Atomic gas chamber structure

Abstract

The utility model provides an atomic gas chamber structure, which comprises a gas chamber shell used for forming a vacuum closed cavity; the heating structure main body is arranged in the air chamber shell; and the first through electrode pair is connected with the heating structure main body and is used for applying voltage to the heated structure main body to enable the heating structure main body to generate Joule heat. The atomic gas chamber structure provided by the utility model can also comprise a laser and a photoelectric detector. According to the utility model, by improving the heating mode of the atomic gas chamber, the purposes of low heating energy consumption, stable temperature control and miniaturization are achieved.

Description

Technical Field

[0001] The utility model relates to the technical field of vacuum devices, in particular to an atomic gas cell structure. Background Art

[0002] An atomic gas cell is an important quantum sensor and plays an important role in the field of quantum precision measurement devices, such as atomic clocks, atomic magnetometers, and atomic gyroscopes. The structure of devices such as atomic clocks is generally a vacuum chamber with a glass shell structure, and an atomic gas is filled in the chamber. The atomic species in the atomic gas include Rb, Cs, and He, etc. Under the excitation of an external laser or electromagnetic field, the emission energy level of the atom transitions, which can reflect signal information such as time frequency or the surrounding electromagnetic field. The signal intensity obtained from the atomic gas cell is related to the atomic density in the cell, and the atomic density is related to the saturated vapor pressure of the atomic gas in the chamber. Therefore, when the atoms in the atomic gas are used as the detected atoms, their saturated vapor pressure increases significantly with the increase in temperature. So, the atomic gas cell often needs to be heated and temperature-controlled during operation.

[0003] In existing quantum sensing devices such as atomic clocks, the heating method for the gas cell usually adopts an external heating method, by attaching a heating element to the surface of the gas cell or directly machining a heating structure on the outer shell of the gas cell for heating. Moreover, a general temperature control module also includes a temperature sensor, which is used in conjunction with the heating structure main body and can adjust the working state of the heating structure main body according to the measured temperature value to achieve the effect of stabilizing the temperature.

[0004] However, the existing heating solutions have the following obvious problems: First, high power consumption: The purpose of the heating structure main body is to make the inside of the gas chamber reach a higher temperature. However, there is a glass shell between the inside of the gas chamber and the outside air. Since glass is a poor conductor of heat, a temperature difference will be formed between the two. At the same time, the heating structure main body itself is in the outside air, and a large amount of heat energy is conducted away from the air outside the gas chamber and the lead wires and other parts. Therefore, under the combined action of the temperature difference and heat dissipation, it is easy to cause low energy utilization efficiency and high power consumption of the heating structure main body. Second, large temperature fluctuations: The heating structure main body is in the outside air and is greatly affected by the external temperature and air flow, that is, the heat dissipation rate fluctuation of the heating structure main body is greatly affected by the outside world. The temperature control system inside the gas chamber is controlled by a feedback circuit, which causes a delay in the feedback circuit's own control of the temperature change inside the gas chamber. Therefore, the rapid fluctuation of the external temperature increases the difficulty of internal temperature control. Even when the temperature change speed in the external environment exceeds the circuit's own delay, it is simply impossible to achieve stable internal temperature control. Third, complex structure, many accessories and bulky volume: The current complete heating structure main body of the gas chamber includes heating wires, temperature sensors, lead wires and wrapping materials such as aluminum foil paper. According to the existing external heating method, wrapping materials such as aluminum foil paper are needed to completely wrap the entire gas chamber to achieve the effect of heat insulation. Another larger vacuum cavity or a suspension structure can also be introduced outside the gas chamber to further reduce heat dissipation. These heat insulation structures invariably greatly increase the overall size of the sensor part. Taking a certain commercial atomic clock as an example, the size of its gas chamber is 4mm * 4mm * 1mm, but the overall volume of the sensor part is above 30mm * 30mm * 10mm.

[0005] For quantum sensing devices such as atomic clocks, the magnitude of the internal temperature fluctuation directly affects the key index of performance stability. And for miniaturized quantum sensing devices, power consumption and volume are also one of the most critical performance indicators. Therefore, there is an urgent need for an improved heating method for the atomic gas chamber to achieve the purpose of stable temperature control, reduce the energy consumption of various quantum sensing devices, and promote their miniaturization. Summary of the Utility Model

[0006] In view of this, the embodiments of the present utility model provide an atomic gas chamber structure to improve the heating method of the atomic gas chamber, improve the performance of various quantum sensing devices, and promote the achievement of the goals of low heating energy consumption, stable temperature control and miniaturization.

[0007] One aspect of the present utility model provides an atomic gas chamber structure, which includes:

[0008] A gas chamber housing for forming a vacuum-sealed cavity;

[0009] A heating structure main body, which is placed inside the gas chamber housing;

[0010] The first pair of through electrodes is connected to the main body of the heating structure and is used to be applied with a voltage to generate Joule heat in the main body of the heating structure.

[0011] In some embodiments of the present invention, the main body of the heating structure includes a heating wire, a heating metal film or an indium tin oxide film.

[0012] In some embodiments of the present invention, grooves are provided on the inner surface of the gas chamber housing, and at least a part of the heating metal film or the indium tin oxide film is suspended through the grooves to form a heat dissipation gap; or

[0013] The heating wire is bowed in a direction away from the inner surface of the gas chamber housing corresponding to the first pair of through electrodes, so as to form a heat dissipation gap between the main body of the heating structure and the inner surface of the gas chamber housing.

[0014] In some embodiments of the present invention, the heating wire includes a parallel structure in which the current input direction is opposite to the current output direction, so as to utilize the reverse current to weaken the magnetic field generated by the current;

[0015] The laying area ratio of the heating metal film or the indium tin oxide film to the inner surface area of the gas chamber housing is 90% or less, and the length of the heating wire connected to the first pair of through electrodes is 0.1 mm - 1000 mm.

