Silicon wafer carrier plate and vapor phase chemical deposition equipment

Abstract

The utility model discloses a silicon wafer carrier plate and vapor phase chemical deposition equipment, and the silicon wafer carrier plate comprises a carrier plate body which is provided with a plurality of grooves, and the grooves are used for placing silicon wafers; and a plurality of supporting parts, at least two supporting parts are arranged in each groove, the at least two supporting parts are arranged in the groove at intervals, and the supporting parts are used for supporting the silicon wafers. Therefore, the supporting force can be provided for the silicon wafer, so that the silicon wafer can be prevented from deforming, and the coating uniformity of the surface of the silicon wafer can be improved. Moreover, the at least two supporting parts are arranged in the groove at intervals, so that the stress of the silicon wafer can be ensured to be more uniform, the silicon wafer can be prevented from being broken due to too high pumping speed in the vacuum cavity, and the qualified yield of the silicon wafer carrier plate can be further improved.

Description

Technical Field

[0001] The utility model relates to the technical field of photovoltaic, in particular to a carrier plate for silicon wafers and a chemical vapor deposition device. Background Art

[0002] In the prior art, with the continuous thinning of silicon wafers, due to design problems of the carrier plates for silicon wafers, the carrier plates themselves can no longer meet the usage requirements after the silicon wafers are thinned, with low strength, easy deformation, and reduced product yield. Content of the Utility Model

[0003] The utility model aims to solve at least one of the technical problems existing in the prior art. For this purpose, the utility model provides a carrier plate for silicon wafers, which can provide support force for the silicon wafers, thereby preventing the silicon wafers from deforming and improving the coating uniformity on the surface of the silicon wafers. Moreover, at least two support parts are arranged at intervals in the groove, so that the force on the silicon wafers can be more uniform, and the silicon wafers can be prevented from being fragmented due to too fast pumping speed in the vacuum chamber, thereby further improving the qualified rate of the carrier plates for silicon wafers.

[0004] The utility model also provides a chemical vapor deposition device.

[0005] The carrier plate for silicon wafers according to the first aspect embodiment of the utility model includes: a carrier plate body, wherein the carrier plate body is provided with a plurality of grooves for placing the silicon wafers; and a plurality of support parts, with at least two support parts arranged in each groove at intervals in the groove, and the support parts are used for supporting the silicon wafers.

[0006] Thus, the carrier plate for silicon wafers can provide support force for the silicon wafers, thereby preventing the silicon wafers from deforming and improving the coating uniformity on the surface of the silicon wafers. Moreover, at least two support parts are arranged at intervals in the groove, so that the force on the silicon wafers can be more uniform, and the silicon wafers can be prevented from being fragmented due to too fast pumping speed in the vacuum chamber, thereby further improving the qualified rate of the carrier plates for silicon wafers.

[0007] According to some embodiments of the utility model, the at least two support parts include: a first support part and a second support part, and the first support part and the second support part are arranged at intervals in the corresponding groove along the length direction and width direction of the groove.

[0008] According to some embodiments of the utility model, the centers of the first support part and the second support part are located on the same diagonal line of the groove.

[0009] According to some embodiments of the present utility model, the supporting part is arranged at the bottom of the groove, the supporting part is configured as a protrusion, and the cross-sectional area of the protrusion decreases in the direction away from the bottom of the groove.

[0010] According to some embodiments of the present utility model, a guiding inclined surface is arranged at the edge of the notch of the groove, and the guiding inclined surface extends obliquely towards the bottom of the groove.

[0011] According to some embodiments of the present utility model, a step is formed at the edge of the bottom of the groove, an avoiding inclined surface is arranged at the edge of the step, and the avoiding inclined surface extends obliquely towards the bottom of the groove.

[0012] According to some embodiments of the present utility model, the surface roughness of the step is Ra, and Ra satisfies the relational expression: Ra ≤ 5.5.

[0013] According to some embodiments of the present utility model, a step is formed at the edge of the bottom of the groove, air holes are arranged at the corners of the step, notches are arranged at the corners of the groove, and the notches and the air holes are arranged at intervals relative to each other.

[0014] According to some embodiments of the present utility model, the corners of the carrier plate body are set as guiding angles, and the guiding angles are non-right angles; and / or a plurality of mounting holes are arranged at the edge of the carrier plate body, the plurality of mounting holes are arranged at intervals along the edge of the carrier plate body, and the mounting holes are used for mounting a frame; and / or a camera positioning hole is arranged at the edge of the carrier plate body, and the camera positioning hole is used for mounting a camera.

