IGBT terminal structure and power module
By introducing substrate, field oxygen layer, metal termination structure and circumferential barrier structure into the IGBT module, the problem of water vapor and pollutant erosion is solved, and the stability and life of the IGBT module in high temperature and high humidity environment is improved.
Patent Information
- Application Number
- CN202422238012.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-12
- Publication Date
- 2025-07-08
- Estimated Expiration
- 2034-09-12
AI Technical Summary
The existing IGBT modules are susceptible to erosion of water vapor and pollutants in high temperature and high humidity environments, resulting in leakage failure and short service life.
The IGBT terminal structure is adopted, including a substrate, a field oxygen layer, a metal termination structure, a passivation structure and a circumferential barrier structure. By wrapping the passivation structure on the metal termination structure and setting a circumferential barrier structure on the substrate, water vapor and pollutants are blocked from entering the key area.
Effectively isolate water vapor and pollutants, prevent corrosion of metal structures, and improve the stability and service life of IGBT modules under extreme conditions.
Smart Images
Figure CN223080380U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor technology, and more particularly, to an IGBT terminal structure and a power module. Background Art
[0002] The application environment of existing power IGBT modules is very complex. For example, new energy vehicles, frequency converters, photovoltaic inverters, etc. mostly work outdoors. Therefore, high-temperature and high-humidity environments pose a very severe test for high-voltage and high-current power devices such as IGBTs. Stable operation at temperatures above 85°C and relative humidity of 85% has also become an essential quality for the new generation of IGBT power devices. Existing IGBT modules are not hermetically designed, and semiconductor chips and bonding wires are embedded in moisture-absorbing silicone gel. Over time, moisture can penetrate through the module housing, penetrate the silicone gel, and ultimately damage the weak points in the chip edge seal. In addition, contaminants such as ions can also reach the critical high-electric-field areas inside the chip through moisture transport, leading to failure problems such as leakage, resulting in a short service life of the used devices. Summary of the Utility Model
[0003] The purpose of this application is to provide an IGBT terminal structure and a power module, which can effectively block water vapor and improve the stability and service life of IGBTs under extreme conditions.
[0004] The embodiments of this application are implemented as follows:
[0005] In a first aspect, an embodiment of this application provides an IGBT terminal structure, including a substrate and a field oxide layer disposed on the substrate; a metal termination structure is disposed on the field oxide layer, and the metal termination structure is arranged around the periphery of the field oxide layer; a passivation structure is wrapped on the metal termination structure, and the passivation structure is used to block the surface of the metal termination structure facing away from the substrate from contacting with water vapor; a circumferential blocking structure is disposed on the substrate, and the circumferential blocking structure is disposed around the outside of the metal termination structure to block the water vapor entering from the contact surface gap between the field oxide layer and the passivation structure from contacting with the metal termination structure.
[0006] As an optional implementation, the passivation structure includes an organic passivation layer and an inorganic passivation layer; the inorganic passivation layer is wrapped on the metal termination structure, and the organic passivation layer is wrapped on the inorganic passivation layer.
[0007] As an optional implementation, a P-type ion implantation region is formed on the substrate; a through hole is opened in the field oxide layer at a position corresponding to the P-type ion implantation region to allow water vapor to enter the upper surface of the P-type ion implantation region through the through hole.
[0008] As an alternative embodiment, the circumferential blocking structure includes a blocking protrusion disposed on the inorganic passivation layer; the blocking protrusion penetrates through the through hole and approaches the side of the P-type ion implantation region, and a preset gap is provided between the surface of the blocking protrusion close to the P-type ion implantation region and the P-type ion implantation region, so that a water vapor accommodation cavity is formed between the interface of the P-type ion implantation region and the inorganic passivation layer.
[0009] As an alternative embodiment, the P-type ion implantation region is arranged around the outer periphery of the metal termination structure; a plurality of the through holes are distributed at intervals along the arrangement path of the P-type ion implantation region.
[0010] As an alternative embodiment, there are at least two circles of P-type ion implantation regions arranged at intervals around the outer periphery of the metal termination structure.
