Laser

Abstract

The embodiment of the utility model provides a laser, and relates to the technical field of laser packaging. The laser comprises a tube shell which comprises a bottom plate and an annular side wall, the annular side wall is located on one side of the bottom plate, and an opening is formed in the side, away from the bottom plate, of the annular side wall; the light-transmitting sealing part is located on the side, away from the bottom plate, of the annular side wall and covers the opening; the improved solder is located between the annular side wall and the light-transmitting sealing component and used for connecting the annular side wall and the light-transmitting sealing component; the melting point of the improved solder is larger than or equal to 210 DEG C, and / or the melting point of the improved solder is smaller than or equal to 240 DEG C. Therefore, according to the laser, the annular side wall and the light-transmitting sealing part are connected through the improved welding flux, so that sealing of the tube shell is achieved, compared with traditional gold-tin welding flux, the improved welding flux is low in melting point, the sealing welding temperature of the laser is reduced, heat input is reduced, and therefore the influence of high temperature on the performance of the light-emitting chip is reduced; and the welding reliability defect caused by thermal stress introduced in the welding process is overcome.

Description

Technical Field

[0001] The embodiments of the present application relate to the technical field of laser packaging, and more specifically, to a laser. Background Art

[0002] With the rapid development of laser technology, laser display technology has become the next generation of new display technology. As a display light source, laser has become an extremely important core display device. With the upgrading of display equipment demand, the miniaturization trend of lasers is obvious. Traditional laser sealing technology is mainly parallel sealing and gold-tin welding.

[0003] Parallel sealing technology is usually used in large-size sealing scenarios, which produces large welding stress and easily causes the sealing glass to break. Gold-tin welding technology is mostly used for airtight packaging of smaller-sized lasers. A major disadvantage of this packaging technology is that the entire module needs to be heated during the welding process, and the peak temperature is around 350°C. The light-emitting chip packaged inside is easily affected by high temperature, resulting in reduced performance or even damage. Utility Model Content

[0004] An exemplary embodiment of the present application provides a laser that utilizes an improved solder with a lower melting point to connect the annular side wall and the light-transmitting sealing component, thereby lowering the sealing welding temperature of the laser and reducing heat input, thereby reducing the impact of high temperature on the performance of the light-emitting chip and improving the welding reliability defects caused by thermal stress introduced during the welding process.

[0005] This application provides the following technical solutions:

[0006] The present application provides a laser, including:

[0007] The tube shell comprises a bottom plate and an annular side wall, wherein the annular side wall is located on one side of the bottom plate, and the side of the annular side wall facing away from the bottom plate has an opening;

[0008] A light-transmitting sealing component, located on a side of the annular side wall away from the bottom plate and covering the opening;

[0009] The improved solder is located between the annular side wall and the light-transmitting sealing component, and is used to connect the annular side wall and the light-transmitting sealing component; the melting point of the improved solder is greater than or equal to 210°C, and / or the melting point of the improved solder is less than or equal to 240°C.

[0010] As can be seen from the above technical solutions, the laser provided by this application uses a modified solder to connect the annular sidewall and the light-transmitting sealing component, thereby achieving the sealing of the package. Compared with the traditional gold-tin solder, the modified solder has a lower melting point, reducing the sealing welding temperature of the laser, reducing the heat input, thus reducing the influence of high temperature on the performance of the light-emitting chip and improving the welding reliability defects caused by the thermal stress introduced during the welding process. Description of the Drawings

[0011] In order to more clearly illustrate the embodiments of this application or the implementation manners in the related art, the following will briefly introduce the drawings required for use in the description of the embodiments or the related art. Obviously, the drawings in the following description are some embodiments of this application, and those of ordinary skill in the art can also obtain other drawings based on these drawings.

