Voltage equalizing device of power semiconductor device

Abstract

The utility model relates to a voltage-sharing device for power semiconductor devices, which comprises a press-fitting clamp, a plurality of power semiconductor devices and a plurality of voltage-sharing loops, and is characterized in that the press-fitting clamp comprises a plurality of press-fitting blocks, each power semiconductor device is arranged between the corresponding adjacent press-fitting blocks, and each voltage-sharing loop is connected with the corresponding power semiconductor device in parallel. In the voltage-sharing device, the voltage-sharing loop is directly and electrically connected with the press-fitting clamp and the power semiconductor device, so that the voltage-sharing loop is closer to the press-fitting clamp, the compact layout of the whole structure of the series voltage-sharing clamp is realized, and the size of the series voltage-sharing clamp is reduced.

Description

Technical Field

[0001] This application relates to the field of power electronics technology, and particularly to a voltage equalizing device for power semiconductor devices. Background Art

[0002] Series and parallel connection of power semiconductor devices is currently the main combination method for realizing high-voltage and high-power DC circuit breakers and power electronic converters. When power semiconductor devices are connected in series, due to reasons such as individual performance differences and inconsistent peripheral circuit parameters, the phenomenon of uneven voltage distribution will occur on the devices. Therefore, it is necessary to carry out voltage equalizing design for series applications of devices.

[0003] However, in related technologies, the structure of the series voltage equalizing device is relatively complex, and there are problems of large volume and low integration. Summary of the Invention

[0004] Based on this, in view of the above technical problems, it is necessary to provide a voltage equalizing device for power semiconductor devices with a simplified structure.

[0005] In a first aspect, this application provides a voltage equalizing device for power semiconductor devices, which includes: a press-fitting fixture, a plurality of power semiconductor devices, and a plurality of voltage equalizing circuits; the press-fitting fixture includes a plurality of press-fitting blocks, each power semiconductor device is arranged between corresponding adjacent press-fitting blocks, and each voltage equalizing circuit is connected in parallel with the corresponding power semiconductor device.

[0006] In one embodiment, the press-fitting fixture further includes: a first fixing plate and a second fixing plate; the first fixing plate is arranged on the surface of the first press-fitting block facing away from the power semiconductor device; the second fixing plate is arranged on the surface of the second press-fitting block facing away from the power semiconductor device; the first press-fitting block is the press-fitting block at the top position among the plurality of press-fitting blocks, and the second press-fitting block is the press-fitting block at the bottom position among the plurality of press-fitting blocks.

[0007] In one embodiment, the press-fitting fixture further includes a locking component; the locking component is arranged between the first fixing plate and the first press-fitting block.

[0008] In one embodiment, the press-fitting fixture further includes: an elastic component; the elastic component is arranged between the second fixing plate and the second press-fitting block.

[0009] In one embodiment, the elastic component includes: a disc spring assembly and a sleeve; the disc spring assembly is arranged inside the sleeve.

[0010] In one embodiment, the press-fitting fixture further includes a support column; the support column is arranged between the first fixing plate and the second fixing plate.

[0011] In one embodiment, the support column is a telescopic cylindrical rod.

[0012] In one embodiment, the voltage equalizing circuit includes: a first resistor, a second resistor, and a first capacitor; the second resistor and the first capacitor are connected in series to form a first series branch, the first resistor is connected in parallel with the first series branch, and is connected in parallel across both ends of the power semiconductor device.

[0013] In one embodiment, the voltage equalizing circuit includes: a third resistor, a fourth resistor, and a second capacitor; the fourth resistor and the second capacitor are connected in series to form a second series branch, one end of the second series branch is connected to the press-fitting block close to the first surface of the power semiconductor, the other end of the second series branch is connected to the press-fitting block close to the second surface of the power semiconductor, one end of the third resistor is connected to the press-fitting block on the first surface, and the other end of the third resistor is connected to the third resistor on the press-fitting block on the second surface.

[0014] In one embodiment, the third resistor is a static resistor, the fourth resistor is a dynamic resistor, and the second capacitor is a dynamic capacitor.