[0011] As an alternative embodiment, the circumferential blocking structure includes an ion interception trench arranged on the substrate and around the outer periphery of the metal termination structure.
[0012] As an alternative embodiment, there are at least two circles of the ion interception trenches arranged at intervals around the outer periphery of the metal termination structure.
[0013] As an alternative embodiment, the metal termination structure includes a field limiting metal ring and a cut-off metal ring, and the cut-off metal ring is arranged outside the field limiting metal ring.
[0014] In a second aspect, an embodiment of the present application provides a power module, including a module housing, an IGBT terminal structure disposed in the module housing, and a heat dissipation component.
[0015] The beneficial effects of the embodiments of the present application include:
[0016] The IGBT terminal structure provided by the embodiment of the present application includes a substrate and a field oxide layer laid on the substrate; a metal termination structure is arranged on the field oxide layer, and the metal termination structure of the embodiment of the present application is arranged around the periphery of the field oxide layer. In the embodiment of the present application, a passivation structure is wrapped on the metal termination structure, and the passivation structure can effectively block the contact between the surface of the metal termination structure facing away from the substrate and water vapor, so as to form a water vapor isolation protection layer for the metal termination structure above the substrate. A circumferential blocking structure is arranged on the substrate of the embodiment of the present application, and the circumferential blocking structure is arranged along the outer side of the metal termination structure. In the embodiment of the present application, the circumferential blocking structure can effectively block the water vapor entering from the gap between the contact surfaces of the field oxide layer and the passivation structure from contacting the metal termination structure. Compared with the prior art, the embodiment of the present application can not only wrap the outer surface of the metal termination structure with a passivation structure to isolate the front water vapor, but also effectively intercept the water vapor permeating from the gap between the contact surfaces of the passivation structure and the field oxide layer, so as to realize the effective isolation of water vapor. Therefore, the embodiment of the present application can prevent the corrosion of metal structures and other structures by water vapor under high electric fields, effectively solve the problem of leakage failure, and improve the stability and service life of IGBTs under extreme conditions.
[0017] The embodiment of the present application provides a power module, including a module housing, an IGBT terminal structure and a heat dissipation component arranged in the module housing. The power module provided by the embodiment of the present application adopts the above IGBT terminal structure, which enables the power module provided by the embodiment of the present application to effectively block water vapor from entering the key areas inside the module, effectively prevent the damage of water vapor to the inside of the chip, avoid the occurrence of high-voltage leakage current faults, and ensure that the power module can work stably and reliably in high-voltage and high-humidity environments, greatly improving the service life of the power module. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings required to be used in the embodiments. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as limiting the scope. For those of ordinary skill in the art, other related drawings can be obtained based on these drawings without creative efforts.
[0019] Figure 1 It is one of the structural schematic diagrams of the IGBT terminal structure of the embodiment of the present application;
[0020] Figure 2 It is the second structural schematic diagram of the IGBT terminal structure of the embodiment of the present application.
[0021] ICON:
[0022] 100 - Substrate; 101 - Field oxide layer; 102 - Metal termination structure; 103 - Passivation structure; 104 - Circumferential barrier structure; 105 - P-type ion implantation region; 106 - Through hole; 107 - Organic passivation layer; 108 - Inorganic passivation layer; 109 - Barrier protrusion; 110 - Field limiting metal ring; 111 - Cut-off metal ring; 112 - Interface; 113 - Ion interception trench. Detailed implementation manners
[0023] To make the objectives, technical solutions, and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are some, but not all, of the embodiments of the present application. Components of the embodiments of the present application generally described and illustrated in the drawings herein may be arranged and designed in a variety of different configurations.
[0024] Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the present application claimed, but merely represents selected embodiments of the present application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present application without creative efforts fall within the scope of protection of the present application.
[0025] It should be noted that: Similar reference numerals and letters denote similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings. In addition, the terms "first", "second", "third", etc. are only used for descriptive distinction and cannot be construed as indicating or implying relative importance.
[0026] In the description of the present application, it should also be noted that, unless otherwise clearly defined and limited, the terms "set", "installed", "connected", and "connected" should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral connection; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the communication inside two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific situations.