[0012] Figure 1 Structural diagram of a laser in the related art;

[0013] Figure 2 For Figure 1 Exploded structural diagram of the laser shown;

[0014] Figure 3 Structural diagram of a package in the related art;

[0015] Figure 4 Structural diagram of a laser provided by an embodiment of this application;

[0016] Figure 5 Top view structural diagram of a modified solder provided by an embodiment of this application;

[0017] Figure 6 Top view structural diagram of a laser provided by an embodiment of this application;

[0018] Figure 7 For Figure 6 Enlarged structural diagram at position A in the laser shown;

[0019] Figure 8 Structural diagram of another laser provided by an embodiment of this application;

[0020] Figure 9 For Figure 8 Enlarged structural diagram at position B in the laser shown;

[0021] Figure 10 For Figure 9 Structural diagram after removing the modified solder in;

[0022] Figure 11 Structural diagram of yet another laser provided by an embodiment of this application;

[0023] Figure 12 The enlarged structure diagram at position C in the laser shown Figure 11 ;

[0024] Figure 13 The structure diagram after removing the improved solder in Figure 12 ;

[0025] Figure 14 Another structure diagram of a laser provided by an embodiment of the present application

[0026] Figure 15 The enlarged structure diagram at position D in the laser shown Figure 14 ;

[0027] Figure 16 The structure diagram after removing the improved solder in Figure 15 ;

[0028] Figure 17 Another structure diagram of a laser provided by an embodiment of the present application

[0029] Figure 18 The enlarged structure diagram at position E in the laser shown Figure 17 ;

[0030] Figure 19 The structure diagram after removing the improved solder in Figure 18 ;

[0031] Figure 20 Another structure diagram of a laser provided by an embodiment of the present application

[0032] Figure 21 Another structure diagram of a laser provided by an embodiment of the present application Detailed implementation manners

[0033] To make the purpose and implementation manners of the present application clearer, the following will clearly and completely describe the exemplary implementation manners of the present application with reference to the accompanying drawings in the exemplary embodiments of the present application. Obviously, the described exemplary embodiments are only a part of the embodiments of the present application, rather than all of the embodiments

[0034] It should be noted that the brief description of the terms in the present application is only for the convenience of understanding the subsequent described implementation manners, rather than intending to limit the implementation manners of the present application. Unless otherwise specified, these terms should be understood in their ordinary and common meanings

[0035] The terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover but not exclude inclusion, for example, a product or device comprising a list of components is not necessarily limited to all the components expressly listed but may include other components not expressly listed or inherent to such product or device.

[0036] In related technologies, such as Figure 1-2 As shown, the laser comprises: a mounting substrate 1', a tube shell 2', a light-transmitting sealing component 3', a collimating lens 7', a light-emitting component 6' and a steering component 5'. The tube shell 2' and the light-transmitting component 3' form a closed space, the light-emitting component 6' and the steering component 5' are located in the closed space, the light-emitting component 6' is arranged in a line in the closed space, the steering component 5' is located on the light-emitting side of the light-emitting component 6', and is used to reflect the laser emitted by the light-emitting component 6' to the light-transmitting sealing component 3', the laser passes through the light-transmitting sealing component 3' and is incident on the collimating lens 7', and is collimated by the collimating lens 7' and then emitted.

[0037] The main function of the light-transmitting sealing component 3' is to achieve airtightness of the tube shell. Figure 3 , using gold-tin welding technology, using gold-tin solder 4' to weld the light-transmitting sealing component 3' and the tube shell 2', so as to achieve a high airtightness level of the tube shell 2'. Gold-tin welding technology is suitable for airtight packaging of smaller-sized lasers. A major disadvantage of this packaging technology is that the entire module needs to be heated during the welding process, which places strict requirements on the temperature resistance of the light-emitting chip. The peak temperature of gold-tin welding generally reaches 350°C. The light-emitting chip packaged inside is easily affected by high temperature, resulting in reduced power performance and even damage to the light-emitting chip.

[0038] In order to solve at least part of the above technical problems, the embodiment of the present application provides a laser, which includes: a tube shell, including a bottom plate and an annular side wall, the annular side wall is located on one side of the bottom plate, and the side of the annular side wall away from the bottom plate has an opening; a light-transmitting sealing component is located on the side of the annular side wall away from the bottom plate and covers the opening; a modified solder is located between the annular side wall and the light-transmitting sealing component, and is used to connect the annular side wall and the light-transmitting sealing component; the melting point of the modified solder is greater than or equal to 210°C, and / or the melting point of the modified solder is less than or equal to 240°C. Thus, the laser uses the modified solder to connect the annular side wall and the light-transmitting sealing component, thereby realizing the sealing of the tube shell. Compared with the traditional gold-tin solder, the melting point of the modified solder is lower, which reduces the sealing welding temperature of the laser, reduces the heat input, thereby reducing the influence of high temperature on the performance of the light-emitting chip, and improves the welding reliability defects caused by the thermal stress introduced during the welding process.

