GaN power device structure with built-in current sampling
By building a current sampling structure in the GaN power device, a current sampling tube that shares the gate and drain is formed using through holes and interconnected metal units, the problem of power loss in current monitoring is solved, and efficient and accurate current detection is achieved.
Patent Information
- Application Number
- CN202422037341.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-21
- Publication Date
- 2025-07-04
- Estimated Expiration
- 2034-08-21
AI Technical Summary
Existing GaN power devices have power loss problems during current monitoring, mainly due to the introduction of series resistors, resulting in reduced efficiency.
A GaN power device structure with built-in current sampling is designed. By setting through holes on the gate metal, source metal and drain metal, and connecting them with the metals using a first interconnecting metal unit, a built-in current sampling tube is formed, and the gate and drain are shared. By monitoring the current value of the sampling tube, the current value of the power tube is calculated, and the introduction of sampling resistors is avoided.
It realizes accurate monitoring of the real-time current of GaN power devices without increasing power loss, and improves the accuracy and efficiency of current detection.
Smart Images
Figure CN223066171U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductors, and more specifically, to a GaN power device structure with built-in current sampling. Background Art
[0002] Gallium nitride (GaN) is one of the representatives of the third-generation semiconductor materials. Due to its relatively high bandgap width, it is also known as a wide-bandgap semiconductor. GaN has a higher critical breakdown electric field strength compared to traditional Si materials, and also has advantages such as high temperature resistance and radiation resistance. GaN devices based on AlGaN / GaN heterojunctions can achieve both a relatively high breakdown voltage and a relatively low on-resistance. Moreover, since GaN devices conduct electricity with a single carrier (electrons), they have a higher switching speed. GaN devices with high breakdown voltage, low on-resistance, and high switching speed are widely used in the field of power semiconductors to improve the efficiency of power conversion.
[0003] During the actual operation of GaN power devices, the current flowing through the source and drain is constantly changing. To ensure the safe operation of the device and the safety of the power circuit, sometimes it is necessary to monitor the source-drain current of GaN power devices. Usually, a resistor is connected in series under the source electrode of the GaN power device, and the change in the voltage of this resistor is monitored to achieve current monitoring of the GaN power device. However, this series resistor will generate additional power loss, resulting in a reduction in the efficiency of the system. Summary of the Utility Model
[0004] The purpose of the utility model is to provide a GaN power device structure with built-in current sampling to solve the problem of power loss in current detection in the prior art.
[0005] The embodiments of the utility model are achieved through the following technical solutions:
[0006] A GaN power device structure with built-in current sampling includes several groups of gate metals, source metals, and drain metals. Two gate metals are arranged on two adjacent sides of the source metal, and the drain metal is arranged on the side of the gate metal away from the source metal. First through-holes are provided on the gate metal, source metal, and drain metal.
[0007] It further includes a first interconnect metal unit, which is respectively connected to the gate metal, source metal, and drain metal, and a second through-hole is provided on the first interconnect metal unit.
[0008] Preferably, three groups of source metals are provided, and the fourth interconnect metal is connected to the source metal in the middle.
[0009] Preferably, the first interconnecting metal unit includes a first interconnecting metal, a second interconnecting metal, a third interconnecting metal, and a fourth interconnecting metal. Second vias are provided on the first interconnecting metal, the second interconnecting metal, the third interconnecting metal, and the fourth interconnecting metal. The first interconnecting metal is connected to all the source metals, the second interconnecting metal is connected to the drain metal, the third interconnecting metal is connected to the gate metal, and the fourth interconnecting metal is connected to the source metal located in the middle.
[0010] Preferably, it further includes a second interconnecting metal unit, and the second interconnecting metal unit is respectively connected to the first interconnecting metal, the second interconnecting metal, the third interconnecting metal, and the fourth interconnecting metal.
[0011] Preferably, the second interconnecting metal unit includes a fifth interconnecting metal, a sixth interconnecting metal, a seventh interconnecting metal, an eighth interconnecting metal, a ninth interconnecting metal, and a tenth interconnecting metal;
[0012] The fifth interconnecting metal is connected to the first interconnecting metal, the sixth interconnecting metal is connected to the second interconnecting metal, the seventh interconnecting metal is connected to the third interconnecting metal, the eighth interconnecting metal is connected to the fifth interconnecting metal, the ninth interconnecting metal is connected to the fourth interconnecting metal, and the tenth interconnecting metal is connected to the sixth interconnecting metal.