[0027] The application environment of existing power IGBT modules is very complex. For example, new energy vehicles, frequency converters, photovoltaic inverters, etc. mostly operate outdoors. Therefore, high-temperature and high-humidity environments pose a very severe test for high-voltage and high-current power devices such as IGBTs. Stable operation at temperatures exceeding 85°C and relative humidity of 85% has also become an essential quality for the new generation of IGBT power devices. Existing IGBT modules are not hermetically designed, and semiconductor chips and bonding wires are embedded in moisture-absorbing silicone gel. Over time, moisture can penetrate through the module housing and the silicone gel, eventually damaging the weak points in the chip edge seal. In addition, contaminants such as ions can also reach the critical high-electric-field areas inside the chip through moisture transport, leading to failure problems such as leakage, resulting in a short service life of the devices used.
[0028] To solve the above technical problems, the embodiments of the present application provide an IGBT terminal structure and a power module.
[0029] In the first aspect, as shown in Figure 1 and Figure 2 , the embodiments of the present application provide an IGBT terminal structure, including a substrate 100 and a field oxide layer 101 disposed on the substrate 100; a metal termination structure 102 is disposed on the field oxide layer 101, and the metal termination structure 102 is arranged around the periphery of the field oxide layer 101; a passivation structure 103 is wrapped on the metal termination structure 102, and the passivation structure 103 is used to prevent the surface of the metal termination structure 102 facing away from the substrate 100 from contacting with water vapor; a circumferential blocking structure 104 is disposed on the substrate 100, and the circumferential blocking structure 104 is arranged along the outside of the metal termination structure 102 to block the water vapor entering from the gap between the contact surfaces of the field oxide layer 101 and the passivation structure 103 from contacting the metal termination structure 102.
[0030] As shown in Figure 1 , the passivation structure 103 and the circumferential blocking structure 104 provided by the embodiments of the present application have simple process requirements and are easy to implement, with strong practicability. It can improve the reliability of the module structure and enhance the working robustness of the IGBT module.
[0031] It should be noted that the metal termination structure 102 provided by the embodiments of the present application is arranged around the outer periphery of the field oxide layer 101. The explanation of the outer periphery is the edge far from the geometric center of the field oxide layer 101.
[0032] Among them, the field oxide layer 101 is a silicon oxide layer grown on the substrate 100. The field oxide layer 101 can effectively control the distribution of the electric field, avoid excessive concentration of the electric field, and thus improve the breakdown voltage of the IGBT. By designing a specific field oxide layer 101 structure in the terminal area, it is possible to ensure uniform distribution of the electric field and prevent breakdown caused by too strong local electric field.
[0033] Among them, the substrate 100 can be a silicon substrate.
[0034] The IGBT terminal structure provided by the embodiment of the present application includes a substrate 100 and a field oxide layer 101 disposed on the substrate 100; a metal termination structure 102 is disposed on the field oxide layer 101, and the metal termination structure 102 of the embodiment of the present application is arranged around the periphery of the field oxide layer 101.
[0035] In the embodiment of the present application, a passivation structure 103 is wrapped on the metal termination structure 102, and the passivation structure 103 can effectively block the contact between the surface of the metal termination structure 102 facing away from the substrate 100 and water vapor, thereby forming a water vapor isolation protection layer for the metal termination structure 102 above the substrate 100.
[0036] A circumferential blocking structure 104 is disposed on the substrate 100 of the embodiment of the present application, and the circumferential blocking structure 104 is arranged along the outside of the metal termination structure 102. In the embodiment of the present application, the circumferential blocking structure 104 can effectively block the contact between the water vapor entering from the gap between the contact surfaces of the field oxide layer 101 and the passivation structure 103 and the metal termination structure 102.
[0037] Compared with the prior art, the embodiment of the present application can not only wrap the outer surface of the metal termination structure 102 with the passivation structure 103 to isolate the front water vapor, but also effectively intercept the water vapor penetrating from the gap between the contact surfaces of the passivation structure 103 and the field oxide layer 101, realizing effective isolation of water vapor. Therefore, the embodiment of the present application can prevent the corrosion of the metal structure and other structures by water vapor under high electric fields, effectively solve the problem of leakage failure, and improve the stability and service life of the IGBT under extreme conditions.