[0016] In some embodiments of the present invention, the atomic gas chamber structure further includes:

[0017] A temperature sensor located inside the gas chamber housing, and a second pair of through electrodes connected to the temperature sensor;

[0018] Wherein, the temperature sensor is a resistance temperature type sensor or a thermocouple type sensor; the resistance temperature type sensor is used to obtain the temperature value inside the gas chamber housing through the measured self-resistance value and the resistance-temperature relationship, and the thermocouple type sensor is used to obtain the temperature value inside the gas chamber housing through the measured voltage difference between its two ends.

[0019] In some embodiments of the present invention, the atomic gas chamber structure further includes:

[0020] An inert layer covering the main body of the heating structure and / or the temperature sensor; wherein, the inert layer includes a silicon oxide layer, a silicon nitride layer, an aluminum oxide layer, a titanium oxide layer, a hafnium oxide layer, an aluminum nitride layer, a yttrium oxide layer or a boron nitride layer.

[0021] In some embodiments of the present invention, the cross-sectional shape of the first pair of through electrodes and the second pair of through electrodes is circular or polygonal, the longitudinal cross-sectional shape of the first pair of through electrodes and the second pair of through electrodes is polygonal or dumbbell-shaped, and the maximum width of the longitudinal cross-section is 0.005 mm - 2 mm.

[0022] In some embodiments of the present utility model, the atomic gas cell structure further includes:

[0023] A second chamber, the second chamber includes an alkali metal atom release device, and the second chamber is communicated with the first chamber through a gas passage provided on the gas cell housing, wherein the first chamber is the chamber formed by the atomic gas cell structure described in any of the foregoing embodiments.

[0024] In some embodiments of the present utility model, the atomic gas cell structure further includes:

[0025] A laser, the laser is located inside or outside the gas cell housing, and is used for emitting laser light.

[0026] In some embodiments of the present utility model, the atomic gas cell structure further includes:

[0027] A photodetector, the photodetector is located inside or outside the gas cell housing, and is used for receiving the laser light emitted by the laser, and the laser path between the laser and the photodetector is perpendicular or parallel to the surface of the gas cell housing.

[0028] The present utility model provides an atomic gas cell structure, which uses an internal heating method to replace the original external heating of the gas cell, and ensures that a vacuum closed cavity is formed inside the gas cell through a through electrode, which can reduce the heating power consumption, reduce the fluctuation of temperature change and reduce the overall volume of the gas cell, thereby improving the overall equipment performance.

[0029] The additional advantages, objectives, and features of the present utility model will be partially described below, and will become partially obvious to those of ordinary skill in the art after studying the following text, or can be learned according to the practice of the present utility model. The objectives and other advantages of the present utility model can be achieved and obtained through the structures specifically pointed out in the specification and the drawings.

[0030] Those skilled in the art will understand that the objectives and advantages that can be achieved by the present utility model are not limited to the above specifically described, and the above and other objectives that the present utility model can achieve will be more clearly understood according to the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The drawings described herein are used to provide a further understanding of the present utility model, form a part of this application, and do not limit the present utility model. The components in the drawings are not drawn to scale, but are only for showing the principle of the present utility model. In order to facilitate showing and describing some parts of the present utility model, the corresponding parts in the drawings may be enlarged, that is, may become larger relative to other components in the exemplary device actually manufactured according to the present utility model. In the drawings:

[0032] Figure 1 This is a schematic cross-sectional structure diagram of an atomic gas cell in an embodiment of the present invention.

[0033] Figure 2 This is a schematic cross-sectional structure diagram of an atomic gas cell in another embodiment of the present invention.

[0034] Figure 3 This is a schematic longitudinal-sectional shape diagram of a first through electrode pair in an embodiment of the present invention.

[0035] Figure 4 This is a schematic cross-sectional structure diagram of an atomic gas cell with a heating wire as the main body of the heating structure in an embodiment of the present invention.

[0036] Figure 5 This is a schematic cross-sectional structure diagram of an atomic gas cell with a heating wire as the main body of the heating structure in another embodiment of the present invention.

[0037] Figure 6 This is a schematic cross-sectional structure diagram of an atomic gas cell with a heating metal film or conductive glass suspended in an embodiment of the present invention.

[0038] Figure 7 This is a schematic cross-sectional structure diagram of an atomic gas cell with a heating wire as the main body of the heating structure in another embodiment of the present invention.

[0039] Figure 8 This is a schematic working principle diagram of a heating wire as the main body of the heating structure in an embodiment of the present invention.

[0040] Figure 9 This is a schematic cross-sectional structure diagram of an atomic gas cell with a heating metal film or conductive glass covered with an inert layer as the main body of the heating structure in an embodiment of the present invention.

[0041] Figure 10 This is a schematic cross-sectional structure diagram of an atomic gas cell including multiple groups of heating structure main bodies in an embodiment of the present invention.

[0042] Figure 11 This is a top view of the inner surface of a gas cell provided with a heating structure main body and a temperature sensor in an embodiment of the present invention.

[0043] Figure 12 This is a schematic working principle diagram of a heating structure main body and a temperature sensor in an embodiment of the present invention.

[0044] Figure 13 This is a schematic cross-sectional structure diagram of an atomic gas cell in another embodiment of the present invention.

[0045] Figure 14 This is a schematic cross-sectional structure diagram of an atomic gas cell including a photodetector in an embodiment of the present invention.

[0046] Figure 15 This is a schematic cross-sectional structure diagram of an atomic gas cell including a laser and a photodetector in an embodiment of the present utility model.

[0047] Figure 16 This is a schematic flow diagram of a method for fabricating an atomic gas cell in an embodiment of the present utility model. Detailed implementation manners

[0048] To make the objectives, technical solutions and advantages of the present utility model more clearly understood, the present utility model will be further described in detail below in conjunction with the implementation manners and the drawings. Herein, the illustrative implementation manners of the present utility model and their descriptions are used to explain the present utility model, but do not limit the present utility model.

