Nanoscale layered deposition ITO (Indium Tin Oxide) film coating device

Abstract

The utility model discloses a nanoscale layered deposition ITO (Indium Tin Oxide) film coating device which comprises a table body, a manipulator arranged at the top of the table body, a sheet feeding chamber arranged on the outer wall of one side of the table body, a sheet discharging chamber arranged on the outer wall of the other side of the table body, a loading and unloading station arranged in front of the sheet feeding chamber, and a backflow frame arranged in front of the sheet discharging chamber, detachable substrate frames are mounted at the top ends of the loading and unloading station and the backflow frame, substrate jigs are mounted in the substrate frames, a coating chamber is mounted at the rear end of the table body, a rotary drum is rotationally connected to the center of the top of the coating chamber, ITO cathodes are fixedly connected to the two ends of the top of the coating chamber, and an ICP ion source is fixedly connected to the rear end of the coating chamber; according to the coating device, the process method and the process principle of nanoscale layered deposition and crystallization are utilized, the nanoscale layered deposition and crystallization coating equipment is manufactured, and the performance problems of insufficient crystallization degree, low transmittance, poor uniformity and the like of substrates such as various plastics, PCBs (printed circuit boards), display or semiconductor devices and the like when ITO is deposited at low temperature are solved.

Description

Technical Field

[0001] The utility model relates to the technical field of coating equipment, in particular to an ITO film coating device for nano-level layered deposition. Background Art

[0002] As an excellent transparent conductive material, the ITO thin film, also known as indium tin oxide thin film, has high transparency, low resistance, excellent electrical conductivity and chemical stability, showing broad application prospects in various fields.

[0003] There are the following problems: In ITO thin film coating, the magnetron sputtering coating technology is the most mainstream technology. However, when preparing ITO thin films by the magnetron sputtering method, it is usually required to heat the substrate at a high temperature above 200 °C to obtain high-quality crystalline ITO thin films. In theory, the crystallization temperature of ITO is very low, starting to crystallize at 80 °C. However, the crystallization of ITO is a process that requires obtaining energy from the outside. The temperature of the substrate is 80 °C, which is relatively low, and the speed of obtaining energy is slow. Therefore, the crystallization rate of the ITO thin film is very slow, and the degree of crystallization is very low. When the substrate temperature rises above 200 °C, the crystallization rate of ITO increases significantly, and the degree of crystallization improves, reaching a relatively ideal ITO film quality. With the development of electronic products and the diversification of substrate materials, many substrate materials, especially flexible plastic substrate materials, cannot withstand the high temperature coating at 200 °C. Therefore, it is difficult to prepare high-quality ITO thin films with high transmittance at low temperatures. Summary of the Utility Model

[0004] The purpose of this part is to outline some aspects of the embodiments of the utility model and briefly introduce some preferred embodiments. Simplifications or omissions may be made in this part, as well as in the abstract and title of the application, to avoid obscuring the purpose of this part, the abstract, and the title. However, such simplifications or omissions shall not be used to limit the scope of the utility model.

[0005] To solve the above problems, the utility model adopts the following technical solutions.

[0006] An ITO film coating device for nano-level layered deposition includes a table body. A manipulator is installed on the top of the table body. An inlet chamber is installed on one outer wall of the table body, and an outlet chamber is installed on the other outer wall of the table body. A loading and unloading station is installed in front of the inlet chamber, and a return rack is installed in front of the outlet chamber. Removable substrate holders are installed at the tops of the loading and unloading station and the return rack. Substrate fixtures are installed in the substrate holders. A coating chamber is installed at the rear end of the table body. A rotating drum is rotatably connected to the center of the top of the coating chamber. ITO cathodes are fixedly connected to both ends of the top of the coating chamber. An ICP ion source is fixedly connected to the rear end of the coating chamber. Molecular pumps are installed at both ends of the rotating drum and on the other two sides of the coating chamber.

[0007] As a further description of the above technical solution:

[0008] A first camera is installed at one end of the film feeding chamber, a second camera is installed at the other end of the film feeding chamber, and a first translation station is installed on one side of the outer wall of the film feeding chamber.

