Power module comprising packaging device with inverted chip and exposed back surface
By designing a packaged device with a flip chip and exposed back in the IGBT/SiC module, and combining conductive heat dissipation components and substrate heat dissipation channels, the problem of poor heat dissipation of the module is solved, achieving more effective temperature management and device reliability improvement.
Patent Information
- Application Number
- CN202422179968.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-06
- Publication Date
- 2025-06-17
- Estimated Expiration
- 2034-09-06
AI Technical Summary
Due to poor heat dissipation function, the IGBT/SiC modules have excessive temperatures, which affects device performance and reliability, and even causes device damage.
A power module including a packaged device with a chip flip and exposed on the back is designed, and a conductive heat dissipation member is coupled to an insulated plastic seal exposed on the back of the chip, and a heat dissipation channel on the front is provided through the substrate to achieve bidirectional heat dissipation.
This design allows heat dissipation channels on both the front and back sides of the chip, effectively reducing the temperature, improving the performance and reliability of the device, and avoiding damage caused by overheating.
Smart Images
Figure CN222995398U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of integrated circuit manufacturing, in particular to a power module including a packaged device with a flip-chip and its back surface exposed. Background Art
[0002] There are many harms caused by poor heat dissipation and overheating of the T / SiC module. Firstly, the device module itself has a certain power, and this module generates heat itself. Then, the overall performance and reliability of the IGBT / SiC module are affected by temperature. Usually, design rules are used to compare the numbers of failure rates. According to the design criteria, one of the design rules shows that when the component works in an environment above 65°C, for every 10°C increase in temperature, the failure rate doubles. Therefore, heat dissipation for the IGBT / SiC module is also an extremely important task.
[0003] The IGBT / SiC module is a high-power semiconductor device, and the power loss makes it generate more heat. For example, the junction temperature of the IGBT cannot exceed 125°C and it is not suitable to work at a relatively high temperature for a long time. Generally, the power supply of the IGBT module that has not been tried is large and the switching frequency is high, resulting in relatively large power losses of the IGBT module devices. If the heat is not dissipated in time, the junction temperature of the device exceeds 125°C. The IGBT module is not suitable to work at the critical temperature for a long time. Then, the harm caused by poor heat dissipation and overheating of the IGBT / SiC module is that the damage of the IGBT affects the normal operation of the whole machine.
[0004] The reasons for overheating of the IGBT / SiC module may be too large current or too high switching frequency, but the directly influential one is the poor heat dissipation function. To allow the module to transfer heat out more effectively, corresponding heat dissipation devices will be added to make heat transfer the main way to achieve faster cooling. Therefore, the heat sink increases the heat dissipation area, but generally the heat dissipation area is only increased on one side of the chip. Then, the heat will only be conducted through one side of the chip, and there are still heat dissipation problems. Summary of the Utility Model
[0005] Aiming at the above technical problems, the purpose of the utility model patent is to provide a power module including a packaged device with a flip-chip and its back surface exposed, so that there are heat dissipation channels on both the front and back sides of the chip. The back surface of the chip is exposed outside the insulating plastic package, which can enable the back surface of the chip to dissipate heat through the connected conductive heat dissipation component and the front surface to dissipate heat through the substrate.
[0006] A power module including a packaged device with a flip-chip and its back surface exposed, comprising a shell, a substrate, at least one packaged device and an insulating protective layer;
[0007] The substrate is arranged inside the shell;
[0008] The packaged device is electrically connected to the substrate;
[0009] The encapsulated device includes at least one chip, a conductive bracket, and an insulating plastic package;
[0010] The chip is flip-chip mounted on the substrate through the conductive bracket and realizes electrical connection with the substrate;
[0011] The insulating plastic package covers the entire encapsulated device, and the back surface of the chip is exposed outside the insulating plastic package;
[0012] The insulating protective layer is located inside the package and covers all the encapsulated devices on the substrate.
[0013] Optionally, it further includes a plurality of conductive heat dissipation components;
[0014] Each of the conductive heat dissipation components corresponds to at least one encapsulated device;
[0015] Each of the conductive heat dissipation components is electrically connected to the back surface of the chip in the corresponding encapsulated device;
[0016] All the conductive heat dissipation components are electrically connected to the corresponding pins on the substrate.
[0017] Optionally, a plurality of conductive heat dissipation elements are provided inside the package;
[0018] Each conductive heat dissipation element corresponds to at least one encapsulated device;
[0019] Each conductive heat dissipation element is electrically connected to the back surface of the chip in the corresponding encapsulated device.
[0020] Preferably, the conductive heat dissipation component is a copper sheet.
[0021] Preferably, the conductive heat dissipation element is a copper sheet.
