Micro heating chip structure and micro heating chip
By setting up a uniform heat layer with high thermal conductivity on the upper and lower sides of the insulating layer of the micro-heating chip, the problem of difficult heat transfer in the heating zone is solved, and the uniform distribution of heat is achieved, the temperature difference and thermal stress gradient are reduced, the insulation layer is prevented from fragmentation, the chip life is extended and its reliability is improved.
Patent Information
- Application Number
- CN202421375466.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-17
- Publication Date
- 2025-06-27
- Estimated Expiration
- 2034-06-17
AI Technical Summary
During the heating process, the existing micro-heating chips have a good thermal insulation performance of the insulating layer, which makes it difficult to transfer heat to the gap between metal resistive wires, resulting in too large temperature difference, causing a thermal stress gradient, which leads to the fragmentation of the insulating layer and the chip cannot be used normally.
A uniform heat layer is provided on the upper and/or lower sides of the insulating layer. The thermal conductivity of the uniform heat layer is higher than that of the insulating layer, which is used to uniformly distribute the heat in the heating zone, reduce local temperature difference, and reduce thermal stress gradient.
Through the use of a uniform heat layer, heat is distributed more evenly in the heating zone, reducing the temperature difference and thermal stress gradient, preventing the insulating layer from being broken, extending the chip life, and improving the reliability of the chip.
Smart Images
Figure CN223040161U_ABST
Abstract
Description
Technical Field
[0001] The utility model belongs to the technical field of micro - heating chips, and particularly relates to a micro - heating chip structure and a micro - heating chip. Background Art
[0002] There is a conventional micro - heating chip. This chip uses a silicon oxide film with good heat insulation performance as an insulating layer to fix a metal resistance wire and form a heating area. During the manufacturing of this chip, the metal resistance wire is obtained through patterning, and the shape of the metal resistance wire is generally designed as a serpentine or spiral shape. Therefore, there will be a certain gap between adjacent metal resistance wires. When the metal resistance wire is heated, its heat radiates outward with the metal resistance wire as the source. However, due to the good heat insulation performance of the insulating layer, it is difficult for the heat to be transferred through the insulating layer to the gap between the metal resistance wires. Therefore, the temperature at the position of the metal resistance wire in the heating area will be significantly higher than the temperature in the gap between the metal resistance wires. In practical applications, a thermal stress gradient will occur in the heating area due to this temperature difference, resulting in fragmentation at the places with a large temperature difference in the insulating layer, and ultimately causing the chip to be damaged and unable to be used normally.
[0003] Therefore, the existing technology needs to be improved and developed. Summary of the Utility Model
[0004] The purpose of the utility model is to provide a micro - heating chip structure and a micro - heating chip, which can avoid excessive thermal stress gradient in the insulating layer, thereby avoiding fragmentation of the insulating layer and ensuring the normal use of the chip.
[0005] In a first aspect, the utility model provides a micro - heating chip structure, including a substrate, an insulating layer, and a metal resistance wire fixed in the insulating layer. The insulating layer is arranged above the substrate in an overhead manner to form a suspended film area, and the metal resistance wire is located in the suspended film area so that part or all of the suspended film area becomes a heating area; it further includes:
[0006] A heat - equalizing layer, the heat - equalizing layer is arranged on the upper side and / or the lower side of the insulating layer, and the area of the insulating layer on either side is greater than or equal to the area of the heating area and less than or equal to the area of the suspended film area; the thermal conductivity of the heat - equalizing layer is higher than that of the insulating layer; the heat - equalizing layer is used to evenly distribute the heat in the heating area.
[0007] The micro - heating chip structure provided by the utility model reduces the local temperature difference in the heating area through the heat - equalizing layer, thereby reducing the thermal stress gradient, achieving the effects of preventing the chip structure from fragmenting, extending the chip life, and improving the chip reliability.
[0008] Further, the heat - equalizing layer correspondingly covers the upper side and / or the lower side of the entire suspended film area.
[0009] It can simplify the manufacturing process and achieve the effect of improving production efficiency.