[0038] Refer to Figure 2 As shown, as an optional implementation manner, the passivation structure 103 includes an organic passivation layer 107 and an inorganic passivation layer 108; the inorganic passivation layer 108 is wrapped on the metal termination structure 102, and the organic passivation layer 107 is wrapped on the inorganic passivation layer 108.
[0039] It should be noted that the organic passivation layer 107 is a protective layer made of organic materials and is used to cover the device surface to enhance its stability and reliability. The organic passivation layer 107 is composed of polymer materials, and this material has good insulation performance, chemical stability and mechanical strength.
[0040] The organic passivation layer 107 has the following functions. First, the organic passivation layer 107 can prevent the device surface from being damaged by environmental factors such as moisture, oxygen, and corrosive gases, reduce oxidation and corrosion, and extend the device life.
[0041] Second, organic materials usually have good flexibility, can relieve the mechanical stress caused by thermal expansion and contraction, and reduce the device damage caused by stress.
[0042] Thirdly, the organic passivation layer 107 provides additional electrical insulation properties, which helps prevent short circuits and electric field leakage, especially in the terminal region of the IGBT, controls the electric field distribution, and increases the breakdown voltage.
[0043] Fourthly, the organic passivation layer 107 has good compatibility with the encapsulation material, which helps improve the encapsulation tightness and the overall reliability of the device.
[0044] Regarding the specific material of the organic passivation layer 107, those skilled in the art can select according to needs, and no special limitation is made thereto.
[0045] Exemplarily, epoxy resin, polyimide or acrylate polymer can be used.
[0046] It should be noted that the inorganic passivation layer 108 is a key material layer for protecting the device surface, controlling the electric field distribution and improving the device reliability. The inorganic passivation layer 108 is usually composed of inorganic materials such as silicon dioxide, silicon nitride, etc., and these inorganic materials have good dielectric properties and chemical stability.
[0047] It has the following functions and effects:
[0048] Firstly, the inorganic passivation layer 108 can protect the surface of the IGBT from chemical corrosion, physical damage and contamination. Especially in high humidity or corrosive environments, the passivation layer can prevent moisture and harmful gases from eroding the device surface, thereby improving the long-term stability of the device.
[0049] Secondly, in the terminal structure of the IGBT, the passivation layer can assist in controlling the electric field distribution, reduce the edge effect, and prevent breakdown caused by overly concentrated electric fields. By optimizing the thickness and material of the passivation layer, the breakdown voltage resistance and switching characteristics of the IGBT can be improved.
[0050] Thirdly, the inorganic passivation layer 108 can also prevent the diffusion of metal from the electrode or interconnect structure into the semiconductor material, avoiding the adverse effects of metal ions on the semiconductor properties.
[0051] Fourthly, the inorganic passivation layer 108 provides additional mechanical support for the surface of the IGBT, which helps improve the physical strength of the device during encapsulation and use.
[0052] Refer to Figure 2 As shown, a P-type ion implantation region 105 is formed on the substrate 100; the field oxide layer 101 is provided with a through hole 106 at a position corresponding to the P-type ion implantation region 105, so that water vapor can enter the upper surface of the P-type ion implantation region 105 through the through hole 106.
[0053] The circumferential blocking structure 104 includes a blocking protrusion 109 provided on the inorganic passivation layer 108; the blocking protrusion 109 penetrates through the through hole 106 and approaches the P-type ion implantation region 105 side, and a preset gap is provided between the surface of the blocking protrusion 109 close to the P-type ion implantation region 105 and the P-type ion implantation region 105, so that a water vapor accommodation cavity is formed between the interface 112 of the P-type ion implantation region 105 and the inorganic passivation layer 108.
[0054] When water vapor seeps into the P-type ion implantation region 105 from the edge gap of the contact surface between the passivation structure 103 and the field oxide layer 101, due to the setting of the through hole 106, the water vapor enters the water vapor accommodation cavity and cannot continue to approach the metal termination structure 102 deeper inside the terminal structure. Therefore, effective interception can be achieved at the contact surface gap between the two structures.
