Vertical low-frequency resonant mode quartz thermosensitive resonator with shock-proof reinforced structure

By introducing a shock-resistant reinforcement structure into a vertical low-frequency resonant mode quartz thermal resonator, the problems of frequency changes and stability reduction under mechanical vibration and impact are solved, and a resonator design with high resolution, wide temperature zone, good stability and low cost are achieved.

CN223064718UActive Publication Date: 2025-07-04EAST UNIV OF HEILONGJIANG
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Patent Information

Application Number
CN202421490061.6
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-06-26
Publication Date
2025-07-04
Estimated Expiration
2034-06-26

AI Technical Summary

Technical Problem

The existing piezoelectric quartz thermal resonators have shortcomings in their resistance to mechanical vibration and mechanical shock, especially low-frequency mode vertical piezoelectric resonant type quartz thermal resonators are prone to frequency changes and stability reduction under mechanical shock and vibration.

Method used

The shock-resistant reinforcement structure is adopted, including zinc-white copper tube caps, Cova alloy tube seats, glass powder insulators, pins, damping and vibration-absorbing fixed installation frame columns, elastic suspension connecting arms and other components, forming a vertical low-frequency resonant mode quartz thermal resonator, which enhances the tolerance of mechanical vibration and impact.

Benefits of technology

It improves resolution, linearity, working temperature range and long-term stability, reduces the requirements for process errors, enhances the simplicity of the structure and the controllability of production costs, and improves the tolerance of mechanical vibration and impact.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model discloses a vertical type low-frequency resonance mode quartz thermosensitive resonator with a shock-proof reinforced structure, which relates to the technical field of resonance type quartz temperature sensors and comprises a zinc cupronickel pipe cap, a Kovar alloy pipe seat is arranged on the lower wall surface of the zinc cupronickel pipe cap, and the Kovar alloy pipe seat is arranged on the lower wall surface of the zinc cupronickel pipe cap. The Kovar alloy tube socket comprises a first glass powder insulator, a second glass powder insulator, a first tube pin, a second tube pin and a Kovar alloy base plate, and the first tube pin and the second tube pin are arranged on the Kovar alloy base plate and penetrate through the Kovar alloy base plate. The performance of the vertical low-frequency resonant mode quartz thermosensitive resonator is effectively improved, so that the resonator not only has the advantages of a bending resonant mode and a thickness shear mode, but also abandons some defects of the bending resonant mode and the thickness shear mode, and is high in resolution, good in linearity, wide in working temperature range, high in accuracy, excellent in long-term stability, high in mechanical vibration resistance and impact resistance, simple in structure, stable and reliable, and suitable for popularization and application. In addition, the requirement for process errors is not harsh, the production cost is low, and the consistency is good.
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Description

Technical Field

[0001] The utility model relates to the technical field of resonant quartz temperature sensors, in particular to a vertical low-frequency resonant mode quartz thermosensitive resonator with a shock-resistant reinforcement structure. Background Technique

[0002] The resonant quartz thermosensitive resonator is a piezoelectric resonant quartz thermosensitive element suitable for novel digital sensors. It is famous for its excellent characteristics such as ultra-high resolution, high accuracy, high stability, working in harsh environments, and frequency signal output. Currently, the piezoelectric quartz thermosensitive resonators available on the market can be roughly divided into two categories: surface acoustic wave type and bulk acoustic wave type.

[0003] The former thermosensitive resonator has a very high operating frequency, ranging from 50 MHz to several GHz. Its disadvantage is that the transmitted energy is mainly concentrated within the surface layer of the sensitive wafer. Therefore, it is easily affected by thermal stress, dust, oil, and gas mass loading, resulting in poor stability. With its high operating frequency, there are many parasitic signals, high power consumption, low Q value. The oscillation circuit must be adjacent to the quartz thermosensitive chip, otherwise, frequency hopping or self-excited oscillation phenomena are likely to occur, with a high frequency pulling sensitivity, and intermodulation interference is likely to occur in multi-channel sensing and signal transmission. Therefore, the temperature measurement range of the system is reduced, and the temperature measurement accuracy and long-term stability are lowered. In addition, using very high-frequency and ultra-high-frequency semiconductor devices not only has a high cost but also has relatively large temperature drift and time drift in the temperature measurement system, and poor anti-interference ability.

[0004] The latter bulk acoustic wave type thermosensitive resonators mainly include the following several types:

[0005] 1. High-frequency piezoelectric quartz thermosensitive resonators using the thickness-shear mode. For example, in 1965, Hammond et al. in the United States published a quartz temperature sensor using the LC cut type thickness-shear mode quartz (see IEEE Transactions, Vol. 4, No. 4, pp. 349-354). This was the first resonant quartz temperature sensor successfully developed internationally. In addition, high-frequency resonant quartz temperature sensors using the thickness-shear mode also include US Patent US4039969 "Quartz Thermometer" and the Chinese invention patents of one of the designers of the present utility model, CN100554900 "Precision Fast Response Resonant Quartz Temperature Sensor Suitable for Underwater Detection" and CN100555840 "Quartz Thermosensitive Resonator", etc.

[0006] 2. Piezoelectric quartz thermal resonators that adopt low-frequency modes such as bending resonance mode, twisting resonance mode, and length expansion resonance mode. For example, U.S. Patent US4299122 "Quartz Thermometer" (adopting bending resonance mode), U.S. Patent US4592663 "Resonator-Type Temperature Sensor" (adopting twisting resonance mode), U.S. Patent US4437773 "Quartz Thermometer" (adopting twisting resonance mode), and U.S. Patent US 5156460 Quartz Crystal Temperature Sensor (adopting twisting resonance mode).