[0009] As a further description of the above technical solution:

[0010] A third camera is installed at one end of the film discharging chamber, a fourth camera is installed at the other end of the film discharging chamber, and a second translation station is installed on the other side of the outer wall of the film discharging chamber.

[0011] As a further description of the above technical solution:

[0012] A rough pumping unit is installed on one side of the outer wall of the first translation station, an electric cabinet is installed on the other side of the outer wall of the second translation station, and the front end of the other outer wall of the first translation station is movably connected to one side of the outer wall of the loading and unloading station.

[0013] As a further description of the above technical solution:

[0014] A base is fixedly connected to the front end of the loading and unloading station, electric lifting columns penetrate through both ends of the base, a standing plate is fixedly connected to the top ends of the electric lifting columns, the front end of one side of the outer wall of the second translation station is movably connected to the other side of the outer wall of the return rack, and the opposite surfaces of the loading and unloading station and the return rack are movably connected.

[0015] As a further description of the above technical solution:

[0016] A groove is opened at one end of the bottom of the table body, clamping grooves are opened at both ends of the groove, a backing plate is fixedly connected to the front end of the coating chamber, L-shaped clamping blocks are fixedly connected to both sides of the front end of the backing plate, and the top ends of the outer walls of the L-shaped clamping blocks are clamped with the inner walls of the clamping grooves.

[0017] As a further description of the above technical solution:

[0018] The bottom of the coating chamber is fixedly connected with a bottom plate, multiple load-bearing plates are fixedly connected to the bottom of the bottom plate, threaded rods are fixedly connected to both ends of the load-bearing plates, roller plates are sleeved on the top ends of the outer walls of the threaded rods, nuts are threadedly connected to the bottom ends of the outer walls of the threaded rods, and universal wheels are fixedly connected to the centers of the bottoms of the roller plates.

[0019] Compared with the prior art, the beneficial effects of the present utility model are:

[0020] (1) This coating device uses the process method and principle of nano-level layered deposition and zoning crystallization to produce a coating equipment with nano-level layered deposition and zoning crystallization, solving the performance problems such as insufficient crystallization degree of ITO deposited on various substrates such as plastics, PCBs, display or semiconductor devices at low temperatures, low transmittance, and poor uniformity.

[0021] (2) By setting universal wheels, the movement of the entire coating chamber can be made more convenient, which helps to reduce the workload of the staff. Through the simple connection method between the threaded rod, roller plate and nut, the disassembly and assembly steps of the universal wheels are made more convenient and fast. At the same time, it is also convenient to replace the damaged universal wheels. The staff can stand on the standing plate and operate the work content on the loading and unloading station. By setting the electric lifting column, it can drive the standing plate to move up and down together, so as to conveniently adjust the standing height of the staff and meet the needs of staff with different heights. Brief Description of the Drawings

[0022] Figure 1 is a schematic structural diagram of the present utility model;

[0023] Figure 2 is a top view of the present utility model;

[0024] Figure 3 is a bottom view of the present utility model;

[0025] Figure 4 is a mechanical diagram of the ITO layered deposition and zoning crystallization process of the present utility model;

[0026] Figure 5 is a schematic diagram of the crystallization (atmosphere isolation) principle after ITO zoning deposition of the present utility model.

[0027] The corresponding relationship between the reference numerals and component names in the drawings is as follows:

[0028] 1, table body; 2, manipulator; 3, first camera; 4, loading chamber; 5, second camera; 6, first translation station; 7, third camera; 8, unloading chamber; 9, fourth camera; 10, second translation station; 11, rough pumping pump group; 12, electric cabinet; 13, loading and unloading station; 14, base; 15, electric lifting column; 16, standing plate; 17, reflux rack; 18, substrate holder; 19, substrate fixture; 20, groove; 21, card slot; 22, coating chamber; 23, backing plate; 24, L-shaped clamping block; 25, rotating drum; 26, ITO cathode; 27, ICP ion source; 28, molecular pump; 29, bottom plate; 30, load-bearing plate; 31, threaded rod; 32, roller plate; 33, nut; 34, universal wheel. Detailed Embodiment

[0029] In order to make the above objects, features and advantages of the present utility model more obvious and understandable, the following detailed description of the specific embodiments of the present utility model will be made in conjunction with the accompanying drawings of the specification.