[0049] Herein, it should also be noted that, in order to avoid obscuring the present utility model due to unnecessary details, only the structures and / or processing steps closely related to the solution of the present utility model are shown in the drawings, while other details less related to the present utility model are omitted.

[0050] It should be emphasized that the term "comprising / including" when used herein refers to the presence of features, elements, steps or components, but does not exclude the presence or addition of one or more other features, elements, steps or components.

[0051] Herein, it should also be noted that, if not otherwise specified, the term "connection" in this article can refer not only to direct connection, but also to indirect connection with an intermediate.

[0052] Hereinafter, embodiments of the present utility model will be described with reference to the drawings. In the drawings, the same reference numerals represent the same or similar components, or the same or similar steps.

[0053] Existing atomic gas cells have defects such as difficult temperature control, high heating power consumption, and complex overall volume during the heating process. Based on the above defects, the present application proposes a technical solution for heating from the inside of the gas cell. By depositing a metal thin film, an ITO (Indium Tin Oxide) thin film or a heating metal wire inside the gas cell to prepare a heating structure main body, and introducing a through electrode into the gas cell housing to provide a driving voltage for the heating structure main body, the effect of directly heating the atomic gas cell from inside the gas cell is achieved, thereby greatly improving the heating effect of the gas cell and the performance of various quantum sensing devices using the atomic gas cell.

[0054] In some embodiments of the present utility model, as Figure 1 shown, the atomic gas cell structure proposed by the present application includes:

[0055] A gas chamber housing for forming a vacuum-sealed cavity; a heating structure main body 2 disposed inside the gas chamber housing; and a first pair of through electrodes 12 (including a through electrode 121 and a through electrode 122), the first pair of through electrodes 12 being connectable to the heating structure main body 2, so that a driving voltage can be applied to the heating structure main body 2 through a power supply 5 connected to the first pair of through electrodes 12, causing the heating structure main body 2 to generate heat to increase the temperature inside the gas chamber housing.

[0056] More specifically, in the present utility model, a closed atomic gas chamber can be formed by using the gas chamber housing and the through electrodes. After the first pair of through electrodes is connected to the heating structure main body by means such as vacuum welding, the first pair of through electrodes 12 can provide a voltage for the heating structure main body 2 to generate Joule heat, so as to increase the temperature in the vacuum atomic gas chamber.

[0057] In some embodiments of the present utility model, the gas chamber housing may include a gas chamber bottom layer 1, a gas chamber base body 3, and a gas chamber top layer 4; wherein, the gas chamber base body 3, the gas chamber top layer 4, and the gas chamber bottom layer 1 may be glass sheets or silicon wafers respectively.

[0058] More specifically, when the gas chamber base body 3, the gas chamber top layer 4, and the gas chamber bottom layer 1 constituting the gas chamber housing are respectively glass sheets or silicon wafers with regular shapes determined according to the size of the gas chamber housing, and the atomic gas chamber mentioned in this application can be a chip-type atomic gas chamber with a regular shape obtained by encapsulation using a microelectromechanical systems (MEMS) process, the appearance of the atomic gas chamber structure can be a cuboid or a cube at this time. If the atomic gas chamber structure is a cuboid or a cube, each of its six faces can be a silicon wafer or a glass sheet respectively. As Figure 1 shown in the gas chamber structure, the gas chamber bottom layer 1 and the gas chamber top layer 4 are silicon wafers, and the gas chamber base body 3 is a glass sheet.

[0059] Bonding the gas chamber base body 3, the gas chamber top layer 4, and the gas chamber bottom layer 1 in sequence in a vacuum environment can obtain the atomic gas chamber structure as Figure 1 shown. For example, the gas chamber housing can be formed by anodic bonding or atomic bonding, etc. The present utility model does not specifically limit the bonding method. In addition, the atomic gas chamber structure can also be formed by a vacuum pumping method. For example, a glass tube 41 is spliced with the gas chamber top layer 4, and using the thermoplasticity of the glass, the glass tube 41 is sealed during the vacuum pumping process of the atomic gas chamber to form the atomic gas chamber structure as Figure 2 shown.

[0060] Furthermore, the preparation materials of the glass sheets mentioned in the present utility model include any one of borosilicate glass, molybdenum group glass, tungsten group glass, quartz glass, and aluminosilicate glass; and the silicon wafers mentioned in the present utility model are all made of insulating silicon.

[0061] The above-mentioned glass sheet or silicon sheet in the air chamber housing is only an example. The air chamber housing can be made of insulating materials, and the present invention is not limited thereto.

[0062] As an example, the thicknesses of the air chamber bottom layer 1, the air chamber matrix 3 and the air chamber top layer 4 in the air chamber shell may be different or the same, and the utility model does not specifically limit it.

[0063] In order to more briefly describe the distribution of the first through-electrode pair 12 and the heating structure body 2 inside the atomic gas chamber, the following description will be given by taking the gas chamber bottom layer 1 and the gas chamber top layer 4 as silicon wafers and the gas chamber substrate 3 as a glass sheet with a regular shape gas chamber structure as an example.

[0064] In some embodiments of the present invention, the longitudinal section of the through-electrode 121 and the through-electrode 122 (ie, the first through-electrode pair 12 ) may be dumbbell-shaped or polygonal, and the cross-section may be circular or polygonal.

[0065] More specifically, the longitudinal section of the through-electrode in the present application refers to a plane obtained by cutting the through-electrode along the through-direction of the through-electrode, and the transverse section refers to a plane obtained by cutting the through-electrode along a direction perpendicular to the through-direction of the through-electrode. Figure 3 Several longitudinal cross-sectional shapes of the first through-electrode pair 12 are shown. Figure 3 The longitudinal cross-section of the through-electrode 121 and the through-electrode 122 in (a) is a rectangle. Figure 3 The longitudinal cross-section of the through-electrode 121 and the through-electrode 122 in (b) is dumbbell-shaped. Figure 3 The longitudinal cross-section of the through-electrode 121 and the through-electrode 122 in (c) is a cone (or trapezoid). The cross-section of the through-electrode 121 and the through-electrode 122 may be circular (eg, circular or elliptical) or polygonal (including triangular or quadrilateral).