[0007] The working mechanism of the piezoelectric quartz thermal resonator is "resonance", and its output signal is frequency. Since it does not work based on the "resistance" or "thermal electromotive force" characteristics generated by molecular thermal motion, the resonant quartz temperature sensor not only has excellent medium and low temperature characteristics, but also its ultra-low temperature (down to -269 °C) characteristics are extremely excellent. Its main advantages are as follows:

[0008] 1. The output signal is frequency, and it can be directly input into a computer without using an A / D conversion. Therefore, the characteristics of the temperature instrument with it as the core are not affected by the temperature drift and time drift introduced by the amplifier and A / D converter. In addition, the influence of the power supply voltage stability on the measurement accuracy is quite small.

[0009] 2. The temperature resolution is very high, up to 10ˉ6, which is currently the sensor with the highest resolution in the world.

[0010] 3. Good repeatability, excellent long-term stability, and the drift of temperature accuracy can be less than 0.005 °C / year.

[0011] 4. Strong resistance to nuclear radiation, up to 200,000 Rad.

[0012] 5. It can work under high-intensity magnetic fields, up to 16 T at most, far superior to temperature sensors such as platinum resistance, NTC, and some thermocouples.

[0013] However, the current piezoelectric quartz thermal resonators have the following disadvantages:

[0014] 1. The temperature resolution of the surface acoustic wave mode is the highest, and the thickness shear mode is the second. Among them, the thickness shear mode has the best long-term stability and accuracy, but its working frequency is relatively high (10 - 29.3 MHz). In order to ensure stable oscillation, the oscillation circuits of the surface acoustic wave mode and the thickness shear vibration mode must be close to the quartz sensitive element. Usually, the distance between its quartz thermal resonator and the oscillation circuit cannot be greater than 500 mm. Obviously, this limits the temperature measurement range of the thickness shear mode quartz temperature sensor.

[0015] 2. Although the quartz thermal resonator has a relatively strong ability to withstand nuclear radiation, the silicon semiconductor IC in the quartz temperature sensor assembly is a shortcoming in terms of anti-nuclear radiation and high temperature resistance. The simplest method is to place the quartz thermal resonator in an area with nuclear radiation, while the peripheral circuit with the silicon semiconductor IC is set in a nuclear-radiation-free normal-temperature space, thereby improving the ability of the resonant quartz temperature sensing component system to work in harsh environments.

[0016] 3. Due to the high operating frequency of the thickness-shear mode quartz temperature sensor, not only is the cost high, but the power consumption is also relatively large, generally several mW to dozens of mW. Obviously, it is not very suitable for use in pocket instruments, rockets, satellites and other aerospace equipment that require low power consumption.

[0017] 4. Generally, the higher the operating frequency, the more difficult it is to achieve good electromagnetic compatibility (EMC, i.e., Electromagnetic Compatibility); especially when there are multiple adjacent high-frequency sensing signals, the frequency pulling is more serious.

[0018] 5. The operating frequency of the tuning fork-type quartz thermal resonator using the bending resonance mode or the torsion resonance mode can be lower than 40 kHz. The distance between its quartz thermal resonator and the peripheral circuit can reach 3 - 10 m. It has a relatively high Q value and low power consumption. However, its Q value (quality factor) is not as high as that of the thickness-shear mode quartz thermal resonator, and its resolution, accuracy, and long-term stability cannot compete with the thickness-shear mode.

[0019] 6. Various current resonant-mode piezoelectric quartz thermal resonators, especially low-frequency-mode vertical piezoelectric resonant-type quartz thermal resonators such as the length-extension mode vertical quartz thermal resonator and the torsion-mode vertical quartz thermal resonator, have shortcomings in terms of resistance to mechanical vibration and mechanical shock:

[0020] Some piezoelectric resonant-type quartz temperature probes, especially those using the length-extension mode vertical quartz thermal resonator or the torsion-mode vertical quartz thermal resonator, for example, the quartz crystal temperature sensor (using a piezoelectric quartz thermal resonator with a torsion vibration mode) shown in the US Patent US5156460 of the present invention and the Chinese invention patent CN110044511B, a high-stability length-extension mode quartz temperature sensor using non-contact electrodes, etc. all have the following defects: Figure 3 The quartz crystal temperature sensor (using a piezoelectric quartz thermal resonator with a torsion vibration mode) shown in the US Patent US5156460 of the present invention and the Chinese invention patent CN110044511B, a high-stability length-extension mode quartz temperature sensor using non-contact electrodes, etc. all have the following defects:

[0021] If there is an operating error and the piezoelectric quartz thermal resonator shown in US Patent No. 5,156,460 accidentally drops to the ground in a free-fall manner, since the support frames {45} and / or {46} of the piezoelectric quartz thermal resonator will be subjected to strong vibrations and impact forces along the directions of the opposing support columns {42} and {44}, that is, the vibrations and impact forces in the so-called X-axis (electric axis) direction of the quartz crystal, stress concentration may occur in the support frames {45} and / or {46}, resulting in cracks or even fractures, and damage to the connection electrodes of the piezoelectric quartz thermal resonator;

[0022] The following problems may also occur:

[0023] Although the support frames {45} and / or {46} remain intact, the stress generated by the left support frame {45} and the right support frame {46} will be transmitted through the opposing support column {42} to the heart component of the low-frequency mode vertical piezoelectric resonant type quartz thermal resonator - the single-arm vibrating beam {38}. Since the slender single-arm vibrating beam {38} is relatively thin, the stress may cause cracks in it, or change the resonant frequency of the single-arm vibrating beam {38}, affecting its frequency-temperature characteristics, thereby reducing its temperature sensitivity, accuracy, and stability.