[0030] In the following description, many specific details are set forth in order to fully understand the present utility model. However, the present utility model may also be implemented in other ways different from those described herein. Those skilled in the art can make similar generalizations without departing from the connotation of the present utility model. Therefore, the present utility model is not limited by the specific embodiments disclosed below.

[0031] Secondly, the so-called "one embodiment" or "embodiment" herein refers to a specific feature, structure or characteristic that may be included in at least one implementation manner of the present utility model. The phrase "in one embodiment" appearing in different places in this specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment that is mutually exclusive with other embodiments. The present utility model provides the following embodiments.

[0032] Referring to Figures 1-5 , an embodiment provided by the present utility model: a nano-level layered deposition ITO film coating device, including a table body 1, a manipulator 2 is installed on the top of the table body 1, a film inlet chamber 4 is installed on one outer wall of the table body 1, a first camera 3 is installed at one end of the film inlet chamber 4, a second camera 5 is installed at the other end of the film inlet chamber 4, a first translation station 6 is installed on one outer wall side of the film inlet chamber 4, a film outlet chamber 8 is installed on the other outer wall of the table body 1, a third camera 7 is installed at one end of the film outlet chamber 8, a fourth camera 9 is installed at the other end of the film outlet chamber 8, a second translation station 10 is installed on the other outer wall side of the film outlet chamber 8, a rough pumping pump group 11 is installed on one outer wall side of the first translation station 6. By setting the rough pumping pump group 11, it is mainly used to exhaust air to obtain a rough vacuum. An electrical cabinet 12 is installed on the other outer wall side of the second translation station 10. By setting the electrical cabinet 12, it is mainly used for the control and power distribution of the equipment. A loading and unloading station 13 is installed at the front end of the other outer wall of the first translation station 6. A base 14 is fixedly connected to the front end of the loading and unloading station 13. Electrically driven lifting columns 15 penetrate through both ends of the base 14. The top ends of the electrically driven lifting columns 15 are fixedly connected to a standing plate 16. A staff member can stand on the standing plate 16 to operate the work content on the loading and unloading station 13. By setting the electrically driven lifting columns 15, the standing plate 16 can be driven to move up and down together, so as to conveniently adjust the standing height of the staff member and meet the needs of staff members of different heights.

[0033] On the front end of the outer wall on one side of the second translation station 10, a return rack 17 is installed. The loading and unloading station 13 is movably connected to the opposite surface of the return rack 17. Removable substrate holders 18 are installed at the tops of both the loading and unloading station 13 and the return rack 17. By providing the return rack 17, it is mainly used for the substrate holder 18 to flow back from the unloading position to the loading and unloading station 13. Substrate fixtures 19 are installed in each of the substrate holders 18. By providing the substrate holder 18, the substrate fixture 19 can be loaded, and it can operate in a cycle in both atmospheric and vacuum environments. By providing the loading and unloading station 13, it is used to load and unload the coated substrate and carry and transfer the substrate holder 18. By providing the first translation station 6 and the second translation station 10, they are mainly used to carry and move the substrate holder 18 horizontally for translation, connecting the transfer between the vacuum and atmospheric parts. At one end of the bottom of the table body 1, a groove 20 is opened, and clamping grooves 21 are opened at both ends of the groove 20. A coating chamber 22 is installed at the rear end of the table body 1. By providing the wafer loading chamber 4, a vacuum-to-atmosphere transition is achieved between the coating chamber 22 and the first translation station 6. The wafer loading chamber 4 breaks the vacuum to the atmospheric state, and then the substrate holder 18 is carried in. A rough vacuum state is obtained by using the rough pumping unit 11. By providing the wafer unloading chamber 8, a vacuum-to-atmosphere transition is achieved between the coating chamber 22 and the second translation station 10. The wafer unloading chamber 8 breaks the vacuum, and then the substrate holder 18 is carried out. After the substrate holder 18 is carried out, the rough pumping unit 11 is used to transition the atmospheric state to the vacuum state. The front end of the coating chamber 22 is fixedly connected with a backing plate 23. The bottom surface of the backing plate 23 and the bottom surface of the coating chamber 22 are both on the same horizontal plane. On both sides of the front end of the backing plate 23, L-shaped clamping blocks 24 are fixedly connected. The outer wall tops of the L-shaped clamping blocks 24 are clamped with the inner walls of the clamping grooves 21. By providing the connection structure between the L-shaped clamping blocks 24 and the clamping grooves 21, the coating chamber 22 and the table body 1 can be fixed together, thereby preventing the distance between the coating chamber 22 and the table body 1 from increasing, and improving the stability during the operation of the manipulator 2. By providing the simple connection method between the L-shaped clamping blocks 24 and the clamping grooves 21, the disassembly and assembly steps of the coating chamber 22 are made more convenient and rapid.

