Sensor
By introducing a heat dissipation structure of semiconductor refrigerators and phase change material layers into the infrared detector, the problem of shortening the chip life in high-temperature environments is solved, and the stable operation and life of the sensor in high-temperature environments is achieved.
Patent Information
- Application Number
- CN202421446449.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-24
- Publication Date
- 2025-07-01
- Estimated Expiration
- 2034-06-24
AI Technical Summary
When infrared detectors are used in high temperature environments, heat accumulation affects the chip life, resulting in limited service life.
The heat dissipation structure combined with a semiconductor refrigerator and a phase change material layer is adopted to reduce the chip temperature through the semiconductor refrigerator. The phase change material layer adjusts the chip ambient temperature when the temperature changes to ensure that the chip is in the optimal working state.
Effectively control the temperature of the sensor chip, extend the service life of the chip, and ensure the stable operation of the infrared detector in a high-temperature environment.
Smart Images
Figure CN223050666U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the technical field of sensors, and more particularly, to a sensor. Background Art
[0002] Low-noise processing of weak signals of a photoconductive detector includes signal detection, identification, and amplification. To ensure the stable and reliable operation of the device, closed-loop control of its ambient temperature and operating power supply is required. Infrared detectors have a wide range of applications in many fields such as military and civilian.
[0003] Infrared detection technology has good environmental adaptability, better working ability at night and in bad weather conditions, and better ability to identify camouflaged targets than visible light. It has good concealment and is not easily interfered. The infrared system is small in size, light in weight, and low in power consumption.
[0004] When infrared radiation irradiates on the surface of certain semiconductor materials, some electrons and holes in the semiconductor material can change from the original non-conductive bound state to the conductive free state under the action of photon energy, increasing the conductivity of the semiconductor. This phenomenon is called the photoconductive phenomenon. A detector made using the photoconductive phenomenon is called a photoconductive detector.
[0005] Due to the high intensity and high penetrability of mid-infrared rays, it has the most extensive applications and the most mature technology. Especially in specific gas detection, forest fire prevention, fire safety, etc., it has increasingly extensive applications. Summary of the Utility Model
[0006] However, although infrared detectors have excellent performance, when used at a relatively high temperature (such as above 40 °C), since there is a chip inside the housing of the infrared detector, the chip generates heat due to the photoelectric effect during operation, and the inside of the housing of the infrared detector is sealed, making it difficult for the heat to dissipate outside the housing. The accumulation of heat will affect the service life of the chip.
[0007] This application proposes a sensor, aiming to solve the technical problem that the service life of the chip inside the infrared detector is limited when used in a specific environment.
[0008] The content part of this application is used to briefly introduce the concepts, which will be described in detail in the following specific implementation part. The content part of this application is not intended to identify the key features or essential features of the claimed technical solution, nor is it intended to limit the scope of the claimed technical solution.
[0009] Some embodiments of the present application propose a sensor, including: a housing, a detection chip, a circuit board, pins, a heat dissipation bracket, a heat insulation pad, and a semiconductor cooler; wherein, the housing is provided with an inner space; the detection chip is arranged in the inner space of the housing; the circuit board is arranged in the inner space of the housing and is electrically connected to the detection chip; the pins are electrically connected to the circuit board; the heat dissipation bracket is arranged at one end of the housing; the heat insulation pad includes a pad body and a pad middle hole formed in the pad body; the semiconductor cooler is arranged in the pad middle hole; the pins pass through the heat dissipation bracket from the end of the housing close to the heat dissipation bracket and are connected to the circuit board; the pad body is arranged between the heat dissipation bracket and the housing; the detection chip is arranged in the pad middle hole; the semiconductor cooler is located between the detection chip and the heat dissipation bracket.
[0010] Further, the semiconductor cooler includes: a lens barrel and a phase change material layer; wherein, the lens barrel is arranged in the inner space to form an annular space with the housing; the phase change material layer is arranged in the annular space; the phase change material layer is located between the detection chip and the heat dissipation bracket.