[0024] The square through-hole 204 on the shock-absorbing support base in Chinese Invention Patent CN110044511B has a certain anti-vibration and impact resistance in the direction of the earth's gravity. However, since the square through-hole 204 is made by processing means, its existence significantly raises the physical center of gravity of the quartz thermal resonator, seriously reducing the anti-vibration acceleration and impact resistance in the direction perpendicular to gravity. In particular, it causes an increase in the bending moment and torsional moment of the support column 203 and an increase in the stress at the welding point of the kovar pin 103 and the bus bar, affecting its frequency-temperature characteristics and resulting in a decrease in its temperature sensitivity, accuracy, and stability. Further innovation and improvement are urgently needed.

[0025] Experiments show that when low-frequency mode vertical piezoelectric resonant type quartz thermal resonators such as length expansion mode vertical quartz thermal resonators or torsion mode vertical quartz thermal resonators are subjected to a mechanical shock test of 5000g, 0.2ms and a vibration endurance routine test of 10g / vibration frequency 10 - 2000Hz, 8hr, obvious effects of mechanical shock and vibration on their frequency-temperature characteristics can already be detected. Obviously, the task of developing a vertical low-frequency vibration mode quartz thermal resonator with a shock-resistant reinforcement structure, such as a length expansion mode quartz thermal resonator or a torsion mode quartz thermal resonator, must be put on the agenda. Utility Model Content

[0026] The utility model is realized through the following technical solutions: A vertical low-frequency resonant mode quartz thermosensitive resonator with a seismic-resistant reinforcement structure, including the zinc white copper tube cap. A kovar alloy tube seat is provided on the lower wall surface of the zinc white copper tube cap. The kovar alloy tube seat includes a first glass powder insulator, a second glass powder insulator, a first pin, a second pin, and a kovar alloy base plate. The first pin and the second pin are arranged on the kovar alloy base plate and penetrate through the kovar alloy base plate. The first glass powder insulator and the second glass powder insulator are respectively arranged at the centers of the first pin and the second pin and are located inside the zinc white copper tube cap. A vertical length expansion mode quartz thermosensitive chip is provided between the upper ends of the first pin and the second pin. First welding points and second welding points are respectively provided at the connection positions of the first pin and the second pin and the vertical length expansion mode quartz thermosensitive chip.

[0027] Preferably, the vertical length expansion mode quartz thermosensitive chip includes a vibration-resistant bottom impact-resistant support area. A first damping vibration reduction fixed installation frame column and a second damping vibration reduction fixed installation frame column are provided on the upper edge line of the vibration-resistant bottom impact-resistant support area. A first cantilever beam short arm and a second cantilever beam short arm are respectively provided at the upper ends of the first damping vibration reduction fixed installation frame column and the second damping vibration reduction fixed installation frame column. A first elastic suspension connecting arm and a second elastic suspension connecting arm are provided on the side ends of the first cantilever beam short arm and the second cantilever beam short arm. A first opposing support connecting arm and a second opposing support connecting arm are respectively connected to the lower ends of the first elastic suspension connecting arm and the second elastic suspension connecting arm. A length expansion mode quartz thermosensitive arm is connected between the first opposing support connecting arm and the second opposing support connecting arm.

[0028] Preferably, the length expansion mode quartz thermosensitive arm includes an upper end length expansion mode quartz thermosensitive arm and a lower end length expansion mode quartz thermosensitive arm. The upper end length expansion mode quartz thermosensitive arm and the lower end length expansion mode quartz thermosensitive arm are respectively located on the upper and lower sides of the first opposing support connecting arm.

[0029] Preferably, a first comb-shaped resonant damping absorption structure body is provided on the side wall surface of the vibration-resistant bottom impact-resistant support area and the side wall surface of the first damping vibration reduction fixed installation frame column. A second comb-shaped resonant damping absorption structure body is provided on the other side wall surface of the first damping vibration reduction fixed installation frame column. A fourth comb-shaped resonant damping absorption structure body is provided on the other side wall surface of the vibration-resistant bottom impact-resistant support area and the side wall surface of the second damping vibration reduction fixed installation frame column. A third comb-shaped resonant damping absorption structure body is provided on the other side wall surface of the second damping vibration reduction fixed installation frame column.

[0030] Preferably, a vibration and impact energy trap hole is provided at the center of the vibration-resistant bottom impact support area. A first inclined support leg and a second inclined support leg are provided at the lower end of the vibration-resistant bottom impact support area. A first vibration notch sawtooth wave damping protrusion and a second vibration notch sawtooth wave damping protrusion are provided at the lower ends of the first inclined support leg and the second inclined support leg. A first arc-shaped resonance damping absorber, a second arc-shaped resonance damping absorber, a third arc-shaped resonance damping absorber, and a fourth arc-shaped resonance damping absorber are provided in the vibration and impact energy trap hole.

[0031] Preferably, the first pin and the second pin are respectively connected to the first inclined support leg and the second inclined support leg. A first gravity center downward shift and fixed function strengthening adhesive and a second gravity center downward shift and fixed function strengthening adhesive are respectively provided on the first pin and the second pin.

[0032] Preferably, a first inner edge line is provided on the inner side of the first support leg, and a second inner edge line is provided on the inner side of the second support leg. The intersection point of the extension lines of the first inner edge line and the second inner edge line falls at the center of the upper edge line 34 of the vibration-resistant bottom impact support area 27. Each sawtooth angle of the sawteeth of the first vibration notch sawtooth wave damping protrusion and the second vibration notch sawtooth wave damping protrusion is equal.