[0039] A laser provided in an embodiment of the present application is exemplarily described below in conjunction with the accompanying drawings.

[0040] In some embodiments,Figure 4 As shown, the laser comprises: a tube shell 2, a light-transmitting sealing component 3 and an improved solder 4.

[0041] The tube shell 2 includes a bottom plate 21 and an annular side wall 22, the annular side wall 22 is located on one side of the bottom plate 21, and the two form an enclosed space with a cavity. The side of the annular side wall 22 away from the bottom plate 21 has an opening, and the opening is connected to the cavity. The annular side wall 22 can be made of ceramic material or metal alloy material. The bottom plate 21 includes a patch area for mounting the light-emitting component 6 and the steering component 5. Considering the patch accuracy and heat dissipation effect, the flatness of the bottom plate 21 is required to be high, and materials with good heat dissipation such as oxygen-free copper and diamond can be used. The bottom plate 21 and the annular side wall 22 are sintered to form the overall structure of the tube shell 2. The light-emitting component 6 includes a light-emitting chip 61 and a heat sink 62.

[0042] The light-transmitting sealing component 3 is located on the side of the annular side wall 22 away from the bottom plate 21, that is, located on the top of the annular side wall 22, and the light-transmitting sealing component 3 covers the opening located on the top of the annular side wall 22. The light-transmitting sealing component 3 is made of a light-transmitting material such as glass, quartz or sapphire, which is not limited here.

[0043] The improved solder 4 is located between the annular side wall 22 and the light-transmitting sealing component 3 , and is used to connect the annular side wall 22 and the light-transmitting sealing component 3 , thereby achieving sealing of the tube shell 2 .

[0044] The improved solder 4 has a lower melting point, which is greater than or equal to 210° C. and / or less than or equal to 240° C. Compared with the traditional gold-tin solder, the soldering temperature is reduced by 100° C., which greatly reduces the risk of damage to the light-emitting chip 61 caused by temperature.

[0045] The laser provided in the embodiment of the present application utilizes an improved solder 4 to connect the annular side wall 22 and the light-transmitting sealing component 3, thereby achieving the sealing of the tube shell 2. Compared with the traditional gold-tin solder, the improved solder 4 has a lower melting point, which reduces the sealing welding temperature of the laser and reduces the heat input, thereby reducing the impact of high temperature on the performance of the welding material (i.e., the annular side wall 22 and the light-transmitting sealing component 3) and the light-emitting chip 61, and improves the welding reliability defects caused by the thermal stress introduced during the welding process.

[0046] In some embodiments, the improved solder 4 includes at least one of tin-silver-copper solder (SAC), tin-silver-copper-indium solder, and tin-silver-copper solder doped with rare earth elements.

[0047] Among them, in the tin-silver-copper solder (SAC), the main component is tin, the proportion of silver is greater than or equal to 1.0%, and / or the proportion of silver is less than or equal to 3.0%; the proportion of copper is greater than or equal to 0.3%, and / or the proportion of copper is less than or equal to 0.7%. Exemplarily, the tin-silver-copper solder (SAC) includes SAC305, SAC105 or SAC0307. In SAC305, the proportion of silver is 3.0% and the proportion of copper is 0.5%; in SAC105, the silver content is 1.0% and the copper content is 0.5%; in SAC0307, the proportion of silver is 0.3% and the proportion of copper is 0.7%.

[0048] In the tin-silver-copper solder (SAC), the addition of silver can reduce the cost, but it will also affect the wettability of the solder, the spreading area of the solder on the welding material, and the welding shear force of the low-silver solder will also be reduced. Therefore, for cases with high requirements for welding reliability, the tin-silver-copper solder SAC305 is selected.

[0049] To further improve the oxidation resistance and wetting performance of the modified solder 4, indium (In) elements with different proportions can be added to the tin-silver-copper solder to obtain a tin-silver-copper-indium solder. In the tin-silver-copper-indium solder, the proportion of indium is greater than or equal to 1.0%, and / or the proportion of indium is less than or equal to 3.0%.

[0050] By doping rare earth elements in the tin-silver-copper solder, the fluidity of the solder is increased, the wetting time is reduced, and the structure and welding performance of the solder can be improved. In the modified solder 4, the proportion of rare earth elements is greater than or equal to 0.1%, and / or the proportion of rare earth elements is less than or equal to 0.5%.