[0011] Further, the semiconductor cooler further includes: a bottom layer colloid; wherein, the bottom layer colloid is arranged in the annular space; the bottom layer colloid is arranged between the phase change material layer and the heat dissipation bracket.
[0012] Further, the semiconductor cooler further includes: a top layer colloid; wherein, the top layer colloid is arranged in the annular space; the top layer colloid is arranged between the phase change material layer and the detection chip; the bottom layer colloid, the phase change material layer, and the top layer colloid are sequentially filled between the housing and the lens barrel to seal the space between the housing and the lens barrel.
[0013] Further, the detection chip is located within the projection range of the lens barrel.
[0014] Further, the sensor further includes: an optical component; wherein, the optical component is arranged at the end of the housing away from the heat dissipation bracket; the optical component at least partially exposes the inner space.
[0015] Further, the circuit board is located between the optical component and the detection chip; the circuit board is provided with a perforation; the projections of the optical component and the detection chip at least partially overlap and are located within the perforation.
[0016] Further, the pad body is further formed with a pad edge hole for the pins to pass through.
[0017] Further, the pad body is provided with a sandwich space; the sandwich space is hollow.
[0018] Further, a phase change material block is arranged in the sandwich space.
[0019] The beneficial effect of the present application is: to provide a sensor that can ensure the sensor chip is in the best working state by controlling its temperature. Description of the Drawings
[0020] The accompanying drawings, which form a part of this application, are used to provide a further understanding of this application, making other features, objectives, and advantages of this application more obvious. The schematic drawings of exemplary embodiments of this application and their descriptions are used to explain this application and do not constitute an improper limitation of this application.
[0021] In addition, throughout the drawings, the same or similar reference numerals denote the same or similar elements. It should be understood that the drawings are schematic and the elements and components are not necessarily drawn to scale.
[0022] In the drawings:
[0023] Figure 1 is a schematic block diagram of the circuit structure of a sensor according to an embodiment of this application;
[0024] Figure 2 is a three-dimensional structure schematic diagram of the entity of a sensor according to an embodiment of this application;
[0025] Figure 3 is Figure 2 an exploded structure schematic diagram of the sensor shown;
[0026] Figure 4 is Figure 2 a structure schematic diagram of the sensor shown as viewed from the first side;
[0027] Figure 5 is Figure 4 a sectional structure schematic diagram of the section shown;
[0028] Figure 6 is Figure 2 a structure schematic diagram of the sensor shown as viewed from the second side;
[0029] Figure 7 is Figure 6 a sectional structure schematic diagram of the section shown;
[0030] Figure 8 is a schematic diagram of the potting structure according to an embodiment of this application;
[0031] Figure 9 is Figure 8 a sectional structure schematic diagram of the structure shown;
[0032] Figure 10 is Figure 8 a structure schematic diagram of the structure shown after installing an optical component;
[0033] Figure 11 is a schematic diagram of the structure of a heat insulation pad according to an embodiment of this application;
[0034] Figure 12 isFigure 11 Schematic cross-sectional structure diagram shown
[0035] Figure 13 is Figure 11 Schematic cross-sectional structure diagram of an extended solution of the solution shown
[0036] The meanings of the reference numerals in the figure are as follows
[0037] 100, sensor; 101, housing; 102, optical component; 103, semiconductor cooler; 104, detection chip; 105, circuit board; 106, first chip; 107, second chip; 108, heat insulation pad; 108a, pad body; 108b, pad middle hole; 108c, pad edge hole; 108d, sandwich space; 109, heat dissipation bracket; 109a, mounting hole; 110, pin; 111, bottom layer colloid; 112, phase change material layer; 113, top layer colloid; 114, through cavity; 115, lens barrel; 116, phase change material block Specific embodiments
[0038] Embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although some embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. On the contrary, these embodiments are provided to more thoroughly and completely understand the present disclosure. It should be understood that the accompanying drawings and embodiments of the present disclosure are only for exemplary purposes and are not used to limit the protection scope of the present disclosure