[0066] As an example, the longitudinal sections and cross-sections of the two through-electrodes in the first through-electrode pair 12 may be different or the same. For example, the longitudinal section of the through-electrode 121 is a dumbbell shape, and the longitudinal section of the through-electrode 122 may be a trapezoid; the cross-section of the through-electrode 121 is a circle, and the cross-section of the through-electrode 122 may be a triangle.

[0067] In some embodiments of the present invention, the maximum width of the longitudinal section of the two through-electrodes in the first through-electrode pair 12 may be 0.005 mm-2 mm.

[0068] The maximum width of the longitudinal section refers to the maximum width of the longitudinal section perpendicular to the direction of penetration of the electrode. Assuming that the maximum width of the longitudinal section is 2 mm, Figure 3 As shown,Figure 3 If the longitudinal section of the through electrode in (a) is rectangular, the width of the longitudinal section of the through electrode is 2 mm; as Figure 3 If the longitudinal section of the through electrode in (b) is dumbbell-shaped, the width of the through electrode that is coplanar with the inner and outer surfaces of the bottom layer 1 of the gas chamber is 2 mm; as Figure 3 If the longitudinal section of the through electrode in (c) is trapezoidal, the lower surface of the trapezoid is 2 mm.

[0069] Furthermore, the first pair of through electrodes 12 can be through electrodes formed by metal wires or metal rods, and the preparation materials of the metal wires and metal rods include one or more of tungsten, molybdenum, nickel chromium, nickel, rhenium, gold, and copper; it can also be a through electrode formed by metal paste, for example, using silver paste or copper paste to fill the pre-set through holes on the gas chamber housing to form through electrodes (the pre-set through holes can be obtained by milling through holes or drilling, etc.); it can also be a through electrode prepared by semiconductor evaporation seed layer combined with electroplating, such as a metal through electrode or a conductive silicon through electrode formed by one or more of copper, tungsten, and molybdenum in a through silicon vias (TSV) or through glass vias (TGV) substrate.

[0070] As an example, the present application uses the through silicon vias and through glass vias technologies to form through electrodes on the gas chamber housing, so that the gas chamber housing forms a vacuum chamber with good airtightness, and multiple electrodes are introduced from the outside of the vacuum device into the vacuum.

[0071] The shapes of the cross-section and longitudinal section of the through electrodes mentioned above and the preparation materials of the through electrodes are only examples, and the present invention is not limited thereto, and the width of the longitudinal section can be set according to the required current size, and the present invention does not specifically limit it.

[0072] As an example, the two through electrodes in the first pair of through electrodes 12 can be arranged in the same flat plate of the gas chamber housing, or can be arranged in different flat plates of the gas chamber housing (the flat plates of the gas chamber housing refer to one of the four faces of the bottom layer 1 of the gas chamber, the top layer 4 of the gas chamber, or the base body 3 of the gas chamber). For example, the through electrode 121 and the through electrode 122 in the first pair of through electrodes 12 can both be arranged in the bottom layer 1 of the gas chamber, or the through electrode 121 is arranged in the bottom layer 1 of the gas chamber, and the through electrode 122 is arranged in any flat plate of the base body 3 of the gas chamber. The present invention does not specifically limit the flat plates penetrated by the two through electrodes in the first pair of through electrodes 12, that is, the present invention does not specifically limit the position of the first pair of through electrodes 12 in the gas chamber housing.

[0073] The flat plate including the gas chamber housing with the through electrodes can be a through-silicon via substrate (TSV) including through electrodes or a through-glass via substrate (TGV) including through electrodes.

[0074] If the through electrodes in the first pair of through electrodes 12 are arranged on different flat plates of the gas chamber housing, the heating structure main body 2 also needs to be arranged across the plane. For example, if the through electrode 121 in the first pair of through electrodes 12 is arranged on the top layer 4 of the gas chamber, and the through electrode 122 is arranged on the bottom layer 1 of the gas chamber, one end of the heating structure main body 2 needs to be connected to the through electrode 121, and the other end needs to be connected to the through electrode 122, that is, the heating structure main body 2 needs to be arranged across the plane.

[0075] In some embodiments of the present utility model, since the heating structure main body 2 is placed inside the gas chamber housing, the heating structure main body 2 can be in contact with the inner surface of the gas chamber housing, or at least part of the heating structure main body 2 is suspended inside the gas chamber housing to form a heat dissipation gap; wherein, the heating structure main body 2 includes a heating metal wire 21, a heating metal film 22 or an indium tin oxide film.

[0076] To simplify the structural arrangement inside the gas chamber housing, in the following embodiments, the arrangement of the heating structure main body 2 across the plane will not be elaborated. Taking the through electrode 12 and the heating structure main body 2 arranged on the same flat plate of the gas chamber housing as an example, the structure, shape, and position of the heating structure main body 2 in the atomic gas chamber will be described.

[0077] In some embodiments of the present utility model, at least part of the heating metal film 22 or the indium tin oxide film can be suspended through the grooves provided on the inner surface of the gas chamber housing to form a heat dissipation gap; or, the heating metal wire 21 can also be bowed in a direction away from the inner surface of the gas chamber housing corresponding to the first pair of through electrodes 12 to form a heat dissipation gap between the heating metal wire 21 and the flat plate where the first pair of through electrodes 12 is located.

[0078] More specifically, the heating structure main body 2 includes a heating metal wire 21 fixed by means such as welding or wire bonding, a heating metal film 22 prepared by common semiconductor processes such as deposition, sputtering, or electroplating, and a conductive glass with an indium tin oxide film (i.e., ITO film) attached to its surface prepared by means such as deposition, sputtering, or electroplating. The heating metal wire 21, the heating metal film 22, and the conductive glass can be laid on the inner surface of the flat plate where the first pair of through electrodes 12 is located (that is, the heating structure main body 2 is arranged in contact with the inner surface of the flat plate where the first pair of through electrodes 12 is located).