[0022] Optionally, the chip is one or more combinations of a triode, an IGBT power chip, a SIC power chip, a GAN power chip, a MOSFET power chip, and a diode.
[0023] Optionally, one or more of passive components, active components, and sensors are provided on the substrate according to the electrical function requirements.
[0024] Specifically, the insulating protective layer is a protective glue.
[0025] The power module of an encapsulated device including a flip-chip chip with its back surface exposed according to the present invention has the following advantages compared with the prior art:
[0026] (1) The encapsulation device is made by flipping the chip upside down and exposing the back of the chip above the plastic package, forming the function of dual-channel heat dissipation; according to electrical requirements, at least one encapsulation device is installed on the insulated metal-clad board with a designed circuit, and is electrically connected using conductive heat dissipation components or conductive heat dissipation parts of different sizes, either individually and / or in parallel, and the electrical performance is led out to complete the production of the module;
[0027] (2) There are heat dissipation channels on both the front and back sides of the chip, and the back of the chip is exposed outside the insulated plastic package, enabling the back of the chip to dissipate heat through the connected conductive heat dissipation components and the front to dissipate heat through the substrate. Description of the Drawings
[0028] Figure 1 It is a schematic structural diagram of a power module of an encapsulation device including a flip-chip chip with its back exposed in Embodiment 1;
[0029] Figure 2 It is a schematic diagram showing the connection between an encapsulation device containing multiple chips and a conductive heat dissipation component in Embodiment 1;
[0030] Figure 3 It is a schematic diagram showing the connection between multiple encapsulation devices each containing one chip and a conductive heat dissipation component in Embodiment 1
[0031] Figure 4 It is a schematic structural diagram of a power module of an encapsulation device including a flip-chip chip with its back exposed in Embodiment 2;
[0032] Figure 5 It is a schematic diagram showing the connection between an encapsulation device containing multiple chips and a conductive heat dissipation component in Embodiment 2;
[0033] Figure 6 It is a schematic diagram showing the connection between multiple encapsulation devices each containing one chip and a conductive heat dissipation component in Embodiment 2. Detailed Description of the Embodiments
[0034] The following further elaborates in detail the specific embodiments of the patent of the present utility model in conjunction with the drawings.
[0035] Embodiment 1
[0036] In this embodiment, a triode or a diode is taken as an example of the chip.
[0037] As Figure 1 shown, a power module of an encapsulation device including a flip-chip chip with its back exposed includes a tube shell 1, a substrate 2, at least one encapsulation device 3, and an insulating protective layer (not shown in the figure);
[0038] The substrate 2 is disposed inside the tube shell 1;
[0039] The encapsulated device 3 is electrically connected to the substrate 2;
[0040] The encapsulated device 3 includes a triode 4, a diode 5, a conductive bracket 6, and an insulating plastic package 7;
[0041] Both the triode 4 and the diode 5 are flip-chip mounted on the substrate 2 through the conductive bracket 6 and are electrically connected to the substrate 2;
[0042] The insulating plastic package 7 covers the entire encapsulated device 3, and the backs of the triode 4 and the diode 5 are exposed outside the insulating plastic package 7;
[0043] The insulating protective layer is located inside the tube shell 1 and covers all the encapsulated devices 3 on the substrate 2.
[0044] In this embodiment, as Figure 2 shown, a power module including an encapsulated device with flip-chip and its back exposed further includes a plurality of conductive heat dissipation members 8; each of the conductive heat dissipation members 8 corresponds to at least one encapsulated device; each of the conductive heat dissipation members 8 is electrically connected to the back of the chip (triode 4, diode 5) in the corresponding encapsulated device; all the conductive heat dissipation members 8 are electrically connected to the corresponding pins on the substrate 2, and the electrical connection can be led out through pins or terminals on the corresponding electrodes of the substrate 2.
[0045] In this embodiment, the conductive heat dissipation member 8 is a copper sheet, which has better conductive heat dissipation performance compared with traditional aluminum wires.
[0046] In addition, the chip is one or a combination of a triode, an IGBT power chip, a SIC power chip, a GAN power chip, a MOSFET power chip, and a diode.
[0047] In this embodiment, one or more of passive components, active components, and sensors are provided on the substrate 1 according to the electrical function requirements, and whether to perform the above design can be determined according to actual needs.
[0048] In this embodiment, the insulating protective layer is a protective glue.
[0049] Its preparation process flow is as follows,
[0050] S1. Print a connection material on the upper surface of the pins of the conductive bracket;
[0051] S2. Flip-chip mount the chip on the upper surface of the connection material of the conductive bracket;
[0052] S3. Wrap the inverted-mounted product with an insulating material to expose the pins of the conductive bracket and the back of the chip, realizing two-way heat conduction up and down;
[0053] S4. Assemble the packaged device 3 onto the substrate 1 with designed circuits.