[0039] In addition, it should be noted that for the sake of convenience of description, only parts related to the relevant invention are shown in the drawings. Without conflict, the embodiments in the present disclosure and the features in the embodiments can be combined with each other
[0040] It should be noted that the concepts such as "first" and "second" mentioned in the present disclosure are only used to distinguish different devices, modules or units, and are not used to limit the order or interdependence relationship of the functions performed by these devices, modules or units
[0041] It should be noted that the modifications of "one" and "multiple" mentioned in the present disclosure are illustrative rather than restrictive. Those skilled in the art should understand that unless otherwise clearly specified in the context, it should be understood as "one or more"
[0042] The names of the messages or information exchanged between multiple devices in the embodiments of the present disclosure are only for illustrative purposes and are not used to limit the scope of these messages or information
[0043] The present disclosure will be described in detail below with reference to the drawings and in conjunction with the embodiments
[0044] Reference Figure 1 As shown, the sensor of the present application includes: a detection chip, a chip operating temperature control module, a lock-in amplifier module, a power supply control module, and a single-chip microcomputer.
[0045] Among them, the detection chip is used to generate an electrical signal according to the input of the detected quantity; the chip operating temperature control module is used to control the temperature of the detection chip; the lock-in amplifier module is used to modulate the electrical signal of the detection chip; the power supply control module is used to supply power to at least the detection chip; the single-chip microcomputer is used to receive and process the electrical signals from the detection chip, the chip operating temperature control module, or / and the lock-in amplifier module.
[0046] Among them, the detection chip is electrically connected to the lock-in amplifier module and the power supply control module respectively; the chip operating temperature control module is electrically connected to the single-chip microcomputer; the lock-in amplifier module is electrically connected to the single-chip microcomputer; the power supply control module is electrically connected to the single-chip microcomputer.
[0047] Specifically, the detection chip is a photoconductive chip or / and a magnetoconductive chip made of indium antimonide material.
[0048] Specifically, the chip operating temperature control module includes: a chip temperature sensor, a semiconductor refrigerator, a thermal finger drive control module, a reference temperature module, and an ambient temperature sensor.
[0049] Among them, the chip temperature sensor is used to detect the temperature of the detection chip. The semiconductor refrigerator is used to reduce the temperature of the detection chip. The thermal finger drive control module is used to drive and control the semiconductor refrigerator; the semiconductor refrigerator module is electrically connected to the single-chip microcomputer.
[0050] The ambient temperature sensor is used to detect the ambient temperature; the reference temperature module is used to feedback the ambient temperature detected by the ambient temperature sensor to the single-chip microcomputer; among them, the ambient temperature sensor is electrically connected to the reference temperature module, and the reference temperature module is electrically connected to the single-chip microcomputer.
[0051] Specifically, the lock-in amplifier module includes: a multiplier, a phase shifter, a low-pass filter, and a reference signal generator; among them, the multiplier is electrically connected to the phase shifter and the low-pass filter respectively, and the reference signal generator is electrically connected to the phase shifter and the single-chip microcomputer respectively.
[0052] Specifically, the phase shifter is a 90-degree phase shifter.
[0053] Specifically, the sensor includes: a preamplifier module, which is used to pre-amplify the electrical signal of the detection chip; a narrowband amplifier, which is used to realize the narrowband noise signal in the electrical signal of the detection chip;
[0054] The preamplifier module and the narrowband amplifier are sequentially arranged between the detection chip and the lock-in amplifier module.
[0055] Specifically, the pre - amplifier module is electrically connected to the detection chip, and the narrow - band amplifier is electrically connected to the multiplier.
[0056] Specifically, the detected quantity of the detection chip is the intensity of infrared light.