[0010] Furthermore, the insulating layer includes a bottom layer structure and a top layer structure. The top layer structure is laminated with the bottom layer structure and serves as the upper layer of the bottom layer structure. The metal resistance wire is disposed between the bottom layer structure and the top layer structure and is wrapped by the bottom layer structure and the top layer structure.
[0011] The metal resistance wire is wrapped between the bottom layer structure and the top layer structure and is isolated from the outside world, which can effectively prevent the metal resistance wire from being short-circuited due to external influence.
[0012] Furthermore, the heat conduction layer is made of a metal material.
[0013] Furthermore, the thickness of the heat conduction layer is 5 - 500 nm.
[0014] Furthermore, the thickness of the heat conduction layer is 30 nm, 50 nm or 100 nm.
[0015] Furthermore, the insulating layer is made of silicon oxide and / or silicon nitride material.
[0016] Furthermore, the thickness of the insulating layer is 1 - 10 μm.
[0017] Furthermore, the metal resistance wire is made of platinum and / or nickel material.
[0018] In a second aspect, the present utility model provides a micro-heating chip, including the above-mentioned micro-heating chip structure.
[0019] As can be seen from the above, the micro-heating chip structure of the present utility model makes the heat generated by the metal resistance wire more evenly distributed in the heating area by providing a heat conduction layer on the upper side and / or the lower side of the insulating layer, thereby reducing the local temperature difference in the heating area, avoiding an excessive thermal stress gradient in the heating area, being beneficial to preventing the insulating layer from cracking, and ensuring the normal use of the chip.
[0020] Other features and advantages of the present utility model will be described in the subsequent specification. And, some of them will become obvious from the specification, or can be understood by implementing the embodiments of the present utility model. The objectives and other advantages of the present utility model can be achieved and obtained by the structures specifically pointed out in the written specification and the drawings. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] Figure 1 It is a schematic cross-sectional structure view of a micro-heating chip structure provided by an embodiment of the present utility model.
[0022] Figure 2 It is a bottom view of a micro-heating chip structure provided by an embodiment of the present utility model.
[0023] Description of reference numerals:
[0024] 100, substrate; 200, insulating layer; 210, bottom structure; 220, top structure; 300, metal resistance wire; 400, suspended film area; 500, heating area; 600, heat - equalizing layer. Specific embodiments
[0025] The following describes in detail the embodiments of the present invention. Examples of the embodiments are shown in the drawings, where the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the drawings are exemplary only for explaining the present invention and should not be construed as limiting the present invention.
[0026] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings. These are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they should not be construed as limiting the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of the said features. In the description of the present invention, "a plurality" means two or more unless otherwise specifically defined.
[0027] In the description of the present invention, it should be noted that unless otherwise clearly specified and defined, the terms "mounted", "connected", "coupled" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or a connection that allows mutual communication; it can be directly connected, or indirectly connected through an intermediate medium, and can be the internal communication of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0028] In the present utility model, unless otherwise clearly defined and limited, the first feature being "above" or "below" the second feature may include direct contact between the first and second features, or may include the first and second features not being in direct contact but in contact through additional features therebetween. Moreover, the first feature being "above", "over" and "on top of" the second feature includes the first feature being directly above and obliquely above the second feature, or merely indicating that the horizontal height of the first feature is higher than that of the second feature. The first feature being "below", "under" and "beneath" the second feature includes the first feature being directly below and obliquely below the second feature, or merely indicating that the horizontal height of the first feature is less than that of the second feature.
[0029] The following disclosure provides many different embodiments or examples for implementing different structures of the present utility model. To simplify the disclosure of the present utility model, components and settings of specific examples are described below. Of course, they are merely examples and are not intended to limit the present utility model. In addition, the present utility model may repeat reference numerals and / or reference letters in different examples. This repetition is for the purpose of simplification and clarity, and does not itself indicate the relationship between the various embodiments and / or settings discussed. In addition, the present utility model provides examples of various specific processes and materials, but those of ordinary skill in the art can be aware of the application of other processes and / or the use of other materials.