[0051] In some embodiments, the tin-silver-copper solder doped with rare earth elements includes a tin-silver-copper-neodymium solder and / or a tin-silver-copper-praseodymium solder.

[0052] Among them, by adding neodymium (Nd) elements to the tin-silver-copper solder, a tin-silver-copper-neodymium solder is obtained. In the tin-silver-copper-neodymium solder, the proportion of neodymium is greater than or equal to 0.1%, and / or the proportion of neodymium is less than or equal to 0.5%. By adding praseodymium (Pr) elements to the tin-silver-copper solder, a tin-silver-copper-praseodymium solder is obtained. In the tin-silver-copper-praseodymium solder, the proportion of praseodymium is greater than or equal to 0.1%, and / or the proportion of praseodymium is less than or equal to 0.5%.

[0053] In other embodiments, other rare earth elements, such as cerium (Ce) or lanthanum (La), can also be added to the tin-silver-copper solder, which is not limited here.

[0054] In some embodiments, the melting point of the modified solder 4 is greater than or equal to 216 °C, and / or the melting point of the modified solder 4 is less than or equal to 219 °C.

[0055] Exemplarily, the melting point of SAC305 is basically at 218°C, and the highest peak temperature is around 230°C - 240°C; by adding rare earth elements, the melting point of the solder can be reduced to control it at 216°C.

[0056] In some embodiments, in order to ensure that the modified solder does not overflow during the soldering process and to ensure the soldering sealing effect, the thickness of the modified solder is less than or equal to 50μm.

[0057] In some embodiments, as Figure 5-6 shown, the light-transmitting sealing component 3 includes a light-transmitting area 31 and a sealing area 32, and the sealing area 32 is arranged around the light-transmitting area 31. The light-transmitting area 31 is located in the middle area of the light-transmitting sealing component 3, and the sealing area 32 is located in the circumferential area of the light-transmitting sealing component 3, that is, the light-transmitting area 31 is located inside and the sealing area 32 is located outside. The light-transmitting area 31 is used to transmit laser; in the direction perpendicular to the plane where the bottom plate 21 is located, the projection of the modified solder 4 is located within the projection of the sealing area 32.

[0058] Among them, when projected in the direction perpendicular to the plane where the bottom plate 21 is located, the modified solder 4 has an annular structure and continuously surrounds the light-transmitting area 31. The projection of the modified solder 4 is located within the projection of the sealing area 32, and the projection of the sealing area 32 at least partially overlaps with the projection of the annular side wall 22. With such a setting, the modified solder 4 is used to connect the shell 2 and the light-transmitting sealing component 3 to seal the opening in all directions of 360 degrees, so as to realize the sealing of the cavity inside the shell 22.

[0059] In this embodiment, the modified solder 4 can be set as a solder sheet and laid between the annular side wall 22 and the light-transmitting sealing component 3. After the solder sheet is heated, it becomes in a molten state. The molten solder fully wets the welding surfaces of the shell 2 and the light-transmitting sealing component 3, and the shell 2 and the light-transmitting sealing component 3 are welded after the solder is solidified.

[0060] In the direction perpendicular to the plane where the bottom plate 21 is located, the projection of the modified solder 4 is located within the projection of the sealing area 32, that is, the width of the modified solder 4 is less than the thickness of the sealing area 32. With such a setting, it is prevented that the molten modified solder 4 overflows the sealing area 32 to form a climbing cover or an internal overflow to form teardrop-shaped solder balls.

[0061] In some embodiments, a metal layer is provided on the side of the sealing area 32 facing the modified solder 4. The molten solder flows on the metal layer, and the metal layer combines with the modified solder 4 to achieve a high airtight level.

[0062] In some embodiments, as Figure 6-7As shown, the sealing area 32 includes a first side 321 and a second side 322. The first side 321 faces away from the light-transmitting area 31, and the second side 322 faces the light-transmitting area 31; the improved solder 4 includes a third side 41 and a fourth side 42. The third side 41 faces the first side 321, and the fourth side 42 faces away from the first side 321. The improved solder 4 is annular. The third side 41 is the outer frame of the annulus, and the fourth side 42 is the inner frame of the annulus. The distance L1 between the first side 321 and the third side 41 is greater than or equal to 0.1 mm, and / or the distance L1 between the first side 321 and the third side 41 is less than or equal to 0.2 mm. The distance L3 between the second side 322 and the fourth side 42 is greater than or equal to 0.2 mm, and / or the distance L3 between the second side 322 and the fourth side 42 is less than or equal to 0.3 mm.

