the electrode through the cooperation of the copper column 9 and the spring 8, so that the high-temperature resistant ceramic column 7 wrapping the electrode is polarized, electron aggregation occurs on the surface, and finally a large number of charged particles diffuse to form macroscopic continuous discharge. The high-temperature resistant ceramic column 7 can limit the discharge from converting into an arc and maintain stable glow plasma discharge to ensure the processing uniformity.

[0040] As Figure 1 and Figure 2 and Figure 3 and Figure 4 and Figure 5 , in order to reduce the possibility that the temperature of the plasma gas is lower than 500 °C, the plasma activity is insufficient, and the functional requirements cannot be met. Therefore, a ceramic electric heating tube 10 is fixed along the long side direction of the inner cavity of the outer shell 1. The ceramic electric heating tube 10 is located between several high-temperature resistant ceramic columns 7. By setting the ceramic electric heating tube 10, the process gas entering the inner cavity of the outer shell 1 is heated to achieve ultra-high temperature plasma treatment, increasing the ion activity. The ceramic electric heating tube 10 uses good ceramics as the outer packaging to play an insulating role, with a high-quality electric heating wire wound around it, having the advantages of relatively low power demand, energy saving, fast heating, high electro-thermal conversion rate, high temperature resistance, no pollution, and not easy to corrode.

[0041] As Figure 1 and Figure 2 and Figure 3 and Figure 4 and Figure 5 , the traditional power board 4 is not heat-resistant. In order to increase the service life of the power board 4, a heat-resistant and heat-insulating plate 11 and a quartz insulating plate 12 for isolating heat radiation are sequentially fixed from top to bottom in the inner cavity of the outer shell 1. The power board 4 is located between the heat-resistant and heat-insulating plate 11 and the quartz insulating plate 12. The high-voltage cable passes through the heat-resistant and heat-insulating plate 11 and is connected to the power board 4. The spring 8 connects the electrode and the quartz insulating plate 12, and the copper column 9 passes through the quartz insulating plate 12 and is connected to the power board 4. Through holes for gas to pass through are provided on the heat-resistant and heat-insulating plate 11, the power board 4, and the quartz insulating plate 12.

[0042] As Figure 1 and Figure 2 and Figure 3 and Figure 4 and Figure 5, since the plasma gas needs to reach an ultra-high temperature of 1500 °C, the metal parts used in the device, such as the top plate 101, the front side plate 102, the rear side plate 103, the left side plate 104, the right side plate 105, the bottom plate 106 and the electrodes, etc., all use synthetic special metals, such as hafnium alloy and other materials. Heat insulation plates are fixed on the top plate 101, the front side plate 102, the rear side plate 103, the left side plate 104, the right side plate 105 and the bottom plate 106, and high-temperature resistant nano-coatings are coated on the top plate 101, the front side plate 102, the rear side plate 103, the left side plate 104, the right side plate 105 and the bottom plate 106, so that when the temperature inside the cavity of the outer shell 1 is above 1000 degrees Celsius, the surface temperature of the outer shell 1 is controlled within 50 degrees Celsius.

[0043] During use, the device is turned on, and the gas heating device outside the device stably heats the gas that needs to enter the inner cavity of the outer shell 1 to 1000 - 1200 °C, and then conveys the heated gas into the inner cavity of the outer shell 1 through the intake pipe 2. A throttle valve for controlling the flow rate is provided on the intake pipe 2, and the gas passes through the intake pipe 2 and is ejected through the cyclone air distribution nozzle 3;

[0044] Powered by a 30 - 50 KHz power supply, the output voltage is conducted to the power board 4 through a high-voltage cable. The power is adjusted through the power board 4 and conducted to the electrode through the cooperation of the copper column 9 and the spring 8, so that the high-temperature resistant ceramic column 7 wrapping the electrode is polarized, electron aggregation occurs on the surface, and finally a large number of charged particles diffuse to form a macroscopic continuous discharge. Combined with the input gas, a large number of plasmas are formed. The process gas entering the inner cavity of the outer shell 1 is heated by the ceramic electric heating tube 10 to achieve ultra-high temperature plasma treatment, increasing the ion activity. The high-temperature plasma passes through the high-temperature resistant ceramic column 7 and passes through the air distribution holes 6 to penetrate the outer shell 1, and the plasma penetrating the outer shell 1 cleans the material located below the outer shell 1, changing the non-hydrophilic characteristics of the surface of the special polymer material.