[0057] Specifically, the detected quantity of the detection chip is the intensity of the magnetic field.
[0058] As a more specific solution, taking the sensor being configured as an infrared detection sensor as an example, the implementation methods of various aspects of this application will be introduced in detail below.
[0059] 1. Detection chip
[0060] Infrared detection technology can be adopted. It has good environmental adaptability, better working ability at night and in bad weather, and better ability to identify camouflaged targets than visible light. It has good concealment and is not easily interfered. The infrared system is small in size, light in weight, and low in power consumption.
[0061] When infrared radiation irradiates on the surface of some semiconductor materials, some electrons and holes in the semiconductor material can change from the original non - conductive bound state to the conductive free state under the action of photon energy, increasing the conductivity of the semiconductor. This phenomenon is called the photoconductive effect.
[0062] The detector made by using the photoconductive effect is called a photoconductive detector. The detection chip of the photoconductive detector made of indium antimonide (InSb) material is sensitive to mid - infrared light with wavelengths from 2.5um to 25um.
[0063] Due to the high intensity and high penetrability of mid - infrared rays, it has the most extensive applications and the most mature technology. It has increasingly wide applications especially in specific gas detection, forest fire prevention, fire safety, etc.
[0064] 2. Signal processing
[0065] The modulated infrared signal is input into the optical component. Through its optical focusing, it is projected onto the surface of the infrared detector chip. The electrical signal output by the chip is input into the pre - amplifier and narrow - band low - noise amplifier for amplification. The signal output by the pre - amplifier is input into the lock - in amplifier. The amplifier circuit is powered by an ultra - low - noise power supply.
[0066] The infrared signal amplification processing uses a lock - in amplifier.
[0067] The input modulation signal and the reference signal have the same frequency and a phase difference of 90 degrees. When the input modulation signal and the reference signal are multiplied and filtered, a DC component will be obtained, and this DC component is only proportional to the amplitude of the modulation signal. The lock-in amplifier can separate the signal and filter out most of the unwanted noise in the system. Even if the relatively weak modulation signal is submerged in the noise signal, and even if the noise signal is much larger than the useful signal, as long as the frequency of the modulated infrared signal is known, the amplitude of this infrared detector signal can be accurately detected. The lock-in amplifier has a wide range of applications in the amplification and detection of weak signals.
[0068] 3. Refrigeration
[0069] To ensure that the detector chip can have high-speed response and high sensitivity in the wavelength band up to 6.5 μm, it is necessary to control the refrigeration of the detector chip.
[0070] A thermoelectric cooler, also known as a semiconductor cooler, commonly known as a heat finger, is used. It utilizes the Peltier effect of semiconductors, that is, when a closed loop is composed of two different metals or semiconductors and a direct current is passed through, it causes one of the two contacts of the material to become cold and the other to become hot. A multi-stage semiconductor PN junction thermoelectric cooler is formed and is usually used in infrared and cryogenic electronics technology. It has the advantages of small volume and light weight.
[0071] As an optimal solution, a phase change material is encapsulated at the detector chip. This phase change material will absorb heat through phase change at a set temperature, thus ensuring the temperature environment of the detector chip. When the semiconductor cooler has not yet taken effect, it realizes the adjustment and reduction of the temperature. At the same time, the sudden temperature change brought about by the phase change also provides a calibrated temperature reference for the detector chip.
[0072] 4. Power Supply
[0073] The module includes a reference voltage VREF module, a power supply module, and a control module. For the infrared optoelectronic chip, the output signal noise and sensitivity are closely related to its bias voltage at different ambient temperatures. It must be continuously adjusted in real time to ensure that it works in the best state.
[0074] 5. Single-chip Microcomputer Control
[0075] Generate and provide the sine reference signal required for the operation of the lock-in amplifier.
[0076] Measure the externally connected resistive temperature sensor using the principle of an RC oscillator. Provide the reference temperature of the system.