[0015] The above-mentioned voltage equalizing device for power semiconductor devices includes a press-fitting fixture, a plurality of power semiconductor devices, and a plurality of voltage equalizing circuits. Among them, the press-fitting fixture includes a plurality of press-fitting blocks, each power semiconductor device is arranged between corresponding adjacent press-fitting blocks, and each voltage equalizing circuit is connected in parallel with the corresponding power semiconductor device. In the above voltage equalizing device, the voltage equalizing circuit is directly electrically connected to the press-fitting fixture and the power semiconductor device, so that the voltage equalizing circuit is closer to the press-fitting fixture, realizing a compact layout of the overall structure of the series voltage equalizing fixture and reducing the volume of the series voltage equalizing fixture. Description of the Drawings

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0017] Figure 1 It is a structural diagram of a voltage equalizing device for power semiconductor devices in one embodiment;

[0018] Figure 2 It is a structural block diagram of a voltage equalizing circuit in one embodiment;

[0019] Figure 3 It is a structural diagram of a voltage equalizing device for power semiconductor devices in another embodiment.

[0020] Description of the Reference Numerals:

[0021] Press-fitting fixture 10; Power semiconductor device 20; Voltage equalizing circuit 30;

[0022] Pressing block 101; First fixed plate 102; Second fixed plate 103;

[0023] Support column 104; Locking component 105; Elastic component 106;

[0024] Disc spring assembly 1061; Sleeve 1062; Third resistor 301;

[0025] Fourth resistor 302; Second capacitor 303. Detailed implementation manners

[0026] To facilitate the understanding of the present application, the present application will be described more comprehensively below with reference to the relevant drawings. Embodiments of the present application are shown in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the disclosure of the present application more thorough and comprehensive.

[0027] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the technical field to which this application belongs. The terms used in the specification of this application herein are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0028] It can be understood that the terms "first", "second", etc. used in the present application can be used herein to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish the first element from another element. For example, without departing from the scope of the present application, the first resistor can be referred to as the second resistor, and similarly, the second resistor can be referred to as the first resistor. Both the first resistor and the second resistor are resistors, but they are not the same resistor.

[0029] It can be understood that "connection" in the following embodiments should be understood as "electrical connection", "communication connection", etc. if there is an electrical signal or data transfer between the connected circuits, modules, units, etc.

[0030] It can be understood that "at least one" means one or more, and "a plurality" means two or more. "At least part of an element" means part or all of the element.

[0031] As used herein, the singular forms "a", "an" and "the" may also include the plural forms unless the context clearly dictates otherwise. It should also be understood that the terms "comprising", "including" or "having" and the like specify the presence of the stated features, integers, steps, operations, components, parts or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts or combinations thereof. At the same time, the term "and / or" used in this specification includes any and all combinations of the related listed items.

[0032] First, before specifically introducing the technical solutions of the embodiments of the present disclosure, the technical background or the technical evolution context on which the embodiments of the present disclosure are based will be introduced. The series and parallel connection of power semiconductor devices is currently the main combination method for realizing high-voltage and high-power DC circuit breakers and power electronic converters. When power semiconductor devices are operated in series, due to reasons such as individual performance differences and inconsistent peripheral circuit parameters, the phenomenon of uneven voltage distribution will occur on the devices. Therefore, it is necessary to carry out voltage equalization design for the series application of devices. However, in the related art, the structure of the series voltage equalization device is relatively complex, and there are problems of large volume and low integration.

[0033] In one embodiment, as Figure 1 shown, a voltage equalization device for power semiconductor devices is provided. The voltage equalization device includes: a press-fitting fixture 10, a plurality of power semiconductor devices 20, and a plurality of voltage equalization circuits 30.

[0034] Among them, the press-fitting fixture 10 includes a plurality of press-fitting blocks 101. Each power semiconductor device 20 is disposed between corresponding adjacent press-fitting blocks 101. Each voltage equalization circuit 30 is connected in parallel with the corresponding power semiconductor device 20. The components in the press-fitting fixture 10, the plurality of power semiconductor devices 20, and the plurality of voltage equalization circuits 30 can be connected by wires or by metal gaskets.