[0079] Moreover, the heating structure main body 2 can also be at least partially suspended to form a heat dissipation gap between the heating structure main body 2 and the inner surface of the air chamber housing. Considering that in this application, the heating structure main body 2 is connected to the first through electrode pair 12 and is located on the same flat plate of the air chamber housing, at least a part of the heating structure main body 2 needs to be suspended above the inner surface of the flat plate of the air chamber housing between the first through electrode pairs 12. For example, when the heating wire 21 is suspended above the inner surface of the flat plate of the air chamber housing where the first through electrode pair 12 is located, at this time, both ends of the heating wire 21 are connected to the through electrode 121 and the through electrode 122 (or both ends of the heating wire 21 are respectively connected to the first through electrode pair 12 through the pins 13), and the heating wire 21 can be arched in a direction away from the inner surface of the flat plate of the air chamber housing where the first through electrode pair 12 is located (that is, the heating wire 21 can be arched in a direction away from the inner surface of the air chamber housing where the first through electrode pair 12 is located to form a heat dissipation gap between the heating structure main body 2 and the inner surface of the air chamber bottom layer 1), as Figure 4 and Figure 5 shown; when the heating metal film 22 and the conductive glass are suspended above the inner surface of the flat plate of the air chamber housing where the first through electrode pair 12 is located, it is more difficult to process the heating structure main body 2 itself. Therefore, in this application, grooves can be provided on the inner surface of the flat plate of the air chamber housing where the first through electrode pair 12 is located, and by arranging at least a part of the heating metal film 22 and the conductive glass above the grooves of the flat plate of the air chamber housing where the first through electrode pair 12 is located, part or all of the heating metal film 22 and the conductive glass can be suspended, as Figure 6 shown.

[0080] As an example, the length of the heating wire 21 is between 0.1 mm and 1000 mm, and the ratio of the laying area of the heating metal film 22 and the conductive glass to the area of the inner surface of the air chamber housing is between 0 and 90%. For example, Figure 6 if the heating metal film 22 or the conductive glass is laid above the air chamber bottom layer 1, the ratio of the working area of the heating metal film 22 or the conductive glass to the area of the inner surface of the air chamber housing should be 90% or less; or,

[0081] in this application, the working length of the heating wire 21 can also be limited to be between 0.1 mm and 1000 mm, that is, the length of the heating wire between the first through electrode pairs 12 is between 0.1 mm and 1000 mm; or the ratio of the working area of the heating metal film 22 and the conductive glass to the area of the inner surface of the air chamber housing can also be limited to be between 0 and 90%, where the working area refers to the area of the heating structure main body where the heating metal film 22 or the conductive glass can generate heat when the power supply 5 applies a driving voltage through the first through electrode pair 12.

[0082] Furthermore, as Figure 4 and Figure 5As shown, the heating wire 21 is linear or zigzag, and is designed to be bent to increase the heating area of the heating wire 21, thereby improving the heating effect. The shape of the heating wire 21 can also be other shapes (such as spiral), and the present utility model does not specifically limit this. In addition, to avoid poor contact due to a small contact area during metal welding or wire bonding, the present application can consider connecting the heating wire 21 to the first through electrode pair 12 through the pin 13, that is, leading out the through electrode through the pin 13 and connecting the heating wire 21 to the pin, so as to fixedly connect the heating wire to the first through electrode pair 12.

[0083] In some embodiments of the present utility model, such as Figure 7 and Figure 8 shown, the heating wire 21 laid on the flat plate of the gas chamber housing may include a parallel structure with the current input direction opposite to the current output direction, so as to weaken the magnetic field generated by the current through the reverse current, thereby reducing the magnetism brought by the heating wire 21. As Figure 7 shown, the heating wire 21 can be disposed on the inner surface of the gas chamber bottom layer 1 in the atomic gas chamber. Figure 8 For combining Figure 7 the working principle diagram of the heating structure main body shown in the top view of the gas chamber bottom layer 1 in, where the power supply 5 can apply a driving voltage to the heating structure main body 2 through the first through electrode pair 12, so that the heating structure main body 2 generates heat and diffuses in the gas chamber to perform internal heating to increase the internal temperature of the gas chamber. If the through electrode 121 is connected to the positive pole of the power supply 5 and the through electrode 122 is connected to the negative pole of the power supply 5, the current flows in from the through 121, flows through the heating wire 21 on the inner surface of the gas chamber bottom layer 1 and then flows out from the through electrode 122, so that the heating wire 21 generates Joule heat (the Joule heat generated by the heating wire 21 will diffuse into the atomic gas chamber space for heating), and the parallel and reverse currents will cancel or weaken the magnetic field generated by the current flowing through the heating wire 21.

[0084] As an example, such as Figure 1 and Figure 6 shown, the heating metal film 22 and the conductive glass can be directly connected to the first through electrode pair 12, for example, by welding; as Figure 1 and Figure 9 shown, the heating metal film 22 can be Figure 9 shown as a sheet-like thin film, and as Figure 1 shown, the heating metal film 22 can also include a heating thin film laid deep into the gas chamber to ensure uniform heating inside the entire gas chamber. The thickness of the heating metal film 22 can be 0.00001 mm - 2 mm.

[0085] In addition, the preparation materials of the heating wire 21 and the heating metal film 22 include at least one of the following metal materials: gold, nickel, copper, chromium, tungsten, platinum, molybdenum, silver, iridium, rhenium, iron, cobalt, and aluminum.