[0077] Generate and provide the drive pulse for the refrigeration control of the chip. Detect the working temperature of the chip in real time and form a closed-loop control with the change of the refrigeration drive pulse.
[0078] Generate and provide a bias voltage control signal for the chip operation. Control the change of the bias voltage according to the requirements of the chip operation state.
[0079] Optionally, the detection chip can be configured as a magnetic field detection chip. Except for the different detection parameters, the remaining structures can refer to the above embodiments.
[0080] Based on the above, the sensor of the present application is equivalent to including two main parts: a detection chip and a conditioning chip. Among them, the detection chip is at least made of a sensitive source material (or called a sensitive material), such as indium antimonide, etc.; the conditioning chip is used to modulate the detection quantity input to the detection chip and / or the working environment parameters of the detection chip; among them, the detection quantity input to the detection chip modulated by the conditioning chip includes infrared reference intensity and / or magnetic field reference intensity; the working environment parameters of the detection chip modulated by the conditioning chip include the ambient temperature of the detection chip and / or the bias voltage applied to the detection chip.
[0081] Refer to Figures 2 to Figure 7 As shown, the sensor 100 of the present application includes: a housing 101, an optical component 102, a semiconductor cooler 103, a detection chip 104, a circuit board 105, a first chip 106, a second chip 107, a heat insulation pad 108, a heat dissipation bracket 109, and a plurality of pins 110.
[0082] Among them, the housing 101 is provided with an inner space, and the semiconductor cooler 103, the detection chip 104, the circuit board 105, the first chip 106, and the second chip 107 are arranged in the inner space of the housing 101.
[0083] The optical component 102 is arranged at one end of the housing 101. For example, the optical component 102 can be arranged at the top of the housing as shown in the appendix Figure 2 As shown, and at least partially exposed at the top of the housing 101.
[0084] For the convenience of describing the cooperation relationship of the various components in the sensor of the present application, unless otherwise specified, the "top" mentioned in the following text refers to the end of the housing 101 close to the optical component 102. It can be understood that the description of the "top" should be regarded as an example of the cooperation relationship of the various components in the sensor, rather than a limitation on the positions of the various components when the sensor is actually used.
[0085] As a preferred solution, the housing 101 is configured to have a cylindrical tube structure, and the optical component 102 can be fixed to the top of the housing 101 by potting (using a transparent, heat-conducting, and insulating colloid), and at the same time, other components inside the housing 101 are encapsulated.
[0086] As a preferred solution, the optical component 102 can be configured as an optical lens for collecting infrared light signals.
[0087] The heat dissipation bracket 109 is used to provide a mounting carrier for the entire sensor 100, and the pins 110 are used to realize the electrical connection between the entire sensor 100 and an external circuit board 105 or other lines.
[0088] The heat dissipation bracket 109 is configured as a thin sheet structure, and it is provided with two mounting holes 109a to facilitate the installation and fixation of the entire sensor 100.
[0089] The pins 110 penetrate through the heat dissipation bracket 109, with a part located on one side of the heat dissipation bracket 109 and the other part located on the other side of the heat dissipation bracket 109.
[0090] In order to achieve the heat insulation effect between the housing 101 and the heat dissipation bracket 109, as well as the heat insulation effect between the semiconductor cooler 103 and the detection chip 104 and the outside, the following solution is adopted in this application:
[0091] The heat insulation pad 108 is arranged between the housing 101 and the heat dissipation bracket 109 and spaces them apart, and the heat insulation pad 108 is configured as an annular structure. The semiconductor cooler 103 and the detection chip 104 are arranged in the space enclosed by the inner circle of the heat insulation pad 108. More specifically, the detection chip 104 is located between the circuit board 105 and the semiconductor cooler 103, that is, as shown in the attached drawing, the detection chip 104 is arranged on the top of the semiconductor cooler 103, so that the semiconductor cooler 103 can effectively cool the detection chip 104. The detection chip can be electrically connected to the circuit board to supply power to the detection chip through the circuit board.