[0035] The above-mentioned plurality of press-fitting blocks 101 may include a first press-fitting block 101, a second press-fitting block 101 -... - an Nth press-fitting block 101. The number of press-fitting blocks 101 can be set according to requirements, and this embodiment does not make a limitation. Preferably, the number of press-fitting blocks 101 is greater than or equal to two. The material of each press-fitting block 101 can be a metal material or a non-metal material, and the specific material can be set according to actual needs, and this embodiment does not make a limitation. The materials of each press-fitting block 101 can be the same or different. The shape of each press-fitting block 101 can be circular, square, rectangular, or other shapes, and the specific shape can be set according to actual needs, and this embodiment does not make a limitation. Each press-fitting block 101 can be an independent component (see the second press-fitting block 101 in Figure 1 ), or it can be a component after a combination of multiple components (seeFigure 1 The uppermost pressing block 101) in [description], for example, the pressing block 101 is composed of a pressing block body and a connecting block arranged thereon for realizing electrical connection. The shapes of the pressing blocks 101 can be the same or different. Each pressing block 101 can be arranged at different positions according to requirements. For example, the first pressing block 101 is used as the top pressing block 101 of the pressing fixture 10, the second pressing block 101 is used as the bottom pressing block 101 of the pressing fixture 10, and the other pressing blocks 101 are used as the middle pressing blocks 101 of the pressing fixture 10. The above-mentioned multiple pressing blocks 101 are used to fix the power semiconductor device 20 so that the voltage equalization circuit 30 can perform voltage equalization tests on the power semiconductor device 20.

[0036] The above-mentioned power semiconductor device 20 includes at least two upper and lower electrodes. Each power semiconductor device 20 can be the same or different. The above-mentioned power semiconductor device 20 can be a power semiconductor device 20 such as a press-pack diode, an integrated gate-commutated thyristor (abbreviated as IGCT), an insulated gate bipolar transistor (abbreviated as IGBT), etc.

[0037] Each of the above-mentioned power semiconductor devices 20 is arranged between the pressing blocks 101. For example, the positional relationship between the pressing block 101 and the power semiconductor device 20 is: the first pressing block 101 - the power semiconductor device 20 - the Nth pressing block 101 - the power semiconductor device 20 -... - the second pressing block 101, and electrical interconnection is achieved by applying a longitudinal pressure to the pressing fixture 10. Preferably, two adjacent pressing blocks 101 are respectively connected to the upper electrode and the lower electrode of the power semiconductor device 20 and provide lead terminals.

[0038] The above-mentioned voltage equalization circuit 30 can be directly connected in parallel with the power semiconductor device 20, or can be connected in parallel through two adjacent pressing blocks 101. The number of the above-mentioned voltage equalization circuits 30 can be set according to requirements, which is not limited in this embodiment. Preferably, the number of the voltage equalization circuits 30 is the same as the number of the power semiconductor devices 20, and the number of the voltage equalization circuits 30 is greater than or equal to two.

[0039] In the voltage equalization device of the power semiconductor device provided by the embodiment of the present application, the voltage equalization circuit is directly electrically connected to the pressing fixture and the power semiconductor device, so that the voltage equalization circuit is closer to the pressing fixture, realizing a compact layout of the overall structure of the series voltage equalization fixture and reducing the volume of the series voltage equalization fixture.

[0040] In one embodiment, the above-mentioned pressing fixture 10 further includes: a first fixing plate 102 and a second fixing plate 103.

[0041] Among them, the first fixing plate 102 is arranged on the surface of the first pressing block 101 facing away from the power semiconductor device 20, that is, the top of the pressing fixture 10. The second fixing plate 103 is arranged on the surface of the second pressing block 101 facing away from the power semiconductor device 20, the bottom of the pressing fixture 10. The first pressing block 101 is the pressing block 101 at the top position among the multiple pressing blocks 101, that is, the top pressing block 101 of the pressing fixture 10, and the second pressing block 101 is the pressing block 101 at the bottom position among the multiple pressing blocks 101, that is, the bottom pressing block 101 of the pressing fixture 10. The second fixing plate 103 is used to fixedly support the entire pressing fixture 10.

[0042] The materials of the above-mentioned first fixing plate 102 and second fixing plate 103 can be metal materials or non-metal materials. The specific materials can be set according to actual needs and are not limited in this embodiment. Preferably, the materials of the first fixing plate 102 and second fixing plate 103 are metal materials. The materials of the first fixing plate 102 and second fixing plate 103 can be the same or different. The shapes of the first fixing plate 102 and second fixing plate 103 can be circular, square, rectangular, or other shapes. The specific shapes can be set according to actual needs and are not limited in this embodiment. The shapes of the first fixing plate 102 and second fixing plate 103 can be the same or different.

[0043] The positional relationship of the above-mentioned voltage equalizing device for the power semiconductor device is: first fixing plate 102 - first pressing block 101 - power semiconductor device 20 - the Nth pressing block 101 -... - power semiconductor device 20 - second pressing block 101 - second fixing plate 103.

[0044] On this basis, the above-mentioned pressing fixture 10 further includes a support column 104; the support column 104 is arranged between the first fixing plate 102 and the second fixing plate 103.