[0055] It should be noted that in the embodiment of the present application, the inorganic passivation layer 108 forms the blocking protrusion 109, and the blocking protrusion 109 is inserted into the P-type ion implantation region 105 along the direction perpendicular to the substrate 100, which can block and divert the water vapor in the movement direction of the water vapor, ensuring that the water vapor effectively enters the water vapor accommodation cavity for storage.
[0056] It should be noted that the stored water vapor will gradually dissipate under anhydrous vapor or high temperature conditions, so that the water vapor accommodation cavity can continuously maintain the interception function.
[0057] As an alternative embodiment, the P-type ion implantation region 105 is arranged around the outer periphery of the metal termination structure 102; a plurality of through holes 106 are distributed at intervals along the arrangement path of the P-type ion implantation region 105.
[0058] Further, in the embodiment of the present application, the through holes 106 are opened at intervals on the arrangement path of the P-type ion implantation region 105. Since the P-type ion implantation region 105 is arranged around the outer circle of the metal termination structure 102, the through holes 106 opened at intervals are also arranged around the outer circle of the metal termination structure 102. Ensure that water vapor in all directions can enter the water vapor accommodation cavity through the through holes 106 on the field oxide layer 101.
[0059] It should be noted that the water vapor accommodation cavity can be continuously arranged, and the through holes 106 can be continuously arranged or arranged at intervals as described above. Forming a continuous annular water vapor accommodation cavity can ensure that the lateral water vapor enters the water vapor accommodation cavity, realizing effective lateral isolation of the water vapor.
[0060] Refer to Figure 2 As shown, as an alternative embodiment, there are a plurality of P-type ion implantation regions 105 arranged at intervals around the outer periphery of the metal termination structure 102; there are a plurality of through holes 106, and they are arranged in one-to-one correspondence with the P-type ion implantation regions 105.
[0061] Referring to Figure 1 as shown, as an alternative embodiment, there are at least two circles of P-type ion implantation regions 105 arranged around the outer periphery of the metal termination structure 102.
[0062] Referring to Figure 2 as shown, the circumferential blocking structure 104 includes ion interception trenches 113 arranged on the substrate 100 and around the outer periphery of the metal termination structure 102.
[0063] It should be noted that the depth direction of the ion interception trench 113 intersects with the plane where the substrate 100 is located.
[0064] Exemplarily, the depth direction of the ion interception trench 113 intersects perpendicularly with the plane where the substrate 100 is located.
[0065] Furthermore, the ion interception trench 113 forms a trench on the substrate 100, and the inner wall of the trench is covered with a silicon dioxide layer, and a polysilicon structure is filled in the trench. That is to say, the ion interception trench 113 in the embodiment of the present application refers to a trench structure filled with polysilicon and covered with a silicon dioxide layer on the polysilicon. Through the above settings, the embodiment of the present application can effectively intercept ion diffusion and prevent ions from entering the inside of the terminal structure laterally.
[0066] Furthermore, there are at least two circles of ion interception trenches 113 arranged at intervals around the outer periphery of the metal termination structure 102.
[0067] Referring to Figure 2 as shown, there are two circles of ion interception trenches 113 arranged at intervals around the outer periphery of the metal termination structure 102. And the P-type ion implantation region 105 and the through hole 106 are arranged between the two ion interception trenches 113.
[0068] Among them, the metal termination structure 102 includes a field limiting metal ring 110 and a cutoff metal ring 111, and the cutoff metal ring 111 is arranged outside the field limiting metal ring 110.
[0069] It should be noted that the field limiting metal ring 110 is arranged around the edge of the IGBT active region, which can control the electric field distribution, change the path and intensity of the electric field, and prevent the electric field from being too concentrated at the IGBT edge, thereby avoiding local breakdown. It should be noted that the electrical performance deterioration caused by the uneven distribution of the electric field in the edge region of the IGBT device. The field limiting metal ring 110 can significantly reduce this edge effect by optimizing the electric field distribution.