[0054] S5. One packaged device is electrically connected to the module circuit using a conductive heat dissipation component. After multiple packaged devices are assembled, they are connected in parallel using conductive heat dissipation components and electrically connected to the module circuit on the substrate.
[0055] S6. Inside the package 1, fill with protective glue or use the method of secondary plastic encapsulation to achieve overall protection of the internal structure. Among them, the upper surface of the metal conductive component in the packaged device is inside or outside the protective glue, or inside or outside the secondary plastic encapsulation layer. Or use the injection molding encapsulation method to integrally protect the packaged device and the passive components, active components, and sensor components required for the function together.
[0056] In addition, a single packaged device contains only one chip, and the connection between the conductive heat dissipation component and the chip is as Figure 3 shown.
[0057] The method of the packaged device is to flip the chip upside down and expose the back of the chip above the plastic package, forming the function of dual-channel heat dissipation; according to electrical requirements, at least one packaged device is installed on the metal-clad laminate with designed circuits, and is electrically connected using conductive heat dissipation components of different sizes, individually and / or in parallel, and the electrical performance is led out to complete the production of the module.
[0058] Embodiment 2
[0059] In this embodiment, take the chip as a triode or a diode as an example.
[0060] As Figure 4 and Figure 5 shown, a power module including a packaged device with a flipped chip and its back exposed. There are several conductive heat dissipation parts 9 inside the package 1; each conductive heat dissipation part 9 corresponds to at least one packaged device 3; each conductive heat dissipation part 9 is electrically connected to the back of the chip in the corresponding packaged device 3. The rest of the technical features are the same as those in Embodiment 1.
[0061] After the packaged device 3 with the chip flipped upside down is set on the substrate 1, the backs of multiple chips are directly connected and electrically conducted through the conductive heat dissipation parts 9. The designer can choose Embodiment 1 or Embodiment 2 according to actual needs.
[0062] In addition, a single packaged device contains only one chip, and the connection between the conductive heat dissipation part 9 and the chip is as Figure 6 shown
[0063] The preferred embodiments of the present utility model have been specifically described above. However, the present utility model is not limited to the described embodiments. Those skilled in the art can make various equivalent modifications or substitutions without departing from the spirit of the present utility model, and these equivalent modifications or substitutions are all included within the scope defined by the claims of this application.
Claims
1. A power module comprising a packaged device with a flip-chip and an exposed back side, characterized in that: It includes a tube shell, a substrate, at least one packaging device and an insulating protective layer; The substrate is disposed in the tube shell; The packaging device is electrically connected to the substrate; The packaged device comprises at least one chip, a conductive support and an insulating plastic package; The chip is flip-mounted on the conductive support; The insulating plastic package body covers the entire packaged device, and the back side of the chip and the pins of the conductive bracket are exposed outside the insulating plastic package body; The insulating protection layer is located in the tube shell and covers all packaged devices on the substrate.
2. A power module comprising a packaged device with a flip-chip and an exposed back side as claimed in claim 1, characterized in that: Also includes a number of conductive heat dissipation components; Each of the conductive heat dissipation components corresponds to at least one packaged device; Each of the conductive heat dissipation components is electrically connected to the back surface of the chip in the corresponding packaged device; All the conductive heat dissipation components are electrically connected to corresponding pins on the substrate.
3. A power module comprising a packaged device with a flip-chip and an exposed back side as claimed in claim 1, characterized in that: A plurality of conductive heat dissipating components are arranged in the tube shell; Each conductive heat sink corresponds to at least one packaged device; Each conductive heat sink is electrically connected to the back surface of the chip in the corresponding package device.
4. A power module comprising a packaged device with a flip-chip and an exposed back side as claimed in claim 2, characterized in that: The conductive heat dissipation component is a copper sheet.
5. A power module comprising a packaged device with a flip-chip and an exposed back side as claimed in claim 3, characterized in that: The conductive heat sink is a copper sheet.
6. A power module comprising a packaged device with a flip-chip and an exposed back side as claimed in claim 1, characterized in that: The chip is one or more combinations of a triode, an IGBT power chip, a SIC power chip, a GAN power chip, a MOSFET power chip, and a diode.
7. A power module comprising a packaged device with a flip-chip and an exposed back side as claimed in any one of claims 1 to 6, characterized in that: The substrate is provided with one or more of passive components, active components and sensors according to electrical function requirements.
8. A power module comprising a packaged device with a flip-chip and an exposed back side as claimed in claim 1, characterized in that: The insulating protective layer is protective glue.