[0033] Beneficial effects

[0034] The utility model provides a vertical low-frequency resonant mode quartz thermosensitive resonator with a seismic-resistant reinforcement structure. Different from the structure of the quartz crystal temperature sensor using a torsional vibration mode quartz thermosensitive resonator disclosed in US Patent No. 5,156,460, the utility model does not directly connect the integrated temperature-sensitive core mechanism of the length expansion mode quartz thermosensitive arm and the opposing support connecting arms on its left and right to the fixed mounting frame. Instead, elastic isolation quartz parts - the first elastic suspension connecting arm 25A and the second elastic suspension connecting arm are added between them. They are both single-piece structures of the same piece of quartz crystal material with the same cutting type. Secondly, different from the current conventional fixed mounting frame, the utility model does not adopt the conventional "door frame type" fixed mounting frame structure, but adopts a seismic-resistant reinforcement structure: the first opposing support connecting arm, the second opposing support connecting arm, the first damping and shock-absorbing fixed mounting frame body column, the second damping and shock-absorbing fixed mounting frame body column, the first elastic suspension connecting arm, the second elastic suspension connecting arm, the first short cantilever beam, the second short cantilever beam, the shock-resistant bottom impact support area, the vibration and shock energy trap holes, the first comb-shaped resonant damping absorption structure body, the second comb-shaped resonant damping absorption structure body, the third comb-shaped resonant damping absorption structure body, the fourth comb-shaped resonant damping absorption structure body, the first inclined support foot, the second inclined support foot, the first arc-shaped resonant damping absorption body, the second arc-shaped resonant damping absorption body, the third arc-shaped resonant damping absorption body, the fourth arc-shaped resonant damping absorption body; the first vibration notch sawtooth wave damping protrusion, the second vibration notch sawtooth wave-shaped damping protrusion, the first center of gravity downward shift and fixed strengthening adhesive, the second center of gravity downward shift and fixed strengthening adhesive and other components and structures effectively improve the performance of the vertical low-frequency resonant mode quartz thermosensitive resonator, making it not only have the advantages of the flexural resonant mode and thickness shear mode, but also abandon some of their disadvantages:

[0035] It has high resolution, good linearity, a wide working temperature range, high accuracy, excellent long-term stability, strong resistance to mechanical vibration and shock, a simple structure, is stable and reliable. In addition, it has less stringent requirements for process errors, low production costs, and good consistency, thus solving the difficulties and pain points pointed out in the background technology. Brief Description of the Drawings

[0036] Figure 1 : Front structural schematic diagram of the vertical length expansion mode quartz thermosensitive resonator wafer with a seismic-resistant reinforcement structure;

[0037] Figure 2 : Partial cross-sectional structural schematic diagram of the vertical length expansion mode quartz thermosensitive resonator with a seismic-resistant reinforcement structure;

[0038] Figure 3 : Structural schematic diagram of a conventional vertical low-frequency resonant mode quartz thermosensitive resonator, the vertical torsional vibration mode quartz thermosensitive resonator structure in US Patent No. 5,156,460.

[0039] In the figure: 1. Integrated package housing; 10. Vertical length expansion mode quartz thermal resonator with seismic reinforcement structure; 2. Vertical length expansion mode quartz thermal wafer; 3. Zinc white copper tube cap; 4. Kovar alloy tube base; 5A. First glass powder insulator; 5B. Second glass powder insulator; 6A. First pin; 6B. Second pin; 7. Kovar alloy base plate; 8A. First bus bar; 8B. Second bus bar; 9A. Upper length expansion mode quartz thermal arm; 9B. Lower length expansion mode quartz thermal arm; 11A. First welding point; 11B. Second welding point; 14A. Upper metal excitation electrode on the left side; 14B. Lower metal excitation electrode on the left side; 14C. Upper metal excitation electrode on the right side; 14D. Lower metal excitation electrode on the right side; 16A. First silver thin film connection electrode; 16B. Second silver thin film connection electrode; 18A. First metal thin film connection electrode; 18B. Second metal thin film connection electrode; 19A. First gravity center downward shift and fixed function enhanced adhesive; 19B. Second gravity center downward shift and fixed function enhanced adhesive; 23A. First damping and vibration reduction fixed installation frame column; 23B. Second damping and vibration reduction fixed installation frame column; 25A. First elastic suspension connection arm; 25B. Second elastic suspension connection arm; 26A. First short cantilever beam; 26B. Second short cantilever beam; 27. Seismic bottom impact resistant support area; 28. Vibration and shock energy trap holes; 29A. First comb-shaped resonance damping absorption structure; 29B. Second comb-shaped resonance damping absorption structure; 29C. Third comb-shaped resonance damping absorption structure; 29D. Fourth comb-shaped resonance damping absorption structure; 30A. First inclined support foot; 30B. Second inclined support foot; 31A. First inner edge line; 31B; Second inner edge line; 32A. First vibration notch sawtooth wave damping protrusion; 32B. Second vibration notch sawtooth wave damping protrusion; 33A. First arc-shaped resonance damping absorber; 33B. Second arc-shaped resonance damping absorber; 33C. Third arc-shaped resonance damping absorber; 33D. Fourth arc-shaped resonance damping absorber; 34. Upper edge line; 42A. First opposing support connection arm; 42B. Second opposing support connection arm; 9. Length expansion mode quartz thermal arm. Detailed implementation mode