[0086] In some embodiments of the present utility model, the atomic gas cell structure of the present application includes at least one set of heating structure bodies 2 and at least one pair of through electrodes 12, that is, the atomic gas cell can be provided with one or more sets of corresponding heating structure bodies 2 and through electrodes 12 to improve the uniformity of heating the gas cell. As Figure 10 shown, two heating structure bodies are provided in the atomic gas cell, namely the heating structure body 2' and the heating structure body 2". Among them, the heating structure body 2' is arranged on the inner surface of the bottom layer 1 of the gas cell, and the heating structure body 2" is arranged on the inner surface of the top layer 4 of the gas cell. And the heating structure body 2' is respectively connected to the through electrode 121' and the through electrode 122', and the heating structure body 2" is respectively connected to the through electrode 121" and the through electrode 122" (that is, the heating structure body 2' and the heating structure body 2" are respectively connected to different first pairs of through electrodes 12).

[0087] As an example, if multiple sets of heating structure bodies 2 are arranged inside the atomic gas cell, each heating structure body 2 can be a heating wire 21, a heating metal film 22, or a conductive glass, that is, the types of each heating structure body 2 can be different. For example, the heating structure body 2' can be a heating metal film, and the heating structure body 2" can be a heating wire. And multiple sets of heating structure bodies can be connected to the same first pair of through electrodes 12 by leads or the like (not shown in the figure). In addition, since the internal volume of the atomic gas cell is usually small, the positions of multiple sets of heating structure bodies 2 inside the gas cell can be set arbitrarily. For example, they can be arranged on opposite sides or on adjacent sides.

[0088] In some embodiments of the present utility model, a temperature sensor 6 can be introduced into the gas cell through the second pair of through electrodes 14. It is used in cooperation with the heating structure body 2 to achieve a better temperature control effect. Therefore, the atomic gas cell structure can further include: a temperature sensor 6 located inside the gas cell housing; a second pair of through electrodes 14 connected to the temperature sensor 6. Vacuum welding or other methods can be used to keep the inside of the atomic gas cell still in a vacuum closed state.

[0089] As an example, the setting methods such as the position and preparation materials of the second pair of through electrodes 14 can be the same as those of the first pair of through electrodes 12, which will not be elaborated here. And the materials, shapes, and sizes of the first pair of through electrodes 12 and the second pair of through electrodes 14 inside the gas cell are not required to be exactly the same.

[0090] In some embodiments of the present utility model, as Figure 11As shown, the temperature sensor 6 is a thermal resistance type sensor 6' or a thermocouple type sensor 6", and can be in a linear shape. As Figure 11 shown in (a) of , the thermal resistance type sensor 6' is a section of resistance wire connecting the second pair of through electrodes 14. The through electrodes 141 and 142 in the second pair of through electrodes 14 can be respectively connected to both ends of a resistance box, and the resistance value of the thermal resistance type sensor 6' can be measured in real time by using the resistance box, so as to obtain the temperature value inside the atomic gas cell based on the relationship between resistance and temperature; as Figure 11 shown in (b) of , the thermocouple type sensor 6" is a sensor that connects one end of two different metal materials and uses the thermoelectric effect to measure temperature. A voltmeter can be connected to the second pair of through electrodes 14. Due to the thermoelectric effect, a potential difference will be generated at the unconnected ends of the two different metal materials based on the temperature difference. The voltage difference between the two ends of the thermocouple type sensor is measured by using the voltmeter, and the temperature difference between the two ends of the thermocouple type sensor 6" can be obtained according to the linear relationship of the thermoelectric effect, so as to determine the temperature value inside the atomic gas cell.

[0091] For example, as Figure 12 shown, the temperature sensor 6 and the heating structure main body 2 are arranged on the same flat plate of the gas cell housing. The power supply 5 provides a driving voltage for the heating structure main body 2 through the first pair of through electrodes 12, so that the heating structure main body generates heat energy, thereby affecting the temperature of the metal wire in the thermocouple type sensor 6". Moreover, the power supply 5 has the measurement function of a voltmeter. By connecting two through electrodes in the second through electrode 14, the voltage difference between the two ends of the sensor connecting the through electrodes 141 and 142 can be measured by using the thermoelectric effect, so as to measure the internal temperature of the atomic gas cell.

[0092] As an example, in the present application, the positional relationship between the temperature sensor 6 and the heating structure main body 2 and the shape of the temperature sensor 6 are not specifically limited, and can be adjusted according to actual situations.

[0093] Furthermore, the preparation material of the temperature sensor 6 can be the same as the preparation materials of the heating metal wire 21 and the heating metal film 22, that is, it includes at least one of the following metal materials: gold, nickel, copper, chromium, tungsten, platinum, molybdenum, silver, iridium, rhenium, iron, cobalt, and aluminum.

[0094] The preparation materials of the heating structure main body 2 and the temperature sensor 6 mentioned above are only examples, and the present invention is not limited thereto, and the materials of the heating structure main body and the sensor in the same atomic gas cell can be the same or different.

[0095] In some embodiments of the present invention, the heating metal wire 21 can be considered as the temperature sensor 6, that is, the heating metal wire 21 can also be used as a temperature measuring device while heating. As Figure 8As shown, the power source 5 (and the power source 5 has the function of measuring current at this time) can be used to apply a driving voltage to the heating wire 21 through the first through-electrode pair 12, so that the heating wire 21 generates heat energy, and the value of the current flowing through the heating wire 21 is measured at the same time, so that the resistance value of the heating wire 21 is calculated based on the voltage-current relationship, and the temperature value inside the gas chamber is calculated based on the resistance-temperature relationship. That is, in this embodiment, only one heating wire 21 structure can realize the two functions of heating and temperature measurement at the same time. However, considering that the heating wire 21 needs to generate Joule heat to heat the atomic gas chamber, the corresponding relationship between its temperature and resistance may not be accurate, so the temperature measurement effect of using the heating structure body 2 as the temperature sensor 6 may not be ideal.

[0096] In some embodiments of the present invention, Figure 9 As shown, the atomic gas chamber structure also includes:

[0097] The inert layer 23 can be formed on the heating structure body 2 and the temperature sensor 6 by magnetron sputtering or deposition, etc., to prevent the atomic gas from contacting the heating structure body 2 or undergoing physical adsorption and chemical reaction, thereby avoiding the loss of atomic gas or damage to the heating structure body 2.