[0015] The chemical vapor deposition device according to the second aspect embodiment of the present utility model includes: the carrier plate of the silicon wafer as described above.

[0016] The additional aspects and advantages of the present utility model will be partially given in the following description, partially become obvious from the following description, or be understood through the practice of the present utility model. Description of the Drawings

[0017] The above and / or additional aspects and advantages of the present utility model will become obvious and easy to understand from the description of the embodiments in conjunction with the following drawings, wherein:

[0018] Figure 1 is a schematic structural diagram of a carrier plate of a silicon wafer according to an embodiment of the present utility model;

[0019] Figure 2 is Figure 1 an enlarged view of area A in

[0020] Figure 3 is Figure 1 an enlarged view of area B in

[0021] Figure 4 is Figure 1 a sectional view of;

[0022] Figure 5 is Figure 4 an enlarged view of region D in;

[0023] Figure 6 is Figure 4 an enlarged view of region E in;

[0024] Figure 7 is a schematic diagram of coating a silicon wafer in chamber a;

[0025] Figure 8 is a schematic diagram of coating a silicon wafer in chamber b;

[0026] Figure 9 is a schematic diagram of coating a silicon wafer in chamber c.

[0027] Reference numerals:

[0028] 100, a carrier plate for a silicon wafer;

[0029] 10, a carrier plate body; 11, a groove; 12, a guiding angle; 13, a mounting hole; 14, a camera positioning hole;

[0030] 20, a supporting portion; 21, a first supporting portion; 22, a second supporting portion;

[0031] 30, a guiding inclined surface;

[0032] 40, a step; 41, an avoiding inclined surface; 42, an air hole;

[0033] 50, a notch. Specific embodiments

[0034] The embodiments of the present invention will be described in detail below. The embodiments described with reference to the drawings are exemplary. The embodiments of the present invention will be described in detail below.

[0035] Next, reference is made to Figures 1 - 9 describe the carrier plate 100 for a silicon wafer according to an embodiment of the present invention.

[0036] Referring to Figures 1 - 5 as shown, the carrier plate 100 for a silicon wafer according to the first aspect embodiment of the present invention includes: a carrier plate body 10 and a plurality of supporting portions 20. The carrier plate body 10 is provided with a plurality of grooves 11 for placing silicon wafers. At least two supporting portions 20 are arranged at intervals in each groove 11, and the supporting portions 20 are used to support the silicon wafers.

[0037] Specifically, in the case of continuous thinning of existing silicon wafers, due to design problems of existing silicon wafer carriers, the carriers themselves can no longer meet the usage requirements after the silicon wafers are thinned. They have low strength and are prone to deformation, thus reducing the product yield.

[0038] Therefore, it is necessary to optimize the design of the silicon wafer carrier 100. The silicon wafer carrier 100 mainly consists of a carrier body 10 and a plurality of support parts 20. The carrier body 10 is provided with a plurality of grooves 11, which can facilitate the placement of silicon wafers. Moreover, at least two support parts 20 are arranged in each groove 11. In this way, support force can be provided for the silicon wafers, thereby preventing the silicon wafers from deforming and improving the coating uniformity on the surface of the silicon wafers.

[0039] Furthermore, at least two support parts 20 are arranged at intervals in the groove 11. In this way, it can ensure that the silicon wafers are stressed more evenly and avoid the silicon wafers from fragmenting due to too fast pumping speed in the vacuum chamber, thereby further improving the qualified rate of the silicon wafer carrier. Among them, the silicon wafer carrier 100 can be applicable to 210.1μm silicon wafers.

[0040] Thus, the silicon wafer carrier 100 can provide support force for the silicon wafers, thereby preventing the silicon wafers from deforming and improving the coating uniformity on the surface of the silicon wafers. Moreover, at least two support parts 20 are arranged at intervals in the groove 11. In this way, it can ensure that the silicon wafers are stressed more evenly and avoid the silicon wafers from fragmenting due to too fast pumping speed in the vacuum chamber, thereby further improving the qualified rate of the silicon wafer carrier.

[0041] According to some embodiments of the present invention, as Figure 2 shown, at least two support parts 20 include: a first support part 21 and a second support part 22. The first support part 21 and the second support part 22 are arranged at intervals in the corresponding groove 11 along the length direction and width direction of the groove 11.

[0042] In this way, the first support part 21 and the second support part 22 can provide support force in both the length direction and width direction of the silicon wafers, thereby preventing the silicon wafers from deforming in the length direction and width direction.