[0030] Referring to the Figure 1 and the Figure 2 , the present utility model provides a micro-heating chip structure, including a substrate 100, an insulating layer 200, and a metal resistance wire 300 fixed in the insulating layer 200. The insulating layer 200 is arranged above the substrate 100 in a suspended manner to form a suspended film area 400. The metal resistance wire 300 is located in the suspended film area 400 so that part or all of the suspended film area 400 becomes a heating area 500; further including:
[0031] A heat homogenizing layer 600, the heat homogenizing layer 600 is arranged on the upper side and / or the lower side of the insulating layer 200, and the area of the insulating layer 200 on any one side is greater than or equal to the area of the heating area 500 and less than or equal to the area of the suspended film area 400; the thermal conductivity of the heat homogenizing layer 600 is higher than that of the insulating layer 200; the heat homogenizing layer 600 is used to evenly distribute the heat in the heating area 500.
[0032] In this embodiment, in actual application, the heat homogenizing layer 600 absorbs the heat of the metal resistance wire 300 and transfers it to the gap between adjacent metal resistance wires 300 to reduce the temperature difference between various positions of the insulating layer 200 (especially the temperature difference between the position of the metal resistance wire 300 and the adjacent gap position), thereby avoiding excessive thermal stress gradient in the insulating layer 200 and achieving the effect of preventing the insulating layer 200 from cracking and protecting the chip.
[0033] In addition, when the heat - equalizing layer 600 covers both the upper and lower sides of the suspended - film region 400 simultaneously, heat can be transferred from both the upper and lower sides to the gaps between adjacent metal resistance wires 300. As a result, the temperature at the gap positions rises faster, achieving a reduction in the temperature difference in a shorter time.
[0034] It should be noted that the metal resistance wires 300 generally undergo a patterning process. After the patterning process, the metal resistance wires 300 may be designed in a serpentine or spiral shape. The heating region 500 can be regarded as the smallest enclosing region that covers all the metal resistance wires 300 and the gaps between adjacent metal resistance wires 300 (which can be a regular - shaped circle, square, rectangle, etc., or an irregular - shaped polygon). Since the purpose of the heat - equalizing layer 600 is to make the heat distribution in the heating region 500 more uniform, the heat - equalizing layer 600 cannot be patterned to have the same or similar shape as the metal resistance wires 300. Therefore, for example, when a part of the suspended - film region 400 becomes the heating region 500, the heat - equalizing layer 600 can be patterned to have the same shape as the heating region 500. This reduces the material usage for manufacturing the heat - equalizing layer 600, reduces unnecessary material waste, and is conducive to saving raw material costs.
[0035] In some embodiments, the heat - equalizing layer 600 correspondingly covers the upper side and / or the lower side of the entire suspended - film region 400.
[0036] In this embodiment, the heat - equalizing layer 600 may also not undergo a patterning process. Because whether a part of the suspended - film region 400 becomes the heating region 500 or the entire suspended - film region 400 becomes the heating region 500, the heating region 500 is within the coverage of the suspended - film region 400. Therefore, covering the entire suspended - film region 400 with the heat - equalizing layer 600 can cover all the metal resistance wires 300 and the gaps between adjacent metal resistance wires 300. Although it may increase the material usage of the heat - equalizing layer 600, it can simplify the manufacturing process and achieve the effect of improving production efficiency.
[0037] In some embodiments, referring to the attached Figure 1 , the insulating layer 200 includes a bottom - layer structure 210 and a top - layer structure 220. The top - layer structure 220 is laminated on the bottom - layer structure 210 and serves as the upper layer of the bottom - layer structure 210. The metal resistance wires 300 are disposed between the bottom - layer structure 210 and the top - layer structure 220 and are wrapped by the bottom - layer structure 210 and the top - layer structure 220.