[0040] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0041] Please refer toFigures 1-3 , the present utility model provides a technical solution: a vertical low-frequency resonant mode quartz thermal resonator with a shock-resistant reinforcement structure. For example, a vertical length expansion mode quartz thermal resonator 10 with a shock-resistant reinforcement structure is composed of an integrated package housing 1 and a vertical length expansion mode quartz thermal chip 2, and the external dimensions of its package structure are less than or equal to φ3*8mm;

[0042] The vertical length expansion mode quartz thermal chip 2 is located inside the integrated package housing 1; the integrated package housing 1 includes a zinc white copper tube cap 3 with an opening only at one end and a kovar alloy tube base 4 that can be hermetically combined with it;

[0043] The kovar alloy tube base 4 is composed of a first glass powder insulator 5A, a second glass powder insulator 5B, a first pin 6A, a second pin 6B, and a kovar alloy base plate 7;

[0044] Among them, the first pin 6A and the second pin 6B are both composed of silver-plated kovar alloy wires, and they are successively located at the centers of the first glass powder insulator 5A and the second glass powder insulator 5B; the first glass powder insulator 5A and the second glass powder insulator 5B are hermetically arranged on the kovar alloy base plate 7 of the kovar alloy tube base 4, and the first glass powder insulator 5A and the second glass powder insulator 5B are insulated from each other; the lengths of the first pin 6A and the second pin 6B are much greater than the thickness of the kovar alloy base plate 7, and they respectively extend out of the upper and lower surfaces of the kovar alloy tube base 4;

[0045] The length of the first pin 6A extending above the kovar alloy tube base 4 and the length of the second pin 6B extending above the kovar alloy tube base 4 are sufficient to meet the physical contact and connection with the vertical length expansion mode quartz thermal chip 2, while the length of the first pin 6A extending below the kovar alloy tube base 4 and the length of the second pin 6B extending below the kovar alloy tube base 4 can fully meet the requirements for connection with the external circuit.

[0046] The structure of the vertical length expansion mode quartz thermal chip 2 is as Figure 1 and Figure 2As shown, the vertical length expansion mode quartz thermosensitive wafer 2 includes a length expansion mode quartz thermosensitive arm 9, an upper end length expansion mode quartz thermosensitive arm 9A, a lower end length expansion mode quartz thermosensitive arm 9B, a first pair of opposing support connection arms 42A, a second pair of opposing support connection arms 42B, a first damping vibration reduction fixed installation frame column 23A, a second damping vibration reduction fixed installation frame column 23B, a first elastic suspension connection arm 25A, a second elastic suspension connection arm 25B, a first cantilever beam short arm 26A, a second cantilever beam short arm 26B, a vibration-resistant bottom shock-resistant support area 27, vibration and shock energy trap holes 28, a first comb-shaped resonance damping absorption structure 29A, a second comb-shaped resonance damping absorption structure 29B, a third comb-shaped resonance damping absorption structure 29C, a fourth comb-shaped resonance damping absorption structure 29D, a first inclined support foot 30A, a second inclined support foot 30B, a first arc-shaped resonance damping absorber 33A, a second arc-shaped resonance damping absorber 33B, a third arc-shaped resonance damping absorber 33C, a fourth arc-shaped resonance damping absorber 33D; a first vibration notch sawtooth wave damping protrusion 32A, a second vibration notch sawtooth wave-shaped damping protrusion 32B, a first center of gravity downward shift and fixed strengthening adhesive 19A, a second center of gravity downward shift and fixed strengthening adhesive 19B.

[0047] The vertical length expansion mode quartz thermosensitive wafer 2 and each of the above-mentioned interconnected quartz components are processed and fabricated from the same piece of double-angle thermosensitive cut-type sheet quartz crystal material by using dry etching process technology or wet etching process technology.

[0048] The core component of the vertical length expansion mode quartz thermosensitive wafer 2 is the length expansion mode quartz thermosensitive arm 9 that operates in the length expansion resonance mode; the length expansion mode quartz thermosensitive arm 9 is a slender vibrating arm, which is arranged inside the fixed installation frame structure of the vertical length expansion mode quartz thermosensitive wafer 2, and the vibration direction of the vibrating arm is along the crystal y'-axis (mechanical axis) direction of the vertical length expansion mode quartz thermosensitive wafer 2 and vibrates up and down. In the length expansion resonance mode, it operates at the fundamental frequency, and its vibration frequency is a function of the measured temperature.

[0049] The described length telescopic mode quartz thermal sensitive arm 9 is composed of a pair of sub-length telescopic mode quartz thermal sensitive arms, namely, the upper end length telescopic mode sub-quartz thermal sensitive arm 9A located above and the lower end length telescopic mode sub-quartz thermal sensitive arm 9B located below. The center lines in the width direction (perpendicular to the paper surface) of the two (the transverse geometric symmetry center line of the width) are on the same straight line, and at the same time, they are consistent with the direction of the y'-axis (mechanical axis) of the quartz crystal. Moreover, the outer dimensions of the two are equal, and at the same time, they are axisymmetric about the transverse geometric symmetry center line of the length telescopic mode quartz thermal sensitive arm 9. In addition, the dividing line between the upper end length telescopic mode sub-quartz thermal sensitive arm 9A and the lower end length telescopic mode sub-quartz thermal sensitive arm 9B should coincide with the geometric symmetry center line of the first opposing support connecting arm 42A and the second opposing support connecting arm 42B. In other words, the dividing line between the upper end length telescopic mode sub-quartz thermal sensitive arm 9A and the lower end length telescopic mode sub-quartz thermal sensitive arm 9B coincides with the direction of the transverse force concentrated acting force of the length telescopic mode quartz thermal sensitive arm 9 (the line connecting the two nodes), and at the same time, it also coincides with the geometric symmetry center line of the first opposing support connecting arm 42A and the second opposing support connecting arm 42B.