[0034] At the center of the top of the coating chamber 22, a rotating drum 25 is rotatably connected. By setting the rotating drum 25, it can carry the coating substrate and support high-speed rotation, with a rotation speed of up to 1 - 100 RPM. The rotation rate of the drum is related not only to the film thickness of the ITO film deposited in layers but also to the efficiency of post-crystallization and the degree of film crystallization. The rotating drum 25 is designed to match the coating chamber 22 to ensure that the coating atmosphere is controllable. The distribution of the coating atmosphere is related to the quality of the ITO film deposited in layers. By setting the manipulator 2, it is used to vacuum-displace the substrate fixture 19 between the substrate holder 18 and the rotating drum 25. At both ends of the top of the coating chamber 22, ITO cathodes 26 are fixedly connected. By setting the ITO cathodes 26, it is a complete coating system, equipped with a DC arc-extinguishing power supply and an intake system for precisely controlling the flow rates of argon and oxygen required for coating. It is worth mentioning that the key technology of the ITO cathode 26 is the required magnetic circuit to support the deposition of high-quality ITO thin films, with characteristics such as high-concentration plasma discharge and low-scattering sputtering, including but not limited to planar ITO cathodes 26 and rotating ITO cathodes 26. At the rear end of the coating chamber 22, an ICP ion source 27 is fixedly connected. By setting the ICP ion source 27, it is a key component for post-crystallization, providing the energy and crystallization atmosphere required for post-crystallization of the ITO thin layer. A power supply with a power of more than 5 kW needs to be configured to ensure high-density radio-frequency plasma and improve the cost performance of the equipment. The radio-frequency boundary protection design of the high-power ICP ion source 27 is the core part of the technology to ensure no adverse problems such as radio-frequency spillage, and a crystallization atmosphere with precise control of argon (Ar) and oxygen (O2) needs to be configured.

[0035] Molecular pumps 28 are installed at both ends of the rotating drum 25 and on the other two sides of the coating chamber 22. By setting the coating chamber 22, it is configured with a rotating drum 25 to load the coating substrate and support high-speed rotation, an ITO cathode 26 to deposit the ITO film layer, a molecular pump 28 to obtain the high-vacuum background required for coating, and a high-power ICP ion source 27 to provide the energy required for post-crystallization of the ITO thin layer. By setting the molecular pump 28, it is mainly used for the equipment to obtain a high-vacuum coating background. At the bottom of the coating chamber 22, a bottom plate 29 is fixedly connected. At the bottom of the bottom plate 29, multiple load-bearing plates 30 are fixedly connected. At both ends of the load-bearing plate 30, threaded rods 31 are fixedly connected. At the top of the outer wall of the threaded rod 31, a roller plate 32 is sleeved. At both ends of the roller plate 32, through holes penetrating up and down are opened. The outer walls of the threaded rods 31 vertically penetrate downward through the through holes at both ends of the roller plate 32 and extend out. The extended ends of the threaded rods 31 are threadedly connected with nuts 33. At the center of the bottom of the roller plate 32, universal wheels 34 are fixedly connected. By setting the universal wheels 34, the movement of the entire coating chamber 22 can be made more convenient, which helps to reduce the work burden of the staff. By setting the simple connection method among the threaded rod 31, the roller plate 32, and the nut 33, the disassembly and assembly steps of the universal wheel 34 are made more convenient and fast, and at the same time, it is also convenient to replace the damaged universal wheel 34.