[0038] In this embodiment, the insulating layer 200 is fabricated in two layers. The metal resistance wire 300 is wrapped between the bottom layer structure 210 and the top layer structure 220 and isolated from the outside world, which can effectively prevent the metal resistance wire 300 from being short-circuited due to external influences. Further, after the suspension film area 400 is fabricated, a heat homogenizing layer 600 is provided on the upper side and / or the lower side of the suspension film area 400 to evenly distribute the heat of the metal resistance wire 300 throughout the heating area 500, achieving the effects of preventing the insulating layer 200 from cracking and ensuring the normal use of the chip.
[0039] In some embodiments, the heat homogenizing layer 600 is made of a metal material, such as copper, aluminum, silver, etc., and alloys containing multiple metals.
[0040] In some embodiments, the thickness of the heat homogenizing layer 600 is 5 - 500 nm.
[0041] In some embodiments, the thickness of the heat homogenizing layer 600 is 30 nm, 50 nm, or 100 nm.
[0042] In some embodiments, the insulating layer 200 is made of silicon oxide and / or silicon nitride materials.
[0043] In some embodiments, the thickness of the insulating layer 200 is 1 - 10 μm.
[0044] In some embodiments, the metal resistance wire 300 is made of platinum and / or nickel materials.
[0045] The present utility model provides a micro-heating chip, including the micro-heating chip structure in the above embodiment.
[0046] In the description of this specification, the descriptions with reference to terms such as "one embodiment", "certain embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples", etc. mean that the specific features, structures, materials, or characteristics described in connection with the said embodiment or example are included in at least one embodiment or example of the present utility model. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples.
[0047] The above are only some embodiments of the present utility model. For those of ordinary skill in the art, without departing from the creative concept of the present utility model, several modifications and improvements can still be made, and these all belong to the protection scope of the present utility model.
Claims
1. A micro-heating chip structure, comprising a substrate (100), an insulating layer (200) and a metal resistance wire (300) fixed in the insulating layer (200), wherein the insulating layer (200) is suspended above the substrate (100) and forms a suspended film area (400), and the metal resistance wire (300) is located in the suspended film area (400) so that part or all of the suspended film area (400) becomes a heating area (500); characterized in that: Also includes: A uniform heat layer (600), wherein the uniform heat layer (600) is arranged on the upper side and / or the lower side of the insulating layer (200), and the area of the insulating layer (200) on either side is greater than or equal to the area of the heating zone (500) and less than or equal to the area of the suspended film zone (400); the thermal conductivity of the uniform heat layer (600) is higher than the thermal conductivity of the insulating layer (200); and the uniform heat layer (600) is used to evenly distribute the heat of the heating zone (500).
2. The micro-heating chip structure according to claim 1, characterized in that: The uniform heat layer (600) correspondingly covers the upper side and / or the lower side of the entire suspended film area (400).
3. The micro-heating chip structure according to claim 1, characterized in that: The insulating layer (200) comprises a bottom structure (210) and a top structure (220), wherein the top structure (220) is stacked with the bottom structure (210) and serves as an upper layer of the bottom structure (210); the metal resistance wire (300) is arranged between the bottom structure (210) and the top structure (220) and is wrapped by the bottom structure (210) and the top structure (220).
4. The micro-heating chip structure according to claim 1, characterized in that: The heat-uniform layer (600) is made of metal material.
5. The micro-heating chip structure according to claim 1, characterized in that: The thickness of the heat-uniform layer (600) is 5-500 nm.
6. The micro-heating chip structure according to claim 5, characterized in that: The thickness of the heat-uniform layer (600) is 30 nm, 50 nm or 100 nm.
7. The micro-heating chip structure according to claim 1, characterized in that: The insulating layer (200) is made of silicon oxide and / or silicon nitride material.
8. The micro-heating chip structure according to claim 7, characterized in that: The thickness of the insulating layer (200) is 1-10 um.
9. The micro-heating chip structure according to claim 1, characterized in that: The metal resistance wire (300) is made of platinum and / or nickel material.
10. A micro-heating chip, characterized in that: The invention comprises the micro-heating chip structure as claimed in any one of claims 1 to 9.