[0050] The described first opposing support connecting arm 42A and the second opposing support connecting arm 42B have equal outer dimensions, and their transverse symmetry center lines are collinear, which is consistent with the direction of the X-axis (electrical axis) of the quartz crystal, and at the same time, they are axisymmetric about the longitudinal center line of the length telescopic mode quartz thermal sensitive arm 9.

[0051] The right end of the described first opposing support connecting arm 42A is physically connected to the central area of the length telescopic mode quartz thermal sensitive arm 9, and its left end is connected to one end of the first elastic suspension connecting arm 25A. The left end of the described second opposing support connecting arm 42B is physically connected to the central area of the length telescopic mode quartz thermal sensitive arm 9, and its right end is connected to one end of the second elastic suspension connecting arm 25B.

[0052] The other end of the described first elastic suspension connecting arm 25A is connected to one end of the first cantilever beam short arm 26A. The other end of the described second elastic suspension connecting arm 25B is connected to one end of the second cantilever beam short arm 26B.

[0053] The other end of the described first cantilever beam short arm 26A is connected to the upper end of the first damping and vibration reduction fixed installation frame column 23A. The other end of the described second cantilever beam short arm 26B is connected to the upper end of the second damping and vibration reduction fixed installation frame column 23B.

[0054] The described first comb-shaped resonance damping absorption structure 29A is arranged in the lower half area outside the first damping and vibration reduction fixed installation frame column 23A, and is arranged in the lower half area outside the first damping and vibration reduction fixed installation frame column 23A opposite to the lower end length telescopic mode sub-quartz thermal sensitive arm 9B.

[0055] The fourth comb-shaped resonance damping absorption structure 29D is arranged in the lower half area outside the second damping and vibration reduction fixed installation frame column 23B, and is arranged in the lower half area outside the second damping and vibration reduction fixed installation frame column 23B opposite to the lower end length expansion die quartz thermosensitive arm 9B;

[0056] The second comb-shaped resonance damping absorption structure 29B is arranged in the upper half area inside the first damping and vibration reduction fixed installation frame column 23A, and is arranged in the upper half area inside the first damping and vibration reduction fixed installation frame column 23A symmetrical to the first elastic suspension connecting arm 25A;

[0057] The third comb-shaped resonance damping absorption structure 29C is arranged in the upper half area inside the second damping and vibration reduction fixed installation frame column 23B, and is arranged in the upper half area inside the second damping and vibration reduction fixed installation frame column 23B symmetrical to the first elastic suspension connecting arm 25B.

[0058] The vibration-resistant bottom impact-resistant support area 27 is located at the lowermost end of the vertical length expansion die quartz thermosensitive chip 2. It is one of the key parts of the vertical length expansion die quartz thermosensitive chip and also one of the innovation points of the present utility model. It undertakes the function of reducing the physical center of gravity of the vertical length expansion die quartz thermosensitive chip 2 and strengthening the installation and fixation. It not only improves the anti-vibration and anti-impact ability of the vibration and impact energy trap hole 28 in the direction of the earth's gravity, but also reduces the bending moment and torsional moment of the first damping and vibration reduction fixed installation frame column 23A and the second damping and vibration reduction fixed installation frame column 23B, as well as the stress of the first welding point 11A and the second welding point 11B, significantly improving the ability to isolate mechanical vibration, reduce and suppress mechanical impact, and the installation and fixation strength of the vertical length expansion die quartz thermosensitive chip 2.

[0059] The vibration-resistant bottom impact-resistant support area 27 includes a first inclined support foot 30A, a second inclined support foot 30B, a vibration and impact energy trap hole 28, a first comb-shaped resonance damping absorption structure 29A, a fourth comb-shaped resonance damping absorption structure 29D, a first vibration notch sawtooth wave damping protrusion 32A, a second vibration notch sawtooth wave damping protrusion 32B, a first center-of-gravity downward shift and fixation function strengthening adhesive 19A, a second center-of-gravity downward shift and fixation function strengthening adhesive 19B, a first arc-shaped resonance damping absorber 33A, a second arc-shaped resonance damping absorber 33B, a third arc-shaped resonance damping absorber 33C, and a fourth arc-shaped resonance damping absorber 33D.

[0060] The inner edge lines 31A of the first support leg 30A and the inner edge lines 31B of the second support leg 30B respectively form an acute angle with the gravity vertical line. The intersection point of the extension line of the inner edge line 31A of the first support leg 30A and the extension line of the inner edge line 31B of the second support leg 30B falls within the area below the upper edge line 34 of the shock-resistant bottom shock support area 27, and preferably, it is located at the midpoint of the length of the upper edge line 31. In addition, the two serrated edges of the sawtooth wave of the first vibration notch sawtooth wave damping protrusion 32A and the second vibration notch sawtooth wave damping protrusion 32B must be parallel to the first inner edge line 31A of the first support leg 30A and the second inner edge line 31B of the second support leg 30B respectively; in other words, the respective sawtooth angles of the sawtooth waves of the first vibration notch sawtooth wave damping protrusion 32A and the second vibration notch sawtooth wave damping protrusion 32B are equal, and are all equal to the included angle between the extension line of the first inner edge line 31A of the first support leg 30A and the extension line of the second inner edge line 31B of the second support leg 30B.