[0036] As Figure 5 shown, the output end of the ICP ion source 27 is set as the crystallization zone. A molecular pump 28 is installed on one side of the outer wall of the ICP ion source 27. The bottom end of the molecular pump 28 is provided with an isolation exhaust cavity, and a cavity current limiting mechanism is installed inside the isolation exhaust cavity. The output end of the ITO cathode 26 is set as the deposition zone. A drum current limiting mechanism is installed on the outer wall of the rotating drum 25.

[0037] Before use, the coated substrate needs to be precisely cleaned so that the water contact angle of the cleaned substrate is less than 5°. Subsequently, the substrate is loaded onto the coated substrate fixture 19 in a clean room. Then, the substrate fixture 19 loaded with the substrate to be coated is loaded onto the substrate holder 18. The inlet chamber 4 is evacuated to atmospheric pressure, and the second camera 5 is turned on. The substrate holder 18 carrying the substrate to be coated is moved into the inlet chamber 4 through the first translation station 6. After the coated substrate enters the vacuum chamber, the second camera 5 is turned off. The inlet chamber 4 is evacuated from atmospheric pressure to below 1 - 26.7 Pa. After the rough vacuum pumping is completed, the vacuum valve is opened, and the substrate holder 18 carrying the substrate to be coated enters the coating chamber 22 and is positioned. The first camera 3 is turned off. The manipulator 2 removes the substrate fixture 19 loaded with the substrate to be coated from the substrate holder 18 and installs it at the corresponding position on the rotating drum 25. After the rotating drum 25 is shifted and switched, the manipulator 2 removes the substrate fixture 19 loaded with the coated substrate and installs it on the substrate holder 18. The substrate holder 18 carrying the substrate fixture 19 of the coated substrate breaks the vacuum and enters the atmospheric environment through the outlet chamber 8. Such cyclic loading and unloading are carried out until all the coated substrates are replaced. After the substrate loading and unloading are completed, the first camera 3 and the third camera 7 are turned off, and the rotating drum 25 starts to rotate. The coating chamber 22 is evacuated to a high vacuum of below 5×10⁻³ Pa - 5×10⁻⁴ Pa, and plasma cleaning is started using the ICP ion source 27. There are differences between the ITO deposition atmosphere and the crystallization atmosphere, and a vacuum atmosphere partition is required. The atmosphere partition is achieved through the exhaust of the molecular pump 28 and the specific structures of the cathode gas distribution and the ion source gas distribution. After the substrate pretreatment is completed, the coating chamber 22 is evacuated to a high vacuum of 5×10⁻⁴ Pa - 1.0×10⁻⁴ Pa. After the high vacuum pumping is completed, cathode gas distribution for coating can be carried out. The gases for gas distribution include argon, oxygen, hydrogen, etc. The ITO film is deposited in the front area of the cathode. The thickness of the layered deposited ITO film is related to the crystallization ability of the equipment, generally controlled between 8 - 25 Å, the input power is between 2 - 10 kW, and the rotation speed of the rotating drum 25 is 60 - 120 RPM. The layered deposited ITO nanoscale thin layer obtains energy through the ICP high-energy plasma region by the rotation of the rotating drum 25 for post-crystallization. The ITO crystallization atmosphere mainly includes argon and oxygen, etc. The ion source uses a 13.56 MHz RF radio frequency power supply, and the input power is between 3 - 10 kW. In order to obtain a film quality with a higher degree of crystallization, after the total film layer deposition is completed, the cathode power supply is turned off, but the ICP power supply remains on, and the ICP high-energy plasma is used to continue passivating the film layer to improve the quality of the ITO film layer. After the above process is completed, the manipulator 2 unloads the coated substrate onto the substrate holder 18. After the substrate holder 18 carrying the coated substrate enters the outlet chamber 8, it is evacuated to atmospheric pressure. After the vacuum break is completed, the fourth camera 9 is turned on. The substrate holder 18 carries the coated substrate to the loading and unloading station 13 for manual replacement of the coating fixture or substrate operation. At this time, the coating work is completed.