[0045] The above specific embodiments only describe the preferred embodiments of the present invention, rather than limiting the protection scope of the present invention. Without departing from the design concept and spirit scope of the present invention, various deformations, substitutions and improvements made by those of ordinary skill in the art to the technical solutions of the present invention according to the text description and drawings provided by the present invention shall all fall within the protection scope of the present invention. The protection scope of the present invention is determined by the claims.

Claims

1. An ultra-high temperature DBD wide-width plasma processing device under normal pressure, characterized in that: The invention comprises a shell (1) with a hollow inner cavity, an air inlet pipe (2) being provided at the top of the shell (1), one end of the air inlet pipe (2) being connected to a high-temperature gas input pipeline, and the other end of the air inlet pipe (2) extending to the inner cavity of the shell (1) and being connected to the inner cavity of the shell (1), a high-energy feed inlet (5) being provided on the shell (1), an electrode assembly cooperating with the high-energy feed inlet (5) being provided in the inner cavity of the shell (1), a plurality of air distribution holes (6) for discharging plasma for cleaning being penetrated through the bottom of the shell (1), and a ceramic electric heating tube (10) for realizing ultra-high temperature plasma treatment being provided in the inner cavity of the shell (1).

2. The ultra-high temperature DBD wide-width plasma processing device under normal pressure according to claim 1, characterized in that: The electrode assembly comprises high temperature resistant ceramic columns (7) arranged circumferentially around the air distribution holes (6); the inner cavities of the high temperature resistant ceramic columns (7) are hollow and communicate with the air distribution holes (6) and the inner cavities of the housing (1); each of the high temperature resistant ceramic columns (7) is provided with an electrode, and a spring (8) is fixed on the electrode; one end of the spring (8) extends out of the high temperature resistant ceramic column (7); one end of the spring (8) extending out of the high temperature resistant ceramic column (7) is fixed with a copper column (9); the copper column (9) and the high energy feed port (5) are connected via a connecting assembly.

3. The ultra-high temperature DBD wide-width plasma processing device under normal pressure according to claim 2, characterized in that: The connection assembly comprises a power board (4) fixed in the inner cavity of the housing (1); one end of the copper column (9) away from the spring (8) is electrically connected to the power board (4); and the power board (4) is electrically connected to the high-energy feed-in port (5) via a high-voltage cable.

4. The ultra-high temperature DBD wide-width plasma processing device under normal pressure according to claim 3, characterized in that: The inner cavity of the housing (1) is provided with a heat insulation component for protecting the power board (4).

5. The ultra-high temperature DBD wide-width plasma processing device under normal pressure according to claim 4, characterized in that: The heat insulation assembly comprises a temperature-resistant heat-resistant plate (11) fixed from top to bottom in the inner cavity of the housing (1) and a quartz insulation plate (12) for isolating thermal radiation, and the power board (4) is located between the temperature-resistant heat-resistant plate (11) and the quartz insulation plate (12).

6. The ultra-high temperature DBD wide-width plasma processing device under normal pressure according to claim 5, characterized in that: The temperature-resistant heat-resistance plate (11), the power plate (4) and the quartz insulation plate (12) are all penetrated by a plurality of through holes.

7. The ultra-high temperature DBD wide-width plasma processing device under normal pressure according to claim 1, characterized in that: A cyclone air distribution nozzle (3) is fixed to one end of the air inlet pipe (2) entering the inner cavity of the shell (1).

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