[0045] The above-mentioned support column 104 is a telescopic cylindrical rod, or the support column 104 is a non-telescopic cylindrical rod. The material of the above-mentioned support column 104 can be a metal material or a non-metal material. The specific material can be set according to actual needs and is not limited in this embodiment. Preferably, the material of the support column 104 is an insulating material. The materials of the above-mentioned support column 104, first fixing plate 102, and second fixing plate 103 can be the same or different. The shape of the above-mentioned support column 104 can be a cylinder, a prism, or other shapes. The specific shape can be set according to actual needs and is not limited in this embodiment. The positional relationship of the above-mentioned voltage equalizing device for the power semiconductor device is: first fixing plate 102 - support column 104 - second fixing plate 103.

[0046] In one embodiment, the above-mentioned press-fitting fixture 10 further includes a locking member 105.

[0047] Among them, the locking member is arranged between the first fixing plate 102 and the first press-fitting block 101. The locking member is used for locking the press-fitting fixture 10 and keeping the press-fitting fixture 10 at a specified pressure value after applying a specified pressure.

[0048] The material of the above-mentioned locking member 105 can be a metal material or a non-metal material. The specific material can be set according to actual needs and is not limited in this embodiment. The materials of the above-mentioned locking member 105, support column 104, first fixing plate 102 and second fixing plate 103 can be the same or different. The shape of the above-mentioned locking member 105 can be circular, rectangular, or other shapes. The specific shape can be set according to actual needs and is not limited in this embodiment. The positional relationship of the voltage equalizing device of the above-mentioned power semiconductor device is: first fixing plate 102 - locking member 105 - first press-fitting block 101 - power semiconductor device 20 - Nth press-fitting block 101 -... - power semiconductor device 20 - second press-fitting block 101 - second fixing plate 103.

[0049] On this basis, the above-mentioned press-fitting fixture 10 further includes: an elastic member 106.

[0050] Among them, the elastic member 106 is arranged between the second fixing plate 103 and the second press-fitting block 101. The elastic member 106 includes: a disc spring assembly 1061 and a sleeve 1062, and the disc spring assembly 1061 is arranged inside the sleeve 1062. When there is no elastic member 106, since the structure is a rigid structure, when a longitudinal pressure is applied to the press-fitting fixture 10, the deformation generated is small, and the locking member 105 only needs to twist a very small position, and there will be a situation of longitudinal pressure loss. The elastic member 106 is used to generate deformation when a longitudinal pressure is applied to the press-fitting fixture 10, so that the locking member 105 can twist a larger position. Therefore, the loss of longitudinal pressure can be avoided to ensure the stability of the longitudinal pressure and enable the power semiconductor device 20 to perform voltage equalizing tests under a fixed longitudinal pressure. The elastic modulus of the elastic member 106 can be set according to actual needs.

[0051] The positional relationship of the voltage equalizing device of the above-mentioned power semiconductor device is: first fixing plate 102 - locking member 105 - first press-fitting block 101 - power semiconductor device 20 - Nth press-fitting block 101 -... - power semiconductor device 20 - second press-fitting block 101 - second fixing plate 103 - elastic member 106.

[0052] In one example, as Figure 2 shown, the above-mentioned voltage equalizing circuit 30 includes: a third resistor 301, a fourth resistor 302 and a second capacitor 303.

[0053] Among them, the fourth resistor 302 and the second capacitor 303 are connected in series to form a second series branch. One end of the second series branch is connected to the press-fitting block 101 close to the first surface of the power semiconductor, and the other end of the second series branch is connected to the press-fitting block 101 close to the second surface of the power semiconductor. One end of the third resistor 301 is connected to the press-fitting block 101 on the first surface, and the other end of the third resistor 301 is connected to the third resistor 301 on the press-fitting block 101 on the second surface.

[0054] The resistance values of the above-mentioned first resistor, second resistor, third resistor 301, and fourth resistor 302 can be set according to actual needs, and are not limited in this embodiment. The resistance values of the first resistor, second resistor, third resistor 301, and fourth resistor 302 can be the same or different. The third resistor 301 and the fourth resistor 302 can be static resistors or dynamic resistors. Preferably, the third resistor 301 is a static resistor and the fourth resistor 302 is a dynamic resistor. The capacitance value of the second capacitor 303 can be set according to actual needs, and is not limited in this embodiment.