[0098] Furthermore, the thickness of the inert layer 23 may be 0.01 μm-10 μm, and since the inert layer 23 is relatively thin, even if the material of the inert layer 23 is not a heat-conducting material, the heat generated by the heating structure body 2 can be diffused into the atomic gas chamber. The material of the inert layer 23 includes at least one of the following materials: silicon oxide, silicon nitride, aluminum oxide, titanium oxide, hafnium oxide, aluminum nitride, yttrium oxide or boron nitride.

[0099] The materials for preparing the inert layer 23 mentioned above are only examples, and the present invention is not limited thereto.

[0100] In some embodiments of the present invention, Figure 13 As shown, the atomic gas chamber structure also includes:

[0101] The second chamber includes an alkali metal atom release device 7, and the second chamber is connected to the first chamber through a gas channel 31 arranged on the gas chamber housing. The first chamber refers to the atomic gas chamber structure described in any of the above embodiments.

[0102] More specifically, the alkali atoms filled in the alkali metal atom release device 7 in the atomic gas chamber include any one of rubidium, cesium, helium, mercury, barium, strontium and hydrogen. The gas channel 31 can be a through hole on the gas chamber substrate between the first chamber and the second chamber, so that the atomic gas generated by the alkali metal atom release device 7 can be transferred to the first chamber through the gas channel 31, thereby realizing the function of the atomic gas chamber.

[0103] The present utility model does not limit the shape, aperture diameter, distribution, etc. of the gas passage 31. For example, the gas passage can be a through hole with a relatively large aperture between the first chamber and the second chamber, or can be multiple through holes with relatively small apertures between the first chamber and the second chamber.

[0104] In addition, the positional relationship between the heating structure main body and the alkali metal atom releasing device is not specifically limited in the present utility model either. For example, the alkali metal atom releasing device 7 can be close to the heating structure main body 2 to facilitate the evaporation of alkali metal atoms; or, the alkali metal atom releasing device 7 can also be far away from the heating structure main body 2 to adjust the atomic vapor pressure inside the atomic gas cell.

[0105] The atomic gas cell structure in the present application can also be applied to fields that require an atomic gas cell such as vacuum lasers and modulators. If the atomic gas cell structure proposed in the present application is adopted, it can also include a laser and a photodetector. To ensure the incident and outgoing quality of the laser, a cuboid or cube-shaped atomic gas cell can be used, such that the laser path formed by the laser and the photodetector is perpendicular or parallel to the flat plate forming the gas cell housing. For example, if the laser is arranged on the top layer 4 of the gas cell and the photodetector is arranged on the bottom layer 1 of the gas cell, then the bottom layer 1 and the top layer 4 of the gas cell are flat planes.

[0106] In some embodiments of the present utility model, the atomic gas cell structure further includes: at least one laser 8, and the laser 8 is located inside or outside the gas cell housing and is used for emitting laser light.

[0107] The atomic gas cell structure can further include: at least one photodetector 9, and the photodetector 9 is located inside or outside the gas cell housing and is used for receiving the laser light emitted by the laser 8. To make the laser path formed by the laser 8 and the corresponding photodetector 9 a straight line with a consistent length, the laser path between the laser and the photodetector is perpendicular or parallel to the surface of the gas cell housing.

[0108] More specifically, as Figure 14 and Figure 15 show a schematic cross-sectional structure diagram of an atomic gas cell in an embodiment of the present application. In Figure 14 the photodetector 9 is located inside the atomic gas cell, and a voltage is applied through the through electrodes 161 and 162, while the laser 8 is located outside the atomic gas cell and above the top layer 4 of the gas cell (the laser is not shown in Figure 14 ). In Figure 15 the photodetector 9 is located inside the atomic gas cell, and a voltage is applied through the through electrodes 161 and 162, and the laser 8 is arranged on the inner surface of the top layer 4 of the gas cell (i.e., located inside the atomic gas cell or inside the gas cell housing), and a voltage is applied through the through electrodes to emit laser light.

[0109] As an example, in the case where the atomic gas cell structure includes a laser, if the heating wire 21 or the heating metal film 22 is used as the main body 2 of the heating structure, since the main body of the heating structure itself is not light-transmissive, the position of the main body 2 of the heating structure in the gas cell needs to avoid the laser incident and exit regions. However, when using a conductive glass as the main body 2 of the heating structure, not only can the internal heating of the gas cell be realized, but also because the conductive glass itself is transparent and does not block the incidence and exit of the laser, the degree of freedom in setting the main body of the heating structure is higher, and its coverage can be wider.

[0110] As Figure 16 shown, the preparation method of the atomic gas cell structure proposed in this application includes steps S01 - S05, specifically as follows:

[0111] Step S01: Obtain glass wafers or silicon wafers of fixed sizes and use them as the bottom layer, the substrate, and the top layer of the gas cell respectively. Among them, the fixed size can be set according to the required size of the atomic gas cell.

[0112] Step S02: Prepare through-holes on the glass wafer or silicon wafer material obtained in step S01 according to the preset positions of the through electrodes (including the first pair of through electrodes and / or the second pair of through electrodes), and tightly fill the through-holes with a conductive material to prepare the corresponding through electrodes.

[0113] Step S03: According to the preset positions of the main body 2 of the heating structure and the temperature sensor 6, the main body 2 of the heating structure and the temperature sensor 6 can be prepared by welding, deposition, etc. on a specific glass wafer or silicon wafer and its specific positions.

[0114] Step S04: Set the alkali metal atom release device 7 according to the alkali metal atom release requirements.

[0115] Step S05: Seal the processed bottom layer 1, the substrate 3, and the top layer 4 of the gas cell to form a vacuum chamber, and make the main body of the heating structure and the temperature sensor located inside the vacuum chamber.