[0092] The circuit board 105 is arranged above the heat insulation pad 108. In order to adapt to the heat insulation pad 108, the circuit board 105 is also configured as an annular structure. Specifically, the circuit board 105 is located between the optical component 102 and the detection chip 104, and the circuit board 105 is provided with a perforation. The projections of the optical component 102 and the detection chip 104 on the circuit board 105 at least partially overlap and are located within the perforation, so that the light projected by the optical component 102 can irradiate the detection chip 104. The first chip 106 and the second chip 107 are electrically connected to the circuit board 105, and the part of the pins 110 located inside the housing 101 is electrically connected below the circuit board 105.
[0093] As a preferred solution, as Figure 8 shown, the first chip 106 and the second chip 107 can be the above-mentioned conditioning chips, or can be a single-chip microcomputer chip composed of the single-chip microcomputer or other corresponding modules of this application. The printed circuit for realizing the above circuit architecture is printed on the circuit board 105. Of course, other required electrical components can also be electrically connected to the circuit board 105.
[0094] As Figures 8 to 10As shown, as a preferred solution, in order to set the phase change material, a multi-layer solution can be adopted during potting. Specifically, first, a lens barrel 115 can be positioned inside the housing 101, so that an annular space is formed between the lens barrel 115 and the housing 101. As a preferred solution, the detection chip 104 is located within the projection range of the lens barrel 115. Then, potting is first performed on the annular space between the lens barrel 115 and the housing 101 once, and the colloid formed by this potting is defined as the bottom layer colloid 111. Due to the shape constraint of the housing 101, the bottom layer colloid 111 is generally in a ring structure. Then, the phase change material is filled into the annular space between the lens barrel 115 and the housing 101 to form a phase change material layer 112; then, potting is performed on the annular space between the lens barrel 115 and the housing 101 again to form a top layer colloid 113.
[0095] The bottom layer colloid 111 and the top layer colloid 113 sandwich the phase change material layer 112 therebetween, and due to the limitation of the lens barrel 115 and the housing 101, the phase change material in the phase change material layer 112 will not leak even during phase change.
[0096] That is, the sensor of the present application further includes: a bottom layer colloid 111, a phase change material layer 112, a top layer colloid 113, and a lens barrel 115.
[0097] The lens barrel 115 is disposed inside the housing 101, and the detection chip 104 is disposed inside the lens barrel 115; the bottom layer colloid 111, the phase change material layer 112, and the top layer colloid 113 are sequentially filled between the housing 101 and the lens barrel 115 to seal the space between the housing 101 and the lens barrel 115; the phase change material layer 112 is composed of a phase change material.
[0098] It can be understood that, on the basis of setting the semiconductor cooler 103, the bottom layer colloid 111, the phase change material layer 112, the top layer colloid 113, and the lens barrel 115 can be further set to dissipate heat from the detection chip 104. It is also possible to only set the semiconductor cooler 103 without setting the bottom layer colloid 111, the phase change material layer 112, the top layer colloid 113, and the lens barrel 115; or only set the bottom layer colloid 111, the phase change material layer 112, the top layer colloid 113, and the lens barrel 115 without setting the semiconductor cooler 103 to dissipate heat from the detection chip 104.
[0099] The optical component 102 is disposed at the end of the lens barrel 115 and fixedly connected thereto. For example, a convex block (not marked in the figure) for clamping the optical component 102 is formed inside the lens barrel 115.
[0100] In this way, when the temperature changes, the phase change material layer 112 can achieve temperature regulation through phase change, and the provided lens barrel 115 can be provided with a more complex combination of optical components 102.