[0055] In the embodiment of the present application, the voltage equalization circuit 30 is connected to the power semiconductor device 20 through the first press-fitting block 101 and the second press-fitting block 101. Specifically, the bottom surface of the first resistor can be fixed to the first press-fitting block 101 by screws, and the first press-fitting block 101 (made of metal) can provide good heat dissipation for the first resistor. The third resistors 301 on two adjacent press-fitting blocks 101 can be connected through a metal connecting piece or a wire.

[0056] Optionally, the above-mentioned voltage equalization circuit 30 includes a first resistor, a second resistor, and a first capacitor.

[0057] Among them, the second resistor and the first capacitor are connected in series to form a first series branch, the first resistor is connected in parallel with the first series branch, and is connected in parallel at both ends of the power semiconductor device 20.

[0058] The resistance values of the above-mentioned first resistor and second resistor can be set according to actual needs, and are not limited in this embodiment. The resistance values of the first resistor and the second resistor can be the same or different. The first resistor and the second resistor can be static resistors or dynamic resistors. Preferably, the first resistor is a static resistor and the second resistor is a dynamic resistor. The capacitance value of the first capacitor can be set according to actual needs, and is not limited in this embodiment.

[0059] In the embodiment of the present application, the voltage equalization circuit 30 is directly connected to the power semiconductor device 20.

[0060] Combining all the above embodiments, the present application also provides a voltage equalization device for a power semiconductor device, as Figure 3As shown in the figure, the voltage equalizing device includes: a press-fitting fixture 10, four power semiconductor devices 20, and four voltage equalizing circuits 30.

[0061] The above-mentioned press-fitting fixture 10 includes: a first fixing plate 102, support columns 104, a locking component 105, five press-fitting blocks 101, an elastic component 106, and a second fixing plate 103.

[0062] Among them, the first fixing plate 102 is made of a metal material and has a square shape. The support columns 104 are made of an insulating material and have a cylindrical shape. The locking component 105 is made of a metal material and has a cubic shape. The press-fitting blocks 101 are made of a metal material and have a cubic shape. The multiple press-fitting blocks 101 are the first press-fitting block 101, the third press-fitting block 101, the fourth press-fitting block 101, the fifth press-fitting block 101, and the second press-fitting block 101. The elastic component 106 includes a disc spring assembly 1061 and a sleeve 1062, and the disc spring assembly 1061 is arranged inside the sleeve 1062. The second fixing plate 103 is made of a metal material and has a square shape.

[0063] Each component in the press-fitting fixture 10, the multiple power semiconductor devices 20, and the multiple voltage equalizing circuits 30 can be connected by wires or by metal gaskets. Each power semiconductor device 20 is arranged between the corresponding adjacent press-fitting blocks 101, and each voltage equalizing circuit 30 is connected in parallel with the corresponding power semiconductor device 20. The first fixing plate 102 is arranged on the surface of the first press-fitting block 101 facing away from the power semiconductor device 20, that is, the top of the press-fitting fixture 10. The second fixing plate 103 is arranged on the surface of the second press-fitting block 101 facing away from the power semiconductor device 20, the bottom of the press-fitting fixture 10. The first press-fitting block 101 is the press-fitting block 101 located at the top position among the multiple press-fitting blocks 101, that is, the top press-fitting block 101 of the press-fitting fixture 10, and the second press-fitting block 101 is the press-fitting block 101 located at the bottom position among the multiple press-fitting blocks 101, that is, the bottom press-fitting block 101 of the press-fitting fixture 10. The second fixing plate 103 is used to fixedly support the entire press-fitting fixture 10. The support columns 104 are arranged between the first fixing plate 102 and the second fixing plate 103. The locking component 105 is arranged between the first fixing plate 102 and the first press-fitting block 101. The locking component 105 is used to lock the press-fitting fixture 10 and keep the press-fitting fixture 10 at a specified pressure value after applying a specified pressure. The elastic component 106 is arranged between the second fixing plate 103 and the second press-fitting block 101. The elastic component 106 is used to deform when a longitudinal pressure is applied to the press-fitting fixture 10, so as to buffer the stress of the entire voltage equalizing device.