[0061] Lower the center of gravity of the vertical length expansion mode quartz thermosensitive wafer 2, enhance its physical symmetry, and strengthen its mechanical stability, thereby isolating and suppressing mechanical vibrations and impacts from the outside. In addition, by using the first center-of-gravity downward shift and fixed-function strengthening adhesive 19A and the second center-of-gravity downward shift and fixed-function strengthening adhesive 19B, not only further lower the center of gravity of the vertical length expansion mode quartz thermosensitive wafer 2, but also greatly enhance the mechanical connection strength between the vertical length expansion mode quartz thermosensitive wafer 2 and the kovar alloy socket 4, improving the stability and reliability of the vertical low-frequency vibration mode quartz thermosensitive resonator in resisting mechanical vibrations and impacts.

[0062] The geometric center of the vibration and shock energy trap hole 28 is located on the extension line of the longitudinal center line of the length expansion mode quartz thermosensitive arm 9, and the vibration and shock energy trap hole 28 is symmetric about its geometric center in the up-down and left-right directions.

[0063] The first arc-shaped resonance damping absorber 33A, the second arc-shaped resonance damping absorber 33B, the third arc-shaped resonance damping absorber 33C, and the fourth arc-shaped resonance damping absorber 33D are sequentially arranged on the peripheral edge of the vibration and shock energy trap hole 28; when viewed along the wafer normal direction, they are arc-shaped. At this time, the center of the arc (i.e., its center of curvature) is located above and below or on the left and right sides, i.e., outside, of the edge of the vibration and shock energy trap hole 28, and its radius of curvature is approximately equal to (1 / 4)*N of the wavelength of the thickness bending vibration mode to be suppressed and / or (1 / 4)*N of the wavelength of the contour vibration mode, where N is a positive integer.

[0064] The arc-shaped protrusions provided around the vibration and shock energy well holes 28 can cause refraction, diffuse reflection, and scattering of the signal energy of contour resonance parasitic modes such as thickness shear mode and high-order bending vibration mode, which not only enhances the energy well effect within the quartz crystal wafer but also prevents them from coherently superposing with the main mode.

[0065] Obviously, the vibration and shock energy well holes 28 and their arc-shaped resonance damping absorbers can not only enhance the isolation and damping of the mechanical vibration and shock intensity from the outside world, but more critically, they can also suppress parasitic vibration modes (thickness bending vibration, contour vibration), improve the energy well function, and increase its Q value (quality factor); they are fabricated using dry etching process technology or wet etching process technology.

[0066] The first pin 6A is connected to the first bus bar 8A of the length expansion mode quartz thermosensitive wafer 2, and the connection point is the first welding point 11A. The first bus bar 8A is connected to the first metal thin film connection electrode 18A located on the surface of the first damping and vibration reduction fixed installation frame column 23A. The first metal thin film connection electrode 18A is further connected to the first silver thin film connection electrode 16A located on the surface of the first opposing support connection arm 42A, and the first silver thin film connection electrode 16A is electrically connected to the upper metal excitation electrode 14A on the left side and the lower metal excitation electrode 14B on the left side of the upper length expansion mode sub-quartz thermosensitive arm 9A and the lower length expansion mode sub-quartz thermosensitive arm 9B.

[0067] The second pin 6B is connected to the second bus bar 8B of the length expansion mode quartz thermosensitive wafer 2, and the connection point is the second welding point 11B. The first bus bar 8B is connected to the second metal thin film connection electrode 18B located on the surface of the second damping and vibration reduction fixed installation frame column 23B. The second metal thin film connection electrode 18B is further connected to the second silver thin film connection electrode 16B located on the surface of the second opposing support connection arm 42B, and the second silver thin film connection electrode 16B is electrically connected to the upper metal excitation electrode 14C on the right side and the lower metal excitation electrode 14D on the right side of the upper length expansion mode sub-quartz thermosensitive arm 9A and the lower length expansion mode sub-quartz thermosensitive arm 9B. Each of the above metal electrodes is fabricated using vacuum evaporation or sputtering process.

[0068] Therefore, when an alternating voltage is applied across the two ends of the first pin 6A and the second pin 6B, the length expansion mode quartz thermosensitive arm 9 will generate length expansion vibration.

[0069] The first center-of-gravity downward shift and fixed-function enhanced adhesive body 19A and the second center-of-gravity downward shift and fixed-function enhanced adhesive body 19B are formed by coating an adhesive body composed of an organic adhesive or an inorganic adhesive, monazite, shungite, crystal powder, and a carbon fiber material mixture on the surfaces where the first bus bar 8A, the second bus bar 8B, the first welding point 11A, the second welding point 11B, and the first vibration notch sawtooth wave damping protrusion 32A and the second vibration notch sawtooth wave damping protrusion 32B are in contact with the Kovar alloy base plate 7.

[0070] Since the use of monazite and crystal powder improves the acoustic impedance matching with the quartz wafer, the energy of the length expansion mode is not easily leaked, so the dynamic resistance value is low and the Q value is higher than that of the conventional structure vertical low-frequency resonance mode quartz thermal resonator; due to the use of shungite, carbon fiber, and monazite with a porous structure and matching pores, not only can the absorption and damping of vibration shock energy be improved, but also the bonding strength and shear resistance ability can be enhanced. Therefore, it can not only improve the mechanical strength, play the role of lowering the center of gravity and improving the stability, but also absorb external vibration and impact forces, play the role of stress buffering, and prevent the leakage of resonance energy, improving the Q value of the vertical low-frequency resonance mode quartz thermal resonator.

[0071] The open end of the zinc white copper tube cap 3 is hermetically connected to the Kovar alloy tube seat 4 by using laser welding, brazing process or energy storage welding technology, and a certain concentration of helium or hydrogen is filled inside, thus forming a vertical low-frequency vibration mode quartz thermal resonator with a shock-resistant reinforcement structure - a vertical length expansion mode quartz thermal resonator with a shock-resistant reinforcement structure.