[0070] It should be noted that the cutoff metal ring 111 is located on the outer circle of the field limiting metal ring 110. The function of the cutoff metal ring 111 is to terminate the electric field lines at the outer edge of the IGBT, prevent the electric field lines from extending to the outside of the device, and thus avoid edge discharge. In addition, the cutoff metal ring 111 can collect and redistribute the charges in the edge region, which helps to further control the electric field distribution and improve the breakdown voltage ability of the device.
[0071] In a second aspect, an embodiment of the present application provides a power module, including a module housing, an IGBT terminal structure disposed in the module housing, and a heat dissipation component.
[0072] The power module provided by the embodiment of the present application adopts the above IGBT terminal structure, which enables the power module provided by the embodiment of the present application to effectively block the key area entering the module, effectively prevent the damage of water vapor to the inside of the chip, avoid the occurrence of high-voltage leakage current faults, ensure that the power module can work stably and reliably in a high-voltage and high-humidity environment, and greatly improve the service life of the power module.
[0073] The foregoing is only a preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims
1. An IGBT terminal structure, characterized in that, It includes a substrate (100) and a field oxide layer (101) laid on the substrate (100); a metal termination structure (102) is provided on the field oxide layer (101), and the metal termination structure (102) is arranged around the periphery of the field oxide layer (101); a passivation structure (103) is wrapped on the metal termination structure (102), and the passivation structure (103) is used to prevent the surface of the metal termination structure (102) facing away from the substrate (100) from contacting with water vapor; a circumferential blocking structure (104) is provided on the substrate (100), and the circumferential blocking structure (104) is arranged along the outside of the metal termination structure (102) to prevent the water vapor entering from the contact surface gap between the field oxide layer (101) and the passivation structure (103) from contacting the metal termination structure (102).
2. The IGBT terminal structure according to claim 1, characterized in that, The passivation structure (103) includes an organic passivation layer (107) and an inorganic passivation layer (108); the inorganic passivation layer (108) is wrapped on the metal termination structure (102), and the organic passivation layer (107) is wrapped on the inorganic passivation layer (108).
3. The IGBT terminal structure according to claim 2, characterized in that, A P-type ion implantation region (105) is formed on the substrate (100); a through hole (106) is opened in the field oxide layer (101) at a position corresponding to the P-type ion implantation region (105) so that water vapor can enter the upper surface of the P-type ion implantation region (105) through the through hole (106).
4. The IGBT terminal structure according to claim 3, wherein The circumferential blocking structure (104) includes a blocking protrusion (109) provided on the inorganic passivation layer (108); the blocking protrusion (109) penetrates through the through hole (106) and approaches the P-type ion implantation region (105) side, and a preset gap is provided between the surface of the blocking protrusion (109) close to the P-type ion implantation region (105) and the P-type ion implantation region (105), so that a water vapor accommodation cavity is formed between the interface (112) of the P-type ion implantation region (105) and the inorganic passivation layer (108).
5. The IGBT terminal structure according to claim 4, wherein The P-type ion implantation region (105) is arranged around the outer periphery of the metal termination structure (102); a plurality of the through holes (106) are distributed at intervals along the arrangement path of the P-type ion implantation region (105).
6. The IGBT terminal structure according to claim 4, characterized in that, There are at least two circles of P-type ion implantation regions (105) arranged at intervals around the outer periphery of the metal termination structure (102).
7. The IGBT terminal structure according to any one of claims 1-6, characterized in that, The circumferential blocking structure (104) includes ion interception grooves (113) arranged on the substrate (100) and around the outer periphery of the metal termination structure (102).
8. The IGBT terminal structure according to claim 7, wherein There are at least two circles of the ion interception grooves (113) arranged at intervals around the outer periphery of the metal termination structure (102).
9. The IGBT terminal structure according to any one of claims 1-6, characterized in that, The metal termination structure (102) includes a field limiting metal ring (110) and a cut-off metal ring (111), and the cut-off metal ring (111) is arranged outside the field limiting metal ring (110).
10. A power module, characterized in that, It includes a module housing, an IGBT terminal structure as described in any one of claims 1-9 provided in the module housing, and a heat dissipation component.