[0063] In the direction from the first side 321 to the second side 322, the distance between the third side 41 and the fourth side 42 is the width L2 of the improved solder 4. The width of the improved solder 4 determines the effective spreading range after the solder melts.

[0064] If the width of the improved solder 4 is too wide, resulting in too small distances between the edges of the improved solder 4 and the edges of the sealing area 32 on both sides thereof (i.e., the distance L1 between the first side 321 and the third side 41 and the distance L3 between the second side 322 and the fourth side 42), the molten solder will overflow from the sealing area 32, and the molten solder will flow to the inside (i.e., the light-transmitting area 31) or the outside of the sealing area 32, forming a cover creep or an internal overflow to form teardrop-shaped solder balls. Therefore, the distance L1 between the first side 321 and the third side 41 is set to be greater than or equal to 0.1 mm, and the distance L3 between the second side 322 and the fourth side 42 is set to be greater than or equal to 0.2 mm.

[0065] If the width of the improved solder 4 is too narrow, resulting in too large distances between the edges of the improved solder 4 and the edges of the sealing area 32 on both sides thereof (i.e., the distance L1 between the first side 321 and the third side 41 and the distance L3 between the second side 322 and the fourth side 42), sealing holes will be formed at the edges or inside the sealed welding area. Therefore, the distance L1 between the first side 321 and the third side 41 is set to be less than or equal to 0.2 mm, and the distance L3 between the second side 322 and the fourth side 42 is set to be less than or equal to 0.3 mm.

[0066] In some embodiments, as Figure 8-9 shown in FIG. 11 or 11-12, the laser further includes: a first sealing structure 8. The first sealing structure 8 is located on the side of the annular side wall 22 facing the light-transmitting sealing member 3, and the first sealing structure 8 is recessed toward the side of the annular side wall 22 away from the light-transmitting sealing member 3 to form a groove structure; the improved solder 4 is filled in the first sealing structure 8 and protrudes from the first sealing structure 8.

[0067] In this embodiment, the welding surface of the annular sidewall 22 (i.e., the surface of the annular sidewall 22 facing the light-transmitting sealing member 3) is improved, and a first sealing structure 8 is formed on the welding surface to increase the welding area between the improved solder 4 and the annular sidewall 22, thereby improving the high airtightness and reliability of the shell 2.

[0068] Among them, generally, the texture of the improved solder 4 is relatively soft, and it can be easily attached to the first sealing structure 8. After the improved solder 4 is heated, it is in a molten state. The molten solder fills the first sealing structure 8 and overflows. The overflowed solder contacts the light-transmitting sealing member 3, and after the solder solidifies, the welding between the annular sidewall 22 and the light-transmitting sealing member 3 is achieved.

[0069] In the embodiment of the present application, the welding surface of the light-transmitting sealing member 3 (i.e., the surface of the light-transmitting sealing member 3 facing the annular shell 2) is not limited. It can be set as a flat surface or can include a convex structure matching the first sealing structure 8.

[0070] In some embodiments, as Figure 8-10 shown in any figure, the shape of the first sealing structure 8 includes at least one of a triangle, a rectangle, a trapezoid, and a polygon.

[0071] Among them, the first sealing structure 8 is a groove provided in the annular sidewall 22, and the shape of the groove is at least one of an angular shape, a rectangle, a trapezoid, and a polygon. The shape of each first sealing structure 8 can be the same or different, and is not limited herein.

[0072] Exemplarily, as Figure 8-10 shown in any figure, the shape of the first sealing structure 8 is a rectangle.

[0073] In some embodiments, as Figure 10 shown, in the direction perpendicular to the plane of the bottom plate 21 (i.e., the Z direction), the depth H of the first sealing structure 8 is greater than or equal to 50 μm, and / or the depth H of the first sealing structure 8 is less than or equal to 100 μm.