[0072] It should be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations.

Claims

1. A vertical low-frequency resonant mode quartz thermosensitive resonator with a seismic-resistant reinforcement structure, comprising a white brass tube cap (3), characterized in that, The lower wall surface of the brass cap (3) is provided with a Kovar alloy tube seat (4). The Kovar alloy tube seat (4) includes a first glass powder insulator (5A), a second glass powder insulator (5B), a first pin (6A), a second pin (6B), and a Kovar alloy base plate (7). The first pin (6A) and the second pin (6B) are arranged on the Kovar alloy base plate (7) and penetrate through the Kovar alloy base plate (7). The first glass powder insulator (5A) and the second glass powder insulator (5B) are respectively arranged at the centers of the first pin (6A) and the second pin (6B) and are located inside the brass cap (3). A vertical length expansion mode quartz thermosensitive wafer (2) is provided between the upper ends of the first pin (6A) and the second pin (6B). First welding points (11A) and second welding points (11B) are respectively provided at the connection positions of the first pin (6A) and the second pin (6B) and the vertical length expansion mode quartz thermosensitive wafer (2). The vertical length expansion mode quartz thermosensitive wafer (2) includes a vibration-resistant bottom impact-resistant support area (27). A first damping and vibration reduction fixed installation frame column (23A) and a second damping and vibration reduction fixed installation frame column (23B) are provided on the upper edge line (34) of the vibration-resistant bottom impact-resistant support area (27). First cantilever beam short arms (26A) and second cantilever beam short arms (26B) are respectively provided at the upper ends of the first damping and vibration reduction fixed installation frame column (23A) and the second damping and vibration reduction fixed installation frame column (23B). First elastic suspension connecting arms (25A) and second elastic suspension connecting arms (25B) are provided on the side ends of the first cantilever beam short arm (26A) and the second cantilever beam short arm (26B). First opposing support connecting arms (42A) and second opposing support connecting arms (42B) are respectively connected to the lower ends of the first elastic suspension connecting arm (25A) and the second elastic suspension connecting arm (25B). A length expansion mode quartz thermosensitive arm (9) is connected between the first opposing support connecting arm (42A) and the second opposing support connecting arm (42B). The length expansion mode quartz thermosensitive arm (9) includes an upper end length expansion mode sub-quartz thermosensitive arm (9A) and a lower end length expansion mode sub-quartz thermosensitive arm (9B). The upper end length expansion mode sub-quartz thermosensitive arm (9A) and the lower end length expansion mode sub-quartz thermosensitive arm (9B) are respectively located on the upper and lower sides of the first opposing support connecting arm (42A).

2. The vertical low-frequency resonant mode quartz thermosensitive resonator with a seismic-resistant reinforcement structure according to claim 1, characterized in that ,On the side wall surface of the vibration-resistant bottom impact support area (27) and the side wall surface of the first damping vibration reduction fixed installation frame column (23A), a first comb-shaped resonance damping absorption structure body (29A) is provided. On the other side wall surface of the first damping vibration reduction fixed installation frame column (23A), a second comb-shaped resonance damping absorption structure body (29B) is provided. On the other side wall surface of the vibration-resistant bottom impact support area (27) and the side wall surface of the second damping vibration reduction fixed installation frame column (23B), a fourth comb-shaped resonance damping absorption structure body (29D) is provided. On the other side wall surface of the second damping vibration reduction fixed installation frame column (23B), a third comb-shaped resonance damping absorption structure body (29C) is provided.

3. A vertical low-frequency resonant mode quartz thermosensitive resonator with a seismic-resistant reinforcement structure according to claim 1, characterized in that ,At the center of the vibration-resistant bottom impact support area (27), a vibration and impact energy trap hole (28) is provided. At the lower end of the vibration-resistant bottom impact support area (27), a first inclined support foot (30A) and a second inclined support foot (30B) are provided. At the lower ends of the first inclined support foot (30A) and the second inclined support foot (30B), a first vibration notch sawtooth wave damping protrusion (32A) and a second vibration notch sawtooth wave damping protrusion (32B) are provided. Inside the vibration and impact energy trap hole (28), a first arc-shaped resonance damping absorption body (33A), a second arc-shaped resonance damping absorption body (33B), a third arc-shaped resonance damping absorption body (33C), and a fourth arc-shaped resonance damping absorption body (33D) are provided.

4. A vertical low-frequency resonant mode quartz thermosensitive resonator having a seismic-resistant reinforcement structure according to claim 1, wherein ,The first pin (6A) and the second pin (6B) are respectively connected to the first inclined support foot (30A) and the second inclined support foot (30B). On the first pin (6A) and the second pin (6B), a first gravity center downward shift and fixed function strengthening adhesive body (19A) and a second gravity center downward shift and fixed function strengthening adhesive body (19B) are respectively provided.

5. A vertical low-frequency resonant mode quartz thermosensitive resonator with a seismic-resistant reinforcement structure according to claim 3, characterized in that ,On the inner side of the first inclined support foot (30A), a first inner edge line (31A) is provided. On the inner side of the second inclined support foot (30B), a second inner edge line (31B) is provided. The intersection point of the extension lines of the first inner edge line (31A) and the second inner edge line (31B) falls at the center of the upper edge line (34) of the vibration-resistant bottom impact support area (27). Each sawtooth angle of the sawteeth of the first vibration notch sawtooth wave damping protrusion (32A) and the second vibration notch sawtooth wave damping protrusion (32B) is equal.

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