[0038] The above content further elaborates on the present utility model in combination with specific embodiments. It cannot be determined that the specific implementation of the present utility model is only limited to these descriptions. For those of ordinary skill in the technical field to which the present utility model pertains, without departing from the concept of the present utility model, several simple deductions or substitutions can still be made, and all should be regarded as falling within the protection scope determined by the claims submitted for the present utility model.

Claims

1. A nano-scale layered deposition ITO film coating device, comprising a platform (1), characterized in that: A manipulator (2) is installed on the top of the platform (1), a film feed chamber (4) is installed on the outer wall of one side of the platform (1), a film discharge chamber (8) is installed on the outer wall of the other side of the platform (1), a loading and unloading station (13) is installed in front of the film feed chamber (4), a reflow rack (17) is installed in front of the film discharge chamber (8), a detachable substrate rack (18) is installed on the top of the loading and unloading station (13) and the reflow rack (17), a substrate fixture (19) is installed in the substrate rack (18), a coating chamber (22) is installed at the rear end of the platform (1), a rotating drum (25) is rotatably connected at the center of the top of the coating chamber (22), an ITO cathode (26) is fixedly connected at both ends of the top of the coating chamber (22), an ICP ion source (27) is fixedly connected at the rear end of the coating chamber (22), and molecular pumps (28) are installed at both ends of the rotating drum (25) and the other two sides of the coating chamber (22).

2. The ITO film coating device of nano-scale layered deposition according to claim 1, characterized in that: A first camera (3) is installed at one end of the film feed chamber (4), a second camera (5) is installed at the other end of the film feed chamber (4), and a first translation station (6) is installed on one side of the outer wall of the film feed chamber (4).

3. The ITO film coating device of nano-scale layered deposition according to claim 2, characterized in that: A third camera (7) is installed at one end of the film discharge chamber (8), a fourth camera (9) is installed at the other end of the film discharge chamber (8), and a second translation station (10) is installed on the other side of the outer wall of the film discharge chamber (8).

4. The ITO film coating device of nano-scale layered deposition according to claim 3, characterized in that: A roughing pump assembly (11) is installed on one side of an outer wall of the first translation station (6), an electric cabinet (12) is installed on the other side of an outer wall of the second translation station (10), and a front end of the other side outer wall of the first translation station (6) is movably connected to one side outer wall of the loading and unloading station (13).

5. The ITO film coating device of nano-scale layered deposition according to claim 3, characterized in that: The front end of the loading and unloading station (13) is fixedly connected to a base (14), both ends of the base (14) are penetrated by electric lifting columns (15), the top of the electric lifting columns (15) is fixedly connected to a standing plate (16), the front end of one side outer wall of the second translation station (10) is movably connected to the other side outer wall of the return rack (17), and the loading and unloading station (13) is movably connected to the opposite surface of the return rack (17).

6. The ITO film coating device of nano-scale layered deposition according to claim 1, characterized in that: A groove (20) is provided at one end of the bottom of the platform (1), and clamping grooves (21) are provided at both ends of the groove (20). A pad (23) is fixedly connected to the front end of the coating chamber (22), and L-shaped clamping blocks (24) are fixedly connected to both sides of the front end of the pad (23), and the top of the outer wall of the L-shaped clamping block (24) is clamped to the inner wall of the clamping groove (21).

7. The ITO film coating device of nano-scale layered deposition according to claim 1, characterized in that: The bottom of the coating chamber (22) is fixedly connected to a base plate (29), and the bottom of the base plate (29) is fixedly connected to a plurality of load-bearing plates (30), both ends of the load-bearing plates (30) are fixedly connected to threaded rods (31), the top ends of the outer walls of the threaded rods (31) are sleeved with roller plates (32), the bottom ends of the outer walls of the threaded rods (31) are threadedly connected to nuts (33), and the center of the bottom of the roller plates (32) are fixedly connected to universal wheels (34).

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