[0101] Refer toFigures 11 to 13 As shown, the heat insulation pad 108 includes a pad body 108a, a pad middle hole 108b is formed at the center of the pad body 108a, and the detection chip 104 and the semiconductor refrigerator 103 can be arranged in the pad middle hole 108b.
[0102] In order to allow the pins 110 to pass through, the pad body 108a is further formed with a plurality of pad edge holes 108c for the pins 110 to pass through.
[0103] As a preferred solution, the pad body 108a is further provided with a plurality of sandwich spaces 108d, and the sandwich spaces 108d can be hollow, that is, vacuum or filled with air, so as to provide a good heat insulation effect.
[0104] As a further preferred solution, phase change material blocks 116 can be arranged in the sandwich spaces 108d, so as to adjust the temperature of the heat insulation pad 108 through the phase change material blocks 116, thereby adjusting the temperature field of the space surrounded by the pad middle hole 108b, ensuring the optimal working temperature of the detection chip 104 and improving the effect of the semiconductor refrigerator 103.
[0105] The top and bottom of the pad body 108a can be formed by a two-piece structure and then synthesized into a whole by hot melting or gluing after filling with the phase change material.
[0106] The above description is only some preferred embodiments of the present disclosure and an explanation of the applied technical principles. Those skilled in the art should understand that the scope of the invention involved in the embodiments of the present disclosure is not limited to the technical solutions formed by the specific combination of the above technical features, but should also cover other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the above inventive concept. For example, the technical solutions formed by mutually replacing the above features with the technical features (but not limited to) having similar functions disclosed in the embodiments of the present disclosure.
Claims
1. A sensor, comprising: An outer shell having an inner shell space; A detection chip is arranged in the inner space of the outer shell; A circuit board, disposed in the inner space of the housing and electrically connected to the detection chip; A pin electrically connected to the circuit board; Features: The sensor also includes: A heat dissipation bracket, arranged at one end of the housing; A heat-insulating pad, comprising a pad body and a pad hole formed in the pad body; A semiconductor refrigerator is disposed in the hole in the pad; Among them, the pin passes through the heat dissipation bracket from one end of the shell close to the heat dissipation bracket and is connected to the circuit board; the pad body is arranged between the heat dissipation bracket and the shell; the detection chip is arranged in the hole in the pad; and the semiconductor cooler is located between the detection chip and the heat dissipation bracket.
2. The sensor according to claim 1, characterized in that: The sensor also includes: A lens barrel is arranged in the inner space of the shell to form an annular space together with the outer shell; A phase change material layer is arranged in the annular space; Wherein, the phase change material layer is located between the housing and the heat dissipation support.
3. The sensor according to claim 2, characterized in that: The sensor also includes: A bottom colloid is arranged in the annular space; Wherein, the bottom colloid is arranged between the phase change material layer and the heat dissipation support.
4. The sensor according to claim 3, characterized in that: The sensor also includes: A top layer of colloid is disposed in the annular space; The top colloid is arranged between the phase change material layer and the detection chip; the bottom colloid, the phase change material layer and the top colloid are sequentially filled between the shell and the lens barrel to seal the space between the shell and the lens barrel.
5. The sensor according to claim 2, characterized in that: The detection chip is located within the projection range of the lens barrel.
6. The sensor according to any one of claims 1 to 5, characterized in that: The sensor also includes: An optical component is arranged at an end of the housing away from the heat dissipation support; Wherein, the optical component is at least partially exposed from the space inside the shell.
7. The sensor according to claim 6, characterized in that: The circuit board is located between the optical component and the detection chip; a through hole is formed through the circuit board; the projections of the optical component and the detection chip on the circuit board at least partially overlap and are located in the through hole.
8. The sensor according to claim 7, characterized in that: The pad body is also formed with pad edge holes for pins to pass through.
9. The sensor according to claim 1, characterized in that: The pad body is provided with an interlayer space; the interlayer space is hollow.
10. The sensor according to claim 9, characterized in that: A phase change material block is arranged in the interlayer space.