[0074] Among them, the first sealing structure 8 is a groove provided in the annular sidewall 22. The depth H of the first sealing structure 8 is positively correlated with its side area. The larger the depth H of the first sealing structure 8, the larger the side area of the first sealing structure 8; the side area of the first sealing structure 8 is the increased welding area of the annular sidewall 22. Therefore, setting the depth H of the first sealing structure 8 to be greater than or equal to 50 μm ensures that the annular sidewall 22 has a sufficiently large welding area, which is beneficial to ensuring welding airtightness.

[0075] Meanwhile, the greater the depth H of the first sealing structure 8, the more modified solder 4 is required, resulting in increased costs. Therefore, on the premise of meeting the welding airtightness, the depth H of the first sealing structure 8 is controlled to be less than or equal to 100 μm to effectively control costs.

[0076] In some embodiments, as Figure 10 shown, in the thickness direction of the annular side wall 22 (i.e., the X direction), or along the direction from the fourth side 42 to the third side 41, the width W of the first sealing structure 8 is greater than or equal to 100 μm, and / or the width W of the first sealing structure 8 is less than or equal to 300 μm.

[0077] Among them, the first sealing structure 8 is a groove provided in the annular side wall 22. The width W of the first sealing structure 8 is positively correlated with its surface area. The greater the width W of the first sealing structure 8, the larger the surface area of the first sealing structure 8, and the larger the contact area between a single first sealing structure 8 and the modified solder 4, and the corresponding welding force is greater, which is beneficial to improving the sealing performance. Therefore, it is necessary to control the width W of a single first sealing structure 8 to be greater than or equal to 100 μm.

[0078] The annular side wall 22 has a certain supporting effect on the light-transmitting sealing member 3 and has certain strength requirements. Since the thickness of the annular side wall 22 is limited, if the width W of the first sealing structure 8 is too wide, the remaining thickness of the annular side wall 22 will be thinner, and the corresponding strength will be weakened. Therefore, it is necessary to control the width of the first sealing structure 8 to be less than or equal to 300 μm to ensure that the annular side wall 22 meets the strength requirements. At the same time, the greater the width W of the first sealing structure 8, the more modified solder 4 is required. Controlling the width W of the first sealing structure 8 to be less than or equal to 300 μm is also beneficial to cost control.

[0079] It should be noted that in the laser provided in the embodiment of the present application, the width and depth of each first sealing structure 8 may be equal or unequal, which is not limited herein.

[0080] In some embodiments, as Figure 11-12 shown, the shape of the first sealing structure 8 includes an arc shape.

[0081] Among them, the first sealing structure 8 is a groove provided in the annular side wall 22, and the groove shape is an arc shape. The curvature radius of each arc shape may be equal or unequal, which is not limited herein.

[0082] In some embodiments, as Figure 13 shown, the curvature radius of the first sealing structure 8 is greater than or equal to 0.05 mm, and / or the curvature radius of the first sealing structure 8 is less than or equal to 0.09 mm.

[0083] Among them, the radius of curvature of the 8-shaped first sealing structure is positively correlated with its surface area. The larger the radius of curvature of the first sealing structure 8, the larger the surface area of the first sealing structure 8, so the contact area between a single first sealing structure 8 and the improved solder 4 is larger, and the corresponding welding force is larger, which is beneficial to improving the sealing performance. Therefore, it is necessary to control the radius of curvature of a single first sealing structure 8 to be greater than or equal to 0.05 mm.

[0084] For the width radius of curvature of the first sealing structure 8, more improved solder 4 is required. Controlling the radius of curvature of the first sealing structure 8 to be less than or equal to 0.09 mm is also beneficial to cost control.

[0085] In some embodiments, as Figure 8-13 shown in any figure, the number of the first sealing structures 8 is greater than or equal to 2, and / or the number of the first sealing structures 8 is less than or equal to 5.

[0086] Among them, the first sealing structures 8 are arranged along the thickness direction (i.e., the X direction) of the annular side wall 22. As the number of the first sealing structures 8 increases, the welding area of the annular side wall 22 is increased; however, the thickness of the annular side wall 22 is limited. If the number of the first sealing structures 8 is too large, the remaining structure of the annular side wall 22 is less, and the remaining structure cannot meet the strength requirements. Therefore, it is also necessary to control the number of the first sealing structures 8 to be less than or equal to 5.