[0116] The beneficial effects of the present utility model are as follows: First, reduce the heating power consumption. The heating structure main body inside is itself within the atomic gas, and there is a glass outer shell separating it from the external environment of the gas chamber. Therefore, most of the heat generated by the heating structure main body can be directly applied to the atomic gas itself, greatly improving the energy utilization rate. Additionally, since the heat source is inside the gas chamber, compared with the traditional external heating scheme, a reverse temperature gradient will be established on the glass outer shell of the gas chamber. For example, if a temperature of 50°C is required to reach a certain atomic number density, in the external heating scheme, due to the external high and internal low temperature gradient on the glass outer shell, the heating structure main body itself needs to be heated to 55°C; while in the internal heating scheme, the heating structure main body only needs to be heated to 50°C, and at this time the temperature on the surface of the outer shell is approximately 45°C. The surface temperature of the outer shell is reduced by about 10°C, which will also greatly reduce the power of heat dissipation from the gas chamber itself to the external environment, further reducing the power consumption of the heating module. Second, reduce the temperature fluctuation. Since the heating structure main body is inside the atomic gas chamber, the overall heat dissipation power and its fluctuation are both greatly reduced, and the influence of the external environment is also significantly reduced. At this time, only by fixing the heating power can a relatively high temperature stability be achieved. If a temperature sensor is also introduced into the gas chamber, the stability can be further improved through the temperature control module, and the accuracy of temperature control will surely be greatly improved. Third, reduce the overall volume of the gas chamber. The internal heating scheme has almost no influence on the size of the gas chamber itself, but it can streamline the structural design of various external coatings and temperature control components, thereby reducing the peripheral size of the sensor part to a level equivalent to that of the gas chamber itself.

[0117] It should be clear that the present utility model is not limited to the specific configurations and processes described above and shown in the figures. For the sake of brevity, the detailed descriptions of known methods are omitted here. In the above embodiments, several specific steps are described and shown as examples. However, the method process of the present utility model is not limited to the specific steps described and shown. Those skilled in the art can make various changes, modifications, and additions, or change the order between the steps after understanding the spirit of the present utility model.

[0118] In the present utility model, the features described and / or illustrated for one embodiment can be used in the same or similar manner in one or more other embodiments, and / or combined with the features of other embodiments or replace the features of other embodiments.

[0119] The above are only the preferred embodiments of the present utility model and are not used to limit the present utility model. For those skilled in the art, various changes and modifications can be made to the embodiments of the present utility model. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present utility model shall be included within the protection scope of the present utility model.

Claims

1. An atomic gas chamber structure, characterized in that: The atomic gas cell structure includes: An air chamber housing, used to form a vacuum-enclosed cavity; A heating structural body, wherein the heating structural body is disposed inside the air chamber shell; A first through-electrode pair is connected to the heating structure body and is used for applying a voltage to the heating structure body so that the heating structure body generates Joule heat.

2. The atomic gas chamber structure according to claim 1, characterized in that: The heating structure body includes a heating metal wire, a heating metal film or an indium tin oxide film.

3. The atomic gas chamber structure according to claim 2, characterized in that: A groove is provided on the inner surface of the air chamber housing, and at least part of the heating metal film or the indium tin oxide film is suspended through the groove to form a heat dissipation gap; or The heating wire is bent in a direction away from the inner surface of the air chamber shell corresponding to the first through-electrode pair, so as to form a heat dissipation gap between the heating structure body and the inner surface of the air chamber shell.

4. The atomic gas chamber structure according to claim 2, characterized in that: The heating wire comprises a parallel structure in which the current input direction is opposite to the current output direction, so as to utilize the reverse current to weaken the magnetic field generated by the current; The ratio of the laying area of ​​the heating metal film or the indium tin oxide film to the area of ​​the inner surface of the air chamber shell is less than 90%, and the length of the heating metal wire connected to the first through-electrode pair is 0.1mm-1000mm.

5. The atomic gas chamber structure according to claim 1, characterized in that: The atomic gas chamber structure also includes: a temperature sensor located inside the gas chamber housing, and a second through-electrode pair connected to the temperature sensor; Among them, the temperature sensor is a thermistor sensor or a thermocouple sensor; the thermistor sensor is used to obtain the temperature value inside the air chamber shell by measuring its own resistance value and resistance-temperature relationship, and the thermocouple sensor is used to obtain the temperature value inside the air chamber shell by measuring the voltage difference between its two ends.

6. The atomic gas chamber structure according to claim 5, characterized in that: The atomic gas chamber structure also includes: An inert layer covering the heating structure body and / or the temperature sensor; wherein the inert layer comprises a silicon oxide layer, a silicon nitride layer, an aluminum oxide layer, a titanium oxide layer, a hafnium oxide layer, an aluminum nitride layer, a yttrium oxide layer or a boron nitride layer.

7. The atomic gas chamber structure according to claim 5, characterized in that: The cross-section of the first through-electrode pair and the second through-electrode pair is circular or polygonal, the longitudinal section of the first through-electrode pair and the second through-electrode pair is polygonal or dumbbell-shaped, and the maximum width of the longitudinal section is 0.005 mm-2 mm.

8. The atomic gas chamber structure according to claim 1, characterized in that: The atomic gas chamber structure also includes: The second chamber includes an alkali metal atom releasing device, and the second chamber is connected to the first chamber through a gas channel arranged on the gas chamber shell, wherein the first chamber is a chamber formed by the atomic gas chamber structure as described in any one of claims 1-7.

9. The atomic gas chamber structure according to claim 1, characterized in that: The atomic gas chamber structure also includes: A laser is located inside or outside the air chamber housing and is used for emitting laser light.

10. The atomic gas chamber structure according to claim 9, characterized in that: The atomic gas chamber structure also includes: A photodetector is located inside or outside the air chamber housing and is used to receive the laser light emitted by the laser. The laser light path between the laser and the photodetector is perpendicular or parallel to the surface of the air chamber housing.

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