[0013] The technical solution of the embodiment of the present utility model has at least the following advantages and beneficial effects:
[0014] The structure provided by the utility model mainly includes a plurality of groups of gate metals, source metals, drain metals, and a first interconnecting metal unit. First vias are provided on the gate metals, source metals, and drain metals. The first interconnecting metal unit is respectively connected to the gate metals, source metals, and drain metals. Second vias are provided on the first interconnecting metal unit. The structure provided by this solution has a built-in current sampling tube, which shares the gate and drain with the power tube. The gate width ratio of the sampling tube to the power tube is equal to the current ratio of the sampling tube to the power tube. By monitoring the current value of the sampling tube, that is, the current value flowing through the seventh interconnecting metal, the current value of the power tube can be calculated. Thus, the real-time current of the power tube can be accurately monitored without introducing a sampling resistor, and the power loss caused by introducing a sampling resistor can be effectively avoided. In addition, the completely same working conditions of the sampling tube and the power tube ensure the sampling accuracy of the sampling tube. Description of the Drawings
[0015] To more clearly illustrate the technical solutions of the embodiments of the present utility model, the accompanying drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present utility model and should not be regarded as limiting the scope. For those of ordinary skill in the art, without creative efforts, other related drawings can also be obtained based on these drawings.
[0016] Figure 1 is a schematic structural diagram of the present utility model;
[0017] Icon: 1 - gate metal, 2 - source metal, 3 - drain metal, 4 - first through - hole, 5 - second through - hole, 6 - first interconnecting metal, 7 - second interconnecting metal, 8 - third interconnecting metal, 9 - fourth interconnecting metal, 10 - fifth interconnecting metal, 11 - sixth interconnecting metal, 12 - seventh interconnecting metal, 13 - eighth interconnecting metal, 14 - ninth interconnecting metal, 15 - tenth interconnecting metal, 16 - active region. Detailed implementation manners
[0018] To make the objectives, technical solutions, and advantages of the embodiments of the present utility model clearer, the technical solutions in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model. Obviously, the described embodiments are some, but not all, of the embodiments of the present utility model. Usually, the components of the embodiments of the present utility model described and shown in the drawings here can be arranged and designed in various different configurations.
[0019] Please refer to Figure 1 , a GaN power device structure with built - in current sampling provided by the present utility model includes several groups of gate metal 1, source metal 2, and drain metal 3.
[0020] Among them, three groups of a total of six gate metals 1 are provided, three source metals 2 are provided, and four drain metals 3 are provided. Each group of gate metals 1 is respectively arranged on both sides of the source metal 2, and each group of gate metals 1 is respectively located between two drain metals 3. First through - holes 4 are provided on the gate metal 1, source metal 2, and drain metal 3.
[0021] It further includes a first interconnecting metal unit, and the first interconnecting metal unit is respectively connected to the gate metal 1, source metal 2, and drain metal 3. Second through - holes 5 are provided on the first interconnecting metal unit.
[0022] It further includes a second interconnecting metal unit, and the second interconnecting metal unit is respectively connected to the first interconnecting metal 6, second interconnecting metal 7, third interconnecting metal 8, and fourth interconnecting metal 9.
[0023] In addition, it further includes an active region 16, with the active region 16 inside and the non-active region 16 outside.
[0024] The structure provided by the utility model mainly includes a plurality of groups of gate metals 1, source metals 2, drain metals 3 and a first interconnecting metal unit. First vias 4 are provided on the gate metals 1, source metals 2 and drain metals 3. The first interconnecting metal unit is respectively connected to the gate metals 1, source metals 2 and drain metals 3, and a second via 5 is provided on the first interconnecting metal unit. The structure provided by this solution has a built-in current sampling tube, which shares the gate and drain with the power tube. The gate width ratio of the sampling tube to the power tube is equal to the current ratio of the sampling tube to the power. By monitoring the current value of the sampling tube, that is, the current value flowing through the seventh interconnecting metal 12, the current value of the power tube can be calculated. Thus, the real-time current of the power tube can be accurately monitored without introducing a sampling resistor, and the power loss caused by introducing a sampling resistor can be effectively avoided. In addition, the completely same working conditions of the sampling tube and the power tube ensure the sampling accuracy of the sampling tube.
[0025] Preferably, the first interconnecting metal unit includes a first interconnecting metal 6, a second interconnecting metal 7, a third interconnecting metal 8 and a fourth interconnecting metal 9. Second vias 5 are provided on the first interconnecting metal 6, second interconnecting metal 7, third interconnecting metal 8 and fourth interconnecting metal 9. The first interconnecting metal 6 is connected to all the source metals 2, the second interconnecting metal 7 is connected to the drain metal 3, the third interconnecting metal 8 is connected to the gate metal 1, and the fourth interconnecting metal 9 is connected to the source metal 2 located in the middle.
[0026] Among them, there are three groups of source metals 2, and the fourth interconnecting metal 9 is connected to the source metal 2 located in the middle.