[0064] The above-mentioned voltage-sharing circuit 30 includes a third resistor 301, a fourth resistor 302, and a second capacitor 303. Among them, the fourth resistor 302 and the second capacitor 303 are connected in series to form a second series branch. One end of the second series branch is connected to the press-fitting block 101 close to the first surface of the power semiconductor, and the other end of the second series branch is connected to the press-fitting block 101 close to the second surface of the power semiconductor. One end of the third resistor 301 is connected to the press-fitting block 101 on the first surface, and the other end of the third resistor 301 is connected to the third resistor 301 on the press-fitting block 101 on the second surface. The third resistor 301 is a static resistor, the fourth resistor 302 is a dynamic resistor, and the second capacitor 303 is a dynamic capacitor.

[0065] In the voltage-sharing device of the power semiconductor device provided by the embodiment of the present application, the voltage-sharing circuit is directly electrically connected to the press-fitting fixture and the power semiconductor device through a metal connecting piece. The voltage-sharing circuit is closer to the press-fitting fixture, realizing a compact layout of the overall structure of the series voltage-sharing fixture and reducing the volume of the series voltage-sharing fixture.

[0066] Since the static voltage-sharing resistor bears the steady-state voltage, compared with other voltage-sharing elements, there is a large thermal power consumption. Fixing the bottom surface of the static voltage-sharing first resistor to the first press-fitting block made of metal material with screws can provide good heat dissipation for the first resistor and improve the reliability of the system. By adjusting the size and shape of the metal connecting piece, the connection of voltage-sharing circuit elements of different models to the press-fitting fixture can be realized, improving the flexibility and adjustability of the interconnection of the series voltage-sharing fixture.

[0067] In the description of this specification, the descriptions referring to terms such as "some embodiments", "other embodiments", etc. mean that the specific features, structures, materials, or features described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.

[0068] The technical features of the above embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope described in this specification.

[0069] The above-described embodiments only represent several implementation manners of the present application. Their descriptions are relatively specific and detailed, but they should not be construed as limiting the patent scope of the present application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can still be made, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the appended claims.

Claims

1. A voltage equalizing device for a power semiconductor device, characterized in that: The voltage equalizing device includes: a press-fitting fixture, multiple power semiconductor devices and multiple voltage equalizing loops; the press-fitting fixture includes multiple press-fitting blocks, each of the power semiconductor devices is arranged between corresponding adjacent press-fitting blocks, and each of the voltage equalizing loops is connected in parallel with the corresponding power semiconductor device.

2. The pressure equalizing device according to claim 1, characterized in that: The press-fitting fixture also includes: a first fixing plate and a second fixing plate; the first fixing plate is arranged on the surface of the first press-fitting block away from the power semiconductor device; the second fixing plate is arranged on the surface of the second press-fitting block away from the power semiconductor device; the first press-fitting block is the press-fitting block located at the top position among the multiple press-fitting blocks, and the second press-fitting block is the press-fitting block located at the bottom position among the multiple press-fitting blocks.

3. The pressure equalizing device according to claim 2, characterized in that: The press-fitting fixture further includes a locking component; the locking component is arranged between the first fixing plate and the first press-fitting block.

4. The pressure equalizing device according to claim 2 or 3, characterized in that: The press-fitting fixture further includes an elastic component; the elastic component is arranged between the second fixing plate and the second press-fitting block.

5. The pressure equalizing device according to claim 4, characterized in that: The elastic component comprises: a disc spring assembly and a sleeve; the disc spring assembly is arranged in the sleeve.

6. The pressure equalizing device according to claim 2, characterized in that: The press-fitting fixture further includes a support column; the support column is arranged between the first fixing plate and the second fixing plate.

7. The pressure equalizing device according to claim 6, characterized in that: The support column is a telescopic columnar rod.

8. The pressure equalizing device according to claim 1, characterized in that: The voltage equalizing circuit includes: a first resistor, a second resistor and a first capacitor; the second resistor and the first capacitor are connected in series to form a first series branch, the first resistor is connected in parallel with the first series branch, and is connected in parallel to both ends of the power semiconductor device.

9. The pressure equalizing device according to claim 1, characterized in that: The voltage-equalizing circuit includes: a third resistor, a fourth resistor and a second capacitor; the fourth resistor and the second capacitor are connected in series to form a second series branch, one end of the second series branch is connected to a press-fit block close to the first surface of the power semiconductor, the other end of the second series branch is connected to a press-fit block close to the second surface of the power semiconductor, one end of the third resistor is connected to the press-fit block on the first surface, and the other end of the third resistor is connected to the third resistor on the press-fit block on the second surface.

10. The pressure equalizing device according to claim 9, characterized in that: The third resistor is a static resistor, the fourth resistor is a dynamic resistor, and the second capacitor is a dynamic capacitor.

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