[0087] Exemplarily, as Figure 8-10 shown, the shape of the first sealing structure 8 is rectangular, and the number of the first sealing structures 8 is 3.

[0088] Exemplarily, as Figure 11-13 shown, the shape of the first sealing structure 8 is arc-shaped, and the number of the first sealing structures 8 is 3.

[0089] In some embodiments, as Figure 10 shown in or 13, the spacing distance L4 between two adjacent first sealing structures 8 is greater than or equal to 0.15 mm, and / or the spacing distance L4 between two adjacent first sealing structures 8 is less than or equal to 0.30 mm.

[0090] Among them, the distance between the adjacent and mutually approaching edges of two adjacent first sealing structures 8 is the interval distance L4 therebetween. On the premise that the thickness of the annular side wall 22 is constant, the smaller the interval distance L4 between two adjacent first sealing structures 8, the more first sealing structures 8 can be arranged on the annular side wall 22, the greater the width W of a single first sealing structure 8, and the greater the contact area between the annular side wall 22 and the improved solder 4, which is beneficial to improving the welding performance and sealing stability, but the strength of the annular side wall 22 is weakened. Therefore, it is necessary to control the interval distance L4 between two adjacent first sealing structures 8 to be greater than or equal to 0.15 mm to meet the strength requirement of the annular side wall 22; and it is also necessary to control the interval distance L4 between two adjacent first sealing structures 8 to be less than or equal to 0.30 mm to increase the contact area between the annular side wall 22 and the improved solder 4, thereby improving the welding performance and sealing stability.

[0091] In some embodiments, as Figure 14-19 shown in any of the figures, the laser further includes: a second sealing structure 9, the second sealing structure 9 is located on the side of the light-transmitting sealing member 3 facing the annular side wall 22, and the second sealing structure 9 protrudes towards the side of the light-transmitting sealing member 3 facing the annular side wall 22; the second sealing structure 9 is fitted with the first sealing structure 8.

[0092] Among them, the first sealing structure 8 is a groove structure in which the annular side wall 22 is recessed inward, the second sealing structure 9 is a protrusion structure in which the light-transmitting sealing member 3 protrudes outward, the first sealing structure 8 and the second sealing structure 9 are fitted with each other, and the improved solder 4 is filled in the gap therebetween. With such a setting, not only the welding area of the annular side wall 22 is increased, but also the welding area of the light-transmitting sealing member 3 is increased, and the airtightness and stability of the shell 2 are improved by expanding the welding area, achieving a high airtightness level.

[0093] Among them, the width of the second sealing structure 9 matches the width W of the first sealing structure 8, and the thickness of the second sealing structure 9 matches the depth H of the first sealing structure 8. In order to reserve a filling space for the improved solder 4, a certain gap needs to be reserved between the second sealing structures 9, that is, the width of the second sealing structure 9 is less than the width W of the first sealing structure 8, and the thickness of the second sealing structure 9 is less than the depth of the first sealing structure.

[0094] Similarly, the interval distance L4 between two adjacent first sealing structures 8 is less than the interval distance between the corresponding two adjacent second sealing structures 9.

[0095] In some embodiments, as Figure 20-21 shown, the laser further includes a mounting substrate 1, a light-emitting component 6, and a steering component 5.

[0096] Among them, on the one hand, the mounting substrate 1 can be welded to the package 2, and on the other hand, a printed circuit board can be printed inside the mounting substrate 1 to achieve the circuit interconnection function with the package 2. The package 2 and the mounting substrate 1 can be welded and fixed by using a tin-silver-copper alloy. The welding method is not limited to reflow soldering, and the welding and fixing can also be achieved by using high-temperature pressure-sintered silver paste (or copper paste). The mounting substrate 1 is prepared from metal materials such as oxygen-free copper and electrolytic copper.

[0097] The inner sides of the annular side walls 22 are all stepped structures. The stepped structures 23 need to be plated with a metal film. The stepped structures 23 can achieve circuit conduction to the bottom plate 21 and finally achieve interconnection with the mounting substrate 1. The circular holes in the middle part of the stepped structures 23 can be used as identification areas, and a global coordinate system can be constructed through the circular holes on both sides. The middle rectangular part is a circuit isolation area, so that the electrical connections on both sides are not related to each other. An identification area can be set on one side of the annular side wall 22 for direction identification when it is used as the bottom plate 21.