[0043] Also, as Figure 7 and Figure 8 shown, after the silicon wafers are coated in the a cavity, they are flipped 180° by an automatic flipper and then coated in the b state inside the b cavity. After being flipped 180° by the automatic flipper again, they are coated in the c state inside the c cavity. In this way, the silicon wafers after the flipped coating correspond and overlap with the first support part 21 and the second support part 22, thereby reducing the imprints of the support parts 20. Later, they can be covered by grid lines, which can improve the product qualified rate.

[0044] According to a specific embodiment of the present utility model, as Figure 2 shown, the centers of the first support portion 21 and the second support portion 22 are located on the same diagonal line of the groove 11.

[0045] Specifically, the first support portion 21 and the second support portion 22 are distributed on the diagonal line of the groove 11, which can effectively disperse the concentrated force and avoid deformation or damage caused by excessive local stress on the silicon wafer. Moreover, the first support portion 21 and the second support portion 22 are located at the diagonal positions, which can effectively resist the forces from all directions, so that they can cooperate with the silicon wafer more firmly.

[0046] According to some embodiments of the present utility model, as Figure 5 shown, the support portion 20 is arranged at the bottom of the groove 11, and the support portion 20 is configured as a protrusion, and the cross-sectional area of the protrusion decreases in the direction away from the bottom of the groove 11.

[0047] Among them, the support portion 20 is arranged as a protrusion, and the design of the protrusion can better disperse the load. At the position where the protrusion is away from the bottom of the groove 11, the decreasing cross-sectional area can decrease according to the change of the load, which can not only reduce the material, but also reduce the possibility of local stress concentration, and can also improve the bearing capacity and stability of the support portion 20.

[0048] According to some embodiments of the present utility model, as Figure 6 shown, a guiding inclined surface 30 is arranged at the edge of the notch of the groove 11, and the guiding inclined surface 30 extends obliquely towards the bottom of the groove 11.

[0049] Among them, the arrangement of the guiding inclined surface 30 at the edge of the notch of the groove 11 can play a guiding role during the process of placing the silicon wafer, so that the silicon wafer can slide into the groove 11 under the condition of slight deviation.

[0050] Furthermore, the guiding inclined surface 30 extends obliquely towards the bottom of the groove 11. In this way, during the process of placing the silicon wafer, the silicon wafer can be gradually moved along the guiding inclined surface 30 and finally slide into the groove 11, which can not only accurately place the silicon wafer in the groove 11, but also avoid the collision of the silicon wafer during the placement process.

[0051] In addition, the guiding inclined surface 30 is arranged as a chamfered inclined surface, which can not only avoid stress concentration at the edge of the notch of the groove 11, but also prevent damage to the surface of the silicon wafer by the edge of the notch of the groove 11.

[0052] According to some embodiments of the present utility model, as Figure 6 shown, a step 40 is formed at the bottom edge of the groove 11, and an avoidance inclined surface 41 is arranged at the edge of the step 40, and the avoidance inclined surface 41 extends obliquely towards the bottom of the groove 11.

[0053] Among them, the provision of the step 40 can provide a supporting effect for the silicon wafer and increase the contact area between the silicon wafer and the step 40, thereby reducing the force between the silicon wafer and the step 40.

[0054] Moreover, an avoidance inclined surface 41 is provided at the edge of the step 40. The avoidance inclined surface 41 can eliminate the fixture marks caused by the contact between the silicon wafer and the edge of the step 40, thereby improving the yield rate of the silicon wafer carrier.

[0055] According to some embodiments of the present invention, the surface roughness of the step 40 is Ra, and Ra satisfies the relational expression: Ra ≤ 5.5.

[0056] Among them, the surface roughness Ra of the step 40 can be set to 4.5, 4.7 or 5, so that the surface roughness of the step 40 can match the silicon wafer, reduce the friction between the step 40 and the silicon wafer, and thereby improve the yield rate.

[0057] According to some embodiments of the present invention, a step 40 is formed at the bottom edge of the groove 11. Air holes 42 are provided at the corners of the step 40, and a notch 50 is provided at the corner of the groove 11. The notch 50 and the air holes 42 are arranged at intervals.