[0027] Secondly, the third interconnecting metal 8 is used as a signal line or circuit for connecting multiple gates (Gate), that is, the gatebus. The fourth interconnecting metal 9 is used as the source bus of the sampling tube. The power tube is a multi-gate finger device, and its source, gate and drain metals 3 are arranged periodically. The sampling tube shares the gate and drain with the power tube, and the source metal 2 of the sampling tube is realized by intercepting a part of the source metal 2 of the power tube.
[0028] An exemplary embodiment of the utility model further includes a second interconnecting metal unit, and the second interconnecting metal unit is respectively connected to the first interconnecting metal 6, second interconnecting metal 7, third interconnecting metal 8 and fourth interconnecting metal 9.
[0029] Specifically, the second interconnecting metal unit includes a fifth interconnecting metal 10, a sixth interconnecting metal 11, a seventh interconnecting metal 12, an eighth interconnecting metal 13, a ninth interconnecting metal 14 and a tenth interconnecting metal 15;
[0030] The fifth interconnect metal 10 is connected to the first interconnect metal 6, the sixth interconnect metal 11 is connected to the second interconnect metal 7, the seventh interconnect metal 12 is connected to the third interconnect metal 8, the eighth interconnect metal 13 is connected to the fifth interconnect metal 10, the ninth interconnect metal 14 is connected to the fourth interconnect metal 9, and the tenth interconnect metal 15 is connected to the sixth interconnect metal 11.
[0031] The manufacturing method of the present invention includes the following steps:
[0032] Deposit ohmic contact metal on the GaN epitaxy and etch it to form the source metal 2 and the drain metal 3, anneal the ohmic contact metal to form an ohmic contact, grow a layer of insulating dielectric, perform ion implantation isolation on the area outside the active region 16, deposit the gate metal 1 and etch it to form the gate metal 1, grow a layer of insulating dielectric, etch the insulating dielectric to form the first via hole 4, fill the W metal in the first via hole 4, deposit the first interconnect metal unit and etch it to form the first interconnect metal 6, the second interconnect metal 7, the third interconnect metal 8, and the fourth interconnect metal 9, grow a layer of insulating dielectric, etch the insulating dielectric to form the second via hole 5, fill the W metal in the second via hole 5, deposit the second interconnect metal 7 and etch it to form the fifth interconnect metal 10, the sixth interconnect metal 11, the seventh interconnect metal 12, and the eighth interconnect metal 13.
[0033] The above are only the preferred embodiments of the present utility model and are not used to limit the present utility model. For those skilled in the art, various modifications and changes can be made to the present utility model. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present utility model shall be included within the protection scope of the present utility model.
Claims
1. A GaN power device structure with built-in current sampling, characterized in that, It includes several groups of gate metals (1), source metals (2), and drain metals (3). Two gate metals (1) are arranged on both adjacent sides of the source metal (2). The drain metal (3) is arranged on the side of the gate metal (1) away from the source metal (2). First vias (4) are provided on the gate metals (1), source metals (2), and drain metals (3). It further includes a first interconnect metal unit, which is respectively connected to the gate metal (1), source metal (2), and drain metal (3). Second vias (5) are provided on the first interconnect metal unit.
2. The structure of a GaN power device with built-in current sampling according to claim 1, wherein The first interconnect metal unit includes a first interconnect metal (6), a second interconnect metal (7), a third interconnect metal (8), and a fourth interconnect metal (9). Second vias (5) are provided on the first interconnect metal (6), second interconnect metal (7), third interconnect metal (8), and fourth interconnect metal (9). The first interconnect metal (6) is connected to all the source metals (2). The second interconnect metal (7) is connected to the drain metal (3). The third interconnect metal (8) is connected to the gate metal (1). The fourth interconnect metal (9) is connected to the source metal (2) located in the middle.
3. The GaN power device structure with built-in current sampling according to claim 2, wherein There are three groups of source metals (2), and the fourth interconnect metal (9) is connected to the source metal (2) located in the middle.
4. The structure of a GaN power device with built-in current sampling according to claim 3, characterized in that, It further includes a second interconnect metal unit, which is respectively connected to the first interconnect metal (6), second interconnect metal (7), third interconnect metal (8), and fourth interconnect metal (9).
5. The structure of a GaN power device with built-in current sampling according to claim 4, characterized in that, The second interconnect metal unit includes a fifth interconnect metal (10), a sixth interconnect metal (11), a seventh interconnect metal (12), an eighth interconnect metal (13), a ninth interconnect metal (14), and a tenth interconnect metal (15). The fifth interconnect metal (10) is connected to the first interconnect metal (6). The sixth interconnect metal (11) is connected to the second interconnect metal (7). The seventh interconnect metal (12) is connected to the third interconnect metal (8). The eighth interconnect metal (13) is connected to the fifth interconnect metal (10). The ninth interconnect metal (14) is connected to the fourth interconnect metal (9). The tenth interconnect metal (15) is connected to the sixth interconnect metal (11).