[0098] The laser emitted by the light-emitting component 6 needs to pass through the turning component 5, and the turning component 5 reflects the optical path by 90° for light output. The turning component 5 is prepared from materials such as borosilicate glass, quartz, and silicon. An antireflection film is plated on the emitting surface of the turning component 5 to improve the reflectivity. Both the turning component 5 and the light-emitting component 6 can be fixed to the patch area at the bottom of the package 2 by using nano metal paste for low-temperature sintering. After sintering, the thermal conductivity and mechanical reliability of the light-emitting component 6 at high temperatures are greatly improved.

[0099] In some embodiments, the laser further includes: a collimating lens, which is located on the side of the light-transmitting sealing component 3 away from the side wall, and is used to collimate the laser emitted from the light-transmitting sealing component 3 to reduce the divergence angle of the laser beam.

[0100] In this embodiment, the surface type of the collimating lens includes but is not limited to spherical, aspherical, and free-form surfaces, and also includes surface types with a Fresnel structure or a diffraction unit structure, which are not limited here. The collimating lens and the light-transmitting sealing component 3 can be separately arranged, and the collimating lens and the light-transmitting component can be fixedly connected together. It should be noted that the dispensing position needs to avoid the optical effective area. The collimating lens and the light-transmitting sealing component 3 can also be integrally arranged, omitting the mounting process of the collimating lens, simplifying the process flow, and being beneficial to reducing the packaging cost.

[0101] On the basis of the above embodiments, the embodiment of the present application further provides a display device, including any one of the above lasers, and having corresponding beneficial effects. To avoid repeated description, it will not be elaborated here.

[0102] Among them, the display device includes but is not limited to laser projection devices and laser TVs, and also includes all types of display devices and apparatuses known to those skilled in the art, which are not limited here.

[0103] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

[0104] For the sake of explanation, the above description has been made in conjunction with specific embodiments. However, the above exemplary discussion is not intended to be exhaustive or to limit the embodiments to the specific forms disclosed above. According to the above teachings, various modifications and variations can be obtained. The selection and description of the above embodiments are for the purpose of better explaining the principles and practical applications, so that those skilled in the art can better use the embodiments and various different variations of the embodiments suitable for specific use considerations.

Claims

1. A laser, characterized in that: include: The tube shell comprises a bottom plate and an annular side wall, wherein the annular side wall is located on one side of the bottom plate, and the side of the annular side wall facing away from the bottom plate has an opening; A light-transmitting sealing component, located on a side of the annular side wall away from the bottom plate and covering the opening; Improved solder, located between the annular side wall and the light-transmitting sealing component, used to connect the annular side wall and the light-transmitting sealing component; The melting point of the improved solder is greater than or equal to 210° C., and / or the melting point of the improved solder is less than or equal to 240° C.

2. The laser according to claim 1, characterized in that The melting point of the improved solder is greater than or equal to 216° C., and / or the melting point of the improved solder is less than or equal to 219° C.

3. The laser according to claim 1, characterized in that Also includes: A first sealing structure, recessed toward a side of the annular side wall away from the light-transmitting sealing component; The improved solder is filled in the first sealing structure and protrudes from the first sealing structure.

4. The laser according to claim 3, characterized in that The shape of the first sealing structure includes at least one of a triangle, a rectangle and a trapezoid.

5. The laser according to claim 4, characterized in that In a direction perpendicular to the plane where the bottom plate is located, the depth of the first sealing structure is greater than or equal to 50 μm, and / or the depth of the first sealing structure is less than or equal to 100 μm; In the thickness direction of the annular side wall, the width of the first sealing structure is greater than or equal to 100 μm, and / or the width of the first sealing structure is less than or equal to 300 μm.

6. The laser according to claim 3, characterized in that The shape of the first sealing structure includes an arc shape; The radius of curvature of the first sealing structure is greater than or equal to 0.05 mm, and / or the radius of curvature of the first sealing structure is less than or equal to 0.09 mm.

7. The laser according to any one of claims 3 to 6, characterized in that: The number of the first sealing structures is greater than or equal to 2, and / or the number of the first sealing structures is less than or equal to 5.

8. The laser according to claim 3, characterized in that Also includes: a second sealing structure protruding toward a side of the light-transmitting sealing component toward the annular side wall; The second sealing structure is embedded in the first sealing structure.

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