[0058] Among them, each groove 11 has four corners of the step 40, and air holes 42 are provided at the four corners of the step 40, so that the silicon wafer can be prevented from moving on the carrier during the vacuum pumping process. Further, a notch 50 is provided at the corner of the groove 11. Since the groove 11 has four corners, a notch 50 can be opened at each corner, so that during the process of taking the silicon wafer, the right angle of the silicon wafer can be prevented from rubbing against the carrier and causing fragmentation.

[0059] In addition, the notch 50 and the air holes 42 are arranged at intervals. Vacuum pumping at the air holes 42 can tightly adsorb the silicon wafer on the carrier. The provision of the notch 50 can prevent the right angle of the silicon wafer from colliding with the corner of the groove 11.

[0060] According to some embodiments of the present invention, as Figure 1 shown, the corners of the carrier body 10 are provided with guiding angles 12, the guiding angles 12 are non-right angles, and / or a plurality of mounting holes 13 are provided at the edge of the carrier body 10. The plurality of mounting holes 13 are arranged at intervals along the edge of the carrier body 10. The mounting holes 13 are used for mounting the frame, and / or a camera positioning hole 14 is provided at the edge of the carrier body 10. The camera positioning hole 14 is used for mounting the camera.

[0061] Among them, guiding angles 12 are provided at the four corners of the carrier body 10, and the guiding angles 12 are oblique angles, so that the corners of the carrier body 10 can be prevented from being impacted during movement.

[0062] Further, a plurality of mounting holes 13 are provided at the edge of the carrier body 10. Fasteners passing through the mounting holes 13 can be used to mount the carrier to the frame for fixing the carrier, and also facilitate the disassembly of the carrier from the frame for fixing the carrier. Among them, the fasteners can be screws.

[0063] In addition, camera positioning holes 14 are provided at the edge of the carrier body 10. A CCD camera is provided at the position of the camera positioning holes 14. The CCD camera can be used for position recognition and can also correct the carrier, thereby improving the accuracy of placing the silicon wafer.

[0064] According to the chemical vapor deposition apparatus of the second aspect embodiment of the present invention, it includes: the carrier 100 of the silicon wafer in the above embodiment.

[0065] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention.

[0066] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "schematic embodiments", "examples", "specific examples", or "some examples", etc. means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example.

[0067] Although the embodiments of the present invention have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and spirit of the present invention. The scope of the present invention is defined by the claims and their equivalents.

Claims

1. A silicon wafer carrier, characterized in that: include: A carrier body, wherein the carrier body is provided with a plurality of grooves, and the grooves are used to place the silicon wafers; A plurality of support parts, each of the grooves is provided with at least two support parts, the at least two support parts are arranged at intervals in the groove, and the support parts are used to support the silicon wafer; A guiding slope is arranged at the notch edge of the groove, and the guiding slope extends obliquely toward the groove bottom of the groove.

2. The silicon wafer carrier according to claim 1, characterized in that: The at least two supporting parts include: a first supporting part and a second supporting part, and the first supporting part and the second supporting part are arranged in the corresponding groove along the length direction and the width direction of the groove at intervals.

3. The silicon wafer carrier according to claim 2, characterized in that: A center of the first supporting portion and a center of the second supporting portion are located on the same diagonal line of the groove.

4. The silicon wafer carrier according to claim 1, characterized in that: The support portion is arranged at the groove bottom of the groove, and the support portion is configured as a protrusion, and the cross-sectional area of ​​the protrusion decreases in a direction away from the groove bottom of the groove.

5. The silicon wafer carrier according to claim 1, characterized in that: A step is formed at the bottom edge of the groove, and an avoidance slope is arranged at the edge of the step. The avoidance slope extends obliquely toward the bottom of the groove.

6. The silicon wafer carrier according to claim 5, characterized in that: The surface roughness of the step is Ra, and Ra satisfies the relationship: Ra≤5.

5.

7. The silicon wafer carrier according to claim 1, characterized in that: A step is formed at the bottom edge of the groove, air holes are arranged at the corners of the step, and a notch is arranged at the corners of the groove, and the notch is arranged with a relative interval to the air hole.

8. The silicon wafer carrier according to claim 1, characterized in that: The corners of the carrier body are arranged as guide angles, and the guide angles are non-right angles; and / or The edge of the carrier body is provided with a plurality of mounting holes, the plurality of mounting holes are arranged at intervals along the edge of the carrier body, and the mounting holes are used to install the frame; and / or A camera positioning hole is provided at the edge of the carrier body, and the camera positioning hole is used to install a camera.

9. A vapor phase chemical deposition device, characterized in that: include: A carrier for a silicon wafer as claimed in any one of claims 1 to 8.

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